CN108122968A - 增强型高电子迁移率晶体管元件 - Google Patents

增强型高电子迁移率晶体管元件 Download PDF

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CN108122968A
CN108122968A CN201710805303.4A CN201710805303A CN108122968A CN 108122968 A CN108122968 A CN 108122968A CN 201710805303 A CN201710805303 A CN 201710805303A CN 108122968 A CN108122968 A CN 108122968A
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field plate
pattern
nitride field
electron mobility
high electron
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CN108122968B (zh
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韦维克
陈柏安
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Nuvoton Technology Corp
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Abstract

本发明提供一种增强型高电子迁移率晶体管元件，其包括基板、通道层、阻障层、氮化物场板、P型半导体层、栅极、源极与漏极。通道层配置于基板上。阻障层配置于通道层上。氮化物场板配置于阻障层上且包括一主图案以及位于主图案侧边的多个次图案。P型半导体层配置于氮化物场板的主图案上。栅极配置于P型半导体层上。源极与漏极配置于栅极两侧的阻障层上。

Description

增强型高电子迁移率晶体管元件
技术领域
本发明是有关于一种半导体元件，且特别是有关于一种增强型(enhancementmode)高电子迁移率晶体管(high electron mobility transistor；HEMT)元件。
背景技术
近年来，以III-V族化合物半导体为基础的HEMT元件因为其低阻值、高击穿电压以及快速开关切换频率等特性，在高功率电子元件领域被广泛地应用。
一般来说，HEMT元件可分为消耗型或常开型晶体管元件，以及增强型或常关型晶体管元件。增强型晶体管元件因为其提供的附加安全性以及其更易于由简单、低成本的驱动电路来控制，因而在业界获得相当大的关注。
发明内容
有鉴于此，本发明提供一种增强型HEMT元件，藉由配置氮化物场板于P型半导体层与阻障层之间，可有效分散电场，提升元件的可靠度。
本发明提供一种增强型HEMT元件，其包括基板、通道层、阻障层、氮化物场板、P型半导体层、栅极、源极与漏极。通道层配置于基板上。阻障层配置于通道层上。氮化物场板配置于阻障层上且包括一主图案以及位于主图案侧边的多个次图案。P型半导体层配置于氮化物场板的主图案上。栅极配置于P型半导体层上。源极与漏极配置于栅极两侧的阻障层上。
在本发明的一实施例中，上述氮化物场板的次图案位于栅极与漏极之间的阻障层上。
在本发明的一实施例中，上述氮化物场板的次图案的宽度实质上相等。
在本发明的一实施例中，上述氮化物场板的次图案的宽度随着接近漏极而逐渐减少。
在本发明的一实施例中，上述氮化物场板的主图案的宽度大于次图案中至少一者的宽度。
在本发明的一实施例中，上述氮化物场板的次图案的厚度实质上相等。
在本发明的一实施例中，上述氮化物场板的次图案的厚度随着接近漏极而逐渐减少。
在本发明的一实施例中，上述氮化物场板的主图案的厚度大于或等于次图案中至少一者的厚度。
在本发明的一实施例中，上述氮化物场板的次图案的掺杂浓度实质上相等。
在本发明的一实施例中，上述氮化物场板的次图案的掺杂浓度随着接近漏极而逐渐减少。
在本发明的一实施例中，上述氮化物场板的主图案的掺杂浓度大于或等于次图案中至少一者的掺杂浓度。
在本发明的一实施例中，上述氮化物场板的平均掺杂浓度低于P型半导体层的平均掺杂浓度。
在本发明的一实施例中，上述氮化物场板的次图案之间的间隙实质上相等。
在本发明的一实施例中，上述氮化物场板的次图案之间的间隙随着接近漏极而逐渐减少。
在本发明的一实施例中，上述氮化物场板的主图案的一边界突出于P型半导体层的一边界，且氮化物场板的主图案的另一边界对齐于P型半导体层的另一边界。
在本发明的一实施例中，上述阻障层与氮化物场板的组成实质上相同。
在本发明的一实施例中，上述阻障层未经掺杂，而氮化物场板掺杂有P型掺质。
在本发明的一实施例中，上述氮化物场板的厚度介于约20埃至400埃之间。
在本发明的一实施例中，上述氮化物场板的掺杂浓度为约1015至1018原子/cm3。
在本发明的一实施例中，上述氮化物场板的材料包括AlGaN、AlInN、AlN或AlGaInN或其组合。
基于上述，将本发明的氮化物场板引入增强型HEMT元件中，可有效分散电场，提升元件的可靠度。更具体地说，本发明的氮化物场板具有凸出于P型半导体层的主图案以及位于栅极与漏极之间的多个次图案。主图案有助于降低栅极转角处的电场。次图案用以形成二维电子气密度较低的区域。以此配置方式，能有效分散电场、提高击穿电压并减少漏电流。
附图说明
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合所附图式作详细说明如下。
图1至图8是依照本发明一些实施例所绘示的多种增强型HEMT元件的剖面示意图。
符号说明：
10、20、30、40、50、60、70、80：增强型HEMT元件
100：基板
102：缓冲层
104：通道层
106：阻障层
107：主图案
108：氮化物场板
109a、109b、109c、109d：次图案
110：P型半导体层
D：漏极
G：栅极
S：源极
具体实施方式
图1至图8是依照本发明一些实施例所绘示的多种增强型HEMT元件的剖面示意图。图1至图8的增强型HEMT元件类似，其差别在于氮化物场板的图案分布、厚度、掺杂浓度等参数不尽相同。将详细说明如下。
请参照图1至图8，本发明的增强型HEMT元件包括基板100、缓冲层102、通道层104、阻障层106、P型半导体层110、栅极G、源极S与漏极D。
通道层104形成在基板100上。在一实施例中，基板100的材料包括蓝宝石、Si、SiC或GaN。在一实施例中，通道层104的材料包括III族氮化物，例如III-V族化合物半导体材料。在一实施例中，通道层104的材料包括GaN。此外，通道层104可以是经掺杂或未经掺杂的层。
缓冲层102可配置于基板100和通道层104之间，用以减少基板100和通道层104之间的晶格常数差异和热膨胀系数差异。在一实施例中，缓冲层102的材料包括III族氮化物，例如III-V族化合物半导体材料，并可具有单层或多层结构。在一实施例中，缓冲层的材料包括AlN、GaN、AlGaN、InGaN、AlInN、AlGaInN或其组合。
阻障层106配置于通道层104上。在一实施例中，阻障层106的材料包括III族氮化物，例如III-V族化合物半导体材料，并可具有单层或多层结构。在一实施例中，阻障层106包括AlGaN、AlInN、AlN或AlGaInN或其组合。在一实施例中，阻障层106可以是经掺杂或未经掺杂的层。
栅极G配置在阻障层106上。栅极G的材料包括金属或金属氮化物(例如Ta、TaN、Ti、TiN、W、Pd、Ni、Au、Al或其组合)、金属硅化物(例如WSix)或其他可与III-V族化合物半导体形成肖特基接触(Schottky contact)的材料。
源极S与漏极D配置在栅极G两侧的阻障层106上，如图1至图8所示。然而，本发明并不以此为限。在另一实施例中，源极S及/或漏极D中至少一者可延伸至通道层104中并电连接至二维电子气(2DEG)。源极S与漏极D的材料包括金属(例如Al、Ti、Ni、Au或其合金)，或其他可与III-V族化合物半导体形成欧姆接触(ohmic contact)的材料。
P型半导体层110配置于阻障层106与栅极G之间，用以形成二维电子气的断开区或者具有相对低的电子密度的区域。在一实施例中，P型半导体层110的材料包括III族氮化物，例如III-V族化合物半导体材料。在一实施例中，P型半导体层110的材料包括GaN、AlGaN、InN、AlInN、InGaN或AlInGaN，并掺杂有P型掺质(例如Mg)。在一实施例中，P型半导体层110可为P型GaN层或P型AlxGa1-xN层，其中x为0～1，例如0.05～1。在一实施例中，P型半导体层110的厚度介于约100埃至3,000埃之间，且其掺杂浓度为约1018至1021原子/cm3。
特别要注意的是，本发明的增强型HEMT元件还包括氮化物场板108，用以降低栅极转角处的高电场，以避免漏电流并提升元件的可靠度。在一实施例中，氮化物场板108配置于阻障层106上且包括一个主图案107以及位于主图案侧边的多个次图案109a～109d。在一实施例中，P型半导体层110配置于氮化物场板108的主图案107上。更具体地说，氮化物场板108的主图案107的一边界突出于P型半导体层110的一边界，而氮化物场板108的主图案107的另一边界对齐于P型半导体层110的另一边界。
此外，氮化物场板108的次图案109a～109d位于栅极G与漏极D之间的阻障层106上，以进一步均匀分散栅极与漏极之间的高电场聚集效应。
在一实施例中，氮化物场板108的材料包括III族氮化物，例如III-V族化合物半导体材料。在一实施例中，氮化物场板108的材料包括AlGaN、AlInN、AlN或AlGaInN或其组合，并掺杂有P型掺质(例如Mg)。在一实施例中，阻障层106与氮化物场板108的组成实质上相同。在一实施例中，阻障层106与氮化物场板108的组成元素大致上相同，仅掺杂浓度不同。在一实施例中，阻障层106与氮化物场板108的材料相同，阻障层106为未经掺杂，而氮化物场板108掺杂有P型掺质。
在一实施例中，阻障层106与氮化物场板108的材料均包括AlyGa1-yN，其中y为0～1，例如0.1～1。在另一实施例中，阻障层106的材料包括AlyGa1-yN，氮化物场板108的材料包括AlzGa1-zN，其中y、z均为0～1，且y不等于z。在一实施例中，y大于z。在另一实施例中，y小于z。
在一实施例中，氮化物场板108的厚度约20埃至400埃之间，且其掺杂浓度为约1015至1018原子/cm3。在一实施例中，氮化物场板108的平均掺杂浓度低于P型半导体层110的平均掺杂浓度。
在一实施例中，氮化物场板108的次图案109a～109d的宽度实质上相等，如图1的增强型HEMT元件10所示。在另一实施例中，氮化物场板108的次图案109a～109d的宽度随着接近漏极D而逐渐减少，如图2的增强型HEMT元件20所示。更具体地说，如图2所示，次图案109a的宽度大于次图案109b的宽度，次图案109b的宽度大于次图案109c的宽度，且次图案109c的宽度大于次图案109d的宽度。此外，氮化物场板108的主图案107的宽度大于次图案109a～109d中至少一者的宽度。
在一实施例中，氮化物场板108的次图案109a～109d的厚度实质上相等，如图1的增强型HEMT元件10、图2的增强型HEMT元件20所示。在另一实施例中，氮化物场板108的次图案109a～109d的厚度随着接近漏极D而逐渐减少，如图3的增强型HEMT元件30、图4的增强型HEMT元件40所示。更具体地说，如图3及图4所示，次图案109a的厚度大于次图案109b的厚度，次图案109b的厚度大于次图案109c的厚度，且次图案109c的厚度大于次图案109d的厚度。此外，氮化物场板108的主图案107的厚度大于或等于次图案109a～109d中至少一者的厚度。
在一实施例中，氮化物场板108的次图案109a～109d之间的间隙实质上相等，如图1的增强型HEMT元件10、图2的增强型HEMT元件20、图3的增强型HEMT元件30、图4的增强型HEMT元件40所示。在另一实施例中，氮化物场板108的次图案109a～109d之间的间隙随着接近漏极D而逐渐减少，如图5的增强型HEMT元件50、图6的增强型HEMT元件60、图7的增强型HEMT元件70、图8的增强型HEMT元件80所示。更具体地说，如图5至图8所示，次图案109a与次图案109b之间的间隙大于次图案109b与次图案109c之间的间隙，且次图案109b与次图案109c之间的间隙大于次图案109c与次图案109d之间的间隙。此外，主图案107与次图案109a之间的间隙大于或等于次图案109a～109d之间的间隙中的至少一者。
在一实施例中，氮化物场板108的次图案109a～109d的掺杂浓度可实质上相等。在另一实施例中，氮化物场板108的次图案109a～109d的掺杂浓度随着接近漏极D而逐渐减少。以上两种掺杂浓度的态样适用于图1至图8的增强型HEMT元件10～80中。此外，氮化物场板108的主图案107的掺杂浓度大于或等于次图案109a～109d中至少一者的掺杂浓度。
在上述实施例中，是以氮化物场板具有一个主图案与四个次图案为例来说明之，但并不用以限定本发明。在另一实施例中，本发明的氮化物场板可具有一个、两个、三个或大于四个次图案。另外，本发明的氮化物场板的次图案的图案分布、厚度、掺杂浓度不以上述实施例为限，可依制造工艺需要调整，只要能达到有效分散电场，提升元件的可靠度即可。
综上所述，在本发明实施例中，以栅极下方的P型半导体层来空乏阻障层中所形成的二维电子气，以形成增强型或常关型HEMT元件。此外，藉由配置本发明的氮化物场板于P型半导体层与阻障层之间，可有效分散电场，提升元件的可靠度。更具体地说，本发明的氮化物场板具有凸出于P型半导体层的主图案以及位于栅极与漏极之间的多个次图案。主图案有助于降低栅极转角处的电场。次图案用以形成二维电子气密度较低的区域。以此配置方式，能有效分散电场、提高击穿电压并减少漏电流。
虽然本发明已以实施例揭露如上，然其并非用以限定本发明，任何本领域技术人员，在不脱离本发明的精神和范围内，当可作些许的更动与润饰，故本发明的保护范围当视所附的权利要求所界定者为准。

Claims (10)

1.一种增强型高电子迁移率晶体管元件，其特征在于，包括：
一通道层，配置于一基板上；
一阻障层，配置于所述通道层上；
一氮化物场板，配置于所述阻障层上且包括一主图案以及位于所述主图案侧边的多个次图案；
一P型半导体层，配置于所述氮化物场板的所述主图案上；
一栅极，配置于所述P型半导体层上；以及
一源极与一漏极，配置于所述栅极两侧的所述阻障层上。
2.如权利要求1所述的增强型高电子迁移率晶体管元件，其特征在于，所述氮化物场板的所述次图案位于所述栅极与所述漏极之间的所述阻障层上。
3.如权利要求1所述的增强型高电子迁移率晶体管元件，其特征在于，所述氮化物场板的所述次图案的宽度实质上相等。
4.如权利要求1所述的增强型高电子迁移率晶体管元件，其特征在于，所述氮化物场板的所述次图案的宽度随着接近所述漏极而逐渐减少。
5.如权利要求1所述的增强型高电子迁移率晶体管元件，其特征在于，所述氮化物场板的所述主图案的宽度大于所述次图案中至少一者的宽度。
6.如权利要求1所述的增强型高电子迁移率晶体管元件，其特征在于，所述氮化物场板的所述次图案的厚度实质上相等。
7.如权利要求1所述的增强型高电子迁移率晶体管元件，其特征在于，所述氮化物场板的所述次图案的厚度随着接近所述漏极而逐渐减少。
8.如权利要求1所述的增强型高电子迁移率晶体管元件，其特征在于，所述氮化物场板的所述主图案的厚度大于或等于所述次图案中至少一者的厚度。
9.如权利要求1所述的增强型高电子迁移率晶体管元件，其特征在于，所述氮化物场板的平均掺杂浓度低于所述P型半导体层的平均掺杂浓度。
10.如权利要求1所述的增强型高电子迁移率晶体管元件，其特征在于，所述氮化物场板的所述主图案的一边界突出于所述P型半导体层的一边界，且所述氮化物场板的所述主图案的另一边界对齐于所述P型半导体层的另一边界。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110137253A (zh) * 2019-04-25 2019-08-16 芜湖启迪半导体有限公司 一种耐高压的hemt器件及制备方法
CN110600548A (zh) * 2019-09-20 2019-12-20 中国电子科技集团公司第十三研究所 增强型异质结场效应晶体管
CN111009580A (zh) * 2018-10-04 2020-04-14 新唐科技股份有限公司 高电子迁移率晶体管元件及其制造方法
CN111370483A (zh) * 2020-02-27 2020-07-03 常熟理工学院 一种具有多场板结构的氮化镓功率器件及其制备方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7021038B2 (ja) * 2018-09-18 2022-02-16 株式会社東芝 半導体装置
CN113066864B (zh) * 2020-04-30 2022-09-13 英诺赛科(苏州)半导体有限公司 半导体器件
US20220130988A1 (en) * 2020-10-27 2022-04-28 Texas Instruments Incorporated Electronic device with enhancement mode gallium nitride transistor, and method of making same
TWI803845B (zh) * 2021-03-24 2023-06-01 新唐科技股份有限公司 半導體結構
KR20220138756A (ko) * 2021-04-06 2022-10-13 삼성전자주식회사 파워 소자 및 그 제조방법
WO2024030127A1 (en) * 2022-08-03 2024-02-08 Vishay Siliconix Llc P-gan high electron mobility transistor field plating
CN115732563A (zh) * 2022-11-29 2023-03-03 西安电子科技大学 一种热电优化的鳍式氧化镓mosfet结构及制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080149965A1 (en) * 2006-12-21 2008-06-26 Kazuhiro Kaibara Transistor and method for fabricating the same
CN102388441A (zh) * 2009-04-08 2012-03-21 宜普电源转换公司 增强型GaN高电子迁移率晶体管器件及其制备方法
KR20140115585A (ko) * 2013-03-21 2014-10-01 서울반도체 주식회사 멀티 필드 플레이트 트랜지스터 및 그 제조 방법
CN104201201A (zh) * 2014-09-16 2014-12-10 电子科技大学 一种用于GaN基HEMT器件的自适应偏置场板
CN104269434A (zh) * 2014-09-19 2015-01-07 苏州捷芯威半导体有限公司 一种高电子迁移率晶体管
CN104979387A (zh) * 2014-04-10 2015-10-14 丰田自动车株式会社 开关元件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111985B2 (ja) * 1998-06-16 2000-11-27 日本電気株式会社 電界効果型トランジスタ
JP6056435B2 (ja) * 2012-12-07 2017-01-11 ソニー株式会社 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080149965A1 (en) * 2006-12-21 2008-06-26 Kazuhiro Kaibara Transistor and method for fabricating the same
CN102388441A (zh) * 2009-04-08 2012-03-21 宜普电源转换公司 增强型GaN高电子迁移率晶体管器件及其制备方法
KR20140115585A (ko) * 2013-03-21 2014-10-01 서울반도체 주식회사 멀티 필드 플레이트 트랜지스터 및 그 제조 방법
CN104979387A (zh) * 2014-04-10 2015-10-14 丰田自动车株式会社 开关元件
CN104201201A (zh) * 2014-09-16 2014-12-10 电子科技大学 一种用于GaN基HEMT器件的自适应偏置场板
CN104269434A (zh) * 2014-09-19 2015-01-07 苏州捷芯威半导体有限公司 一种高电子迁移率晶体管

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111009580A (zh) * 2018-10-04 2020-04-14 新唐科技股份有限公司 高电子迁移率晶体管元件及其制造方法
CN111009580B (zh) * 2018-10-04 2023-09-08 新唐科技股份有限公司 高电子迁移率晶体管元件及其制造方法
CN110137253A (zh) * 2019-04-25 2019-08-16 芜湖启迪半导体有限公司 一种耐高压的hemt器件及制备方法
CN110600548A (zh) * 2019-09-20 2019-12-20 中国电子科技集团公司第十三研究所 增强型异质结场效应晶体管
CN111370483A (zh) * 2020-02-27 2020-07-03 常熟理工学院 一种具有多场板结构的氮化镓功率器件及其制备方法
CN111370483B (zh) * 2020-02-27 2023-05-26 常熟理工学院 一种具有多场板结构的氮化镓功率器件及其制备方法

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