CN108110032A - Double-sided OLED display and preparation method thereof - Google Patents
Double-sided OLED display and preparation method thereof Download PDFInfo
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- CN108110032A CN108110032A CN201711320324.3A CN201711320324A CN108110032A CN 108110032 A CN108110032 A CN 108110032A CN 201711320324 A CN201711320324 A CN 201711320324A CN 108110032 A CN108110032 A CN 108110032A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention provides a kind of double-sided OLED display and preparation method thereof.The double-sided OLED display includes array substrate and multiple OLED device and pixel isolation column on array substrate,Array substrate is equipped with multiple pixel regions in array arrangement,The plurality of pixel region includes the first pixel region and the second pixel region that are arranged alternately successively,The intersection that pixel isolation column corresponds to adjacent pixel region is set,Multiple OLED device include the first OLED device being arranged in the first pixel region and the second OLED device in the second pixel region,The structure of first OLED device and the second OLED device is inverted,Light emission direction is opposite,So that the double-sided OLED display is in display,To first,Pixel where second OLED device provides positive display signal and reversely shows signal respectively,Double-sided display can be realized,Expand the application range of OLED display.
Description
Technical field
The present invention relates to display technology fields more particularly to a kind of double-sided OLED display and preparation method thereof.
Background technology
Flat-panel display device has many merits such as thin fuselage, power saving, radiationless, is widely used.It is existing
Flat-panel display device mainly includes liquid crystal display device (Liquid Crystal Display, LCD) and organic electroluminescent is shown
Show device (Organic Light Emitting Display, OLED).OLED display device is due to being provided simultaneously with self-luminous, no
Need backlight, contrast are high, thickness is thin, visual angle is wide, reaction speed is fast, available for flexibility panel, use temperature range extensively, structure
It makes and the excellent specific properties such as processing procedure is simpler, is unanimously acknowledged as the mainstream technology of next-generation display, has obtained major display
The favor of producer.OLED display device generally includes：Substrate, the anode on substrate, the hole injection layer on anode,
Hole transmission layer on hole injection layer, the luminescent layer on hole transmission layer, the electron-transport on luminescent layer
Layer, the electron injecting layer on electron transfer layer and the cathode on electron injecting layer, luminescence mechanism are semiconductor material
Material and luminous organic material pass through carrier injection and composite guide photoluminescence under electric field driven.Specifically, OLED display device
Generally use tin indium oxide (ITO) electrode and metal electrode are respectively as anode and cathode, under certain voltage driving, electronics and
Hole is injected into electron injecting layer and hole injection layer from cathode and anode respectively, and electron transfer layer is passed through in electronics and hole respectively
Luminescent layer is moved to hole transmission layer, and is met in luminescent layer, form exciton and excites light emitting molecule, the latter passes through spoke
It penetrates relaxation and sends visible ray.
With the development of display technology, reaction speed is fast, high resolution, image quality except display device is required to possess by consumer
Outside the characteristics of fine and smooth, the breakthrough in function and display pattern is also pursued.Therefore, double-sided OLED display device is come into being, two-sided
OLED display can also extend image spacing, be switched fast in addition to possessing the various characteristics of common OLED display
With handling multiple display pictures, there is huge application space in advertising and portable electronic product.Current is two-sided
OLED display is mostly simply assembled two independent OLED display devices back-to-back, to realize double-sided display, knot
Structure is more thick and heavy, and technique is relative complex, and cost of manufacture is higher, does not meet the desired frivolous requirement with high performance-price ratio of consumer.
The content of the invention
It is an object of the invention to provide a kind of double-sided OLED displays, can realize double-sided display, have a wide range of application.
Another object of the present invention is to provide a kind of production method of double-sided OLED display, double-sided OLED obtained is shown
Show that device can realize double-sided display, have a wide range of application.
To achieve the above object, present invention firstly provides a kind of double-sided OLED display, including：Array substrate, arranged on battle array
Multiple OLED device on row substrate and the pixel isolation column on array substrate；
The array substrate is equipped with multiple pixel regions in array arrangement, and the multiple pixel region includes replacing successively
The first pixel region and the second pixel region set；The intersection that the pixel isolation column corresponds to adjacent pixel region is set；
The multiple OLED device includes the first OLED device being arranged in the first pixel region and in the second pixel region
The second OLED device；First OLED device include set gradually from the bottom to top the first anode, the first hole injection layer,
First hole transmission layer, the first luminescent layer, the first electron transfer layer and the first cathode；Second OLED device include by down toward
On the second cathode, the second electron transfer layer, the second luminescent layer, the second hole transmission layer, the second hole injection layer that set gradually
And second plate；
The material of the first anode and second plate is transparent material；The material of first cathode and the second cathode
It is opaque material.
Further include the encapsulated layer in multiple OLED device and pixel isolation column.
The encapsulated layer is glass plate or thin-film encapsulation layer.
The OLED display has multiple pixels in array arrangement, and multiple pixels on the array substrate are distinguished
Not corresponding with multiple pixels, each pixel includes an OLED device, and the double-sided OLED display is in display, to including the
The pixel of one OLED device provides positive display data-signal, and reversed display data is provided to the pixel including the second OLED device
Signal.
The material of first cathode and the second cathode is aluminium, silver or magnesium；
The material of the first anode and second plate is the conjunction of tin indium oxide, indium zinc oxide or tin indium oxide and metal
Gold.
The present invention also provides a kind of production methods of double-sided OLED display, include the following steps：
Step S1, array substrate is provided；
The array substrate is equipped with multiple pixel regions in array arrangement, and the pixel region includes being arranged alternately successively
The first pixel region and the second pixel region；
Step S2, the intersection on array substrate in adjacent pixel region sets pixel isolation column；
Step S3, on array substrate in forming the first anode in the first pixel region；In the second pixel on array substrate
The second cathode is formed in area；
Step S4, the first hole injection layer is formed on the first anode；The second electron transfer layer is formed on the second cathode；
The first hole transmission layer is formed on the first hole injection layer；The second luminescent layer is formed on the second electron transfer layer；First
The first luminescent layer is formed on hole transmission layer；The second hole transmission layer is formed on the second luminescent layer；The shape on the first luminescent layer
Into the first electron transfer layer；The second hole injection layer is formed on the second hole transmission layer；
Step S5, the first cathode is formed on the first electron transfer layer；Second plate is formed on the second hole injection layer；
The material of the first anode and second plate is transparent material；The material of first cathode and the second cathode
It is opaque material.
It further includes：Step S6, encapsulated layer is set on the first cathode, second plate and pixel isolation column；
The encapsulated layer is glass plate or thin-film encapsulation layer.
In the step S3, the first anode is formed on array substrate by way of sputtering or being deposited, by being deposited, splashing
It penetrates or the mode of wire mark forms the second cathode on array substrate；
In the step S4, be deposited, print, print or ink-jet by way of form on the first anode the first hole and note
Enter layer, form on the second cathode the second electron transfer layer, form on the first hole injection layer the first hole transmission layer,
The second luminescent layer is formed on two electron transfer layers, forms on the first hole transmission layer the first luminescent layer, on the second luminescent layer
The second hole transmission layer is formed, the first electron transfer layer is formed on the first luminescent layer and forms on the second hole transmission layer
Two hole injection layers；
In the step S5, sputter, be deposited or wire mark by way of the first cathode is formed on the first electron transfer layer,
By way of sputtering or being deposited second plate is formed on the second hole injection layer.
The step S3 is specially：Using a fine metal mask plate on array substrate in shape is deposited in the first pixel region
Into the first anode, then translate the fine metal mask plate, using the fine metal mask plate on array substrate in
Vapor deposition forms the second cathode in two pixel regions；
The step S4 is specifically included：
Step S41, the fine metal mask plate is translated, is deposited using the fine metal mask plate on the first anode
The first hole injection layer is formed, then translates the fine metal mask plate, using the fine metal mask plate and second
Vapor deposition forms the second electron transfer layer on cathode；
Step S42, the fine metal mask plate is translated, using the fine metal mask plate in the first hole injection layer
Upper vapor deposition forms the first hole transmission layer, then translates the fine metal mask plate, is existed using the fine metal mask plate
Vapor deposition forms the second luminescent layer on second electron transfer layer；
Step S43, the fine metal mask plate is translated, using the fine metal mask plate in the first hole transmission layer
Upper vapor deposition forms the first luminescent layer, the fine metal mask plate is then translated, using the fine metal mask plate second
Vapor deposition forms the second hole transmission layer on luminescent layer；
Step S44, the fine metal mask plate is translated, is steamed using the fine metal mask plate on the first luminescent layer
Plating forms the first electron transfer layer, the fine metal mask plate is then translated, using the fine metal mask plate second
Vapor deposition forms the second hole injection layer on hole transmission layer；
The step S5 is specially：The fine metal mask plate is translated, using the fine metal mask plate first
Vapor deposition forms the first cathode on electron transfer layer, then translates the fine metal mask plate, utilizes the fine metal mask
Plate is deposited on the second hole injection layer and forms second plate.
The material of first cathode and the second cathode is aluminium, silver or magnesium；
The material of the first anode and second plate is the conjunction of tin indium oxide, indium zinc oxide or tin indium oxide and metal
Gold.
Beneficial effects of the present invention：A kind of double-sided OLED display provided by the invention, including array substrate and is arranged on
Multiple OLED device and pixel isolation column on array substrate, array substrate are equipped with multiple pixel regions in array arrangement,
The plurality of pixel region includes the first pixel region and the second pixel region that are arranged alternately successively, and pixel isolation column corresponds to adjacent pixel
The intersection in area is set, and multiple OLED device include the first OLED device being arranged in the first pixel region and arranged on the second pixel region
The structure of the second interior OLED device, the first OLED device and the second OLED device is inverted, and light emission direction is on the contrary, so that this pair
Face OLED display display when, to the pixel where first, second OLED device provide respectively positive display signal and reversely
Show signal, you can realize double-sided display, expand the application range of OLED display.A kind of double-sided OLED provided by the invention
The production method of display, double-sided OLED display obtained can realize double-sided display, have a wide range of application.
Description of the drawings
In order to be further understood that the feature of the present invention and technology contents, refer to below in connection with the detailed of the present invention
Illustrate and attached drawing, however attached drawing is only provided with reference to illustrating to use, being not used for being any limitation as the present invention.
In attached drawing,
Fig. 1 is the structure diagram of the double-sided OLED display of the present invention；
Fig. 2 is the flow chart of the production method of the double-sided OLED display of the present invention；
Fig. 3 is the schematic diagram of the step S1 and step S2 of the production method of the double-sided OLED display of the present invention；
Fig. 4 and Fig. 5 is the schematic diagram of the step S3 of the production method of the double-sided OLED display of the present invention；
Fig. 6 is the schematic diagram of the step S4 of the production method of the double-sided OLED display of the present invention；
Fig. 7 and Fig. 8 is the schematic diagram of the step S41 of the production method of the double-sided OLED display of the present invention；
Fig. 9 is the schematic diagram of the step S5 of the production method of the double-sided OLED display of the present invention.
Specific embodiment
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with being preferably implemented for the present invention
Example and its attached drawing are described in detail.
Referring to Fig. 1, the present invention provides a kind of double-sided OLED display, including：Array substrate 10, arranged on array substrate 10
On multiple OLED device 20, the pixel isolation column 30 on array substrate 10 and arranged on multiple OLED device 20 and pixel
Encapsulated layer 40 on insulated column 30.
Wherein, the array substrate 10 is equipped with multiple pixel regions 11 in array arrangement, the multiple pixel region 11
Including the first pixel region 111 and the second pixel region 112 being arranged alternately successively；The pixel isolation column 30 corresponds to adjacent pixel
The intersection in area 11 is set；
The multiple OLED device 20 includes the first OLED device 21 being arranged in the first pixel region 111 and arranged on the second picture
The second OLED device 22 in plain area 112；First OLED device 21 includes the first anode set gradually from the bottom to top
211st, the first hole injection layer 212, the first hole transmission layer 213, the first luminescent layer 214, the first electron transfer layer 215 and first
Cathode 216；Second OLED device 22 includes the second cathode 221, the second electron transfer layer that set gradually from the bottom to top
222nd, the second luminescent layer 223, the second hole transmission layer 224, the second hole injection layer 225 and second plate 226；
The material of the first anode 211 and second plate 226 is transparent material；First cathode 216 and second
The material of cathode 221 is opaque material.
Specifically, the array substrate 10 includes the tft array layer of substrate and setting on substrate.
Specifically, the substrate is transparent substrates.
Specifically, referring to Fig. 1, the OLED display has multiple pixels 90 in array arrangement, the array
Multiple pixel regions 11 on substrate 10 are corresponding with multiple pixels 90 respectively, and each pixel 90 includes an OLED device 20, certainly,
Each pixel 90 further includes the part being located in the tft array layer of array substrate 10 in corresponding pixel region 11, by OLED device
20 and tft array layer corresponding portion in thin film transistor (TFT) composition pixel-driving circuit, to be driven hair to OLED device 20
Light.
It should be noted that the double-sided OLED display of the present invention, includes first due to being equipped on array substrate 10
Multiple OLED device 20 of 21 and second OLED device 22 of OLED device, the first OLED device 21 and the second OLED device 22 are successively
It is arranged alternately, at the same time, the structure of the first OLED device 21 and the second OLED device 22 is inverted, specifically, the first OLED devices
The transparent first anode 211 of part 21 is set close to array substrate 10, and the first opaque cathode 216 is set away from array substrate 10
It puts, the transparent second plate 226 of the second OLED device 22 is set away from array substrate 10, and the second opaque cathode 221 is close
Array substrate 10 is set, and is made after being driven to the first OLED device 21 and the second OLED device 22, the first OLED device 21
The light that first luminescent layer 214 is sent can be projected from 10 one side of array substrate, and the second luminescent layer 223 of the second OLED device 22
The light sent can be projected from 40 one side of encapsulated layer, thus by when double-sided OLED display is shown, to including first
The pixel 90 of OLED device 21 provides positive display data-signal, is provided to the pixel 90 including the second OLED device 22 reversely aobvious
Show data-signal, you can image corresponding with reverse data signal is shown in the one side of double-sided OLED display encapsulated layer 40, together
When 10 one side of array substrate show image corresponding with forward data signal, certainly, also can be double so as to fulfill double-sided display
When face OLED display is shown, reversed display data signal is provided to the pixel 90 including the first OLED device 21, to bag
The pixel 90 for including the second OLED device 22 provides positive display data-signal, can equally realize double-sided display, further, also
Can only display data signal be provided to the pixel 90 including the first OLED device 21 or only to including the second OLED device 22
Pixel 90 provides display data signal, remaining pixel 90 does not provide display data signal, so as to fulfill one side show, makes this hair
Bright double-sided OLED display device can be freely selected according to use demand carries out double-sided display or one side show, so as to improve
The scope of application of OLED display.
Specifically, the second luminescent layer 223 of the first luminescent layer 214 and the second OLED device 22 of the first OLED device 21
Size may be the same or different, when the two size difference, it can be achieved that the two sides of double-sided OLED display device can show resolution
The different picture of rate.
Specifically, the encapsulated layer 40 is glass plate or thin-film encapsulation layer.
Further, the thin-film encapsulation layer can be overlapped with organic layer by inorganic layer and formed.
Specifically, the material of 216 and second cathode 221 of the first cathode is metal, concretely aluminium (Al), silver-colored (Ag)
Or other light tight and conductive materials also may be selected in magnesium (Mg), the material of certain first cathode, 216 and second cathode 221
Material.
Specifically, the material of the first anode 211 and second plate 226 can be tin indium oxide (ITO), indium zinc oxide
(IZO) or the alloy of tin indium oxide and metal, it also may be selected in the material of certain first anode 211 and second plate 226
His light transmission and the material of conduction.
Referring to Fig. 2, based on same inventive concept, the present invention also provides a kind of production method of double-sided OLED display,
Include the following steps：
Step S1, referring to Fig. 3, providing array substrate 10；
The array substrate 10 is equipped with multiple pixel regions 11 in array arrangement, and the pixel region 11 includes handing over successively
For the first pixel region 111 and the second pixel region 112 of setting.
Specifically, the array substrate 10 includes the tft array layer of substrate and setting on substrate.
Specifically, the substrate is transparent substrates.
Step S2, referring to Fig. 3, the intersection in adjacent pixel region 11 on array substrate 10 sets pixel isolation column
30。
Step S3, Fig. 4 and Fig. 5 is referred to, in the formation first anode 211 in the first pixel region 111 on array substrate 10；
In the second cathode 221 of formation in the second pixel region 112 on array substrate 10；
Wherein, the material of the first anode 211 is transparent material, and the material of second cathode 221 is opaque material
Material.
Specifically, the material of second cathode 221 is metal, concretely aluminium, silver or magnesium, certain second cathode
Other light tight and conductive materials also may be selected in 221 material.
Specifically, the material of the first anode 211 can be tin indium oxide, indium zinc oxide or tin indium oxide and metal
The material of other light transmissions and conduction also may be selected in alloy, the material of certain first anode 211.
Specifically, in the step S3, can by way of vacuum film formation, such as sputtering or vapor deposition mode, in array
The first anode 211 is formed on substrate 10, can by vacuum film formation mode, such as vapor deposition, sputtering or wire mark mode or pass through
The mode of antivacuum film forming forms the second cathode 221 on array substrate 10.
Preferably, the step S3 is specially：Using a fine metal mask plate (fine mask) on array substrate 10
The first anode 211 is formed in vapor deposition in the first pixel region 111, then translates the fine metal mask plate, using described fine
Metal mask plate forms the second cathode 221 on array substrate 10 in vapor deposition in the second pixel region 112.Certainly, the step S3
Different mask plates can also be used, making 211 and second cathode 221 of the first anode is deposited respectively, it is empty that different processing procedures can also be used
Between vapor deposition make 211 and second cathode 221 of the first anode.
Step S4, referring to Fig. 6, forming the first hole injection layer 212 on the first anode 211；On the second cathode 221
Form the second electron transfer layer 222；The first hole transmission layer 213 is formed on the first hole injection layer 212；It is passed in the second electronics
The second luminescent layer 223 is formed on defeated layer 222；The first luminescent layer 214 is formed on the first hole transmission layer 213；It shines second
The second hole transmission layer 224 is formed on layer 223；The first electron transfer layer 215 is formed on the first luminescent layer 214；It is empty second
The second hole injection layer 225 is formed in cave transport layer 224.
Specifically, in the step S4, by way of vacuum film formation, such as vapor deposition, printing, printing or the side of ink-jet
Formula, formed on the first anode 211 first hole injection layer 212, formed on the second cathode 221 second electron transfer layer 222,
The first hole transmission layer 213 is formed on the first hole injection layer 212, formation second shines on the second electron transfer layer 222
Layer 223 forms the first luminescent layer 214 on the first hole transmission layer 213, the second hole biography is formed on the second luminescent layer 223
Defeated layer 224 forms the first electron transfer layer 215 on the first luminescent layer 214 and forms second on the second hole transmission layer 224
Hole injection layer 225.
Preferably, the step S4 is specifically included：
Step S41, Fig. 7 and Fig. 8 is referred to, translates the fine gold for having made 211 and second cathode 221 of the first anode
Belong to mask plate, be deposited using the fine metal mask plate on the first anode 211 and form the first hole injection layer 212, then
The fine metal mask plate is translated, vapor deposition forms the second electricity using the fine metal mask plate and on the second cathode 221
Sub- transport layer 222；
Step S42, the fine metal mask plate is translated, using the fine metal mask plate in the first hole injection layer
Vapor deposition forms the first hole transmission layer 213 on 212, then translates the fine metal mask plate, is covered using the fine metal
Diaphragm plate is deposited on the second electron transfer layer 222 forms the second luminescent layer 223；
Step S43, the fine metal mask plate is translated, using the fine metal mask plate in the first hole transmission layer
Vapor deposition forms the first luminescent layer 214 on 213, then translates the fine metal mask plate, utilizes the fine metal mask plate
Vapor deposition forms the second hole transmission layer 224 on the second luminescent layer 223；
Step S44, the fine metal mask plate is translated, using the fine metal mask plate in the first luminescent layer 214
Upper vapor deposition forms the first electron transfer layer 215, then translates the fine metal mask plate, utilizes the fine metal mask plate
Vapor deposition forms the second hole injection layer 225 on the second hole transmission layer 224；
Certainly, the step S4 can also be used different mask plates and the first hole injection layer 212, second of making be deposited respectively
Electron transfer layer 222, the first hole transmission layer 213, the second luminescent layer 223, the first luminescent layer 214, the second hole transmission layer
224th, the first electron transfer layer 215 and the second hole injection layer 225 can also be used different process volumes and making are deposited respectively
One hole injection layer 212, the second electron transfer layer 222, the first hole transmission layer 213, the second luminescent layer 223, the first luminescent layer
214th, the second hole transmission layer 224, the first electron transfer layer 215 and the second hole injection layer 225.
Step S5, referring to Fig. 9, forming the first cathode 216 on the first electron transfer layer 215；It is injected in the second hole
Second plate 226 is formed on layer 225；
Wherein, the equal transparent material of material of the second plate 226；The material of first cathode 216 is opaque material
Material.
Specifically, the first anode 211, the first hole injection layer 212, the first hole transmission layer 213, the first luminescent layer
214th, the first electron transfer layer 215 and the first cathode 216 form the first OLED device 21；Second cathode 221, the second electronics
Transport layer 222, the second luminescent layer 223, the second hole transmission layer 224, the second hole injection layer 225, second plate 222 form the
Two OLED device 22.
Specifically, the material of first cathode 216 is metal, concretely aluminium, silver or magnesium, certain first cathode
Other light tight and conductive materials also may be selected in 216 material.
Specifically, the material of the second plate 226 can be tin indium oxide, indium zinc oxide or tin indium oxide and metal
The material of other light transmissions and conduction also may be selected in alloy, the material of certain second plate 226.
Specifically, in the step S5, by way of vacuum film formation, such as sputtering, vapor deposition or wire mark mode or
By way of antivacuum film forming, the first cathode 216 is formed on the first electron transfer layer 215, by way of vacuum film formation,
Such as the mode of sputtering or vapor deposition, second plate 226 is formed on the second hole injection layer 225.
Preferably, the step S5 is specially：It translates and described has made the fine of 211 and second cathode 221 of the first anode
Metal mask plate is deposited on the first electron transfer layer 215 using the fine metal mask plate and forms the first cathode 216, connect
The translation fine metal mask plate, formation is deposited on the second hole injection layer 225 using the fine metal mask plate
Second plate 226.
Step S6, referring to Fig. 1, setting encapsulated layer on the first cathode 216, second plate 226 and pixel isolation column 30
40。
Specifically, the encapsulated layer 40 is glass plate or thin-film encapsulation layer.
Specifically, referring to Fig. 1, double-sided OLED made from the production method of the double-sided OLED display of the present invention is shown
Device has multiple pixels 90 in array arrangement, multiple pixel regions 11 on the array substrate 10 respectively with multiple pixels
90 correspond to, and each pixel 90 includes one first OLED device 21 or one second OLED device 22, and certainly, each pixel 90 is also wrapped
The part being located in the tft array layer of array substrate 10 in corresponding pixel region 11 is included, by the first OLED device 21 or the second
OLED device 22 and the thin film transistor (TFT) composition pixel-driving circuit in tft array layer corresponding portion, with to the first OLED device
21 and second OLED device 22 be driven it is luminous.
It should be noted that double-sided OLED display made from the production method of the double-sided OLED display of the present invention, by
In being equipped with the first OLED device 21 and the second OLED device 22, the first OLED device 21 and the 2nd OLED devices on array substrate 10
Part 22 is arranged alternately successively, and at the same time, the structure of the first OLED device 21 and the second OLED device 22 is inverted, specifically, the
The transparent first anode 211 of one OLED device 21 is set close to array substrate 10, and the first opaque cathode 216 is away from array
Substrate 10 is set, and the transparent second plate 226 of the second OLED device 22 is set away from array substrate 10, the second opaque cathode
221 are set close to array substrate 10, make after being driven to the first OLED device 21 and the second OLED device 22, the first OLED devices
The light that first luminescent layer 214 of part 21 is sent can be projected from 10 one side of array substrate, and the second of the second OLED device 22 the hair
The light that photosphere 223 is sent can be projected from 40 one side of encapsulated layer, thus by when double-sided OLED display is shown, to bag
The pixel 90 for including the first OLED device 21 provides positive display data-signal, is provided to the pixel 90 including the second OLED device 22
Reversed display data signal, you can figure corresponding with reverse data signal is shown in the one side of double-sided OLED display encapsulated layer 40
Picture, while 10 one side of array substrate shows image corresponding with forward data signal, so as to fulfill double-sided display, certainly, also may be used
When double-sided OLED display is shown, provide reversed display data to the pixel 90 including the first OLED device 21 and believe
Number, positive display data-signal is provided to the pixel 90 including the second OLED device 22, double-sided display can be equally realized, into one
Step ground only can also provide display data signal or only to including the 2nd OLED devices to the pixel 90 including the first OLED device 21
The pixel 90 of part 22 provides display data signal, remaining pixel 90 does not provide display data signal, so as to fulfill one side show,
Make the double-sided OLED display device of the present invention that can be freely selected according to use demand and carry out double-sided display or one side show, so as to
Improve the scope of application of OLED display.
In conclusion the double-sided OLED display of the present invention, multiple including array substrate and on array substrate
OLED device and pixel isolation column, array substrate are equipped with multiple pixel regions in array arrangement, and the plurality of pixel region includes
The first pixel region and the second pixel region being arranged alternately successively, the intersection that pixel isolation column corresponds to adjacent pixel region are set,
Multiple OLED device include the first OLED device being arranged in the first pixel region and the 2nd OLED devices in the second pixel region
The structure of part, the first OLED device and the second OLED device is inverted, and light emission direction is on the contrary, so that the double-sided OLED display exists
During display, positive display signal is provided respectively to the pixel where first, second OLED device and reversely shows signal, you can real
Existing double-sided display expands the application range of OLED display.The production method of the double-sided OLED display of the present invention, it is obtained
Double-sided OLED display can realize double-sided display, have a wide range of application.
The above, for those of ordinary skill in the art, can be with technique according to the invention scheme and technology
Other various corresponding changes and deformation are made in design, and all these changes and deformation should all belong to the claims in the present invention
Protection domain.
Claims (10)
1. a kind of double-sided OLED display, which is characterized in that including：It is array substrate (10), more on array substrate (10)
A OLED device (20) and the pixel isolation column (30) on array substrate (10)；
The array substrate (10) is equipped with multiple pixel regions (11) in array arrangement, and the multiple pixel region (11) includes
The first pixel region (111) and the second pixel region (112) being arranged alternately successively；The corresponding adjacent picture of the pixel isolation column (30)
The intersection of plain area (11) is set；
The multiple OLED device (20) includes the first OLED device (21) being arranged in the first pixel region (111) and arranged on second
The second OLED device (22) in pixel region (112)；First OLED device (21) includes set gradually from the bottom to top the
One anode (211), the first hole injection layer (212), the first hole transmission layer (213), the first luminescent layer (214), the first electronics
Transport layer (215) and the first cathode (216)；Second OLED device (22) includes the second cathode set gradually from the bottom to top
(221), the second electron transfer layer (222), the second luminescent layer (223), the second hole transmission layer (224), the second hole injection layer
(225) and second plate (226)；
The material of the first anode (211) and second plate (226) is transparent material；First cathode (216) and
The material of two cathodes (221) is opaque material.
2. double-sided OLED display as described in claim 1, which is characterized in that further include arranged on multiple OLED device (20) and
Encapsulated layer (40) on pixel isolation column (30).
3. double-sided OLED display as claimed in claim 2, which is characterized in that the encapsulated layer (40) is glass plate or film
Encapsulated layer.
4. double-sided OLED display as described in claim 1, which is characterized in that it is in array that the OLED display, which has multiple,
The pixel (90) of formula arrangement, multiple pixel regions (11) on the array substrate (10) are corresponding with multiple pixels (90) respectively, often
One pixel (90) includes an OLED device (20), and the double-sided OLED display is in display, to including the first OLED device
(21) pixel (90) provides positive display data-signal, is provided to the pixel (90) including the second OLED device (22) reversely aobvious
Show data-signal.
5. double-sided OLED display as described in claim 1, which is characterized in that first cathode (216) and the second cathode
(221) material is aluminium, silver or magnesium；
The material of the first anode (211) and second plate (226) is tin indium oxide, indium zinc oxide or tin indium oxide and metal
Alloy.
6. a kind of production method of double-sided OLED display, which is characterized in that include the following steps：
Array substrate (10) step S1, is provided；
The array substrate (10) is equipped with multiple pixel regions (11) in array arrangement, and the pixel region (11) is included successively
The first pixel region (111) and the second pixel region (112) being arranged alternately；
Step S2, the intersection on array substrate (10) in adjacent pixel region (11) sets pixel isolation column (30)；
Step S3, on array substrate (10) in the formation first anode (211) in the first pixel region (111)；In array substrate
(10) in the second cathode of formation (221) in the second pixel region (112) on；
Step S4, the first hole injection layer (212) is formed on the first anode (211)；Second is formed on the second cathode (221)
Electron transfer layer (222)；The first hole transmission layer (213) is formed on the first hole injection layer (212)；In the second electron-transport
The second luminescent layer (223) is formed on layer (222)；The first luminescent layer (214) is formed on the first hole transmission layer (213)；
The second hole transmission layer (224) is formed on two luminescent layers (223)；The first electron transfer layer is formed on the first luminescent layer (214)
(215)；The second hole injection layer (225) is formed on the second hole transmission layer (224)；
Step S5, the first cathode (216) is formed on the first electron transfer layer (215)；The shape on the second hole injection layer (225)
Into second plate (226)；
The material of the first anode (211) and second plate (226) is transparent material；First cathode (216) and
The material of two cathodes (221) is opaque material.
7. the production method of double-sided OLED display as claimed in claim 6, which is characterized in that further include：Step S6,
Encapsulated layer (40) is set on one cathode (216), second plate (226) and pixel isolation column (30)；
The encapsulated layer (40) is glass plate or thin-film encapsulation layer.
8. the production method of double-sided OLED display as claimed in claim 6, which is characterized in that in the step S3, pass through
Sputtering or vapor deposition mode the first anode (211) is formed on array substrate (10), be deposited, sputter or wire mark by way of
The second cathode (221) is formed on array substrate (10)；
In the step S4, be deposited, print, print or ink-jet by way of on the first anode (211) form the first hole
Implanted layer (212) forms the second electron transfer layer (222), on the first hole injection layer (212) on the second cathode (221)
It forms the first hole transmission layer (213), form on the second electron transfer layer (222) the second luminescent layer (223), in the first hole
Formed in transport layer (213) the first luminescent layer (214), formed on the second luminescent layer (223) the second hole transmission layer (224),
The first electron transfer layer (215) is formed on the first luminescent layer (214) and the second sky is formed on the second hole transmission layer (224)
Cave implanted layer (225)；
In the step S5, sputter, be deposited or wire mark by way of on the first electron transfer layer (215) form the first cathode
(216), by way of sputtering or being deposited second plate (226) is formed on the second hole injection layer (225).
9. the production method of double-sided OLED display as claimed in claim 6, which is characterized in that the step S3 is specially：
The first anode (211) is formed in vapor deposition in the first pixel region (111) on array substrate (10) using a fine metal mask plate,
Then translate the fine metal mask plate, using the fine metal mask plate on array substrate (10) in the second pixel region
(112) vapor deposition forms the second cathode (221) in；
The step S4 is specifically included：
Step S41, the fine metal mask plate is translated, is steamed using the fine metal mask plate on the first anode (211)
Plating forms the first hole injection layer (212), then translates the fine metal mask plate, using the fine metal mask plate and
Vapor deposition forms the second electron transfer layer (222) on the second cathode (221)；
Step S42, the fine metal mask plate is translated, using the fine metal mask plate in the first hole injection layer
(212) vapor deposition forms the first hole transmission layer (213) on, then translates the fine metal mask plate, utilizes the fine gold
Belong to mask plate and the second luminescent layer of formation (223) is deposited on the second electron transfer layer (222)；
Step S43, the fine metal mask plate is translated, using the fine metal mask plate in the first hole transmission layer
(213) vapor deposition forms the first luminescent layer (214) on, then translates the fine metal mask plate, is covered using the fine metal
Diaphragm plate is deposited on the second luminescent layer (223) forms the second hole transmission layer (224)；
Step S44, the fine metal mask plate is translated, using the fine metal mask plate on the first luminescent layer (214)
Vapor deposition forms the first electron transfer layer (215), then translates the fine metal mask plate, utilizes the fine metal mask plate
Vapor deposition forms the second hole injection layer (225) on the second hole transmission layer (224)；
The step S5 is specially：The fine metal mask plate is translated, using the fine metal mask plate in the first electronics
Vapor deposition forms the first cathode (216) in transport layer (215), then translates the fine metal mask plate, utilizes the fine gold
Category mask plate is deposited on the second hole injection layer (225) forms second plate (226).
10. the production method of double-sided OLED display as claimed in claim 6, which is characterized in that first cathode (216)
And second cathode (221) material be aluminium, silver or magnesium；
The material of the first anode (211) and second plate (226) is tin indium oxide, indium zinc oxide or tin indium oxide and metal
Alloy.
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| CN201711320324.3A CN108110032A (en) | 2017-12-12 | 2017-12-12 | Double-sided OLED display and preparation method thereof |
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| CN109494194A (en) * | 2018-11-14 | 2019-03-19 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof |
| CN110931526A (en) * | 2019-11-25 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN112310299A (en) * | 2020-10-27 | 2021-02-02 | 武汉华星光电半导体显示技术有限公司 | Double-sided display panel and preparation method thereof |
| CN112786668A (en) * | 2021-01-08 | 2021-05-11 | 武汉华星光电半导体显示技术有限公司 | Double-sided display panel |
| CN113299705A (en) * | 2021-05-10 | 2021-08-24 | 深圳市华星光电半导体显示技术有限公司 | Double-sided display panel and double-sided display device |
| US11183111B2 (en) | 2019-01-29 | 2021-11-23 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel unit and method for manufacturing the same, and double-sided OLED display device |
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| CN113691751B (en) * | 2021-07-06 | 2024-05-10 | 安徽康佳电子有限公司 | Double-sided display television system |
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| CN110931526B (en) * | 2019-11-25 | 2022-07-12 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN112310299A (en) * | 2020-10-27 | 2021-02-02 | 武汉华星光电半导体显示技术有限公司 | Double-sided display panel and preparation method thereof |
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| CN113299705A (en) * | 2021-05-10 | 2021-08-24 | 深圳市华星光电半导体显示技术有限公司 | Double-sided display panel and double-sided display device |
| CN113691751A (en) * | 2021-07-06 | 2021-11-23 | 安徽康佳电子有限公司 | Double-sided display television system |
| CN113691751B (en) * | 2021-07-06 | 2024-05-10 | 安徽康佳电子有限公司 | Double-sided display television system |
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