CN108108052B

CN108108052B - Laser splicing pattern structure and etching wiring method thereof

Info

Publication number: CN108108052B
Application number: CN201711429710.6A
Authority: CN
Inventors: 李文; 李兆勇; 任小勇
Original assignee: Zhangjiagang Kangdexin Optronics Material Co Ltd
Current assignee: Zhangjiagang Kangdexin Optronics Material Co Ltd
Priority date: 2017-12-26
Filing date: 2017-12-26
Publication date: 2021-12-31
Anticipated expiration: 2037-12-26
Also published as: CN108108052A

Abstract

A laser splicing pattern structure and an etching wiring method thereof belong to the technical field of touch screens, wherein a first etching line is connected with an adjacent second etching line at a splicing position through a first right-angle bending structure; extension lines of the first etching line and the second etching line are overlapped. According to the invention, the horizontal etching line and the vertical etching line which are right-angled are connected to the splicing position of the oblique line section, so that the splicing precision of the oblique line section can be ensured, and short circuit caused by splicing deviation is avoided.

Description

Laser splicing pattern structure and etching wiring method thereof

Technical Field

The invention relates to a technology in the field of touch screens, in particular to a laser splicing pattern structure and an etching wiring method thereof.

Background

Fig. 1A and 1B are schematic diagrams of laser pattern structures of an upper film and a lower film of ITO in a touch screen, respectively. The ITO pattern in the touch screen is manufactured by laser, but the distance of one laser is limited, and splicing is needed, so that ideal etching line routing as shown in FIG. 1C cannot be realized. The laser machine has the problem of concatenation deviation to the direct concatenation of slash and slash, and this kind of concatenation deviation can cause local short circuit phenomenon. At present, most of ITO patterns adopt a diamond structure, and oblique line splicing is inevitably needed, as shown in FIG. 2.

Disclosure of Invention

Aiming at the defects in the prior art, the invention provides a laser splicing pattern structure and an etching wiring method thereof.

The invention is realized by the following technical scheme:

the invention relates to a laser splicing pattern structure.A first etching line is connected with an adjacent second etching line at a splicing position through a right-angle bending structure;

extension lines of the first etching line and the second etching line are overlapped.

The right-angle bending structure comprises a plurality of right-angle corners formed by horizontal etching lines and vertical etching lines, and the horizontal etching lines and the vertical etching lines in the right-angle bending structure are sequentially connected and continuously wired.

Preferably, the right-angle bent structure includes a right-angle corner, the vertical etching line forming the right-angle corner is connected to the first etching line, and the horizontal etching line forming the right-angle corner is connected to the first etching line.

Preferably, the right-angle bending structure is arranged in a plane figure, and the plane figure comprises two groups of opposite angles;

preferably, one axis of the ITO pattern unit bisects one set of opposite corners of the planar pattern, and the other set of opposite corners of the planar pattern is symmetrical with respect to the axis; the number of the plane figures is not less than 2.

Further preferably, 2 or 4 right-angle bent structures are symmetrically arranged in the plane figure.

The length b of the horizontal etching line and the length b of the vertical etching line in the right-angle bending structure are equal, b is not less than 0.2 mm and not more than 0.5a mm, and a is the length of a longer diagonal line in a plane figure.

The invention relates to an etching wiring method of the laser splicing pattern structure, wherein two splicing etching lines and a right-angle bending structure at the connecting position are formed by starting laser for etching once.

The laser splicing pattern structure comprises a plurality of ITO pattern units which are sequentially arranged and connected, in an etching process started by one-time laser, laser routing is more accurate along an obtuse angle or a right angle, and meanwhile, the defect that an explosion point exists when an acute angle is led is avoided.

Technical effects

Compared with the prior art, the invention adopts the right-angled horizontal etching line and the vertical etching line to be connected with the splicing position of the oblique line segment, thereby ensuring the splicing precision of the oblique line segment and avoiding short circuit caused by splicing deviation; and the laser can be continuously wired, so that the efficiency of etching wiring is improved.

Drawings

FIG. 1A is a diagram of a laser pattern structure of an ITO upper film in a touch screen in the prior art;

FIG. 1B is a diagram of a laser pattern of an ITO lower film in a touch screen in the prior art;

FIG. 1C is an ideal routing diagram of the etched lines of the ITO pattern unit;

FIG. 2 is a diagram showing an actual trace of an etching line of an ITO pattern unit;

FIG. 3 is a schematic view of a part of the structure of example 1, in which a broken line indicates an etching line when a right-angle bent structure is not provided;

FIG. 4 is another laser pattern structure in example 1;

in the figure: the etching device comprises a first etching line 1, a second etching line 2, a vertical etching line 3 and a horizontal etching line 4.

Detailed Description

The invention is described in detail below with reference to the drawings and the detailed description.

Example 1

The embodiment comprises a plurality of ITO pattern units which are sequentially arranged and connected, wherein a plurality of sections of etching lines in the ITO pattern units are sequentially connected to form a plurality of diamond structures, and two spliced etching lines at the connecting positions are oblique lines.

Preferably, the diamond-shaped structure is a central symmetry pattern.

This embodiment optimizes the etching line that is in the position department that meets, avoids appearing the concatenation deviation and causes the short circuit, and concrete measure is:

1) in order to improve the etching efficiency, the connecting position of the etching line is preset on a row of continuous diamond structures, and each diamond structure is symmetrically arranged relative to the horizontal axis (shown in FIG. 1C) of the ITO pattern unit;

2) a right-angle bending structure formed by a horizontal etching line 4 and a vertical etching line 3 is arranged at the connection position of the preset etching lines on each diamond structure as shown in FIG. 2, the vertical etching line 3 is connected with a first etching line 1, the horizontal etching line 4 is connected with a second etching line 2, and the extension lines of the first etching line 1 and the second etching line 2 are overlapped;

3) considering the stability of product quality, the patterns formed by etching lines in the ITO pattern units are all symmetrical patterns, and in 2), the non-splicing positions (shown as dotted lines in FIG. 3) on other edges of the diamond structure are all provided with right-angle bending structures, and a new central symmetrical pattern is constructed, as shown in FIG. 3;

therefore, laser etching is carried out, so that continuous wiring can be realized, and etching of the ITO pattern unit is completed.

Preferably, the lengths of the horizontal etching line 4 and the vertical etching line 3 are both b, the range of b is 0.2-0.5 a mm, and a is the distance between opposite angles of the diamond structure.

In this embodiment, the right-angle bending structure is not limited to be recessed in the diamond-shaped structure in fig. 3, but may be protruded outward from the diamond-shaped structure; in addition, the position where the etching lines meet is not limited to the position in the above embodiment, regardless of the problem of the laser etching efficiency; the newly constructed planar graph need not be strictly symmetrical.

As a variation of this embodiment, the connecting position of the etching lines can also be set at the intersection point of two centrosymmetric diamond structures; the horizontal etching lines 4 and the vertical etching lines 3 at the connecting positions of the etching lines can also be arranged as shown in FIG. 4.

It is to be emphasized that: the above embodiments are only preferred embodiments of the present invention, and are not intended to limit the present invention in any way, and all simple modifications, equivalent changes and modifications made to the above embodiments according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.

Claims

1. An etching wiring method of a laser splicing pattern structure is characterized in that a first etching line and a second etching line which have superposed extension lines are connected by adopting a right-angle bending structure at a splicing position;

the right-angle bending structure comprises a plurality of right-angle corners formed by horizontal etching lines and vertical etching lines, and the horizontal etching lines and the vertical etching lines in the right-angle bending structure are sequentially connected and continuously wired;

the first etching line, the second etching line and the right-angle bending structure are formed by starting laser for etching for one time;

the right-angle bending structure is arranged in a plane graph, and the plane graph comprises two groups of opposite angles; one horizontal axis of the ITO pattern unit bisects one set of opposite corners of the planar pattern, and the other set of opposite corners of the planar pattern is symmetrical about the horizontal axis.

2. The method of claim 1, wherein the right-angled folded structure comprises a plurality of right-angled corners formed by horizontal etched lines and vertical etched lines, and the horizontal etched lines and the vertical etched lines are connected in sequence and continuously routed in the right-angled folded structure.

3. The method of claim 2, wherein the right-angled bend structure comprises a right-angled corner, wherein the vertical etching line forming the right-angled corner is connected to the first etching line, and wherein the horizontal etching line forming the right-angled corner is connected to the first etching line.

4. The method of claim 3, wherein the length b of the horizontal etching line and the vertical etching line in the right-angle bending structure is equal, b is not less than 0.2 mm and not more than 0.5a mm, and a is the length of the longer diagonal line in the planar pattern.

5. The method for etching and wiring a laser mosaic pattern structure according to claim 3, wherein 2 or 4 right-angle bent structures are symmetrically arranged in said plane pattern.

6. The method for etching and wiring a laser mosaic pattern structure according to claim 3, wherein the number of said planar patterns is not less than 2.

7. The method for etching and wiring a laser splicing pattern structure according to claim 1, wherein the laser splicing pattern structure comprises a plurality of ITO pattern units which are sequentially arranged and connected, and laser routing is carried out along an obtuse angle or a right angle in an etching process of one laser starting.