CN108092131A - A kind of ladder ridge semiconductor laser and preparation method thereof - Google Patents
A kind of ladder ridge semiconductor laser and preparation method thereof Download PDFInfo
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- CN108092131A CN108092131A CN201611049179.5A CN201611049179A CN108092131A CN 108092131 A CN108092131 A CN 108092131A CN 201611049179 A CN201611049179 A CN 201611049179A CN 108092131 A CN108092131 A CN 108092131A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000003892 spreading Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000554 physical therapy Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
A kind of ladder ridge semiconductor laser and preparation method thereof, the semiconductor laser includes the substrate, under-clad layer, active area, the first top covering, the second top covering, the 3rd top covering and the contact layer that set gradually from bottom to up, the thickness of 3rd top covering is more than the thickness of the second top covering, the contact layer and the 3rd top covering form the first vallate, second top covering forms the second vallate, and the width of second vallate is more than the width of the first vallate；Preparation process includes：（1）Grow under-clad layer, active area, the first top covering, the second top covering, the 3rd top covering and contact layer successively on substrate；（2）Region beyond first bar chart on contact layer is removed, depth to the 3rd top covering bottom surface, form the first vallate；（3）The second top covering two side portions are removed, form the second vallate.The present invention makes threshold current for semiconductor lasers and reliability get both, you can to obtain relatively low operating current, and can have higher power reliability.
Description
Technical field
The present invention relates to a kind of structures of ladder ridge semiconductor laser and preparation method thereof, belong to semiconductor laser
Technical field.
Background technology
In recent years, semiconductor laser is quickly grown, it have it is compact-sized, cost is relatively low, light field be easy to regulation and control etc. it is excellent
Point is widely used in industrial processes, laser display and illumination, optic communication, laser physical therapy etc..It is led compared to bar shaped gain
Draw the strong refraction rate guiding laser of laser and buried structure, the laser of ridge structure not only have it is simple in structure, once
Extension directly obtains, and can provide weak index guide structure, improves differential efficiency, thus is a kind of common laser knot
Structure.
The photoelectric conversion efficiency of semiconductor laser and service life are two highly important parameters.For semiconductor laser
For, it with light emitting diode clearest differences is that it there are threshold currents.When operating current is located at below threshold current, do not have
There is laser output, electric current is to flog a dead horse, so should try every possible means to reduce its threshold current.The threshold value electricity of semiconductor laser
Current density is designed with its epitaxial structure and epitaxial material growth is related, has had been reduced to 1kA/cm in recent years2Within.In threshold value electricity
In the case that current density is constant, the threshold current of device is related with the area of its bar shaped current injection area.Item is wide smaller, realizes and swashs
The threshold current of light output is also just smaller.But its service life with laser is contradiction.Item wide more hour, the horizontal stroke of ridge waveguide
Sectional area is also smaller.In same light power output, the optical power density that Cavity surface is born can become larger, this will accelerate at Cavity surface
The formation and deterioration of defect.When reaching a certain level, the attenuation of laser power is will result in, optics calamity can occur for Cavity surface when serious
Become damage (COD), the failure of laser moment.So to improve the COD power of laser, it is necessary to use wide large-optical-cavity knot
Structure.
Chinese patent literature CN105226502A discloses a kind of narrow vallum type GaAs bases GalnP quantum well structure semiconductors
The preparation method of laser grows the mask of dry etching by utilizing PECVD after extension on piece face spin coating photoresist, then selects
With suitable reticle by the standby mask pattern needed of optical graving, prepare that side is vertical and shape using the mode of dry etching
The relatively good ridge structure of looks finally grows current barrier layer, and stripping photoresist removes the current barrier layer above vallum, prepares
Go out the good ridge structure of side vertical profile.The method can not only utilize the mode of dry etching to prepare the vertical shape in side
Ridge structure of the looks well without block also by the way of growth current barrier layer is removed, forms good Europe on vallum
Nurse contacts, and prevents electric current from laterally revealing, reduces the threshold current of laser.But the as previously mentioned, ridge knot that the method is formed
Structure is narrow, limits the high-power output of laser.Since the optical power density of laser is larger, laser works are reduced
When reliability and the service life.
Chinese patent literature CN1681176A discloses a kind of ridge waveguide high power semiconductor with tapered gain region
Laser structure is divided into single mode area, tapered gain region and the region of flat region three.It has output power, higher of bigger
Saturation current, and nearly diffraction limited beam is can obtain, reduce power density, the catastrophic optical damage for inhibiting light-emitting surface, effectively change
The saturated characteristic of kind device.But tapered gain region etching precision is required it is very high, if there is deflection, in tapered gain region
Light beam will be revealed, cause laser to go out light loss larger.
The content of the invention
The problem of for traditional ridge type semiconductor laser threshold current and conflicting service life, the present invention provide a kind of threshold
The value ladder ridge semiconductor laser that electric current is small, reliability and service life are high.A kind of ladder ridge type semiconductor is provided simultaneously to swash
The preparation method of light device.
The ladder ridge semiconductor laser of the present invention, using following technical scheme：
The semiconductor laser, including set gradually from bottom to up substrate, under-clad layer, active area, the first top covering,
Two top coverings, the 3rd top covering and contact layer, the thickness of the 3rd top covering are more than the thickness of the second top covering, the contact
Layer forms the first vallate with the 3rd top covering, and second top covering forms the second vallate, and the width of second vallate is more than
The width of first vallate.
Above-mentioned semiconductor laser forms whole ladder ridge structure.
The substrate, under-clad layer, active area and contact layer are consistent with conventional semiconductor laser, and the present invention does not limit.
The thickness of first top covering is 100-300nm.The advantage designed herein is, uses the of this thickness range
One top covering can make near field light spot reduce absorption of the surface defect to light away from device surface.Simultaneously, moreover it is possible to electric current be controlled to exist
The spreading range before active area is reached, reduces threshold current.
The thickness of second top covering is 300-500nm, the thickness 700-900nm of the 3rd top covering；Second top covering
Overall thickness with the 3rd top covering is 1000-1200nm.
The width of first vallate is 20-50um.
The width of second vallate is 20-50 μm bigger than the width of the first vallate.
3rd top covering is contacted directly with contact layer, the influence bigger to current expansion.The advantage designed herein is,
The thickness of three top coverings is more than the thickness of the second top covering, and the width of the 3rd top covering is less than the second top covering, can be by electricity
The predominating path control of stream reduces threshold current in the 3rd top covering, spreading range of the reduction electric current before active area is reached.
Second top covering is close to active area, the influence bigger to horizontal effective refractive index, and horizontal effective refractive index is straight
It connects and determines horizontal light field scope.The advantage designed herein is, the width of the second vallate is more than the width of the first vallate, can be with
Horizontal effective refractive index is reduced, increases horizontal light field scope, reduces the optical power density of Cavity surface.
The preparation method of above-mentioned ladder ridge semiconductor laser, specific steps include：
(1) grow under-clad layer, active area, the first top covering, the second top covering, the 3rd top covering successively on substrate and connect
Contact layer；
(2) one layer of photoresist of uniform fold on the contact layer, by graph exposure, surface leaves and first on the contact layer
First bar chart of vallate equivalent width；
(3) using wet etching or dry etch process, the region beyond the first bar chart on contact layer is removed, it is deep
Degree is to the 3rd top covering bottom surface and exposes the second top covering upper surface, forms the first vallate；
(4) contact layer photomask surface glue is removed, then covers one layer of photoresist in entire upper surface again, and passes through figure
It is exposed on the second bar chart left on the second top covering of the first vallate upper surface and exposing with the second vallate equivalent width；
(5) using wet etching or dry etch process, the second top covering two side portions are removed, form the second vallate,
Remove photomask surface glue.
According to standard semiconductor laser fabrication technique making devices.
Compared to traditional ridge type semiconductor laser, the present invention is set in two stepped vallates, is made close to contact layer portion
The width for dividing the first vallate is small, can reduce the threshold current of semiconductor laser；Second vallate of close active region
Width is big, can reduce optical power density, and then promotes COD and the service life of semiconductor laser.It solves traditional ridge partly to lead
The problem of body laser threshold current and reliability cannot get both, you can to obtain relatively low operating current, and can have higher
Power reliability.
Description of the drawings
Fig. 1 is gained initial configuration schematic diagram in preparation process of the present invention.
Fig. 2 is structure diagram of the gained containing the first vallate in preparation process of the present invention.
Fig. 3 is the structure diagram of ladder ridge semiconductor laser prepared by the present invention.
Current expansion and the signal of near field hot spot when Fig. 4 is ladder ridge semiconductor laser work prepared by the present invention
Scheme
In figure, 1, substrate, 2, under-clad layer, 3, active area, the 4, first top covering, the 5, second top covering, the 6, the 3rd top covering,
7th, contact layer, the 8, first vallate, the 9, second vallate, 10, current expansion path, 11, near field hot spot.
Specific embodiment
Embodiment 1
The ladder ridge semiconductor laser of the present invention, referring to Fig. 1 and Fig. 3, including the substrate set gradually from bottom to up
1st, under-clad layer 2, active area 3, the first top covering 4, the second top covering 5, the 3rd top covering 6 and contact layer 7.
Substrate 1, under-clad layer 2, active area 3 and contact layer 7 are consistent with conventional semiconductor laser.Substrate 1 is 2 degree of drift angles
GaAs substrates；Under-clad layer 2 is Al0.6Ga0.4As materials；Active area 3 is Al0.3Ga0.7As/Al0.1Ga0.9As quantum well structures, hair
Near optical wavelength 800nm.
First top covering 4 is the Al of thickness 100-300nm0.6Ga0.4As；Second top covering 5 is thickness 300-500nm's
Al0.2Ga0.3In0.5P.3rd top covering 6 is the Al of thickness 700-900nm0.6Ga0.4As, the second top covering 5 and the 3rd top covering 6
Overall thickness be 1000-1200nm.Contact layer 7 is the heavy doping GaAs of thickness 200nm.
The thickness range of first top covering 4 can make near field light spot reduce suction of the surface defect to light away from device surface
It receives.Simultaneously, moreover it is possible to control spreading range of the electric current before active area is reached, reduce threshold current.3rd top covering 6 and contact layer
7 contact directly, the influence bigger to current expansion.The thickness of 3rd top covering 6 is more than the thickness of the second top covering 5, and the 3rd
The width of top covering 6 is less than the width of the second top covering 5, can control the predominating path of electric current in the 3rd top covering, reduce
Spreading range of the electric current before active area is reached reduces threshold current.Second top covering 5 is close to active area 3, to laterally effectively rolling over
The influence bigger of rate is penetrated, and horizontal effective refractive index is the horizontal light field scope of direct decision.
Referring to Fig. 3, by removing 7 two side portions of the 3rd top covering 6 and contact layer, on the 3rd top covering 6 and contact layer 7
Form the first vallate 8.By removing 5 two layers of material of the second top covering, the second vallate 9 is formed on the second top covering 5.First
The width of ridge 8 is 20-50 μm.The width of second vallate 9 is 20-50 μm bigger than the width of the first vallate 8.The thickness of 3rd top covering 6
Spend the thickness (and thickness of the second vallate 9) that (and thickness of the first vallate 8) is more than the second top covering 5.
The preparation process of above-mentioned ladder ridge semiconductor laser is as described below.
(1) using Metalorganic Chemical Vapor Deposition, under-clad layer 2 is grown successively on substrate 1, on active area 3, first
Covering 4, the second top covering 5, the 3rd top covering 6 and contact layer 7 (contact layer 7 and the width of remaining each layer are consistent at this time),
As shown in Figure 1.
(2) one layer of photoresist of uniform fold on contact layer 7 is left and first by graph exposure on contact layer 7
The first consistent bar chart of the width (20-50 μm) of vallate 8；
(3) it is put into phosphoric acid and hydrogen peroxide solution, it is very fast to arsenide corrosion rate using it and fast to phosphide corrosion
The very slow selective corrosion characteristic of rate, wet etching remove the first bar chart beyond 7 both sides of contact layer part, depth until
The second top covering 5 is exposed in the bottom surface of 3rd top covering 6, forms the first vallate 8, gained semiconductor laser structure such as Fig. 2 institutes
Show.
(4) after removing contact layer 7 upper surface (and 8 upper surface of the first vallate) photoresist, then partly led obtained by Fig. 2 again
One layer of photoresist of body laser surface uniform fold, and by graph exposure on 8 surface of the first vallate and the second top covering 5
Leave second bar chart consistent with the width of the second vallate 9 (20-50 μm bigger than the first vallate 8)；
(5) it is put into hydrochloric acid solution, it is very fast and very slow to arsenide corrosion rate to phosphide corrosion rate using it
Selective corrosion characteristic, wet etching remove 5 two side portions of the second top covering beyond the second bar chart, form the second vallate 9,
Obtain ladder ridge semiconductor laser shown in Fig. 3.Remove photomask surface glue.
Be fabricated to device according to standard semiconductor laser fabrication technique afterwards, current expansion path 10 during work and
Near field hot spot 11 is as shown in Figure 4.It can be seen that the item of the first vallate 8 is wide smaller, current expansion is limited, simultaneously because
The item of second vallate 9 is wide larger, and horizontal light field becomes larger, and optical power density becomes smaller.
Embodiment 2
Difference lies in substrate 1 is the GaN substrate of 0 degree of drift angle to the present embodiment with embodiment 2；Under-clad layer 2 is
Al0.1Ga0.9N materials；Active area 3 is GaN/In0.1Ga0.9N quantum well structures, near emission wavelength 400nm；First top covering 4,
Second top covering 5, the 3rd top covering 6 are all Al0.1Ga0.9N materials；Contact layer 7 is the heavy doping GaN of 100nm.
In preparation method, it is to substitute wet etching using dry etching, removes 7 both sides of contact layer beyond the first bar chart
Part, depth until the 3rd top covering 6 bottom surface, expose the second top covering 5, formed the first vallate 8.Using dry etching,
5 two side portions of the second top covering beyond the second bar chart are removed, form the second vallate 9.
Claims (6)
1. a kind of ladder ridge semiconductor laser, including set gradually from bottom to up substrate, under-clad layer, active area, first
Top covering, the second top covering, the 3rd top covering and contact layer, it is characterized in that：The thickness of 3rd top covering is more than on second
The thickness of covering, the contact layer and the 3rd top covering form the first vallate, and second top covering forms the second vallate, described
The width of second vallate is more than the width of the first vallate.
2. ladder ridge semiconductor laser according to claim 1, it is characterized in that, the thickness of first top covering is
100-300nm。
3. ladder ridge semiconductor laser according to claim 1, it is characterized in that, the thickness of second top covering is
300-500nm, the thickness 700-900nm of the 3rd top covering；The overall thickness of second top covering and the 3rd top covering is 1000-
1200nm。
4. ladder ridge semiconductor laser according to claim 1, it is characterized in that, the width of first vallate is 20-
50μm。
5. ladder ridge semiconductor laser according to claim 1, it is characterized in that, the width of second vallate is than first
The width of vallate is 20-50 μm big.
6. the preparation method of ladder ridge semiconductor laser described in a kind of claim 1, it is characterized in that, comprise the following steps：
（1）Grow under-clad layer, active area, the first top covering, the second top covering, the 3rd top covering and contact successively on substrate
Layer；
（2）One layer of photoresist of uniform fold on the contact layer, by graph exposure, surface leaves and the first vallate on the contact layer
First bar chart of equivalent width；
（3）Using wet etching or dry etch process, the region beyond the first bar chart on contact layer is removed, depth is extremely
The second top covering upper surface is simultaneously exposed in 3rd top covering bottom surface, forms the first vallate；
（4）Contact layer photomask surface glue is removed, then covers one layer of photoresist in entire upper surface again, and passes through graph exposure
The second bar chart with the second vallate equivalent width is left on the second top covering of the first vallate upper surface and exposing；
（5）Using wet etching or dry etch process, the second top covering two side portions are removed, form the second vallate, removal
Photomask surface glue.
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| CN201611049179.5A CN108092131A (en) | 2016-11-22 | 2016-11-22 | A kind of ladder ridge semiconductor laser and preparation method thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11354882A (en) * | 1998-06-08 | 1999-12-24 | Fuji Photo Film Co Ltd | Semiconductor laser and its manufacturing method |
| CN1617364A (en) * | 2003-10-17 | 2005-05-18 | 三星电子株式会社 | GaN-based semiconductor device and method of manufacturing the same |
| US20080157059A1 (en) * | 2006-12-27 | 2008-07-03 | Fujitsu Limited | Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method |
| CN102484184A (en) * | 2009-06-26 | 2012-05-30 | 萨里大学 | Light emitting semiconductor device |
| CN103503174A (en) * | 2011-05-02 | 2014-01-08 | 松下电器产业株式会社 | Super-luminescent diode |
| JP2014090090A (en) * | 2012-10-30 | 2014-05-15 | Sumitomo Electric Ind Ltd | Group iii nitride semiconductor laser element and group iii nitride semiconductor laser element manufacturing method |
| CN206195152U (en) * | 2016-11-22 | 2017-05-24 | 山东华光光电子股份有限公司 | Ladder ridge semiconductor laser |
-
2016
- 2016-11-22 CN CN201611049179.5A patent/CN108092131A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11354882A (en) * | 1998-06-08 | 1999-12-24 | Fuji Photo Film Co Ltd | Semiconductor laser and its manufacturing method |
| CN1617364A (en) * | 2003-10-17 | 2005-05-18 | 三星电子株式会社 | GaN-based semiconductor device and method of manufacturing the same |
| US20080157059A1 (en) * | 2006-12-27 | 2008-07-03 | Fujitsu Limited | Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method |
| CN102484184A (en) * | 2009-06-26 | 2012-05-30 | 萨里大学 | Light emitting semiconductor device |
| CN103503174A (en) * | 2011-05-02 | 2014-01-08 | 松下电器产业株式会社 | Super-luminescent diode |
| JP2014090090A (en) * | 2012-10-30 | 2014-05-15 | Sumitomo Electric Ind Ltd | Group iii nitride semiconductor laser element and group iii nitride semiconductor laser element manufacturing method |
| CN206195152U (en) * | 2016-11-22 | 2017-05-24 | 山东华光光电子股份有限公司 | Ladder ridge semiconductor laser |
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Application publication date: 20180529 |