CN108336641A - A kind of graph substrate semiconductor laser and preparation method thereof - Google Patents
A kind of graph substrate semiconductor laser and preparation method thereof Download PDFInfo
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- CN108336641A CN108336641A CN201710040684.1A CN201710040684A CN108336641A CN 108336641 A CN108336641 A CN 108336641A CN 201710040684 A CN201710040684 A CN 201710040684A CN 108336641 A CN108336641 A CN 108336641A
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- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- General Physics & Mathematics (AREA)
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- Semiconductor Lasers (AREA)
Abstract
A kind of graph substrate semiconductor laser, including substrate, under-clad layer, active layer, top covering and the contact layer set gradually from bottom to up, substrate is placed with bucking ladder on under-clad layer contact surface, it is provided with insulating layer above contact layer, insulating layer upper surface is provided with top electrode, and substrate lower surface is provided with lower electrode.The step of preparation method includes：（1）Grow under-clad layer, active layer, top covering and contact layer successively in the graph substrate for be placed with bucking ladder；（2）Side's growth insulating layer on the contact layer；（3）Strip current injection area is formed on insulating film；（4）The organic semiconductor device back side；Top electrode is deposited in surface on the insulating layer, the electrode in the case where substrate lower surface is deposited；（5）It is cleaved into a bar item；（6）It is cleaved into tube core.The present invention can form lateral refractive index waveguide, reduce threshold current, and can form non-absorbing window, improve Cavity surface COD power；The chip processing procedure for simplifying semiconductor laser, reduces production cost.
Description
Technical field
The present invention relates to a kind of graph substrate semiconductor lasers and preparation method thereof, belong to the technology of semiconductor laser
Field.
Background technology
The transverse mode of semiconductor laser is the light distribution for describing somewhere on output beam axis, also referred to as far-field distribution,
It is exactly the hot spot of laser for popular.Edge-emission semiconductor laser has not rounded symmetrical waveguiding structure.Vertical heterogeneous
Junction plane direction forms index waveguide by hetero-junctions, can be very good limitation light field, and hetero-junctions active layer is than relatively thin, energy
Ensure to work in single transverse mode.In parallel hetero-junctions in-plane, there are gain waveguide, weak index waveguide and strong refraction rate waveguide,
And item is wide general wider, acquires a certain degree of difficulty to the limitation and steady operation of lateral mode.Gain waveguide and weak index waveguide
It is not strong to the restriction effect of light, and influenced by operating temperature and electric current, it is easy to happen the saltus step of optical mode, so in high speed
Strong refraction rate waveguiding structure is commonly used in modulation device.
Document Electronics Letters, Vol.36 (2000), pp.1284 report a kind of real refraction of Low threshold
Rate guides 650nm lasers, using AlInP as laterally limiting layer is buried, improves light restriction factor, reduces threshold current
Density has good optical mode stability and reliability.This document is exactly to have used strong refraction rate waveguide on laterally limiting,
Lateral light limitation is enhanced, therefore laser has excellent photoelectric properties.United States Patent (USP) US6304587B1 discloses one kind and covers
Bury ridge type semiconductor laser, using no aluminium GaInP materials as laterally limiting, be easy to grow, stable cross can be obtained
Mould exports.But these buried structures must use multiple extension that could realize, increase the complexity of technique, reduce simultaneously
The output capacity of chip, improves chip cost, is not suitable for the mass production of laser.
The luminous zone area of semiconductor laser is smaller, and when high-power operation, it is close that Cavity surface needs bear very high luminous power
Degree, to Cavity surface to combat a natural disaster degenerative lesion (COD) Capability Requirement very high.Improve semiconductor laser COD method it is general there are two types of,
First, a floor height band gap material is grown at Cavity surface, still an alternative is that the method using quantum well mixing is direct at Cavity surface
Non-absorbing window is formed, both methods can weaken absorption of the Cavity surface to light, to improve the COD power of Cavity surface.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,VOL.1(1995),
Pp.728 describes a kind of AlGaInP semiconductor lasers of growth chamber face-port mouth.It is put into after bar cleavage raw in MOCVD chambers
The AlGaInP materials of a long floor height band gap reduce the absorption of Cavity surface so that COD power improves twice, obtains high power and height can
By the semiconductor laser of property.The but bar very little after cleavage, needs high-precision fixture and suitable pallet that could realize
The growth of material does not have very strong operability.
Invention content
A kind of figure that Cavity surface COD power is high is provided for deficiency, the present invention existing for existing semiconductor laser technology
Substrate semiconductor laser, while a kind of preparation method of the semiconductor laser being provided.
The graph substrate semiconductor laser of the present invention, using following technical scheme：
The graph substrate semiconductor laser, including the substrate, under-clad layer, active layer, the upper packet that set gradually from bottom to up
Layer and contact layer, substrate with bucking ladder is placed on under-clad layer contact surface, bucking ladder is transversely parallel to the cleavage surface of substrate, ladder
The longitudinally perpendicular cleavage surface in substrate of shape platform, and cleavage surface is the Cavity surface of semiconductor laser；It is provided with insulation above contact layer
Layer, insulating layer upper surface are provided with top electrode, and substrate lower surface is provided with lower electrode.
The lateral cross section of the bucking ladder and longitudinal cross-section are all isosceles trapezoid, and lower base angle is 30-60 degree；Under bucking ladder
Bottom surface lateral length is 5-100 μm, and longitudinal length is 300-1500 μm, and the height of bucking ladder is 0.2-0.5 μm.
The lateral period that the bucking ladder is arranged on substrate is 200-500 μm, and longitudinal period is 350-1550 μm.
The under-clad layer contacts closely with graph substrate, and the under-clad layer of bucking ladder corner cannot be broken.
The thickness of the active layer is 0.1-0.3 μm, and less than the height of the bucking ladder.
The refractive index of the under-clad layer and top covering is less than the refractive index of active layer, the band gap of the under-clad layer and top covering
Higher than the band gap of active layer.
The advantage designed herein is that the luminous zone active layer above bucking ladder is with the active layer of bucking ladder both sides vertical
It can be staggered on substrate direction so that the luminous zone active layer surrounding above bucking ladder is the top covering of low-refraction high band gap.
The preparation method of above-mentioned graph substrate semiconductor laser, specific steps include：
(1) graph substrate is put into vapour epitaxial furnace, using the method for vapour phase epitaxy in graph substrate extension successively
Grow under-clad layer, active layer, top covering and contact layer；
(2) side grows a layer insulating on the contact layer；
(3) utilize the method for photoetching to form strip current injection area on insulating film, current injection area size and location and
The bucking ladder upper surface of graph substrate is consistent.
(4) the organic semiconductor device back side is to 80-120 μm, and top electrode is deposited in surface on the insulating layer, in the case where substrate lower surface is deposited
Electrode, and carry out alloy.
(5) long as tube core chamber using the longitudinal arrangement period of the bucking ladder of graph substrate, it is cleaved into a bar item, carries out Cavity surface plating
Film.
(6) using lateral arrangement period as the tube core period of the bucking ladder of graph substrate, it is cleaved into tube core, forms semiconductor
Laser.
The present invention uses graph substrate, has the characteristics that：
1. luminous zone active layer surrounding is the top covering of low-refraction high band gap, lateral refractive index waveguide can be formed,
Threshold current is reduced, and non-absorbing window can be formed, improves Cavity surface COD power.
2. only needing once to be lithographically formed current injection area after epitaxial growth, the chip system of semiconductor laser is simplified
Journey reduces production cost, is suitble to the production of mass.
3. need not be performed etching to epitaxial layer after epitaxial growth, it not will produce the waste material of epitaxial material, avoid environment
Pollution, reduces the cost of waste recovery.
Description of the drawings
Fig. 1 is the transverse sectional view of graph substrate semiconductor laser of the present invention.
Fig. 2 is the longitudinal cross-section schematic diagram of graph substrate semiconductor laser of the present invention.
Fig. 3 is the structural schematic diagram of substrate in the present invention.
Fig. 4 is the transverse sectional view of substrate in the present invention.
Fig. 5 is the longitudinal cross-section schematic diagram of substrate in the present invention.
In figure：1, substrate, 2, under-clad layer, 3, active layer, 4, top covering, 5, contact layer, 6, insulating layer, 7, upper electrode layer,
8, lower electrode layer, 9, luminous zone, 10, bucking ladder.
Specific implementation mode
The graph substrate semiconductor laser of the present invention, such as Fig. 1 and Fig. 2, including set gradually from bottom to up substrate 1,
Under-clad layer 2, active layer 3, top covering 4 and contact layer 5.Wherein, substrate 1 is GaAs (100) single-chip.The material of substrate 1 also may be used
To be InP, GaN, Al2O3, SiC or Si.Insulating layer 6 is provided on contact layer 5, the upper surface of insulating layer 6 is provided with upper electrode layer
7, the bottom surface of substrate 1 is provided with lower electrode layer 8.
As shown in figure 3, the bucking ladder 10 to raise up is distributed on the surface that substrate 1 is contacted with under-clad layer 2.Referring to Fig. 4
And Fig. 5, the transverse direction (being equivalent to the direction on positioning side in 1 bottom side of substrate in Fig. 3, Fig. 4 is in the section that this side up) of bucking ladder 10
It is parallel to the cleavage surface (110) of substrate 1, the longitudinal direction of bucking ladder 10 (it is equivalent to the vertical direction on positioning side in 1 bottom side of substrate in Fig. 3,
Fig. 5 is in the section that this side up) perpendicular to the cleavage surface (110) of substrate 1.
The lateral cross section of bucking ladder 10 and longitudinal cross-section are all isosceles trapezoid, and lower base angle value is 30-60 degree.Bucking ladder 10
Bottom surface lateral length be 5-100 μm, longitudinal length be 300-1500 μm.The height of bucking ladder 10 is 0.2-0.5 μm.
The lateral period that bucking ladder 10 is arranged on substrate 1 is 200-500 μm, and longitudinal period is 350-1550 μm.
Under-clad layer 2 and top covering 4 are Al0.5In0.5P, band gap 2.3eV, refractive index 3.2.Under-clad layer 2 connects with substrate 1
It touches closely, the under-clad layer 2 of bucking ladder corner cannot be broken.
Active layer 3 is (Al0.5Ga0.5)0.5In0.5P/Ga0.5In0.5P quantum well structures, overall thickness is 0.1-0.3 μm, and is wanted
Less than the height of the bucking ladder.Quantum Well Ga0.5In0.5The band gap of P is 1.9eV, refractive index 3.6.
The refractive index of under-clad layer 2 and top covering 4 is less than the refractive index of active layer 3.The band gap of under-clad layer 2 and top covering 4 is high
In the band gap of active layer 3.
As depicted in figs. 1 and 2,9 surrounding of luminous zone caused by active layer 3 is coated by top covering 4.Al0.5In0.5P with
Ga0.5In0.5The refringence of P is 0.4, forms strong refraction rate waveguiding structure, can be very good limitation laser lateral mode, drop
Low threshold current.Al0.5In0.5P and Ga0.5In0.5The difference in band gap of P is 0.4eV, Quantum Well Ga0.5In0.5The laser that P is sent out will not
By Al0.5In0.5P materials absorb, and are formed a non-absorbing window at Cavity surface, improve COD power.
The preparation process of above-mentioned graph substrate semiconductor laser is：
(1) substrate 1 for being placed with bucking ladder 10 is put into vapour epitaxial furnace, successively epitaxial growth under-clad layer 2, active layer
3, the contact layer 5 of top covering 4；
(2) layer insulating 6 is grown above contact layer 5；
(3) utilize the method for photoetching to form strip current injection area on insulating layer 6, current injection area size and location and
The bucking ladder upper surface arranged on substrate 1 is consistent.
(4) upper electrode layer is deposited in 6 upper surface of insulating layer until the thickness of substrate 1 is 80-120 μm in 1 back side of organic semiconductor device
7, lower electrode layer 8 is deposited in the lower surface of substrate 1, and carry out alloy.
(5) long as tube core chamber using the longitudinal arrangement period of 1 upper trapezoid platform of substrate, it is cleaved into a bar item, carries out cavity surface film coating.
(6) using lateral arrangement period as the tube core period of 1 upper trapezoid platform of substrate, it is cleaved into tube core, semiconductor is formed and swashs
Light device.The lateral cross section of semiconductor laser is as shown in Figure 1, longitudinal cross-section is as shown in Figure 2.
Claims (7)
1. a kind of graph substrate semiconductor laser, including the substrate, under-clad layer, active layer, the upper packet that set gradually from bottom to up
Layer and contact layer, it is characterized in that：Substrate with bucking ladder is placed on under-clad layer contact surface, bucking ladder is transversely parallel to substrate
Cleavage surface, the longitudinally perpendicular cleavage surface in substrate of bucking ladder, and cleavage surface is the Cavity surface of semiconductor laser；It is set above contact layer
It is equipped with insulating layer, insulating layer upper surface is provided with top electrode, and substrate lower surface is provided with lower electrode.
2. a kind of graph substrate semiconductor laser as described in claim 1, it is characterized in that：The lateral cross section of the bucking ladder
All it is isosceles trapezoid with longitudinal cross-section, lower base angle is 30-60 degree；The bottom surface lateral length of bucking ladder is 5-100 μm, Zong Xiangchang
Degree is 300-1500 μm, and the height of bucking ladder is 0.2-0.5 μm.
3. a kind of graph substrate semiconductor laser as described in claim 1, it is characterized in that：The bucking ladder is arranged on substrate
The lateral period of cloth is 200-500 μm, and longitudinal period is 350-1550 μm.
4. a kind of graph substrate semiconductor laser as described in claim 1, it is characterized in that：The thickness of the active layer is
0.1-0.3 μm, and less than the height of the bucking ladder.
5. a kind of graph substrate semiconductor laser as described in claim 1, it is characterized in that：The under-clad layer and top covering
Refractive index is less than the refractive index of active layer.
6. a kind of graph substrate semiconductor laser as described in claim 1, it is characterized in that：The under-clad layer and top covering
Band gap is higher than the band gap of active layer.
7. the preparation method of graph substrate semiconductor laser described in a kind of claim 1, characterized in that include the following steps：
(1) graph substrate is put into vapour epitaxial furnace, the epitaxial growth successively in graph substrate using the method for vapour phase epitaxy
Under-clad layer, active layer, top covering and contact layer；
(2) side grows a layer insulating on the contact layer；
(3) method of photoetching is utilized to form strip current injection area, current injection area size and location and figure on insulating film
The bucking ladder upper surface of substrate is consistent.
(4) the organic semiconductor device back side is to 80-120 μm, and top electrode is deposited in surface on the insulating layer, the electricity in the case where substrate lower surface is deposited
Pole, and carry out alloy.
(5) long as tube core chamber using the longitudinal arrangement period of the bucking ladder of graph substrate, it is cleaved into a bar item, carries out cavity surface film coating.
(6) using lateral arrangement period as the tube core period of the bucking ladder of graph substrate, it is cleaved into tube core, forms semiconductor laser
Device.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111092366A (en) * | 2018-10-23 | 2020-05-01 | 山东华光光电子股份有限公司 | Semiconductor laser with double-sided current limiting structure and preparation method |
| CN112688165A (en) * | 2020-12-25 | 2021-04-20 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser capable of reducing threshold current and preparation method thereof |
| CN112713506A (en) * | 2020-12-25 | 2021-04-27 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser and preparation method thereof |
| CN114497310A (en) * | 2022-04-15 | 2022-05-13 | 苏州长光华芯光电技术股份有限公司 | Lateral optical mode control high-power semiconductor device and preparation method thereof |
| CN115207775A (en) * | 2022-09-15 | 2022-10-18 | 日照市艾锐光电科技有限公司 | Semiconductor laser based on channel waveguide substrate and preparation method thereof |
| CN115347457A (en) * | 2022-08-24 | 2022-11-15 | 全磊光电股份有限公司 | Semiconductor laser and manufacturing method thereof |
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| CN1741329A (en) * | 2004-08-25 | 2006-03-01 | 中国科学院半导体研究所 | A kind of indium phosphide-base quantum cascade semiconductor laser and manufacture method |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111092366A (en) * | 2018-10-23 | 2020-05-01 | 山东华光光电子股份有限公司 | Semiconductor laser with double-sided current limiting structure and preparation method |
| CN112688165A (en) * | 2020-12-25 | 2021-04-20 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser capable of reducing threshold current and preparation method thereof |
| CN112713506A (en) * | 2020-12-25 | 2021-04-27 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser and preparation method thereof |
| CN114497310A (en) * | 2022-04-15 | 2022-05-13 | 苏州长光华芯光电技术股份有限公司 | Lateral optical mode control high-power semiconductor device and preparation method thereof |
| WO2023198225A1 (en) * | 2022-04-15 | 2023-10-19 | 苏州长光华芯光电技术股份有限公司 | Lateral optical mode control high power semiconductor device and preparation method therefor |
| CN115347457A (en) * | 2022-08-24 | 2022-11-15 | 全磊光电股份有限公司 | Semiconductor laser and manufacturing method thereof |
| CN115207775A (en) * | 2022-09-15 | 2022-10-18 | 日照市艾锐光电科技有限公司 | Semiconductor laser based on channel waveguide substrate and preparation method thereof |
| CN115207775B (en) * | 2022-09-15 | 2023-10-13 | 日照市艾锐光电科技有限公司 | Semiconductor laser based on channel waveguide substrate and preparation method thereof |
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