CN108092127B - Voltage-reducing type electro-optical Q-switching structure and Q-switching method - Google Patents
Voltage-reducing type electro-optical Q-switching structure and Q-switching method Download PDFInfo
- Publication number
- CN108092127B CN108092127B CN201611012146.3A CN201611012146A CN108092127B CN 108092127 B CN108092127 B CN 108092127B CN 201611012146 A CN201611012146 A CN 201611012146A CN 108092127 B CN108092127 B CN 108092127B
- Authority
- CN
- China
- Prior art keywords
- electro
- wave plate
- optical
- voltage
- half wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention provides a voltage-reducing electro-optical Q-switching structure, which is technically characterized in that: YAG stick and coupling output mirror, insert half wave plate and Q-switching method between electro-optical crystal and polarizer, a voltage-dropping type electro-optical Q-switching method, insert half wave plate between electro-optical crystal and polarizer, add quarter wave voltage to electro-optical crystal, adjust the electro-optical crystal to make its Z-axis direction accord with laser oscillation direction, then rotate half wave plate, the linear polarization light comes and goes through the electro-optical crystal, pass through half wave plate again, the laser is in the high-loss closed state at this moment, after removing the modulating voltage on the electro-optical crystal suddenly, produce the laser output of the huge pulse; the polarization state in the cavity is changed by rotating the half wave plate, the structure is simplified, the stability is improved, the thickness of the wave plate relative to the electro-optic crystal is much smaller, and the optical path maladjustment caused by the optical path difference introduced when the Q crystal rotates is avoided.
Description
Technical Field
The invention relates to the technical field of laser photoelectron, in particular to a voltage-reducing type electro-optic Q-switching structure and a Q-switching method.
Background
In laser technology, electro-optical Q-switching is the most common way to achieve nanosecond pulsing, with active control. The method can obtain the giant pulse with narrow pulse width, good synchronization performance and stable output, and is widely applied to the fields of laser ranging, laser guidance and the like.
The electro-optical Q-switching mode in the prior art is to add a polaroid and a pockels crystal in a laser cavity, and the basic principle of the electro-optical Q-switching mode is to utilize the linear electro-optical effect of certain uniaxial crystals, such as potassium dihydrogen phosphate, and to change the polarization state of light beams in the crystals to realize the high-loss door closing state or the light-conducting door opening state of a resonant cavity, so that the electro-optical Q-switching mode plays a role of optical switching.
The electro-optical Q switch is divided into a voltage-reducing type and a voltage-boosting type. For the former, when a quarter-wave voltage is applied to an electro-optical crystal, the light path is in a 'door closing' state, and after the voltage is removed, the light path is conducted and changed into a 'door opening' state, so that giant pulse output is formed; the latter is the 'door closing' state when the electro-optical crystal is not applied with voltage, and the 'door opening' state when the electro-optical crystal is applied with quarter-wave voltage.
Fig. 1 shows a prior art back-pressure type Q-adjusting method. Firstly, the optical element is adjusted to ensure that the passing surface of the reflecting mirror, the polarizer and the electro-optical crystal is parallel to the end surface of the laser working substance, and the output of the static laser is strongest at the moment. A quarter-wave voltage is then applied to the electro-optic crystal, which is rotated to repeatedly fine tune the electro-optic crystal until its X, Y axis is parallel to the polarizer polarization direction. While the quarter-wave voltage is trimmed appropriately until the laser is completely unable to oscillate, indicating that the electro-optic switch is in the off state.
In the process of debugging the light path, the angle adjustment of the electro-optic crystal in the XYZ direction and the rotation adjustment of the XY plane are needed, an optimal position exists, the optimal turn-off effect can be achieved, and the pulse width is narrowest and the stability is high. In the experimental process, the electro-optic crystal needs five-dimensional adjustment, the design of the tool is higher, and the debugging personnel also have higher requirements.
Disclosure of Invention
The present invention is directed to solving the above problems, and provides a voltage-dropping electro-optical Q-switch structure and a Q-switch method.
A voltage-relief type electro-optic Q-switch structure comprises a reflector, an electro-optic crystal, a polarizer, a Nd-YAG rod and a coupling output mirror, wherein a half wave plate is inserted between the electro-optic crystal and the polarizer.
Further, the reflecting mirror is a total reflection mirror.
Further, the electro-optic crystal is a potassium dihydrogen phosphate electro-optic crystal.
A voltage-reducing electro-optical Q-switching method includes inserting half-wave plate between electro-optical crystal and polarizer, applying quarter-wave voltage to electro-optical crystal, regulating electro-optical crystal to make its Z-axis direction be consistent with laser oscillation direction, rotating half-wave plate to make the polarization direction of passed linearly polarized light always be 45 deg. with the fast axis direction of electro-optical crystal after voltage is applied, making linearly polarized light pass through electro-optical crystal back and forth, passing through half-wave plate again, making the polarization direction of linearly polarized light be perpendicular to the polarization direction before passing through half-wave plate, making laser be in high-loss off state, and when the modulation voltage on electro-optical crystal is suddenly removed, making oscillation light path be on to generate giant pulse laser output.
The invention has the advantages that:
1. the polarization state in the cavity is changed by rotating the half wave plate, the structure is simplified, and the stability is improved;
2. the thickness of the wave plate is much smaller than that of the electro-optic crystal, and the rotation of the electro-optic crystal is replaced by the rotation of the wave plate during Q adjustment, so that optical path maladjustment caused by optical path difference introduced during the rotation of the Q crystal is avoided;
3. the debugging difficulty is reduced, and the optical path loss is not increased basically.
Drawings
FIG. 1 is a schematic diagram illustrating a conventional decompression type Q-switching method;
FIG. 2 is a diagram of a titanium alloy porous structure prepared by a diffusion bonding method;
FIG. 3 is a schematic view of a process for rapidly forming a porous structure of a titanium alloy by electron beam or laser beam.
The labels in the figures are:
1. reflecting mirror
2. Electro-optic crystal
3. Half wave plate
4. Polarizer
5. Nd-YAG rod
6. An output mirror is coupled.
Detailed Description
In order that the invention may be more clearly understood, the following detailed description of the embodiments of the invention is given with reference to the accompanying drawings.
Example 1
As shown in FIGS. 2-3, the structure of Q-switch of voltage-dropping type electro-optic comprises a reflector 1, an electro-optic crystal 2, a polarizer 4, a Nd: YAG rod 5 and a coupling-out mirror 6, wherein a half wave plate 3 is inserted between the electro-optic crystal 2 and the polarizer 4.
A voltage-relief type electro-optic Q-switching method is characterized in that a half wave plate 3 is inserted between an electro-optic crystal 2 and a polarizer 4, quarter wave voltage is applied to the electro-optic crystal 2, the electro-optic crystal 2 is adjusted to enable the Z-axis direction to be consistent with the laser oscillation direction, then the half wave plate 3 is rotated, the fast axis of the half wave plate 3 always enables the polarization direction of linearly polarized light passing through to form an angle of 45 degrees with the fast axis direction of the electro-optic crystal 2 after voltage is applied, the linearly polarized light passes through the electro-optic crystal 2 in a reciprocating mode and passes through the half wave plate 3 again, the polarization direction of the linearly polarized light at the moment is perpendicular to the polarization direction before passing through the half wave plate 3, a laser is in a high-loss closed state, and when the modulation voltage on the electro-optic crystal 2 is suddenly removed, an oscillation light path.
Example 2
As shown in FIGS. 2-3, a voltage-relief type electro-optic Q-switch structure comprises a reflector 1, wherein the reflector 1 is a total reflection mirror and an electro-optic crystal 2, the electro-optic crystal 2 is a monopotassium phosphate electro-optic crystal, a polarizer 4, a Nd: YAG rod 5 and a coupling output mirror 6, and a half-wave plate 3 is inserted between the electro-optic crystal 2 and the polarizer 4.
A voltage-relief type electro-optic Q-switching method is characterized in that a half wave plate 3 is inserted between an electro-optic crystal 2 and a polarizer 4, quarter wave voltage is applied to the electro-optic crystal 2, the electro-optic crystal 2 is adjusted to enable the Z-axis direction to be consistent with the laser oscillation direction, then the half wave plate 3 is rotated, the fast axis of the half wave plate 3 always enables the polarization direction of linearly polarized light passing through to form an angle of 45 degrees with the fast axis direction of the electro-optic crystal 2 after voltage is applied, the linearly polarized light passes through the electro-optic crystal 2 in a reciprocating mode and passes through the half wave plate 3 again, the polarization direction of the linearly polarized light at the moment is perpendicular to the polarization direction before passing through the half wave plate 3, a laser is in a high-loss closed state, and when the modulation voltage on the electro-optic crystal 2 is suddenly removed, an oscillation light path.
The transmittance of the half wave plate 3 can reach more than 99 percent, so the loss caused by the transmittance can be almost ignored, the thickness of the half wave plate is much thinner than that of the electro-optical crystal 2, the change of the rotation of the half wave plate to the oscillation direction of laser is not large, the fast and slow axis directions of the electro-optical crystal 2 and the linear polarization direction are relatively unchanged, and the decompression type Q-switching engineering application is more convenient.
Example 3
As shown in FIGS. 1-3, the U-axis represents the fast axis direction of the half-wave plate 3, D represents the polarization direction of the light beam after passing through the polarizer 4 from the rod side, and the vector D after passing through the half-wave plate 3/By rotating the half wave plate 3, D can always be present/Electro-optical crystal 2X with direction vector energy and quarter-wave voltage/The axis forms an angle of 45 degrees, the vector direction of the light beam after passing through the monopotassium phosphate electro-optic crystal is D//The direction of the polarization vector after passing through the half-wave plate 3 again is D///At this time, D///The vector direction and the initial D direction linearly polarized light form 90 degrees, and the 'turn-off' is realized in the cavity, so that the stable pulse energy output is realized.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (1)
1. A voltage-reducing electro-optical Q-switching method is characterized in that: inserting a half wave plate between an electro-optical crystal and a polarizer, applying a quarter wave voltage to the electro-optical crystal, adjusting the electro-optical crystal to enable the Z-axis direction of the electro-optical crystal to be consistent with the laser oscillation direction, then rotating the half wave plate, enabling the fast axis of the half wave plate to always enable the polarization direction of linearly polarized light passing through to form an angle of 45 degrees with the fast axis direction of the electro-optical crystal after voltage is applied, enabling the linearly polarized light to pass back and forth through the electro-optical crystal and then pass through the half wave plate again, enabling the linearly polarized light to be vertical to the polarization direction before passing through the half wave plate, enabling a laser to be in a high-loss closed state, and enabling an oscillation light path to be conducted after modulation voltage on the electro-optical crystal is.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611012146.3A CN108092127B (en) | 2016-11-17 | 2016-11-17 | Voltage-reducing type electro-optical Q-switching structure and Q-switching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611012146.3A CN108092127B (en) | 2016-11-17 | 2016-11-17 | Voltage-reducing type electro-optical Q-switching structure and Q-switching method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108092127A CN108092127A (en) | 2018-05-29 |
CN108092127B true CN108092127B (en) | 2020-09-08 |
Family
ID=62168006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611012146.3A Active CN108092127B (en) | 2016-11-17 | 2016-11-17 | Voltage-reducing type electro-optical Q-switching structure and Q-switching method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108092127B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114552363B (en) * | 2021-12-29 | 2023-08-15 | 西南技术物理研究所 | Lithium niobate blocking voltage setting method of solid laser |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101119009A (en) * | 2006-07-31 | 2008-02-06 | 深圳市大族激光科技股份有限公司 | Method for generating third harmonic laser |
CN102570278A (en) * | 2012-02-23 | 2012-07-11 | 中国科学院光电研究院 | High-stability output device for periodically-modulated flat-topped pulse |
CN103018930A (en) * | 2012-11-25 | 2013-04-03 | 华中科技大学 | High-speed shutter device and application thereof |
CN103166102A (en) * | 2013-04-09 | 2013-06-19 | 中国科学院上海光学精密机械研究所 | Laser with low-voltage driven electro-optical crystal |
CN103259182A (en) * | 2013-04-26 | 2013-08-21 | 山东大学 | General electro-optical Q-switching switch and Q-switching laser for broadband passing through optical rotation crystal for single or odd times |
CN104242037A (en) * | 2014-10-16 | 2014-12-24 | 哈尔滨工业大学 | Method and device for obtaining pulse string laser through itracavity modulation |
CN204927799U (en) * | 2015-09-23 | 2015-12-30 | 中国工程物理研究院应用电子学研究所 | Long pulsed laser of high -energy obtains device |
CN105680315A (en) * | 2016-04-14 | 2016-06-15 | 北京工业大学 | Method for increasing average output power of electro-optic Q-switched laser |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090122818A1 (en) * | 2007-03-14 | 2009-05-14 | Nettleton John E | Electronic selectable two-color solid state laser |
US7760772B2 (en) * | 2008-10-16 | 2010-07-20 | Coherent, Inc. | Cavity-dumped pulsed solid-state laser with variable pulse-duration |
US8488635B2 (en) * | 2010-08-17 | 2013-07-16 | The United States Of America As Represented By The Secretary Of The Army | UV illumination for mitigation of cold temperature pyroelectric effects in lithium niobate |
CN102570271B (en) * | 2012-01-13 | 2014-10-01 | 北京国科世纪激光技术有限公司 | Period-modulated flat-topped pulse device for accurately controlling output power/energy |
CN204740410U (en) * | 2015-05-22 | 2015-11-04 | 江苏中科大港激光科技有限公司 | Lightning Q -switch and Q laser instrument is transferred to lightning of using thereof |
-
2016
- 2016-11-17 CN CN201611012146.3A patent/CN108092127B/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101119009A (en) * | 2006-07-31 | 2008-02-06 | 深圳市大族激光科技股份有限公司 | Method for generating third harmonic laser |
CN102570278A (en) * | 2012-02-23 | 2012-07-11 | 中国科学院光电研究院 | High-stability output device for periodically-modulated flat-topped pulse |
CN103018930A (en) * | 2012-11-25 | 2013-04-03 | 华中科技大学 | High-speed shutter device and application thereof |
CN103166102A (en) * | 2013-04-09 | 2013-06-19 | 中国科学院上海光学精密机械研究所 | Laser with low-voltage driven electro-optical crystal |
CN103259182A (en) * | 2013-04-26 | 2013-08-21 | 山东大学 | General electro-optical Q-switching switch and Q-switching laser for broadband passing through optical rotation crystal for single or odd times |
CN104242037A (en) * | 2014-10-16 | 2014-12-24 | 哈尔滨工业大学 | Method and device for obtaining pulse string laser through itracavity modulation |
CN204927799U (en) * | 2015-09-23 | 2015-12-30 | 中国工程物理研究院应用电子学研究所 | Long pulsed laser of high -energy obtains device |
CN105680315A (en) * | 2016-04-14 | 2016-06-15 | 北京工业大学 | Method for increasing average output power of electro-optic Q-switched laser |
Non-Patent Citations (2)
Title |
---|
Characteristic analysis of a polarization output coupling Porro prism resonator;Hailong Yang等;《SPIE》;20150210;第9255卷;第92553O-1~7页 * |
退压式La3Ga5SiO14晶体电光调QNd∶YAG激光器激光性能研究;张少军等;《光学学报》;20060531;第26卷(第5期);第689-692页 * |
Also Published As
Publication number | Publication date |
---|---|
CN108092127A (en) | 2018-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4276518A (en) | Optical oscillator | |
KR20060016129A (en) | Single-frequency laser peening method | |
WO1994027183A1 (en) | Frequency-converting laser system and power control therefor | |
CN108092127B (en) | Voltage-reducing type electro-optical Q-switching structure and Q-switching method | |
WO2021120487A1 (en) | Electro-optic q modulation intra-cavity frequency-doubling sub-nanosecond pulse green laser | |
CN108767650B (en) | Function composite electro-optical Q switch | |
CN109586153A (en) | Neodymium-doped lithium fluoride yttrium nanosecond pulse blue laser | |
CN114520459B (en) | Device and method for switching output of continuous orthogonal polarized laser | |
EP0105887A1 (en) | Pulse transmission or reflection mode laser | |
CN103166102A (en) | Laser with low-voltage driven electro-optical crystal | |
CN201075571Y (en) | Double impulse width output laser | |
CN109462138A (en) | A kind of Gao Zhongying short pulse infrared laser | |
US6064684A (en) | Unidirectionally operating laser apparatus using semimonolithic ring cavity | |
CN106025783A (en) | Q-switched pulse laser for quickly switching polarization states | |
JP3053943B2 (en) | Mode-locked lasers using nonlinear self-focusing elements. | |
CN210779491U (en) | Electro-optically Q-switched intracavity frequency doubling subnanosecond pulse green laser | |
CN102299469A (en) | Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic | |
Staupendahl | A Novel Q‐switched CO2 Laser and its Applications: Efficient generation of short pulses with peak powers up to 100 kW and high average power | |
US6546027B1 (en) | Laser saturable absorber and passive negative feedback elements, and method of producing energy output therefrom | |
CN110829172B (en) | Laser output method with repetition frequency 2 times electro-optic Q-switched frequency and laser | |
CN116191192A (en) | Laser with switchable Q-switching mode | |
CN105006737A (en) | Electro-optic and frequency multiplication function composite green laser based on rubidium titanyl phosphate crystals and working method thereof | |
CN113488841B (en) | Low-voltage independent pressurization type electro-optical Q switch | |
KR101596478B1 (en) | Multi-pulse width as the laser output of laser equipment | |
CN112467509B (en) | Thermally stable laser for airborne ranging and irradiation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20180717 Address after: 100024 North East military villa, eight Li bridge, Chaoyang District, Beijing Applicant after: China Institute of Aeronautical Manufacturing Technology Address before: 100024 North East military villa, eight Li bridge, Chaoyang District, Beijing Applicant before: Beijing Aviation Manufacturing Engineering Institute of China Aviation Industry Group Company |
|
GR01 | Patent grant | ||
GR01 | Patent grant |