CN108075028A - Vertical-type dual-colored LED chip - Google Patents
Vertical-type dual-colored LED chip Download PDFInfo
- Publication number
- CN108075028A CN108075028A CN201711383453.7A CN201711383453A CN108075028A CN 108075028 A CN108075028 A CN 108075028A CN 201711383453 A CN201711383453 A CN 201711383453A CN 108075028 A CN108075028 A CN 108075028A
- Authority
- CN
- China
- Prior art keywords
- vertical
- led chip
- green light
- blue light
- colored led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims description 18
- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 16
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to a kind of vertical-type dual-colored LED chip, including：The first metal layer 1030, second metal layer 1022, the 3rd metal layer 1021, the 4th metal layer 1020 being cascading, the blue light structure 10 and the green light structure 20 are arranged on the 4th metal layer 1020, and the blue light structure 10 and the green light structure 20 are isolated by oxidization isolation layer 12.Beneficial effects of the present invention are：1st, the dosage of vertical-type dual-colored LED chip fluorescent powder of the invention is few, improve because the fluorescent powder grain of largely discrete distributions light is caused to die down the problem of；2nd, vertical-type dual-colored LED chip integration of the invention is high, low manufacture cost；3rd, the adjusting of vertical-type dual-colored LED chip colour temperature of the invention is more flexible.
Description
Technical field
The invention belongs to LED chip technical fields, and in particular to a kind of vertical-type dual-colored LED chip.
Background technology
The appearance of LED lamp, greatly reduces the required electric power of illumination, the LED light of similary wattage, and required electric power only has
The 1/10 of incandescent lamp bulb, while LED has many advantages, such as long lifespan, environmental protection, non-maintaining, the rapid position for substituting incandescent lamp.
On process structure, two methods of white light LEDs generally use are formed, the first is to utilize " Blue-Ray technology " and fluorescence
Powder cooperatively forms white light；But usually because there are a large amount of discrete distributions in this technique using fluorescent powder in fluorescent powder glue-line
Fluorescent powder grain, light, which incides into, is present with strong scattering phenomenon in fluorescent powder glue-line.On the one hand this scattering enhances
On the other hand fluorescent powder glue-line also causes a large amount of light to be reflected, i.e. the light transmitted through phosphor powder layer the absorption of light
Line can substantially reduce, poor so as to cause the heat dissipation effect of chip.It is for second a variety of monochromatic light mixed methods, this multi-chip
Hybrid technology is there are poor reliability, the problem of encapsulation difficulty is big.
Therefore, how to develop a kind of white light single chip process becomes the hot issue of LED chip technical field.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of vertical-type dual-colored LED chips.This
Technical problems to be solved by the inivention are achieved through the following technical solutions：
An embodiment of the present invention provides a kind of vertical-type dual-colored LED chip, including：The first metal layer being cascading
1030th, second metal layer 1022, the 3rd metal layer 1021, the 4th metal layer 1020, the blue light structure 10 and the green light knot
Structure 20 is arranged on the 4th metal layer 1020, and the blue light structure 10 and the green light structure 20 pass through oxidization isolation layer 12
Isolated.
In one embodiment of the invention, the first top electrode 51, the second top electrode 52, lower electrode 53 are further included, wherein,
First top electrode 51 is arranged in the blue light structure 10, and second top electrode 52 is arranged at the green light structure 20
On, the lower electrode 53 is located at 1030 bottom of the first metal layer.
In one embodiment of the invention, the cross section of the blue light structure 10 and the green light structure 20 is square
Shape.
In one embodiment of the invention, the length of the rectangle and it is wide be 100 microns.
In one embodiment of the invention, the blue light structure 10 includes the blue light GaN buffer layers being cascading
101st, blue light GaN stabilized zones 102, blue light n-type GaN layer 103, blue light InGaN/GaN multi-quantum pit structures 104, blue light p-type
AlGaN barrier layers 105, blue light p-type GaN layer 106.
In one embodiment of the invention, the green light structure 20 includes the green light GaN buffer layers being cascading
201st, green light GaN stabilized zones 202, green light n-type GaN layer 203, green light active layer 204, green light p-type AlGaN barrier layers 205, green light
P-type GaN layer 206.
In one embodiment of the invention, the thickness of the 3rd metal layer 1021 is 300nm-1500nm.
In one embodiment of the invention, the thickness of the second metal layer 1022 is 500nm-2500nm.
In one embodiment of the invention, the material of the oxidization isolation layer 12 is SiO2。
In one embodiment of the invention, the second metal layer 1022 and the material phase of the 3rd metal layer 1021
Together.
Compared with prior art, beneficial effects of the present invention：
1st, the dosage of vertical-type dual-colored LED chip fluorescent powder of the invention is few, improves because of the fluorescence of a large amount of discrete distributions
The problem of powder particles cause light to die down；
2nd, vertical-type dual-colored LED chip integration of the invention is high, low manufacture cost；
3rd, the adjusting of vertical-type dual-colored LED chip colour temperature of the invention is more flexible.
Description of the drawings
Fig. 1 is a kind of structure diagram of vertical-type dual-colored LED chip provided in an embodiment of the present invention；
Fig. 2 is a kind of structure diagram of the blue light structure 10 of vertical-type dual-colored LED chip provided in an embodiment of the present invention；
Fig. 3 is a kind of blue light InGaN/GaN multiple quantum wells knots of vertical-type dual-colored LED chip provided in an embodiment of the present invention
The structure diagram of structure；
Fig. 4 is a kind of structure diagram of the green light wick slot of vertical-type dual-colored LED chip provided in an embodiment of the present invention；
Fig. 5 is a kind of structure diagram of the green light structure 20 of vertical-type dual-colored LED chip provided in an embodiment of the present invention；
Fig. 6 is a kind of green light InGaN/GaN multiple quantum wells knots of vertical-type dual-colored LED chip provided in an embodiment of the present invention
The structure diagram of structure；
Fig. 7 is a kind of structure diagram of the bonded layer of vertical-type dual-colored LED chip provided in an embodiment of the present invention；
Fig. 8 is a kind of overlooking the structure diagram of vertical-type dual-colored LED chip provided in an embodiment of the present invention；
Fig. 9 is a kind of side structure schematic view of vertical-type dual-colored LED chip provided in an embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is a kind of structure diagram of vertical-type dual-colored LED chip provided in an embodiment of the present invention；The vertical-type is double-colored
LED chip includes：
The first metal layer 1030, second metal layer 1022, the 3rd metal layer 1021, the 4th metal layer being cascading
1020, the blue light structure 10 and the green light structure 20 are arranged on the 4th metal layer 1020, the blue light structure 10
Isolated with the green light structure 20 by oxidization isolation layer 12.
Compared with prior art, the advantageous effect of the embodiment of the present invention：
1st, vertical-type dual-colored LED chip of the invention is because be simultaneously emitted by blue light and green light, therefore the dosage of fluorescent powder is few,
Improve because the fluorescent powder grain of a large amount of discrete distributions light is caused to die down the problem of；
2nd, vertical-type dual-colored LED chip integration of the invention is high, low manufacture cost.
Embodiment two
For the present embodiment on the basis of above-described embodiment, a kind of vertical-type dual-colored LED chip is described in detail in emphasis.
Specifically, which includes：The first metal layer 1030 that is cascading, second metal layer 1022, the 3rd metal layer 1021,
4th metal layer 1020, the blue light structure 10 and the green light structure 20 are arranged on the 4th metal layer 1020, described
Blue light structure 10 and the green light structure 20 are isolated by oxidization isolation layer 12.
Further, the first top electrode 51, the second top electrode 52, lower electrode 53 are further included, wherein, first top electrode
51 are arranged in the blue light structure 10, and second top electrode 52 is arranged in the green light structure 20, the lower electrode 53
Positioned at 1030 bottom of the first metal layer.
Wherein, the blue light structure 10 and 20 cross section of green light structure are rectangle.
Preferably, the length of the rectangle and it is wide be 100 microns.
Wherein, the blue light structure 10 includes the blue light GaN buffer layers 101, the blue light GaN stabilized zones that are cascading
102nd, blue light n-type GaN layer 103, blue light InGaN/GaN multi-quantum pit structures 104, blue light p-type AlGaN barrier layers 105, blue light p
Type GaN layer 106.
Wherein, the green light structure 20 includes the green light GaN buffer layers 201, the green light GaN stabilized zones that are cascading
202nd, green light n-type GaN layer 203, green light active layer 204, green light p-type AlGaN barrier layers 205, green light p-type GaN layer 206.
Wherein, the thickness of the 3rd metal layer 1021 is 300nm-1500nm.
Wherein, the thickness of the second metal layer 1022 is 500nm-2500nm.
Wherein, the material of the oxidization isolation layer 12 is SiO2。
Wherein, the second metal layer 1022 and the material identical of the 3rd metal layer 1021.
Compared with prior art, the advantageous effect of the embodiment of the present invention：
1st, vertical-type dual-colored LED chip of the invention is because be simultaneously emitted by blue light and green light, therefore the dosage of fluorescent powder is few,
Improve because the fluorescent powder grain of a large amount of discrete distributions light is caused to die down the problem of；
2nd, vertical-type dual-colored LED chip integration of the invention is high, low manufacture cost.
3rd, the adjusting of vertical-type dual-colored LED chip colour temperature of the invention is more flexible.
Embodiment three
The present embodiment is on the basis of above-described embodiment, and emphasis is to a kind of vertical-type dual-colored LED core in above-described embodiment
The preparation method of piece is described in detail.Specifically, include the following steps：
S01：Make substrate 11.11 material of substrate is sapphire or SiC.
S02：Blue light structure 10 is grown on the substrate 11.Fig. 2 is referred to, Fig. 2 is provided in an embodiment of the present invention a kind of vertical
The structure diagram of the blue light structure 10 of straight type dual-colored LED chip；Specifically comprise the following steps：
S021：Growth thickness is the blue light GaN buffer layers 101 of 3000~5000nm in the Sapphire Substrate 11, raw
Long temperature is 400~600 DEG C, wherein, 101 preferred thickness of blue light GaN buffer layers is 4000nm, and optimal growth temperature is 500
℃。
S022：900-1050 DEG C is warming up to, is 500~1500nm in the 101 surface growth thickness of blue light GaN buffer layers
Blue light GaN stabilized zones 102, wherein, 102 preferred thickness of blue light GaN stabilized zones be 1000nm, optimal growth temperature be 1000
℃。
S023：It keeps temperature-resistant, mixes Si in the 102 surface growth thickness of blue light GaN stabilized zones for 200~1000nm
Blue light n-type GaN layer 103, doping concentration be 1 × 1018cm-3~5 × 1019cm-3.Wherein, blue light n-type GaN layer 103 is preferred raw
Long thickness is 400nm, and optimal growth temperature is 1000 DEG C, and optimal doping concentration is 1 × 1019cm-3。
S024：On 103 surface of blue light n-type GaN layer, growth blue light InGaN/GaN multi-quantum pit structures have as first
Active layer 104.Fig. 3 is referred to, Fig. 3 is a kind of blue light InGaN/GaN of vertical-type dual-colored LED chip provided in an embodiment of the present invention
The structure diagram of multi-quantum pit structure.Wherein, the growth temperature of blue light InGaN quantum well layers 104b is 650 DEG C~750 DEG C,
The growth temperature of blue light GaN barrier layers 104a is 750 DEG C~850 DEG C；The Quantum Well cycle is 8~30, blue light InGaN quantum well layers
The thickness of 104b is 1.5~3.5nm, and wherein the content of In is 10%~20%, and content is determined according to optical wavelength, and content gets over bloom
Ripple wavelength is longer；The thickness of blue light GaN barrier layers 104a is 5~10nm.Wherein, blue light InGaN quantum well layers 104b's is preferred
Growth temperature is 750 DEG C, preferred thickness 2.8nm；The preferred growth temperature of blue light GaN barrier layers 104a is 850 DEG C, preferably thick
It spends for 5nm.The Quantum Well cycle is preferably 20.
S025：The blue light p-type AlGaN stops of Mg are mixed for 10~40nm in the 104 surface growth thickness of blue light active layer
Layer 105, growth temperature are 850~950 DEG C.Wherein, 105 preferred thickness of blue light p-type AlGaN barrier layers is 20nm, most eugenic
Long temperature is 900 DEG C.
S026：In the blue light p-type GaN that the 105 surface growth thickness of blue light p-type AlGaN barrier layers is 100~300nm
Layer 106, as blue light contact layer.Wherein, 106 preferred thickness of blue light p-type GaN layer is 200nm, and optimal growth temperature is 900
℃。
S03：Green light wick slot is prepared over the substrate and green light structure 20 is grown in the green light wick slot；It please join
See Fig. 4 and Fig. 5, Fig. 4 is a kind of structural representation of the green light wick slot of vertical-type dual-colored LED chip provided in an embodiment of the present invention
Figure；Fig. 5 is a kind of structure diagram of the green light structure 20 of vertical-type dual-colored LED chip provided in an embodiment of the present invention；
S031：In 106 surface deposition of blue light p-type GaN layer, one layer of first oxide layer, it is preferable that the first oxide layer material
Expect for SiO2, thickness is 300~800nm.First oxidated layer thickness optimal value is 500nm；
S032：Using wet-etching technology, etching is one long in first oxide layer is more than 50 μm, less than 300 μm,
It is wider than 50 μm, the rectangular window less than 300 μm；The long optimal value of rectangular window is 100 μm, and wide optimal value is 100 μm；
S033：Using dry etch process, the layer material of the rectangular window is etched, until the substrate 11 is to form
Green light wick groove.
S034：Remove the first oxide layer described in surface, in redeposited one layer of second oxidation of the blue light p-type GaN layer 106
Layer.Preferably, the second oxide layer materials are SiO2, thickness is 20~100nm.Second oxidated layer thickness optimal value is 50nm.
S035：Utilize second oxide layer on 106 surface of blue light p-type GaN layer described in dry etching.It is recessed in the green light wick
Slot surrounding forms oxidization isolation layer 12.
S036：In the green light wick groove, growth thickness is the green light GaN buffer layers 201 of 3000~5000nm, raw
Long temperature is 400~500 DEG C.Wherein, 201 preferred thickness of green light GaN buffer layers is 4000nm, and optimal growth temperature is 500
℃。
S037：In the green light GaN stabilized zones that the 201 surface growth thickness of green light GaN buffer layers is 500~1500nm
202, growth temperature be 900~1050 DEG C, wherein, 202 preferred thickness of green light GaN stabilized zones be 1000nm, optimal growth temperature
It spends for 1000 DEG C.
S038：It keeps temperature-resistant, mixes Si in the 202 surface growth thickness of green light GaN stabilized zones for 200~1000nm
Green light n-type GaN layer 203, doping concentration be 1 × 1018cm-3~5 × 1019cm-3.Wherein, green light n-type GaN layer 203 is preferred raw
Long thickness is 400nm, and optimal growth temperature is 1000 DEG C, and optimal doping concentration is 1 × 1019cm-3。
S039：On 203 surface of green light n-type GaN layer, growth green light InGaN/GaN multi-quantum pit structures have as green light
Active layer 204.Fig. 6 is referred to, Fig. 6 is a kind of green light nGaN/GaN of vertical-type dual-colored LED chip provided in an embodiment of the present invention
The structure diagram of multi-quantum pit structure.Wherein the growth temperature of green light InGaN quantum well layers 204b is 650 DEG C~750 DEG C, green
The growth temperature of light GaN barrier layers 204a is 750 DEG C~850 DEG C；The green quantum trap cycle is 8~30, green light InGaN Quantum Well
The thickness of layer 204b is 1.5~3.5nm, and wherein the content of In is 20%~30%, and content is determined according to optical wavelength, and content is higher
Optical wavelength is longer；The thickness of green light GaN barrier layers 204a is 5~10nm.Wherein, green light InGaN quantum well layers 204b
Preferred growth temperature is 750 DEG C：Preferred thickness is 2.8nm；The preferred growth temperature of green light GaN barrier layers 204a is 850 DEG C, excellent
It is 5nm to select thickness.The Quantum Well cycle is preferably 20.
S0310：The green light p-type AlGaN barrier layers of Mg are mixed for 10~40nm in the green light active layer surface growth thickness
205, growth temperature is 850~950 DEG C.Wherein, 205 preferred thickness of green light p-type AlGaN barrier layers be 20nm, optimal growth
Temperature is 900 DEG C.
S0311：In the green light p-type GaN that the 205 surface growth thickness of green light p-type AlGaN barrier layers is 100~300nm
Layer 206, as green light contact layer.Wherein, 206 preferred thickness of green light p-type GaN layer is 200nm, and optimal growth temperature is 900
℃。
Green light GaN buffer layers 201, green light GaN stabilized zones 202, green light n-type GaN layer 203, green light active layer 204, green light p
Type AlGaN barrier layers 205, green light p-type GaN layer 206 form green light structure 20.
S04：Bonded layer is prepared in the blue light structure 10, the green light structure 20；Fig. 7 provides for the embodiment of the present invention
A kind of vertical-type dual-colored LED chip bonded layer structure diagram；Specifically comprise the following steps：
S041：Electricity is prepared using the method for sputtering or evaporation in the blue light structure 10 and 20 surface of green light structure
Pole layer 1020, material are Ni or Au or Ni/Au and its alloy with other metals, form electrode, thickness 100nm-
1000nm；
S042：The first metal layer 1021 is prepared on the electrode layer 1020；In electrode layer surface, using sputtering or steam
The method of hair prepares layer of Ni or the good metal or metal alloy of the reflectives such as Pb or Ni/Pb alloys or Al (aluminium)
Prepare the first metal layer 1021, thickness 300nm-1500nm；
S043：It chooses sheet metal 1030 and second metal layer 1022 is prepared on the sheet metal；Choose a weight
Si pieces or aluminium sheet, copper coin are adulterated as sheet metal 1030, second metal layer is prepared using the method for sputtering or evaporation
1022, the material of second metal layer 1022 and the material identical of the first metal layer 1021, thickness 500nm-2500nm；
S044：The first metal layer 1021 and the second metal layer 1022 are carried out bonding together to form bonded layer.By
One metal layer 1021 is close together with second metal layer 1022, in 300--500 DEG C of environment, places 15--120 minutes,
Realize being bonded for the first metal layer 1021 and second metal layer 1022, being formed includes electrode layer 1020, the first metal layer 1021, the
Two metal layers 1022, the bonded layer of sheet metal 1030.
S05：It removes the substrate 11 and prepares top electrode 51；Including：
S051：Substrate 11 is removed with excimer laser, blue light GaN buffer layers 101 are exposed；
S052：On exposed blue light GaN buffer layers 101 surface roughening is carried out using photoetching technique；
S053：N-type electrode, that is, top electrode 51 is prepared on coarse blue light GaN buffer layers 101.
S06：Electrode under being prepared in the bonded layer bottom.Including：
S061：One layer of metal Al or Ni or other is prepared using the method for sputtering or evaporation at the bonded layer back side
3rd metal layer of good conductivity；
S062：3rd metal is performed etching, form the i.e. lower electrode 52 of backplate and carries out scribing to form vertical-type
Dual-colored LED chip.
Fig. 8 and Fig. 9 are referred to, Fig. 8 is a kind of plan structure of vertical-type dual-colored LED chip provided in an embodiment of the present invention
Schematic diagram；Fig. 9 is a kind of side structure schematic view of vertical-type dual-colored LED chip provided in an embodiment of the present invention.
Single vertical-type dual-colored LED chip includes a blue light structure 10 and a green light structure 20, then coordinates red fluorescence
Powder can send white light.Separation layer realizes the complete electric isolation of blue light structure 10 and green light structure 20, the light of each color
It is individually controlled by changing size of current by force.Therefore, the preparation method of the vertical-type dual-colored LED chip of the embodiment of the present invention is by indigo plant
Light and green light structure 20 are produced on same substrate, and complete electric isolation is realized by separation layer, simple for process, and are prepared
Dual-colored LED Heat Exchanger Used for Chips it is good, can individually control the wicking of each color, light intensity is big, and color adaptation is flexible, integrated level
It is high.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, it is impossible to assert
The specific implementation of the present invention is confined to these explanations.For those of ordinary skill in the art to which the present invention belongs, exist
On the premise of not departing from present inventive concept, several simple deduction or replace can also be made, should all be considered as belonging to the present invention's
Protection domain.
Claims (10)
1. a kind of vertical-type dual-colored LED chip, which is characterized in that including：The first metal layer (1030) that is cascading,
Two metal layers (1022), the 3rd metal layer (1021), the 4th metal layer (1020), the blue light structure (10) and the green light knot
Structure (20) is arranged on the 4th metal layer (1020), and the blue light structure (10) and the green light structure (20) pass through oxidation
Separation layer (12) is isolated.
2. vertical-type dual-colored LED chip according to claim 1, which is characterized in that further include the first top electrode (51),
Two top electrodes (52), lower electrode (53), wherein, first top electrode (51) is arranged on the blue light structure (10), described
Second top electrode (52) is arranged on the green light structure (20), and the lower electrode (53) is located at the first metal layer (1030)
Bottom.
3. vertical-type dual-colored LED chip according to claim 1, which is characterized in that the blue light structure (10) and described
The cross section of green light structure (20) is rectangle.
4. vertical-type dual-colored LED chip according to claim 3, which is characterized in that the length of the rectangle and it is wide be 100
Micron.
5. vertical-type dual-colored LED chip according to claim 1, which is characterized in that the blue light structure (10) include according to
The secondary blue light GaN buffer layers (101) being stacked, blue light GaN stabilized zones (102), blue light n-type GaN layer (103), blue light
InGaN/GaN multi-quantum pit structures (104), blue light p-type AlGaN barrier layers (105), blue light p-type GaN layer (106).
6. vertical-type dual-colored LED chip according to claim 1, which is characterized in that the green light structure (20) include according to
The secondary green light GaN buffer layers (201) being stacked, green light GaN stabilized zones (202), green light n-type GaN layer (203), green light are active
Layer (204), green light p-type AlGaN barrier layers (205), green light p-type GaN layer (206).
7. vertical-type dual-colored LED chip according to claim 1, which is characterized in that the 3rd metal layer (1021)
Thickness is 300nm-1500nm.
8. vertical-type dual-colored LED chip according to claim 1, which is characterized in that the second metal layer (1022)
Thickness is 500nm-2500nm.
9. vertical-type dual-colored LED chip according to claim 1, which is characterized in that the material of the oxidization isolation layer (12)
Expect for SiO2。
10. vertical-type dual-colored LED chip according to claim 1, which is characterized in that the second metal layer (1022) and
The material identical of 3rd metal layer (1021).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711383453.7A CN108075028A (en) | 2017-12-20 | 2017-12-20 | Vertical-type dual-colored LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711383453.7A CN108075028A (en) | 2017-12-20 | 2017-12-20 | Vertical-type dual-colored LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108075028A true CN108075028A (en) | 2018-05-25 |
Family
ID=62158600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711383453.7A Pending CN108075028A (en) | 2017-12-20 | 2017-12-20 | Vertical-type dual-colored LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108075028A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970538A (en) * | 2019-11-22 | 2020-04-07 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
-
2017
- 2017-12-20 CN CN201711383453.7A patent/CN108075028A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970538A (en) * | 2019-11-22 | 2020-04-07 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
| CN110970538B (en) * | 2019-11-22 | 2022-03-15 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108369977B (en) | Low optical loss flip chip solid state lighting device | |
| JP6294402B2 (en) | Semiconductor structure processing method | |
| KR101469979B1 (en) | group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them | |
| CN103311397B (en) | Delay the p GaN layers of the improved LED of length that is born by pressure | |
| EP2011161A2 (en) | Optoelectronic semiconductor component | |
| TW202339302A (en) | Contact structures of led chips for current injection | |
| TWI262607B (en) | Semiconductor light emitting device | |
| CN103219435A (en) | Photonic device having embedded nano-scale structures | |
| CN209843740U (en) | RGB full-color InGaN-based LED | |
| CN214313231U (en) | Reflection structure and GaN-based thin film type structure LED chip | |
| WO2020011117A1 (en) | Ultraviolet light emitting diode chip for improving light extraction efficiency, and manufacturing method therefor | |
| CN104040735B (en) | The surface treatment of light emitting semiconductor device | |
| CN108075028A (en) | Vertical-type dual-colored LED chip | |
| JP5983068B2 (en) | Semiconductor light emitting element and light emitting device | |
| CN208243977U (en) | LED tabbing game machine | |
| CN107994111A (en) | The preparation method and chip of vertical-type dual-colored LED chip | |
| CN108121136A (en) | RGBY micro projectors | |
| CN108133990A (en) | Light emitting diode (LED) chip with vertical structure based on GaN material | |
| US11876154B2 (en) | Light emitting diode device and method for manufacturing the same | |
| TWI431810B (en) | Optoelectronic device and method for manufacturing the same | |
| CN108008574A (en) | Backlight module and liquid crystal display device | |
| CN208315589U (en) | Tetra- color LED of RGBY based on GaN material | |
| CN208385438U (en) | Tetra- color LED of RGBY based on GaN material | |
| CN108133991A (en) | Four color LED chip of vertical stratification based on GaN material | |
| CN107863441B (en) | Preparation method of high-luminous-rate LED and high-luminous-rate LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180525 |
|
| WD01 | Invention patent application deemed withdrawn after publication |