CN108051980B - Mask plate and preparation method thereof, mask plate exposure system and splicing exposure method - Google Patents
Mask plate and preparation method thereof, mask plate exposure system and splicing exposure method Download PDFInfo
- Publication number
- CN108051980B CN108051980B CN201810004543.9A CN201810004543A CN108051980B CN 108051980 B CN108051980 B CN 108051980B CN 201810004543 A CN201810004543 A CN 201810004543A CN 108051980 B CN108051980 B CN 108051980B
- Authority
- CN
- China
- Prior art keywords
- ultraviolet light
- chromium oxide
- exposure area
- mask plate
- splicing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 238000002834 transmittance Methods 0.000 claims abstract description 57
- 230000031700 light absorption Effects 0.000 claims abstract description 23
- 239000011358 absorbing material Substances 0.000 claims abstract description 18
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 75
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 75
- 239000011248 coating agent Substances 0.000 claims description 37
- 238000000576 coating method Methods 0.000 claims description 37
- 238000010521 absorption reaction Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 230000003247 decreasing effect Effects 0.000 claims description 7
- 238000006460 hydrolysis reaction Methods 0.000 claims description 7
- 230000007062 hydrolysis Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910021555 Chromium Chloride Inorganic materials 0.000 claims description 5
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 22
- 239000011247 coating layer Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910001430 chromium ion Inorganic materials 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- -1 chromium ions Chemical compound 0.000 description 1
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention provides a mask plate and a preparation method thereof, a mask plate exposure system and a splicing exposure method, and relates to the technical field of semiconductors. The mask plate comprises a mask plate body and an ultraviolet light absorption layer positioned in a splicing exposure area of the mask plate body; the content of the ultraviolet light absorbing material in the ultraviolet light absorbing layer is graded along a preset direction in the splicing exposure area, so that the ultraviolet light transmittance passing through the splicing exposure area is graded along the preset direction; wherein, the ultraviolet light absorbing materials with different contents correspond to different ultraviolet light transmittances. The method can avoid the phenomenon of splicing fracture and improve the fault-tolerant capability of the spliced part.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to a mask plate and a preparation method thereof, a mask plate exposure system and a splicing exposure method.
Background
With the development of optical technology and semiconductor technology, flat panel displays represented by Liquid Crystal Displays (LCDs) and Organic Light Emitting Diode (OLED) displays have the characteristics of lightness, thinness, low energy consumption, fast response speed, good color purity, high contrast ratio and the like, and have a leading position in the Display field.
In the existing process, the array substrate or the color film substrate is limited by the size of a mask plate and the size of the substrate, so that a single panel of a part of products needs to be spliced and exposed for at least 2 times. Based on this exposure method, as shown in fig. 1, exposure accuracy is limited, so that it is difficult to ensure a strict alignment of the reticle 01 and the reticle 02 in the splice exposure region 03 in the splice exposure direction (the direction indicated by an arrow in the figure), for example, in the lateral/longitudinal pattern. In addition, under the condition that each mask plate is exposed with 100% energy, as shown in fig. 2, the photosensitive material 04 in the two exposure processes is completely photosensitive, which may cause the fracture of the splice seam 05 to cause abnormal display, which is light leakage for the Black Matrix (BM) layer.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
An object of the present disclosure is to provide a mask plate and a method of manufacturing the same, a mask plate exposure system, and a splicing exposure method, thereby overcoming, at least to some extent, one or more problems caused by the limitations and disadvantages of the related art.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows, or in part will be obvious from the description, or may be learned by practice of the disclosure.
According to one aspect of the present disclosure, a mask includes a mask body and an ultraviolet light absorption layer located in a splice exposure area of the mask body;
the content of an ultraviolet light absorbing material in the ultraviolet light absorbing layer is graded along a preset direction in the splicing exposure area, so that the ultraviolet light transmittance passing through the splicing exposure area is graded along the preset direction;
wherein, the ultraviolet light absorbing materials with different contents correspond to different ultraviolet light transmittances.
In one exemplary embodiment of the present disclosure, the ultraviolet light absorbing layer includes a chromium oxide coating layer, and the ultraviolet light absorbing material includes chromium oxide.
In an exemplary embodiment of the present disclosure, the content of the chromium oxide in the chromium oxide coating layer linearly changes according to the distance from the splice seam in the splice exposure area.
In an exemplary embodiment of the present disclosure, a concentration of chromium oxide in the chromium oxide coating layer is graded in the predetermined direction.
In an exemplary embodiment of the present disclosure, the concentration of chromium oxide in the chromium oxide coating layer is continuously varied along the preset direction, so that the ultraviolet transmittance is continuously varied from 0 to 100%.
In an exemplary embodiment of the present disclosure, a concentration of chromium oxide in the chromium oxide coating layer varies discretely along the preset direction;
the spliced exposure area comprises a plurality of absorption areas, and the concentration of chromium oxide in the chromium oxide coating of each absorption area corresponds to a plurality of graded concentration values respectively, so that the ultraviolet transmittance corresponds to a plurality of transmittances of 0-100% respectively.
In an exemplary embodiment of the present disclosure, a thickness of the chromium oxide coating is tapered along the predetermined direction.
In an exemplary embodiment of the present disclosure, the thickness of the chromium oxide coating layer is continuously varied along the preset direction to continuously vary the ultraviolet transmittance from 0 to 100%.
In an exemplary embodiment of the present disclosure, the thickness of the chromium oxide coating varies discretely along the preset direction;
the spliced exposure area comprises a plurality of absorption areas, and the thickness of the chromium oxide coating of each absorption area corresponds to a plurality of thickness values which are increased progressively respectively, so that the ultraviolet transmittance corresponds to a plurality of transmittances in 0-100% respectively.
In one exemplary embodiment of the present disclosure, the ultraviolet light absorbing material is used for absorbing near ultraviolet light with the wavelength of 350-450 nm.
According to an aspect of the present disclosure, there is provided a method for manufacturing a mask blank, including:
forming an ultraviolet light absorption layer in a splicing exposure area of a mask plate body, wherein the content of an ultraviolet light absorption material in the ultraviolet light absorption layer is gradually changed in the splicing exposure area along a preset direction, so that the ultraviolet light transmittance passing through the splicing exposure area is gradually changed along the preset direction;
wherein, the ultraviolet light absorbing materials with different contents correspond to different ultraviolet light transmittances.
In one exemplary embodiment of the present disclosure, the forming of the ultraviolet light absorption layer includes:
hydrated chromium oxide is generated by adopting a chromium chloride hydrolysis method, and a chromium oxide coating is formed by a spraying process.
According to an aspect of the present disclosure, there is provided a reticle exposure system including the reticle described above.
According to an aspect of the present disclosure, there is provided a stitching exposure method, including:
providing a group of the mask plates, wherein the mask plates have a common splicing exposure area;
exposing a substrate to be exposed by adopting the set of mask plates, so that the ultraviolet light transmission capacity of one mask plate in the splicing exposure area is increased progressively according to a reference direction, and the ultraviolet light transmission rate of the other mask plate in the splicing exposure area is decreased progressively according to the reference direction;
the reference direction is the splicing exposure direction of the group of mask plates and corresponds to the preset direction of one of the mask plates.
According to the mask plate and the preparation method thereof, the mask plate exposure system and the splicing exposure method provided by the exemplary embodiment of the disclosure, the ultraviolet light absorption layer is formed in the splicing exposure area of the mask plate body, and the content of the ultraviolet light absorption material in the ultraviolet light absorption layer is controlled to be gradually changed, so that the light intensity modulation of the ultraviolet light transmittance can be performed on the splicing exposure area. Based on this, at the in-process of concatenation exposure, adopt a plurality of mask plates of group to treat the exposure base plate and expose, so that the concatenation exposure area of these a plurality of mask plates can reach 100% of light intensity after exposing many times, realize 100% light intensity's complete exposure through incomplete exposure many times promptly, can effectually avoid the concatenation seam fracture that causes because of exposing many times completely at the border department in concatenation exposure area like this, thereby improve each direction and include horizontal and fore-and-aft concatenation effect, can also guarantee the mutual succession of concatenation part under the circumstances of slight skew simultaneously, thereby improve the fault-tolerant ability of concatenation department.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
FIG. 1 schematically illustrates a prior art reticle splicing exposure;
FIG. 2 is a schematic diagram illustrating a fracture of a prior art splice seam;
fig. 3 schematically illustrates a structural schematic view of a mask plate in an exemplary embodiment of the present disclosure;
FIG. 4 is a schematic diagram schematically illustrating mask stitching exposure in an exemplary embodiment of the present disclosure
FIG. 5 schematically illustrates an ultraviolet light absorption spectrum of chromium oxide in exemplary embodiments of the present disclosure;
FIG. 6 schematically illustrates a UV energy profile of a stitched exposure region in an exemplary embodiment of the present disclosure;
FIG. 7 schematically shows a schematic view of an apparatus for preparing a chromium oxide coating in an exemplary embodiment of the disclosure;
fig. 8 schematically illustrates a flowchart of a stitching exposure method in an exemplary embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the subject matter of the present disclosure can be practiced without one or more of the specific details, or with other methods, components, devices, steps, and the like. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the present disclosure.
Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale. The thicknesses and shapes of the layers in the drawings are not to be construed as true scale, but merely as a matter of convenience for illustrating the disclosure. The same reference numerals in the drawings denote the same or similar parts, and thus their repetitive description will be omitted.
The present exemplary embodiment provides a mask plate 10, which includes a splicing exposure area 10a and an independent exposure area 10b, and is used for splicing and exposing a substrate to be exposed. As shown in fig. 3, the mask plate 10 may include a mask plate body 101 and an ultraviolet absorption layer 102 covering the surface of the mask plate body 101 and corresponding to the splice exposure area 10a, where the content of the ultraviolet absorption material in the ultraviolet absorption layer 102 may be gradually changed, for example, increased or decreased, in the splice exposure area 10a along a preset direction, so that the ultraviolet transmittance passing through the splice exposure area 10a may be gradually changed, for example, increased or decreased, along the preset direction.
The ultraviolet light absorbing material can be used for absorbing near ultraviolet light with the wavelength of 350-450 nm, and the ultraviolet light absorbing materials with different contents correspond to different ultraviolet light transmittance.
It should be noted that: the preset direction refers to a splicing exposure direction of different mask plates 10 during splicing exposure, such as a transverse direction and/or a longitudinal direction of the mask plate body 101, and specifically, the independent exposure region 10b may point to the splicing exposure region 10a, at which time the content of the ultraviolet light absorbing material may decrease progressively along the preset direction, or the splicing exposure region 10a may point to the independent exposure region 10b, at which time the content of the ultraviolet light absorbing material may increase progressively along the preset direction.
According to the mask plate 10 provided by the exemplary embodiment of the present disclosure, the ultraviolet absorption layer 102 is formed in the spliced exposure area 10a of the mask plate body 101, and the content of the ultraviolet absorption material in the ultraviolet absorption layer 102 is controlled to be gradually changed, so that the light intensity modulation of the ultraviolet transmittance can be performed on the spliced exposure area 10 a. Based on this, as can be seen from fig. 4, in the process of splicing exposure, the substrate 40 to be exposed is exposed by using the plurality of mask plates 10 in groups, so that the spliced exposure area 10a of the plurality of mask plates 10 can reach 100% of the light intensity after multiple exposures, that is, complete exposure of 100% of the light intensity is realized through multiple incomplete exposures, thus the fracture of the splicing seam caused by multiple complete exposures at the boundary of the spliced exposure area 10a can be effectively avoided, thereby improving the splicing effect in all directions including the transverse and longitudinal directions, and simultaneously ensuring the mutual connection of the spliced parts under the condition of slight deviation, thereby improving the fault tolerance of the spliced part.
In the present example embodiment, the ultraviolet light absorbing layer 102 may include a chrome oxide coating layer, and the ultraviolet light absorbing material may include chrome oxide. As shown in fig. 5, since the chromium oxide is specifically hexavalent chromium ions in the alkaline environment and has a good absorption effect on the near-ultraviolet light, the transmittance of the near-ultraviolet light can be controlled by adjusting the content of the chromium oxide, so as to realize the light intensity modulation of the near-ultraviolet light.
As shown in fig. 6, the content of the chromium oxide in the chromium oxide coating may be linearly changed according to the distance between the spliced exposure area 10a and the splicing seam, so that the energy of the ultraviolet light passing through the mask plate 10 may also be linearly changed along with the distance between the ultraviolet light and the splicing seam, and specifically may be linearly changed from one end of the spliced exposure area 10a to the other end thereof along a preset direction, so that the light intensity may be conveniently controlled when a plurality of mask plates 10 are used for splicing exposure, and the full exposure intensity, that is, 100% of the ultraviolet light intensity, may be achieved after multiple exposures of the plurality of mask plates 10.
Of course, the content of the chromium oxide in the chromium oxide coating may also change nonlinearly according to the distance between the splicing exposure area 10a and the splicing seam, as long as the full exposure intensity can be achieved after multiple exposures of multiple mask plates 10, and other restrictions are not mandatory.
In practical production, the mercury lamp used at present can make the photoresist photosensitive, and the spectrum mainly playing the photosensitive role is the spectrum of three wavelengths g, h and i. Because the photoresist is sensitive to light with specific wavelength, the film layer with absorption effect on g, h and i light waves, namely the chromium oxide coating is prepared by utilizing the characteristic, and the purpose of changing the energy of the transmitted light waves can be achieved. Wherein the wavelengths of g, h and i are 436nm, 405nm and 365nm respectively. As can be seen from fig. 5, the absorption spectrum of chromium oxide, i.e., chromium ions, is used to cover the wavelength in this range, thereby achieving the purpose of changing the transmitted light intensity.
In one embodiment of the present example, the content of chromium oxide in the chromium oxide coating may be controlled by the concentration of chromium oxide, i.e.: the concentration of chromium oxide in the chromium oxide coating may be graded in a predetermined direction.
Wherein, along this predetermined direction, the concentration of chromium oxide in the chromium oxide coating can be changed continuously to make ultraviolet transmittance can be changed from 0 to 100%. In this case, when a plurality of, for example, two mask plates 10 are used for the mosaic exposure, it is only necessary to make the preset directions of the two mask plates 10 opposite to each other, so that the transmittance of the ultraviolet light passing through one of the mask plates 10 in the same direction can be continuously changed from 0 to 100%, and the transmittance of the ultraviolet light passing through the other mask plate 10 can be continuously changed from 100% to 0, so that a single complete exposure can be realized by two incomplete exposures.
Or, along the preset direction, the concentration of the chromium oxide in the chromium oxide coating can also be discretely changed, so that the ultraviolet transmittance can be discontinuously changed from 0 to 100 percent; the spliced exposure area 10a may include a plurality of absorption areas, and the concentration of chromium oxide in the chromium oxide coating of each absorption area corresponds to a plurality of graded concentration values, so that the ultraviolet transmittance corresponds to a plurality of graded transmittances of 0-100% respectively. In this case, when a plurality of, for example, two mask plates 10 are used for the mosaic exposure, it is only necessary to make the preset directions of the two mask plates 10 opposite to each other, so that the ultraviolet transmittance passing through one of the mask plates 10 in the same direction can be changed from 0 to 100% intermittently, for example, the ultraviolet transmittances corresponding to the respective absorption regions are 0, 30%, 60% and 100%, and the ultraviolet transmittance passing through the other mask plate 10 can be changed from 100% intermittently to 0, for example, the ultraviolet transmittances corresponding to the respective absorption regions are 100%, 70%, 40% and 0, and the positions of the respective absorption regions of the two mask plates 10 correspond to each other, so that a complete exposure can be realized by two incomplete exposures.
However, considering that the continuously changing chromium oxide concentration can obtain the continuously changing ultraviolet transmittance, which is beneficial to ensure the uniform transition of the spliced exposure area 10a, so as to effectively reduce the generation of spliced mura, the former scheme is preferably adopted in the present exemplary embodiment.
In another embodiment of the present example, the content of chromium oxide in the chromium oxide coating may be controlled by the thickness of the chromium oxide coating, i.e.: the thickness of the chromium oxide coating may be graded in a predetermined direction.
Wherein, along this preset direction, the thickness of chromium oxide coating can change continuously to make ultraviolet transmittance can change from 0 to 100% continuously. In this case, when a plurality of, for example, two mask plates 10 are used for the mosaic exposure, it is only necessary to make the preset directions of the two mask plates 10 opposite to each other, so that the transmittance of the ultraviolet light passing through one of the mask plates 10 in the same direction can be continuously changed from 0 to 100%, and the transmittance of the ultraviolet light passing through the other mask plate 10 can be continuously changed from 100% to 0, so that a single complete exposure can be realized by two incomplete exposures.
Or, along the preset direction, the thickness of the chromium oxide coating can also be discretely changed, so that the ultraviolet transmittance can be discontinuously changed from 0 to 100 percent; the spliced exposure area 10a may include a plurality of absorption areas, and the thickness of the chromium oxide coating in each absorption area corresponds to a plurality of graded thickness values, so that the ultraviolet transmittance corresponds to a plurality of graded transmittances in the range of 0-100% respectively. In this case, when a plurality of, for example, two mask plates 10 are used for the mosaic exposure, it is only necessary to make the preset directions of the two mask plates 10 opposite to each other, so that the ultraviolet transmittance passing through one of the mask plates 10 in the same direction can be changed from 0 to 100% intermittently, for example, the ultraviolet transmittances corresponding to the respective absorption regions are 0, 30%, 60% and 100%, and the ultraviolet transmittance passing through the other mask plate 10 can be changed from 100% intermittently to 0, for example, the ultraviolet transmittances corresponding to the respective absorption regions are 100%, 70%, 40% and 0, and the positions of the respective absorption regions of the two mask plates 10 correspond to each other, so that a complete exposure can be realized by two incomplete exposures.
However, the former scheme is preferably adopted in the present exemplary embodiment, considering that the continuously changing thickness of the chromium oxide coating can obtain the continuously changing ultraviolet transmittance, which is beneficial to ensure the uniform transition of the spliced exposure area 10a, so as to effectively reduce the generation of spliced mura.
Based on the mask plate 10 described above, the present exemplary embodiment also provides a mask plate manufacturing method, which may include:
an ultraviolet absorption layer 102 is formed on the spliced exposure area 10a of the mask body 101, and the content of the ultraviolet absorption material in the ultraviolet absorption layer 102 is graded, for example, increased or decreased, in the spliced exposure area 10a along a preset direction, so that the ultraviolet transmittance passing through the spliced exposure area 10a is graded, for example, increased or decreased, along the preset direction.
The ultraviolet light absorbing material can be used for absorbing near ultraviolet light with the wavelength of 350-450 nm, and the ultraviolet light absorbing materials with different contents correspond to different ultraviolet light transmittance.
According to the manufacturing method of the mask plate 10 provided by the exemplary embodiment of the present disclosure, the ultraviolet light absorption layer 102 is formed in the spliced exposure area 10a of the mask plate body 101, and the content of the ultraviolet light absorption material in the ultraviolet light absorption layer 102 is controlled to be gradually changed, so that the light intensity modulation of the ultraviolet transmittance can be performed on the spliced exposure area 10 a. Based on this, in the process of splicing exposure, adopt a plurality of mask plate 10 of group to treat the exposure base plate and expose, so that the concatenation exposure area 10a of these a plurality of mask plate 10 can reach 100% of light intensity after exposing many times, namely realize 100% light intensity's complete exposure through incomplete exposure many times, can effectually avoid splicing seam fracture that the border department of the concatenation exposure area 10a caused because of exposing completely many times like this, thereby improve each direction and include horizontal and fore-and-aft concatenation effect, can also guarantee the mutual connection of concatenation part under the circumstances of slight skew simultaneously, thereby improve the fault-tolerant ability of concatenation department.
In this exemplary embodiment, the method for forming the ultraviolet light absorption layer 103 may include, for example: hydrated chromium oxide is generated by adopting a chromium chloride hydrolysis method, and a chromium oxide coating is formed by a spraying process.
Wherein, when the hydrated chromium oxide is generated by adopting a chromium chloride hydrolysis method, the hydrolysis rate can be controlled by the pH value of a chromium chloride solution; when the coating rate of the deposition surface is equivalent to the hydrolysis rate of chromium ions, the deposited chromium oxide coating can realize a flat and smooth continuous film. In addition, by controlling the stirring rate of the film-forming solvent, the growth rate of the crystal nuclei can also be controlled. On the basis, the film forming substrate can adopt quartz glass which has the characteristics of glass, so that the film thickness and the uniformity of the film layer can be controlled only by controlling the reaction time.
Specifically, as shown in fig. 7, the chromium oxide coating layer forming apparatus is as follows: by adopting the nozzle type spraying process, on one hand, the spraying speed of the nozzle 700 is controlled, and on the other hand, the movement precision control of hundreds of nanometers is realized by controlling the oblique sliding speed of the mask plate 10, for example, by adopting a Michelson interferometer, the control of the hydrolysis reaction time can be realized, so that the precise control of the film forming thickness is realized.
The present exemplary embodiment also provides a mask blank exposure system including the mask blank 10 described above. When a plurality of, for example, two mask plates 10 are used for the tiled exposure, the preset directions of the same set of mask plates 10 should be opposite, so that the absorption of ultraviolet light by different mask plates 10 is in gradient changes in opposite directions. For example, the first predetermined direction of one mask plate 10 is from top to bottom, and the uv transmittance thereof changes from 0 to 100% in the first predetermined direction, while the second predetermined direction of the other mask plate 10 is from bottom to top, and the uv transmittance thereof also changes from 0 to 100% in the second predetermined direction, but changes from 100% to 0 in the first predetermined direction.
Therefore, in the process of splicing exposure, the substrate 40 to be exposed is exposed by adopting the grouped mask plates 10, so that the splicing exposure area 10a of the mask plates 10 can reach 100% of light intensity after multiple times of exposure, namely, complete exposure of 100% of light intensity is realized through multiple times of incomplete exposure, thus, the fracture of splicing seams at the boundary of the splicing exposure area 10a caused by multiple times of complete exposure can be effectively avoided, the splicing effect of transverse and longitudinal directions can be improved, meanwhile, the mutual connection of splicing parts under the condition of slight deviation can be ensured, and the fault-tolerant capability of the splicing part can be improved.
The present exemplary embodiment further provides a stitching exposure method, as shown in fig. 8, the stitching exposure method may include:
s1, providing a group of the above mask plates 10, wherein the mask plates have a common splicing exposure area;
and S2, exposing the substrate 40 to be exposed by adopting the mask plates, so that the ultraviolet light transmission capacity of one mask plate 10 in the splicing exposure area is increased progressively according to the reference direction, and the ultraviolet light transmission rate of the other mask plate 10 in the splicing exposure area is decreased progressively according to the reference direction.
The reference direction is the splicing exposure direction of the mask plates and corresponds to the preset direction of one of the mask plates 10, and the exposure intensity of the mask plates in the splicing exposure area after multiple exposures reaches the full exposure intensity.
The splicing exposure method provided by the exemplary embodiment of the disclosure adopts a plurality of the mask plates 10 in group to expose a substrate to be exposed, so that the splicing exposure area 10a of the plurality of the mask plates 10 can reach 100% of light intensity after multiple exposures, namely, complete exposure of 100% of light intensity is realized through multiple incomplete exposures, thus, the fracture of a splicing seam caused by multiple complete exposures at the boundary of the splicing exposure area 10a can be effectively avoided, thereby improving the splicing effect of all directions including transverse and longitudinal directions, and simultaneously ensuring the mutual connection of splicing parts under the condition of slight deviation, thereby improving the fault-tolerant capability of the splicing position.
The embodiment also provides a spliced exposure product prepared by adopting the spliced exposure method. In this example embodiment, the spliced exposure product may be, for example, an array substrate or a color filter substrate, and the array substrate and the color filter substrate may be used to form a display device. The display device may include any product or component with a display function, such as a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, and a navigator.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
It will be understood that the present disclosure is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.
Claims (12)
1. A mask plate is provided with a splicing exposure area and an independent exposure area and is characterized by comprising a mask plate body and an ultraviolet light absorption layer, wherein the ultraviolet light absorption layer covers the surface of the mask plate body and corresponds to the splicing exposure area;
the content of an ultraviolet light absorbing material in the ultraviolet light absorbing layer is graded in the splicing exposure area along a preset direction from the independent exposure area to the splicing exposure area, so that the ultraviolet light transmittance passing through the splicing exposure area is graded along the preset direction;
wherein, the ultraviolet light absorbing materials with different contents correspond to different ultraviolet light transmittance;
the ultraviolet light absorption layer comprises a chromium oxide coating, and the ultraviolet light absorption material comprises chromium oxide;
the content of chromium oxide in the chromium oxide coating decreases progressively along the preset direction in the splicing exposure area, so that the ultraviolet transmittance is changed from 0 to 100%.
2. The mask plate according to claim 1, wherein the content of chromium oxide in the chromium oxide coating linearly changes according to the distance from the splicing seam in the splicing exposure area.
3. A mask blank according to claim 1 or 2, wherein the concentration of chromium oxide in the chromium oxide coating varies continuously along the predetermined direction.
4. A mask blank according to claim 1 or 2, wherein the concentration of chromium oxide in the chromium oxide coating varies discretely along the preset direction;
the spliced exposure area comprises a plurality of absorption areas, and the concentration of chromium oxide in the chromium oxide coating of each absorption area corresponds to a plurality of graded concentration values respectively, so that the ultraviolet transmittance corresponds to a plurality of transmittances of 0-100% respectively.
5. A mask blank according to claim 1 or 2, wherein the thickness of the chromium oxide coating is graded along the predetermined direction.
6. The mask plate according to claim 5, wherein the thickness of the chromium oxide coating is continuously varied along the preset direction so that the ultraviolet transmittance is continuously varied from 0 to 100%.
7. The mask plate according to claim 5, wherein the thickness of the chromium oxide coating varies discretely along the preset direction;
the spliced exposure area comprises a plurality of absorption areas, and the thickness of the chromium oxide coating of each absorption area corresponds to a plurality of tapered thickness values respectively, so that the ultraviolet transmittance corresponds to a plurality of transmittances of 0-100% respectively.
8. The mask plate according to claim 1, wherein the ultraviolet light absorbing material is used for absorbing near ultraviolet light with the wavelength of 350-450 nm.
9. A method for preparing a mask plate, wherein the mask plate is provided with a splicing exposure area and an independent exposure area, and the method comprises the following steps:
forming an ultraviolet light absorption layer in the spliced exposure area of the mask plate body, wherein the content of an ultraviolet light absorption material in the ultraviolet light absorption layer is gradually changed in the spliced exposure area along a preset direction from the independent exposure area to the spliced exposure area, so that the ultraviolet light transmittance passing through the spliced exposure area is gradually changed along the preset direction;
wherein, the ultraviolet light absorbing materials with different contents correspond to different ultraviolet light transmittance;
the ultraviolet light absorption layer comprises a chromium oxide coating, and the ultraviolet light absorption material comprises chromium oxide;
the content of chromium oxide in the chromium oxide coating decreases progressively along the preset direction in the splicing exposure area, so that the ultraviolet transmittance is changed from 0 to 100%.
10. The method for manufacturing a light-absorbing layer according to claim 9, wherein the forming of the ultraviolet light-absorbing layer includes:
hydrated chromium oxide is generated by adopting a chromium chloride hydrolysis method, and a chromium oxide coating is formed by a spraying process.
11. A reticle exposure system comprising a reticle according to any one of claims 1 to 8.
12. A splicing exposure method is characterized by comprising the following steps:
providing a set of masks according to any one of claims 1 to 8, the set of masks having a common stitched exposure area;
exposing a substrate to be exposed by adopting the set of mask plates, so that the ultraviolet transmittance of one mask plate in the spliced exposure area is increased progressively according to a reference direction, and the ultraviolet transmittance of the other mask plate in the spliced exposure area is decreased progressively according to the reference direction;
the reference direction is the splicing exposure direction of the group of mask plates and corresponds to the preset direction of one of the mask plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810004543.9A CN108051980B (en) | 2018-01-03 | 2018-01-03 | Mask plate and preparation method thereof, mask plate exposure system and splicing exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810004543.9A CN108051980B (en) | 2018-01-03 | 2018-01-03 | Mask plate and preparation method thereof, mask plate exposure system and splicing exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108051980A CN108051980A (en) | 2018-05-18 |
| CN108051980B true CN108051980B (en) | 2020-11-27 |
Family
ID=62126212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810004543.9A Expired - Fee Related CN108051980B (en) | 2018-01-03 | 2018-01-03 | Mask plate and preparation method thereof, mask plate exposure system and splicing exposure method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108051980B (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201974632U (en) * | 2011-04-12 | 2011-09-14 | 京东方科技集团股份有限公司 | Masking film plate and masking film plate module |
| CN201974631U (en) * | 2011-04-12 | 2011-09-14 | 京东方科技集团股份有限公司 | Mask plate and mask plate group |
| CN102955354B (en) * | 2012-11-01 | 2015-01-07 | 合肥京东方光电科技有限公司 | Mask plate and manufacturing method thereof |
| CN104570611B (en) * | 2013-10-21 | 2016-06-08 | 合肥京东方光电科技有限公司 | Mask plate and improvement splicing exposure nurse thereof draw the method for phenomenon |
| CN105404093A (en) * | 2016-01-06 | 2016-03-16 | 京东方科技集团股份有限公司 | Mask plate, display substrate and preparation method thereof, display panel and display device |
| CN107065428B (en) * | 2016-12-29 | 2021-01-15 | Tcl华星光电技术有限公司 | Spliced unit photomask for forming color resistance layer and black matrix |
| CN107167937B (en) * | 2017-06-01 | 2021-04-27 | Tcl华星光电技术有限公司 | Mask plate, color filter plate and display panel thereof |
-
2018
- 2018-01-03 CN CN201810004543.9A patent/CN108051980B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN108051980A (en) | 2018-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW594343B (en) | Color filter structure and method of fabrication | |
| US10620526B2 (en) | Mask, manufacturing method thereof, patterning method employing mask, optical filter | |
| US10890789B2 (en) | Mask and manufacturing method thereof as well as display device | |
| US9978595B2 (en) | Photo mask and exposure system | |
| CN107450224B (en) | Preparation method of COA type array substrate | |
| CN104965388A (en) | Photomask for photo alignment and photo-alignment method | |
| US7704646B2 (en) | Half tone mask and method for fabricating the same | |
| WO2019127674A1 (en) | Method for fabricating black matrix and spacer | |
| WO2018214198A1 (en) | Manufacturing method and mask for liquid-crystal display panel having one-piece black matrix and photoresist spacer | |
| JP2008281919A (en) | Method of forming color filter forming substrate and color filter forming substrate | |
| WO2020118937A1 (en) | Preparation method for black matrix and display device | |
| CN103913892B (en) | Liquid crystal display panel | |
| WO2016029516A1 (en) | Method for manufacturing pairing marks of cf substrate | |
| JP5622052B2 (en) | Color filter, liquid crystal display device, and method of manufacturing color filter | |
| WO2017035909A1 (en) | Photomask for optical alignment and optical alignment method | |
| CN108051980B (en) | Mask plate and preparation method thereof, mask plate exposure system and splicing exposure method | |
| WO2018201545A1 (en) | Photomask and manufacturing method for active switch array substrate using same | |
| CN107238965A (en) | A kind of display panel and preparation method thereof | |
| US9372369B2 (en) | Liquid crystal panel and manufacturing method thereof | |
| CN110703489A (en) | Mask plate, display panel and preparation method of display panel | |
| CN101650529B (en) | Mask for manufacturing TFT and method for manufacturing source and drain of TFT | |
| CN104199203B (en) | Liquid crystal display panel and method for manufacturing same | |
| WO2020024404A1 (en) | Mask plate, and manufacturing method for flexible liquid crystal display panel | |
| WO2019057218A1 (en) | Manufacturing method and manufacturing apparatus for display panel | |
| KR20150018144A (en) | Liquid crystal display device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201127 |