CN108039188A - A kind of control circuit of non-volatile three-dimensional storage - Google Patents
A kind of control circuit of non-volatile three-dimensional storage Download PDFInfo
- Publication number
- CN108039188A CN108039188A CN201711281993.4A CN201711281993A CN108039188A CN 108039188 A CN108039188 A CN 108039188A CN 201711281993 A CN201711281993 A CN 201711281993A CN 108039188 A CN108039188 A CN 108039188A
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- China
- Prior art keywords
- voltage
- circuit
- dimensional storage
- wordline
- control circuit
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Abstract
The invention discloses a kind of control circuit of non-volatile three-dimensional storage, which includes：Voltage generation circuit, level sensitive circuit, charging circuit and discharge circuit；Voltage generation circuit is used to provide voltage for three-dimensional storage wordline；Charging circuit is used to charge for three-dimensional storage wordline；Discharge circuit is used to discharge for three-dimensional storage wordline；Whether the word line voltage that level sensitive circuit is used to detect in three-dimensional storage deviates target voltage, when word line voltage is less than target voltage, three-dimensional storage is charged by charging circuit, and when word line voltage is higher than target voltage, three-dimensional storage is discharged by the discharge circuit.The control circuit effectively eliminates the disturbance of three-dimensional storage word line voltage, prevent three-dimensional storage word line voltage coupled problem caused by process deviation and bias voltage control sequential, word line voltage stabilization time has been greatly shortened, has significantly improved the read-write efficiency of three-dimensional storage.
Description
Technical field
The present invention relates to the nonvolatile memory technology field of semiconductor integrated circuit, more specifically, more particularly to one
The control circuit of the non-volatile three-dimensional storage of kind.
Background technology
With the continuous development of scientific technology, various memories be widely used to daily life and
In work.
Based on three-dimensional storage, with reference to figure 1, wherein, n is the positive integer more than 1, due to three-dimensional storage structure and
Technique manufactures reason, and there are larger parasitic capacitance Cp between its adjacent word line WL, during read-write, each wordline may quilt
Multiple voltage generators are biased to different voltages, and the initial time that bias voltage changes is different, if as shown in Fig. 2,
After certain wordline WLn has reached target voltage, when the voltage of adjacent WLn+1 or WLn-1 change, WLn will be because of voltage coupling
Close effect and deviate target voltage Δ Vn, and need certain recovery time Δ T, can just be again restored to target voltage Δ
Vn。
So, the coupled problem of each layer WL voltages of three-dimensional storage how is solved, is that those skilled in the art are urgently to be resolved hurrily
The problem of.
The content of the invention
To solve the above problems, the present invention provides a kind of control circuit of non-volatile three-dimensional storage, prevent three-dimensional from depositing
Word line voltage coupled problem caused by reservoir process deviation and bias voltage control sequential, has been greatly shortened word line voltage stabilization
Time, significantly improves the read-write efficiency of three-dimensional storage.
To achieve the above object, the present invention provides following technical solution：
A kind of control circuit of non-volatile three-dimensional storage, the control circuit include：Voltage generation circuit, level detection
Circuit, charging circuit and discharge circuit；
Wherein, the voltage generation circuit is used to provide variable wordline input voltage for the three-dimensional storage；
The charging circuit is used to charge for the three-dimensional storage wordline；
The discharge circuit is used to discharge for the three-dimensional storage；
It is defeated whether the word line voltage that the level sensitive circuit is used to detect in the three-dimensional storage deviates wordline target
Go out voltage, when the word line voltage in the three-dimensional storage is less than the wordline target output voltage, the three-dimensional storage
Charged by the charging circuit, when the word line voltage in the three-dimensional storage is higher than the wordline target output voltage
When, the three-dimensional storage is discharged by the discharge circuit.
Preferably, in above-mentioned control circuit, the control circuit further includes：
Controllable target voltage generative circuit, the controllable target voltage generative circuit and the voltage generation circuit
Input terminal connects, for producing the wordline target output voltage of the three-dimensional storage.
Preferably, in above-mentioned control circuit, the voltage generation circuit includes：Operational amplifier, p-type field-effect tube,
First resistor and second resistance；
Wherein, the reverse input end of the operational amplifier and the input terminal of the controllable target voltage generative circuit connect
Connect, the positive input of the operational amplifier is connected with one end of the second resistance, the output terminal of the operational amplifier
It is connected with the grid of the p-type field-effect tube, the source electrode of the p-type field-effect tube is connected with voltage output end, the p-type field effect
Should the drain electrode of pipe be connected respectively with the other end of the second resistance and the word line voltage input terminal of the three-dimensional storage, institute
The one end for stating first resistor is connected with one end of the second resistance, the other end grounding connection of the first resistor.
Preferably, in above-mentioned control circuit, the first resistor is variable resistor.
Preferably, in above-mentioned control circuit, the voltage generation circuit further includes：3rd resistor；
Wherein, one end of the 3rd resistor is connected with one end of the second resistance, the other end of the 3rd resistor
It is connected respectively with the positive input of the operational amplifier and one end of the first resistor.
Preferably, in above-mentioned control circuit, the level sensitive circuit includes：Voltage comparator；
Wherein, the positive input of the voltage comparator is connected with one end of the second resistance, and the voltage compares
The reverse input end of device is connected with the output terminal of the controllable target voltage generative circuit, the output terminal of the voltage comparator
It is connected with the discharge circuit.
Preferably, in above-mentioned control circuit, the level sensitive circuit includes：Voltage comparator；
Wherein, the positive input of the voltage comparator is connected with one end of the 3rd resistor, and the voltage compares
The reverse input end of device is connected with the output terminal of the controllable target voltage generative circuit, the output terminal of the voltage comparator
It is connected with the discharge circuit.
Preferably, in above-mentioned control circuit, the discharge circuit includes：Adjustable current source；
Wherein, one end of the adjustable current source is connected with the output terminal of the voltage comparator, the adjustable current source
The other end be connected with the drain electrode of the p-type field-effect tube.
By foregoing description, a kind of control circuit of non-volatile three-dimensional storage provided by the invention, the control
Circuit includes：Voltage generation circuit, level sensitive circuit, charging circuit and discharge circuit；Wherein, the voltage generation circuit
For providing voltage for the three-dimensional storage wordline；The charging circuit is used to be filled for the three-dimensional storage wordline
Electricity；The discharge circuit is used to discharge for the three-dimensional storage wordline；The level sensitive circuit is used to detect described
Whether the word line voltage in three-dimensional storage deviates wordline target output voltage, when the word line voltage in the three-dimensional storage is low
When the wordline target output voltage, the three-dimensional storage is charged by the charging circuit, when the three-dimensional is deposited
When word line voltage in reservoir is higher than the wordline target output voltage, the three-dimensional storage is carried out by the discharge circuit
Electric discharge.
The control circuit effectively eliminates three-dimensional storage word by level sensitive circuit, charging circuit and discharge circuit
Line voltage disturbs, and prevents word line voltage coupled problem caused by three-dimensional storage process deviation and bias voltage control sequential, greatly
Amplitude shortens word line voltage stabilization time, significantly improves the read-write efficiency of three-dimensional storage.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structure diagram of three-dimensional storage；
Fig. 2 changes principle schematic for a kind of three-dimensional storage word line voltage；
Fig. 3 is a kind of structure diagram of the control circuit of non-volatile three-dimensional storage provided in an embodiment of the present invention；
Fig. 4 is the structure diagram of the control circuit of the non-volatile three-dimensional storage of another kind provided in an embodiment of the present invention；
Fig. 5 is the structure diagram of the control circuit of another non-volatile three-dimensional storage provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
With reference to figure 3, Fig. 3 shows for a kind of structure of the control circuit of non-volatile three-dimensional storage provided in an embodiment of the present invention
It is intended to.
The control circuit includes：Voltage generation circuit 11, level sensitive circuit 12, charging circuit 13 and discharge circuit
14；Wherein, the voltage generation circuit 11 is used to provide voltage for the three-dimensional storage wordline, and the charging circuit 13 is used for
Charging for the three-dimensional storage wordline, the discharge circuit 14 is used to discharge for the three-dimensional storage wordline,
Whether the word line voltage that the level sensitive circuit 12 is used to detect in the three-dimensional storage deviates wordline target output voltage,
When the word line voltage in the three-dimensional storage is less than the wordline target output voltage, the three-dimensional storage wordline passes through
The charging circuit 13 charges, when the word line voltage in the three-dimensional storage is higher than the wordline target output voltage
When, the three-dimensional storage wordline is discharged by the discharge circuit 14.
The control circuit effectively eliminates three-dimensional by level sensitive circuit 12, charging circuit 13 and discharge circuit 14 and deposits
Reservoir word line voltage disturbs, and word line voltage coupling caused by preventing three-dimensional storage process deviation and bias voltage control sequential is asked
Topic, has been greatly shortened word line voltage stabilization time, has significantly improved the read-write efficiency of three-dimensional storage.
Further, as shown in Figure 1, the control circuit further includes：
Controllable target voltage generative circuit 15, the controllable target voltage generative circuit 15 and voltage generation electricity
The input terminal connection on road 11, for producing the wordline target output voltage of the three-dimensional storage.
Specifically, the controllable target voltage generative circuit 15 is formed using electric resistance partial pressure string, switch and decoder,
For the wordline target output voltage that can be adjusted to the voltage generation circuit 11 generation.
Further, as shown in Figure 1, the voltage generation circuit 11 includes：Operational amplifier, p-type field-effect tube, first
Resistance R1 and second resistance R2.
Wherein, the input terminal of the reverse input end of the operational amplifier and the controllable target voltage generative circuit 15
Connection, the positive input of the operational amplifier is connected with one end of the second resistance R2, the operational amplifier it is defeated
Outlet is connected with the grid of the p-type field-effect tube, and the source electrode of the p-type field-effect tube is connected with voltage output end Vcc, described
The drain electrode of p-type field-effect tube is inputted with the other end of the second resistance R2 and the word line voltage of the three-dimensional storage respectively
End connection, one end of the first resistor R1 are connected with one end of the second resistance R2, the other end of the first resistor R1
Grounding connection.
Optionally, as shown in figure 4, the first resistor R1 is variable resistor, then, can be defeated by varying wordline target
Go out voltage and then change the voltage generation circuit 11 to the output voltage of the three-dimensional storage wordline, adjusting can also be passed through
The resistance value of the first resistor R1 and then change output voltage of the voltage generation circuit 11 to the three-dimensional storage wordline.
Specifically, buffer of the voltage generation circuit 11 as wordline target output voltage, by adjusting described
The one resistance R1 and second resistance R2 realizes that voltage gain is adjusted, its voltage gain is (R1+R2)/R1, then the electricity
Press generative circuit 11 to the output voltage of the three-dimensional storage wordline be Vout=Vin × (R1+R2)/R1.
As shown in figure 3, feedback voltage Vfb 1=Vout × R1/ (R1+R2) in the control circuit, by comparing feedback
Relation between voltage Vfb1 and wordline target output voltage Vin, and then the working status of discharge circuit and charging circuit is controlled,
In initial state, feedback voltage Vfb 1 is equal with wordline target output voltage Vin.
It should be noted that the charging circuit 13 shares the p-type field-effect tube with the voltage generation circuit 11, according to
According to the output signal of the operational amplifier, the working status of the p-type field-effect tube, when Vctrl is low level, institute are controlled
The conducting of p-type field-effect tube is stated, for charging for associated word lines in the three-dimensional storage.
Further, as shown in figure 3, the level sensitive circuit 12 includes：Voltage comparator.
Wherein, the positive input of the voltage comparator is connected with one end of the second resistance R2, the voltage ratio
Reverse input end compared with device is connected with the output terminal of the controllable target voltage generative circuit 15, the voltage comparator it is defeated
Outlet is connected with the discharge circuit 14.
Specifically, when three-dimensional storage word line voltage is near wordline target output voltage in order to prevent, due to charging electricity
Road 13 works alternatively caused oscillation problem with discharge circuit 14, and the level sensitive circuit 12 can be compared using hysteresis voltage
Device, the value of its hysteresis voltage will be determined by the maximum wordline coupling crosstalk voltage of three-dimensional storage.
As shown in figure 4, when feedback voltage Vfb 1 is less than the wordline target output voltage Vin, Vctrl is low level
When, p-type field-effect tube conducting, i.e., described charging circuit 13 is in running order, for for phase in the three-dimensional storage
Wordline is closed to charge；Voltage comparator output low level in the level sensitive circuit 12, controls the discharge circuit 14
It is closed, without discharge operation.
When feedback voltage Vfb 1 is higher than the wordline target output voltage Vin, Vctrl is high level, the p-type field effect
Should pipe by that is, described charging circuit 13 is closed, without charging operations；Electricity in the level sensitive circuit 12
Comparator output high level is pressed, controls the discharge circuit 14 in the conduction state, carries out discharge operation, until three-dimensional storage
In associated word lines voltage be discharged to wordline target output voltage untill.
Also, the charging circuit 13 and the discharge circuit 14 are not in situation about simultaneously turning on, and are being charged
Cheng Zhong, discharge circuit 14 remains off, and in discharge process, charging circuit 13 remains off, the section of high degree
Save power consumption.
Further, as shown in figure 4, the discharge circuit 14 includes：Adjustable current source.
Wherein, one end of the adjustable current source is connected with the output terminal of the voltage comparator, the adjustable current source
The other end be connected with the drain electrode of the p-type field-effect tube.
Specifically, since the wordline physical arrangement of three-dimensional storage can be equivalent to distributed RC network, and time constant RC
It is larger with parasitic capacitance Cp, therefore the speed that any one word line voltage rises or reduce is limited, therefore coupling crosstalk voltage
There are certain rise time or reduce the time.When the charging rate or the velocity of discharge of charging circuit and discharge circuit are much larger than word
When line coupled voltages change speed and charging and discharging capabilities and are more than the correlative coupling quantity of electric charge, crosstalk voltage will be totally constrained.
Discharge capability is too fast in order to prevent causes three-dimensional storage word line voltage overdischarge, word line voltage is quickly less than word
Line target output voltage and cause to be alternately produced oscillation problem between charging circuit and discharge circuit, then the electric discharge of discharge circuit
Size of current needs to control, therefore the discharge circuit is realized using adjustable current source.
Based on the above embodiment of the present invention, in an alternative embodiment of the invention, as shown in figure 5, the voltage generation circuit
11 further include：3rd resistor R3.
Wherein, one end of the 3rd resistor R3 is connected with one end of the second resistance R2, the 3rd resistor R3's
The other end is connected with the positive input of the operational amplifier and one end of the first resistor R1 respectively.
Specifically, the resistance value of the 3rd resistor R3 is much smaller than the resistance value of the second resistance R2.
The level sensitive circuit 12 includes：Voltage comparator.
Wherein, the positive input of the voltage comparator is connected with one end of the 3rd resistor, and the voltage compares
The reverse input end of device is connected with the output terminal of the controllable target voltage generative circuit 15, the output of the voltage comparator
End is connected with the discharge circuit 14.
Specifically, since the voltage comparator is there are offset voltage, to prevent that word line voltage is filling in three-dimensional storage
When electricity is close to wordline target output voltage, discharge circuit is accidentally opened, therefore sets the 3rd resistor R3.
Since the resistance value of the 3rd resistor R3 is much smaller than the resistance value of the second resistance R2, then Vfb2 is slightly above
Vfb1, effectively can prevent discharge circuit from causing wrong startup due to process mismatch or noise jamming.
Based on this, by comparing the relation between Vfb2 and wordline target output voltage Vin, so control discharge circuit with
The working status of charging circuit, in initial state, feedback voltage Vfb 1 is equal with wordline target output voltage Vin, can also
It is equal with wordline target output voltage Vin equivalent to Vfb2.
When Vfb2 is less than the wordline target output voltage Vin, i.e. Vfb1 is less than the wordline target output voltage
When Vin, Vctrl are low level, p-type field-effect tube conducting, i.e., described charging circuit 13 is in running order, for for institute
Associated word lines in three-dimensional storage are stated to charge；Voltage comparator output low level in the level sensitive circuit 12, control
Make the discharge circuit 14 to be closed, without discharge operation.
When Vfb2 is higher than the wordline target output voltage Vin, i.e. Vfb1 is higher than the wordline target output voltage
Vin, Vctrl are high level, and the p-type field-effect tube is by that is, described charging circuit 13 is closed, without charging
Operation；Voltage comparator output high level in the level sensitive circuit 12, controls the discharge circuit 14 to be on shape
State, carries out discharge operation, untill the associated word lines voltage in three-dimensional storage is discharged to target voltage.
By foregoing description, which is passed through by level sensitive circuit, charging circuit and discharge circuit
The magnitude relationship between feedback voltage and wordline target output voltage in the control circuit is detected, judges phase in three-dimensional storage
Close whether word line voltage deviates wordline target output voltage.If feedback voltage is less than wordline target output voltage, charging circuit
Conducting, for carrying out charging untill wordline target output voltage is reached for associated word lines in three-dimensional storage；If feedback electricity
Pressure is when be higher than wordline target output voltage, discharging circuit conduction, for for associated word lines in three-dimensional storage carry out electric discharge up to
Untill reaching wordline target output voltage.
And charging circuit and discharge circuit are two independent circuit structures, charging operations are carried out respectively and electric discharge is grasped
Make.
The control circuit effectively eliminate three-dimensional storage word line voltage disturbance, prevent three-dimensional storage process deviation and partially
Word line voltage coupled problem caused by putting voltage control sequential, has been greatly shortened word line voltage stabilization time, has significantly improved
The read-write efficiency of three-dimensional storage.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (8)
1. a kind of control circuit of non-volatile three-dimensional storage, it is characterised in that the control circuit includes：Voltage generation electricity
Road, level sensitive circuit, charging circuit and discharge circuit；
Wherein, the voltage generation circuit is used to provide voltage for the three-dimensional storage wordline；
The charging circuit is used to charge for the three-dimensional storage wordline；
The discharge circuit is used to discharge for the three-dimensional storage wordline；
Whether the word line voltage that the level sensitive circuit is used to detect in the three-dimensional storage deviates wordline target output electricity
Pressure, when the word line voltage in the three-dimensional storage is less than the wordline target output voltage, the three-dimensional storage wordline
Charged by the charging circuit, when the word line voltage in the three-dimensional storage is higher than the wordline target output voltage
When, the three-dimensional storage wordline is discharged by the discharge circuit.
2. control circuit according to claim 1, it is characterised in that the control circuit further includes：
Controllable target voltage generative circuit, the input of the controllable target voltage generative circuit and the voltage generation circuit
End connection, for producing the wordline target output voltage of the three-dimensional storage.
3. control circuit according to claim 2, it is characterised in that the voltage generation circuit includes：Operational amplifier,
P-type field-effect tube, first resistor and second resistance；
Wherein, the reverse input end of the operational amplifier is connected with the input terminal of the controllable target voltage generative circuit,
The positive input of the operational amplifier is connected with one end of the second resistance, the output terminal of the operational amplifier and institute
The grid connection of p-type field-effect tube is stated, the source electrode of the p-type field-effect tube is connected with voltage output end, the p-type field-effect tube
Drain electrode be connected respectively with the other end of the second resistance and the word line voltage input terminal of the three-dimensional storage, described
One end of one resistance is connected with one end of the second resistance, the other end grounding connection of the first resistor.
4. control circuit according to claim 3, it is characterised in that the first resistor is variable resistor.
5. control circuit according to claim 3, it is characterised in that the voltage generation circuit further includes：3rd resistor；
Wherein, one end of the 3rd resistor is connected with one end of the second resistance, the other end difference of the 3rd resistor
It is connected with the positive input of the operational amplifier and one end of the first resistor.
6. control circuit according to claim 3, it is characterised in that the level sensitive circuit includes：Voltage comparator；
Wherein, the positive input of the voltage comparator is connected with one end of the second resistance, the voltage comparator
Reverse input end is connected with the output terminal of the controllable target voltage generative circuit, the output terminal of the voltage comparator and institute
State discharge circuit connection.
7. control circuit according to claim 5, it is characterised in that the level sensitive circuit includes：Voltage comparator；
Wherein, the positive input of the voltage comparator is connected with one end of the 3rd resistor, the voltage comparator
Reverse input end is connected with the output terminal of the controllable target voltage generative circuit, the output terminal of the voltage comparator and institute
State discharge circuit connection.
8. the control circuit according to claim 6 or 7, it is characterised in that the discharge circuit includes：Adjustable current source；
Wherein, one end of the adjustable current source is connected with the output terminal of the voltage comparator, the adjustable current source it is another
One end is connected with the drain electrode of the p-type field-effect tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711281993.4A CN108039188A (en) | 2017-12-07 | 2017-12-07 | A kind of control circuit of non-volatile three-dimensional storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711281993.4A CN108039188A (en) | 2017-12-07 | 2017-12-07 | A kind of control circuit of non-volatile three-dimensional storage |
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| Publication Number | Publication Date |
|---|---|
| CN108039188A true CN108039188A (en) | 2018-05-15 |
Family
ID=62096021
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711281993.4A Pending CN108039188A (en) | 2017-12-07 | 2017-12-07 | A kind of control circuit of non-volatile three-dimensional storage |
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| CN (1) | CN108039188A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111833946A (en) * | 2019-04-17 | 2020-10-27 | 中国科学院微电子研究所 | Three-dimensional NAND memory word line charging method and control circuit |
| CN112783248A (en) * | 2020-12-31 | 2021-05-11 | 上海艾为电子技术股份有限公司 | Voltage modulator and electronic equipment |
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Application publication date: 20180515 |
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