CN108028190A - The processing method of semiconductor wafer surface protection adhesive tape and semiconductor crystal wafer - Google Patents
The processing method of semiconductor wafer surface protection adhesive tape and semiconductor crystal wafer Download PDFInfo
- Publication number
- CN108028190A CN108028190A CN201580083004.3A CN201580083004A CN108028190A CN 108028190 A CN108028190 A CN 108028190A CN 201580083004 A CN201580083004 A CN 201580083004A CN 108028190 A CN108028190 A CN 108028190A
- Authority
- CN
- China
- Prior art keywords
- adhesive tape
- surface protection
- semiconductor wafer
- wafer surface
- semiconductor
- Prior art date
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- 238000005259 measurement Methods 0.000 description 1
- 210000000713 mesentery Anatomy 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- AYLRODJJLADBOB-QMMMGPOBSA-N methyl (2s)-2,6-diisocyanatohexanoate Chemical compound COC(=O)[C@@H](N=C=O)CCCCN=C=O AYLRODJJLADBOB-QMMMGPOBSA-N 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- DNTMQTKDNSEIFO-UHFFFAOYSA-N n-(hydroxymethyl)-2-methylprop-2-enamide Chemical class CC(=C)C(=O)NCO DNTMQTKDNSEIFO-UHFFFAOYSA-N 0.000 description 1
- YPHQUSNPXDGUHL-UHFFFAOYSA-N n-methylprop-2-enamide Chemical compound CNC(=O)C=C YPHQUSNPXDGUHL-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- ULDDEWDFUNBUCM-UHFFFAOYSA-N pentyl prop-2-enoate Chemical compound CCCCCOC(=O)C=C ULDDEWDFUNBUCM-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesive Tapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The present invention provides the semiconductor wafer surface protection adhesive tape that suppresses to draw in precut method and pre- hidden method and can peel off partially and in the case of not semiconductor crystal wafer is damaged or pollution.The semiconductor wafer surface protection adhesive tape (1) of the present invention is characterized in that, its adhesive phase (4) with substrate resin film (2) and at least single-face side for being formed at above-mentioned substrate resin film (2), above-mentioned substrate resin film (2) has the rigid layer that at least 1 layer of tensile modulus of elasticity is 1~10GPa, the peeling force under 30 ° of peel angle when above-mentioned adhesive phase (4) is radiation-curing type after radiation-curing is 0.1~3.0N/25mm, the peeling force under 30 ° of peel angle when above-mentioned adhesive phase (4) is heated to 50 DEG C when being pressure sensitive is 0.1~3.0N/25mm.
Description
Technical field
The present invention relates to the processing method of semiconductor wafer surface protection adhesive tape and semiconductor crystal wafer.Further in detail
For, relate to be suitable for semiconductor wafer surface protection adhesive tape and the use of the film grinding process of semiconductor crystal wafer
The processing method of the semiconductor crystal wafer of the semiconductor wafer surface protection adhesive tape.
Background technology
In the manufacturing process of semiconductor crystal wafer, pattern formed after semiconductor crystal wafer generally for its thinned thickness, it is right
Semiconductor wafer back implements the processing such as back side grinding, etching.At this time, for the pattern for protecting semiconductor wafer surface
Purpose and the pattern plane paste semiconductor wafer surface protection adhesive tape.Semiconductor wafer surface protection adhesive tape is general
Adhesive phase is laminated on substrate resin film to form, and is used in the back side adhesive layer of semiconductor crystal wafer.
With the progress of high-density installation technology in recent years, there is the requirement of the thin and thick of semiconductor crystal wafer, according to feelings
Condition, it is desirable to carry out the thickness that thin and thick is machined to less than 50 μm.As one of such processing method, there is the back of the body in semiconductor crystal wafer
Before the grinding of face, the groove of prescribed depth is formed in semiconductor wafer surface, then by carrying out back side grinding by chip
The precut method of singualtion (for example, referring to patent document 1).In addition, there is pre- hidden method as described below：Overleaf grinding
Before, by forming modification area to semiconductor crystal wafer internal irradiation laser, then by carrying out back side grinding by chip
Singualtion (for example, referring to patent document 2).
However, deviate (stroke inclined, kerf in order to suppress the chip after singualtion in precut method and pre- hidden method
Shift), it is desirable to which the elasticity modulus of the semiconductor wafer surface protection adhesive tape used is high, if but raising semiconductor crystal wafer table
The elasticity modulus of face protection adhesive tape, then due to becoming difficult to bend, so by semiconductor wafer surface protection adhesive tape
From the sur-face peeling of semiconductor crystal wafer when peel angle become at an acute angle, there are semiconductor crystal wafer is easily damaged or easily draw
The surface attachment semiconductor wafer surface protection risen in semiconductor crystal wafer is partly led with residue glue of the residue of the adhesive of adhesive tape etc.
The problem of body wafer contamination is such.
In addition, in precut method or pre- hidden method, since chip is singulated in the way of grinding, if so half
The fissility of semiconductor wafer protection adhesive tape is poor, then produces the cutting from the back side for fitting in semiconductor crystal wafer when peeling off
Cut band or dicing die bonding film takes the phenomenon (hereinafter referred to as chip stripping) of chip.
Thus, for the semiconductor wafer surface protection adhesive tape suitable for precuting method and pre- hidden method, it is desirable to press down
System draws the breakage and pollution for partially and not including the wafer including chip stripping.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 05-335411 publications
Patent document 2：Japanese Unexamined Patent Publication 2004-001076 publications
The content of the invention
Problems to be solved by the invention
Suppress to draw inclined and energy in the case where being applicable in precut method or pre- hidden method it is therefore an object of the present invention to provide
Enough semiconductor wafer surface protection adhesive tapes peeled off in the case of not semiconductor crystal wafer is damaged or pollution.
Solutions to solve the problem
The above subject is had made intensive studies, it turns out that, by setting rigid layer on substrate resin film, drop at the same time
Peeling force in the state of low peel angle is low, can solve the above subject.The present invention is the invention carried out based on the opinion.
In order to solve the above problems, the feature of the semiconductor wafer surface protection adhesive tape based on the present application exists
In its adhesive with substrate resin film He the radiation-curable at least single-face side for being formed at above-mentioned substrate resin film
Layer, above-mentioned substrate resin film have the rigid layer that at least 1 layer of tensile modulus of elasticity is 1~10GPa, radiate above-mentioned adhesive phase
Line cure after for 4305 defineds of JIS G after the finishing of the water-fast pouncing paper of No. 280 of 6253 defineds of JIS R
Thickness be 1.5mm stainless steel (Steel Use Stainless, SUS) 30 ° of peel angle under peeling force for 0.1~
3.0N/25mm。
In addition, in order to solve the above problems, the spy of the semiconductor wafer surface protection adhesive tape based on the present application
Sign is, it is with substrate resin film and is formed at least single-face side of above-mentioned substrate resin film and the irradiation for passing through radioactive ray
Will not cured adhesive phase, above-mentioned substrate resin film has a rigid layer that at least 1 layer of tensile modulus of elasticity is 1~10GPa, 50
The thickness for 4305 defineds of JIS G after the finishing of the water-fast pouncing paper of No. 280 with 6253 defineds of JIS R at DEG C
The peeling force spent under 30 ° of the peel angle for the stainless steel (Steel Use Stainless, SUS) of 1.5mm is 0.1~3.0N/
25mm。
Above-mentioned semiconductor wafer surface protection is with ring stiffness of the adhesive tape preferably by being measured under following condition (a)~(d)
The repulsive force of per unit width obtained of load load be 2~15mN/mm.
(a) device
Ring stiffness tester (trade name, Toyo Co., Ltd.'s essence mechanism are made made)
(b) ring (test film) shape
Length is 50mm, width 10mm, test film direction are band MD directions
(c) press-in speed of pressure head
3.3mm/sec
(d) intrusion of pressure head
5mm is pressed at the time of pressure head is contacted with ring
In addition, above-mentioned semiconductor wafer surface protection is between the preferably above-mentioned rigid layer of adhesive tape and above-mentioned adhesive phase
Layer is only less than the layer of 1GPa comprising tensile modulus of elasticity, and the thickness of above-mentioned adhesive phase is less than 1GPa with above-mentioned tensile modulus of elasticity
The thickness of layer add up to less than 60 μm.
In addition, above-mentioned semiconductor wafer surface protection with the preferably above-mentioned adhesive phase of adhesive tape in chemical mechanical grinding
In slurry dipping 24 it is small when after insoluble component relative to the ratio before being impregnated in above-mentioned slurry be more than 75%, the slurry
Material is that the average grain diameter for disperseing 14 weight % in the sodium hydrate aqueous solution of pH12 obtains for the cataloid of 50nm
's.
In addition, the above-mentioned preferably above-mentioned adhesive phase of semiconductor wafer surface protection adhesive tape contains has alkene on side chain
Belong to unsaturated group radioaction resin, and comprise mean for irradiation radioactive ray and with above-mentioned radioaction tree
Fat reacts and makes the modifying agent that peeling force declines.
In addition, the above-mentioned preferably above-mentioned modifying agent of semiconductor wafer surface protection adhesive tape is non-organic silicon systems.
In addition, in order to solve the above problems, the manufacture method of the semiconductor crystal wafer based on the present application is characterized in that,
It includes following process：(a) preset lines are blocked along semiconductor crystal wafer, is formed from the surface of above-mentioned semiconductor crystal wafer less than above-mentioned
The process of the groove of the thickness of semiconductor crystal wafer；(b) in the above-mentioned semiconductor wafer surface formed with above-mentioned groove, it is bonded institute of the present invention
The process for the semiconductor wafer surface protection adhesive tape stated；(c) by the way that above-mentioned semiconductor wafer back is ground, so that
By the process of above-mentioned semiconductor crystal wafer singualtion.
In addition, in order to solve the above problems, the manufacture method of the semiconductor crystal wafer based on the present application is characterized in that,
It includes following process：(a) the above-mentioned semiconductor crystal wafer internal irradiation laser blocked in preset lines to semiconductor crystal wafer is passed through
And the process for forming modification area；(b) before or after the process of above-mentioned (a), the present invention is bonded in semiconductor wafer surface
The process of the semiconductor wafer surface protection adhesive tape；(c) by the way that above-mentioned semiconductor wafer back is ground, from
And by the process of above-mentioned semiconductor crystal wafer singualtion.
In addition, the manufacture method of above-mentioned semiconductor crystal wafer can also include progress chemical grinding in the process of above-mentioned (c)
Process.
Invention effect
Semiconductor wafer surface protection adhesive tape according to the present invention, is being applicable in precut method or pre- hidden method
In the back side grinding process of semiconductor crystal wafer, drawing partially for the semiconductor chip through singualtion can be suppressed, while can will
It is processed in the case of semiconductor crystal wafer breakage or pollution.
Brief description of the drawings
Fig. 1 is the structure for schematically showing the semiconductor wafer surface protection adhesive tape described in embodiments of the present invention
Sectional view.
Fig. 2 is to schematically show the back of the body for having used the semiconductor wafer surface protection adhesive tape described in embodiments of the present invention
The sectional view of face grinding process.
Fig. 3 is to schematically show the back of the body for having used the semiconductor wafer surface protection adhesive tape described in embodiments of the present invention
The sectional view of face grinding process.
Fig. 4 is to schematically show the back of the body for having used the semiconductor wafer surface protection adhesive tape described in embodiments of the present invention
The sectional view of cutting action after the grinding process of face.
Fig. 5 is to schematically show the back of the body for having used the semiconductor wafer surface protection adhesive tape described in embodiments of the present invention
The sectional view of cutting action after the grinding process of face.
Fig. 6 is to schematically show the back of the body for having used the semiconductor wafer surface protection adhesive tape described in embodiments of the present invention
The sectional view of extension process after the grinding process of face.
Fig. 7 is to schematically show the back of the body for having used the semiconductor wafer surface protection adhesive tape described in embodiments of the present invention
The sectional view of pickup process after the grinding process of face.
Fig. 8 is the circuit pattern of the analog semiconductor wafer used in the evaluation for represent embodiment and comparative example and is arranged at cut-out
The position of the simulation difference of height of the groove of predetermined position, shape, the sectional view of size.
Fig. 9 is the explanatory drawin in the observation place of the kerf width in the evaluation for represent embodiment and comparative example.
Figure 10 is for 30 ° of the peel angle to the semiconductor wafer surface protection adhesive tape described in embodiments of the present invention
Under peeling force the explanatory drawin that illustrates of assay method.
Embodiment
Hereinafter, embodiments of the present invention are described in detail based on attached drawing.Fig. 1 is the reality for schematically showing the present invention
Apply the sectional view of the structure of the semiconductor wafer surface protection adhesive tape 1 described in mode.
As shown in Figure 1, the semiconductor wafer surface protection described in present embodiment has base material with adhesive tape 1
Resin film 2, adhesive phase 4 is provided with least single-face side of substrate resin film 2.On adhesive phase 4, as needed can also
Demoulding process face by stripping film (not shown) of the surface through demoulding processing is laminated in the way of being located at 4 side of adhesive phase.
(substrate resin film 2)
As the present invention semiconductor wafer surface protection adhesive tape 1 substrate resin film 2, can use known plastics,
Rubber etc..In the case that substrate resin film 2 is particularly the composition that radiation-curable is used in adhesive phase 4, selection should
The film that the transmittance of the radioactive ray of the cured wavelength of composition is good is preferable.In addition, here, so-called radioactive ray are, for example, will be ultraviolet
For light as line or the such ionization property radioactive ray general name of laser or electron ray, below, by their general names
Referred to as radioactive ray.
As such 2 selectable example of substrate resin film, there is polyethylene, polypropylene, ethylene-propylene copolymer, poly-
Butene-1, poly- 4- methyl 1- amylenes, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-propylene
The homopolymer or copolymer of the alpha-olefins such as sour methyl terpolymer, ethylene-acrylic acid copolymer, ionomer or their mixing
The engineering plastics such as thing, polyethylene terephthalate, polyethylene naphthalate, makrolon, polymethyl methacrylate
The thermoplastic elastomer (TPE) such as material, polyurethane, styrene-ethylene-butadiene or amylene based copolymer, polyamide-polyol copolymer,
And their mixture.In addition it is also possible to use film obtained from they are made multilayer.
The substrate resin film 2 of semiconductor wafer surface protection adhesive tape 1 described in present embodiment is for precuting
A deviator is drawn in order to reduce in the case of method and pre- hidden method, in order to suppress half in the case of for common back side grinding process
The warpage of semiconductor wafer 5 (with reference to Fig. 2), comprising the rigid layer that tensile modulus of elasticity is 1~10GPa as necessary key element.As
The resin of the rigid layer is formed, polyester mesentery etc. such as polyethylene terephthalate can be included.
But if having rigid layer, since bendability declines, used so becoming difficult to protect semiconductor wafer surface
Adhesive tape 1 is peeled off, and becomes breakage, the residue glue for easily causing semiconductor crystal wafer 5 when peeling off.From this point, the thickness of rigid film
It is appropriate to spend for 10~100 μm, is preferably 10~50 μm, more preferably 20~40um.And then as the index of bendability
Repulsive force in ring stiffness is preferably 2~below 15mN/25mm, more preferably 5~13mN/25mm.Wherein, the row in ring stiffness
Repulsion is the repulsive force for the per unit width obtained by the load load of the ring stiffness measured under following condition (a)~(d).
(a) device
Ring stiffness tester (trade name, Toyo Co., Ltd.'s essence mechanism are made made)
(b) ring (test film) shape
Length is 50mm, width 10mm, test film direction are band MD directions
(c) press-in speed of pressure head
3.3mm/sec
(d) intrusion of pressure head
5mm is pressed at the time of pressure head is contacted with ring
In addition, using the substrate resin film 2 that polyolefin layer is laminated with the single side of rigid layer or two sides, this is from semiconductor
Imbedibility of the imparting, the bumps on 5 surface of semiconductor crystal wafer of resiliency during the back side grinding of wafer 5 into adhesive phase 4
Improve so the adaptation of the heat sealing agent with being used when semiconductor wafer surface protection adhesive tape 1 is peeled off raising this
From the viewpoint of sample it is also preferred that.As the resin of the polyolefin layer suitable for stacking, preferably low density polyethylene (LDPE), ethyl vinyl acetate
Vinyl ester copolymers, polypropylene etc..
As the method that each layer stackup is formed substrate resin film 2, it can be applicable in and for example use adhesive, bonding agent
Deng fitting or coextrusion etc. known to method.
For the surface for setting adhesive phase 4 side of substrate resin film 2, in order to improve the adaptation with adhesive phase 4,
It can also be appropriately carried out sided corona treatment, the processing such as prime coat is set.In addition, it is also preferred that substrate resin film 2 is not provided with gluing
The surface of 4 side of mixture layer is embossed processing or lubricant applying, thus, it is possible to which the surface protection for obtaining the present invention is used and glued
Preventing adhesion and other effects when crossed belt is taken care of.
(adhesive phase 4)
As shown in Figure 1, the semiconductor wafer surface protection described in present embodiment with adhesive tape 1 in substrate resin film
Formed with adhesive phase 4 on 2.
As long as form adhesive phase 4 adhesive composition can fully be kept in the grinding of semiconductor crystal wafer 5 with
The adaptation of semiconductor crystal wafer 5, will not produce semiconductor crystal wafer 5 in the stripping of semiconductor wafer surface protection adhesive tape 1
Damaged composition be not particularly limited, but the group that the peeling force under low angle as preferably selecting following records is lower
Compound.The polymer (adhesive base resin) of main component is preferably (methyl) acrylic resin.By using (methyl) third
Polymer of the olefin(e) acid resin as main component, the control of bonding force become easy, can control elasticity modulus etc..
As the adhesive composition for forming adhesive phase 4, from the viewpoint of fissility, preferably using radiation-curing
The adhesive of type.In order to make the resin such as its curing, adhesive base resin that there is olefinic unsaturated group by the irradiation of radioactive ray
Group (carbon-to-carbon double bond of non-aromatic), or in adhesive base resin and with have ethylenically unsaturated group compound.
In the present invention, the resin such as adhesive base resin is used has the resin of ethylenically unsaturated group also from fissility on side chain
From the viewpoint of particularly preferably.Furthermore it is preferred that contain Photoepolymerizationinitiater initiater and crosslinking agent in adhesive composition, in order to adjust
The elasticity modulus or bonding force of adhesive phase 4, preferably comprise crosslinking agent.
, will not be cured so-called by the irradiation of radioactive ray using as the adhesive composition for forming adhesive phase 4
Pressure sensitive adhesive in the case of, instead of the irradiation of radioactive ray, can also pass through and apply such as 50 DEG C or so when peeling off
Heat and decline peeling force.As the adhesive of such pressure sensitive, can use comprising by (methyl) alkyl acrylate
Component units of monomer derived and by acrylic acid 2- hydroxy propyl esters, (methyl) acrylic acid 2- hydroxy methacrylates and/or acrylic acid 2- hydroxyls
Component units derived from the base butyl ester and copolymer comprising the Component units as derived from (methyl) alkyl acrylate monomer leads to
Cross the adhesive that isocyanate compound crosslinking forms.
[resin with ethylenically unsaturated group]
Resin with ethylenically unsaturated group can be arbitrary resin, but preferably (methyl) acrylic resin.As resin
In the iodine number of the index of the amount of double bond that contains be preferably 0.5~20.The iodine number is more preferably 0.8~10.If iodine number for 0.5 with
On, then the reducing effect of the bonding force after radioactive ray irradiation can be obtained, if iodine number is less than 20, can prevent excessive put
Actinic radiation-curable.In addition, the glass transition temperature (Tg) of the resin with ethylenically unsaturated group is preferably -70 DEG C~0 DEG C.If
Glass transition temperature (Tg) is more than -70 DEG C, then increases relative to the hot heat resistance of the manufacturing procedure with semiconductor crystal wafer 5
Add.
Resin with ethylenically unsaturated group can be the resin of any operation and manufacture, but preferably make with olefinic not
There is functional group (α) in the compound and side chain of saturated group and the functional group (β) reacted with the functional group (α) in above-mentioned resin
(methyl) reactive acrylic resin, on the side chain of (methyl) acrylic resin import ethylenically unsaturated group method.
Can be arbitrary group as ethylenically unsaturated group, but preferably (methyl) acryloyl group, (methyl) acryloyl
Epoxide, (methyl) Acryloyl amino, pi-allyl, 1- acrylic, vinyl (including styrene or substituted phenylethylene), it is more excellent
Select (methyl) acryloyl group, (methyl) acryloxy.As the functional group (β) reacted with functional group (α), carboxylic can be included
Base, hydroxyl, amino, sulfydryl, cyclic acid anhydride base, epoxy group, isocyanate group etc..
Here, a functional group in functional group (α) and functional group (β) is carboxyl, hydroxyl, amino, sulfydryl or ring-type
In the case of anhydride group, another functional group can include epoxy group, isocyanate group, be cyclic acid anhydride base in a functional group
In the case of, another functional group can include carboxyl, hydroxyl, amino, sulfydryl.In addition, it is epoxy group in a functional group
In the case of, another functional group can also be epoxy group.
(methyl) acrylic resin with functional group (α) can be by making (methyl) with functional group (α) on side chain
Acrylate, acrylic acid or (methyl) acrylamide polymerization and obtain.As functional group (α), carboxyl, hydroxyl, ammonia can be included
Base, sulfydryl, cyclic acid anhydride base, epoxy group, isocyanate group etc., preferably carboxyl, hydroxyl, particularly preferred hydroxyl.
As such monomer, acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, adjacent benzene two can be included
Formic acid, acrylic acid 2- hydroxy alkyls esters, methacrylic acid 2- hydroxy alkyls esters, diol mono-acrylate class, glycol list first
Base esters of acrylic acid, N hydroxymethyl acrylamide, N- methylol methacrylamides, allyl alcohol, acrylic acid N- alkyl amino second
Esters, methacrylic acid N- alkyl amino ethyl esters class, acrylic amide, methacryl amine, maleic anhydride, itaconic anhydride,
Fumaric acid anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether,
By a part for the isocyanate group of polyisocyanate compounds with hydroxyl or carboxyl and radiation-curable carbon-to-carbon double bond
Monomer carry out material etc. obtained from urethane.In them, preferably acrylic acid, methacrylic acid, acrylic acid 2- hydroxyls
Base alkyl esters, methacrylic acid 2- hydroxy alkyls esters, glycidyl acrylate, glycidyl methacrylate, more
It is preferred that acrylic acid, methacrylic acid, acrylic acid 2- hydroxy alkyls esters, methacrylic acid 2- hydroxy alkyl esters, further excellent
Select acrylic acid 2- hydroxy alkyls esters, methacrylic acid 2- hydroxy alkyl esters.
Resin with ethylenically unsaturated group preferably together with above-mentioned monomer with other lists such as (methyl) acrylate
The copolymer of body.As (methyl) acrylate, methyl acrylate, ethyl acrylate, n-propyl, propylene can be included
Sour N-butyl, isobutyl acrylate, acrylic acid n-pentyl ester, the just own ester of acrylic acid, n-octyl, Isooctyl acrylate monomer, third
Olefin(e) acid 2- ethylhexyls, dodecylacrylate, decyl acrylate, Hexyl 2-propenoate and metering system corresponding with them
Acid esters.It can also be two or more that (methyl) acrylate, which can be a kind, but preferably be less than 5 by the carbon number in alcohol portion
(methyl) acrylate is used in combination with (methyl) acrylate that carbon number is 6~12.Resin with ethylenically unsaturated group
It is preferred that copolymer obtained from also (methyl) acrylic acid is further copolymerized in addition to (methyl) acrylate.
Resin with ethylenically unsaturated group, the particularly resin with ethylenically unsaturated group polymerisation can be with
It is any one of polymerisation in solution, emulsion polymerization, polymerisation in bulk, suspension polymerisation.Make with ethylenically unsaturated group and with it is upper
State the compound of the functional group (β) of functional group (α) reaction in resin, (methyl) propylene with having functional group (α) on side chain
When acid resin reacts, reacted by making one excessive, the functional group of remained unreacted, can be adjusted to desired binding
Property and elasticity modulus.
It is organic usually using the azo such as α, α '-azobis isobutyronitrile double system, benzoyl peroxides etc. as polymerization initiator
The free-radical generating agents such as peroxide system.At this time, catalyst, polymerization inhibitor can be used together as needed, by adjusting polymerization temperature
And polymerization time, the resin of desired molecular weight can be obtained.In addition, on adjusting molecular weight, preferably using mercaptan, tetrachloro
Change the solvent of carbon system.
The average molecular weight of resin with ethylenically unsaturated group is preferably 200,000~1,500,000 or so, and more preferably 70
Ten thousand~1,200,000.By reducing low molecular weight compositions, 5 surface contamination of semiconductor crystal wafer can be suppressed, preferably such as molecular weight is 10
Less than ten thousand molecule is set as that overall 10% is such as the following.If molecular weight is more than 1,500,000, it is likely that in synthesis and during application
Gelation.If further, since the resin with ethylenically unsaturated group with hydroxyl value become 5~100mgKOH/g OH bases,
By reducing the bonding force after radioactive ray irradiation, it can further reduce band and peel off undesirable danger, it is advantageous to.
The compound of functional group (β) to being reacted with ethylenically unsaturated group and with functional group (α) illustrates.Olefinic
Preferably the group of explanation, preferable scope are also identical before for unsaturated group.The functional group (β) reacted with functional group (α) can arrange
Enumerate the group illustrated before.As functional group (β), particularly preferred isocyanate group.
As the compound for the functional group (β) reacted with ethylenically unsaturated group and with functional group (α), it can enumerate and provide
There are the compound of the monomer of functional group (α), (methyl) acrylate that there is isocyanate group in alcohol portion, preferably have in alcohol portion
(methyl) acrylate of isocyanate group.As (methyl) acrylate in alcohol portion with isocyanate group, preferably in alcohol
The end in portion has (methyl) acrylate of isocyanate group, and the carbon number in addition to the isocyanate group in alcohol portion is preferably
2~8, the alcohol of the preferred straight chained alkyl in alcohol portion.As (methyl) acrylate in alcohol portion with isocyanate group, can preferably enumerate
Go out such as acrylic acid 2- isocyanato ethyls, methacrylic acid 2- isocyanato ethyls.
[crosslinking agent]
As crosslinking agent, preferably Polyisocyanate esters, melamine resin or the epoxy with the epoxy group of more than 2
Compound, particularly preferred Polyisocyanate esters.Crosslinking agent may be used singly or in combination of two or more.Crosslinking agent passes through
Resinous polymer is crosslinked, the cohesiveness of adhesive can be improved after adhesive coating.
As Polyisocyanate esters, such as hexamethylene diisocyanate, 2,2,4- trimethyls-hexa-methylene can be included
Diisocyanate, isophorone diisocyanate, 4,4 '-dicyclohexyl methyl hydride diisocyanate, 2,4 '-dicyclohexyl methyl hydride two
Isocyanates, lysine diisocyanate, lysine triisocyanate, 4,4 '-methyl diphenylene diisocyanate, toluene support two
Isocyanates, xylylene diisocyanate, 4,4 '-diphenyl ether diisocyanate, 4,4 '-(double (the 4- phenoxy group benzene of 2,2-
Base) propane) diisocyanate etc., specifically, as commercially available product, Coronate L (Nippon can be used
Polyurethane Industry Co., Ltd. system) etc..
Melamine resin can use Nikalac MX-45 (the SANWA Chemical as commercially available product
Co., Ltd. systems), Melan (Hitachi Chemical Co., Ltd.'s system) etc..And then as epoxy resin, TETRAD- can be used
X (Mitsubishi chemical Co., Ltd's system) etc..
The additive amount of crosslinking agent is preferably set to 0.1 relative to 100 mass parts of resin with ethylenically unsaturated group~
20 mass parts, are further preferably set as 1.0~10 mass parts, the functional group number phase with the resin with ethylenically unsaturated group
Adapt to, in addition, in order to obtain it is desired bonding physical property, elasticity modulus and suitably adjust its amount.The amount of crosslinking agent is less than 0.1 matter
When measuring part, there are cohesiveness to improve the insufficient tendency of effect, if more than 20 mass parts, due to the cooperation and painting in adhesive
Curing reaction hastily carries out in cloth operation, there is the tendency to form cross-linked structure, it is possible to damage workability.
[Photoepolymerizationinitiater initiater]
In the case where selected radiation-curing type adhesive is as adhesive phase 4, photopolymerization can be included as needed and is triggered
Agent.For Photoepolymerizationinitiater initiater, as long as by the radioactive ray of transmissive substrate and the Photoepolymerizationinitiater initiater that reacts, then without special
Limitation, can use previously known Photoepolymerizationinitiater initiater.Such as benzophenone, 4,4 '-dimethylamino hexichol can be included
Benzophenone, acetophenone, the diethoxybenzenes such as ketone, 4,4 '-diethylamino benzophenone, 4,4 '-dichloro benzophenone
Anthraquinones, 2-chlorothioxanthone, benzoin ethyl ether, the benzoins such as the acetophenones such as ethyl ketone, 2- ethyl hydrazine, tert-butyl group anthraquinone are different
Propyl ether, benzil, 2,4,5- triarylimidazoles dimer (lophine (lophine) dimer), acridine based compound, acyl group
Phosphinoxides etc., they may be used singly or in combination of two or more.The additive amount of Photoepolymerizationinitiater initiater relative to
100 mass parts of resin of ethylenically unsaturated group are preferably set to 0.1~10 mass parts, are more preferably set as 0.5~5 mass
Part.
[other additives]
Bonding imparting agent, bonding regulator, surfactant etc. can be coordinated as needed in adhesive phase 4 or be modified
Agent etc..In addition it is also possible to it is properly added inorganic compound filler.In the present invention, modifying agent is added also from the viewpoint of fissility
Set out preferably.Modifying agent can include organo-silicon compound, fluorine system compound, compound containing chain alkyl etc., pass through addition
Decline the peeling force under low angle, and by rising relative to the contact angle of water, dust intrusion can be suppressed and suppressed.In order to
Preventing transfer of the modifying agent to 5 surface of semiconductor crystal wafer, modifying agent is preferably the compound with ethylenically unsaturated group, into
And adhesive base resin is more preferably the resin on side chain with ethylenically unsaturated group.As unsaturated with olefinic
The modifying agent of group, specifically, as commercially available product, can include the Ebecryl 360 as organic silicon acrylic ester
(DAICEL-ALLNEX LTD. systems) or the Megaface RS-72-K (Dainippon Ink Chemicals's system) as fluorine system surface modifier
Deng.From the viewpoint of the influence to 5 surface of semiconductor crystal wafer, fluorine system compound is more preferably.
Adhesive phase 4 for example can be such that it turns after drying by the way that above-mentioned adhesive composition is coated on stripping film
Print on substrate resin film 2 to be formed.The thickness of adhesive phase 4 is preferably 1~60 μm.
Wherein, in precut method and pre- hidden method, in being ground at the back side of semiconductor crystal wafer, formed in chip chamber
Gap, if so carrying out the mill of CMP (chemical mechanical polishing, chemical mechanical grinding) or etching etc
Milled processed after cutting, then worry that semiconductor crystal wafer can be by slurry contamination, or semiconductor wafer surface protection adhesive tape
Adhesive is corroded by slurry, the adhesive contamination that semiconductor crystal wafer is become fragile.And then in precut method and pre- hidden method, by
Semiconductor crystal wafer 5 is changed by chip 11 in the way in grinding, is drawn so easily being produced compared with common grinding by grinding dust
The pollution to 5 surface of semiconductor crystal wafer risen.
Therefore, the adaptation of surface protection band and 5 surface of semiconductor crystal wafer is more required.But it is informed in commonly known
It is such to make to improve adaptation in the thickening method of adhesive phase 4, due in precut method or pre- hidden method chips
11 vibrate in grinding along depth direction, on the contrary in the state for easily producing dust intrusion.Thus, adhesive phase 4 is relatively thin anti-
And be adapted to, more preferably 5~30 μm, it is low only comprising tensile modulus of elasticity in the layer being formed between rigid layer and adhesive phase 4
When the layer of 1GPa, the thickness of adhesive phase 4 is preferably 5~60 with the total of the thickness of layer of the tensile modulus of elasticity less than 1GPa
μm, more preferably 5~30 μm.Due to low only comprising tensile modulus of elasticity to be formed at the layer between rigid layer and adhesive phase 4
In the situation of the layer of 1GPa, so when with multiple rigid layers, refer to be formed at the rigid layer closest to adhesive phase 4 with gluing
Layer between mixture layer 4 only includes the situation of layer of the tensile modulus of elasticity less than 1GPa.It is less than 1GPa as tensile modulus of elasticity
Layer, the layer of composition substrate resin film in addition to rigid layer can be included, for multiple layers of substrate resin film patch will to be formed
Adhesive layer of conjunction etc..
In addition, the storage elasticity modulus of adhesive is 0.01~0.1MPa preferably at 25 DEG C, more preferably it is at 50 DEG C
0.02~0.1MPa.By the way that the storage elasticity modulus of adhesive phase 4 is set as the scope, even if the thickness of adhesive phase 4 is small
Also easily prevent dust from invading, also be difficult to cause residue glue during stripping, chip to peel off at this time.In addition, adhesive phase 4 can also be
The composition that multiple adhesive phases 4 are laminated.
In addition, after when dipping 24 is small in the slurry that adhesive phase 4 uses in the chemical grinding at the back side of semiconductor crystal wafer 5
Insoluble component relative to the ratio (gel fraction) before being impregnated in slurry be preferably more than 75%, more preferably 90% with
On.By the way that adhesive phase 4 is set as more than 75% relative to the gel fraction of slurry, adhesive can be suppressed by from through list
The slurry invaded between the chip 11 of piece corrodes and pollutes crystal column surface.Slurry can for example be formed in the sodium hydroxide water of pH12
The average grain diameter for disperseing 14 weight % in solution is the slurry of chemical mechanical grinding obtained from the cataloid of 50nm.
In addition, the semiconductor wafer surface protection adhesive tape 1 based on the present invention is radiation-curing type in adhesive phase 4
Adhesive phase 4 in the case of radioactive ray irradiation after, adhesive phase 4 for pressure sensitive adhesive phase 4 in the case of 50
Under DEG C heating condition, peel angle be 30 °, draw speed be 20mm/min when peeling force be necessary for 0.1~3.0N/
25mm, is preferably 0.5~1.8N/25mm.Even with feelings of the adhesive phase 4 as adhesive phase 4 of radiation-curing type
Under condition, it can also decline peeling force by being peeled off after radiation-curing under 50 DEG C of heating conditions, in this case, referring to
Peeling force under 50 DEG C of heating conditions.If peeling force is less than 0.1N/25mm, the back side of semiconductor crystal wafer 5 is ground and
After monolithic chemical conversion chip 11, it is possible to deviate in the conveyance chips 11 into subsequent processing, if more than 3.0N/25mm,
Then when semiconductor wafer surface protection adhesive tape 1 is peeled off, become easily to produce the back side by fitting in semiconductor crystal wafer 5
Cutting belt 6 or dicing die bonding film take the chip of chip 11 and peel off or semiconductor wafer surface protection adhesive tape 1
The residue of adhesive is attached to the residue glue on the surface of semiconductor crystal wafer 5.
Semiconductor wafer surface protection with adhesive tape 1 from the stripping on semiconductor crystal wafer 5 be by adhesion type or heat-sealing type
Stripping the end of semiconductor wafer surface protection adhesive tape 1 is adhered to band, peeled off from end.In the first of stripping
Phase, since semiconductor wafer surface protection is at an acute angle with adhesive tape 1 and the stripping of semiconductor crystal wafer 5, so with the stripping on face
It is close, become very big peeling force compared with 90 ° of strippings etc..For example, the semiconductor wafer surface of comparative example 1 described later is protected
For shield uses adhesive tape 1, although the peeling force under 90 ° of strippings is 0.4N/25mm, the peeling force under 30 ° of strippings is 3.6N/
25mm, if the stripping for the semiconductor crystal wafer 5 for the state from thin semiconductor crystal wafer 5 after grinding or through chip 11 change,
Then cause the risk that wafer crackle or chip are peeled off very high.Especially because substrate resin film 2 has rigid layer, so bending
Property is poor, therefore, it is difficult to seize stripping initial part, therefore is easier to cause wafer crackle etc..
Wherein, 30 ° of so-called peel angle in the present invention is relative to the angle of the draw direction of adherend, actual quilt
Viscous thing is with semiconductor wafer surface protection with the peel angle of adhesive tape 1 according to semiconductor wafer surface protection adhesive tape 1
Rigidly change.
Peeling force under 30 ° of peel angle can obtain in the following way：Bonded by semiconductor wafer surface protection
Band 1 gathers the test film of width 25mm × length 300mm, which is ground with No. 280 of JIS R6253 defineds water-fast
The thickness for grinding 4305 defineds of JIS G after paper finishing is the stainless steel (Steel Use Stainless, SUS) of 1.5mm
On plate, to above-mentioned test film with the rubber rollers of 3 reciprocal crimping 2kg, pass through radioactive ray when adhesive is radiation-curing type
Make its cure after place 1 it is small when after, when adhesive is pressure sensitive in the state of SUS plates are heated to 50 DEG C, use measure
Value falls into the cupping machine for being suitable for JIS B 7721 of 15~85% scope of its capacity, is 20mm/ in draw speed
Min, atmosphere temperature are 25 DEG C, relative humidity is peeled off under conditions of being 50%, and measure peel angle θ is under 30 ° (with reference to Figure 10)
Peeling force.
In order to reduce the peeling force under 30 ° of peel angle, the bending of semiconductor wafer surface protection adhesive tape 1 is reduced
Property, not have in the stick portion with adherend partly to extend etc. be important.Specifically, it is such as above-mentioned on bendability
Like that, the rigidity and thickness of substrate resin film 2 are adjusted, on local elongation, the thickness on rigid layer or modification can be passed through
The addition of layer, other adhesives form composition etc. to adjust.
(stripping film)
In addition, for the protection adhesive tape of the present invention, stripping film as needed is arranged on adhesive phase 4.Peel off
Film is also referred to as membrane or peel ply, release liner, in order to protect the purpose of adhesive phase 4, in addition in order to become adhesive
Smooth purpose and set.As the constituent material of stripping film, polyethylene, polypropylene, poly terephthalic acid second two can be included
The synthetic resin films such as alcohol ester or paper etc.., can also be as needed to the table of stripping film in order to improve the fissility from adhesive phase 4
Implement the lift-off processings such as organosilicon processing, chain alkyl processing, fluorine processing in face.In addition, as needed, adhesive phase in order to prevent
The exposure of 4 ultraviolet by ambient ultraviolet line etc. unintentionally is reacted, it is also preferred that implementing antiultraviolet processing.The thickness of stripping film
Degree is usually 10~100 μm, is preferably 25~50 μm or so.
<Purposes>
As the usage of the wafer processing band 1 of the present invention, partly leading for precut method or pre- hidden method can used
The manufacture method of body wafer 5, for example following semiconductor crystal wafer 5 manufacture method (A)~(B) in suitably use.
The manufacture method (A) of semiconductor crystal wafer 5 be comprising following process semiconductor crystal wafer 5 manufacture method, the work
Sequence is as described below：
(a) blocking in preset lines in semiconductor crystal wafer 5, forms from the surface of above-mentioned semiconductor crystal wafer 5 and is less than above-mentioned semiconductor
The process of the groove 7 of the thickness of wafer 5；
(b) on 5 surface of above-mentioned semiconductor crystal wafer formed with above-mentioned groove 7, it is bonded above-mentioned semiconductor wafer surface protection and uses and glue
The process of crossed belt 1；And
(c) by the way that above-mentioned 5 back side of semiconductor crystal wafer is ground, so that the process by above-mentioned 5 singualtion of semiconductor crystal wafer.
The manufacture method (B) of semiconductor crystal wafer 5 be comprising following process semiconductor crystal wafer 5 manufacture method, its feature
It is, the process is as described below：
(a) by forming modification to the 5 internal irradiation laser of above-mentioned semiconductor crystal wafer blocked in preset lines of semiconductor crystal wafer 5
The process in region；
(b) before or after the process of above-mentioned (a), it is bonded above-mentioned semiconductor wafer surface on 5 surface of semiconductor crystal wafer and protects
The process of shield adhesive tape 1；And
(c) by the way that above-mentioned 5 back side of semiconductor crystal wafer is ground, so that the process by above-mentioned 5 singualtion of semiconductor crystal wafer.
<Application method>
Then, to the processing of the application method, i.e. semiconductor crystal wafer 5 of the semiconductor wafer surface protection adhesive tape 1 of the present invention
One example of method illustrates.First, as shown in Figure 2, using blade (not shown) or laser from semiconductor
The face side of wafer 5 formed on semiconductor crystal wafer 5 with the groove 7 of the equal above depth of end article thickness (fluting process) after,
On the surface of the semiconductor crystal wafer 5 formed with circuit pattern, the adhesive phase of laminated semiconductor crystal column surface protection adhesive tape 1
4 (protection band bonding process).
Then, as shown in (A) of Fig. 3, for the semiconductor crystal wafer 5 formed with groove 7, by with grinding attachment
The grinding process at the 8 grinding back sides, as shown in (B) of Fig. 3, carries out being ground to arrival slot 7.Thus, semiconductor crystal wafer 5
It is singulated into chip 11.As needed, for the purpose of flexural strength after grinding process to improve semiconductor crystal wafer 5 etc. and
It is ground or etching process.As grinding, chemical mechanical grinding (CMP) can be used.At this time, if adhesive phase 4 it is opposite
Be 75% in the gel fraction of slurry, then can suppress adhesive corroded from the slurry that is invaded between the chip 11 through singualtion and
Pollute crystal column surface.
After grinding, grinding process, as shown in Figure 4, paste cutting belt 6 or dicing die bonding film
Annular frame 9 is bonded together in the back side of semiconductor crystal wafer 5, while in the peripheral part of cutting belt 6.Afterwards, as shown in Figure 5 that
Sample, semiconductor wafer surface protection adhesive tape 1 is peeled off.At this time, the semiconductor wafer surface protection described in present embodiment
With adhesive tape 1 since the peeling force under peel angle is 30 °, draw speed is 20mm/min is 0.1~3.0N/25mm, so
By the grinding of the back side of semiconductor crystal wafer 5 and after monolithic chemical conversion chip 11, can reduce in the conveyance chips to subsequent processing
11 occur to deviate and (draw inclined), while can reduce the damaged generation of the wafer including being peeled off comprising chip.
Afterwards, for example, as shown in Figure 6, the cutting belt 6 for being fitted with semiconductor crystal wafer 5 and annular frame 9 is carried
It is placed on the estrade (not shown) of expanding unit, in the state of annular frame 9 is fixed, makes the liftout component 10 of expanding unit
Rise, cutting belt 6 is extended.
Then, as shown in Figure 7, after by being ejected chip 11 with eject pin 12 from the rear side of cutting belt 6
Adsorbed by collet 13 to pick up, semiconductor chip 11 can be obtained.
In above-mentioned, the semiconductor wafer surface protection for having used precut method is carried out with the application method of adhesive tape 1
Illustrate, but precut method can also be replaced using pre- hidden method.Using in the case of pre- hidden method, instead of process of slotting,
Implement by forming the modification area formation process of modification area to 5 internal irradiation laser of semiconductor crystal wafer.Modification area shape
It can also implement into process after protection band bonding process.
<Embodiment>
Hereinafter, the present invention is further described in detail based on embodiment, but the present invention is not limited to these embodiments.
Adhesive composition is prepared as described below, and semiconductor wafer surface protection adhesive tape is made by the following method,
Evaluate its performance.
(preparation of adhesive phase composition)
[adhesive phase composition 2A]
Relative to including 83 mass parts of 2-EHA, 16 mass parts of acrylic acid 2- hydroxy esters, 1 mass of methacrylic acid
00 mass parts of copolymer 1 of part, make 10 mass parts of the methacryloyloxyethyl acyloxy ethyl ester reaction as radioactive ray reactive group,
Add Coronate L (trade name, Nippon Polyurethane the Industry Co., Ltd. as polyisocyanate
System) 0.8 mass parts, SPEEDCURE BKL (trade name, DKSH Japan K.K. systems) 5.0 mass as Photoepolymerizationinitiater initiater
Part simultaneously mixes, and obtains adhesive composition 2A.
[adhesive phase composition 2B]
Except addition 2 mass parts as fluorine system modifying agent Megaface RS-72-K (trade name, Dainippon Ink Chemicals's system) with
Outside, operated in the same manner as adhesive composition 2A, obtain adhesive composition 2B.
[adhesive phase composition 2C]
Except Ebecryl 360 (trade name, DAICEL-ALLNEX of 0.2 mass parts of addition as silicon-type modifying agent
LTD. make) beyond, operated in the same manner as adhesive composition 2A, obtain adhesive composition 2C.
[adhesive phase composition 2D]
Relative to including 80 mass parts of 2-EHA, 19 mass parts of acrylic acid 2- hydroxy esters, 1 mass of methacrylic acid
00 mass parts of copolymer 1 of part, add 80 mass parts of urethane acrylate oligomer, the amino first of 3 functions of 5 functions
20 mass parts of acid esters acrylate oligomer, Coronate L (trade name, Nippon as polyisocyanate
Polyurethane Industry Co., Ltd. system) 5.0 mass parts, the SPEEDCURE BKL (business as Photoepolymerizationinitiater initiater
The name of an article, DKSH Japan K.K. systems) 4.0 mass parts and mix, obtain adhesive composition 2D.
[adhesive phase composition 2E]
Relative to including 80 mass parts of 2-EHA, 19 mass parts of acrylic acid 2- hydroxy esters, 1 mass of methacrylic acid
00 mass parts of copolymer 1 of part, add 100 mass parts of urethane acrylate oligomer, the amino of 3 functions of 5 functions
30 mass parts of formic acid esters acrylate oligomer, Coronate L (trade name, Nippon as polyisocyanate
Polyurethane Industry Co., Ltd. system) 5.0 mass parts, the SPEEDCURE BKL (business as Photoepolymerizationinitiater initiater
The name of an article, DKSH Japan K.K. systems) 4.0 mass parts and mix, obtain adhesive composition 2D.
[adhesive phase composition 2F]
Relative to including 80 mass parts of 2-EHA, 19 mass parts of acrylic acid 2- hydroxy esters, 1 mass of methacrylic acid
00 mass parts of copolymer 1 of part, add Coronate L (trade name, Nippon Polyurethane as polyisocyanate
Industry Co., Ltd.s system) 3.0 mass parts and mix, obtain adhesive composition 2E.
[making of semiconductor wafer surface protection adhesive tape]
[embodiment 1]
The use of 2 μm of bonding agents by thickness is 38 μm, tensile modulus of elasticity be the poly- to benzene two through two sides sided corona treatment of 2GPa
Formic acid glycol ester film is bonded with the polypropylene screen that thickness is 40 μm, obtains adding up to 80 μm of laminated substrate resin film.Then,
On the membrane for the polyethylene terephthalate (PET) that thickness is 38 μm, become 30 μm of side according to dried thickness
Formula coating adhesive composition 2B, after dry, the polyethylene terephthalate with above-mentioned 80 μm of laminated substrate resin film
Face paste is closed, and obtains the semiconductor wafer surface protection adhesive tape that thickness is 110 μm.
[embodiment 2]
In addition to using 2C as adhesive composition, by method similarly to Example 1, it is 110 μm to obtain thickness
Semiconductor wafer surface protection adhesive tape.
[embodiment 3]
In addition to using 2A as adhesive composition, by method similarly to Example 1, it is 110 μm to obtain thickness
Semiconductor wafer surface protection adhesive tape.
[embodiment 4]
In addition to using 2D as adhesive composition, by method similarly to Example 1, it is 110 μm to obtain thickness
Semiconductor wafer surface protection adhesive tape.
[embodiment 5]
On the two sides for the polyethylene terephthalate film that thickness is 50 μm, tensile modulus of elasticity is 2GPa, according to thickness
Low density polyethylene films are extruded and are molded as 30 μm of modes, sided corona treatment is carried out to the single side of low density polyethylene (LDPE), is obtained
To the laminated substrate resin film for adding up to 110 μm.Then, in the polyethylene terephthalate (PET) that thickness is 38 μm
On membrane, the coating adhesive composition 2A in the way of dried thickness becomes 20 μm, after dry, with above-mentioned 110 μm
The low density polyethylene (LDPE) face paste through sided corona treatment of laminated substrate resin film is closed, and obtains the semiconductor crystal wafer table that thickness is 130 μm
Face protection adhesive tape.
[embodiment 6]
Except the polyethylene terephthalate film of laminated substrate resin film being set as, thickness is 25 μm, tensile modulus of elasticity
Beyond the polyethylene terephthalate film of 2GPa, by method similarly to Example 5, it is 105 μm to obtain thickness
Semiconductor wafer surface protection adhesive tape.
[embodiment 7]
In the polyethylene terephthalate film through two sides sided corona treatment that thickness is 50 μm, tensile modulus of elasticity is 2GPa
On single side, low density polyethylene films are extruded and are molded in the way of thickness becomes 10 μm, obtain the stacking that thickness is 60 μm
Substrate resin film.Then, on the membrane for the polyethylene terephthalate (PET) that thickness is 38 μm, according to dried
Thickness becomes 50 μm of mode coating adhesive composition 2F, after dry, poly- pair with above-mentioned 60 μm of laminated substrate resin film
Ethylene terephthalate face paste is closed.And then on the membrane for the polyethylene terephthalate (PET) that thickness is 38 μm,
The coating adhesive composition 2C in the way of dried thickness becomes 20 μm, after dry, fits in the stripping of above-mentioned intermediate
It is 130 μm of semiconductor wafer surface protection adhesive tape from thickness on the adhesive composition 2F faces of membrane, is obtained.
[comparative example 1]
In the polyethylene terephthalate base through two sides sided corona treatment that thickness is 100 μm, tensile modulus of elasticity is 2GPa
On the single side of material resin film, low density polyethylene films are extruded and are molded in the way of thickness becomes 10 μm, obtaining thickness is
110 μm of laminated substrate resin film.Then, on the membrane for the polyethylene terephthalate (PET) that thickness is 38 μm, press
Become 20 μm of mode coating adhesive composition 2F according to dried thickness, after dry, the laminated substrate film with above-mentioned 110 μm
Polyethylene terephthalate face paste close.And then thickness be 38 μm polyethylene terephthalate (PET) every
On film, the coating adhesive composition 2C in the way of dried thickness becomes 20 μm, after dry, fits in above-mentioned intermediate
The adhesive composition 2F faces for having peeled off membrane on, it is 150 μm of semiconductor wafer surface protection adhesive tape to obtain thickness.
[comparative example 2]
It is film-made by being coextruded, makes the thickness of 80 μm of 30 μm of ldpe resin and ethylene-vinyl acetate copolymer
The laminated substrate resin film for being 0.2GPa for 110 μm, tensile modulus of elasticity, electricity is carried out to ethylene-vinyl acetate copolymer face
Dizzy processing.Then, on the membrane for the polyethylene terephthalate (PET) that thickness is 38 μm, according to dried thickness
As 20 μm of mode coating adhesive composition 2C, after dry, with above-mentioned 110 μm of laminated substrate film through sided corona treatment
Ethylene-vinyl acetate copolymer face paste is closed, and obtains the semiconductor wafer surface protection adhesive tape that thickness is 130 μm.
[comparative example 3]
It is film-made by being coextruded, makes the thickness of 80 μm of 30 μm of high-density polyethylene resin and ethylene-vinyl acetate copolymer
The laminated substrate resin film for being 0.4GPa for 110 μm, tensile modulus of elasticity, electricity is carried out to ethylene-vinyl acetate copolymer face
Dizzy processing.Then, on the membrane for the polyethylene terephthalate (PET) that thickness is 38 μm, according to dried thickness
As 20 μm of mode coating adhesive composition 2E, after dry, with above-mentioned 110 μm of laminated substrate resin film through corona at
The ethylene-vinyl acetate copolymer face paste of reason is closed, and obtains the semiconductor wafer surface protection adhesive tape that thickness is 130 μm.
[evaluating characteristics experiment]
For the semiconductor wafer surface protection adhesive tape of above-described embodiment and comparative example, evaluating characteristics are carried out as described below
Experiment.It the results are shown in table 1 and table 2.
(1) peeling force
Using the semiconductor wafer surface protection adhesive tape made in each embodiment and each comparative example, 30 ° of peel angle is measured
Under peeling force.
By semiconductor wafer surface protection (the reference figure of test film 14 that width is 25mm, length is 300mm is cut with adhesive tape
10).Using the thickness of 4305 defineds of JIS G after the finishing of the water-fast pouncing paper of No. 280 of 6253 defineds of JIS R as
On stainless steel (Steel Use Stainless, SUS) plate of 1.5mm, to above-mentioned test film 14 with the rubber of 3 reciprocal crimping 2kg
Rubber roller.Place 1 it is small when after, by the substrate resin film back side illuminaton 500mJ/ of semiconductor wafer surface protection adhesive tape binding face
cm2(illumination 40mW/cm2) ultraviolet, further place 1 it is small when after, fall into the 15~85% of its capacity using measured value
Cupping machine (desk-top 5567) the measure peeling force of twin columns of the Instron company systems for being suitable for JIS B 7721 of scope.In detail
For thin, SUS plates as shown in Figure 10, are fixed on the inclined pedestal 15 with 30 °, by the end of test film 14 with fixture 16
Hold, draw speed be 20mm/min, 25 DEG C, relative humidity for 50% under conditions of stretch and be measured.Led to fifty-fifty
Body crystal column surface protection adhesive tape is implemented 3 times respectively, obtains its arithmetic mean of instantaneous value, as 30 ° of peeling forces.Fixed SUS
The pedestal 15 of plate makes peel angle θ become 30 ° always by with being adjusted in the way of peeling off adaptable driving.It is not in pedestal 15
It in the case of drive-type, can also start to measure with acute angle compared to 30 °, read strippings of the peel angle θ as 30 ° of point
Power.And then except SUS plates are fixed on no inclined pedestal, carried out by 90 ° of stripping methods with peeling rate 50mm/min
Beyond stripping, the 90 ° of peeling forces also obtained under 90 ° of peel angle are operated as described above.When adhesive is pressure sensitive, generation
1 after irradiating and irradiate for ultraviolet places when small, and SUS plates are being heated to similarly to measure 30 ° of strippings in the state of 50 DEG C
Power.
(2) repulsive force (ring stiffness)
Make made ring stiffness tester (trade name), measure repulsive force α using Toyo Co., Ltd.'s essence mechanism.By each embodiment
And the semiconductor wafer surface protection made in each comparative example is cut into width with adhesive tape and makes test film for 10mm, is peeling off
In the state of membrane, it is arranged on ring stiffness tester.At this time, a length of more than the 50mm of ring banding test film center
Near, the circular rings of a length of 50mm of ring are made in the way of adhesive phase becomes inner side, are measured the circular rings from outer side pressure
Enter the load being subject to during 5mm.The load obtained at this time is converted into unit width, row will be used as using the value that mN/mm units represent
Repulsion α.For the semiconductor wafer surface protection adhesive tape of the making in each embodiment and each comparative example, 3 samples are carried out
Evaluation, uses value obtained from arithmetic average.
(3) relative to the gel fraction of slurry
The semiconductor wafer surface protection made in each embodiment and each comparative example is cut into 50mm × 50mm with adhesive tape.By
The sample cut peels off membrane, measure weight (weight before dipping).The substrate resin film for not having coating adhesive is similarly cut
Take into 50m × 50mm and measure weight (substrate weight).After weight measure, cutting sample is set to be impregnated in the hydrogen filled in Ph12
The average grain diameter for disperseing 14 weight % in aqueous solution of sodium oxide is CMP slurry obtained from the cataloid of 50nm
In the polypropylene container of 500ml, place 24 it is small when after, sample is taken out from container, slurry is fully rinsed with pure water.For
It is dry and after placing 3 days, determination sample weight (weight after dry).Gel fraction is obtained by following calculating formulas.
Gel fraction=(weight-substrate weight after dry)/(weight-substrate weight before dipping) × 100 (%)
In addition, substrate weight can also be obtained come instead of actual measurement by density × volume by calculating.
(4) evaluation of precut method is utilized
[drawing inclined]
On the semiconductor crystal wafer for 8 inch diameters that thickness is 725 μm, as shown in Figure 9, mould is formed using cutting machine
Intend the circuit pattern of semiconductor crystal wafer and be arranged at the simulation difference of height of the groove of cut-out predetermined position.Specifically, in order to simulate
Ground forms the difference of height of circuit pattern, and 60 μm of width and the line of 10 μm of depth are arranged at intervals into clathrate with 5mm.And then make
To be arranged at the groove of cut-out predetermined position, 30 μm of width and the groove of 60 μm of depth are further set in the center of above-mentioned line width.
The semiconductor wafer surface protection of each embodiment and each comparative example adhesive tape is used into Dong Jing machines Co., Ltd.
The DR8500II (trade name) of system is used as make-up machine, consistent with semiconductor crystal wafer recess direction with MD directions according to surface protection
Mode fits in the surface of the semiconductor crystal wafer formed with above-mentioned simulation difference of height.Thereafter, using Tokyo Seimitsu Co., Ltd's system
PG3000RM (trade name) be used as grinder, the back side of semiconductor crystal wafer is ground to the thickness of semiconductor crystal wafer becomes 30 μ
M, is ground using CMP slurry, makes simulation difference of height wafer singualtion.
For back side semiconductor crystal wafer after grinding, as shown in Figure 9, on semiconductor crystal wafer central part and periphery
By optical microphotograph sem observation notch (groove) at total 3 points in 2 points of portion, kerf width is measured.The observation of kerf width is partly being led
After the grinding of body wafer 1 it is small when within implement, in the state of surface protection band is pasted with, never the half of adhesive surface protection band
Semiconductor wafer rear side carries out.For drawing deviator, the kerf width of wafer after grinding is measured by light microscope, in X side
To and Y-direction on measure and the absolute value of the variable quantity of the kerf width (30 μm) before grinding, with the X side at 3 points that are measured
To average value Kx and the average value Ky of Y-direction evaluated.By the average value of Kx and Ky less than 5 μm and 0.8≤(Ky/Kx)≤
1.1 situation is set as zero as non-defective unit, is more than 5 μm or Ky/Kx by the average value of Kx and Ky<0.8 or 1.1<Ky/Kx
Situation be set as substandard products ×.
[chip stripping]
After kerf width is observed, 500mJ/cm is irradiated from the base material film side of semiconductor wafer surface protection adhesive tape2Purple
Outside line.Thereafter, it is bonded dicing die bonding film on the abradant surface of semiconductor crystal wafer.Thereafter, protected in semiconductor wafer surface
Heat sealing agent is bonded with the surface of adhesive tape, semiconductor wafer surface protection is peeled off with adhesive tape.Chip stripping is confirmed by visual observation
The presence or absence of from, the adhesive tape for not seeing chip stripping completely is set as ◎ as non-defective unit, what it is by most end is not square
The chip of shape is peeled off but the square chips of inside are set as 〇 without the adhesive tape peeled off as non-defective unit, by square core
The adhesive tape of some or all strippings of piece is set as substandard products ×.
[residue glue]
And then the mould of the semiconductor crystal wafer after semiconductor wafer surface protection is peeled off with adhesive tape by optical microphotograph sem observation
Intend difference of height face.Semiconductor wafer surface protection adhesive tape will can not be confirmed on the simulation difference of height face of semiconductor crystal wafer
The adhesive tape of residue of adhesive be set as zero as non-defective unit, using even the adhesive tape for having residue at one is set as substandard products
Be set to ×.In addition, on comparative example 3, due to seeing many dust intrusions, so not carrying out the judgement of residue glue.
[dust intrusion]
In addition, the mould of the semiconductor crystal wafer after semiconductor wafer surface protection is peeled off with adhesive tape by optical microphotograph sem observation
Intend difference of height face and the semiconductor wafer surface protection adhesive tape after semiconductor wafer surface protection is peeled off with adhesive tape
Wafer binding face, when simulation difference of height face, wafer binding face are not confirmed dust and the fitting in wafer binding face
The adhesive tape for not seeing the discoloration of part corresponding with notch is set as ◎ as non-defective unit, although by wafer binding face
The discoloration of part corresponding with notch is seen during fitting but simulates difference of height face, wafer binding face does not confirm dust
Adhesive tape be set as 〇 as non-defective unit, will be confirmed in simulation difference of height face or wafer binding face the adhesive tape of dust as
Substandard products and be set as ×.
(5) evaluation being usually ground is utilized
[warpage of wafer]
On the wafer for the 8inch that the thickness coated with 5 μm of polyimides is 780 μm, the smart machine Co. Ltd. system in day east is used
DR8500II (trade name) is used as make-up machine, is bonded the semiconductor wafer surface protection bonding of each embodiment and each comparative example
Band, using the DGP8760 (trade name) of DISCO Corporation as grinder, is ground to wafer thickness as 50 μm.Close
In each semiconductor crystal wafer protection adhesive tape, 4 wafers are ground, by 1 during the conveyance in grinder device all
The adhesive tape for not producing the conveyance mistake of the warpage due to wafer is set as 〇 as non-defective unit, and general is even 1 generates
Be set as due to the wrong adhesive tape of the conveyance of the warpage of wafer as substandard products ×.
[table 1]
[table 2]
As shown in table 1, on having the stripping under 30 ° of rigid layer and peel angle on substrate resin film
Power is the embodiment 1~7 of 0.1~3.0N/25mm, can process in the case of not by semiconductor crystal wafer pollution or breakage and partly lead
Body wafer.On the other hand, as shown in table 2, on the comparative example 2,3 without rigid layer, draw it is bigger than normal, also see by
The crackle of chip caused by chip contact through singualtion.In addition, it is more than 3.0N/ on the peeling force under 30 ° of peel angle
The comparative example 1 of 25mm, generates chip stripping and residue glue.
As known as these embodiments and comparative example, semiconductor wafer surface protection of the invention is sent out with adhesive tape
Wave the effect for reducing and drawing deviator and can processing and peel off in the case of not by wafer contamination or breakage.
Symbol description
1：Semiconductor wafer surface protection adhesive tape
2：Substrate resin film
4：Adhesive phase
5：Semiconductor crystal wafer
6：Cutting belt
7：Groove
8：Grinding attachment
9：Annular frame
11：Chip
Claims (10)
1. a kind of semiconductor wafer surface protection adhesive tape, it is characterised in that it is with substrate resin film and is formed at described
The adhesive phase of the radiation-curable of at least single-face side of substrate resin film,
The substrate resin film has the rigid layer that at least 1 layer of tensile modulus of elasticity is 1~10GPa,
Make described adhesive floor carry out radiation-curing after for the water-fast pouncing paper of No. 280 of 6253 defineds of JIS R
The thickness of 4305 defineds of JIS G after finishing is the stripping of the stainless steel (Steel Use Stainless, SUS) of 1.5mm
Peeling force under 30 ° of digression degree is 0.1~3.0N/25mm.
2. a kind of semiconductor wafer surface protection adhesive tape, it is characterised in that it is with substrate resin film and is formed at described
At least single-face side of substrate resin film and by the irradiations of radioactive ray will not cured adhesive phase,
The substrate resin film has the rigid layer that at least 1 layer of tensile modulus of elasticity is 1~10GPa,
Being advised for the JIS G 4305 after the finishing of the water-fast pouncing paper of No. 280 with 6253 defineds of JIS R at 50 DEG C
Peeling force under 30 ° of the peel angle for the stainless steel (Steel Use Stainless, SUS) that fixed thickness is 1.5mm is 0.1
~3.0N/25mm.
3. semiconductor wafer surface protection adhesive tape according to claim 1 or 2, it is characterised in that by following
The repulsive force for the per unit width that the load load of the ring stiffness measured under part (a)~(d) is obtained is 2~15mN/mm,
(a) device
Ring stiffness tester (trade name, Toyo Co., Ltd.'s essence mechanism are made made)
(b) ring (test film) shape
Length is 50mm, width 10mm, test film direction are band MD directions
(c) press-in speed of pressure head
3.3mm/sec
(d) intrusion of pressure head
5mm is pressed at the time of pressure head is contacted with ring.
4. according to semiconductor wafer surface protection adhesive tape according to any one of claims 1 to 3, it is characterised in that
Layer between the rigid layer and described adhesive layer is only less than the layer of 1GPa, described adhesive comprising tensile modulus of elasticity
The thickness of layer adds up to less than 60 μm with the thickness of layer of the tensile modulus of elasticity less than 1GPa.
5. semiconductor wafer surface protection adhesive tape according to any one of claims 1 to 4, it is characterised in that
Described adhesive layer impregnated in the slurry of chemical mechanical grinding 24 it is small when after insoluble component relative to being impregnated in
Ratio before stating in slurry is more than 75%, and the slurry is to disperse 14 weight % in the sodium hydrate aqueous solution of pH12
Average grain diameter is obtained from the cataloid of 50nm.
6. semiconductor wafer surface protection adhesive tape according to claim 1, it is characterised in that
Described adhesive layer contains the radioaction resin on side chain with ethylenically unsaturated group, and comprising for leading to
Cross irradiation radioactive ray and with the radioaction resin reaction and make peeling force decline modifying agent.
7. semiconductor wafer surface protection adhesive tape according to claim 6, it is characterised in that
The modifying agent is non-organic silicon systems.
8. a kind of manufacture method of semiconductor crystal wafer, it is characterised in that it includes following process：(a) cutting along semiconductor crystal wafer
Disconnected preset lines, the process that the groove of the thickness less than the semiconductor crystal wafer is formed from the surface of the semiconductor crystal wafer；(b) in shape
Into the semiconductor wafer surface for having the groove, it is bonded semiconductor wafer surface protection according to any one of claims 1 to 7 and uses
The process of adhesive tape；And (c) by the way that the semiconductor wafer back is ground, so that by the semiconductor crystal wafer monolithic
The process of change.
9. a kind of manufacture method of semiconductor crystal wafer, it is characterised in that it includes following process：(a) by semiconductor crystal wafer
The semiconductor crystal wafer internal irradiation laser blocked in preset lines and the process for forming modification area；(b) at (a)
Before or after process, it is bonded semiconductor wafer surface according to any one of claims 1 to 7 in semiconductor wafer surface and protects
The process of shield adhesive tape；And (c) by the way that the semiconductor wafer back is ground, so that by the semiconductor crystal wafer
The process of singualtion.
10. the manufacture method of semiconductor crystal wafer according to claim 8 or claim 9, it is characterised in that the process bag of (c)
Containing the process for carrying out chemical grinding.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2015/080498 WO2017072901A1 (en) | 2015-10-29 | 2015-10-29 | Adhesive tape for protecting surfaces of semiconductor wafers and method for processing semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108028190A true CN108028190A (en) | 2018-05-11 |
Family
ID=58630060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580083004.3A Pending CN108028190A (en) | 2015-10-29 | 2015-10-29 | The processing method of semiconductor wafer surface protection adhesive tape and semiconductor crystal wafer |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20180039020A (en) |
| CN (1) | CN108028190A (en) |
| WO (1) | WO2017072901A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111033717A (en) * | 2018-05-31 | 2020-04-17 | 古河电气工业株式会社 | Electronic device processing tape and method for manufacturing electronic device processing tape |
| CN113518814A (en) * | 2019-03-07 | 2021-10-19 | 琳得科株式会社 | Solid wafer and method for manufacturing semiconductor chip with film-like adhesive |
| CN115703949A (en) * | 2021-08-11 | 2023-02-17 | 利诺士尖端材料有限公司 | Adhesive film for wafer processing |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111693368A (en) * | 2020-06-15 | 2020-09-22 | 苏州高泰电子技术股份有限公司 | Test method for microscopic characterization performance of wafer cutting adhesive tape |
| CN113616017B (en) * | 2021-09-08 | 2023-10-20 | 今创集团股份有限公司 | Back-to-back seat and manufacturing method thereof |
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| CN103509479A (en) * | 2012-06-28 | 2014-01-15 | 古河电气工业株式会社 | Adhesive tape for wafer processing |
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| JP4776188B2 (en) * | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | Semiconductor device manufacturing method and wafer processing tape |
| JP5367903B2 (en) * | 2012-03-19 | 2013-12-11 | 古河電気工業株式会社 | Adhesive tape for semiconductor wafer surface protection |
| JP5823591B1 (en) * | 2014-10-01 | 2015-11-25 | 古河電気工業株式会社 | Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer |
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2015
- 2015-10-29 WO PCT/JP2015/080498 patent/WO2017072901A1/en active Application Filing
- 2015-10-29 CN CN201580083004.3A patent/CN108028190A/en active Pending
- 2015-10-29 KR KR1020177035910A patent/KR20180039020A/en not_active Application Discontinuation
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| JPH0649415A (en) * | 1992-08-03 | 1994-02-22 | Sony Chem Corp | Tacky agent and double-sided tacky tape |
| EP1108767A2 (en) * | 1999-12-15 | 2001-06-20 | Beiersdorf Aktiengesellschaft | Adhesive tape for masking a cathodic electrocoat |
| CN102754200A (en) * | 2009-12-22 | 2012-10-24 | 古河电气工业株式会社 | Adhesive tape for protecting surface of semiconductor wafer |
| CN103509479A (en) * | 2012-06-28 | 2014-01-15 | 古河电气工业株式会社 | Adhesive tape for wafer processing |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111033717A (en) * | 2018-05-31 | 2020-04-17 | 古河电气工业株式会社 | Electronic device processing tape and method for manufacturing electronic device processing tape |
| CN111033717B (en) * | 2018-05-31 | 2023-04-25 | 古河电气工业株式会社 | Electronic device processing tape and method for manufacturing electronic device processing tape |
| CN113518814A (en) * | 2019-03-07 | 2021-10-19 | 琳得科株式会社 | Solid wafer and method for manufacturing semiconductor chip with film-like adhesive |
| CN113518814B (en) * | 2019-03-07 | 2023-05-23 | 琳得科株式会社 | Method for manufacturing die-attach sheet and semiconductor chip with film-like adhesive |
| CN115703949A (en) * | 2021-08-11 | 2023-02-17 | 利诺士尖端材料有限公司 | Adhesive film for wafer processing |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180039020A (en) | 2018-04-17 |
| WO2017072901A1 (en) | 2017-05-04 |
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Application publication date: 20180511 |