CN108023018A - The preparation method of inversion perovskite solar cell based on the continuously adjustable control of band gap - Google Patents
The preparation method of inversion perovskite solar cell based on the continuously adjustable control of band gap Download PDFInfo
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- CN108023018A CN108023018A CN201711220163.0A CN201711220163A CN108023018A CN 108023018 A CN108023018 A CN 108023018A CN 201711220163 A CN201711220163 A CN 201711220163A CN 108023018 A CN108023018 A CN 108023018A
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Abstract
A kind of preparation method of the inversion perovskite solar cell based on the continuously adjustable control of band gap, the battery structure include：Anode transparent conductive substrate, hole transmission layer, perovskite active layer, electron transfer layer, electronics decorative layer and cathode electrode, the preparation method comprise the following steps：Step 1：One layer of CuNiO of spin coating in anode transparent conductive substratexPrecursor solution, sintering, formed densification CuNiOxHole transmission layer；Step 2：In CuNiOxThe precursor solution of one layer of perovskite of spin coating on hole transmission layer, annealing, forms active layer；Step 3：The spin coating organic polymer PC61BM solution on active layer, forms electron transfer layer；Step 4：Spin coating acetylacetone,2,4-pentanedione zirconium solution on the electron transport layer, prepares electronics decorative layer；Step 5：Metal electrode is prepared as cathode on electronics decorative layer by the way of thermal evaporation, completes the preparation of solar cell.
Description
Technical field
The invention belongs to perovskite technical field of solar batteries, is related to and is inverted perovskite solar cell, more particularly to base
In the preparation method of the inversion perovskite solar cell of the continuously adjustable control of band gap.
Background technology
Perovskite solar cell is had received widespread attention, it is prepared in recent years with its excellent photoelectric conversion efficiency
Technique is simple, cost is low and good flexibility compatibility, it is possessed the potentiality of extensive industrialization.Traditional perovskite sun
Battery structure generally uses the structure of dye-sensitized cell, and ito glass is as cathode, TiO2As electron transfer layer, Spiro-
OMeTAD is used as metal anode as hole transmission layer, gold.Although the perovskite solar cell of this structure achieves very big
Progressive, photoelectric conversion efficiency is more than 20%.But TiO2 is under light illumination, its performance can fail.And the calcium of inverted structure
Titanium ore battery, since there are the problem of level-density parameter, open-circuit voltage is always below traditional structure.In this context, it is a kind of new
The perovskite solar cell of inverted structure is suggested.Inverted structure solar cell is using FTO as anode, CuNiOxPassed as hole
Defeated layer, PC61BM is as electron transfer layer, and the materials A g of higher work-functions is as cathode.The doping of Cs and Cl elements are utilized at the same time
Optimize the performance of calcium titanium ore bed, the performance of battery is greatly improved, peak efficiency is up to 20.5%.
The content of the invention
It is an object of the present invention to propose a kind of preparation of the inversion perovskite solar cell based on the continuously adjustable control of band gap
Method, is doped to NiOx hole transmission layers, the presence of Cu can improve NiOx layers of hole mobility and realize by metallic copper
NiOx layers and calcium titanium ore bed level-density parameter, are conducive to separation of charge and transmission, so as to effectively improve solar cell opto-electronic conversion effect
Rate；Cs element dopings can regulate and control the energy gap of calcium titanium ore bed, make calcium titanium ore bed band gap and sunlight spectrum to calcium titanium ore bed
Matching, efficient absorption utilizes sunlight, while the presence of Cs elements can improve the stability of perovskite material, extends making for device
Use the service life；The doping of Cl elements can improve the crystalline quality of calcium titanium ore bed, crystallite dimension is become larger, and crystal boundary is reduced, and reduce light
Give birth to the compound of carrier.Three of the above technology of preparing, can greatly improve reversed structure perovskite solar cell photoelectric properties and
Stability.
The present invention provides a kind of preparation method of the inversion perovskite solar cell based on the continuously adjustable control of band gap, the battery
Structure includes：Anode transparent conductive substrate, hole transmission layer, perovskite active layer, electron transfer layer, electronics decorative layer and cathode
Electrode, the preparation method comprise the following steps：
Step 1：One layer of CuNiO of spin coating in anode transparent conductive substratexPrecursor solution, sintering, formed densification
CuNiOxHole transmission layer；
Step 2：In CuNiOxThe precursor solution of one layer of perovskite of spin coating on hole transmission layer, annealing, forms active layer；
Step 3：The spin coating organic polymer PC61BM solution on active layer, forms electron transfer layer；
Step 4：Spin coating acetylacetone,2,4-pentanedione zirconium solution on the electron transport layer, prepares electronics decorative layer；
Step 5：Metal electrode is prepared as cathode on electronics decorative layer by the way of thermal evaporation, completes solar cell
Preparation.
It can be seen from the above technical proposal that the invention has the advantages that：
(1) in the present invention, CuNiO is utilizedxHole transmission layer substitute traditional PEDOT：PSS, by metal Copper-cladding Aluminum Bar
Enter NiOxHole transmission layer, can either improve NiOxThe hole mobility of layer, and can realize NiOxLayer and calcium titanium ore bed energy level are perfect
Matching, is conducive to separation of charge and transmission.Overcome traditional PEDOT：Device open-circuit voltage is low caused by PSS, and hygroscopic lacks
Point, so as to effectively improve photoelectric conversion efficiency of the solar battery and stability.
(2) in the present invention, doping of the Cs elements to calcium titanium ore bed, can continuously regulate and control calcium titanium ore bed band gap, realize to the sun
Spectrum more efficiently absorbs, and the presence of Cs elements is improved the stability of active layer.
(3) in the present invention, Cl element doping calcium titanium ore beds, can promote perovskite crystal grain to grow up, and reduce crystal boundary and defect is close
Degree, reduces the compound of carrier, has positive effect to the photoelectric conversion efficiency for improving device.
Brief description of the drawings
To make the purpose of the present invention, technical solution become apparent from understanding, below in conjunction with specific embodiment, and referring to the drawings,
The present invention is described in further detail, wherein：
Fig. 1 is flow chart of the method for the present invention；
Fig. 2 is the structure diagram of the inversion perovskite solar cell of the present invention.
Embodiment
Please refer to Fig.1 and Fig. 2 shown in, the present invention provide it is a kind of based on the continuously adjustable control of band gap the inversion perovskite sun electricity
The preparation method in pond, the battery structure include：Anode transparent conductive substrate 10, hole transmission layer 20, perovskite active layer 30, electricity
Sub- transport layer 40, electronics decorative layer 50 and cathode electrode 60, the preparation method comprise the following steps：
Step 1：The precursor solution of one layer of CuNiOx of spin coating in anode transparent conductive substrate 10, sintering, forms fine and close
CuNiOxHole transmission layer 20, the material of the anode transparent conductive substrate 10 is FTO transparent conducting glass, first by FTO
Glass is cleaned by ultrasonic 20min with liquid detergent, deionized water, acetone, aqueous isopropanol successively, is then dried up with nitrogen, Zhi Houfang
Enter in UV-ozone cleaning machine and handle 15min.Be conducive to improve CuNiOxThe quality of film forming, reduces FTO surface contaminants to reality
The influence tested.
Tetra- water nickel acetates of 248.86g are added in 10mL ethanol and the monoethanolamine of 60 μ L, at room temperature magnetic agitation 12h, shape
Into NiOxPrecursor solution.Mono- water copper acetates of 199.65g are added in 10mL ethanol and the monoethanolamine of 60 μ L, at room temperature magnetic force
12h is stirred, forms the precursor solution of CuOx.By NiOxPrecursor solution with 99: 5 volume ratio in CuOxPresoma it is molten
Liquid is mixed, and obtains CuNiOxPrecursor solution.The CuNiOxPrecursor solution for nickel acetate, copper acetate, ethanol
With the mixed solution of monoethanolamine.By CuNiOxPrecursor solution be spun to the speed of 3000rpm on FTO glass, in air
The temperature of middle sintering is 340 DEG C, sintering time 1h, forms densification CuNiOxHole transmission layer 20, the hole transmission layer 20
Thickness be 20-40nm；
Step 2：The precursor solution of one layer of perovskite of spin coating on CuNiOx hole transmission layers 20, annealing, forms active
Layer 30, the precursor solution of the perovskite of the spin coating is CsaFA0.2MA0.8-aPbI3-bClbIt is molten to be dissolved in dimethylformamide
Liquid (DMF), wherein 0 ＜ a ＜ 0.4,0 ＜ b ＜ 0.15, specific as follows, by CsI, MAI, FAI, PbI2And PbCl2To meet
CsaFA0.2MA0.8-aPbI3-bClbThe form of stoichiometric ratio is dissolved in DMF with the concentration mixing of 1.2M, magnetic agitation at 50 DEG C
12h, obtains the precursor solution of perovskite.Using one-step method, toluene anti-solvent processing is carried out in spin coating process, i.e., by this forerunner
Liquid solution is spun on CuNiO with the speed of 6000rpmxOn film, after starting to rotate 5s, 100 μ L toluene are dripped into rapidly calcium titanium
Ore bed surface carries out solvent processing.Then made annealing treatment, the temperature of annealing is 100 DEG C, time 10min, is formed active
Layer 30, the bandgap range of the calcium titanium ore bed 30 is 1.60-1.64eV；
Step 3：Above-mentioned active layer 30 is moved on in glove box, spin coating organic polymer PC61BM solution, form electronics and pass
Defeated layer 40, the spin coating rotating speed of the spin coating organic polymer PC61BM solution is 1000rpm, and PC61BM is that concentration is 20mg/
The chlorobenzene solution of mL, the thickness of the electron transfer layer 40 of formation is 50-100nm；
Step 4：The spin coating acetylacetone,2,4-pentanedione zirconium solution on electron transfer layer 40, prepares electronics decorative layer 50, the electronics
Decorative layer 50 is that the ethanol solution spin coating of acetylacetone,2,4-pentanedione zirconium 2mg/mL is prepared, and spin coating rotating speed is 2000rpm, thickness about 5-
10nm；
Step 5：Metal electrode is prepared as cathode 60, described the moon on electronics decorative layer 50 by the way of thermal evaporation
The material of pole 60 is Ag, carries out electrode preparation using the method for thermal evaporation, the thickness of evaporation is 50-300nm, completes solar cell
Preparation.
Particular embodiments described above, has carried out the purpose of the present invention, technical solution and beneficial effect further in detail
Describe in detail it is bright, it should be understood that the foregoing is merely the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done, should be included in the guarantor of the present invention
Within the scope of shield.
Claims (8)
1. a kind of preparation method of the inversion perovskite solar cell based on the continuously adjustable control of band gap, the battery structure include：Sun
Pole transparent conductive substrate, hole transmission layer, perovskite active layer, electron transfer layer, electronics decorative layer and cathode electrode, the preparation
Method comprises the following steps：
Step 1：One layer of CuNiO of spin coating in anode transparent conductive substratexPrecursor solution, sintering, formed densification CuNiOx
Hole transmission layer；
Step 2：In CuNiOxThe precursor solution of one layer of perovskite of spin coating on hole transmission layer, annealing, forms active layer；
Step 3：The spin coating organic polymer PC61BM solution on active layer, forms electron transfer layer；
Step 4：Spin coating acetylacetone,2,4-pentanedione zirconium solution on the electron transport layer, prepares electronics decorative layer；
Step 5：Metal electrode is prepared on electronics decorative layer by the way of thermal evaporation as cathode, completes the system of solar cell
It is standby.
2. the preparation method of the inversion perovskite solar cell according to claim 1 based on the continuously adjustable control of band gap, its
The material of anode transparent conductive substrate in middle step 1 is FTO transparent conducting glass.
3. the preparation method of the inversion perovskite solar cell according to claim 1 based on the continuously adjustable control of band gap, its
CuNiO in middle step 1xPrecursor solution be nickel acetate, copper acetate, the mixed solution of ethanol and monoethanolamine, in atmosphere
The temperature of sintering is 340 DEG C, sintering time 1h, forms densification CuNiOxHole transmission layer, the thickness of the hole transmission layer
For 20-40nm.
4. the preparation method of the inversion perovskite solar cell according to claim 1 based on the continuously adjustable control of band gap, its
The precursor solution of the perovskite of spin coating is CsaFA in middle step 20.2MA0.8-aPbI3-bClbIt is dissolved in dimethyl formamide solution,
0.4,0 ＜ b ＜ 0.15 of wherein 0 ＜ a ＜, using one-step method, carry out toluene anti-solvent processing in spin coating process, anneal, formed with
Active layer.
5. the preparation method of the inversion perovskite solar cell according to claim 4 based on the continuously adjustable control of band gap, its
The bandgap range of middle calcium titanium ore bed is 1.60-1.64eV, and the temperature of annealing is 100 DEG C, time 10min.
6. the preparation method of the inversion perovskite solar cell according to claim 1 based on the continuously adjustable control of band gap, its
The spin coating rotating speed of spin coating organic polymer PC61BM solution in middle step 3 is 1000rpm, the thickness of the electron transfer layer of formation
For 50-100nm.
7. the preparation method of the inversion perovskite solar cell according to claim 1 based on the continuously adjustable control of band gap, its
Electronics decorative layer in middle step 4 is prepared for the ethanol solution spin coating of acetylacetone,2,4-pentanedione zirconium, and spin coating rotating speed is 2000rpm, thick
Spend for 5-10nm.
8. the preparation method of the inversion perovskite solar cell according to claim 1 based on the continuously adjustable control of band gap, its
The material of middle cathode is Ag, thickness 50-300nm.
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| CN201711220163.0A CN108023018A (en) | 2017-11-28 | 2017-11-28 | The preparation method of inversion perovskite solar cell based on the continuously adjustable control of band gap |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106245A (en) * | 2019-12-03 | 2020-05-05 | 华东师范大学 | Perovskite battery for inhibiting electrode corrosion and preparation method thereof |
| CN113299833A (en) * | 2021-04-15 | 2021-08-24 | 暨南大学 | Interface-contacted trans-perovskite solar cell module and preparation method and application thereof |
| CN113745410A (en) * | 2021-08-24 | 2021-12-03 | 上海工程技术大学 | Based on P type CuNiO2Preparation method of thin film perovskite solar cell |
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| CN103296222A (en) * | 2013-05-21 | 2013-09-11 | 华北电力大学 | High-performance polymer solar cell cathode modifying material |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106245A (en) * | 2019-12-03 | 2020-05-05 | 华东师范大学 | Perovskite battery for inhibiting electrode corrosion and preparation method thereof |
| CN113299833A (en) * | 2021-04-15 | 2021-08-24 | 暨南大学 | Interface-contacted trans-perovskite solar cell module and preparation method and application thereof |
| CN113299833B (en) * | 2021-04-15 | 2022-08-02 | 麦耀华 | Interface-contacted trans-perovskite solar cell module and preparation method and application thereof |
| CN113745410A (en) * | 2021-08-24 | 2021-12-03 | 上海工程技术大学 | Based on P type CuNiO2Preparation method of thin film perovskite solar cell |
| CN113745410B (en) * | 2021-08-24 | 2023-09-29 | 上海工程技术大学 | Based on P type CuNiO 2 Preparation method of perovskite solar cell of thin film |
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Application publication date: 20180511 |