CN106384785B - A kind of tin dope methyl ammonium lead iodide perovskite solar cell - Google Patents
A kind of tin dope methyl ammonium lead iodide perovskite solar cell Download PDFInfo
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Abstract
The present invention relates to area of solar cell, specifically a kind of hybrid inorganic-organic Ca-Ti ore type solar cell.A kind of tin dope methyl ammonium lead iodide perovskite solar cell, active layer are the methyl ammonium lead iodide perovskite CH of tin dope3NH3SnxPb1‑xI3There is planar heterojunction structure, the present invention to propose that a kind of one-step method handling auxiliary using more solvent prepares CH for film, tin dope methyl ammonium lead iodide perovskite solar cell of the present invention3NH3SnxPb1‑xI3The method of perovskite solar cell obtains the perovskite thin film of high quality, realizes high electricity conversion.
Description
Technical field
The present invention relates to area of solar cell, specifically a kind of hybrid inorganic-organic Ca-Ti ore type solar cell.
Background technology
Perovskite solar cell light absorption layer is a kind of hybrid inorganic-organic perovskite-type material, chemical formula AMX3
（A：CH3NH3+； M：IVA races Pb, Sn blending element；X：Halogen）, cell configuration MX6It constitutes octahedra and contacts with each other,
Constitute three-dimensional structure, NH3CH3+It is embedded.The research and development of perovskite solar cell are honest and clean to utilizing solar energy to provide on a large scale
Valence electric energy has a very important significance.Currently, maximum existing for tin dope methyl ammonium lead iodide perovskite solar cell
Problem is that photoelectric conversion efficiency is relatively low, and stability is poor, is unsatisfactory for the demand of commercial applications.Improve such cell photoelectric conversion effect
One crucial solution of rate is exactly to improve the quality of forming film of cell light absorption layer.Battery can be ensured using thick active layer
Light absorption, but quality of forming film is difficult to ensure, is unfavorable for the transmission of carrier and is effectively collected.Active layer is prepared using two-step method
Film can efficiently solve this problem, that is, utilize two step spin-coating methods, by regulating and controlling annealing temperature and annealing time, same to time control
Solution concentration processed improves crystal growth quality, promotes the transmission and collection of carrier, while improving the light absorption of active layer, from
And realize efficient tin dope methyl ammonium lead iodide perovskite solar cell.For example, 2014, Feng Hao et al. designs
With mesoporous TiO2For electrode, spiro-OMeTAD is the tin dope methyl ammonium lead iodide perovskite electricity of hole mobile material
Pond makes to mix tin ratio to be 25%（That is CH3NH3Sn0.25Pb0.75I3）Cell photoelectric transformation efficiency reached 7.37%, mix tin ratio
It is 50%（That is CH3NH3Sn0.5Pb0.5I3）Battery reached 7.27%【J. Am. Chem. Soc. 2014, 136, 8094−
8099】；2016, Leize Zhu, et al. use two-step method and DMSO annealing auxiliary and make to mix the cell light of tin ratio 10%
Electrotransformation efficiency has reached 10.25%【Nanoscale, 2016,8, 7621-7630】；In July, 2016, Yunlong Li et al. people
It is same that two-step method is used to make to mix tin ratio and reached 13.6% for 50% tin-lead perovskite cell photoelectric transformation efficiency【Adv.
Energy Mater. 2016, 1601353】, the efficiency of tin-lead perovskite solar cell is made to have reached a new high degree.With
Upper document is all made of two step method and makes tin dope methyl ammonium lead iodide perovskite solar cell, these reports are pointed out only to adopt
Made of two-step method and just can guarantee the quality of battery thin film, including the crystallinity of film, consistency and film surface it is smooth
Degree etc., and one-step method preparation is impossible to obtain the battery thin film of a high quality.Although having been obtained using two-step method higher
Electricity conversion, but experiment production process is excessively cumbersome, not only wastes the plenty of time but also also consumes a large amount of money
Source causes cost of manufacture high, and not environmentally.The present invention is proposed using one-step method and is handled by means of more solvent, is made tin and is mixed
Miscellaneous methyl ammonium lead iodide perovskite battery makes to mix the battery peak efficiency that tin ratio is 25% and has reached 12.08%, which is
Fast and low-cost prepares such battery and provides a kind of effective scheme, to push the commercial applications of such battery to have important meaning
Justice.
Invention content
The technical problem to be solved by the present invention is to：How using one-step method making tin dope methyl ammonium lead iodide calcium titanium
Mine battery.
The technical solution adopted in the present invention is：A kind of tin dope methyl ammonium lead iodide perovskite solar cell sinks
Product has anode of the substrate of glass of one layer of uniform indium tin oxide ITO as battery, in the substrate of glass of indium tin oxide ITO
A upper redeposited strata (3,4- ethene dioxythiophenes)-polystyrolsulfon acid PEDOT:PSS films as hole transmission layer,
Poly- (3,4- ethene dioxythiophenes)-polystyrolsulfon acid PEDOT:Redeposited one layer of active layer on PSS films, then in activity
Layer one one [ of spin coating again above;6, 6]Phenyl C60- methyl butyrates PC60BM is finally steamed by Vacuum Heat again as electron transfer layer
The one layer of continuous cathode of aluminium film or silverskin as battery is plated, active layer is the methyl ammonium lead iodide perovskite of tin dope
CH3NH3SnxPb1-xI3Film, x are the positive number less than 1.Tin dope methyl ammonium lead iodide perovskite solar cell of the present invention
With planar heterojunction structure.
As a kind of preferred embodiment：Deposition one layer of active layer process be：By methylpyridinium iodide amine CH3NH3I, lead iodide PbI2
With stannic iodide SnI2It is 1.08 according to molar ratio:(1-x):xIt is dissolved in n,N-Dimethylformamide DMF and dimethyl sulfoxide (DMSO) DMSO
In the mixed solvent forms precursor liquid, in precursor liquid, methylpyridinium iodide amine CH3NH3The molar concentration of I is 1.62 mol/L, N, N- diformazans
The volume ratio of base formamide DMF and dimethyl sulfoxide (DMSO) DMSO are 10:1, using solution spin-coating method in poly- (3,4- ethylene dioxy thiophenes
Pheno)-polystyrolsulfon acid PEDOT:Spin coating precursor liquid on PSS films, spin coating rate are 6000-6500 rpm, and spin-coating time is
30-40s is added dropwise sec-butyl alcohol cleaning, that is, require in the case where keeping substrate of glass rotation status, is added dropwise secondary during this spin coating
Butanol cleans, and the time for starting cleaning carries out after spin coating starts 5-15s, scavenging period 1-1.5s, above process knot
In N after beam2100 °C of 25 s of annealing of temperature are kept in atmosphere, then sec-butyl alcohol are used to impregnate 5-10 s, glass base during immersion
Bottom remains static, rotary glass substrate again after immersion, the speed of rotation 6000-6500 rpm, rotational time 25-35
S, then in N2100 °C of 25 min of annealing of temperature are kept in atmosphere, finally anneal under DMF hot steams 25 min, annealing temperature
100 °C are remained at, the methyl ammonium lead iodide perovskite for the tin dope that film thickness is 290 nm -310 nm is finally produced
CH3NH3SnxPb1-xI3Film.
The present invention prepares CH in one-step method3NH3SnxPb1-xI3During perovskite thin film, handled by means of more solvent
Process, including the cleaning of organic reagent sec-butyl alcohol and soaking process and N2DMF solvent annealing process under atmosphere.In spin coating
CH3NH3SnxPb1-xI3Sec-butyl alcohol is utilized during perovskite thin film to carry out active layer instead of traditional toluene, chlorobenzene
Cleaning, accelerates transformation of the active layer by liquid phase to solid phase, improves the crystallization rate of active layer；It is recycled after preannealing secondary
Butanol impregnates the planarization that active layer has been also greatly facilitate active layer film, the current strength of battery is helped to improve, in work
Property layer solution configuration process in used excessive methylpyridinium iodide amine, with sec-butyl alcohol immersion also contribute to remove extra methyl
Iodate amine；Sec-butyl alcohol used in the present invention is at low cost compared with conventionally used toluene, chlorobenzene, small toxicity；N2Under atmosphere
DMF solvent annealing process contribute to form big crystal grain, fine and close CH3NH3SnxPb1-xI3Perovskite thin film.With an existing step
Method prepares CH3NH3SnxPb1-xI3Perovskite thin film technology is compared, CH prepared by the present invention3NH3SnxPb1-xI3Perovskite thin film is brilliant
Grain bigger, finer and close, crystallinity and flatness higher, thus the CH prepared3NH3SnxPb1-xI3Perovskite solar cell photoelectric
Transformation efficiency is significantly larger than the prior art【See Adv. Energy Mater. 2016,1601353】.With existing two-step method system
Standby CH3NH3SnxPb1-xI3Perovskite thin film technology【See Nanoscale, 2016,8,7621-7630】It compares, simplifies making
Flow saves Production Time, reduces the production cost.And the CH prepared by the present invention3NH3SnxPb1-xI3The perovskite sun
Energy battery is compared with prior art【See Adv. Energy Mater. 2016,1601353, Nanoscale, 2016,8,
7621-7630】, there is simpler structure, be mainly omitted cathode buffer layer.In short, the present invention is better than now from performance
CH prepared by some one-step method3NH3SnxPb1-xI3Perovskite solar cell is better than existing two-step method system from preparation process
Standby CH3NH3SnxPb1-xI3Perovskite solar cell.
As a kind of preferred embodiment：The substrate of glass thickness of indium tin oxide ITO be 100 nm, hole transport strata (3,
4- ethene dioxythiophenes)-polystyrolsulfon acid PEDOT:The thickness of PSS is 30 nm-40 nm, deposition process spin coating rate 3000
Rpm, spin-coating time 30-40 s after the completion of deposition, keep 120 °C of annealing temperature in air, annealing time 10-15 min,
Electron-transport layer thickness is 40 nm-, 50 nm, 2800 rpm of spin coating rate, spin-coating time 30-40 s, cathode electrode layer thickness 150
Nm, evaporation rate are 0.5 nm/s.
The beneficial effects of the invention are as follows：The present invention proposes prepared by a kind of one-step method being handled auxiliary using more solvent
CH3NH3SnxPb1-xI3The method of perovskite solar cell obtains the perovskite thin film of high quality, realizes high photoelectricity
Transformation efficiency.The invention simplifies operating process prepared by existing two-step method using one-step method, saves Production Time, reduces
Cost of manufacture；The invention use sec-butyl alcohol instead of traditional toluene, chlorobenzene as clean and impregnate solvent, it is not only of low cost,
And low toxic and environment-friendly.
Description of the drawings
Fig. 1 is solar battery structure schematic diagram of the present invention；
Fig. 2 is the CH that sec-butyl alcohol is cleaned and do not cleaned3NH3Sn0.25Pb0.75I3Film and its scanning electron microscopy in cross section
Figure（SEM）, wherein a is the CH after being cleaned with sec-butyl alcohol3NH3Sn0.25Pb0.75I3The SEM of film schemes, and c is cleaned with sec-butyl alcohol
Later CH3NH3Sn0.25Pb0.75I3The SEM of thin cross-sections schemes, and b is not cleaned with sec-butyl alcohol
CH3NH3Sn0.25Pb0.75I3The SEM of film schemes, and d is the CH not cleaned with sec-butyl alcohol3NH3Sn0.25Pb0.75I3Thin cross-sections
SEM figure；
The CH that Fig. 3 sec-butyl alcohols are cleaned and do not cleaned3NH3Sn0.25Pb0.75I3The x-ray diffraction of film is composed（XRD）, a representatives are not
The CH of cleaning3NH3Sn0.25Pb0.75I3The XRD spectrum of film, b represent the CH after sec-butyl alcohol cleaning3NH3Sn0.25Pb0.75I3Film
XRD spectrum；
Fig. 4 is CH under different annealing conditions3NH3Sn0.25Pb0.75I3The SEM pictures of film, a is represented will
CH3NH3Sn0.25Pb0.75I3Perovskite thin film is in N2In atmosphere, 100 °C of 25 min of lower thermal annealing of temperature, then in DMF hot steams
Under, the CH of 25 min formation of annealing at 100 °C of temperature3NH3Sn0.25Pb0.75I3The SEM of film schemes；B is represented will
CH3NH3Sn0.25Pb0.75I3Perovskite thin film in air, 100 °C of 25 min of lower thermal annealing of temperature, then under DMF hot steams
The CH that 25 min that anneal at 100 °C of temperature are formed3NH3Sn0.25Pb0.75I3The SEM of film schemes；C is represented will
CH3NH3Sn0.25Pb0.75I3Perovskite thin film is in N2In atmosphere, 25 min of the lower thermal annealing of 100 °C of temperature are formed
CH3NH3Sn0.25Pb0.75I3The SEM of film schemes；
Fig. 5 is CH under different annealing conditions3NH3Sn0.25Pb0.75I3The X-ray diffraction spectrum of film（XRD）, a is represented will
CH3NH3Sn0.25Pb0.75I3Perovskite thin film is in N2In atmosphere, 100 °C of 25 min of lower thermal annealing of temperature, then in DMF hot steams
The CH that 25 min that anneal at 100 °C of lower temperature are formed3NH3Sn0.25Pb0.75I3The XRD spectrum of film；B is represented will
CH3NH3Sn0.25Pb0.75I3Perovskite thin film is in N2In atmosphere, 25 min of the lower thermal annealing of 100 °C of temperature are formed
CH3NH3Sn0.25Pb0.75I3The XRD spectrum of film.C is represented CH3NH3Sn0.25Pb0.75I3Perovskite thin film in air, temperature
What 100 °C of 25 min of lower thermal annealing, 25 min that then anneal at 100 °C of temperature under DMF hot steams were formed
CH3NH3Sn0.25Pb0.75I3The XRD spectrum of film；
Fig. 6 is CH3NH3Sn0.25Pb0.75I3The current -voltage curve of perovskite solar cell, the open-circuit voltage of the battery
0.77 V, 24 mA/cm of short-circuit current density2, fill factor 66%, electricity conversion 12.08%；
Fig. 7 is CH3NH3Sn0.25Pb0.75I3The external quantum efficiency curve of perovskite solar cell；
Wherein, the substrate of glass of 1, indium tin oxide ITO, 2, poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid
（PEDOT:PSS）Film, 3, the methyl ammonium lead iodide perovskite of tin dope（CH3NH3SnxPb1-xI3）Film, 4, [6, 6]-
Phenyl C60- methyl butyrates（PC60BM）Layer, 5, aluminium film or silverskin.
Specific implementation mode
As shown in Figure 1, tin dope methyl ammonium lead iodide perovskite solar cell has planar heterojunction structure：This reality
Applying solar battery structure in example is：ITO/PEDOT:PSS/ CH3NH3SnxPb1-xI3/PC60BM/Al。
In battery structure, the thickness of ito anode is 100 nm, 10 Ω of square resistance.
In battery structure, hole transmission layer PEDOT:The thickness of PSS is 30 nm, is formed a film using solution spin-coating method, then empty
It anneals and is made in gas, 3000 rpm of spin coating rate, 30 s of spin-coating time, 120 °C of annealing temperature, 10 min of annealing time,
In battery structure, active layer is CH3NH3Sn0.25Pb0.75I3Perovskite thin film, by methylpyridinium iodide amine（CH3NH3I）,
Lead iodide（PbI2）And stannic iodide（SnI2）According to 1.08:0.25:0.75 molar ratio is dissolved in n,N-Dimethylformamide（DMF）
And dimethyl sulfoxide (DMSO)（DMSO）In the mixed solvent, then made of spin coating proceeding and combination more solvent treatment process.
In battery structure, electron transport material is Fu Lexiyanshengwu [6,6]Phenyl C60Methyl butyrate（PC60BM）Structure
At, it being made using solution spin-coating method, 2800 rpm of spin coating rate, 30 s of spin-coating time, film thickness thickness is 40 nm,
In battery structure, cathode is prepared using vacuum thermal evaporation method, 150 nm of film thickness by Al films, vapor deposition speed
Rate is 0.5 nm/s,
Using solution spin-coating method in ITO/PEDOT:Spin coating CH in PSS substrates3NH3Sn0.25Pb0.75I3Precursor liquid, one-step method
Prepare the uniform CH of a layer thickness3NH3Sn0.25Pb0.75I3Perovskite thin film, 6300 rpm of spin coating rate, 35 s of spin-coating time,
Sec-butyl alcohol cleaning is added dropwise during this rotation once, 300 μ l of sec-butyl alcohol dosage wait for placing it in thermal station after rotary sample
In N2In atmosphere, 100 °C of 25 s of lower preannealing of temperature, be then added dropwise again sec-butyl alcohol impregnate 8 s, 300 μ l of sec-butyl alcohol dosage, with
30 s of spin coating under 6300 rpm rates afterwards, then be placed in thermal station in N2In atmosphere, 100 °C of 25 min of lower thermal annealing of temperature, tightly
Then anneal 25 min under DMF hot steams, and annealing temperature remains at 100 °C, and the film thickness finally produced is 300 nm,
The CH3NH3Sn0.25Pb0.75I3Perovskite precursor liquid is by methylpyridinium iodide amine（CH3NH3I）, lead iodide（PbI2）With
Stannic iodide（SnI2）According to 1.08:0.25:0.75 molar ratio is dissolved in n,N-Dimethylformamide（DMF）And dimethyl sulfoxide (DMSO)
（DMSO）A kind of solution for golden yellow that in the mixed solvent is formed.
The n,N-Dimethylformamide（DMF）And dimethyl sulfoxide (DMSO)（DMSO）The volume ratio of mixed solvent is 10:1,
The CH3NH31.62 mol/L of molar concentration of I, the stannic iodide（SnI2）Molar concentration be 0.375
Mol/L, the lead iodide（PbI2）Molar concentration be 1.125 mol/L,
The sec-butyl alcohol cleaning process is in spin coating CH3NH3Sn0.25Pb0.75I3It is carried out during perovskite thin film
, starting spin coating CH3NH3Sn0.25Pb0.75I3Perovskite thin film starts timing, and the 13rd s starts sec-butyl alcohol cleaning, cleaning process
It is completed in 1 s, the CH that butanol is cleaned and do not cleaned3NH3Sn0.25Pb0.75I3Film compares figure is as shown in Figures 2 and 3.
The sec-butyl alcohol soaking process is in spin coating CH3NH3Sn0.25Pb0.75I3Perovskite thin film terminates and in N2Atmosphere
In, carry out after 100 °C of 25 s of lower preannealing of temperature, CH in soaking process3NH3Sn0.25Pb0.75I3Perovskite thin film is static not
It is dynamic, 8 s of soaking time.
The annealing process is after cleaning sec-butyl alcohol for the first time by successively annealing process forms three times
CH3NH3Sn0.25Pb0.75I3Perovskite thin film, in N2In atmosphere, 25 s of preannealing is carried out at 100 °C of temperature, second annealed
Journey is the CH after impregnating sec-butyl alcohol3NH3Sn0.25Pb0.75I3Perovskite thin film is after spin coating, in N2In atmosphere, 100 ° of temperature
25 min of thermal annealing under C anneals followed by third time, is in N2In atmosphere and DMF hot steams, anneal 25 at 100 °C of temperature
Min, CH under different annealing conditions3NH3Sn0.25Pb0.75I3Film is as shown in Figure 4 and Figure 5.
Tin dope methyl ammonium lead iodide perovskite solar cell properties figure prepared by the present invention is as shown in Figure 6 and Figure 7,
It can be seen that present invention obtains the perovskite thin films of high quality, high electricity conversion is realized.
Claims (2)
1. a kind of tin dope methyl ammonium lead iodide perovskite solar cell, it is characterised in that：Deposition has one layer of uniform indium
Anode of the substrate of glass of tin-oxide ITO as battery, a redeposited strata in the substrate of glass of indium tin oxide ITO
(3,4- ethene dioxythiophenes)-polystyrolsulfon acid PEDOT:PSS films are as hole transmission layer, in poly- (3,4- ethylene two
Oxygen thiophene)-polystyrolsulfon acid PEDOT:Redeposited one layer of active layer on PSS films, then in active layer spin coating one again
Layer [6, 6]Phenyl C60- methyl butyrates PC60BM finally passes through one layer of continuous aluminium of vacuum thermal evaporation again as electron transfer layer
The cathode of film or silverskin as battery, active layer are the methyl ammonium lead iodide perovskite CH of tin dope3NH3SnxPb1-xI3It is thin
Film, x are the positive number less than 1, and the process of one layer of active layer of deposition is：By methylpyridinium iodide amine CH3NH3I, lead iodide PbI2And iodate
Tin SnI2It is 1.08 according to molar ratio:(1-x):xIt is dissolved in n,N-Dimethylformamide DMF and dimethyl sulfoxide (DMSO) DMSO mixing is molten
Form precursor liquid in agent, in precursor liquid, methylpyridinium iodide amine CH3NH3The molar concentration of I is 1.62 mol/L, N, N- dimethyl formyls
The volume ratio of amine DMF and dimethyl sulfoxide (DMSO) DMSO are 10:1, it is poly- at poly- (3,4-rthylene dioxythiophene)-using solution spin-coating method
Styrene sulfonic acid PEDOT:Spin coating precursor liquid on PSS films, spin coating rate be 6000-6500 rpm, spin-coating time 30-40s,
In the case where keeping spin coating precursor liquid after spin coating starts 5-15s, sec-butyl alcohol cleaning, scavenging period 1-1.5s, cleaning is added dropwise
Stop spin coating after continuing spin coating precursor liquid until completing precursor liquid spin-coating time after the completion, in N2100 °C of temperature is kept in atmosphere
Anneal 25 s, then sec-butyl alcohol is used to impregnate 5-10 s, remained static during immersion, rotary glass base after immersion
Bottom, speed of rotation 6000-6500 rpm, rotational time 25-35 s, then in N2100 °C of annealing 25 of temperature are kept in atmosphere
Min, finally anneal under DMF hot steams 25 min, and annealing temperature remains at 100 °C, and it is 290 nm finally to produce film thickness
The methyl ammonium lead iodide perovskite CH of the tin dope of -310 nm3NH3SnxPb1-xI3Film.
2. a kind of tin dope methyl ammonium lead iodide perovskite solar cell according to claim 1, it is characterised in that：
The substrate of glass thickness of indium tin oxide ITO is 100 nm, hole transport strata (3,4-rthylene dioxythiophene)-polystyrene
Sulfonic acid PEDOT:The thickness of PSS is 30 nm-40 nm, deposition process spin coating rate 3000 rpm, spin-coating time 30-40 s, is sunk
After the completion of product, it is 40 nm- to keep 120 °C of annealing temperature, annealing time 10-15 min, electron-transport layer thickness in air
50 nm, 2800 rpm of spin coating rate, spin-coating time 30-40 s, cathode electrode layer thickness are 150 nm, and evaporation rate is 0.5 nm/s.
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| CN112614947B (en) * | 2020-12-15 | 2022-04-01 | 中国华能集团清洁能源技术研究院有限公司 | Tin-containing perovskite precursor liquid, photoactive layer, battery and preparation method |
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Citations (3)
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| CN104300083A (en) * | 2014-09-29 | 2015-01-21 | 中国科学院广州能源研究所 | Method for preparing organic-inorganic perovskite structure heterocomplex thin film solar cell |
| CN105870337A (en) * | 2016-04-01 | 2016-08-17 | 北京化工大学 | Preparation and application of highly smooth and compact perovskite thin film material |
| CN106033796A (en) * | 2016-07-29 | 2016-10-19 | 陕西师范大学 | Perovskite thin film battery and absorbing layer thereof and preparation method of absorbing layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104300083A (en) * | 2014-09-29 | 2015-01-21 | 中国科学院广州能源研究所 | Method for preparing organic-inorganic perovskite structure heterocomplex thin film solar cell |
| CN105870337A (en) * | 2016-04-01 | 2016-08-17 | 北京化工大学 | Preparation and application of highly smooth and compact perovskite thin film material |
| CN106033796A (en) * | 2016-07-29 | 2016-10-19 | 陕西师范大学 | Perovskite thin film battery and absorbing layer thereof and preparation method of absorbing layer |
Non-Patent Citations (2)
| Title |
|---|
| 50% Sn‐Based Planar Perovskite Solar Cell with Power Conversion Efficiency up to 13.6%;Yunlong Li等;《Advanced Energy Materials》;20160829;第6卷(第24期);全文 * |
| Sec-Butyl alcohol assisted pinhole-free perovskite film growth for high-performance solar cells;Zhang F等;《Journal of Materials Chemistry A 》;20160131;第4卷(第9期);全文 * |
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