CN1079981C - 电势生成电路 - Google Patents

电势生成电路 Download PDF

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Publication number
CN1079981C
CN1079981C CN96119754A CN96119754A CN1079981C CN 1079981 C CN1079981 C CN 1079981C CN 96119754 A CN96119754 A CN 96119754A CN 96119754 A CN96119754 A CN 96119754A CN 1079981 C CN1079981 C CN 1079981C
Authority
CN
China
Prior art keywords
node
mos transistor
channel mos
output node
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN96119754A
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English (en)
Chinese (zh)
Other versions
CN1158500A (zh
Inventor
飞田洋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1158500A publication Critical patent/CN1158500A/zh
Application granted granted Critical
Publication of CN1079981C publication Critical patent/CN1079981C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Read Only Memory (AREA)
CN96119754A 1995-12-11 1996-12-11 电势生成电路 Expired - Fee Related CN1079981C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7321760A JPH09162713A (ja) 1995-12-11 1995-12-11 半導体集積回路
JP321760/95 1995-12-11

Publications (2)

Publication Number Publication Date
CN1158500A CN1158500A (zh) 1997-09-03
CN1079981C true CN1079981C (zh) 2002-02-27

Family

ID=18136144

Family Applications (4)

Application Number Title Priority Date Filing Date
CN96119756A Expired - Fee Related CN1096118C (zh) 1995-12-11 1996-12-11 中间电位产生电路
CN96119753A Expired - Fee Related CN1091974C (zh) 1995-12-11 1996-12-11 升压脉冲产生电路
CN96119754A Expired - Fee Related CN1079981C (zh) 1995-12-11 1996-12-11 电势生成电路
CN96123112A Expired - Fee Related CN1090819C (zh) 1995-12-11 1996-12-11 半导体集成电路

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CN96119756A Expired - Fee Related CN1096118C (zh) 1995-12-11 1996-12-11 中间电位产生电路
CN96119753A Expired - Fee Related CN1091974C (zh) 1995-12-11 1996-12-11 升压脉冲产生电路

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN96123112A Expired - Fee Related CN1090819C (zh) 1995-12-11 1996-12-11 半导体集成电路

Country Status (5)

Country Link
US (4) US5815446A (ko)
JP (1) JPH09162713A (ko)
KR (4) KR100270000B1 (ko)
CN (4) CN1096118C (ko)
TW (4) TW293124B (ko)

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KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
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JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
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Also Published As

Publication number Publication date
CN1090819C (zh) 2002-09-11
CN1091974C (zh) 2002-10-02
TW321805B (ko) 1997-12-01
US5812015A (en) 1998-09-22
KR970051294A (ko) 1997-07-29
TW409395B (en) 2000-10-21
CN1158500A (zh) 1997-09-03
KR970051145A (ko) 1997-07-29
TW381206B (en) 2000-02-01
JPH09162713A (ja) 1997-06-20
US5726941A (en) 1998-03-10
KR100270002B1 (ko) 2000-10-16
US5815446A (en) 1998-09-29
KR970051173A (ko) 1997-07-29
US5717324A (en) 1998-02-10
CN1158516A (zh) 1997-09-03
CN1158501A (zh) 1997-09-03
KR100270000B1 (ko) 2000-10-16
CN1096118C (zh) 2002-12-11
KR100231951B1 (ko) 1999-12-01
KR100270001B1 (ko) 2000-10-16
TW293124B (en) 1996-12-11
CN1159656A (zh) 1997-09-17

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