CN107986229A - A kind of boring device of micro electro mechanical device and its multiplexing method of preparation - Google Patents
A kind of boring device of micro electro mechanical device and its multiplexing method of preparation Download PDFInfo
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- CN107986229A CN107986229A CN201711258714.2A CN201711258714A CN107986229A CN 107986229 A CN107986229 A CN 107986229A CN 201711258714 A CN201711258714 A CN 201711258714A CN 107986229 A CN107986229 A CN 107986229A
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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Abstract
The invention discloses a kind of boring device of micro electro mechanical device and its multiplexing method of preparation, including bottom technique, block technique and metallization process, by bottom and block bonding pattern come air locking, then by the way that metallic layer graphic is drawn signal；The device includes being divided into the structure sheaf of fixed structure and movable structure, is distributed in two glassy layers of top and bottom, the movable chamber for movable structure movement for providing airtight environment, is used for the metal lead wire and pad that signal is drawn for the isolation channel of electrical isolation between several fixed structures, top glass upper surface.Compared to using a fairlead to draw a signal wire in traditional handicraft, the present invention draws multiple signal wires by a fairlead, the lead hole number needed on chip is reduced, so as to reduce the area and cost of chip.
Description
Technical field
The present invention relates to a kind of processing method of micro electro mechanical device, a kind of boring device more particularly to micro electro mechanical device and
Its multiplexing method prepared.
Background technology
With the development of micro mechanical technology, there are more and more MEMS device to realize commercial even army in recent years
With.Wherein, MEMS device achieves very big success in automotive electronics, inertial navigation and mancarried electronic aid.
Due to the generally planar technique of MEMS technology, the consideration MEMS device for signal extraction is usually using non-envelope
Close structure+edge cabling or enclosed construction+top/bottom cabling.In view of these MEMS of such as inertia device and pressure sensor
Device need airtight/Vacuum Package, therefore the scheme of enclosed construction+top/bottom cabling can meet at the same time signal draw and
The requirement of wafer-level packaging.
Traditional handicraft draws a signal wire using a fairlead, and each fairlead is together with bonding region and surface gold
The size of categoryization is usually in hundreds of micron dimensions.This fairlead for the device that gyroscope so needs more signal electrode
Huge wafer area can be consumed, so as to increase considerably the size and cost of chip.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of perforate multiplexing method of micro electro mechanical device.
The purpose of the present invention is what is be achieved through the following technical solutions：A kind of boring device of micro electro mechanical device, including
Bottom and the cap being connected with bottom by bonding pattern；The bottom includes bottom plate, is connected with bottom plate by bonding pattern
The structure sheaf connect, is etched with the first movable structure cavity on the bottom plate, isolation channel, movable structure is etched with the structure sheaf
And fixed structure, the isolation channel are arranged in fixed structure, the fixed structure is connected with movable structure by suspended structure
Together；The cap includes top plate, and the top plate is connected with structure sheaf by bonding pattern, and top plate front etching is leaded
Through hole, top plate front are additionally provided with the metal lead wire and pad drawn for signal, and the back-etching of top plate has the second movable structure
Cavity, the second movable structure cavity and the first movable structure cavity form movable structure cavity.
Preferably, the fixed structure is consolidated including first fixed structure, the second fixed structure, the 3rd fixed structure, the 4th
Determine structure；Metal lead wire includes the first metal lead wire, the second metal lead wire, the 3rd metal lead wire, the 4th metal lead wire；Described
One metal lead wire is connected with first fixed structure, and second metal lead wire is connected with the second fixed structure, the 3rd metal
Lead is connected with the 3rd fixed structure, and the 4th metal lead wire is connected with the 4th fixed structure.
Preferably, the isolation channel is arranged on first fixed structure, the second fixed structure, the 3rd fixed structure, the 4th solid
Determine between structure.
A kind of perforate multiplexing method of micro electro mechanical device, includes the following steps：
A, bottom technique
（1）The first movable structure cavity is etched on bottom plate；
（2）Bottom plate is sealed with structure sheaf by bonding pattern；
（3）Isolation channel is etched on structure sheaf；
（4）Isolation channel is backfilled by depositing operation and carries out surface planarisation, removes unnecessary filler；
（5）Structure sheaf is etched into movable structure and fixed structure this two parts, the movable structure and fixed structure pass through outstanding
Hanging hang structure links together；
B, block technique
（1）Go out the second movable structure cavity in top plate back-etching；
（2）Lead hole is etched in top plate front；
（3）Cap and bottom are bonded together, form airtight environment；
C, metallization process
（1）If fixed structure is divided into the stem portion being electrically isolated from each other by isolation channel；
（2）Deposit to form metal layer in block layer surface, then by metallic layer graphic and ultimately form electrical connection, the gold
Belong to layer and be patterned into some metal lead wires being electrically isolated from one another.
Preferably, in the bottom technique, the bottom plate is glassy layer, and the structure sheaf is silicon chip, bottom plate and structure
Layer is sealed by silicon glass bonding pattern.
Preferably, in the block technique, the top plate is glassy layer, and cap is bonded in one with bottom by silicon glass
Rise, form airtight environment.
Preferably, in the bottom technique, the bottom plate is silicon chip, and the structure sheaf is silicon chip, bottom plate and structure sheaf
10 are sealed by Si-Si bonding mode；Be equipped with insulating layer between the bottom plate and structure sheaf, the insulating layer using silica,
The material such as silicon nitride or glass.
Preferably, in the block technique, the top plate is silicon chip, and the cap is existed with bottom by Si-Si bonding
Together, form airtight environment, be equipped with insulating layer between top plate and structure sheaf, the insulating layer use silica, silicon nitride or
The materials such as glass.
Preferably, in the block technique, the top plate is silicon chip, and the cap is existed with bottom by Si-Si bonding
Together, airtight environment is formed, the bottom uses soi wafer.
Preferably, in the bottom technique, the filler is electrical insulator, such as silica.
The beneficial effects of the invention are as follows：
1. draw a signal wire using a fairlead compared in traditional handicraft, the present invention is by by close several in locus
A electrode is drawn by a fairlead, and a fairlead draws multiple signal wires, reduces the lead hole number needed on chip,
So as to reduce the area and cost of chip, especially for answering by perforate for the more device of this kind of electrode of gyroscope
With, can by perforate take area be reduced to 1/2 or even 1/4, the difference that chip total area ratio is accounted for according to perforated area can
To reduce the gross area of chip in 1/4 order of magnitude；
2. the present invention is by bottom plate and structure sheaf bonded seal, cap and bottom bonded seal, pass through the side of the bonding of silicon glass twice
Formula ensures being effectively formed for airtight environment so that the reliability of micro electro mechanical device sealing technology is high；
3. top plate and bottom plate can be selected glass material or select the structure of silicon chip+insulating materials in the present invention, good close playing
While envelope, it is avoided that signal wire when transmitting signal because letting out electricity and failure.
Brief description of the drawings
Fig. 1 is the profile of perforate multiplexing structure in the present invention；
Fig. 2 is the top view of perforate multiplexing structure in the present invention；
Fig. 3 is the schematic diagram of midsole layer process of the present invention；
Fig. 4 is the schematic diagram of block technique in the present invention；
Fig. 5 is the schematic diagram of metallization process in the present invention；
Fig. 6 is the top view of A- A ' sections in Fig. 5；
Fig. 7 is the overall structure diagram in second embodiment of the invention；
In figure, 10- structure sheafs, 101- movable structures, 102- fixed structures, 102-1- first fixed structures, 102-2- second is solid
Determine structure, the 3rd fixed structures of 102-3-, the 4th fixed structures of 102-4-, 11- bottom plates, 111- the first movable structure cavitys, 12-
Top plate, 121- the second movable structure cavitys, 13- isolation channels, 14- metal lead wires, the first metal lead wires of 141-, the second metals of 142-
Lead, the 3rd metal lead wires of 143-, the 4th metal lead wires of 144-, 15- pads, 31- states a, 32- state b, 33- state c, 34-
State d, 35- state e, 41- state f, 42- state g, 43- state h, 421- through hole, 51- state Is, 6- insulating layers.
Embodiment
Technical scheme is described in further detail below in conjunction with the accompanying drawings, but protection scope of the present invention is not limited to
It is as described below.
Embodiment 1
As shown in Figure 1, 2, a kind of boring device of micro electro mechanical device, including bottom and be connected with bottom by bonding pattern
Cap；Bottom includes bottom plate 11, the structure sheaf 10 being connected with bottom plate 11 by bonding pattern, and being etched with first on bottom plate 11 can
Structural cavity body 111 is moved, is etched with isolation channel 13, movable structure 101 and fixed structure 102 on structure sheaf 10, fixed structure 102 wraps
First fixed structure 102-1, the second fixed structure 102-2, the 3rd fixed structure 102-3, the 4th fixed structure 102-4 are included, every
Will be electrically mutually isolated in each fixed structure from groove 13, fixed structure 102 is connected to one with movable structure 101 by suspended structure
Rise；Cap includes top plate 12, and top plate 12 is connected with structure sheaf 10 by bonding pattern, and 12 front of top plate is etched with lead hole
421,12 front of top plate is additionally provided with the metal lead wire 14 and pad 15 drawn for signal, and metal lead wire 14 draws including the first metal
Line 141, the second metal lead wire 142, the 3rd metal lead wire 143, the 4th metal lead wire 144, the first metal lead wire 141 and first are solid
Determine structure 102-1 to be connected, the second metal lead wire 142 is connected with the second fixed structure 102-2, the 3rd metal lead wire 143 and the 3rd
Fixed structure 102-3 is connected, and the 4th metal lead wire 144 is connected with the 4th fixed structure 102-4.
A kind of perforate multiplexing method of micro electro mechanical device, including bottom technique, block technique and metallization process；
Bottom technique includes bottom glass layer and structure layer process, and bottom includes bottom plate 11 and the knot connected by bonding pattern
Structure layer 10, bottom plate 11 use glass with top plate 12, and structure sheaf 10 uses silicon chip.
As shown in figure 3, bottom technique includes：
First, the first movable structure cavity 111 is etched on bottom plate 11, forms state a31；
Secondly, bottom plate 11 and structure sheaf 10 are sealed by silicon glass bonding pattern, forms shape body b32；
Secondly, isolation channel 13 is etched on structure sheaf 10, forms state c33；
Secondly, isolation channel 13 is backfilled by depositing operation and carries out surface planarisation, remove unnecessary filler, the filler
For silica, state d34 is formed；
Finally, structure sheaf 10 is etched into movable structure 101 and fixed structure 102 this two parts, the movable structure 101 and solid
Determine structure 102 to link together by suspended structure, form state e35；The movable structure 101 is in the first movable structure cavity
Moved in 111.
As shown in figure 4, block technique includes：
Cap includes top plate 12,
First, go out the second movable structure cavity 121 in 12 back-etching of top plate, form state f41；
Secondly, lead hole 421 is etched in 12 front of top plate, forms state g42；
Finally, by cap and bottom by silicon glass bonding pattern together with, form airtight environment, form state h43；
Such as Fig. 5, shown in 6, metallization process includes：
First, fixed structure 102 is divided and consolidated for first fixed structure 102-1, the second fixed structure 102-2, the 3rd by isolation channel 13
Determine structure 102-3, the 4th fixed structure 102-4, it is electrically mutually isolated in each fixed structure；
Then, deposit to form metal layer in block layer surface, then by metallic layer graphic and ultimately form electrical connection, formed
State i51；The top-level metallic is patterned into some metal lead wires 14 being electrically isolated from one another, and metal lead wire 14 includes first
Metal lead wire 141, the second metal lead wire 142, the 3rd metal lead wire 143, the 4th metal lead wire 144.12 surface of top plate is additionally provided with
Pad 15, metal lead wire 14 are used to draw signal with pad 15.
Embodiment 2
As shown in Figure 1, 2, a kind of boring device of micro electro mechanical device, including bottom and be connected with bottom by bonding pattern
Cap；Bottom includes bottom plate 11, the structure sheaf 10 being connected with bottom plate 11 by bonding pattern, and being etched with first on bottom plate 11 can
Structural cavity body 111 is moved, is etched with isolation channel 13, movable structure 101 and fixed structure 102 on structure sheaf 10, fixed structure 102 wraps
First fixed structure 102-1, the second fixed structure 102-2, the 3rd fixed structure 102-3, the 4th fixed structure 102-4 are included, every
Will be electrically mutually isolated in each fixed structure from groove 13, fixed structure 102 is connected to one with movable structure 101 by suspended structure
Rise；Cap includes top plate 12, and top plate 12 is connected with structure sheaf 10 by bonding pattern, and 12 front of top plate is etched with lead hole
421,12 front of top plate is additionally provided with the metal lead wire 14 and pad 15 drawn for signal, and metal lead wire 14 draws including the first metal
Line 141, the second metal lead wire 142, the 3rd metal lead wire 143, the 4th metal lead wire 144, the first metal lead wire 141 and first are solid
Determine structure 102-1 to be connected, the second metal lead wire 142 is connected with the second fixed structure 102-2, the 3rd metal lead wire 143 and the 3rd
Fixed structure 102-3 is connected, and the 4th metal lead wire 144 is connected with the 4th fixed structure 102-4.
As shown in fig. 7, a kind of perforate multiplexing method of micro electro mechanical device, including bottom technique, block technique and metal
Chemical industry skill；
Bottom technique includes bottom silicon wafer layer and structure layer process, and bottom includes bottom plate 11 and the knot connected by bonding pattern
Structure layer 10, bottom plate 11 use silicon chip with top plate 12, and structure sheaf 10 also uses silicon chip.
Bottom technique includes：
First, the first movable structure cavity 111 is etched on bottom plate 11, forms state a31；
Secondly, bottom plate 11 is sealed with structure sheaf 10 by Si-Si bonding mode, forms shape body b32；
Secondly, isolation channel 13 is etched on structure sheaf 10, forms state c33；
Secondly, isolation channel 13 is backfilled by depositing operation and carries out surface planarisation, remove unnecessary filler, the filler
For silica, state d34 is formed；
Finally, structure sheaf 10 is etched into movable structure 101 and fixed structure 102 this two parts, the movable structure 101 and solid
Determine structure 102 to link together by suspended structure, form state e35；The movable structure 101 is in the first movable structure cavity
Moved in 111.
Block technique includes：
Cap includes top plate 12,
First, go out the second movable structure cavity 121 in 12 back-etching of top plate, form state f41；
Secondly, lead hole 421 is etched in 12 front of top plate, forms state g42；
Finally, by cap and bottom by Si-Si bonding mode together with, form airtight environment, form state h43；
Metallization process includes：
First, fixed structure 102 is divided and consolidated for first fixed structure 102-1, the second fixed structure 102-2, the 3rd by isolation channel 13
Determine structure 102-3, the 4th fixed structure 102-4, it is electrically mutually isolated in each fixed structure；
Then, deposit to form metal layer in block layer surface, then by metallic layer graphic and ultimately form electrical connection, formed
State i51；Top-level metallic is patterned into some metal lead wires 14 being electrically isolated from one another, and metal lead wire 14 includes the first metal
Lead 141, the second metal lead wire 142, the 3rd metal lead wire 143, the 4th metal lead wire 144；12 surface of top plate is additionally provided with pad
15, metal lead wire 14 is used to draw signal with pad 15.
Wherein, insulating layer 6, top plate 12 and knot are designed between bottom plate 11 and structure sheaf 10, top plate 12 and structure sheaf 10
Insulating layer 6 between structure layer 10 is provided only between 12 part of top plate and the structure sheaf 10 beyond metal lead wire 14, i.e., metal draws
Insulating layer 6 is not provided between line 14 and fixed structure 102, insulating layer 6 is kept away using materials such as silica, silicon nitride or glass
Exempt from signal wire when transmitting signal because letting out electricity and failure.
Embodiment 3
As shown in Figure 1, 2, a kind of boring device of micro electro mechanical device, including bottom and be connected with bottom by bonding pattern
Cap；Bottom includes bottom plate 11, the structure sheaf 10 being connected with bottom plate 11 by bonding pattern, and being etched with first on bottom plate 11 can
Structural cavity body 111 is moved, is etched with isolation channel 13, movable structure 101 and fixed structure 102 on structure sheaf 10, fixed structure 102 wraps
First fixed structure 102-1, the second fixed structure 102-2, the 3rd fixed structure 102-3, the 4th fixed structure 102-4 are included, every
Will be electrically mutually isolated in each fixed structure from groove 13, fixed structure 102 is connected to one with movable structure 101 by suspended structure
Rise；Cap includes top plate 12, and top plate 12 is connected with structure sheaf 10 by bonding pattern, and 12 front of top plate is etched with lead hole
421,12 front of top plate is additionally provided with the metal lead wire 14 and pad 15 drawn for signal, and metal lead wire 14 draws including the first metal
Line 141, the second metal lead wire 142, the 3rd metal lead wire 143, the 4th metal lead wire 144, the first metal lead wire 141 and first are solid
Determine structure 102-1 to be connected, the second metal lead wire 142 is connected with the second fixed structure 102-2, the 3rd metal lead wire 143 and the 3rd
Fixed structure 102-3 is connected, and the 4th metal lead wire 144 is connected with the 4th fixed structure 102-4.
A kind of perforate multiplexing method of micro electro mechanical device, including bottom technique, block technique and metallization process；
Bottom technique includes bottom silicon wafer layer and structure layer process, and bottom includes bottom plate 11 and the knot connected by bonding pattern
Structure layer 10, top plate 12 use glass, and structure sheaf 10, bottom plate 11 use silicon chip.
Bottom technique includes：
First, the first movable structure cavity 111 is etched on bottom plate 11, forms state a31；
Secondly, bottom plate 11 is sealed with structure sheaf 10 by Si-Si bonding mode, forms shape body b32；
Secondly, isolation channel 13 is etched on structure sheaf 10, forms state c33；
Secondly, isolation channel 13 is backfilled by depositing operation and carries out surface planarisation, remove unnecessary filler, the filler
For silica, state d34 is formed；
Finally, structure sheaf 10 is etched into movable structure 101 and fixed structure 102 this two parts, the movable structure 101 and solid
Determine structure 102 to link together by suspended structure, form state e35；The movable structure 101 is in the first movable structure cavity
Moved in 111.
Block technique includes：
Cap includes top plate 12,
First, go out the second movable structure cavity 121 in 12 back-etching of top plate, form state f41；
Secondly, lead hole 421 is etched in 12 front of top plate, forms state g42；
Finally, by cap and bottom by Si-Si bonding mode together with, form airtight environment, form state h43；
Metallization process includes：
First, fixed structure 102 is divided and consolidated for first fixed structure 102-1, the second fixed structure 102-2, the 3rd by isolation channel 13
Determine structure 102-3, the 4th fixed structure 102-4, it is electrically mutually isolated in each fixed structure；
Then, deposit to form metal layer in block layer surface, then by metallic layer graphic and ultimately form electrical connection, formed
State i51；Top-level metallic is patterned into some metal lead wires 14 being electrically isolated from one another, and metal lead wire 14 includes the first metal
Lead 141, the second metal lead wire 142, the 3rd metal lead wire 143, the 4th metal lead wire 144；12 surface of top plate is additionally provided with pad
15, metal lead wire 14 is used to draw signal with pad 15.
Wherein, insulating layer is equipped between bottom plate 11 and structure sheaf 10, insulating layer uses silica, silicon nitride or glass
Deng material, avoid signal wire when transmitting signal because letting out electricity and failure.
Embodiment 4
Further optimize on the basis of a kind of perforate multiplexing method of micro electro mechanical device described in embodiment 2 or 3, bottom uses
Soi wafer.With soi wafer come being bonded instead of bottom silicon chip and structure sheaf, wherein the substrate of soi wafer as bottom plate, aoxidize
Layer is used as structure sheaf as insulating layer, top layer silicon, is equally avoided that signal wire when transmitting signal because of the problem of letting out electric and failure.
Embodiment 5
As shown in Figure 1, 2, a kind of boring device of micro electro mechanical device, including bottom and be connected with bottom by bonding pattern
Cap；Bottom includes bottom plate 11, the structure sheaf 10 being connected with bottom plate 11 by bonding pattern, and being etched with first on bottom plate 11 can
Structural cavity body 111 is moved, is etched with isolation channel 13, movable structure 101 and fixed structure 102 on structure sheaf 10, fixed structure 102 wraps
First fixed structure 102-1, the second fixed structure 102-2, the 3rd fixed structure 102-3, the 4th fixed structure 102-4 are included, every
Will be electrically mutually isolated in each fixed structure from groove 13, fixed structure 102 is connected to one with movable structure 101 by suspended structure
Rise；Cap includes top plate 12, and top plate 12 is connected with structure sheaf 10 by bonding pattern, and 12 front of top plate is etched with lead hole
421,12 front of top plate is additionally provided with the metal lead wire 14 and pad 15 drawn for signal, and metal lead wire 14 draws including the first metal
Line 141, the second metal lead wire 142, the 3rd metal lead wire 143, the 4th metal lead wire 144, the first metal lead wire 141 and first are solid
Determine structure 102-1 to be connected, the second metal lead wire 142 is connected with the second fixed structure 102-2, the 3rd metal lead wire 143 and the 3rd
Fixed structure 102-3 is connected, and the 4th metal lead wire 144 is connected with the 4th fixed structure 102-4.
A kind of perforate multiplexing method of micro electro mechanical device, including bottom technique, block technique and metallization process；
Bottom technique includes bottom silicon wafer layer and structure layer process, and bottom includes bottom plate 11 and the knot connected by bonding pattern
Structure layer 10, bottom plate 11 use glass, and structure sheaf 10, top plate 12 use silicon chip.
Bottom technique includes：
First, the first movable structure cavity 111 is etched on bottom plate 11, forms state a31；
Secondly, bottom plate 11 is sealed with structure sheaf 10 by Si-Si bonding mode, forms shape body b32；
Secondly, isolation channel 13 is etched on structure sheaf 10, forms state c33；
Secondly, isolation channel 13 is backfilled by depositing operation and carries out surface planarisation, remove unnecessary filler, the filler
For silica, state d34 is formed；
Finally, structure sheaf 10 is etched into movable structure 101 and fixed structure 102 this two parts, the movable structure 101 and solid
Determine structure 102 to link together by suspended structure, form state e35；The movable structure 101 is in the first movable structure cavity
Moved in 111.
Block technique includes：
Cap includes top plate 12,
First, go out the second movable structure cavity 121 in 12 back-etching of top plate, form state f41；
Secondly, lead hole 421 is etched in 12 front of top plate, forms state g42；
Finally, by cap and bottom by Si-Si bonding mode together with, form airtight environment, form state h43；
Metallization process includes：
First, fixed structure 102 is divided and consolidated for first fixed structure 102-1, the second fixed structure 102-2, the 3rd by isolation channel 13
Determine structure 102-3, the 4th fixed structure 102-4, it is electrically mutually isolated in each fixed structure；
Then, deposit to form metal layer in block layer surface, then by metallic layer graphic and ultimately form electrical connection, formed
State i51；Top-level metallic is patterned into some metal lead wires 14 being electrically isolated from one another, and metal lead wire 14 includes the first metal
Lead 141, the second metal lead wire 142, the 3rd metal lead wire 143, the 4th metal lead wire 144；12 surface of top plate is additionally provided with pad
15, metal lead wire 14 is used to draw signal with pad 15.
Wherein, be equipped with insulating layer 6 between top plate 12 and structure sheaf 10, the insulating layer 6 be provided only on metal lead wire 14 with
Between outer 12 part of top plate and structure sheaf 10, i.e., insulating layer 6 is not provided between metal lead wire 14 and fixed structure 102, insulated
Layer 6 avoids signal wire when transmitting signal because letting out electricity and failure using materials such as silica, silicon nitride or glass.
The above is only the preferred embodiment of the present invention, it should be understood that the present invention is not limited to described herein
Form, is not to be taken as the exclusion to other embodiment, and can be used for various other combinations, modification and environment, and can be at this
In the text contemplated scope, it is modified by the technology or knowledge of above-mentioned teaching or association area.And those skilled in the art institute into
Capable modifications and changes do not depart from the spirit and scope of the present invention, then all should be in the protection domain of appended claims of the present invention
It is interior.
Claims (10)
- A kind of 1. boring device of micro electro mechanical device, it is characterised in that：It is connected including bottom and with bottom by bonding pattern Cap；The bottom includes bottom plate（11）With bottom plate（11）The structure sheaf connected by bonding pattern（10）, the bottom plate （11）On be etched with the first movable structure cavity（111）, the structure sheaf（10）On be etched with isolation channel（13）, movable structure （101）And fixed structure（102）, the isolation channel（13）It is arranged on fixed structure（102）It is interior, the fixed structure（102）With Movable structure（101）Linked together by suspended structure, fixed structure（102）If it is divided into stem portion；The cap bag Include top plate（12）, the top plate（12）With structure sheaf（10）Connected by bonding pattern, top plate（12）Front etching is leaded logical Hole（421）, top plate（12）Front is additionally provided with some metal lead wires drawn for signal（14）And pad（15）；The back side of top plate It is etched with the second movable structure cavity（121）, the second movable structure cavity（121）With the first movable structure cavity（111） Form movable structure cavity.
- A kind of 2. boring device of micro electro mechanical device according to claim 1, it is characterised in that：The fixed structure （102）Including first fixed structure（102-1）, the second fixed structure（102-2）, the 3rd fixed structure（102-3）, the 4th fix Structure（102-4）；Metal lead wire（14）Including the first metal lead wire（141）, the second metal lead wire（142）, the 3rd metal lead wire （143）, the 4th metal lead wire（144）；First metal lead wire（141）With first fixed structure（102-1）It is connected, described the Two metal lead wires（142）With the second fixed structure（102-2）It is connected, the 3rd metal lead wire（143）With the 3rd fixed structure （102-3）It is connected, the 4th metal lead wire（144）With the 4th fixed structure（102-4）It is connected.
- A kind of 3. boring device of micro electro mechanical device according to claim 2, it is characterised in that：The isolation channel（13）If Put in first fixed structure（102-1）, the second fixed structure（102-2）, the 3rd fixed structure（102-3）, the 4th fixed structure （102-4）Between.
- It is 4. a kind of such as the perforate multiplexing method of claim 1-3 any one of them micro electro mechanical devices, it is characterised in that：Including such as Lower step：Bottom techniqueIn bottom plate（11）On etch the first movable structure cavity（111）；Bottom plate（11）With structure sheaf（10）Sealed by bonding pattern；In structure sheaf（10）On etch isolation channel（13）；Isolation channel is backfilled by depositing operation（13）And surface planarisation is carried out, remove unnecessary filler；By structure sheaf（10）It is etched into movable structure（101）And fixed structure（102）This two parts, the movable structure（101） And fixed structure（102）Linked together by suspended structure；Block techniqueIn top plate（12）Back-etching goes out the second movable structure cavity（121）；In top plate（12）Front etches lead hole（421）；Cap and bottom are bonded together, form airtight environment；Metallization processIsolation channel（13）By fixed structure（102）If it is divided into the stem portion being electrically isolated from each other；Deposit to form metal layer in block layer surface, then by metallic layer graphic and ultimately form electrical connection, the metal Layer is patterned into some metal lead wires being electrically isolated from one another（14）.
- A kind of 5. perforate multiplexing method of micro electro mechanical device according to claim 4, it is characterised in that：In the bottom work In skill, the bottom plate（11）For glassy layer, the structure sheaf（10）For silicon chip, bottom plate（11）With structure sheaf（10）Pass through silicon glass key Conjunction mode seals.
- A kind of 6. perforate multiplexing method of micro electro mechanical device according to claim 5, it is characterised in that：In the block work In skill, the top plate（12）For glassy layer, cap is bonded together with bottom by silicon glass, forms airtight environment.
- A kind of 7. perforate multiplexing method of micro electro mechanical device according to claim 4, it is characterised in that：In the bottom work In skill, the bottom plate（11）For silicon chip, the structure sheaf（10）For silicon chip, bottom plate（11）With structure sheaf（10）Pass through Si-Si bonding Mode seals；The bottom plate（11）With structure sheaf（10）Between be equipped with insulating layer（6）, the insulating layer is using silica, nitrogen The material such as SiClx or glass.
- A kind of 8. perforate multiplexing method of micro electro mechanical device according to claim 7, it is characterised in that：In the block work In skill, the top plate（12）For silicon chip, the cap and bottom by Si-Si bonding together with, form airtight environment, top plate （12）With structure sheaf（10）Between be equipped with insulating layer（6）, the insulating layer（6）Using materials such as silica, silicon nitride or glass Material.
- A kind of 9. perforate multiplexing method of micro electro mechanical device according to claim 4, it is characterised in that：In the block work In skill, the top plate（12）For silicon chip, the cap and bottom by Si-Si bonding together with, form airtight environment, it is described Bottom uses soi wafer.
- 10. according to a kind of perforate multiplexing method of micro electro mechanical device of claim 4-9 any one of them, it is characterised in that： In the bottom technique, the filler is electrical insulator, such as silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711258714.2A CN107986229B (en) | 2017-12-04 | 2017-12-04 | Opening device of micro-electro-mechanical device and preparation multiplexing method thereof |
Applications Claiming Priority (1)
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