CN107978567B - 一种三维陶瓷基板及其制备方法 - Google Patents
一种三维陶瓷基板及其制备方法 Download PDFInfo
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- CN107978567B CN107978567B CN201711227522.5A CN201711227522A CN107978567B CN 107978567 B CN107978567 B CN 107978567B CN 201711227522 A CN201711227522 A CN 201711227522A CN 107978567 B CN107978567 B CN 107978567B
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- ceramic substrate
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- 239000000919 ceramic Substances 0.000 title claims abstract description 236
- 239000000758 substrate Substances 0.000 title claims abstract description 163
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000002002 slurry Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001868 water Inorganic materials 0.000 claims abstract description 9
- 238000013035 low temperature curing Methods 0.000 claims abstract description 8
- 239000012188 paraffin wax Substances 0.000 claims description 14
- 238000011049 filling Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 108010010803 Gelatin Proteins 0.000 claims description 6
- 229910052910 alkali metal silicate Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 229920000159 gelatin Polymers 0.000 claims description 6
- 239000008273 gelatin Substances 0.000 claims description 6
- 235000019322 gelatine Nutrition 0.000 claims description 6
- 235000011852 gelatine desserts Nutrition 0.000 claims description 6
- 208000005156 Dehydration Diseases 0.000 claims description 4
- 239000004111 Potassium silicate Substances 0.000 claims description 4
- 239000004115 Sodium Silicate Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000001723 curing Methods 0.000 claims description 4
- 230000018044 dehydration Effects 0.000 claims description 4
- 238000006297 dehydration reaction Methods 0.000 claims description 4
- 239000002861 polymer material Substances 0.000 claims description 4
- 229910052913 potassium silicate Inorganic materials 0.000 claims description 4
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 claims description 4
- 235000019353 potassium silicate Nutrition 0.000 claims description 4
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 4
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical group [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 4
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052912 lithium silicate Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 15
- 239000002253 acid Substances 0.000 abstract description 4
- 239000003513 alkali Substances 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010344 co-firing Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229940115440 aluminum sodium silicate Drugs 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711227522.5A CN107978567B (zh) | 2017-11-29 | 2017-11-29 | 一种三维陶瓷基板及其制备方法 |
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CN201711227522.5A CN107978567B (zh) | 2017-11-29 | 2017-11-29 | 一种三维陶瓷基板及其制备方法 |
Publications (2)
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CN107978567A CN107978567A (zh) | 2018-05-01 |
CN107978567B true CN107978567B (zh) | 2020-11-06 |
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CN201711227522.5A Active CN107978567B (zh) | 2017-11-29 | 2017-11-29 | 一种三维陶瓷基板及其制备方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108811307B (zh) * | 2018-06-29 | 2020-09-18 | 华中科技大学 | 一种三维陶瓷电路板及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000073241A1 (en) * | 1999-06-02 | 2000-12-07 | Sandia Corporation | Fabrication of ceramic microstructures from polymer compositions containing ceramic nanoparticles |
CN101786868A (zh) * | 2010-01-20 | 2010-07-28 | 湖南科技大学 | 一种免烧耐酸陶瓷的制备方法 |
JP2012234947A (ja) * | 2011-04-28 | 2012-11-29 | Mitsubishi Chemicals Corp | 半導体発光装置用樹脂パッケージ及び該樹脂パッケージを有してなる半導体発光装置並びにそれらの製造方法 |
JP2013040343A (ja) * | 2012-10-23 | 2013-02-28 | Hitachi Chemical Co Ltd | リフレクターの製造方法及びled装置 |
JP2013043329A (ja) * | 2011-08-23 | 2013-03-04 | Towa Corp | 反射体付基板の製造方法及び製造装置 |
KR20130027709A (ko) * | 2011-09-08 | 2013-03-18 | 삼성테크윈 주식회사 | 엘이디용 리플렉터 제조 방법 |
CN106981458A (zh) * | 2017-03-24 | 2017-07-25 | 武汉利之达科技股份有限公司 | 一种含腔体结构的三维陶瓷基板及其制备方法 |
-
2017
- 2017-11-29 CN CN201711227522.5A patent/CN107978567B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000073241A1 (en) * | 1999-06-02 | 2000-12-07 | Sandia Corporation | Fabrication of ceramic microstructures from polymer compositions containing ceramic nanoparticles |
CN101786868A (zh) * | 2010-01-20 | 2010-07-28 | 湖南科技大学 | 一种免烧耐酸陶瓷的制备方法 |
JP2012234947A (ja) * | 2011-04-28 | 2012-11-29 | Mitsubishi Chemicals Corp | 半導体発光装置用樹脂パッケージ及び該樹脂パッケージを有してなる半導体発光装置並びにそれらの製造方法 |
JP2013043329A (ja) * | 2011-08-23 | 2013-03-04 | Towa Corp | 反射体付基板の製造方法及び製造装置 |
KR20130027709A (ko) * | 2011-09-08 | 2013-03-18 | 삼성테크윈 주식회사 | 엘이디용 리플렉터 제조 방법 |
JP2013040343A (ja) * | 2012-10-23 | 2013-02-28 | Hitachi Chemical Co Ltd | リフレクターの製造方法及びled装置 |
CN106981458A (zh) * | 2017-03-24 | 2017-07-25 | 武汉利之达科技股份有限公司 | 一种含腔体结构的三维陶瓷基板及其制备方法 |
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PB01 | Publication | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20190109 Address after: 430200 Wuhan four East Lake Road Development Zone, Hubei 40 Gezhouba Dam 40 Sun City 23 building 103 room. Applicant after: WUHAN LIZHIDA TECHNOLOGY CO.,LTD. Address before: 430074 Hubei Province, Wuhan city Hongshan District Luoyu Road No. 1037 Applicant before: Huazhong University of Science and Technology |
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GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: The invention relates to a three-dimensional ceramic substrate and a preparation method thereof Effective date of registration: 20220317 Granted publication date: 20201106 Pledgee: Bank of China Limited Wuhan provincial branch Pledgor: WUHAN LIZHIDA TECHNOLOGY CO.,LTD. Registration number: Y2022420000066 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20201106 Pledgee: Bank of China Limited Wuhan provincial branch Pledgor: WUHAN LIZHIDA TECHNOLOGY CO.,LTD. Registration number: Y2022420000066 |