CN107976261A - A kind of temperature sensing circuit and a kind of temperature checking method - Google Patents
A kind of temperature sensing circuit and a kind of temperature checking method Download PDFInfo
- Publication number
- CN107976261A CN107976261A CN201711266449.2A CN201711266449A CN107976261A CN 107976261 A CN107976261 A CN 107976261A CN 201711266449 A CN201711266449 A CN 201711266449A CN 107976261 A CN107976261 A CN 107976261A
- Authority
- CN
- China
- Prior art keywords
- oxide
- metal
- semiconductor
- voltage
- triode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 230000008569 process Effects 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims description 122
- 230000005611 electricity Effects 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 230000010259 detection of temperature stimulus Effects 0.000 abstract description 2
- 230000001276 controlling effect Effects 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of temperature sensing circuit and a kind of temperature checking method, including：A kind of temperature sensing circuit, including：Voltage generation circuit, the positive and negative reference voltage circuits of ADC, adc circuit and decoder；The voltage generation circuit, for generating default bandgap voltage reference and voltage to be detected；The positive and negative reference circuits of ADC, for bandgap voltage reference to be converted to the positive benchmark of ADC and negative reference voltage；The adc circuit, for the voltage to be detected that will be generated in the voltage generation circuit, digital signal is generated after carrying out analog-to-digital conversion process；The decoder, for the digital signal that the adc circuit generates into row decoding, to be shown to the temperature information of current chip to be measured.Its purpose obtains the analog signal of temperature, realizes the detection of temperature information, so as to reduce the area of chip structure by increasing a branch on band-gap reference circuit.
Description
Technical field
The present invention relates to integrated circuit fields, more particularly to a kind of temperature sensing circuit and a kind of temperature checking method.
Background technology
As semiconductor technology continues to develop, the size of semiconductor devices is less and less at present.With transistor on chip
The raising of density, chip power-consumption increase therewith.But power consumption brings problems with after becoming larger.
The temperature overheating of chip, so as to cause more harmful effects：1) chip operation slows.2) chip thermostabilization
Property, seriously result even in chip and burn.
The application is based on the problem of above, there is provided solves the technical solution of technical problem.
The content of the invention
The present invention's provides a kind of temperature sensing circuit and a kind of temperature checking method, its purpose passes through in band-gap reference
Increase a branch on circuit, obtain the analog signal of temperature, realize the detection of temperature information, so as to reduce the face of chip structure
Product.
Technical solution provided by the invention is as follows：
A kind of temperature sensing circuit, including：Voltage generation circuit, ADC positive and negative reference voltage circuits and are translated adc circuit
Code device；The voltage generation circuit, for generating default bandgap voltage reference and voltage to be detected；The positive and negative benchmark of ADC
Circuit, for bandgap voltage reference to be converted to the positive benchmark of ADC and negative reference voltage；The adc circuit, for by the electricity
The voltage to be detected generated in pressure generative circuit, digital signal is generated after carrying out analog-to-digital conversion process；The decoder, for inciting somebody to action
The digital signal of adc circuit generation shows the temperature information of current chip to be measured into row decoding.
Preferably, the voltage generation circuit：Including：8 metal-oxide-semiconductors, metal-oxide-semiconductor M1~metal-oxide-semiconductor M8；3 triodes, respectively
For：Triode Q1, triode Q2, triode Q3；The gate terminal of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is sequentially connected in series；The metal-oxide-semiconductor
The source terminal of M1~metal-oxide-semiconductor M4 is connected to power supply side side by side；The drain electrode end of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 successively with institute
The source terminal for stating metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 corresponds to electrical connection；The gate terminal of the metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 is sequentially connected in series；Institute
State the drain electrode end of metal-oxide-semiconductor the M5 collector terminal with the triode Q1, the base terminal of the triode Q1, the triode respectively
The base terminal of Q2 is electrically connected；The emitter terminal connection common of the triode Q1；The collector terminal of the triode Q2 with
The drain electrode end of the metal-oxide-semiconductor M6 is electrically connected；The emitter terminal of the triode Q2 by described in first resistor R1 connections publicly
End；The drain electrode end of the metal-oxide-semiconductor M7 is electrically connected by second resistance R2 with the collector terminal and base terminal of the triode Q3, defeated
Go out the default bandgap voltage reference；The emitter terminal of the triode Q3 connects the common；The leakage of the metal-oxide-semiconductor M8
Extremely by the 3rd resistor R3 connections common, the voltage to be detected is exported.
Preferably, positive and negative reference voltage circuit, the positive and negative reference voltage circuit respectively with the voltage generation circuit, institute
Adc circuit electrical connection is stated, for the default bandgap voltage reference to be modulated into positive reference voltage signal and negative reference voltage letter
Number；The normal phase input end of operational amplifier U1 inputs the default bandgap voltage reference；The output terminal of the operational amplifier U1
It is electrically connected by the one end of resistance R4 respectively with the reverse input end of the operational amplifier U1 and the R5 of resistance；The electricity
The other end of the R5 of resistance passes through the resistance R6 connections common.
Preferably, the adc circuit includes：The comparator of first quantity, and the number of comparators pair with the first quantity
The resistance for the second quantity answered；The normal phase input end of the comparator of first quantity and the drain electrode end of the metal-oxide-semiconductor M8 are electrically connected
Connect, input the voltage to be detected and connect；The resistance of second quantity is electrically connected in series；The electricity of the second quantity after series connection
One end of resistance is electrically connected with the output terminal of the operational amplifier U1, receives the positive reference voltage signal；Second after series connection
The other end of the resistance of quantity is electrically connected with the other end of the R5 of the resistance, receives the negative reference voltage signal；Often
The common port of two series resistances is electrically connected with the inverting input of the operational amplifier, and the first quantity is less than the second quantity.
Preferably, including：The data message input terminal of the decoder is connected with the output terminal of the adc circuit；It is described
The data message output terminal output multi-bit binary signal of decoder.
Preferably, further include：Clock circuit is controlled, is electrically connected with the adc circuit, for controlling the adc circuit
Working status.
A kind of method of temperature detection, applied in temperature sensing circuit described above, including：Voltage generation circuit generates
Default bandgap voltage reference and voltage to be detected；Adc circuit is by electricity being generated in the voltage generation circuit and to be detected
Pressure is compared processing, is converted into digital signal；Decoder into row decoding, obtains the digital signal that adc circuit generates
The temperature information of current chip to be measured.
Preferably, including：Adjust predetermined current signal；Band-gap reference is preset according to the predetermined current signal acquisition
Voltage and the voltage to be detected；The default bandgap voltage reference is modulated into positive reference voltage by positive and negative reference voltage circuit
Signal and negative reference voltage signal, the adc circuit receive modulated positive reference voltage signal and negative reference voltage signal, with
And the voltage to be detected, processing is compared, is converted into digital signal.
Preferably, the predetermined current signal, the generation of the default bandgap voltage reference and the voltage to be detected
Including：The voltage generation circuit：Including：8 metal-oxide-semiconductors, metal-oxide-semiconductor M1~metal-oxide-semiconductor M8；3 triodes, are respectively：Triode
Q1, triode Q2, triode Q3；The gate terminal of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is sequentially connected in series；Metal-oxide-semiconductor M1~the metal-oxide-semiconductor
The source terminal of M4 is connected to power supply side side by side；The drain electrode end of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 successively with the metal-oxide-semiconductor M5
The source terminal of~metal-oxide-semiconductor M8, which corresponds to, to be electrically connected；The gate terminal of the metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 is sequentially connected in series；The metal-oxide-semiconductor M5
The drain electrode end collector terminal with the triode Q1, the base terminal of the triode Q1, the base stage of the triode Q2 respectively
End is electrically connected；The emitter terminal connection common of the triode Q1；The collector terminal of the triode Q2 and the metal-oxide-semiconductor
The drain electrode end of M6 is electrically connected；The emitter terminal of the triode Q2 passes through the first resistor R1 connections common；The MOS
The drain electrode end of pipe M7 is electrically connected by second resistance R2 with the collector terminal and base terminal of the triode Q3, is exported described default
Bandgap voltage reference；The emitter terminal of the triode Q3 connects the common；The drain electrode end of the metal-oxide-semiconductor M8 passes through
The three resistance R3 connections commons, export the voltage to be detected.
Preferably, further include：Obtain the clock signal for the working status for controlling the adc circuit.
Compared with prior art, the present invention provides a kind of temperature sensing circuit and a kind of temperature checking method, at least brings
A kind of following technique effect:
1st, in the present invention, by increasing a branch on band-gap reference circuit, the analog signal of temperature can be obtained,
The temperature difference is obtained, on the one hand the operating temperature of more convenient measurement chip；On the other hand, simply more electricity of increased branch
Resistance, component is fewer, so as to reduce area.
2nd, in the present invention, simply more resistance of increased branch, component is fewer, realize it is fairly simple,
It is more cost-effective.
3rd, in the present invention, by the working status for the operational amplifier for controlling clock circuit control ADC, open at times
Open, so as to reduce power consumption, the opposing party can make the operating lifetime of component.
Brief description of the drawings
Below by a manner of clearly understandable, preferred embodiment is described with reference to the drawings, to a kind of temperature sensing circuit and
A kind of temperature checking method characteristic, technical characteristic, advantage and its implementation are further described.
Fig. 1 is a kind of structure diagram of temperature sensing circuit one embodiment of the present invention；
Fig. 2 is a kind of structure diagram of another embodiment of temperature sensing circuit of the present invention；
Fig. 3 is a kind of structure diagram of another embodiment of temperature sensing circuit of the present invention；
Fig. 4 is a kind of structure diagram of another embodiment of temperature sensing circuit of the present invention；
Fig. 5 is a kind of structure diagram of another embodiment of temperature sensing circuit of the present invention.
Embodiment
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, control is illustrated below
The embodiment of the present invention.It should be evident that drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other can also be obtained according to these attached drawings
Attached drawing, and obtain other embodiments.
To make simplified form, part related to the present invention is only schematically show in each figure, they are not represented
Its practical structures as product.In addition, so that simplified form readily appreciates, there is identical structure or function in some figures
Component, only symbolically depicts one of those, or has only marked one of those.Herein, "one" is not only represented
" only this ", can also represent the situation of " more than one ".
The present invention provides a kind of one embodiment of temperature sensing circuit, with reference to shown in figure 1；Including：Voltage generation electricity
Road, the positive and negative reference voltage circuits of ADC, adc circuit and decoder；The voltage generation circuit, for generating default band gap base
Quasi- voltage and voltage to be detected；The positive and negative reference circuits of ADC, for bandgap voltage reference to be converted to the positive benchmark of ADC
With negative reference voltage；The adc circuit, for the voltage to be detected that will be generated in the voltage generation circuit, carries out modulus and turns
Digital signal is generated after changing processing；The decoder, for by the digital signal that the adc circuit generates into row decoding,
The temperature information of the current chip to be measured of display.
Specifically, temperature sensing circuit is set in an integrated circuit, overall encapsulation, compositing chip are carried out；In this reality
The default bandgap voltage reference applied in example is：It is to be generated by band-gap reference circuit；Two same currents and area not
With triode, the difference of their base stages and emitter voltage drop presents and with absolute temperature is proportional to, and single triode, base stage and
Emitter voltage drop declines with absolute temperature.If both, which are added, will obtain approximate unrelated voltage, this circuit quilt with temperature
Referred to as band-gap reference circuit.Temperature sensing circuit is arranged on to the encapsulation that entirety is carried out on current chip to be measured, forms integrated electricity
Road module；Since default bandgap voltage reference keeps being basically unchanged, and voltage to be detected is raised with the temperature of the chip of work
And raise, so that the lifting that the electric current on each branch of temperature sensing circuit is balanced；Therefore, bandgap voltage reference is preset
The pressure difference produced between voltage to be detected, and the size of pressure difference is embodied directly in temperature change, and phase is obtained by adc circuit
The difference variation answered, by difference variation amount in digital form, inputs to each input interface of decoder；At decoder for decoding
The operating temperature of chip is obtained after reason, so as to fulfill measurement of the present embodiment to the temperature of chip.
On the basis of above example, one embodiment is additionally provided；With reference to shown in figure 2；Voltage in the present embodiment
Generative circuit：Including：8 metal-oxide-semiconductors, metal-oxide-semiconductor M1~metal-oxide-semiconductor M8；3 triodes, are respectively：Triode Q1, triode Q2, three
Pole pipe Q3；The gate terminal of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is sequentially connected in series；The source terminal of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is arranged side by side
It is connected to power supply side；The drain electrode end of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 source electrode with the metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 successively
End is corresponding to be electrically connected；The gate terminal of the metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 is sequentially connected in series；8 p-type metal-oxide-semiconductors form four branch common sources and are total to
Cascode current mirror structure is equal per branch current.Common-source common-gate current mirror compares output impedance bigger with common current mirror, so as to leak
The change of terminal voltage cannot influence mirror currents；The drain electrode end of the metal-oxide-semiconductor M5 current collection with the triode Q1 respectively
Extremely, the base terminal of the triode Q1, the base terminal of the triode Q2 are electrically connected；The emitter terminal of the triode Q1 connects
Connect common；The collector terminal of the triode Q2 is electrically connected with the drain electrode end of the metal-oxide-semiconductor M6；The hair of the triode Q2
Emitter-base bandgap grading end passes through the first resistor R1 connections common.The drain electrode end of the metal-oxide-semiconductor M7 by second resistance R2 with it is described
The collector terminal and base terminal of triode Q3 is electrically connected, and exports the default bandgap voltage reference；The transmitting of the triode Q3
Extremely connect the common；The drain electrode end of the metal-oxide-semiconductor M8 exports institute by the 3rd resistor R3 connections common
State voltage to be detected.The difference generation positive temperature coefficient voltage of both triode Q1, Q2 pressure differences, positive temperature is converted into by resistance R1
Coefficient current；Four branch currents are equal to be ensured by current mirror, and Q3's act as generation negative temperature coefficient voltage, and R2 is multiplied by electric current
(equal per branch current, electric current is positive temperature coefficient) is positive temperature coefficient, so it is unrelated to be reduced to temperature by Q3 and R2 stagnation pressures；
Second resistance R2 and triode Q3 generation bandgap voltage references, are also default bandgap voltage reference；When electric current is with temperature
Raise and influence the voltage increase at R2 both ends, since pressure drop and the temperature of triode Q3 are negatively correlated in antilinear, so as to keep pre-
If bandgap voltage reference is constant；R3 is fixed value resistance, with temperature rise, by the electric current linear increase of R3, i.e. R3 and M8 this
The voltage of generation on branch is：PTAT type voltages.Default bandgap voltage reference and the voltage that R3 is produced there are certain differential pressure, from
And corresponding temperature value can be reflected.
On the basis of above example, one embodiment is additionally provided；With reference to shown in figure 3；Further include：Positive and negative benchmark electricity
Volt circuit, the positive and negative reference voltage circuit are electrically connected with the voltage generation circuit, the adc circuit respectively, for by institute
State default bandgap voltage reference and be modulated into positive reference voltage signal and negative reference voltage signal；The positive input of operational amplifier U1
End inputs the default bandgap voltage reference；The output terminal of the operational amplifier U1 is put with the computing respectively by resistance R4
One end of the reverse input end of big device U1 and the R5 of resistance are electrically connected；The other end of the R5 of the resistance is connected by resistance R6
Connect the common.Since bandgap voltage reference needs to drive resistive load, and resistance will change the value of output voltage.Institute
To need a voltage buffer.For the buffering effect obtained, voltage buffer must use high-gain amplifier.Band-gap reference electricity
Pressure is connected with amplifier anode.Amplifier load is resitstance voltage divider.Generated by divider it is different with bandgap voltage reference and
The voltage not varied with temperature.Operational amplifier U1 in the present embodiment can pass through second order amplifier band miller collocation structures
Realized, refering to what is shown in Fig. 5, C1 and R7 compensates part for miller, prevent circuit oscillation., since the circuit is second order fortune
Put, gain is very big, forces the grid voltage of M9 and M10 equal, i.e. Vout=Vref, and Vout is amplifier output terminal electricity here
Pressure, Vref is bandgap voltage reference.So as to which the ratio between Vref+ and Vref are the sum of resistance R4, R5, R6 than the sum of upper resistance R5, R6；
The ratio between Vref- and Vref are the sum of resistance R5, R6 on resistance R6 ratios；The source terminal of metal-oxide-semiconductor M11 and the source terminal of metal-oxide-semiconductor M12 are simultaneously
Row are connected to the power supply side；The gate terminal of metal-oxide-semiconductor M11 is electrically connected with the gate terminal of metal-oxide-semiconductor M12；The grid of metal-oxide-semiconductor M11
Drain electrode end extremely also with metal-oxide-semiconductor M11 is electrically connected；The drain electrode end of metal-oxide-semiconductor M11 is corresponding in turn to the drain electrode end of metal-oxide-semiconductor M12 and is connected
In the drain electrode end of metal-oxide-semiconductor M9 and the drain electrode end of metal-oxide-semiconductor M10；The source terminal of metal-oxide-semiconductor M9 and the source terminal of the metal-oxide-semiconductor M10 are electrically connected
Connect, and be electrically connected with the drain electrode end of metal-oxide-semiconductor M13；The source terminal ground connection of the metal-oxide-semiconductor M13；The gate terminal input of metal-oxide-semiconductor M10 is pre-
If bandgap voltage reference；The drain electrode end of metal-oxide-semiconductor M12 is electrically connected with the grid of the metal-oxide-semiconductor M14.
On the basis of above example, one embodiment is additionally provided；With reference to shown in figure 4；The adc circuit includes：
The comparator of first quantity, and the resistance of the second quantity corresponding with the number of comparators of the first quantity；The institute of first quantity
The normal phase input end for stating comparator is electrically connected with the drain electrode end of the metal-oxide-semiconductor M8, receives the voltage to be detected；Second quantity
The resistance is electrically connected in series；One end of the resistance of the second quantity after series connection and the output terminal of the operational amplifier U1
It is electrically connected, receives the positive reference voltage signal；The other end of the resistance of the second quantity after series connection and the resistance
The other end of R5 is electrically connected, and receives the negative reference voltage signal；The common port of each two series resistance and the operation amplifier
The inverting input of device is electrically connected.The data message input terminal of the decoder is connected with the output terminal of the adc circuit；It is described
The data message output terminal output multi-bit binary signal of decoder.Further include：Clock circuit is controlled, with adc circuit electricity
Connection, for controlling the working status of the adc circuit；First quantity is less than the second quantity.
Specifically, in the present embodiment, the first quantity subtracts one for the second quantity, adc circuit includes for flash types ADC:Seven
A comparator and eight resistance, decoder and three registers.Wherein k-th resistance upper end and the K+1 resistance lower end, K
A comparator reverse input end is connected.First resistance lower end is connected with negative reference voltage.8th resistance upper end and positive benchmark
Voltage is connected.Seven bit comparators are exported to be connected with decoder input, and decoder exports three and is connected with three bit registers.Register
Output is temperature detection structure output.
In the present invention, by the working status for the operational amplifier for controlling clock circuit control ADC, open at times,
So as to reduce power consumption, the opposing party can make the operating lifetime of component.
In the present invention, by increasing a branch on band-gap reference circuit, the analog signal of temperature can be obtained, in fact
The existing temperature difference obtains, so as to reduce area.
Present invention also offers a kind of one embodiment of the method for temperature detection, the temperature applied to above example
Spend in detection circuit, perform shown in Fig. 1-Fig. 4；Including：The default bandgap voltage reference of voltage generation circuit generation and to be detected
Voltage；The default bandgap voltage reference generated in the voltage generation circuit and voltage to be detected are compared by adc circuit
Processing, is converted into digital signal；The digital signal that adc circuit generates into row decoding, is obtained current core to be measured by decoder
The temperature information of piece.
Preferably, including：Adjust predetermined current signal；Band-gap reference is preset according to the predetermined current signal acquisition
Voltage and the voltage to be detected；The default bandgap voltage reference is modulated into positive reference signal by positive and negative reference voltage circuit
With negative reference signal, the adc circuit receives modulated positive reference signal and negative reference signal, and the electricity to be detected
Pressure, is compared processing, is converted into digital signal.
Preferably, the predetermined current signal, the generation of the default bandgap voltage reference and the voltage to be detected
Including：The voltage generation circuit：Including：8 metal-oxide-semiconductors, metal-oxide-semiconductor M1~metal-oxide-semiconductor M8；3 triodes, are respectively：Triode
Q1, triode Q2, triode Q3；The gate terminal of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is sequentially connected in series；Metal-oxide-semiconductor M1~the metal-oxide-semiconductor
The source terminal of M4 is connected to power supply side side by side；The drain electrode end of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 successively with the metal-oxide-semiconductor M5
The source terminal of~metal-oxide-semiconductor M8, which corresponds to, to be electrically connected；The gate terminal of the metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 is sequentially connected in series；The metal-oxide-semiconductor M5
The drain electrode end collector terminal with the triode Q1, the base terminal of the triode Q1, the base stage of the triode Q2 respectively
End is electrically connected；The emitter terminal connection common of the triode Q1；The collector terminal of the triode Q2 and the metal-oxide-semiconductor
The drain electrode end of M6 is electrically connected；The emitter terminal of the triode Q2 passes through the first resistor R1 connections common.The MOS
The drain electrode end of pipe M7 is electrically connected by second resistance R2 with the collector terminal and base terminal of the triode Q3, is exported described default
Bandgap voltage reference；The emitter terminal of the triode Q3 connects the common；The drain electrode end of the metal-oxide-semiconductor M8 passes through
The three resistance R3 connections commons, export the voltage to be detected.
Preferably, further include：Obtain the clock signal for the working status for controlling the adc circuit.
On the basis of above example, one embodiment is additionally provided；Bandgap voltage reference and PTAT voltage generation electricity
Road, positive and negative reference voltage generator, flash types adc circuit and control clock circuit；Band-gap reference and PTAT voltage generative circuit
For generating the voltage unrelated with temperature and PTAT type voltages；Positive and negative reference voltage generator, act as enabling reference voltage
Drive resistive load；Clock is controlled, for being switched on and off for control module；Bandgap voltage reference is R2 second resistances close to M7
Drain electrode end, PTAT voltage is 3rd resistor anode, close to M8 drain electrode end；PTAT voltage need to be converted to number by ADC at this time
Word signal.And ADC needs positive and negative reference voltage；With reference to figure 3, positive and negative reference voltage generator is by operational amplifier and electric resistance partial pressure
Device is connected.Wherein resistance is divided into three sections, and each resistance upper end is connected with operational amplifier output terminal, the 4th resistance lower end and the 5th
Resistance upper end is connected, and the 5th resistance lower end is connected with the 6th resistance upper end.6th resistance lower end is grounded.4th resistance upper end is just
Reference voltage, the 6th resistance upper end are negative reference voltage.Bandgap voltage reference is connected with amplifier input positive terminal, amplifier input negative terminal
It is connected with the 4th resistance lower end.Operational amplifier is a second order miller type amplifier in Fig. 3.With reference to figure 5.Flash types ADC
Including：Seven comparators and eight resistance, decoder and three registers.Wherein under k-th resistance upper end and the K+1 resistance
End, k-th comparator reverse input end are connected.First resistance lower end is connected with negative reference voltage.8th resistance upper end and
Positive reference voltage is connected.Seven bit comparators are exported to be connected with decoder input, and decoder exports three and is connected with three bit registers.
Register output is temperature detection structure output.According to specific work requirements, the defeated number of comparator can be increased, it is corresponding to translate
Code device output digit carries out the change of adaptability.
In the present invention, by the working status for the operational amplifier for controlling clock circuit control ADC, open at times,
So as to reduce power consumption, the opposing party can make the operating lifetime of component.
In the present invention, by increasing a branch on band-gap reference circuit, the analog signal of temperature can be obtained, in fact
The existing temperature difference obtains, so as to reduce area.It should be noted that above-described embodiment can be freely combined as needed.Above institute
State only is the preferred embodiment of the present invention, it is noted that for those skilled in the art, is not being departed from
On the premise of the principle of the invention, some improvements and modifications can also be made, these improvements and modifications also should be regarded as the guarantor of the present invention
Protect scope.
Claims (10)
- A kind of 1. temperature sensing circuit, it is characterised in that including：Voltage generation circuit, the positive and negative reference voltage circuits of ADC, ADC electricity Road and decoder；The voltage generation circuit, for generating default bandgap voltage reference and voltage to be detected；The positive and negative reference circuits of ADC, for bandgap voltage reference to be converted to the positive benchmark of ADC and negative reference voltage；The adc circuit, for the voltage to be detected that will be generated in the voltage generation circuit, carries out life after analog-to-digital conversion process Into digital signal；The decoder, for into row decoding, the digital signal that the adc circuit generates to be shown current chip to be measured Temperature information.
- 2. temperature sensing circuit according to claim 1, it is characterised in that the voltage generation circuit：Including：8 MOS Pipe, metal-oxide-semiconductor M1~metal-oxide-semiconductor M8；3 triodes, are respectively：Triode Q1, triode Q2, triode Q3；The gate terminal of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is sequentially connected in series；The source terminal of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is connected to power supply side side by side；The drain electrode end of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is corresponding with the source terminal of the metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 successively to be electrically connected；The gate terminal of the metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 is sequentially connected in series；The drain electrode end of the metal-oxide-semiconductor M5 collector terminal with the triode Q1, the base terminal, described of the triode Q1 respectively The base terminal of triode Q2 is electrically connected；The emitter terminal connection common of the triode Q1；The collector terminal of the triode Q2 is electrically connected with the drain electrode end of the metal-oxide-semiconductor M6；The emitter terminal of the triode Q2 passes through the first resistor R1 connections common；The drain electrode end of the metal-oxide-semiconductor M7 is electrically connected by second resistance R2 with the collector terminal and base terminal of the triode Q3, Export the default bandgap voltage reference；The emitter terminal of the triode Q3 connects the common；The drain electrode end of the metal-oxide-semiconductor M8 exports the voltage to be detected by the 3rd resistor R3 connections common.
- 3. temperature sensing circuit according to claim 2, it is characterised in that further include：Positive and negative reference voltage circuit, it is described Positive and negative reference voltage circuit is electrically connected with the voltage generation circuit, the adc circuit respectively, for by the default band gap base Quasi- voltage modulated is into positive reference voltage signal and negative reference voltage signal；The normal phase input end of operational amplifier U1 inputs the default bandgap voltage reference；The output terminal of the operational amplifier U1 by resistance R4 respectively with the reverse input end of the operational amplifier U1 and One end of the R5 of resistance is electrically connected；The other end of the R5 of the resistance passes through the resistance R6 connections common.
- 4. temperature sensing circuit according to claim 3, it is characterised in that the adc circuit includes：The ratio of first quantity Compared with device, and the resistance of the second quantity corresponding with the number of comparators of the first quantity；The normal phase input end of the comparator of first quantity is electrically connected with the drain electrode end of the metal-oxide-semiconductor M8, and input is described to be checked Survey voltage；The resistance of second quantity is electrically connected in series；Put with the computing one end of the resistance of the second quantity after series connection The output terminal of big device U1 is electrically connected, and receives the positive reference voltage signal of the default bandgap voltage reference；The other end of the resistance of the second quantity after series connection is electrically connected with the other end of the R5 of the resistance, is received described pre- If the negative reference voltage signal of bandgap voltage reference；The common port of each two series resistance is electrically connected with the inverting input of the comparator；First quantity is less than the second quantity.
- 5. temperature sensing circuit according to claim 2, it is characterised in that including：The data message input terminal of the decoder is connected with the output terminal of the adc circuit；The data message of the decoder Output terminal exports multi-bit binary signal.
- 6. temperature sensing circuit according to claim 2, it is characterised in that further include：Clock circuit is controlled, is electrically connected with the adc circuit, for controlling the working status of the adc circuit.
- A kind of 7. method of temperature detection, applied in any temperature sensing circuits of claim 1-6, it is characterised in that Including：The default bandgap voltage reference of voltage generation circuit generation and voltage to be detected；Bandgap voltage reference is converted to the positive benchmark of ADC and negative reference voltage by the positive and negative reference circuits of ADC；The voltage to be detected generated in the voltage generation circuit is compared processing by adc circuit, is converted into digital signal；The digital signal that adc circuit generates into row decoding, is obtained the temperature information of current chip to be measured by decoder.
- 8. the method for temperature detection according to claim 7, it is characterised in that including：Adjust predetermined current signal；Bandgap voltage reference and the voltage to be detected are preset according to the predetermined current signal acquisition；The default bandgap voltage reference is modulated into positive and negative reference voltage circuit positive reference voltage signal and negative reference voltage is believed Number,The adc circuit receives modulated positive reference voltage signal and negative reference voltage signal, and the voltage to be detected, Processing is compared, is converted into digital signal.
- 9. the method for temperature detection according to claim 8, it is characterised in that the predetermined current signal, it is described default The generation of bandgap voltage reference and the voltage to be detected includes：The voltage generation circuit：Including：8 metal-oxide-semiconductors, metal-oxide-semiconductor M1~metal-oxide-semiconductor M8；3 triodes, are respectively：Triode Q1, triode Q2, triode Q3；The gate terminal of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is sequentially connected in series；The source terminal of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is connected to power supply side side by side；The drain electrode end of the metal-oxide-semiconductor M1~metal-oxide-semiconductor M4 is corresponding with the source terminal of the metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 successively to be electrically connected；The gate terminal of the metal-oxide-semiconductor M5~metal-oxide-semiconductor M8 is sequentially connected in series；The drain electrode end of the metal-oxide-semiconductor M5 collector terminal with the triode Q1, the base terminal, described of the triode Q1 respectively The base terminal of triode Q2 is electrically connected；The emitter terminal connection common of the triode Q1；The collector terminal of the triode Q2 is electrically connected with the drain electrode end of the metal-oxide-semiconductor M6；The emitter terminal of the triode Q2 passes through the first resistor R1 connections common；The drain electrode end of the metal-oxide-semiconductor M7 is electrically connected by second resistance R2 with the collector terminal and base terminal of the triode Q3, Export the default bandgap voltage reference；The emitter terminal of the triode Q3 connects the common；The drain electrode end of the metal-oxide-semiconductor M8 exports the voltage to be detected by the 3rd resistor R3 connections common.
- 10. the method for temperature detection according to claim 7, it is characterised in that further include：Obtain the clock signal for the working status for controlling the adc circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711266449.2A CN107976261B (en) | 2017-12-05 | 2017-12-05 | Temperature detection circuit and temperature detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711266449.2A CN107976261B (en) | 2017-12-05 | 2017-12-05 | Temperature detection circuit and temperature detection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107976261A true CN107976261A (en) | 2018-05-01 |
| CN107976261B CN107976261B (en) | 2024-05-31 |
Family
ID=62009318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711266449.2A Active CN107976261B (en) | 2017-12-05 | 2017-12-05 | Temperature detection circuit and temperature detection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107976261B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109883561A (en) * | 2018-12-20 | 2019-06-14 | 佛山臻智微芯科技有限公司 | A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated |
| CN112504501A (en) * | 2020-12-02 | 2021-03-16 | 上海摩芯半导体技术有限公司 | Multi-section temperature detection circuit and temperature detection method |
| CN113566997A (en) * | 2021-07-26 | 2021-10-29 | 深圳青铜剑技术有限公司 | Temperature sensing circuit |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090146730A1 (en) * | 2007-12-06 | 2009-06-11 | Industrial Technology Research Institue | Bandgap reference circuit |
| CN101923366A (en) * | 2009-06-17 | 2010-12-22 | 中国科学院微电子研究所 | CMOS band-gap reference voltage source with fuse calibration |
| CN104390715A (en) * | 2014-10-15 | 2015-03-04 | 南通大学 | Temperature conversion method and a low-power high-precision integrated temperature sensor |
| CN105676928A (en) * | 2014-11-18 | 2016-06-15 | 华润矽威科技（上海）有限公司 | Band gap reference circuit |
| US20170257113A1 (en) * | 2016-03-04 | 2017-09-07 | Sandisk Technologies Llc | High Accuracy Temperature Sensor |
| CN207515919U (en) * | 2017-12-05 | 2018-06-19 | 合肥恒烁半导体有限公司 | A kind of temperature sensing circuit |
-
2017
- 2017-12-05 CN CN201711266449.2A patent/CN107976261B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090146730A1 (en) * | 2007-12-06 | 2009-06-11 | Industrial Technology Research Institue | Bandgap reference circuit |
| CN101923366A (en) * | 2009-06-17 | 2010-12-22 | 中国科学院微电子研究所 | CMOS band-gap reference voltage source with fuse calibration |
| CN104390715A (en) * | 2014-10-15 | 2015-03-04 | 南通大学 | Temperature conversion method and a low-power high-precision integrated temperature sensor |
| CN105676928A (en) * | 2014-11-18 | 2016-06-15 | 华润矽威科技（上海）有限公司 | Band gap reference circuit |
| US20170257113A1 (en) * | 2016-03-04 | 2017-09-07 | Sandisk Technologies Llc | High Accuracy Temperature Sensor |
| CN207515919U (en) * | 2017-12-05 | 2018-06-19 | 合肥恒烁半导体有限公司 | A kind of temperature sensing circuit |
Non-Patent Citations (1)
| Title |
|---|
| 孙金中;冯炳军;: "一种新型CMOS电流模带隙基准源的设计", 固体电子学研究与进展, no. 04, 25 December 2010 (2010-12-25) * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109883561A (en) * | 2018-12-20 | 2019-06-14 | 佛山臻智微芯科技有限公司 | A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated |
| CN112504501A (en) * | 2020-12-02 | 2021-03-16 | 上海摩芯半导体技术有限公司 | Multi-section temperature detection circuit and temperature detection method |
| CN112504501B (en) * | 2020-12-02 | 2023-02-28 | 上海摩芯半导体技术有限公司 | Multi-section temperature detection circuit and temperature detection method |
| CN113566997A (en) * | 2021-07-26 | 2021-10-29 | 深圳青铜剑技术有限公司 | Temperature sensing circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107976261B (en) | 2024-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207515919U (en) | A kind of temperature sensing circuit | |
| CN105486912B (en) | A kind of quick over-current detection circuit of the high-precision of low pressure difference linear voltage regulator | |
| KR101031434B1 (en) | Very low power analog compensation circuit | |
| CN107976261A (en) | A kind of temperature sensing circuit and a kind of temperature checking method | |
| CN101101490A (en) | Temperature compensation device | |
| CN103995554B (en) | Voltage generator | |
| CN108958345A (en) | differential reference voltage buffer | |
| CN107624172A (en) | Reference voltage | |
| CN102788647A (en) | Temperature sensing device | |
| JPS58501299A (en) | High speed CMOS comparator circuit | |
| CN109916524B (en) | Integral digital temperature sensing circuit | |
| CN101320279B (en) | Current generator | |
| CN209841222U (en) | CMOS temperature sensor circuit | |
| CN104897943A (en) | High-sensitivity low-power current detection circuit | |
| CN102545907B (en) | Digital-analogue converter | |
| CN201035440Y (en) | Current mirror | |
| KR100219037B1 (en) | FET resistance based analogue multiplier | |
| CN111366259A (en) | Reconfigurable all-digital temperature sensor and temperature measurement method | |
| CN204697045U (en) | The data reading circuit of gas sensor and checkout gear | |
| CN107508591A (en) | A kind of rail-to-rail level displacement circuit of high linearity | |
| CN109584936B (en) | Circuit for improving drain voltage stability, memory chip and memory | |
| CN102122186B (en) | High-power negative pressure numerical control constant current module | |
| CN111736650B (en) | Integrator circuit | |
| CN118041367B (en) | Ternary decoder | |
| CN217982209U (en) | Constant-power heating circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 230001 building 11, alumni enterprise innovation park, Luyang University of science and technology, northwest, the intersection of Tianshui road and Taihe Road, Luyang District, Hefei City, Anhui Province Applicant after: Hengshuo semiconductor (Hefei) Co.,Ltd. Address before: 230041 6th floor, building 2, gongtou Xinglu science and Technology Industrial Park, Luyang District, Hefei City, Anhui Province Applicant before: ZBIT SEMICONDUCTOR Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |