CN107946436B - 一种白光led封装结构 - Google Patents
一种白光led封装结构 Download PDFInfo
- Publication number
- CN107946436B CN107946436B CN201711210772.8A CN201711210772A CN107946436B CN 107946436 B CN107946436 B CN 107946436B CN 201711210772 A CN201711210772 A CN 201711210772A CN 107946436 B CN107946436 B CN 107946436B
- Authority
- CN
- China
- Prior art keywords
- silica gel
- layer
- heat
- radiating substrate
- semispherical silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 113
- 239000000741 silica gel Substances 0.000 claims abstract description 104
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 239000000843 powder Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 46
- 230000017525 heat dissipation Effects 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000005553 drilling Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 abstract description 3
- 229960001866 silicon dioxide Drugs 0.000 description 89
- 239000010410 layer Substances 0.000 description 88
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000032683 aging Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 241001465382 Physalis alkekengi Species 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 229910052909 inorganic silicate Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 206010023126 Jaundice Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003034 coal gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711210772.8A CN107946436B (zh) | 2017-11-28 | 2017-11-28 | 一种白光led封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711210772.8A CN107946436B (zh) | 2017-11-28 | 2017-11-28 | 一种白光led封装结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107946436A CN107946436A (zh) | 2018-04-20 |
CN107946436B true CN107946436B (zh) | 2019-11-12 |
Family
ID=61949221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711210772.8A Active CN107946436B (zh) | 2017-11-28 | 2017-11-28 | 一种白光led封装结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107946436B (zh) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN203774371U (zh) * | 2014-02-27 | 2014-08-13 | 温州大学 | 一种荧光透镜应用于大功率led的封装结构 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201796891U (zh) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | 用于集成led的散热装置 |
US8764504B2 (en) * | 2011-02-25 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
CN102185093A (zh) * | 2011-04-08 | 2011-09-14 | 陕西科技大学 | 一种利用空气对流的主动散热型散热基板 |
DE102015104220A1 (de) * | 2015-03-20 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Optoelektronische Leuchtvorrichtung |
-
2017
- 2017-11-28 CN CN201711210772.8A patent/CN107946436B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN203774371U (zh) * | 2014-02-27 | 2014-08-13 | 温州大学 | 一种荧光透镜应用于大功率led的封装结构 |
Also Published As
Publication number | Publication date |
---|---|
CN107946436A (zh) | 2018-04-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI458139B (zh) | White light emitting diode module | |
CN101661987A (zh) | 一种白光led封装结构及其封装方法 | |
CN107990267A (zh) | 一种太阳能led草坪灯 | |
CN206353544U (zh) | 一种cob光源 | |
CN208256718U (zh) | 一种led的封装结构 | |
CN208142220U (zh) | 一种白光led封装结构 | |
CN107946436B (zh) | 一种白光led封装结构 | |
CN208315591U (zh) | 一种led的封装结构 | |
CN107994113A (zh) | 一种大功率蓝光led多层封装结构 | |
CN208093583U (zh) | 大功率led封装结构 | |
CN108011016B (zh) | 一种led封装结构 | |
CN108011011B (zh) | 一种led的封装结构 | |
CN207674291U (zh) | 节能大功率led工矿灯 | |
CN207880542U (zh) | 投光灯 | |
CN207705239U (zh) | 一种led封装结构 | |
CN108011006A (zh) | 一种白光led封装方法 | |
CN207831021U (zh) | 大功率led灯泡 | |
WO2015072120A1 (ja) | 発光装置、発光モジュール、照明器具及びランプ | |
CN107833946A (zh) | 一种led封装方法 | |
CN108006563A (zh) | Led草坪灯 | |
CN108019630A (zh) | 大功率led灯泡 | |
CN108011019B (zh) | 一种led封装方法 | |
CN204361095U (zh) | 一种基于远程荧光粉激发的hv-cob led光源 | |
CN107833951A (zh) | 一种led封装方法 | |
CN107968136A (zh) | Led封装方法及结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20191021 Address after: 317000 No. 5-81, Baishi Village, Datian street, Linhai City, Taizhou City, Zhejiang Province Applicant after: Liu Qiong Address before: 710065 No. 86 Leading Times Square (Block B), No. 2, Building No. 1, Unit 22, Room 12202, No. 51, High-tech Road, Xi'an High-tech Zone, Shaanxi Province Applicant before: Xi'an CREE Sheng Creative Technology Limited |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder |
Address after: AI Zhi technology building, Gulou District, Nanjing City, Jiangsu Province Patentee after: Liu Qiong Address before: 317000 no.5-81 Baishi Village, Datian street, Linhai City, Taizhou City, Zhejiang Province Patentee before: Liu Qiong |
|
CP02 | Change in the address of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211230 Address after: 528200 a, building 104, building 2, Liandong Yougu Park, No. 3, East Third District, Jiansha Road, Danzao Town, Nanhai District, Foshan City, Guangdong Province (residence declaration) Patentee after: Guangdong Anlin Electronic Technology Co.,Ltd. Address before: AI Zhi technology building, Gulou District, Nanjing City, Jiangsu Province Patentee before: Liu Qiong |
|
TR01 | Transfer of patent right |