CN107946399A - A kind of high thermal conductivity solar cell backboard and its production method - Google Patents
A kind of high thermal conductivity solar cell backboard and its production method Download PDFInfo
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- CN107946399A CN107946399A CN201711436142.2A CN201711436142A CN107946399A CN 107946399 A CN107946399 A CN 107946399A CN 201711436142 A CN201711436142 A CN 201711436142A CN 107946399 A CN107946399 A CN 107946399A
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- solar cell
- heat conduction
- thermal conductivity
- high thermal
- conduction material
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 65
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- 238000000576 coating method Methods 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 238000007747 plating Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000000654 additive Substances 0.000 claims abstract description 28
- 230000000996 additive effect Effects 0.000 claims abstract description 28
- 239000004814 polyurethane Substances 0.000 claims abstract description 26
- 229920002635 polyurethane Polymers 0.000 claims abstract description 26
- 238000001035 drying Methods 0.000 claims abstract description 24
- 239000012530 fluid Substances 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 238000007761 roller coating Methods 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims description 26
- -1 metal oxide Aluminium oxide Chemical class 0.000 claims description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims description 19
- 150000004706 metal oxides Chemical class 0.000 claims description 18
- 229920001971 elastomer Polymers 0.000 claims description 16
- 239000000806 elastomer Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
- 239000004743 Polypropylene Substances 0.000 claims description 15
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 claims description 13
- 229920006124 polyolefin elastomer Polymers 0.000 claims description 13
- 229920001155 polypropylene Polymers 0.000 claims description 13
- 239000004698 Polyethylene Substances 0.000 claims description 9
- 229920000573 polyethylene Polymers 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 150000001336 alkenes Chemical class 0.000 claims description 6
- 150000002736 metal compounds Chemical class 0.000 claims description 6
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
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- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 75
- 230000017525 heat dissipation Effects 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
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- 239000003595 mist Substances 0.000 description 2
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- 229920001721 polyimide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
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- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
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- 238000000034 method Methods 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N o-dicarboxybenzene Natural products OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
- 239000005439 thermosphere Substances 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
Abstract
The present invention provides a kind of high thermal conductivity solar cell backboard and its production method, high thermal conductivity solar cell backboard includes three-decker, and three-decker is respectively metal substrate, heat-conducting layer and film plating layer.Production method is:Metal substrate is carried out for volume by unreeling machine;Heat Conduction Material is matched, and is melt into conductive fluid;Proportioned conductive fluid is uniformly coated on to a side surface of metal base by double roller coating roller, forms heat-conducting layer;Metal substrate with coated with thermally conductive layer in 3rd step is delivered in drying chamber and carries out baking and curing;Coating Materials is matched, is melt into coating liquid;Coating liquid includes Heat Conduction Material, polyurethane and property-modifying additive;Proportioned coating liquid is uniformly coated on to another side surface of metal base by double roller coating roller, forms film plating layer;Metal substrate with coating film plating layer in 6th step is delivered in drying chamber and carries out baking and curing;Obtain backboard.
Description
Technical field
The present invention relates to solar components technical field, more particularly to a kind of high thermal conductivity solar cell backboard and its life
Production method.
Background technology
As is known in the industry, during solar cell (custom claims photovoltaic cell, the same below) work part in daylight can be subject to purple
Outer light and substantial amounts of infra-red radiation, wherein, a length ultraviolet light can only also produce a hole-electron pair, and unnecessary energy turns
Turn to thermal energy to discharge, infra-red radiation does not have the delivery efficiency of solar cell any front to help, and can only be changed into heat
Can, while distinctive coupled thermal effects can be also produced in optical-electronic transfer process, if cannot effectively radiate, battery pack will be caused
The temperature rise of part.According to the characteristic of semiconductor of crystalline silicon, temperature often raises 1 DEG C, and it is left that its optical-electronic transfer efficiency will drop 0.4%
It is right.In order to avoid shining upon the temperature for influencing battery module, and then the generating efficiency of battery module is influenced, thus to solar energy
The heat dissipation performance of battery backboard is more harsh.
The material of basic unit in the structural system of backboard used for solar batteries in prior art is usually poly- terephthaldehyde
Sour glycol ester (PET), since the thermal conductivity factors of PET in itself are relatively low, thus largely constrains backboard thermal conductivity
Improve.As shown in the above description, the internal temperature of solar cell module can both have been reduced and help by improving the thermal diffusivity of backboard
In protection solar cell module, and the optical-electronic transfer efficiency of solar cell can be improved.
Equally visible all heat dissipation effects for being intended to improve backboard used for solar batteries in disclosed Chinese patent literature
Technical information, it is typical as CN102544380B recommends have " a kind of solar cell backboard and preparation method thereof and a kind of sun
Energy battery ", it is using a metallic plate as carrier, coats organic insulator in the single or double of metallic plate, organic insulator contains
There are titanium dioxide, polyimides and heat filling, and titanium dioxide is coupling agent modified titanium dioxide.It can make the thermal conductivity factor of backboard
Reach 1.2w/mk.But shortcoming big there are water vapor transmittance and easy to aging polyimides, color inhibition and ageing-resistant performance
It is difficult to the expection for meeting industry.And for example CN104103705A is provided with " heat radiating type solar energy backboard ", it is seven-layer structure, wherein
Three layers are conducting adhesive layer, and two layers is fluorine film, and one layer is PET, and another layer is metal substrate.Although the patent application scheme is to viscous
Knot layer improves, that is, employs conducting adhesive layer and employ metallic plate, but is limited by PET low thermal conductivities, together
Sample is not enough to reach the desired heat dissipation effect of industry, while back board structure is complicated and is in length of service in use
There are the anxiety of tack coat failure." height heat dissipation solar cell backboard " that CN103681915A is introduced equally exist with it is foregoing
The shortcoming of CN104103705A.
The content of the invention
To overcome solar cell piece existing in the prior art to be subject to shadow due to backboard low thermal conductivity, its heat releasability
The problem of ringing, the present invention provides a kind of high thermal conductivity solar cell backboard and its production method.
The technical solution adopted by the present invention is:A kind of high thermal conductivity solar cell backboard, its innovative point are:Including three
Rotating fields, the three-decker are respectively metal substrate, heat-conducting layer and film plating layer, coat and lead in the side table of the metal substrate
Thermosphere, another side surface coating film plating layer of metal substrate;The coating thickness of the heat-conducting layer is 10-13nm, the film plating layer
Thickness is 12-20nm.
In some embodiments, the heat-conducting layer is coated after being melt into conductive fluid by Heat Conduction Material;The heat conduction
Material includes thermally conductive composition;The thermally conductive composition includes metal oxide, polyolefin elastomer, polyurethane and phthalic acid
Glycol ester.
In some embodiments, the metal oxide, polyolefin elastomer, polyurethane and ethylene terephthalate
Portfolio ratio be 1~2:2~3:3~5:4~5.
In some embodiments, metal oxide aluminium, zinc oxide or the titanium oxide;The polyolefin elastomer
For polyethylene and polypropylene elastomer mixture;Polyethylene and polypropylene elastomer the mixture mixed proportion is polyethylene bullet
Property body:Polypropylene elastomer=2:3.
In some embodiments, the Heat Conduction Material further includes conductive particle, and the conductive particle is added as heat conduction
Agent is added in thermally conductive composition, and the additive amount of the conductive particle is 3-5wt%.
In some embodiments, the conductive particle is silicon nitride nano particle or ceramic.
In some embodiments, the film plating layer is melt into coating liquid by Heat Conduction Material, polyurethane and property-modifying additive
After be coated;The addition of the property-modifying additive is 10-25wt%.
In some embodiments, the Heat Conduction Material is PP composite material, specifically by polypropylene and maleic acid
Acid anhydride graft polypropylene forms, its mass ratio is:30-54%:45-70%;The property-modifying additive is to include embedded Amorphous Phase
Transistion metal compound nanocrystal or sandwich construction compound including the transistion metal compound with Amorphous Phase.
Another object of the present invention additionally provides a kind of production method of high thermal conductivity solar cell backboard, its innovative point
It is:Comprise the following steps:
Step 1:Metal substrate is carried out for volume by unreeling machine;
Step 2:Heat Conduction Material is matched, and is melt into conductive fluid;The Heat Conduction Material includes metal oxide, gathers
Olefin elastomer, polyurethane and ethylene terephthalate;
Step 3:Proportioned conductive fluid is uniformly coated on to a side surface of metal base by double roller coating roller,
Form heat-conducting layer;
Step 4:Metal substrate with coated with thermally conductive layer in 3rd step is delivered in drying chamber and carries out baking and curing, is dried
Temperature is 40~60 DEG C, and drying time is 2~10 minutes;
Step 5:Coating Materials is matched, is melt into coating liquid;The coating liquid include Heat Conduction Material, polyurethane and
Property-modifying additive;
Step 6:Proportioned coating liquid is uniformly coated on to the opposite side table of metal base by double roller coating roller
Face, forms film plating layer;
Step 7:Metal substrate with coating film plating layer in 6th step is delivered in drying chamber and carries out baking and curing, is dried
Temperature is 80~100 DEG C, and drying time is 12~20 minutes;Obtain backboard.
In some embodiments, conductive particle is also added with the step 2, the conductive particle is added to heat conduction
In liquid, 1-2min is melted again, forms high-performance conductive fluid.
Compared with prior art, the beneficial effects of the invention are as follows:
(1) high thermal conductivity solar cell backboard of the invention, solar cell backboard only has three-decker, with existing skill
In art, the solar panel of 5 layers or 7 Rotating fields it is different, there is lighter structure, and eliminate and glued between layers by adhesive
The structure of knot, reduces because adhesive comes off and causes the service life of battery back-sheet to greatly reduce between layers.Use this hair
Bright solar cell backboard, it is conventional to use, at least ensure more than 30 years service lifes.Specifically, the coating thickness setting of heat-conducting layer 2
For 10-13nm, 3 thickness of film plating layer is set as 12-20nm.Generally, adding the thickness of heat-conducting layer 2, while increase film plating layer 3
Thickness, its can with heat-conducting layer 2 formed heat dissipation circulation, so as to substantially increase mutual between heat-conducting layer 2 and film plating layer 3
Coordinate so that obtained high heat conduction weathering layer perfect heat-dissipating, mechanical performance is excellent, and the thermal conductivity of solar cell backboard obtains
Greatly improve.
(2) high thermal conductivity solar cell backboard of the invention, Heat Conduction Material are melt into conductive fluid and are applied directly to metal
On substrate, reduce the use of adhesive, not only environmental protection prevents adhesive failure to come off so as to reduce making for solar panel backboard again
With the time limit, secondly, in order to increase the firmness of the coating of conductive fluid, polyurethane is added in Heat Conduction Material, polyurethane has
Stronger viscosity, at the same time, it may have certain thermal conductivity, can heat conduction but also cementation.It is exhausted that metal oxide plays heat conduction
The effect of edge filler, polyolefin elastomer and ethylene terephthalate both of which have outstanding heat conductivility.
(3) high thermal conductivity solar cell backboard of the invention, adds conductive particle, and the addition of conductive particle is limited
It is fixed, found through experiment, the metal oxide in the conductive particle and Heat Conduction Material of inorganic matter can be adhered to, heat conducting nano or
Being formed with metallic atom or ion for the surface of micro mist is bonded, and improves the compatibility between conductive particle and Heat Conduction Material and association
The same sex so that obtained high heat conduction weathering layer heat dissipation performance is outstanding.
(4) high thermal conductivity solar cell backboard of the invention, the use to Heat Conduction Material are different from leading in heat-conducting layer
The use of hot material, the Heat Conduction Material performance in film plating layer are higher than the Heat Conduction Material performance in heat-conducting layer, contribute to heat transfer,
Accelerate heat dissipation, therefore, the selection of Heat Conduction Material is extremely important, and after the present invention improves, radiating efficiency improves 40~60%.
In addition, in the present invention, the addition of property-modifying additive, utilizes property-modifying additive so that the anti-extraneous erosiveness of backboard is significantly
Improve.
Brief description of the drawings
Fig. 1 is high thermal conductivity solar cell backboard structure diagram of the present invention.
Embodiment
Below in conjunction with drawings and examples, the present invention will be described in further detail.It is it should be appreciated that described herein
Specific embodiment only to explain the present invention, is not intended to limit the present invention.
The present invention discloses a kind of high thermal conductivity solar cell backboard, as shown in Figure 1:Including three-decker, described three
Rotating fields are respectively metal substrate 1, heat-conducting layer 2 and film plating layer 3, coated with thermally conductive layer 2 in the side table of the metal substrate 1, gold
Belong to another side surface coating film plating layer 3 of substrate 1;The coating thickness of the heat-conducting layer 2 is 10-13nm, and the film plating layer 3 coats
Thickness is 12-20nm.
In the present invention, solar cell backboard only has three-decker, with the prior art, the batteries of 5 layers or 7 Rotating fields
Plate is different, has lighter structure, and eliminates the structure bonded between layers by adhesive, reduce because layer and
Adhesive comes off and causes the service life of battery back-sheet to greatly reduce between layer.It is conventional using the solar cell backboard of the present invention
Use, at least ensure more than 30 years service lifes.Specifically, the coating thickness of heat-conducting layer 2 is set as 10-13nm, 3 thickness of film plating layer is set
It is set to 12-20nm.Generally, adding the thickness of heat-conducting layer 2, while increase the thickness of film plating layer 3, it can be with heat-conducting layer 2
Heat dissipation circulation is formed, so as to substantially increase the mutual cooperation between heat-conducting layer 2 and film plating layer 3 so that obtained high heat conduction
Weathering layer perfect heat-dissipating, mechanical performance is excellent, and the thermal conductivity of solar cell backboard is greatly enhanced.
Specifically, in this embodiment of the present invention, the heat-conducting layer 2 carries out after being melt into conductive fluid by Heat Conduction Material
Coating;The Heat Conduction Material includes thermally conductive composition;The thermally conductive composition includes metal oxide, polyolefin elastomer, gathers
Urethane and ethylene terephthalate.As it is further preferred that the metal oxide, polyolefin elastomer, polyurethane and
The portfolio ratio of ethylene terephthalate is 1~2:2~3:3~5:4~5.As most preferred, the metal oxide,
The portfolio ratio of polyolefin elastomer, polyurethane and ethylene terephthalate is 1:3:4:5.In the present invention, Heat Conduction Material
Be melt into conductive fluid to be applied directly on metal substrate, reduce the use of adhesive, not only environmental protection but also prevent adhesive to fail
Come off so as to reduce the service life of solar panel backboard, secondly, in order to increase the firmness of the coating of conductive fluid, in Heat Conduction Material
In add polyurethane, polyurethane has stronger viscosity, at the same time, it may have certain thermal conductivity, heat conduction but also can bond
Effect.Metal oxide plays the role of heat-conductive insulation filling, polyolefin elastomer and ethylene terephthalate both of which
With outstanding heat conductivility.
As it is further preferred that the present invention this embodiment in, the metal oxide aluminium, zinc oxide or
Titanium oxide;The polyolefin elastomer is polyethylene and polypropylene elastomer mixture;The polyethylene and polypropylene elastomer
Mixture mixed proportion is polyethylene elastomer:Polypropylene elastomer=2:3.The Heat Conduction Material of the present invention can significantly improve scattered
Hot property and use effectively reduce solar cell module inside temperature and improve the optical-electronic transfer efficiency of solar cell,
Also help simplified structure.
As it is further preferred that in this embodiment of the present invention, the Heat Conduction Material further includes conductive particle, institute
State conductive particle as heat conduction additive to be added in thermally conductive composition, the additive amount of the conductive particle is 3-5wt%.It is preferred that
, the conductive particle is silicon nitride nano particle or ceramic.In the present invention, conductive particle is added, conductive particle
Addition is defined, and is found through experiment, and the metal oxide in the conductive particle and Heat Conduction Material of inorganic matter can carry out attached
, being formed with metallic atom or ion for the surface of heat conducting nano or micro mist be bonded, improve conductive particle and Heat Conduction Material it
Between compatibility and concertedness so that obtained high heat conduction weathering layer heat dissipation performance is outstanding.
As another inventive point of the present invention, in this embodiment of the present invention, the film plating layer 3 is by heat conduction material
Material, polyurethane and property-modifying additive are coated after being melt into coating liquid;The addition of the property-modifying additive is 10-
25wt%.In the present invention, film plating layer is made of Heat Conduction Material, is to increase the thermal diffusivity of film plating layer, added in film plating layer
Property-modifying additive, is to increase the anticorrosive or corrosion resistance of film plating layer, adds polyurethane component, be to increase plated film
The caking property of layer 3, ensures to bond on metallic substrates with regard to can completely without using binding agent.
Specifically, in this embodiment of the present invention, the Heat Conduction Material is PP composite material, specifically by gathering
Propylene and maleic anhydride inoculated polypropylene composition, its mass ratio are:30-54%:45-70%;The property-modifying additive is to include
It is embedded in the transistion metal compound nanocrystal of Amorphous Phase or including the more of the transistion metal compound with Amorphous Phase
Rotating fields compound.In the present invention, the use to Heat Conduction Material is different from the use of the Heat Conduction Material in heat-conducting layer, film plating layer
In Heat Conduction Material performance be higher than Heat Conduction Material performance in heat-conducting layer, contribute to heat transfer, accelerate heat dissipation, therefore, heat conduction
The selection of material is extremely important, and after the present invention improves, radiating efficiency improves 40~60%.In addition, in the present invention, change
Property additive addition, utilize property-modifying additive so that the anti-extraneous erosiveness of backboard greatly improves.
Another object of the present invention additionally provides the production method of above-mentioned this high thermal conductivity solar cell backboard, it is created
New point is:Comprise the following steps:
Step 1:Metal substrate 1 is carried out for volume by unreeling machine;The metal substrate 1 is such as copper coin, aluminium sheet;
Step 2:Heat Conduction Material is matched, and is melt into conductive fluid;The Heat Conduction Material includes metal oxide, gathers
Olefin elastomer, polyurethane and ethylene terephthalate;Proportioning is in metal oxide, polyolefin elastomer, polyurethane and benzene
The portfolio ratio of naphthalate is 1~2:2~3:3~5:Between 4~5;
Step 3:Proportioned melting conductive fluid is uniformly coated on to the side table of metal base by double roller coating roller
Face, forms heat-conducting layer 2;
Step 4:Metal substrate 1 with coated with thermally conductive layer 2 in 3rd step is delivered in drying chamber and carries out baking and curing, is dried
Dry temperature is 40 DEG C, and drying time is 2 minutes;2 caking property of heat-conducting layer after curing is good, service life length.
Step 5:Coating Materials is matched, is melt into coating liquid;The coating liquid include Heat Conduction Material, polyurethane and
Property-modifying additive;The addition of property-modifying additive is 10-25wt%, and the addition of Heat Conduction Material is 45-60wt%, and surplus is poly-
The percentage by weight of urethane.
Step 6:Proportioned coating liquid is uniformly coated on to the opposite side table of metal base 1 by double roller coating roller
Face, forms film plating layer 3;
Step 7:Metal substrate 1 with coating film plating layer 3 in 6th step is delivered in drying chamber and carries out baking and curing, is dried
Dry temperature is 80 DEG C, and drying time is 12 minutes;Obtain backboard.The caking property of film plating layer 3 after curing is good, service life
It is long.
Alternatively, can be following steps:
Step 1:Metal substrate 1 is carried out for volume by unreeling machine;
Step 2:Heat Conduction Material is matched, and is melt into conductive fluid;The Heat Conduction Material includes metal oxide, gathers
Olefin elastomer, polyurethane and ethylene terephthalate;As it is further preferred that continue add conductive particle, it is described to lead
Hot particle is added in conductive fluid, melts 1min again, forms high-performance conductive fluid.
Step 3:Proportioned high-performance conductive fluid is uniformly coated on to the side of metal base by double roller coating roller
Surface, forms heat-conducting layer;
Step 4:Metal substrate 1 with coated with thermally conductive layer 2 in 3rd step is delivered in drying chamber and carries out baking and curing, is dried
Dry temperature is 60 DEG C, and drying time is 10 minutes;
Step 5:Coating Materials is matched, is melt into coating liquid;The coating liquid include Heat Conduction Material, polyurethane and
Property-modifying additive;The addition of property-modifying additive is 10wt%, and the addition of Heat Conduction Material is 45wt%, and surplus is gathered for 45wt%
The percentage by weight of urethane.
Step 6:Proportioned coating liquid is uniformly coated on to the opposite side table of metal base 1 by double roller coating roller
Face, forms film plating layer 3;
Step 7:Metal substrate 1 with coating film plating layer 3 in 6th step is delivered in drying chamber and carries out baking and curing, is dried
Dry temperature is 100 DEG C, and drying time is 20 minutes;Obtain backboard.
Alternatively, can be following steps:
Step 1:Metal substrate 1 is carried out for volume by unreeling machine;
Step 2:Heat Conduction Material is matched, and is melt into conductive fluid;The Heat Conduction Material includes metal oxide, gathers
Olefin elastomer, polyurethane and ethylene terephthalate;
Step 3:Proportioned conductive fluid is uniformly coated on to a side surface of metal base 1 by double roller coating roller,
Form heat-conducting layer 2;
Step 4:Metal substrate with coated with thermally conductive layer 2 in 3rd step is delivered in drying chamber and carries out baking and curing, is dried
Temperature is 50 DEG C, and drying time is 6 minutes;
Step 5:Coating Materials is matched, is melt into coating liquid;The coating liquid include Heat Conduction Material, polyurethane and
Property-modifying additive;The addition of property-modifying additive is 25wt%, and the addition of Heat Conduction Material is 60wt%, and surplus is gathered for 15wt%
The percentage by weight of urethane.
Step 6:Proportioned coating liquid is uniformly coated on to the opposite side table of metal base 1 by double roller coating roller
Face, forms film plating layer 3;
Step 7:Metal substrate 1 with coating film plating layer 3 in 6th step is delivered in drying chamber and carries out baking and curing, is dried
Dry temperature is 90 DEG C, and drying time is 18 minutes;Obtain backboard.
The solar energy backboard of the invention described above production method production has the advantages that simple in structure, easy to use, which leads
Heating rate coating cohesive force is good, and service life meets the requirement of the solar modules service life of more than 30 years, and substantially increases too
The phototranstormation efficiency of positive energy backboard.
The preferred embodiment of the present invention has shown and described in described above, as previously described, it should be understood that the present invention is not office
Be limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations, modification and
Environment, and can be changed in the scope of the invention is set forth herein by the technology or knowledge of above-mentioned teaching or association area
It is dynamic., then all should be appended by the present invention and changes and modifications made by those skilled in the art do not depart from the spirit and scope of the present invention
In scope of the claims.
Claims (10)
- A kind of 1. high thermal conductivity solar cell backboard, it is characterised in that:Including three-decker, the three-decker is respectively gold Belong to substrate, heat-conducting layer and film plating layer, coated with thermally conductive layer in the side table of the metal substrate, another side surface of metal substrate applies Plating film layer;The coating thickness of the heat-conducting layer is 10-13nm, and the plated film layer thickness is 12-20nm.
- 2. high thermal conductivity solar cell backboard according to claim 1, it is characterised in that:The heat-conducting layer is by heat conduction material Material is coated after being melt into conductive fluid;The Heat Conduction Material includes thermally conductive composition;The thermally conductive composition includes metal oxygen Compound, polyolefin elastomer, polyurethane and ethylene terephthalate.
- 3. high thermal conductivity solar cell backboard according to claim 2, it is characterised in that:The metal oxide, gather The portfolio ratio of olefin elastomer, polyurethane and ethylene terephthalate is 1~2:2~3:3~5:4~5.
- 4. the high thermal conductivity solar cell backboard according to Claims 2 or 3, it is characterised in that:The metal oxide Aluminium oxide, zinc oxide or titanium oxide;The polyolefin elastomer is polyethylene and polypropylene elastomer mixture;The polyethylene It is polyethylene elastomer with polypropylene elastomer mixture mixed proportion:Polypropylene elastomer=2:3.
- 5. high thermal conductivity solar cell backboard according to claim 2, it is characterised in that:The Heat Conduction Material further includes Conductive particle, the conductive particle are added in thermally conductive composition as heat conduction additive, and the additive amount of the conductive particle is 3-5wt%.
- 6. high thermal conductivity solar cell backboard according to claim 5, it is characterised in that:The conductive particle is nitridation Silicon nano or ceramic.
- 7. high thermal conductivity solar cell backboard according to claim 1, it is characterised in that:The film plating layer is by heat conduction material Material, polyurethane and property-modifying additive are coated after being melt into coating liquid;The addition of the property-modifying additive is 10- 25wt%.
- 8. high thermal conductivity solar cell backboard according to claim 7, it is characterised in that:The Heat Conduction Material is poly- third Alkene composite material, is specifically made of polypropylene and maleic anhydride inoculated polypropylene, its mass ratio is:30-54%:45-70%; The property-modifying additive is to include the transistion metal compound nanocrystal of embedded Amorphous Phase or including with Amorphous Phase Transistion metal compound sandwich construction compound.
- A kind of 9. production method of high thermal conductivity solar cell backboard described in claim 1, it is characterised in that:Including following step Suddenly:Step 1:Metal substrate is carried out for volume by unreeling machine;Step 2:Heat Conduction Material is matched, and is melt into conductive fluid;The Heat Conduction Material includes metal oxide, polyolefin Elastomer, polyurethane and ethylene terephthalate;Step 3:Proportioned conductive fluid is uniformly coated on to a side surface of metal base by double roller coating roller, is formed Heat-conducting layer;Step 4:Metal substrate with coated with thermally conductive layer in 3rd step is delivered in drying chamber and carries out baking and curing, drying temperature For 40~60 DEG C, drying time is 2~10 minutes;Step 5:Coating Materials is matched, is melt into coating liquid;The coating liquid includes Heat Conduction Material, polyurethane and modification Additive;Step 6:Proportioned coating liquid is uniformly coated on to another side surface of metal base, shape by double roller coating roller Into film plating layer;Step 7:Metal substrate with coating film plating layer in 6th step is delivered in drying chamber and carries out baking and curing, drying temperature For 80~100 DEG C, drying time is 12~20 minutes;Obtain backboard.
- 10. the production method of high thermal conductivity solar cell backboard according to claim 9, it is characterised in that:The step Conductive particle is also added with rapid two, the conductive particle is added in conductive fluid, melts 1-2min again, is formed high-performance and is led Hydrothermal solution.
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CN105140327A (en) * | 2015-06-30 | 2015-12-09 | 杭州福斯特光伏材料股份有限公司 | Heat radiation backboard for photovoltaic assembly |
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Application publication date: 20180420 |