CN107863878A - A kind of switch power source driving circuit based on PWM controls - Google Patents
A kind of switch power source driving circuit based on PWM controls Download PDFInfo
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- CN107863878A CN107863878A CN201710954815.7A CN201710954815A CN107863878A CN 107863878 A CN107863878 A CN 107863878A CN 201710954815 A CN201710954815 A CN 201710954815A CN 107863878 A CN107863878 A CN 107863878A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0051—Diode reverse recovery losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Power Engineering (AREA)
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Abstract
The invention belongs to Switching Power Supply control technology field,A kind of more particularly to switch power source driving circuit for being used to reduce metal-oxide-semiconductor body diode losses in switching power circuit,Switching power circuit comprises at least upper metal-oxide-semiconductor,Lower metal-oxide-semiconductor and inductance,Drive circuit includes upper metal-oxide-semiconductor driving power,Lower metal-oxide-semiconductor driving power,Sequential control circuit,Upper metal-oxide-semiconductor drive circuit and lower metal-oxide-semiconductor drive circuit,Upper metal-oxide-semiconductor drive circuit and/or lower metal-oxide-semiconductor drive circuit are made up of four transistors and a switch,It effectively prevent the conducting of metal-oxide-semiconductor body diode in the conducting of metal-oxide-semiconductor body diode under lower metal-oxide-semiconductor is turned off in the transfer process turned on to upper metal-oxide-semiconductor and/or in the transfer process of upper metal-oxide-semiconductor shut-off to lower metal-oxide-semiconductor conducting,Or only sub-fraction electric current flows through body diode,So as to effectively reduce reverse recovery loss caused by body diode.
Description
Technical field
Switching Power Supply control technology field of the present invention, more particularly to a kind of Switching Power Supply for being used for reduction and being controlled based on PWM
The switch power source driving circuit of metal-oxide-semiconductor body diode losses in circuit.
Background technology
As shown in figure 1, the basic building unit of the Switching Power Supply for existing PWM controls, defines V1>V2, it is connected with V1
MOSFET be referred to as HS_FET, the MOSFET being connected with V2 is referred to as LS_FET.Input (VIN) when system, output (VOUT) and
Ground (GND) may be constructed different types of Switching Power Supply when being separately dispensed into V1, V2, V3, as shown in Figures 2 and 3, respectively drop
Die mould converter and boost converter, it is as shown in Figure 4 and Figure 5 two kinds of reversely buck-boost type converter.
As shown in fig. 6, for the basic building unit of the Switching Power Supply with drive circuit, upper tube HS_FET and down tube LS_
FET conducting is substantially complementary state, i.e., when upper tube HS_FET is turned on, down tube LS_FET shut-offs, when down tube LS_FET is led
When logical, upper tube HS_FET shut-offs.During practical application, in order to prevent top tube and down tube from simultaneously turning on, upper tube shut-off after and down tube
The dead band period 1 (being designated as DT1) can be added before conducting, after down tube shut-off and the dead band period 2 can be added before upper tube conducting and (be designated as
DT2), its sequential control figure by the sequential control circuit shown in Fig. 6 as shown in fig. 7, wherein produced lower tube drive circuit LS_
Input timing control in DRIVER control signal PWM_LS and upper tube drive circuit HS_DRIVER control signal PWM_HS, Fig. 6
The pwm signal of circuit processed is produced by system control loop.
When the inductive current of outflow VSW nodes is timing, the direction of inductive current is as shown in fig. 6, in dead band period DT2
When, body diode (Body Diode) D1 of down tube can be turned on, during body diode is from off state to first conducting state,
D1 can start stored charge, and its electricity is commonly referred to as QRR, and after upper tube turns on, body diode will not immediately enter shut-off shape
State, body diode need to be found electric current to move away this Partial charge, when upper tube turns on, this part reverse current be by
VIN is provided by upper tube HS_FET, and the reverse current of this part can cause system loss, the calculation formula such as following formula of loss：
P_QRR=QRR*VIN*FS
In formula, VIN represents system input voltage, and FS represents the switching frequency of pwm control signal.Similarly, when outflow VSW sections
When the inductive current of point is bears, upper tube is conducting in the transfer process of down tube conducting (DT1 periods), the upper tube LS_FET pole of body two
Pipe can turn on and bring bigger reverse recovery loss.
The loss that either upper tube HS_FET body diodes are brought, or the loss that down tube LS_FET body diodes are brought,
Initial stage is turned in body diode, QRR accumulates with the increase of ON time, so from formula (1), if reduced dead as far as possible
Area period DT2, it is possible to effectively reduce QRR size, so as to reduce the loss of system, effectively improve the conversion efficiency of system.
In addition, if the conducting of body diode can be avoided completely, it is possible to avoid being lost caused by QRR completely.
The content of the invention
For the problems of the prior art, the present invention provide it is a kind of it is based on PWM controls, can effectively reduce body diode
The switch power source driving circuit of caused reverse recovery loss.
To realize above technical purpose, the first technical scheme of the invention is as follows, and the technical scheme is opened suitable for reduction
It is lost in powered-down source caused by lower metal-oxide-semiconductor body diode.
A kind of switch power source driving circuit based on PWM controls, switching power circuit comprise at least upper metal-oxide-semiconductor, lower metal-oxide-semiconductor
And inductance, the grid of the upper metal-oxide-semiconductor are used for the drive signal for accessing metal-oxide-semiconductor, the grid of the lower metal-oxide-semiconductor is used under accessing
Metal-oxide-semiconductor drive signal, the source electrode of the upper metal-oxide-semiconductor, the drain electrode of lower metal-oxide-semiconductor are connected with one end of inductance, the source of the lower metal-oxide-semiconductor
The signal input part and system of earth terminal of the pole as system, the drain electrode of upper metal-oxide-semiconductor and the other end of inductance respectively as system
Signal output part and both are interchangeable, or earth terminal of the other end as system of the inductance, the drain electrode of upper metal-oxide-semiconductor with
The source electrode of lower metal-oxide-semiconductor is respectively as the signal input part of system and the signal output part of system and both are interchangeable；
Drive circuit includes upper metal-oxide-semiconductor driving power, lower metal-oxide-semiconductor driving power, sequential control circuit, the driving of upper metal-oxide-semiconductor
Circuit and lower metal-oxide-semiconductor drive circuit；
The upper metal-oxide-semiconductor driving power is upper metal-oxide-semiconductor drive circuitry；
The lower metal-oxide-semiconductor driving power is lower metal-oxide-semiconductor drive circuitry；
The sequential control circuit is used for reception system pwm control signal, generation system timing control signal, and by PWM
Control signal and timing control signal synthesize, metal-oxide-semiconductor pwm control signal and lower metal-oxide-semiconductor pwm control signal in generation, when described
Sequence control circuit includes signal input part, the first signal output part, secondary signal output end, the 3rd signal output part, the 4th letter
Number output end and the 5th signal output part；
The upper metal-oxide-semiconductor drive circuit be used for receive sequential control circuit output upper metal-oxide-semiconductor pwm control signal and by its
Metal-oxide-semiconductor drive signal is converted into, the upper metal-oxide-semiconductor drive circuit includes positive source input, positive source input, electricity
Source negative input, signal input part and signal output part；
The lower metal-oxide-semiconductor drive circuit be used for receive sequential control circuit output lower metal-oxide-semiconductor pwm control signal and by its
Lower metal-oxide-semiconductor drive signal is converted into, the lower metal-oxide-semiconductor drive circuit includes transistor Q1, transistor Q2, transistor Q3, crystal
Pipe Q4 and switch S1, the Q2 and lower metal-oxide-semiconductor use the same type power semiconductor devices that same process makes, the leakage of the Q1
Pole is connected with Q3 drain electrode and is used as positive source input, and source electrode is extremely connected with Q2 drain electrode and S1 input respectively and conduct
Signal output part, grid is as the first signal input part, the grid of the Q2 output stage with S1, Q3 source electrode and Q4 respectively
Drain electrode is connected, and source electrode is connected with Q4 source electrode and conduct power cathode input, the control pole of the S1 are defeated as secondary signal
Enter end, the grid of the Q3 is as the 3rd signal input part, and the grid of the Q4 is as the 4th signal input part；
The positive pole of the upper metal-oxide-semiconductor driving power is connected with the positive source input of upper metal-oxide-semiconductor drive circuit, negative pole point
It is not connected with the power cathode input of upper metal-oxide-semiconductor drive circuit and the source electrode of upper metal-oxide-semiconductor；
The positive pole of the lower metal-oxide-semiconductor driving power is connected with the positive source input of lower metal-oxide-semiconductor drive circuit, negative pole point
It is not connected with the power cathode input of lower metal-oxide-semiconductor drive circuit and the source electrode of lower metal-oxide-semiconductor；
The signal input part of the sequential control circuit is used to input pwm control signal, the first signal output part and upper MOS
The signal input part of tube drive circuit is connected, secondary signal output end, the 3rd signal output part, the 4th signal output part, the 5th
Signal output part the first signal input part, secondary signal input, the 3rd signal input part with lower metal-oxide-semiconductor drive circuit respectively
It is connected with the 4th signal input part；
The signal output part of the upper metal-oxide-semiconductor drive circuit is connected with the grid of upper metal-oxide-semiconductor；
The signal output part of the lower metal-oxide-semiconductor drive circuit is connected with the grid of lower metal-oxide-semiconductor.
The operation principle of the technical scheme is：It is quick to close in the transfer process of lower metal-oxide-semiconductor shut-off to upper metal-oxide-semiconductor conducting
After disconnected Q1, but do not open Q2 quickly at once.Now, by closure switch S1, Q2 can regard a diode- as
Connected MOSFET, its characteristic are that the voltage between drain electrode and source electrode is limited on Q2 threshold voltage a bit substantially.
Q2 and lower metal-oxide-semiconductor are realized due to the same type power semiconductor devices made of same process, then after S1 openings, under
Metal-oxide-semiconductor will be in a weaker conducting state.By the size for selecting Q2, it is ensured that all or most of output electricity
MOSFET parts in the lower metal-oxide-semiconductor of stream circulation, so as to avoid body diode D1 from turning on, or only sub-fraction electric current flows through body two
Pole pipe.Can rapidly turn off lower metal-oxide-semiconductor from this state simultaneously, and time for needing of turn off process by temperature, technique,
The influence of drive circuit supply voltage can be much smaller.
From the above, it can be seen that the technical scheme possesses advantages below：By lower metal-oxide-semiconductor drive circuit, effectively keep away
Exempt from the conducting of lower metal-oxide-semiconductor body diode, or only sub-fraction electric current flows through body diode, so as to effectively reduce body two
Reverse recovery loss caused by pole pipe.
To realize above technical purpose, second of technical scheme of the invention is as follows, and the technical scheme is opened suitable for reduction
It is lost in powered-down source caused by upper metal-oxide-semiconductor body diode.
A kind of switch power source driving circuit based on PWM controls, the Switching Power Supply comprise at least upper metal-oxide-semiconductor, lower metal-oxide-semiconductor
And inductance, the grid of the upper metal-oxide-semiconductor are used for the drive signal for accessing metal-oxide-semiconductor, the grid of the lower metal-oxide-semiconductor is used under accessing
Metal-oxide-semiconductor drive signal, the source electrode of the upper metal-oxide-semiconductor, the drain electrode of lower metal-oxide-semiconductor are connected with one end of inductance, the source of the lower metal-oxide-semiconductor
The signal input part and system of earth terminal of the pole as system, the drain electrode of upper metal-oxide-semiconductor and the other end of inductance respectively as system
Signal output part and both are interchangeable, or earth terminal of the other end as system of the inductance, the drain electrode of upper metal-oxide-semiconductor with
The source electrode of lower metal-oxide-semiconductor is respectively as the signal input part of system and the signal output part of system and both are interchangeable；
The drive circuit includes upper metal-oxide-semiconductor driving power, lower metal-oxide-semiconductor driving power, sequential control circuit, upper metal-oxide-semiconductor
Drive circuit and lower metal-oxide-semiconductor drive circuit；
The upper metal-oxide-semiconductor driving power is upper metal-oxide-semiconductor drive circuitry；
The lower metal-oxide-semiconductor driving power is lower metal-oxide-semiconductor drive circuitry；
The sequential control circuit is used for reception system pwm control signal, generation system timing control signal, and by PWM
Control signal and timing control signal synthesize, metal-oxide-semiconductor pwm control signal and lower metal-oxide-semiconductor pwm control signal in generation, when described
Sequence control circuit includes signal input part, the first signal output part, secondary signal output end, the 3rd signal output part and the 4th
Signal output part and the 5th signal output part；
The upper metal-oxide-semiconductor drive circuit be used for receive sequential control circuit output upper metal-oxide-semiconductor pwm control signal and by its
Metal-oxide-semiconductor drive signal is converted into, the upper metal-oxide-semiconductor drive circuit includes transistor Q5, transistor Q6, transistor Q7, crystal
Pipe Q8 and switch S2, the Q6 and upper metal-oxide-semiconductor use the same type power semiconductor devices that same process makes, the leakage of the Q5
Pole is connected with Q7 drain electrode and is used as positive source input, and source electrode is extremely connected with Q6 drain electrode and S2 input respectively and conduct
Signal output part, grid is as the first signal input part, the grid of the Q6 output stage with S2, Q7 source electrode and Q8 respectively
Drain electrode is connected, and source electrode is connected with Q8 source electrode and conduct power cathode input, the control pole of the S2 are defeated as secondary signal
Enter end, the grid of the Q7 is as the 3rd signal input part, and the grid of the Q8 is as the 4th signal input part；
The lower metal-oxide-semiconductor drive circuit be used for receive sequential control circuit output lower metal-oxide-semiconductor pwm control signal and by its
Lower metal-oxide-semiconductor drive signal is converted into, the lower metal-oxide-semiconductor drive circuit includes positive source input, power cathode input, letter
Number input and signal output part；
The positive pole of the upper metal-oxide-semiconductor driving power is connected with the positive source input of upper metal-oxide-semiconductor drive circuit, negative pole point
It is not connected with the power cathode input of upper metal-oxide-semiconductor drive circuit and the source electrode of upper metal-oxide-semiconductor；
The positive pole of the lower metal-oxide-semiconductor driving power is connected with the positive source input of lower metal-oxide-semiconductor drive circuit, negative pole point
It is not connected with the power cathode input of lower metal-oxide-semiconductor drive circuit and the source electrode of lower metal-oxide-semiconductor；
The signal input part of the sequential control circuit is used to input pwm control signal, the first signal output part and lower MOS
The signal input part of tube drive circuit is connected, secondary signal output end, the 3rd signal output part, the 4th signal output part, the 5th
Signal input part the first signal input part, secondary signal input, the 3rd signal input part with upper metal-oxide-semiconductor drive circuit respectively
It is connected with the 4th signal input part；
The signal output part of the upper metal-oxide-semiconductor drive circuit is connected with the grid of upper metal-oxide-semiconductor；
The signal output part of the lower metal-oxide-semiconductor drive circuit is connected with the grid of lower metal-oxide-semiconductor.
The operation principle of the technical scheme is：During upper metal-oxide-semiconductor shut-off to lower metal-oxide-semiconductor conducting, Q5 is rapidly switched off
Afterwards, Q6 but is not opened quickly at once.Now, by closure switch S2, Q6 can regard a diode-connected as
MOSFET, its characteristic are that the voltage between drain electrode and source electrode is limited on Q6 threshold voltage a bit substantially.Due to identical
The same type semiconductor devices that technique makes realizes Q6 and upper metal-oxide-semiconductor, then after S2 openings, upper metal-oxide-semiconductor will be in one
Individual weaker conducting state.By the size for selecting Q6, it is ensured that all or most of upper metal-oxide-semiconductor of output current circulation
In MOSFET parts, so as to avoid body diode D2 from turning on, or only sub-fraction electric current flows through body diode.While from
This state can rapidly turn off metal-oxide-semiconductor, and the time that turn off process needs is by temperature, technique, drive circuit electricity
The influence of source voltage can be much smaller.
From the above, it can be seen that the technical scheme possesses advantages below：By upper metal-oxide-semiconductor drive circuit, effectively keep away
Exempt from the conducting of upper metal-oxide-semiconductor body diode, or only sub-fraction electric current flows through body diode, so as to effectively reduce body two
Reverse recovery loss caused by pole pipe.
To realize above technical purpose, the third technical scheme of the invention is as follows, and the technical scheme is applied to subtract simultaneously
It is lost in small Switching Power Supply caused by upper metal-oxide-semiconductor body diode and lower metal-oxide-semiconductor body diode.
A kind of switch power source driving circuit based on PWM controls, switching power circuit comprise at least upper metal-oxide-semiconductor, lower metal-oxide-semiconductor
And inductance, the grid of the upper metal-oxide-semiconductor are used for the drive signal for accessing metal-oxide-semiconductor, the grid of the lower metal-oxide-semiconductor is used under accessing
Metal-oxide-semiconductor drive signal, the source electrode of the upper metal-oxide-semiconductor, the drain electrode of lower metal-oxide-semiconductor are connected with one end of inductance, the source of the lower metal-oxide-semiconductor
The signal input part and system of earth terminal of the pole as system, the drain electrode of upper metal-oxide-semiconductor and the other end of inductance respectively as system
Signal output part and both are interchangeable, or earth terminal of the other end as system of the inductance, the drain electrode of upper metal-oxide-semiconductor with
The source electrode of lower metal-oxide-semiconductor is respectively as the signal input part of system and the signal output part of system and both are interchangeable；
Drive circuit includes upper metal-oxide-semiconductor driving power, lower metal-oxide-semiconductor driving power, sequential control circuit, the driving of upper metal-oxide-semiconductor
Circuit and lower metal-oxide-semiconductor drive circuit；
The upper metal-oxide-semiconductor driving power is upper metal-oxide-semiconductor drive circuitry；
The lower metal-oxide-semiconductor driving power is lower metal-oxide-semiconductor drive circuitry；
The sequential control circuit is used for reception system pwm control signal, generation system timing control signal, and by PWM
Control signal and timing control signal synthesize, metal-oxide-semiconductor pwm control signal and lower metal-oxide-semiconductor pwm control signal in generation, when described
Sequence control circuit includes signal input part, the first signal output part, secondary signal output end, the 3rd signal output part, the 4th letter
Number output end, the 5th signal output part, the 6th signal output part, the 7th signal output part and the 8th signal output part；
The lower metal-oxide-semiconductor drive circuit is used for the lower metal-oxide-semiconductor driving control signal for receiving sequential control circuit output and will
It is converted into lower metal-oxide-semiconductor drive signal, and the lower metal-oxide-semiconductor drive circuit includes transistor Q1, transistor Q2, transistor Q3, crystalline substance
Body pipe Q4 and switch S1, the Q2 and lower metal-oxide-semiconductor use the same type power semiconductor devices that same process makes, the Q1's
Drain electrode is connected with Q3 drain electrode and is used as positive source input, and source electrode is extremely connected and made with Q2 drain electrode and S1 input respectively
For signal output part, grid is as the first signal input part, the grid of the Q2 output stage with S1, Q3 respectively source electrode and Q4
Drain electrode be connected, source electrode is connected with Q4 source electrode and is used as power cathode input, and the control pole of the S1 is as secondary signal
Input, the grid of the Q3 is as the 3rd signal input part, and the grid of the Q4 is as the 4th signal input part；
The upper metal-oxide-semiconductor drive circuit be used for receive sequential control circuit output upper metal-oxide-semiconductor pwm control signal and by its
Metal-oxide-semiconductor drive signal is converted into, the upper metal-oxide-semiconductor drive circuit includes transistor Q5, transistor Q6, transistor Q7, crystal
Pipe Q8 and switch S2, the Q6 and upper metal-oxide-semiconductor use the same type power semiconductor devices that same process makes, the leakage of the Q5
Pole is connected with Q7 drain electrode and is used as positive source input, and source electrode is extremely connected with Q6 drain electrode and S2 input respectively and conduct
Signal output part, grid is as the first signal input part, the grid of the Q6 output stage with S2, Q7 source electrode and Q8 respectively
Drain electrode is connected, and source electrode is connected with Q8 source electrode and conduct power cathode input, the control pole of the S2 are defeated as secondary signal
Enter end, the grid of the Q7 is as the 3rd signal input part, and the grid of the Q8 is as the 4th signal input part；
Positive source input of the positive pole of the upper metal-oxide-semiconductor driving power respectively with upper metal-oxide-semiconductor drive circuit is connected, and bears
Pole is connected with the power cathode input of upper metal-oxide-semiconductor drive circuit and the source electrode of upper metal-oxide-semiconductor respectively；
The positive pole of the lower metal-oxide-semiconductor driving power is connected with the positive source input of lower metal-oxide-semiconductor drive circuit, negative pole point
It is not connected with the power cathode input of lower metal-oxide-semiconductor drive circuit and the source electrode of lower metal-oxide-semiconductor；
The signal input part of the sequential control circuit is used to input pwm control signal, the first signal output part, the second letter
Number output end, the 3rd signal output part, the 4th signal output part respectively the first signal input part with lower metal-oxide-semiconductor drive circuit,
Secondary signal input, the 3rd signal input part, the 4th signal input part are connected；5th signal output part, the 6th signal output
The first signal input part with upper metal-oxide-semiconductor drive circuit, second are believed respectively for end, the 7th signal output part, the 8th signal output part
Number input, the 3rd signal input part, the 4th signal input part are connected；
The signal output part of the upper metal-oxide-semiconductor drive circuit is connected with the grid of upper metal-oxide-semiconductor；
The signal output part of the lower metal-oxide-semiconductor drive circuit is connected with the grid of lower metal-oxide-semiconductor.
The operation principle of the technical scheme is：
(1) in the shut-off of lower metal-oxide-semiconductor into upper metal-oxide-semiconductor turn on process, after rapidly switching off Q1, but do not open quickly at once
Q2.Now, by closure switch S1, Q2 can regard a diode-connectedMOSFET as, and its characteristic is drain electrode and source
Voltage between pole is limited on Q2 threshold voltage a bit substantially.Due to the same type semiconductor device made of same process
Part realizes Q2 and lower metal-oxide-semiconductor, then after S1 openings, lower metal-oxide-semiconductor will be in a weaker conducting state.Pass through choosing
Select Q2 size, it is ensured that the MOSFET parts in all or most of lower metal-oxide-semiconductor of output current circulation, so as to avoid body
Diode D1 is turned on, or only sub-fraction electric current flows through body diode.Can rapidly it be turned off from this state simultaneously
Lower metal-oxide-semiconductor, and the time that turn off process needs, by temperature, technique, the influence of drive circuit supply voltage can be much smaller.
(2) in the shut-off of upper metal-oxide-semiconductor into lower metal-oxide-semiconductor turn on process, after rapidly switching off Q5, but do not open quickly at once
Q6.Now, by closure switch S2, Q6 can regard a diode-connectedMOSFET as, and its characteristic is drain electrode and source
Voltage between pole is limited on Q6 threshold voltage a bit substantially.Due to the same type semiconductor device made of same process
Part realizes Q6 and upper metal-oxide-semiconductor, then after S2 openings, upper metal-oxide-semiconductor will be in a weaker conducting state.Pass through choosing
Select Q6 size, it is ensured that the MOSFET parts in all or most of upper metal-oxide-semiconductor of output current circulation, so as to avoid body
Diode D2 is turned on, or only sub-fraction electric current flows through body diode.Can rapidly it be turned off from this state simultaneously
Upper metal-oxide-semiconductor, and the time that turn off process needs, by temperature, technique, the influence of drive circuit supply voltage can be much smaller.
From the above, it can be seen that the technical scheme possesses advantages below：Pass through upper metal-oxide-semiconductor drive circuit and lower MOS
Tube drive circuit effectively prevent the conducting of upper and lower metal-oxide-semiconductor body diode, or only sub-fraction electric current flows through the pole of body two
Pipe, so as to effectively reduce reverse recovery loss caused by body diode.
Brief description of the drawings
Fig. 1 is the basic structure schematic diagram of general switching power circuit；
Fig. 2 is the basic structure schematic diagram of buck convertor；
Fig. 3 is the basic structure schematic diagram of boost converter；
Fig. 4 is the basic structure schematic diagram of reverse buck-boost type converter；
Fig. 5 is the basic structure schematic diagram of reverse buck-boost type converter；
Fig. 6 is the basic structure schematic diagram of the existing Switching Power Supply with drive circuit；
Fig. 7 is Fig. 6 signal waveform schematic diagram；
Fig. 8 is the structural representation of the embodiment of the present invention 1；
Fig. 9 is the signal waveform schematic diagram of the embodiment of the present invention 1；
Figure 10 is the structural representation of the embodiment of the present invention 2；
Figure 11 is the signal waveform schematic diagram of the embodiment of the present invention 2；
Figure 12 is the structural representation of the embodiment of the present invention 3；
Figure 13 is the signal waveform schematic diagram of the embodiment of the present invention 3.
Embodiment
With reference to Fig. 8 to Fig. 9, embodiments of the invention 1 are described in detail, but any limit is not done to the claim of the present invention
It is fixed.
In the basic building unit of switching power circuit as shown in Figure 6, when the inductive current of outflow VSW nodes is just
When, LS_FET is conducting in the transfer process of LS_FET conductings (DT2), and LS_FET body diode can be turned on and brought bigger
Reverse recovery loss, therefore LS_FET needs a new drive circuit, to reduce caused by HS_FET body diodes reversely
Recover loss.
As shown in figure 8, a kind of switch power source driving circuit based on PWM controls, switching power circuit comprise at least upper MOS
Pipe HS_FET, lower metal-oxide-semiconductor LS_FET and inductance L1, HS_FET grid are used for the drive signal for accessing HS_FET, LS_FET's
Grid is used to access LS_FET drive signals, and the HS_FET drain electrode of source electrode, LS_FET is connected with L1 one end, LS_FET source
Earth terminal of the pole as system, HS_FET drain electrode and the L1 other end are respectively as the signal input part of system and the letter of system
Number output end and both are interchangeable, or L1 earth terminal of the other end as system, HS_FET drain electrode and LS_FET source
Pole is respectively as the signal input part of system and the signal output part of system and both are interchangeable；
Drive circuit include upper metal-oxide-semiconductor driving power VCC_HS, lower metal-oxide-semiconductor driving power VCC_LS, sequential control circuit,
Upper metal-oxide-semiconductor drive circuit HS_DRIVER and lower metal-oxide-semiconductor drive circuit LS_DRIVER；
VCC_HS is upper metal-oxide-semiconductor drive circuitry；
VCC_LS is lower metal-oxide-semiconductor drive circuitry；
Sequential control circuit is used for reception system pwm control signal, generation system timing control signal, and PWM is controlled
Signal and timing control signal synthesize, metal-oxide-semiconductor pwm control signal and lower metal-oxide-semiconductor pwm control signal in generation, SECO electricity
Road includes signal input part, the first signal output part, secondary signal output end, the 3rd signal output part, the 4th signal output part
With the 5th signal output part；
Upper metal-oxide-semiconductor drive circuit is used to receive the upper metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted
For upper metal-oxide-semiconductor drive signal, the upper metal-oxide-semiconductor drive circuit includes positive source input, positive source input, power supply and born
Pole input, signal input part and signal output part；
Lower metal-oxide-semiconductor drive circuit is used to receive the lower metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted
For lower metal-oxide-semiconductor drive signal, lower metal-oxide-semiconductor drive circuit includes transistor Q1, transistor Q2, transistor Q3, transistor Q4 and opened
The same type power semiconductor devices that S1, Q2 and LS_FET use same process to make is closed, Q1 drain electrode is connected with Q3 drain electrode
And positive source input is used as, source electrode is extremely connected with Q2 drain electrode and S1 input and is used as signal output part, grid respectively
As the first signal input part, the drain electrode of Q2 the grid output stage with S1, Q3 source electrode and Q4 respectively is connected, source electrode and Q4's
Source electrode is connected and is used as power cathode input, and S1 control pole is as secondary signal input, and Q3 grid is as the 3rd letter
Number input, Q4 grid is as the 4th signal input part；
Upper metal-oxide-semiconductor driving power VCC_HS positive pole is connected with the positive source input of upper metal-oxide-semiconductor drive circuit, negative pole
It is connected respectively with the power cathode input of upper metal-oxide-semiconductor drive circuit and the source electrode of upper metal-oxide-semiconductor；
Lower metal-oxide-semiconductor driving power VCC_LS positive pole is connected with the positive source input of lower metal-oxide-semiconductor drive circuit, negative pole
It is connected respectively with the power cathode input of lower metal-oxide-semiconductor drive circuit and the source electrode of lower metal-oxide-semiconductor；
The signal input part of sequential control circuit is used to input pwm control signal, and the first signal output part drives with upper metal-oxide-semiconductor
The signal input part of dynamic circuit is connected, secondary signal output end, the 3rd signal output part, the 4th signal output part, the 5th signal
Output end the first signal input part with lower metal-oxide-semiconductor drive circuit, secondary signal input, the 3rd signal input part, respectively
Four signal input parts are connected；
The signal output part of upper metal-oxide-semiconductor drive circuit is connected with HS_FET grid；
The signal output part of lower metal-oxide-semiconductor drive circuit is connected with LS_FET grid.
The control principle of the technical scheme is：It is quick to close in the transfer process of lower metal-oxide-semiconductor shut-off to upper metal-oxide-semiconductor conducting
Disconnected Q1, but do not open Q2 quickly at once.Now, by closure switch S1, Q2 can regard a diode-connected as
MOSFET, its characteristic are that the voltage between drain electrode and source electrode is limited on Q2 threshold voltage a bit substantially.Due to identical
The same type power semiconductor devices that technique makes realizes Q2 and lower metal-oxide-semiconductor, then after S1 openings, LS_FET will be in
One weaker conducting state.By the size for selecting Q2, it is ensured that all or most of output current circulation LS_
MOSFET parts in FET, so as to avoid body diode D1 from turning on, or only sub-fraction electric current flows through body diode.Together
When from this state can rapidly turn off LS_FET, and the time that turn off process needs is by temperature, technique, drive circuit
The influence of supply voltage can be much smaller.The specific signal waveform schematic diagram of the technical scheme is as shown in Figure 9.
With reference to Figure 10, embodiments of the invention 2 are described in detail, but any restriction is not done to the claim of the present invention.
In the basic building unit of switching power circuit as shown in Figure 6, when the inductive current of outflow VSW nodes is negative
When, HS_FET is conducting in the transfer process of LS_FET conductings (DT1), and HS_FET body diode can be turned on and brought bigger
Reverse recovery loss, therefore HS_FET needs a new drive circuit, to reduce caused by HS_FET body diodes reversely
Recover loss.
As shown in Figure 10, a kind of switch power source driving circuit based on PWM controls, switching power circuit comprise at least upper
Metal-oxide-semiconductor HS_FET, lower metal-oxide-semiconductor HS_FET and inductance L1, HS_FET grid are used for the drive signal for accessing HS_FET, LS_FET
Grid be used for access LS_FET drive signals, the HS_FET drain electrode of source electrode, LS_FET is connected with L1 one end, LS_FET's
The signal input part and system of earth terminal of the source electrode as system, HS_FET drain electrode and the L1 other end respectively as system
Signal output part and both are interchangeable, or L1 earth terminal of the other end as system, HS_FET drain electrode and LS_FET's
Source electrode is respectively as the signal input part of system and the signal output part of system and both are interchangeable；
Drive circuit include upper metal-oxide-semiconductor driving power VCC_HS, lower metal-oxide-semiconductor driving power VCC_LS, sequential control circuit,
Upper metal-oxide-semiconductor drive circuit HS_DRIVER and lower metal-oxide-semiconductor drive circuit LS_DRIVER；
VCC_HS is upper metal-oxide-semiconductor drive circuitry；
VCC_LS is lower metal-oxide-semiconductor drive circuitry；
Sequential control circuit is used for reception system pwm control signal, generation system timing control signal, and PWM is controlled
Signal and timing control signal synthesize, metal-oxide-semiconductor pwm control signal and lower metal-oxide-semiconductor pwm control signal in generation, SECO electricity
Road includes signal input part, the first signal output part and secondary signal output end；
Upper metal-oxide-semiconductor drive circuit is used to receive the upper metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted
For upper metal-oxide-semiconductor drive signal, upper metal-oxide-semiconductor drive circuit includes transistor Q5, transistor Q6, transistor Q7, transistor Q8 and opened
The same type power semiconductor devices that S2, Q6 and HS_FET use same process to make is closed, Q5 drain electrode is connected with Q7 drain electrode
And positive source input is used as, source electrode is extremely connected with Q6 drain electrode and S2 input and is used as signal output part, grid respectively
As the first signal input part, the drain electrode of Q6 the grid output stage with S2, Q7 source electrode and Q8 respectively is connected, source electrode and Q8's
Source electrode is connected and is used as power cathode input, and S2 control pole is as secondary signal input, and Q7 grid is as the 3rd letter
Number input, Q8 grid is as the 4th signal input part；
Lower metal-oxide-semiconductor drive circuit is used to receive the lower metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted
For lower metal-oxide-semiconductor drive signal, it is defeated that the lower metal-oxide-semiconductor drive circuit includes positive source input, power cathode input, signal
Enter end and signal output part；
VCC_HS positive pole is connected with the positive source input of upper metal-oxide-semiconductor drive circuit, and negative pole drives with upper metal-oxide-semiconductor respectively
The power cathode input of dynamic circuit is connected with the source electrode of upper metal-oxide-semiconductor；
VCC_LS positive pole is connected with the positive source input of lower metal-oxide-semiconductor drive circuit, and negative pole drives with lower metal-oxide-semiconductor respectively
The power cathode input of dynamic circuit is connected with the source electrode of lower metal-oxide-semiconductor；
The signal input part of sequential control circuit is used to input pwm control signal, and the first signal output part drives with lower metal-oxide-semiconductor
The signal input part of dynamic circuit is connected, secondary signal output end, the 3rd signal output part, the 4th signal output part, the 5th signal
Output end the first signal input part with upper metal-oxide-semiconductor drive circuit, secondary signal input, the 3rd signal input part and respectively
Four signal input parts are connected；
The signal output part of upper metal-oxide-semiconductor drive circuit is connected with the grid of upper metal-oxide-semiconductor；
The signal output part of lower metal-oxide-semiconductor drive circuit is connected with the grid of lower metal-oxide-semiconductor.
The operation principle of the technical scheme is：It is quick to close in the transfer process of upper metal-oxide-semiconductor shut-off to lower metal-oxide-semiconductor conducting
After disconnected Q5, but do not open Q6 quickly at once.Now, by closure switch S2, Q6 can regard a diode- as
Connected MOSFET, its characteristic are that the voltage between drain electrode and source electrode is limited on Q6 threshold voltage a bit substantially.
Q6 and upper metal-oxide-semiconductor are realized due to the same type power semiconductor devices made of same process, then after S2 openings,
HS_FET will be in a weaker conducting state.By the size for selecting Q6, it is ensured that all or most of output
MOSFET parts in current flowing HS_FET, so as to avoid body diode D2 from turning on, or only sub-fraction electric current flows through
Body diode.Can rapidly turn off upper metal-oxide-semiconductor from this state simultaneously, and time for needing of turn off process by temperature,
Technique, the influence of drive circuit supply voltage can be much smaller.The specific signal waveform schematic diagram of the technical scheme is as shown in figure 11.
With reference to Figure 12, embodiments of the invention 3 are described in detail, but any restriction is not done to the claim of the present invention.
In the basic building unit of switching power circuit as shown in Figure 6, when the inductive current of outflow VSW nodes both may be used
Think just, or when negative, HS_FET and LS_FET body diode can turn on and bring bigger reverse recovery loss,
Therefore HS_FET and LS_FET is required for a new drive circuit, is damaged with reducing Reverse recovery caused by itself body diode
Consumption.
As shown in figure 12, a kind of driving electricity for being used to reduce upper and lower metal-oxide-semiconductor body diode losses in switching power circuit
Road, switching power circuit comprise at least upper metal-oxide-semiconductor HS_FET, lower metal-oxide-semiconductor LS_FET and inductance L1, upper metal-oxide-semiconductor HS_FET grid
Pole is used to accessing HS_FET drive signal, and LS_FET grid is used for the drive signal for accessing LS_FET, HS_FET source electrode,
LS_FET drain electrode is connected with L1 one end, the earth terminal of LS_FET source electrode as system, and HS_FET drain electrode and L1's is another
One end is respectively as the signal input part of system and the signal output part of system and both are interchangeable, or L1 other end conduct
The earth terminal of system, HS_FET drain electrode and LS_FET source electrode are defeated respectively as the signal input part of system and the signal of system
Go out end and both are interchangeable；
Drive circuit include upper metal-oxide-semiconductor driving power VCC_HS, lower metal-oxide-semiconductor driving power VCC_LS, sequential control circuit,
Upper metal-oxide-semiconductor drive circuit HS_DRIVER and lower metal-oxide-semiconductor drive circuit LS_DRIVER；
VCC_HS is upper metal-oxide-semiconductor drive circuitry；
VCC_LS is lower metal-oxide-semiconductor drive circuitry；
Sequential control circuit is used for reception system pwm control signal, generation system timing control signal, and PWM is controlled
Signal and timing control signal synthesize, metal-oxide-semiconductor pwm control signal and lower metal-oxide-semiconductor pwm control signal in generation, SECO electricity
Road include signal input part, the first signal output part, secondary signal output end, the 3rd signal output part, the 4th signal output part,
5th signal output part, the 6th signal output part, the 7th signal output part and the 8th signal output part；
Upper metal-oxide-semiconductor drive circuit is used to receive the upper metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted
For upper metal-oxide-semiconductor drive signal, upper metal-oxide-semiconductor drive circuit includes transistor Q5, transistor Q6, transistor Q7, transistor Q8 and opened
The same type power semiconductor devices that S2, Q6 and HS_FET use same process to make is closed, Q5 drain electrode is connected with Q7 drain electrode
And positive source input is used as, source electrode is extremely connected with Q6 drain electrode and S2 input and is used as signal output part, grid respectively
As the first signal input part, the drain electrode of Q6 the grid output stage with S2, Q7 source electrode and Q8 respectively is connected, source electrode and Q8's
Source electrode is connected and is used as power cathode input, and S2 control pole is as secondary signal input, and Q7 grid is as the 3rd letter
Number input, Q8 grid is as the 4th signal input part；
Lower metal-oxide-semiconductor drive circuit is used to receive the lower metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted
For lower metal-oxide-semiconductor drive signal, lower metal-oxide-semiconductor drive circuit includes transistor Q1, transistor Q2, transistor Q3, transistor Q4 and opened
The same type power semiconductor devices that S1, Q2 and LS_FET use same process to make is closed, Q1 drain electrode is connected with Q3 drain electrode
And positive source input is used as, source electrode is extremely connected with Q2 drain electrode and S1 input and is used as signal output part, grid respectively
As the first signal input part, the drain electrode of Q2 the grid output stage with S1, Q3 source electrode and Q4 respectively is connected, source electrode and Q4's
Source electrode is connected and is used as power cathode input, and S1 control pole is as secondary signal input, and Q3 grid is as the 3rd letter
Number input, Q4 grid is as the 4th signal input part；
VCC_HS positive pole is connected with the positive source input of upper metal-oxide-semiconductor drive circuit, and negative pole drives with upper metal-oxide-semiconductor respectively
The power cathode input of dynamic circuit is connected with the source electrode of upper metal-oxide-semiconductor；
VCC_LS positive pole is connected with the positive source input of lower metal-oxide-semiconductor drive circuit, and negative pole drives with lower metal-oxide-semiconductor respectively
The power cathode input of dynamic circuit is connected with the source electrode of lower metal-oxide-semiconductor；
The signal input part of sequential control circuit is used to input pwm control signal, and the first signal output part, secondary signal are defeated
Go out end, the 3rd signal output part, the 4th signal output part the first signal input part with lower metal-oxide-semiconductor drive circuit, second respectively
Signal input part, the 3rd signal input part, the 4th signal input part are connected；5th signal output part, the 6th signal output part,
The first signal input part with upper metal-oxide-semiconductor drive circuit, the secondary signal input respectively of seven signal output parts, the 8th signal output part
End, the 3rd signal input part, the 4th signal input part are connected；
The signal output part of upper metal-oxide-semiconductor drive circuit is connected with the grid of upper metal-oxide-semiconductor；
The signal output part of lower metal-oxide-semiconductor drive circuit is connected with the grid of lower metal-oxide-semiconductor.
The operation principle of the technical scheme is：
(1) in the transfer process that lower metal-oxide-semiconductor turns off to the conducting of upper metal-oxide-semiconductor, after rapidly switching off Q1, but it is at once not quick
Open Q2.Now, by closure switch S1, Q2 can regard a diode-connectedMOSFET as, and its characteristic is drain electrode
Voltage between source electrode is limited on Q2 threshold voltage a bit substantially.Because the same type made of same process is partly led
Body device realizes Q2 and lower metal-oxide-semiconductor, then after S1 openings, LS_FET will be in a weaker conducting state.It is logical
Cross selection Q2 size, it is ensured that the MOSFET parts in all or most of output current circulation LS_FET, so as to keep away
Exempt from body diode D1 conductings, or only sub-fraction electric current flows through body diode.Simultaneously can rapidly from this state
LS_FET is turned off, and the time that turn off process needs, by temperature, technique, the influence of drive circuit supply voltage can be much smaller.
(2) in the transfer process that upper metal-oxide-semiconductor turns off to the conducting of lower metal-oxide-semiconductor, after rapidly switching off Q5, but Q6 is not opened quickly at once.
Now, by closure switch S2, Q6 can regard a diode-connected MOSFET as, and its characteristic is drain electrode and source electrode
Between voltage be limited on Q6 threshold voltage a bit substantially.Due to the same type semiconductor devices made of same process
To realize Q6 and upper metal-oxide-semiconductor, then after S2 openings, HS_FET will be in a weaker conducting state.Pass through selection
Q6 size, it is ensured that the MOSFET parts in all or most of output current circulation HS_FET, so as to avoid body two
Pole pipe D2 is turned on, or only sub-fraction electric current flows through body diode.Can rapidly it be turned off from this state simultaneously
Metal-oxide-semiconductor, and the time that turn off process needs, by temperature, technique, the influence of drive circuit supply voltage can be much smaller.The technology
The specific signal waveform schematic diagram of scheme is as shown in figure 13.
The art of this patent except applying in the basic building unit of above-mentioned switching power circuit, if the of VSW connections
Three the current characteristics to come in and go out on line (i.e. circuit where L1) is similar to current source characteristic, i.e., switchs transfer process in upper down tube
In, electric current remains unchanged substantially.The technology of this patent can also be applied.
The art of this patent is in addition to the drive control suitable for MOSFET, equally applicable IGBT drive control.IGBT's
Driving method is similar to MOSFET, and has the problem of reverse recovery loss of body diode or anti-parallel diodes,
The art of this patent can also efficiently reduce this partition losses.
In summary, the present invention has advantages below：
1. the present invention switchs the drive circuit formed to upper metal-oxide-semiconductor and/or lower metal-oxide-semiconductor using by four transistors and one
Driving, effectively prevent the conducting of metal-oxide-semiconductor body diode, or only sub-fraction electric current flows through body diode, reduces body
Reverse recovery loss caused by diode.
2. the art of this patent is except applying in the basic building unit of above-mentioned switching power circuit, as long as VSW connections
The current characteristics that Article 3 comes in and goes out on line (i.e. circuit where L1) is similar to current source characteristic, i.e., is switched in upper down tube converted
Cheng Zhong, electric current remain unchanged substantially.The technology of this patent can also be applied.
3. the art of this patent is in addition to the drive control suitable for MOSFET, equally applicable IGBT drive control.IGBT
Driving method it is similar to MOSFET, and have asking for the reverse recovery loss of body diode or anti-parallel diodes
Topic, the art of this patent can also efficiently reduce this partition losses.
It is understood that above with respect to the specific descriptions of the present invention, it is merely to illustrate the present invention and is not limited to this
Technical scheme described by inventive embodiments.It will be understood by those within the art that still the present invention can be carried out
Modification or equivalent substitution, to reach identical technique effect；As long as meet use needs, all protection scope of the present invention it
It is interior.
Claims (3)
- A kind of 1. switch power source driving circuit based on PWM controls, it is characterised in that：Switching power circuit comprises at least upper MOS Pipe, lower metal-oxide-semiconductor and inductance, the grid of the upper metal-oxide-semiconductor are used for the drive signal for accessing metal-oxide-semiconductor, the grid of the lower metal-oxide-semiconductor For accessing lower metal-oxide-semiconductor drive signal, the source electrode of the upper metal-oxide-semiconductor, the drain electrode of lower metal-oxide-semiconductor are connected with one end of inductance, described Earth terminal of the source electrode of lower metal-oxide-semiconductor as system, the drain electrode of upper metal-oxide-semiconductor and the other end of inductance are defeated respectively as the signal of system Enter the signal output part at end and system and both are interchangeable, or earth terminal of the other end as system of the inductance, upper MOS The source electrode of the drain electrode of pipe and lower metal-oxide-semiconductor respectively as the signal input part of system and the signal output part of system and both can be mutual Change；Drive circuit includes upper metal-oxide-semiconductor driving power, lower metal-oxide-semiconductor driving power, sequential control circuit, upper metal-oxide-semiconductor drive circuit With lower metal-oxide-semiconductor drive circuit；The upper metal-oxide-semiconductor driving power is upper metal-oxide-semiconductor drive circuitry；The lower metal-oxide-semiconductor driving power is lower metal-oxide-semiconductor drive circuitry；The sequential control circuit is used for reception system pwm control signal, generation system timing control signal, and PWM is controlled Signal and timing control signal are synthetically generated metal-oxide-semiconductor pwm control signal and lower metal-oxide-semiconductor pwm control signal, the SECO Circuit includes signal input part, the first signal output part, secondary signal output end, the 3rd signal output part, the 4th signal output End and the 5th signal output part；The upper metal-oxide-semiconductor drive circuit is used to receive the upper metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted For upper metal-oxide-semiconductor drive signal, the upper metal-oxide-semiconductor drive circuit includes positive source input, positive source input, power supply and born Pole input, signal input part and signal output part；The lower metal-oxide-semiconductor drive circuit is used to receive the lower metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted For lower metal-oxide-semiconductor drive signal, the lower metal-oxide-semiconductor drive circuit includes transistor Q1, transistor Q2, transistor Q3, transistor Q4 With switch S1, the Q2 and lower metal-oxide-semiconductor use the same type power semiconductor devices that same process makes, the drain electrode of the Q1 with Q3 drain electrode is connected and is used as positive source input, and source electrode is extremely connected with Q2 drain electrode and S1 input and is used as signal respectively Output end, grid is as the first signal input part, the drain electrode of the grid of the Q2 output stage with S1, Q3 source electrode and Q4 respectively Be connected, source electrode is connected with Q4 source electrode and conduct power cathode input, the control pole of the S1 as secondary signal input, The grid of the Q3 is as the 3rd signal input part, and the grid of the Q4 is as the 4th signal input part；Positive source input of the positive pole of the upper metal-oxide-semiconductor driving power respectively with upper metal-oxide-semiconductor drive circuit is connected, negative pole point It is not connected with the power cathode input of upper metal-oxide-semiconductor drive circuit and the source electrode of upper metal-oxide-semiconductor；The positive pole of the lower metal-oxide-semiconductor driving power is connected with the positive source input of lower metal-oxide-semiconductor drive circuit, negative pole respectively with The power cathode input of lower metal-oxide-semiconductor drive circuit is connected with the source electrode of lower metal-oxide-semiconductor；The signal input part of the sequential control circuit is used to input pwm control signal, and the first signal output part drives with upper metal-oxide-semiconductor The signal input part of dynamic circuit is connected, secondary signal output end, the 3rd signal output part, the 4th signal output part, the 5th signal Output end the first signal input part with lower metal-oxide-semiconductor drive circuit, secondary signal input, the 3rd signal input part, respectively Four signal input parts are connected；The signal output part of the upper metal-oxide-semiconductor drive circuit is connected with the grid of upper metal-oxide-semiconductor；The signal output part of the lower metal-oxide-semiconductor drive circuit is connected with the grid of lower metal-oxide-semiconductor.
- A kind of 2. switch power source driving circuit based on PWM controls, it is characterised in that：Switching power circuit comprises at least upper MOS Pipe, lower metal-oxide-semiconductor and inductance, the grid of the upper metal-oxide-semiconductor are used for the drive signal for accessing metal-oxide-semiconductor, the grid of the lower metal-oxide-semiconductor For accessing lower metal-oxide-semiconductor drive signal, the source electrode of the upper metal-oxide-semiconductor, the drain electrode of lower metal-oxide-semiconductor are connected with one end of inductance, described Earth terminal of the source electrode of lower metal-oxide-semiconductor as system, the drain electrode of upper metal-oxide-semiconductor and the other end of inductance are defeated respectively as the signal of system Enter the signal output part at end and system and both are interchangeable, or earth terminal of the other end as system of the inductance, upper MOS The source electrode of the drain electrode of pipe and lower metal-oxide-semiconductor respectively as the signal input part of system and the signal output part of system and both can be mutual Change；Drive circuit includes upper metal-oxide-semiconductor driving power, lower metal-oxide-semiconductor driving power, sequential control circuit, upper metal-oxide-semiconductor drive circuit With lower metal-oxide-semiconductor drive circuit；The upper metal-oxide-semiconductor driving power is upper metal-oxide-semiconductor drive circuitry；The lower metal-oxide-semiconductor driving power is lower metal-oxide-semiconductor drive circuitry；The sequential control circuit is used for reception system pwm control signal, generation system timing control signal, and PWM is controlled Signal and timing control signal synthesize, metal-oxide-semiconductor pwm control signal and lower metal-oxide-semiconductor pwm control signal in generation, the sequential control It is defeated that circuit processed includes signal input part, the first signal output part, secondary signal output end, the 3rd signal output part, the 4th signal Go out end and the 5th signal output part；The upper metal-oxide-semiconductor drive circuit is used to receive the upper metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted For upper metal-oxide-semiconductor drive signal, the upper metal-oxide-semiconductor drive circuit includes transistor Q5, transistor Q6, transistor Q7, transistor Q8 With switch S2, the Q6 and upper metal-oxide-semiconductor use the same type power semiconductor devices that same process makes, the drain electrode of the Q5 with Q7 drain electrode is connected and is used as positive source input, and source electrode is extremely connected with Q6 drain electrode and S2 input and is used as signal respectively Output end, grid is as the first signal input part, the drain electrode of the grid of the Q6 output stage with S2, Q7 source electrode and Q8 respectively Be connected, source electrode is connected with Q8 source electrode and conduct power cathode input, the control pole of the S2 as secondary signal input, The grid of the Q7 is as the 3rd signal input part, and the grid of the Q8 is as the 4th signal input part；The lower metal-oxide-semiconductor drive circuit is used to receive the lower metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted For lower metal-oxide-semiconductor drive signal, it is defeated that the lower metal-oxide-semiconductor drive circuit includes positive source input, power cathode input, signal Enter end and signal output part；The positive pole of the upper metal-oxide-semiconductor driving power is connected with the positive source input of upper metal-oxide-semiconductor drive circuit, negative pole respectively with The power cathode input of upper metal-oxide-semiconductor drive circuit is connected with the source electrode of upper metal-oxide-semiconductor；The positive pole of the lower metal-oxide-semiconductor driving power is connected with the positive source input of lower metal-oxide-semiconductor drive circuit, negative pole respectively with The power cathode input of lower metal-oxide-semiconductor drive circuit is connected with the source electrode of lower metal-oxide-semiconductor；The signal input part of the sequential control circuit is used to input pwm control signal, and the first signal output part drives with lower metal-oxide-semiconductor The signal input part of dynamic circuit is connected, secondary signal output end, the 3rd signal output part, the 4th signal output part, the 5th signal Output end the first signal input part with upper metal-oxide-semiconductor drive circuit, secondary signal input, the 3rd signal input part, respectively Four signal input parts are connected；The signal output part of the upper metal-oxide-semiconductor drive circuit is connected with the grid of upper metal-oxide-semiconductor；The signal output part of the lower metal-oxide-semiconductor drive circuit is connected with the grid of lower metal-oxide-semiconductor.
- A kind of 3. switch power source driving circuit based on PWM controls, it is characterised in that：Switching power circuit comprises at least upper MOS Pipe, lower metal-oxide-semiconductor and inductance, the grid of the upper metal-oxide-semiconductor are used for the drive signal for accessing metal-oxide-semiconductor, the grid of the lower metal-oxide-semiconductor For accessing lower metal-oxide-semiconductor drive signal, the source electrode of the upper metal-oxide-semiconductor, the drain electrode of lower metal-oxide-semiconductor are connected with one end of inductance, described Earth terminal of the source electrode of lower metal-oxide-semiconductor as system, the drain electrode of upper metal-oxide-semiconductor and the other end of inductance are defeated respectively as the signal of system Enter the signal output part at end and system and both are interchangeable, or earth terminal of the other end as system of the inductance, upper MOS The source electrode of the drain electrode of pipe and lower metal-oxide-semiconductor respectively as the signal input part of system and the signal output part of system and both can be mutual Change；Drive circuit includes upper metal-oxide-semiconductor driving power, lower metal-oxide-semiconductor driving power, sequential control circuit, upper metal-oxide-semiconductor drive circuit With lower metal-oxide-semiconductor drive circuit；The upper metal-oxide-semiconductor driving power is upper metal-oxide-semiconductor drive circuitry；The lower metal-oxide-semiconductor driving power is lower metal-oxide-semiconductor drive circuitry；The sequential control circuit is used for reception system pwm control signal, generation system timing control signal, and PWM is controlled Signal and timing control signal synthesize, metal-oxide-semiconductor pwm control signal and lower metal-oxide-semiconductor pwm control signal in generation, the sequential control It is defeated that circuit processed includes signal input part, the first signal output part, secondary signal output end, the 3rd signal output part, the 4th signal Go out end, the 5th signal output part, the 6th signal output part, the 7th signal output part and the 8th signal output part；The lower metal-oxide-semiconductor drive circuit is used to receive the lower metal-oxide-semiconductor driving control signal of sequential control circuit output and by its turn Lower metal-oxide-semiconductor drive signal is turned to, the lower metal-oxide-semiconductor drive circuit includes transistor Q1, transistor Q2, transistor Q3, transistor Q4 and switch S1, the Q2 and lower metal-oxide-semiconductor use the same type power semiconductor devices that same process makes, the drain electrode of the Q1 It is connected with Q3 drain electrode and is used as positive source input, source electrode is extremely connected and as letter with Q2 drain electrode and S1 input respectively Number output end, grid is as the first signal input part, the leakage of the grid of the Q2 output stage with S1, Q3 source electrode and Q4 respectively Extremely it is connected, source electrode is connected with Q4 source electrode and is used as power cathode input, and the control pole of the S1 inputs as secondary signal End, the grid of the Q3 is as the 3rd signal input part, and the grid of the Q4 is as the 4th signal input part；The upper metal-oxide-semiconductor drive circuit is used to receive the upper metal-oxide-semiconductor pwm control signal of sequential control circuit output and converted For upper metal-oxide-semiconductor drive signal, the upper metal-oxide-semiconductor drive circuit includes transistor Q5, transistor Q6, transistor Q7, transistor Q8 With switch S2, the Q6 and upper metal-oxide-semiconductor use the same type power semiconductor devices that same process makes, the drain electrode of the Q5 with Q7 drain electrode is connected and is used as positive source input, and source electrode is extremely connected with Q6 drain electrode and S2 input and is used as signal respectively Output end, grid is as the first signal input part, the drain electrode of the grid of the Q6 output stage with S2, Q7 source electrode and Q8 respectively Be connected, source electrode is connected with Q8 source electrode and conduct power cathode input, the control pole of the S2 as secondary signal input, The grid of the Q7 is as the 3rd signal input part, and the grid of the Q8 is as the 4th signal input part；Positive source input of the positive pole of the upper metal-oxide-semiconductor driving power respectively with upper metal-oxide-semiconductor drive circuit is connected, negative pole point It is not connected with the power cathode input of upper metal-oxide-semiconductor drive circuit and the source electrode of upper metal-oxide-semiconductor；The positive pole of the lower metal-oxide-semiconductor driving power is connected with the positive source input of lower metal-oxide-semiconductor drive circuit, negative pole respectively with The power cathode input of lower metal-oxide-semiconductor drive circuit is connected with the source electrode of lower metal-oxide-semiconductor；The signal input part of the sequential control circuit is used to input pwm control signal, and the first signal output part, secondary signal are defeated Go out end, the 3rd signal output part, the 4th signal output part the first signal input part with lower metal-oxide-semiconductor drive circuit, second respectively Signal input part, the 3rd signal input part, the 4th signal input part are connected；5th signal output part, the 6th signal output part, The first signal input part with upper metal-oxide-semiconductor drive circuit, the secondary signal input respectively of seven signal output parts, the 8th signal output part End, the 3rd signal input part, the 4th signal input part are connected；The signal output part of the upper metal-oxide-semiconductor drive circuit is connected with the grid of upper metal-oxide-semiconductor；The signal output part of the lower metal-oxide-semiconductor drive circuit is connected with the grid of lower metal-oxide-semiconductor.
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