CN107841305A - 无机发光颗粒、无机发光颗粒膜以及包括其的led封装和显示装置 - Google Patents
无机发光颗粒、无机发光颗粒膜以及包括其的led封装和显示装置 Download PDFInfo
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- CN107841305A CN107841305A CN201710841580.0A CN201710841580A CN107841305A CN 107841305 A CN107841305 A CN 107841305A CN 201710841580 A CN201710841580 A CN 201710841580A CN 107841305 A CN107841305 A CN 107841305A
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- light
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- quantum dot
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- 239000002245 particle Substances 0.000 title claims abstract description 65
- 238000005538 encapsulation Methods 0.000 title claims abstract description 15
- 239000002096 quantum dot Substances 0.000 claims abstract description 91
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 58
- 239000002061 nanopillar Substances 0.000 claims description 56
- 239000004973 liquid crystal related substance Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 25
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 150000002927 oxygen compounds Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 48
- 239000004065 semiconductor Substances 0.000 description 24
- 239000010408 film Substances 0.000 description 16
- 238000001228 spectrum Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical group [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- -1 HgSe Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 101100063942 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) dot-1 gene Proteins 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- GANNOFFDYMSBSZ-UHFFFAOYSA-N [AlH3].[Mg] Chemical compound [AlH3].[Mg] GANNOFFDYMSBSZ-UHFFFAOYSA-N 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000002165 resonance energy transfer Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000011701 zinc Chemical group 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
公开了一种无机发光颗粒、无机发光颗粒膜以及包括其的LED封装和显示装置。所述无机发光颗粒包括:具有第一尺寸的无机氧化物;和贴附到无机氧化物且具有小于第一尺寸的第二尺寸的量子点。
Description
相关申请的交叉引用
本申请要求2016年9月19日在韩国提交的韩国专利申请No.10-2016-0119274的优先权益,在此通过参考将其整体并入本文,就如在此全部列出一样。
技术领域
本发明涉及量子点,特别地,涉及一种通过贴附到金属氧化物的量子点具有高亮度的无机发光颗粒、无机发光颗粒膜以及包括其的LED封装和显示装置。
背景技术
面对信息社会,处理和显示大量电子信息信号的显示器领域已经快速发展,且因此已经开发和使用了各种平板显示装置。作为平板显示装置,使用液晶显示装置(LCD)、等离子体显示面板装置(PDP)、场发射显示装置(FED)、有机发光二极管显示装置(OLED)等。
目前,已经进行了将量子点应用到显示装置的研究。
在不稳定状态的电子从导带向下跃迁到价带的同时,量子点发光。由于量子点具有较大消光系数且具有优良的量子效率,因此其产生强荧光。而且,由于发光波长根据量子点尺寸变化,因此通过调整量子点尺寸可获得整个可见光区域的光。
图1是示出根据现有技术的量子点的示意图。
参考图1,量子点1包括核10和壳20。主要用于核的材料是CdSe。包括CdSe核10的量子点1优势在于发出具有高色纯度的可见光。
但是,当通过多个量子点1形成膜时,降低了量子点膜的量子效率和/或亮度。
发明内容
因此,本发明涉及一种无机发光颗粒、无机发光颗粒膜以及包括其的LED封装和显示装置,其基本避免了由于现有技术的限制和不足导致的一项或多项问题。
本发明的目的在于提供一种无机发光颗粒、无机发光颗粒膜以及包括其的LED封装和显示装置,其改善了在量子点膜中产生的量子效率和/或亮度降低。
在下文描述中将列出本发明的其他特征和优势,根据说明书,一部分特征和优势是显而易见的,或者可通过实践本发明获知。通过所撰写的说明书及其权利要求以及所附附图中特别指出的结构将认识到并获得本发明的这些和其他优势。
为了实现这些和其他优势且根据本发明的目的,如文本所体现且广泛描述的,一种无机发光颗粒包括:具有第一尺寸的无机氧化物;和贴附到无机氧化物并具有小于第一尺寸的第二尺寸的的量子点。
在另一方面,一种无机发光颗粒膜包括上述无机发光颗粒。
在另一方面,一种液晶显示装置包括:液晶面板;在液晶面板下方且包括光源的背光单元;和位于液晶面板和背光单元之间的上述无机发光颗粒膜。
在另一方面,一种LED封装包括:LED芯片;和包括上述无机发光颗粒且覆盖LED芯片的封装部分。
在另一方面,一种液晶显示装置包括:具有上述LED封装的背光单元;和在背光单元上方的液晶面板。
在另一方面,一种发光二极管显示装置包括:基板;发光二极管,所述发光二极管包括彼此面对的第一电极和第二电极、以及具有上述无机发光颗粒且位于第一电极和第二电极之间的发光层;和在基板和发光二极管之间且连接至发光二极管的驱动元件。
将理解,上文的一般描述和下文的具体描述两者都是示范性和说明性的,且意在提供如所要求保护的本发明的进一步解释。
附图说明
本文包括附图以提供本发明的进一步理解,附图结合到说明书中并构成说明书的一部分,附图示出了本发明的实施例且与文字描述一起用于解释本发明的原理。附图中:
图1是示出根据现有技术的量子点的示意图;
图2是示出根据本发明第一实施例的无机发光颗粒的示意图;
图3是示出在无机发光颗粒中存在ZrO2的EDS波谱的图;
图4A至4D每一个都是示出无机发光颗粒中存在InP/ZnS量子点的EDS波谱的图;
图5是示出根据本发明第二实施例的无机发光颗粒膜的示意图;
图6是示出根据本发明第三实施例的无机发光颗粒膜的示意图;
图7是示出无机发光颗粒膜的亮度的图表;
图8是示出ZnSe纳米柱的吸收波谱的图表;
图9是示出ZnSe纳米柱的吸收波谱和InP/ZnS量子点的PL波谱的图表;
图10是示出根据本发明第四实施例的无机发光颗粒膜和包括其的液晶显示装置的示意性截面图;
图11是示出图10的液晶面板的示意性截面图;
图12是示出根据本发明第五实施例的LED封装的示意性截面图;和
图13是示出根据本发明第六实施例的发光二极管显示装置的示意性截面图。
具体实施方式
由于每个量子点都具有高量子效率,因此量子点发出的光具有高亮度。
但是,当通过多个量子点形成薄膜时,降低了颗粒之间的距离,且因此,由于福斯特(forster)共振能量转移(FRET)现象,导致薄膜的量子效率降低。而且,由于量子点具有小于光源波长的尺寸,因此量子点不能充分吸收光源的光。由此,量子点膜的亮度降低。
为了解决上述问题,本发明提供了一种无机发光颗粒,其包括具有第一尺寸的无机氧化物和贴附到无机氧化物且具有小于第一尺寸的第二尺寸的量子点。
在本发明的无机发光颗粒中,无机氧化物具有大于量子点的能带隙。
在本发明的无机发光颗粒中,无机氧化物是金属氧化物或硅氧化物。
在本发明的无机发光颗粒中,无机氧化物是ZrO2、TiO2、Fe2O3、NiO、MnO2、Al2O3、CeO2和SiO2中的一种。
在另一方面,本发明提供了一种无机发光颗粒膜,其包括上述无机发光颗粒。
本发明的无机发光颗粒膜还包括吸收430nm-470nm波长的光的纳米柱。
本发明的无机发光颗粒膜中,纳米柱具有小于无机氧化物且大于量子点的能带隙。
在本发明的无机发光颗粒膜中,纳米柱相对于无机发光颗粒具有5-30的重量%(w%)。
在再一方面,本发明提供了一种液晶显示装置,其包括液晶面板、位于液晶面板下方且包括光源的背光单元、和位于液晶面板和背光单元之间的上述无机发光颗粒膜。
在又一方面,本发明提供了一种LED(发光二极管)封装,其包括LED芯片和覆盖LED芯片且包括上述无机发光颗粒的封装部分。
在本发明的LED封装中,封装部分还包括吸收430nm-470nm波长的光的纳米柱。
在本发明的LED封装中,纳米柱具有小于无机氧化物且大于量子点的能带隙。
在另一方面,本发明提供了一种液晶显示装置,其包括具有上述LED封装的背光单元和位于背光单元上方的液晶面板。
在本发明的液晶显示装置中,封装部分还包括吸收430nm-470nm波长的光的纳米柱。
在本发明的液晶显示装置中,纳米柱具有小于无机氧化物且大于量子点的能带隙。
在又一方面,本发明提供了一种发光二极管显示装置,其包括基板、发光二极管(LED)、和位于基板和LED之间且连接到LED的驱动元件,所述LED包括位于基板上且彼此相对的第一电极和第二电极、以及具有上述无机发光颗粒且位于第一电极和第二电极之间的发光层。
在本发明的发光二极管显示装置中,发光层还包括吸收430nm-470nm波长的光的纳米柱。
在本发明的发光二极管显示装置中,纳米柱具有小于无机氧化物且大于量子点的能带隙。
现在将具体参考示范性实施例,其实例于附图中示出。附图中使用相同参考数字以表示相同或相似部件。
图2是示出根据本发明第一实施例的无机发光颗粒的示意图。
参考图2,该实施例的无机发光颗粒100包括无机氧化物110和贴附到无机氧化物110表面上的量子点120。换句话说,结合在无机氧化物110表面上的多个量子点120形成无机发光颗粒100。
无机氧化物110具有大于量子点120的尺寸(或直径)。例如,无机氧化物110的尺寸可以是100nm~300nm。
无机氧化物110可以是金属氧化物或硅氧化物。例如,无机氧化物110可以是ZrO2、TiO2、Fe2O3、NiO、MnO2、Al2O3、CeO2和SiO2中的一种。
量子点120包括核(未示出)和包围核的壳(未示出)。
核与壳中的每一个都可由半导体化合物制成。例如,核与壳中的每一个都可由II-V族化合物或者III-V族化合物制成。
核与壳分别由不同材料制成,所述材料选自CdSe、CdS、CdTe、ZnO、ZnSe、ZnS、ZnTe、HgSe、HgTe、CdZnSe、InP、InN、GaN、InSb、InAsP、InGaAs、GaAs、GaP、GaSb、AlP、AlN、AlAs、AlSb、CdSeTe和ZnCdSe。
量子点120具有小于无机氧化物110的尺寸,且具有小于无机氧化物110的能带隙。在无机氧化物110具有小于量子点120的能带隙的情况下,量子点120的能量传送到无机氧化物110,由此降低了量子点120的量子效率。换句话说,由于无机氧化物110不起发光作用,为了防止量子点120的能量传送到无机氧化物110,无机氧化物110优选具有大于量子点120的能带隙。
当光照射到无机发光颗粒100时,量子点120吸收特定波长的光且根据量子点120的核尺寸发出预定波长的可见光。
由于量子点120被贴附到无机氧化物110的表面,因此增加了量子点120之间的距离。换句话说,通过尺寸大于量子点120的无机氧化物110,增加了量子点120之间的距离。因此,避免了当形成具有多个量子点的膜时相邻量子点之间的距离减小引起的福斯特共振能量转移(FRET)现象,且由此能解决量子效率降低的问题。
<无机发光颗粒的合成>
(1)ZrO2颗粒上的带帽配体(Ligand Capping)
将ZrO2(100mg)放到巯基辛酸的甲苯溶液(100mM)中,并在80摄氏度下搅拌一天。
(2)无机发光颗粒
将上述化合物(1)和量子点(InP/ZnS,1g)放到甲苯(10mL)中并搅拌,之后去除未贴附的量子点。
因此,获得贴附(或结合)到由ZrO2制成的无机氧化物110的InP/ZnS量子点的无机发光颗粒。
图3是示出在无机发光颗粒中存在ZrO2的EDS波谱的图,图4A至4D每一个都是示出无机发光颗粒中存在InP/ZnS量子点的EDS波谱的图。在图中,x轴表示无机发光颗粒一侧到另一侧的距离,y轴表示每秒计数。
图3的EDS波谱中,示出检测到形成无机氧化物110的Zr原子。在图4A至4D各自的EDS波谱中,示出检测到形成量子点120的In原子、P原子、Zn原子和S原子。
图5是示出根据本发明第二实施例的无机发光颗粒膜的示意图。
参考图5,该实施例的无机发光颗粒膜200具有通过多个无机发光颗粒100形成的层。
如上所述,无机发光颗粒100包括较大尺寸的无机氧化物110、和贴附到无机氧化物110表面的量子点120,且由于无机氧化物110增加了量子点120之间的距离。因此,能够最小化量子点之间的距离减小导致的FRET现象。
图6是示出根据本发明第三实施例的无机发光颗粒膜的示意图。
参考图6,该实施例的无机发光颗粒膜300包括无机发光颗粒100和纳米柱(nanorod)310。
如上所述,无机发光颗粒100包括具有第一尺寸和第一能带隙的无机氧化物110、和贴附到无机氧化物110且具有小于第一尺寸的第二尺寸和小于第一能隙带的第二能隙带的量子点120。
纳米柱310由半导体化合物制成。纳米柱310具有小于第一尺寸且大于第二尺寸的第三尺寸(或主轴上的长度),且具有小于第一能隙带且大于第二能隙带的第三能隙带。
纳米柱310吸收光源的光且将能量传送到量子点120。因此,增加了量子点120的量子效率和无机发光颗粒膜300的亮度。
换句话说,纳米柱310被设置在相邻无机发光颗粒100之间,增加了相邻无机发光颗粒100的量子点120之间的距离。也就是,在一个无机发光颗粒100中,通过无机氧化物100增加量子点120之间的距离;在相邻无机发光颗粒100之间,通过纳米柱310增加量子点120之间的距离。由此,可进一步减少量子点之间的FRET现象且增加了量子点120的量子效率。
而且,由于纳米柱310的尺寸大于量子点120的尺寸,因此纳米柱310充分吸收光源的光并将能量传送至具有较低能带隙的量子点120。由此,进一步增加了量子点120的量子效率。纳米柱310吸收短波长的光(例如约430nm-470nm)。
在纳米柱310的能带隙小于量子点120的情况下,纳米柱310的能量不被传送到量子点120,且在纳米柱310的能带隙大于无机氧化物110的情况下,纳米柱310的能量被传送到量子点120以及无机氧化物110。在本发明中,纳米柱310具有小于无机氧化物110的第一能带隙且大于量子点120的第二能带隙的第三能带隙,由此可最大化量子点120的发光效率。
纳米柱310为第一方向长度大于第二方向长度的柱状。但是,与具有核和壳且发光的量子点不同,纳米柱310由单一材料制成且不用于发光。因此,纳米柱310吸收的大部分光能被传送到量子点120且用于量子点120的发光。
例如,纳米柱可由ZnSe、SnSeS、ZnO、GaP和GaN中的一种制成。
测量由InP/ZnS量子点形成的膜(对比例,#1)、由具有贴附到ZrO2无机氧化物的InP/ZnS量子点的无机发光颗粒形成的膜(实验例1,#2)、和由具有贴附至ZrO2无机氧化物的InP/ZnS量子点的无机发光颗粒以及ZnSe纳米柱形成的膜(实验例2-6,#3-#7)的亮度,所述亮度记载于表1中并于图7中示出。
实验例2-6是相对于无机发光颗粒分别具有5wt%、10wt%、15wt%、30wt%和60wt%的纳米柱的膜。
[表1]
#1 | #2 | #3 | #4 | #5 | #6 | #7 | |
亮度 | 641 | 1358 | 1587 | 1927 | 2110 | 1915 | 1891 |
参考表1和图7,实验例1的无机发光颗粒膜的亮度大于对比例的亮度。换句话说,当如第二实施例中所述,无机发光颗粒膜200包括具有贴附至无机氧化物110的量子点120的无机发光颗粒100时,增加了无机发光颗粒膜200的亮度。
而且,实验例2-6的无机发光颗粒膜的亮度每一个都大于对比例的亮度。换句话说,当如第三实施例中所述,无机发光颗粒膜300包括具有贴附至无机氧化物110的量子点120的无机发光颗粒100和纳米柱310时,进一步增加了无机发光颗粒膜300的亮度。
随着纳米柱310的wt%增加,无机发光颗粒膜300的亮度也增加,但是在超过15wt%时亮度降低。因此,纳米柱310相对于无机发光颗粒可具有5wt%~30wt%。当纳米柱310的含量非常低(例如低于5wt%)时,很难通过纳米柱310获得亮度增加的效果,且当纳米柱310的含量非常高(超过30wt%)时,自量子点120发出的大部分光都被纳米柱310吸收,由此降低了亮度。
图8是示出ZnSe纳米柱的吸收波谱的图表,图9是示出ZnSe纳米柱的吸收波谱和InP/ZnS量子点的PL波谱的图表。
参考图8,ZnSe纳米柱吸收约430nm~470nm波长的光。而且,参考图9,InP/ZnS量子点具有约520nm~540nm的PL波谱。
图10是示出根据本发明第四实施例的无机发光颗粒膜和包括其的液晶显示装置的示意性截面图,图11是示出图10的液晶面板的示意性截面图。
参考图10,液晶显示装置400作为该实施例的显示装置,包括液晶面板410、位于液晶面板410下方的背光单元480、和位于液晶面板410和背光单元480之间的无机发光颗粒膜470。
参考图11,液晶面板410包括彼此面对的第一基板420和第二基板450、以及***到第一基板420和第二基板450之间且包括液晶分子462的液晶层460。
栅极422形成在第一基板420上,栅极绝缘层424形成为覆盖栅极422。栅极线(未示出)形成在第一基板420上且连接至栅极422。
半导体层426形成在栅极绝缘层424上并对应于栅极422。半导体层424可由氧化物半导体材料制成。或者,半导体层424可包括非晶硅的有源层和杂质掺杂的非晶硅的欧姆接触层。
源极430和漏极432形成在半导体层426上且彼此间隔。数据线(未示出)形成为与栅极线交叉从而限定像素区且连接至源极430。
栅极422、半导体层426、源极430和漏极432形成了薄膜晶体管Tr。
钝化层434形成在薄膜晶体管Tr上且具有暴露漏极432的漏极接触孔436。
像素电极440和公共电极442形成在钝化层434上。像素电极440经由漏极接触孔436连接至漏极432,像素电极440和公共电极442交替设置。
黑矩阵454形成在第二基板450上且遮挡形成了薄膜晶体管Tr、栅极线和数据线的非显示区。而且,形成与像素区对应的滤色层456。
第一基板420和第二基板450彼此耦接,两基板间具有液晶层460。通过像素电极440和公共电极442之间产生的电场操作液晶分子462。
尽管图中未示出,但是在第一基板420和第二基板450每一个的内表面上形成接触液晶层460的取向膜。偏振板分别贴附到第一基板和第二基板的外表面上,且具有彼此垂直的透射轴。
背光单元480包括光源(未示出)且将光提供至液晶面板410。
根据光源位置,背光单元480可分成直下型和边缘型。
当背光单元480是直下型时,背光单元可包括覆盖液晶面板410的底部框架,多个光源可设置在底部框架的水平表面上。
当背光单元480是边缘型时,背光单元可包括覆盖液晶面板410的底部框架,导光板可位于底部框架的水平表面上,光源可设置在导光板的至少一侧。
光源发出约430nm~470nm短波长的光。
无机发光颗粒膜470位于液晶面板410和背光单元480之间,且提高了背光单元480提供的光的色纯度。
无机发光颗粒膜470包括无机发光颗粒100和纳米柱310,每一个无机发光颗粒100都包括无机氧化物110和贴附到无机氧化物110的量子点120。量子点120发出绿色波长区域或者红色波长区域的光。
如上所述,由于通过无机氧化物110增加了量子点120之间的距离,因此增加了量子点120的量子效率,并且还通过纳米柱310增加了相邻无机发光颗粒100的量子点120之间的距离,因此进一步增加了量子点120的量子效率。因此,增加了包括无机发光颗粒膜470的液晶显示装置400的亮度。
或者,无机发光颗粒膜470可包括无机发光颗粒100,而不具有纳米柱310。
图12是示出根据本发明第五实施例的LED封装的示意性截面图。
参考图12,该实施例的LED封装500包括LED芯片510和覆盖LED芯片510的封装部分520。
封装部分520包括具有无机氧化物(图2的110)和贴附到无机氧化物110的量子点(图2的120)的无机发光颗粒100和纳米柱310。或者,封装部分520可包括无机发光颗粒100,而不具有纳米柱310。
量子点120发出绿色波长区域或红色波长区域的光。LED芯片510可以是发出约430nm~470nm波长的光的蓝色LED芯片。
LED封装500可进一步包括外壳530以及分别经由第一引线552和第二引线554连接至LED芯片510且暴露到外壳530之外的第一电极引线542和第二电极引线544。
外壳530包括主体532以及自主体532顶表面凸起且用作反射面的侧壁534。LED芯片510位于主体532上且被侧壁534包围。
如上所述,由于通过无机氧化物110增加了量子点120之间的距离,因此增加了量子点120的量子效率,并且还通过纳米柱310增加了相邻无机发光颗粒100的量子点120之间的距离,因此进一步增加了量子点120的量子效率。因此,增加了包括封装部分520的LED封装500的亮度。
图13是示出根据本发明第六实施例的发光二极管显示装置的示意性截面图。
参考图13,该实施例的发光二极管显示装置600包括基板610、基板610上的驱动元件Tr和连接至驱动元件Tr的发光二极管D。
半导体层622形成在基板610上且由氧化物半导体材料或多晶硅制成。
当半导体层622由氧化物半导体材料制成时,光屏蔽图案可形成在半导体层622下方,且光屏蔽图案用于防止光进入半导体层622中并防止半导体层622由于光劣化。或者,当半导体层622由多晶硅制成时,半导体层622的两侧可掺杂有杂质。
栅极绝缘层624形成在半导体层622上且由绝缘材料制成。栅极绝缘层624可由诸如氧化硅或氮化硅的无机绝缘材料制成。
栅极630与半导体层622的中心部分对应地形成在栅极绝缘层624上,且由诸如金属的导电材料制成。
层间绝缘层632形成在栅极630上且由绝缘材料制成。层间绝缘层632可由诸如氧化硅或氮化硅的无机绝缘材料制成,或者由诸如苯并环丁烯或光丙烯的有机绝缘材料制成。
层间绝缘层632和栅极绝缘层624具有暴露半导体层622两侧的第一接触孔634和第二接触孔636。第一接触孔634和第二接触孔636位于栅极630的两侧且与栅极630间隔开。
源极640和漏极642形成在层间绝缘层632上且由诸如金属的导电材料制成。
源极640和漏极642彼此间隔开,其间具有栅极630,且分别经由第一接触孔634和第二接触孔636接触半导体层622的两侧。
半导体层622、栅极630、源极640和漏极642形成了薄膜晶体管Tr作为驱动元件Tr。
薄膜晶体管Tr具有栅极630、源极640和漏极642位于半导体层622上的共平面结构。
或者,薄膜晶体管Tr可具有栅极位于半导体层下方且源极和漏极位于半导体层上方的反向交错结构。该情况下,半导体层可由非晶硅制成。
尽管图中未示出,但是栅极线和数据线彼此交叉以限定像素区,且进一步形成连接到栅极线和数据线的开关元件。开关元件连接到驱动元件的薄膜晶体管Tr。
而且,可与栅极线或数据线平行且相间隔地形成电源线,可形成用于在一帧期间保持作为驱动元件的薄膜晶体管Tr的栅极630电压的存储电容。
钝化层650形成为覆盖薄膜晶体管Tr且具有暴露漏极642的漏极接触孔652。
在每个像素区中单独形成第一电极660,第一电极660经由漏极接触孔652连接到薄膜晶体管Tr的漏极642。第一电极660可用作阳极,且可由具有相对高功函数的导电材料制成。例如,第一电极660可由诸如氧化铟锡(ITO)或氧化铟锌(IZO)的透明导电材料制成。
当发光二极管显示装置600是顶发光型显示装置时,反射电极或反射层可进一步形成在第一电极660下方。例如,反射电极或反射层可由铝-钯-铜(APC)合金制成。
堤岸层668形成在钝化层650上并覆盖第一电极660的边缘。堤岸层668暴露第一电极660的对应于像素区的中心部分。
发光层662形成在第一电极660上且包括具有无机氧化物(图2的110)和贴附到无机氧化物110的量子点(图2的120)的无机发光颗粒100以及纳米柱310。
或者,发光层662可包括无机发光颗粒100,而不具有纳米柱310。
为了提高发光效率,可进一步形成顺序叠置在第一电极660和发光层662之间的空穴注入层和空穴传输层、和顺序叠置在发光层662和第二电极666之间的电子传输层和电子注入层。
第二电极666形成在具有发光层662的基板610上。第二电极666可位于整个显示区的上方,第二电极666可用作阴极且可由具有相对低功函数的导电材料制成。例如,第二电极666可由铝(Al)、镁(Mg)和铝-镁(AlMg)合金中的一种制成。
第一电极660、发光层662和第二电极666形成了发光二极管D。
如上所述,由于通过无机氧化物110增加了量子点120之间的距离,因此增加了量子点120的量子效率,并且还通过纳米柱310增加了相邻无机发光颗粒100的量子点120之间的距离,因此进一步增加了量子点120的量子效率。因此,该实施例的发光二极管显示装置600能显示高亮度图像。
本领域技术人员将理解,在本发明中可作出各种修改和变化而不脱离本发明的精神和范围。由此,本发明意在覆盖本发明的上述修改和变化,只要其落入所附权利要求及其等价物的范围内即可。
Claims (18)
1.一种无机发光颗粒,包括:
具有第一尺寸的无机氧化物;和
贴附到无机氧化物且具有小于第一尺寸的第二尺寸的量子点。
2.如权利要求1所述的无机发光颗粒,其中无机氧化物具有大于量子点的能带隙。
3.如权利要求1所述的无机发光颗粒,其中无机氧化物是金属氧化物或硅氧化物。
4.如权利要求3所述的无机发光颗粒,其中无机氧化物是ZrO2、TiO2、Fe2O3、NiO、MnO2、Al2O3、CeO2和SiO2中的一种。
5.一种无机发光颗粒膜,包括如权利要求1所述的无机发光颗粒。
6.如权利要求5所述的无机发光颗粒膜,还包括吸收约430nm~470nm波长的光的纳米柱。
7.如权利要求6所述的无机发光颗粒膜,其中至少一个纳米柱具有小于无机氧化物且大于量子点的能带隙。
8.如权利要求6所述的无机发光颗粒膜,其中至少一个纳米柱相对于无机发光颗粒具有约5wt%~30wt%。
9.一种液晶显示装置,包括:
液晶面板;
在液晶面板下方且包括光源的背光单元;和
如权利要求5所述的无机发光颗粒膜,所述无机发光颗粒膜设置于液晶面板和背光单元之间。
10.一种发光二极管(LED)封装,包括:
LED芯片;和
封装部分,所述封装部分包括如权利要求1所述的无机发光颗粒且覆盖LED芯片。
11.如权利要求10所述的发光二极管封装,其中封装部分还包括吸收约430nm~470nm波长的光的纳米柱。
12.如权利要求11所述的发光二极管封装,其中至少一个纳米柱具有小于无机氧化物且大于量子点的能带隙。
13.一种液晶显示装置,包括:
背光单元,所述背光单元包括如权利要求10所述的LED封装;和
在背光单元上方的液晶面板。
14.如权利要求13所述的液晶显示装置,其中封装部分还包括吸收约430nm~470nm波长的光的纳米柱。
15.如权利要求14所述的液晶显示装置,其中至少一个纳米柱具有小于无机氧化物且大于量子点的能带隙。
16.一种发光二极管显示装置,包括:
基板;
发光二极管,所述发光二极管包括彼此面对的第一电极和第二电极以及位于第一电极和第二电极之间的发光层,所述发光层包括如权利要求1所述的无机发光颗粒;和
在基板和发光二极管之间且连接至发光二极管的驱动元件。
17.如权利要求16所述的发光二极管显示装置,其中发光层还包括吸收约430nm~470nm波长的光的纳米柱。
18.如权利要求17所述的发光二极管显示装置,其中至少一个纳米柱具有小于无机氧化物且大于量子点的能带隙。
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