CN107819081A - Encapsulating structure, method for packing and optoelectronic device - Google Patents
Encapsulating structure, method for packing and optoelectronic device Download PDFInfo
- Publication number
- CN107819081A CN107819081A CN201711089375.XA CN201711089375A CN107819081A CN 107819081 A CN107819081 A CN 107819081A CN 201711089375 A CN201711089375 A CN 201711089375A CN 107819081 A CN107819081 A CN 107819081A
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- Prior art keywords
- layer
- water accepting
- combined liquid
- encapsulating structure
- luminescent device
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Links
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000012856 packing Methods 0.000 title claims abstract description 26
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 201
- 239000011800 void material Substances 0.000 claims abstract description 183
- 239000000463 material Substances 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 230000004888 barrier function Effects 0.000 claims abstract description 58
- 238000007789 sealing Methods 0.000 claims abstract description 31
- 230000002745 absorbent Effects 0.000 claims description 66
- 239000002250 absorbent Substances 0.000 claims description 66
- 239000002105 nanoparticle Substances 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 229910052681 coesite Inorganic materials 0.000 claims description 25
- 229910052906 cristobalite Inorganic materials 0.000 claims description 25
- 229910052682 stishovite Inorganic materials 0.000 claims description 25
- 229910052905 tridymite Inorganic materials 0.000 claims description 25
- 229910044991 metal oxide Inorganic materials 0.000 claims description 23
- 238000001035 drying Methods 0.000 claims description 22
- 239000002994 raw material Substances 0.000 claims description 22
- 239000002274 desiccant Substances 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 17
- 150000004706 metal oxides Chemical class 0.000 claims description 16
- 229910052755 nonmetal Inorganic materials 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000004215 Carbon black (E152) Substances 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 11
- 229930195733 hydrocarbon Natural products 0.000 claims description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229920000620 organic polymer Polymers 0.000 claims description 11
- 239000003960 organic solvent Substances 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 8
- 229910052593 corundum Inorganic materials 0.000 claims description 8
- 125000002524 organometallic group Chemical group 0.000 claims description 8
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 239000011575 calcium Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000280 densification Methods 0.000 claims description 5
- 230000032683 aging Effects 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000000016 photochemical curing Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000013007 heat curing Methods 0.000 claims description 3
- 229910021650 platinized titanium dioxide Inorganic materials 0.000 claims description 3
- 238000000352 supercritical drying Methods 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 235000013339 cereals Nutrition 0.000 claims description 2
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 507
- 239000000243 solution Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 24
- 230000000694 effects Effects 0.000 description 19
- 239000002904 solvent Substances 0.000 description 19
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 12
- 238000005245 sintering Methods 0.000 description 12
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 10
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 9
- 239000000499 gel Substances 0.000 description 9
- 230000009471 action Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 239000000395 magnesium oxide Substances 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- 229920001169 thermoplastic Polymers 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000000292 calcium oxide Substances 0.000 description 5
- 239000013047 polymeric layer Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000004416 thermosoftening plastic Substances 0.000 description 5
- -1 wherein Chemical class 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004964 aerogel Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 230000009931 harmful effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- 239000011240 wet gel Substances 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 241001661355 Synapsis Species 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229960004643 cupric oxide Drugs 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 230000008642 heat stress Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000000887 hydrating effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KELHQGOVULCJSG-UHFFFAOYSA-N n,n-dimethyl-1-(5-methylfuran-2-yl)ethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=C(C)O1 KELHQGOVULCJSG-UHFFFAOYSA-N 0.000 description 1
- HIRWGWMTAVZIPF-UHFFFAOYSA-N nickel;sulfuric acid Chemical compound [Ni].OS(O)(=O)=O HIRWGWMTAVZIPF-UHFFFAOYSA-N 0.000 description 1
- 230000003204 osmotic effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000000659 thermocoagulation Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a kind of encapsulating structure, method for packing and optoelectronic device, wherein, the encapsulating structure includes：Substrate；Luminescent device, it is arranged on a side surface of substrate；Combined liquid-proof layer, covering are arranged on the exposed surface of luminescent device；Reticulated void layer, it is arranged on surface of the combined liquid-proof layer away from substrate, the material of reticulated void layer includes aeroge；First water accepting layer, it is arranged on the surface of remote combined liquid-proof layer of reticulated void layer, and be connected with base plate seals；At least one layer of hermetic barrier layers, are connected with base plate seals, and to form a sealing space, the first water accepting layer, reticulated void layer, combined liquid-proof layer and luminescent device are arranged in sealing space.The encapsulating structure solves the problems, such as sealing effectiveness difference of the encapsulating structure to steam of luminescent device in the prior art, realizes and effectively protects luminescent device from extraneous moisture attacks and improve sealing effectiveness.
Description
Technical field
The present invention relates to encapsulation technology field, in particular to a kind of encapsulating structure, method for packing and optoelectronic device.
Background technology
Realize Flexible Displays, it is considered to be an important directions of Display Technique development.It is but flexible for present condition
Display moves towards industrialization and still suffers from lot of challenges, and these challenges mainly include：How to prepare at low temperature with high-performance and
The thin film transistor (TFT) of high reliability, flexible electrode how is prepared, and how flexible el device is carried out effective thin
Film encapsulation etc..Wherein, as people are to the quality of flexible el device and the requirement more and more higher in life-span, envelope how is eliminated
Principal element-the steam in its quality and life-span is influenceed in dress, has become the problem of people increasingly pay close attention to.
To solve the above problems, luminescent device typically is protected by making the fexible film of encapsulation electroluminescent device,
But existing flexible device thin film encapsulation processes are because reaction temperature is higher, generally higher than 130 DEG C, more than bearing for luminescent device
Scope, and with the increase for making film thickness, the temperature of accumulation will be higher；Also, high temperature is also easily caused the film layer of making
Between produce internal stress, and there is phenomena such as hole, these factors all directly affects the yield of flexible el device
And the life-span.In the prior art also using the encapsulating structure for being internally provided with drier, but drier just fails in a short time, makes
It is relatively low with the life-span, packaging technology is added, but the effect of hermetically drying is not lasting.
The content of the invention
It is a primary object of the present invention to provide a kind of encapsulating structure, method for packing and optoelectronic device, to solve existing skill
The problem of encapsulating structure of luminescent device is to the sealing effectiveness difference of steam in art.
To achieve these goals, according to an aspect of the invention, there is provided a kind of encapsulating structure, the encapsulating structure bag
Include：Substrate；Luminescent device, it is arranged on a side surface of substrate；Combined liquid-proof layer, covering are arranged on the exposed surface of luminescent device
On；Reticulated void layer, it is arranged on surface of the combined liquid-proof layer away from substrate, the material of the reticulated void layer includes aeroge；First
Water accepting layer, it is arranged on the surface of remote combined liquid-proof layer of reticulated void layer, and the first water accepting layer is connected with base plate seals；At least one
Layer hermetic barrier layers, are connected with base plate seals, to form a sealing space, the first water accepting layer, reticulated void layer, combined liquid-proof layer and hair
Optical device is arranged in the sealing space.
Further, reticulated void layer is connected with base plate seals, to seal luminescent device.
Further, reticulated void layer is one pack system aeroge or multicomponent aeroge, is preferably formed as one pack system aeroge
Raw material be selected from SiO2Nano particle, Al2O3Nano particle, V2O5Nano particle and TiO2One or more in nano particle,
The raw material for forming multicomponent aeroge is selected from Al2O3/SiO2Nano particle, TiO2/SiO2Nano particle, Fe/SiO2Nano particle,
Pt/TiO2Nano particle, (C60/C70)-SiO2Nano particle and CaO/MgO/SiO2One or more in nano particle.
Further, the thickness of reticulated void layer is between 60nm~5um.
Further, the absorbent material of the first water accepting layer is the first absorbent material, and the first absorbent material is additionally arranged at netted
In the reticulated void of void layer.
Further, the raw material for forming the first absorbent material includes liquid desiccant, and the liquid desiccant has photocuring
Or the property of heat cure；It is preferred that the liquid drier includes the hydrocarbon organic solvent containing aluminium base.
Further, the first water accepting layer is desiccants layer.
Further, the encapsulating structure also includes：Second water accepting layer, be arranged on the first water accepting layer and hermetic barrier layers it
Between.
Further, the absorbent material of the second water accepting layer is the second absorbent material, and the second absorbent material is selected from calcium, metal oxygen
One or more in compound, sulfate and organo metallic oxide.
Further, forming the raw material of combined liquid-proof layer includes nanometer particle ink, the nano particle choosing in nanometer particle ink
One or more from metal oxide, metal nitride, metal fluoride, nonmetal oxide and non-metal nitride；
Or combined liquid-proof layer is organic polymer layers and the overlapping sandwich construction set of inorganic layer.
Further, the material of hermetic barrier layers is organic polymer and/or inorganic matter；Or hermetic barrier layers include
The UV glue-lines being arranged on the first water accepting layer exposed surface and the polymeric layer or glass that are arranged on UV glue-line exposed surfaces
Lid.
To achieve these goals, according to another aspect of the present invention, there is provided a kind of method for packing, the method for packing
Comprise the following steps：S1, luminescent device is set on a side surface of substrate；S2, luminescent device remote substrate it is exposed
Combined liquid-proof layer is set on surface；S3, aeroge raw material is set on the surface of the remote substrate of combined liquid-proof layer, to form reticulated void
Layer；S4, the first water accepting layer is set on the surface of the remote combined liquid-proof layer of reticulated void layer, makes the first water accepting layer and substrate surface close
Envelope connection；S5, set on the exposed surface of the first water accepting layer, reticulated void layer, combined liquid-proof layer and luminescent device at least one layer of close
Barrier is blockaded, hermetic barrier layers is connected with base plate seals.
Further, step S2 includes：Nanometer particle ink is set on the exposed surface of the remote substrate of luminescent device,
Pre- combined liquid-proof layer is formed after the drying, and flashing light sinters the combined liquid-proof layer that pre- combined liquid-proof layer forms densification；Or the remote base in luminescent device
Organic polymer layers and the inorganic layer overlapping sandwich construction set are set on the exposed surface of plate, to form combined liquid-proof layer.
Further, step S3 includes：Burin-in process is carried out to the material solution for forming aeroge, obtains aeroge aging
Solution；Aeroge aged solution is set on the exposed surface of pre- combined liquid-proof layer or the remote substrate of combined liquid-proof layer, net is formed after drying
Shape void layer, the preferably drying process of aeroge aged solution are supercritical drying process.
Further, step S4 includes：The first absorbent material is set on the surface of the remote combined liquid-proof layer of reticulated void layer,
The first water accepting layer is formed after heating, wherein, forming the raw material of the first absorbent material includes the hydrocarbon organic solvent containing aluminium base, excellent
Heating-up temperature is selected between 60~80 DEG C；Or desiccants are set on the surface of the remote combined liquid-proof layer of reticulated void layer,
Form the first water accepting layer.
Further, after step s4, the method for packing also includes：On the exposed surface of the first water accepting layer, use
Chemical vapour deposition technique, vacuum vapour deposition or atomic layer deposition method set the second absorbent material, form the second water accepting layer, wherein,
One or more of second absorbent material in calcium, metal oxide, sulfate and organo metallic oxide.
To achieve these goals, according to a further aspect of the invention, there is provided a kind of optoelectronic device, the optoelectronic device
Including above-mentioned encapsulating structure.
Apply the technical scheme of the present invention, there is provided a kind of encapsulating structure, method for packing and optoelectronic device, due to using from
Under it is supreme be respectively substrate, luminescent device, combined liquid-proof layer, reticulated void layer, the encapsulation knot of the first water accepting layer and hermetic barrier layers
Structure, luminescent device is sealed in the space between each layer and substrate, isolates outer most steam using hermetic barrier layers, and
Its straight tackling steam effect is fine, and steam from the contact position of hermetic barrier layers and substrate enter sealing space in probability compared with
Greatly, because the first water accepting layer (part being connected with base plate seals) of side can first absorb water saturation, the steam of saturation part is dense
Degree uprises, and high concentration steam can be to the low concentration steam region (i.e. the central area of reticulated void layer and the first water accepting layer) of centre
Diffusion, and reticulated void layer has multiple-void structure, compared to diffusion is easier in the first water accepting layer, most of steam passes through more empty
The passage of gap is diffused in reticulated void layer, and because the first water accepting layer of central area is more dried and has stronger steam
Absorption affinity, steam enters the first water accepting layer of central area more easily by interstitial channels under its sucking action, makes in space
Steam be inhaled into the first water accepting layer of central area, so as to realize that guiding steam enters from the marginal position of the first water accepting layer
To central area, steam is preferably absorbed by the first water accepting layer, risen compared to actual only lateral location in existing encapsulating structure
The water accepting layer of water sorption, improve the utilization rate of the first water accepting layer.By using above-mentioned technical proposal, solves prior art
The problem of encapsulating structure of middle luminescent device is to the sealing effectiveness difference of steam, the utilization rate for improving the first water accepting layer is realized, is had
Protection luminescent device in effect ground is from extraneous moisture attacks.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages.
Below with reference to figure, the present invention is further detailed explanation.
Brief description of the drawings
The Figure of description for forming the part of the present invention is used for providing a further understanding of the present invention, and of the invention shows
Meaning property embodiment and its illustrate be used for explain the present invention, do not form inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 shows a kind of schematic diagram of classical encapsulating structure provided by the present invention；
Fig. 2 shows a kind of schematic diagram of preferable encapsulating structure provided by the present invention；
Fig. 3 shows the schematic diagram of another preferable encapsulating structure provided by the present invention；And
Fig. 4 shows a kind of flow chart of classical method for packing provided by the present invention.
Wherein, above-mentioned accompanying drawing marks including the following drawings：
1st, substrate；2nd, luminescent device；3rd, combined liquid-proof layer；4th, reticulated void layer；5th, the first water accepting layer；6th, hermetic barrier layers；7、
The first absorbent material being arranged in reticulated void；8th, the second water accepting layer.
Embodiment
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.Describe the present invention in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
In order that those skilled in the art more fully understand the present invention program, below in conjunction with the embodiment of the present invention
Accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill people
The every other embodiment that member is obtained under the premise of creative work is not made, it should all belong to the model that the present invention protects
Enclose.
It should be noted that term " first " in description and claims of this specification and above-mentioned accompanying drawing, "
Two " etc. be for distinguishing similar object, without for describing specific order or precedence.It should be appreciated that so use
Data can exchange in the appropriate case, so as to embodiments of the invention described herein.In addition, term " comprising " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing series of steps or unit
Process, method, system, product or equipment are not necessarily limited to those steps clearly listed or unit, but may include without clear
It is listing to Chu or for the intrinsic other steps of these processes, method, product or equipment or unit.
As described in background technology, made using the higher technique of reaction temperature encapsulate flexible device in the prior art
During the fexible film of part, high temperature failure device can be produced, namely the problem of temperature overheating when being packaged device be present.The application
Inventor studied regarding to the issue above, it is proposed that a kind of encapsulating structure, method for packing and optoelectronic device.
In a kind of typical embodiment of the application, as shown in Figure 1, there is provided a kind of encapsulating structure, the encapsulating structure bag
Include：Substrate 1, luminescent device 2, combined liquid-proof layer 3, reticulated void layer 4, the first water accepting layer 5 and at least one layer of hermetic barrier layers 6, wherein：
Luminescent device 2, it is arranged on a side surface of substrate 1；
Combined liquid-proof layer 3, covering are arranged on the exposed surface of luminescent device 2；
Reticulated void layer 4, it is arranged on surface of the combined liquid-proof layer 3 away from substrate 1, the material of the reticulated void layer includes airsetting
Glue, the combined liquid-proof layer 3 can not be tightly connected with substrate 1, can also be tightly connected with substrate 1, Fig. 1 show combined liquid-proof layer 3 not with
The situation that substrate 1 connects；
First water accepting layer 5, is arranged on the surface of remote combined liquid-proof layer 3 of reticulated void layer 4, first water accepting layer 5 and base
Plate 1 is tightly connected, i.e. the first water accepting layer 5 and substrate 1 form one and be used to seal luminescent device 2 and combined liquid-proof layer 3, reticulated void layer
4 sealing space；
At least one layer of hermetic barrier layers 6, are tightly connected with substrate 1, also form a sealing space, the first water accepting layer 5, net
Shape void layer 4, combined liquid-proof layer 3 and luminescent device 2 are arranged in the sealing space that above-mentioned hermetic barrier layers 6 are formed.
" exposed surface " in above-described embodiment refers to the surface of no object attachment, for example, set combined liquid-proof layer 3 it
Before, the exposed surface of the luminescent device 2 on the surface of substrate 1, refer to luminescent device 2 in addition to the face contacted with substrate 1
Other surfaces.The first above-mentioned water accepting layer 5 is used to absorb steam, includes the absorption of physics mode and/or chemical mode, above-mentioned
At least one layer of hermetic barrier layers 6 are to be used to stop steam and/or oxygen, to reduce the harmful effect that it brings to luminescent device.
Using the application, by being respectively substrate, luminescent device, combined liquid-proof layer, reticulated void layer, the first water suction from bottom to up
The encapsulating structure of layer and hermetic barrier layers, luminescent device is sealed in the space between each layer and substrate, is hindered using sealing
Barrier isolates outer most steam, and its straight tackling steam effect is fine, and steam connecing from hermetic barrier layers and substrate
The probability that synapsis enters in sealing space is larger, because the first water accepting layer (part being connected with base plate seals) of side can be first
Absorb water saturation, and the vapour concentration of saturation part uprises, and high concentration steam can be to low concentration steam region (i.e. reticulated void layer and the
The central area of one water accepting layer) diffusion, and reticulated void layer has multiple-void structure, compared to easily expansion in the first water accepting layer
Dissipate, most of steam is diffused in reticulated void layer by lacunose passage, and due to central area the first water accepting layer compared with
To dry and having stronger Vapor adsorption power, steam enters the first of central area by interstitial channels under its sucking action
Water accepting layer, the steam in space is set to be inhaled into the first water accepting layer of central area, so as to realize guiding steam from the first water suction
The marginal position of layer enters the first water accepting layer of central area, steam is preferably absorbed by the first water accepting layer, compared to existing
There is the water accepting layer of actual only lateral location water sorption in encapsulating structure, improve the utilization rate of the first water accepting layer.By adopting
With above-mentioned technical proposal, solve the problems, such as sealing effectiveness difference of the encapsulating structure to steam of luminescent device in the prior art, it is real
Show the utilization rate for improving the first water accepting layer, effectively protect luminescent device from extraneous moisture attacks.
The set-up mode of above-mentioned reticulated void layer 4 can be a kind of to be arranged on combined liquid-proof layer 3 for as shown in Figure 1 including two kinds
Surface on without being tightly connected with substrate 1；Second for it is as shown in Figure 2 be arranged on the surface of combined liquid-proof layer 3 and with substrate 1
Face seal connects.There is preferably water suction and sealing compared to set-up mode as shown in Figure 1, such as set-up mode in Fig. 2
Effect, because in the sealing structure shown in Fig. 2, the water accepting layer 5 of reticulated void layer 4 and first is tightly connected with substrate 1 respectively, and
Sealing space is formed respectively,, can be preferably because the area coverage of reticulated void 4 is larger preferably to seal luminescent device 2
The effect of guiding steam is played, such as, after steam penetrates into, first absorbed by the first water accepting layer 5 of side, be not up in absorption
During saturation, steam in the case where being similarly positioned in the attraction of reticulated void layer 4 of side, will be directed to the center of the first water accepting layer
Position, further increasing the water-taking efficiency of the first water accepting layer, also improve the sealing effectiveness of encapsulating structure.
In above-mentioned encapsulating structure, combined liquid-proof layer 3 is primarily used for the film layer for stopping solvent when reticulated void layer 4 makes,
Because the material solution for forming the reticulated void layer 4 is made using sol-gel, obtained in sol-gel process
There are a large amount of solvents in material solution, there is a small amount of water inside these solvents, and steam can have certain infringement to luminescent device, therefore
Combined liquid-proof layer 3 is set between reticulated void layer 4 and luminescent device 2, to protect luminescent device 2 to be corroded from above-mentioned solvent.Form resistance
The raw material of liquid layer 3 can include nanometer particle ink, wherein, the solvent in the ink can be in alkane, alcohols and esters
One or more；Nano particle in nanometer particle ink can be selected from metal oxide, metal nitride, metal pentafluoride
One or more in thing, nonmetal oxide and non-metal nitride, wherein, metal oxide, metal nitride, metal fluorine
Compound, nonmetal oxide, non-metal nitride can be cupric oxide, magnesia, scandium oxide, the tantalum of non-oxidation two, titanium monoxide,
Titanium dioxide, yittrium oxide, zirconium oxide, titanium sesquioxide, aluminum oxide, silica, silicon nitride, aluminum oxynitride, silicon oxynitride and receive
One or more in rice ceramics or polymeric material are used in mixed way.It is preferred that the thickness of the combined liquid-proof layer 3 can 20~30nm it
Between.
Using the reticulated void layer of aerogel-congtg, on the one hand due to solvent can be made in its preparation process in reticulated void
Accomplish quick volatilization and noresidue, so as to which solvent will not be caused slowly to be permeated into device and then influence device performance；The opposing party
Face, the size and uniformity of reticulated void can be effectively controlled using aeroge, when flexible base board is bent, because space is uniform
Property it is good, because pore size is identical and identical, then other film layers for not easily leading to be covered in its surface the internal stress born occur
Cracking, so as to influence device lifetime.
Reticulated void layer 4 in above-mentioned encapsulating structure can be one pack system aeroge, or multicomponent aeroge, it is excellent
Form slection is selected from SiO into the raw material of one pack system aeroge2Nano particle, Al2O3Nano particle, V2O5Nano particle and TiO2Nanometer
One or more in grain, the raw material for forming multicomponent aeroge are selected from Al2O3/SiO2Nano particle, TiO2/SiO2Nanometer
Grain, Fe/SiO2Nano particle, Pt/TiO2Nano particle, (C60/C70)-SiO2Nano particle and CaO/MgO/SiO2Nano particle
In one or more.The reticulated void layer 4 has nanoscale reticulated void, and it is arranged on the thickness of reticulated void layer 4
Can be between 60nm~5um, the preferably thickness of reticulated void layer 4 is between 80nm~100nm, such aeroge manufacturing process
Solvent volatilization effect more preferably, the structure for forming reticulated void is evenly stablized, while ensure that steam is attracted to center
First water accepting layer in domain.
"/" in above-described embodiment is the meaning of sum, for example, Al2O3/SiO2Nano particle is Al2O3And SiO2Nanometer
Particle, especially, (C60/C70)-SiO2"/" in nano particle be or the meaning, (C60/C70)-SiO2Nano particle is
C60And SiO2Nano particle or C70And SiO2Nano particle, CaO/MgO/SiO2Nano particle is CaO, MgO and SiO2Nanometer
Particle.Namely aeroge is made by a kind of independent nano particle, or by a variety of nano particles as raw material making
Form.
By setting reticulated void layer 4, on the one hand (can enter being penetrated into from the external world from the contact zone of each layer and substrate
The probability entered is larger) steam attracted, and steam is guided from fringe region (i.e. above-mentioned contact zone) to central area, with more
Fully absorbed by the first water accepting layer well, in other words, the first water accepting layer is fully utilized, and improves the utilization of the first water accepting layer
Rate；On the other hand influence of the high heat during subsequent technique to luminescent device can be reduced, for example can avoid making extremely
Influence of the high heat to luminescent device caused by few one layer of hermetic barrier layers, also, because what reticulated void layer 4 also had receives
Meter level reticulated void structure, there is certain cushioning effect, therefore the reticulated void layer 4 can also be reduced caused by temperature change
Deformation.
In an optional embodiment, as depicted in figs. 1 and 2, the encapsulating structure also includes being arranged on reticulated void layer 4
Reticulated void in the first absorbent material 7, wherein, the absorbent material of the first water accepting layer 5 is the first absorbent material, and this first
Absorbent material is additionally arranged in the reticulated void of reticulated void layer 4, namely the first absorbent material 7 being arranged in reticulated void
The material of material and the first water accepting layer 5 is identical material.Above-mentioned " netted " refers to be crosslinked shape by chemical bond between compound
Into there is three-dimensional netted structure, above-mentioned reticulated void belongs to nano level reticulated void, preferably first water accepting layer 5
Thickness is between 1~15nm.
By above-described embodiment, rise water sorption in addition to the first water accepting layer 5, in addition to be arranged at reticulated void layer
The first absorbent material (being arranged on the first absorbent material 7 in reticulated void) in 4 reticulated void, the first absorbent material can
Enter reticulated void in a manner of by naturally osmotic or osmosis, because the first absorbent material easily reacts simultaneously after heated
Solidification, entering distribution situation of the first absorbent material 7 of reticulated void layer 4 in reticulated void layer 4 by penetration mode is：More
Away from combined liquid-proof layer 3, then the content of the first absorbent material 7 is more.As described above, the steam penetrated into from side is first by positioned at side
The first water accepting layer 5 and the first absorbent material 7 of reticulated void layer 4 of side absorb, in the first water accepting layer 5 of side and side
Reticulated void layer 4 the first absorbent material 7 close to after saturation, steam to more arid region spread, that is, pass through reticulated void
The gap structure guiding of the side of close combined liquid-proof layer 3 of layer 4, steam is then by the first water suction of the central area of reticulated void layer 4
Material 7 and the absorption of the first water accepting layer 5 of central area attract.Because the gap structure for being not provided with the first absorbent material 7 has
Channeling, steam, which enters in space, to be more easy to spread, and the first absorbent material 7 of the central area of reticulated void layer 4 and center
First water accepting layer 5 in region all has stronger water absorbing capacity steam, so as to guide steam after the entrance of side again toward away from resistance
The intermediate region diffusion of the water accepting layer 5 of reticulated void layer 4 and first in the direction of liquid layer 3；Wherein, absorbing includes the absorption of physics mode
And/or chemical mode absorbs.The absorbent material in the first water accepting layer is improved by the steam guiding function of reticulated void layer
Utilization rate, absorbed water rather than just by side；In addition, the first absorbent material 7 being arranged in reticulated void will can also be made
The steam come into during work in aeroge removes, and avoids it from causing damage luminescent device；Finally, positioned at reticulated void
The first absorbent material 7 in the reticulated void of layer 4 can additionally absorb water, and can improve total water absorption capacity of device, it is possible to reduce the
The thickness of one water accepting layer, so as to reduce the integral thickness of encapsulating structure.
The raw material of the absorbent material of formation first in above-described embodiment can include liquid desiccant, and the liquid drier is also
Property with thermal curable or photocuring, can should be containing aluminium base with the raw material of absorbent material in a preferable implementation
The hydrocarbon organic solvent of material, the hydrocarbon organic solvent for containing aluminium base can react and solidify being heated, become with bullet
The material of property.
In other optional embodiments, combined liquid-proof layer 3 in above-mentioned encapsulating structure can also be organic polymer layers and
The overlapping sandwich construction set of inorganic layer.Wherein, inorganic matter may include metal oxide, nonmetal oxide, nitride metal
Thing, non-metal nitride etc..
Above-mentioned first water accepting layer 5 can also be desiccants layer.At least one layer of hermetic barrier layers 6 can include being arranged on
On the outer surface of first water accepting layer 5 away from first water accepting layer 5 direction on, the silicon nitride layer that is cascading, silicon oxide layer,
Polymeric layer, silicon nitride layer, silicon oxide layer, UV glue-lines, in order to prevent the damage of film layer, UV glue-lines outer surface also sets up a floor height
Molecule aggregation material protective film.
Desiccants can be selected from the one or more in calcium, metal oxide, sulfate and organo metallic oxide.
By above-described embodiment, combined liquid-proof layer 3 can effectively stop that destruction when aerogel layer 4 makes to luminescent device 2 is made
With, and the first water accepting layer 5 formed by desiccants can effectively absorb the steam of extraneous entrance, be stacked silicon nitride
The sealing effectiveness for the hermetic barrier layers 6 that layer, silicon oxide layer, polymeric layer, silicon nitride layer, silicon oxide layer, UV glue-lines form is good.
In order to increase barrier properties of the encapsulating structure to steam, as shown in figure 3, above-mentioned encapsulating structure can also include
Second water accepting layer 8, second water accepting layer 8 can be arranged between the first water accepting layer 5 and hermetic barrier layers 6.It is optional at one
In embodiment, the absorbent material of second water accepting layer 8 can be the second absorbent material, second absorbent material can be selected from calcium,
One or more in metal oxide, sulfate and organo metallic oxide, the preferably thickness of second water accepting layer 8 10~
Between 50nm.By setting up the second water accepting layer so that encapsulating structure has two layers of water accepting layer, so as to will more thoroughly be invaded from the external world
The steam entered is removed, erosion of the significantly more efficient protection luminescent device from extraneous steam.
The second above-mentioned water accepting layer 8 can remove the water that infiltration is entered by the way of physics mode or chemical reaction
Vapour, when second water accepting layer 8 is when the steam that infiltration is entered is removed by the way of chemical reaction, due to second water accepting layer and the
One water accepting layer can act as the effect of water suction, so that the encapsulating structure can more thoroughly remove the water penetrated
Vapour, it is better protected luminescent device therein.Also, because reticulated void layer is arranged on the second water accepting layer and hair
, also can be by with the netted of nano-pore even if the second water accepting layer produces certain internal stress when reacting between optical device
Void layer buffering is fallen, so that luminescent device is protected from the influence of internal stress.
At least one layer of hermetic barrier layers 6 in encapsulating structure in above-described embodiment can be individual layer or alternating
The multilayer of setting, the material of at least one layer of hermetic barrier layers 6 can be the one or more in organic polymer and inorganic matter, its
In, inorganic matter includes metal oxide, nonmetal oxide, metal nitride, non-metal nitride etc., preferable at one
In embodiment, at least one layer of hermetic barrier layers 6 can be that multilayer is arranged alternately, and can utilize plasma thermal sprayed equipment will
The materials such as powdery thermoplastic polymer, metal oxide, nonmetal oxide, metal nitride, non-metal nitride heat
Superposition film layer is formed to plastic state or molten state and then alternating spray, namely forms at least one layer of hermetic barrier layers 6.
Thermoplastic of the melting range at 150 DEG C~230 DEG C can be selected from by being preferably formed as the material of hermetic barrier layers, tool
Body may be selected from the one or more in polyamide, polyurethane and polyethylene, and the material of the hermetic barrier layers is also selected from fusing point
300 DEG C~360 DEG C of thermoplastic, specifically can be selected from the one or more in polyphenylene sulfide and polyetheretherketonematerials materials, this
Kind material can improve the mechanically and chemically stability of encapsulating structure and the ability of anti-steam infiltration, more preferably hermetic barrier layers 6
Gross thickness between 0.2~0.3mm.In above-mentioned thermal spray process, thermoplastic fusing point is higher, and aeroge is netted
Void layer also has heat-blocking action, can reduce influence of the high heat to luminescent device, and reduces deformation caused by temperature change,
Reduce the influence of heat and thermal stress to luminescent device.
Encapsulating structure in the application is applicable not only to the encapsulation of luminescent device, is also applied for common non-flexible hair
The encapsulation of optical device.
By using the encapsulating structure in above-described embodiment, the utilization of the first water accepting layer and the first absorbent material can be improved
Rate, improve sealing effectiveness of the encapsulating structure to steam of luminescent device；Temperature can be reduced when preparing each film layer to photophore
The influence of part；And reduce the first water accepting layer and the second water accepting layer to break other film layers with internal stress caused by steam reaction
It is bad, and reduce the harmful effect of thermal stress caused by hermetic barrier layers making；Can also be by by the first absorbent material
The mode set is combined with reticulated void layer, improves the utilization rate of water accepting layer, and improve the life-span of luminescent device simultaneously.
The typical embodiment of another kind of the application provides a kind of method for packing, as shown in figure 4, the method for packing bag
Include following steps：
Step S1, luminescent device is set on a side surface of substrate；
Step S2, combined liquid-proof layer is set on the exposed surface of the remote substrate of luminescent device；
Step S3, aeroge raw material is set on the surface of the remote substrate of combined liquid-proof layer, to form reticulated void layer；
Step S4, the first water accepting layer is set on the surface of the remote combined liquid-proof layer of reticulated void layer, make the first water accepting layer with
Substrate surface is tightly connected；
Step S5, at least one is set on the exposed surface of the first water accepting layer, reticulated void layer, combined liquid-proof layer and luminescent device
Layer hermetic barrier layers, make hermetic barrier layers be connected with base plate seals.
Preferably, step S4 is to set the first water accepting layer on the exposed surface of the remote combined liquid-proof layer of reticulated void layer, this
Sample can be such that reticulated void layer and the first water accepting layer is connected respectively with base plate seals, so that preferably encapsulated electroluminescent device, is allowed to
The harmful effect to caused by device from the undesirable element in manufacturing process and external environment.
Using the application, by being respectively substrate, luminescent device, combined liquid-proof layer, reticulated void layer, the first water suction from bottom to up
The encapsulating structure of layer and hermetic barrier layers, luminescent device is sealed in the space between each layer and substrate, is hindered using sealing
Barrier isolates outer most steam, and its straight tackling steam effect is fine, and steam connecing from hermetic barrier layers and substrate
The probability that synapsis enters in sealing space is larger, because the first water accepting layer (part being connected with base plate seals) of side can be first
Absorb water saturation, and the vapour concentration of saturation part uprises, and high concentration steam can be to low concentration steam region (i.e. reticulated void layer and the
The central area of one water accepting layer) diffusion, and reticulated void layer has multiple-void structure, compared to easily expansion in the first water accepting layer
Dissipate, most of steam is diffused in reticulated void layer by lacunose passage, and due to central area the first water accepting layer compared with
To dry and having stronger Vapor adsorption power, steam enters the first of central area by interstitial channels under its sucking action
Water accepting layer, the steam in space is set to be inhaled into the first water accepting layer of central area, so as to realize guiding steam from the first water suction
The marginal position of layer enters the first water accepting layer of central area, steam is preferably absorbed by the first water accepting layer, compared to existing
There is the water accepting layer of actual only lateral location water sorption in encapsulating structure, improve the utilization rate of the first water accepting layer；Make gas
The process of gel, solvent on the one hand can be made to accomplish quick volatilization and noresidue in reticulated void, so as to which solvent will not be caused
Slowly permeated into device and then influence device performance；On the other hand, the big of reticulated void can effectively be controlled using aeroge
Small and uniformity, when flexible base board is bent, because space uniformity is good, the internal stress born because pore size is identical and phase
Together, then it is cracking to not easily lead to be covered in other film layers on its surface, so as to influence device lifetime.By using above-mentioned skill
Art scheme, solve the problems, such as sealing effectiveness difference of the encapsulating structure to steam of luminescent device in the prior art, realize raising
The utilization rate of first water accepting layer, effectively protect luminescent device from extraneous moisture attacks.
In an optional embodiment, above-mentioned steps S2 sets resistance on the exposed surface of the remote substrate of luminescent device
Liquid layer can include：Nanometer particle ink is set on the exposed surface of the remote substrate of luminescent device, formed after the drying pre-
Combined liquid-proof layer, flashing light sinter the combined liquid-proof layer that pre- combined liquid-proof layer forms densification.Nanometer particle ink can be arranged on the remote of luminescent device
On the electrode surface of substrate, for example it is arranged on the cathode surface of luminescent device, wherein, the mode of setting can select coating
Mode, after nanometer particle ink is set, nanometer particle ink heating, drying under vacuum conditions can be made its drying
Pre- combined liquid-proof layer is formed, then the pre- combined liquid-proof layer is sintered into the combined liquid-proof layer of densification by way of flashing light sintering.Wherein, the flashing light burns
The temperature of knot in the range of 25~60 DEG C, using flashing light sintering by the way of be sintered, can make the combined liquid-proof layer to be formed have compared with
Good compactness, and the cost of which is relatively low, utilizes large-scale production.
In other optional embodiments, above-mentioned steps S2 is set on the exposed surface of the remote substrate of luminescent device
Combined liquid-proof layer can include：Organic polymer layers and inorganic layer is set to overlap on the exposed surface of the remote substrate of luminescent device
The sandwich construction of setting, to form combined liquid-proof layer.
Combined liquid-proof layer in above-mentioned encapsulating structure can be organic polymer layers and the overlapping sandwich construction set of inorganic layer.
Above-mentioned first water accepting layer can be desiccants layer.At least one layer of hermetic barrier layers can include being arranged on outside the first water accepting layer
UV glue-lines on surface and the polymeric layer or glass cover for being arranged on above-mentioned UV glue-lines outer surface.
By above-described embodiment, using the blocking solution of substrate, luminescent device, organic polymer and inorganic matter formation sandwich construction
The first water accepting layer and UV glue-lines and outmost polymer or glass cover composition that layer, aerogel layer, desiccants are formed
Encapsulating structure, combined liquid-proof layer can effectively stop destruction to luminescent device when aerogel layer makes, and be done by solid-state
The first water accepting layer that drying prescription is formed can effectively absorb the steam of extraneous entrance, what UV glue cooperation polymeric layer or glass cover formed
The sealing effectiveness of hermetic barrier layers is good.
After pre- combined liquid-proof layer is prepared, except adopting in manner just described to its independent the first burning for carrying out flashing light sintering
Outside knot mode, second of sintering processing can also be used, can also be set on the exposed surface of the pre- combined liquid-proof layer away from substrate
The material solution to form aeroge is put, it is formed reticulated void layer after drying, then passes through the good netted sky of translucency again
Gap layer to carry out flashing light sintering to pre- combined liquid-proof layer above, the pre- combined liquid-proof layer is formed the combined liquid-proof layer of densification, with the first sintering
Mode is compared, and second of sintering processing can improve the adhesiveness between film layer.Wherein, flashing light sintering includes xenon lamp sintering, for example,
Above-mentioned pre- combined liquid-proof layer can be burnt by the reticulated void layer of printing opacity using the xenon lamp sintering technology in flashing light sintering
Knot.
Forming the material solution of aeroge can be prepared by sol-gel process, for example, sol-gel process can
First to form wet gel, such as alcogel or ketone gel by hydrolysis-condensation reaction under certain condition, and in the obtained airsetting
After the material solution of glue, above-mentioned steps S3 operation can be carried out.Aeroge is set on the surface of the remote substrate of combined liquid-proof layer
Raw material, such as, the material solution of aeroge can be fabricated to film layer of the thickness in 2~3um using printing device is coated with, with shape
Reticulate void layer.In an optional embodiment, above-mentioned steps S3 is set on the exposed surface of the remote substrate of combined liquid-proof layer
Reticulated void layer is put, may include steps of：Burin-in process first is carried out to the material solution for forming aeroge, obtains aeroge
Aged solution is (including alcohols, few there is a large amount of solvents around the alcogel solid-state skeleton obtained due to sol-gel process
Water and catalyst are measured, or including ketone, other solvents can also be included), therefore also aeroge aged solution is done
It is dry, remove solvent therein.Also aeroge can be set on the exposed surface of pre- combined liquid-proof layer or the remote substrate of combined liquid-proof layer
After aged solution, processing is dried to the aged solution, to remove solvent therein, then just forms pre- void layer；Should
Pre- void layer after flashing light sinters, forms the reticulated void layer of the reticulated void structure with nanoscale again.Below with assimilation
Exemplified by airsetting sol solution, the preparation process of reticulated void layer is introduced：First, it is molten in 8nm or so or lower silicon with colloidal particle size
Glue is silicon source, with volume ratio to form performed polymer Ludox and butanone mixture in the butanone of 5~50 times of Ludox, the two mixing
Ratio is 1：3, obtain the material solution of aeroge；Then, simultaneously aging formation in 3~15 days is wet for dehydrating gel under the conditions of 100 DEG C
Gel, due to easy cracking defect after the wet gel drying and forming-film, formamide need to be added in above-mentioned wet gel, both add
Ratio is 1：0.3, form aeroge aged solution；Secondly, aeroge aged solution is fabricated to thickness using printing device is coated with
Spend the film layer in 2~3um；Finally, using low zero boundary drying process, drying temperature is at 80~100 DEG C, preferably 85 DEG C, when drying
Between be 5min, cavity critical pressure is 3~5Mpa, preferably 3Mpa, so that processing is dried to aeroge aged solution, is formd
Pre- void layer, ultimately form reticulated void layer.
The above-mentioned technique that aeroge aged solution is dried can use low temperature process, general control 100 DEG C with
Under, can be 25~40 DEG C between, preferably 31 DEG C, can also control at 80~100 DEG C, preferably 85 DEG C；And general control ring
The pressure in border is between 5.2~8.5MPa, preferably 7.39MPa, will not be netted because above-mentioned drying process temperature is relatively low
The high temperature for being harmful to luminescent device is produced when prepared by void layer, it is achieved thereby that preparing net in the case where not damaging luminescent device
The effect of shape void layer.Preferably, in order to avoid the presence in the drying process because of gas-liquid interface surface tension can make gel
The appearance of volume Stepwize Shrink, the phenomenon to ftracture, the drying process of aeroge aged solution are selected supercritical drying process, that is, existed
Under hyperbaric environment, solvent therein alternately is eliminated with dried medium, air pressure and temperature in environment is exceeded dried medium
Critical point, gas-liquid interface are disappeared, and surface tension has not been existed, then discharge dried medium, and cooling is obtained with nanoscale net
The aeroge of shape gap structure, in a preferred embodiment, the critical-temperature can be used to be for 31.0 DEG C, critical pressure
Dried under 7.39MPa carbon dioxide environment to prepare reticulated void layer.
Step S4 in above-described embodiment sets the first water accepting layer can be with the side of the remote combined liquid-proof layer of reticulated void layer
Including：First absorbent material is set on the surface of the remote combined liquid-proof layer of reticulated void layer, the first water accepting layer is formed after heating, its
In, liquid desiccant can be included by forming the raw material of the first absorbent material, and the liquid desiccant has heat cure or photocuring
Property, the liquid desiccant include the hydrocarbon organic solvent containing aluminium base, this contain aluminium base hydrocarbon organic solvent can by
Solidified after heat, form flexible film layer, the heating-up temperature in preferably above-mentioned steps S4 may be selected between 60~80 DEG C.
In a preferred embodiment, spraying equipment can be utilized in above-mentioned steps S4, sprays one layer a small amount of first
Absorbent material causes there is the reticulated void that micro first absorbent material penetrates into reticulated void layer on reticulated void layer
In, then it is heated, so as to form first after the absorbent material of a part first solidification on reticulated void layer
Water accepting layer, the absorbent material of another part first solidification shape in the top reticulated void close to the first water accepting layer of reticulated void layer
Hydrating structure into inside gel heat-insulation layer, more down the in the lower web space away from the first water accepting layer of reticulated void layer
One absorbent material is fewer.
By above-described embodiment, rise water sorption in addition to the first water accepting layer, in addition to be arranged at reticulated void layer
Nanoscale reticulated void in the first absorbent material, so as to using aerogel layer form multiple netted narrow and small spaces, from side
The steam that face penetrates into first is absorbed by the first absorbent material of the first water accepting layer positioned at side and the reticulated void layer of side,
Side the first water accepting layer and side reticulated void layer the first absorbent material close to after saturation, steam is to more dry section
Domain is spread, i.e., is guided by the gap structure of the close combined liquid-proof layer side of reticulated void layer, steam is then by reticulated void layer
First absorbent material of central area and the first water accepting layer of central area attract.Due to being not provided with the sky of the first absorbent material
Gap structure has channeling, and steam, which enters in space, to be more easy to spread, and the first water-absorption material of the central area of reticulated void layer
Material and the first water accepting layer of central area all have stronger water absorbing capacity, so as to guide steam after the entrance of side again away from
The intermediate region diffusion of the reticulated void layer and the first water accepting layer in combined liquid-proof layer direction, wherein, absorbing includes physically and/or chemically side
The absorption of formula.The utilization rate of absorbent material in water accepting layer is improved by the steam guiding function of reticulated void layer, and
Not exclusively absorbed water by side；In addition, the first absorbent material 7 being arranged in reticulated void can also by manufacturing process
Steam through entering in aeroge removes, and avoids it from causing damage luminescent device；Finally, positioned at the netted of reticulated void layer 4
The first absorbent material in space can additionally absorb water, and can improve total water absorption capacity of device, it is possible to reduce the first water accepting layer
Thickness, so as to reduce the integral thickness of encapsulating structure.
By setting reticulated void layer 4, on the one hand will can be penetrated into from the external world (from the contact position area of each floor and substrate
The probability of entrance is larger) steam attracted, and guide steam from fringe region (i.e. above-mentioned contact zone) to central area, with
Preferably fully absorbed by the first water accepting layer, in other words, the first water accepting layer is fully utilized, and improves the profit of the first water accepting layer
With rate；On the other hand influence of the high heat during subsequent technique to luminescent device can be reduced, for example can avoid making
Influence of the high heat to luminescent device caused by least one layer of hermetic barrier layers, also, also have due to reticulated void layer 4
Nanoscale reticulated void structure, there is certain cushioning effect, therefore the reticulated void layer 4 can also reduce temperature change generation
Deformation.In further embodiments, the step S4 in above-described embodiment is set in the side of the remote combined liquid-proof layer of reticulated void layer
Putting the first water accepting layer can include：Desiccants are set on the surface of the remote combined liquid-proof layer of reticulated void layer, form first
Water accepting layer, can also so have good soaking effect.
After step S4 in the above-described embodiments, namely the side of the remote combined liquid-proof layer in reticulated void layer sets first
After water accepting layer, the method for packing can also comprise the following steps：Chemical gaseous phase is used on the exposed surface of the first water accepting layer
Sedimentation, vacuum vapour deposition or atomic layer deposition method set the second absorbent material, form the second water accepting layer, wherein, the second water suction
One or more of the material in calcium, metal oxide, sulfate and organo metallic oxide.Especially, metal oxide
Can be magnesia, calcium oxide, strontium oxide strontia, barium monoxide or aluminum oxide, sulfate can be magnesium sulfate, sodium sulphate or sulfuric acid
Nickel, and organo metallic oxide can be sad aluminum oxide, and those skilled in the art can inhale to second according to the actual requirements
Water material carries out reasonable selection.
The preparation temperature of the second above-mentioned water accepting layer changes according to different preparation methods, such as uses chemical vapor deposition
Temperature is typically more than 130 DEG C when method makes, using the making temperature of vacuum deposition method typically between 25~40 DEG C, and
The making temperature of ald typically between 60~100 DEG C, wherein, the system of vacuum deposition method and Atomic layer deposition method
Standby temperature is in the range of the tolerable temperature of luminescent device, and will not produce high temperature to luminescent device influences, chemical gaseous phase depositing process
Even if the second water accepting layer temperature prepared exceedes the tolerable temperature scope of luminescent device, its heat can also be hindered by reticulated void layer
Gear, will not also be impacted, the effect of the absorption steam of the second water accepting layer can include Physical Absorption and chemistry to luminescent device
Absorb.
Step S5 in above-described embodiment, in the exposed table of the first water accepting layer, reticulated void layer, combined liquid-proof layer and luminescent device
At least one layer of hermetic barrier layers are set on face, hermetic barrier layers is connected with base plate seals, thermal spraying apparatus can be utilized by powder
The materials such as last shape thermoplastic organic polymer, metal oxide, metal nitride thing, nonmetal oxide, non-metal nitride
It is heated to plastic state or molten state alternating spray forms superposition film layer, namely forms multi-layer sealed barrier layer, it is optional at one
In embodiment, it can use thermal spraying is standby low melting point polymer material powder is sprayed at into reticulated void layer surface, it is used for hot spraying
Low melting point thermoplastic mainly has polyamide, polyurethane, polyethylene, ethene etc., and material melting point scope is at 150 DEG C~230 DEG C.
High-melting-point, high-performance polymer are sprayed in low melting point polymer film surface, such as：PPS (polyphenylene sulfide) and PEEK (polyethers ethers
Ketone) material, this kind of material melting point is at a relatively high (up to 340 DEG C), and can significantly improve mechanically and chemically stability and anti-steam
Penetrating power, wherein, at least one layer of hermetic barrier layers are finally superimposed thickness can be in the range of 0.2~0.3mm.Above-mentioned heat
Spraying equipment can be selected from one kind in flame-spraying, plasma spraying and electric arc spraying.Equally, hermetic barrier layers technique is set
In heat can be stopped by reticulated void layer, so as to will not be adversely affected to luminescent device.
By using the method for packing in above-described embodiment, at least one layer of sealing resistance is made after reticulated void layer is made
Barrier, can be using the high heat during making on the heat-blocking action baffle seal barrier layer of reticulated void layer, so as to not damage device
In the case of part, the steam and oxygen in the external world have been effectively isolated.
The typical embodiment of another of the application provides a kind of optoelectronic device, and the optoelectronic device includes above-mentioned implementation
Encapsulating structure in example.
The optoelectronic device can be lighting apparatus or display device, be not limited to both equipment, ability at that time
Field technique personnel can apply above-mentioned encapsulating structure in suitable equipment according to actual conditions.
There is above-mentioned encapsulating structure so that optoelectronic device is not susceptible to the influence of steam, ensure that in the optoelectronic device
Photoelectric device has the longer life-span.
In order that the technical scheme of the application can clearly be understood by obtaining those skilled in the art, below with reference to
QLED (quanta point electroluminescent diode) method for packing illustrates with encapsulating structure specific embodiment.
Embodiment 1
Specific encapsulation process is in hundred grades of clean rooms.Specific method for packing includes：
First, prepare ITO (tin indium oxide) flexible base board, luminescent device, luminescent device are prepared on the ITO flexible base boards
Including prepare on ITO surfaces hole injection layer (material is poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid,
PEDOT：PSS), hole transmission layer (material is polyvinylcarbazole PVK) is prepared in hole injection layer upper surface, in hole transmission layer
Quantum dot light emitting layer (material is CdSe/ZnS core-shell quanta dots) on surface, and the electronics in quantum dot light emitting layer surface
Transport layer (ZnO nanoparticle), and negative electrode (material Ag) on the electron transport layer.
Then, it is coated with one on the cathode surface of luminescent device and on other surfaces for not contacted with substrate of luminescent device
Layer copper oxide nanometer particle ink, the solvent in the ink is eight alkane, under vacuum conditions after heating, drying, forms pre- blocking solution
Layer.
The alcosol of layer of silicon dioxide nano particle is coated with the pre- combined liquid-proof layer, its solvent is for ethylene glycol and on a small quantity
Water, burin-in process then is carried out to it, under the carbon dioxide environment that critical-temperature is 31.0 DEG C, critical pressure is 7.39MPa
Dry and prepare pre- void layer, reinstate to pre- void layer and pre- combined liquid-proof layer one above xenon lamp sintering, formed reticulated void layer and
Combined liquid-proof layer, the thickness of the two film layers is respectively 80nm and 25nm.
The hydrocarbon organic solvent containing aluminium base is sprayed on the reticulated void with nanoscale reticulated void with spraying equipment
On layer, hydrocarbon organic solvent of the part containing aluminium base is set to penetrate into the nanoscale reticulated void of the reticulated void layer, at 70 DEG C
Under conditions of toast after, the hydrocarbon organic solvent containing aluminium base on the surface of reticulated void layer is formed first by thermocoagulation
Water accepting layer, its thickness is 5nm, and hydrocarbon organic solvent of the part in nanoscale reticulated void containing aluminium base is also heated instead
Should after solidify.
Use one layer of magnesia film of vacuum evaporation on a side surface of the remote luminescent device of the first water accepting layer, form the
Two water accepting layers, its thickness are 30nm.
Finally, a strata acid amides is sprayed using plasma spraying equipment on above-mentioned each film layer exposed surface, then sprayed
One strata diphenyl sulfide, then the film layer of alternating spray above-mentioned two material, until gross thickness reaches 0.45mm, is formed at least one layer of
Hermetic barrier layers, obtain encapsulating structure.
Embodiment 2
Specific encapsulation process is in hundred grades of clean rooms.Specific method for packing includes：
First, prepare ITO flexible base boards, prepare luminescent device on the ITO flexible base boards, the step and above-described embodiment
1 is identical.
Then, pre- combined liquid-proof layer is formed, the step is identical with above-described embodiment 1；
One layer of assimilation airsetting sol solution is coated with the pre- combined liquid-proof layer, its solvent mainly includes butanone, is printed using coating
Assimilation aeroge is fabricated to by equipment, and then using low critical drying process, it is handled, and is 85 DEG C in drying temperature,
Critical pressure dries 5min to prepare pre- void layer in the environment of being 3Mpa, and pre- void layer and pre- combined liquid-proof layer one above are reinstated
Xenon lamp sinters, and forms reticulated void layer and combined liquid-proof layer, the thickness of two film layers is respectively 2 μm and 30nm.
Wherein, the specific preparation process of above-mentioned assimilation airsetting sol solution is：
Using colloidal particle size in 8nm or so or lower Ludox as silicon source, with volume ratio be 5~50 times of Ludox butanone
Mixing, the mixture of performed polymer Ludox and butanone is formed, the ratio of the two is 1 in mixture：3, it is dehydrated under the conditions of 100 DEG C
3~15 days formation wet gels of gel and aging, it is 1 that both formamide adding proportions are added in ketone gel：0.3 prevents from being dried to
Cracking defect after film, ultimately form assimilation airsetting sol solution.
First absorbent material and the first water accepting layer are set on reticulated void layer, and the step is identical with above-described embodiment 1.
The second water accepting layer is prepared on the first water accepting layer, the step is identical with above-described embodiment 1.
Finally, at least one layer of hermetic barrier layers are formed, the step is identical with above-described embodiment 1, obtains encapsulating structure.
As can be seen from the above description, the application the above embodiments realize following technique effect：
1), the encapsulating structure in the application, using from bottom to up be respectively substrate, luminescent device, combined liquid-proof layer, reticulated void
The encapsulating structure of layer, the first water accepting layer and hermetic barrier layers, luminescent device is sealed in the space between each layer and substrate,
Isolate outer most steam using hermetic barrier layers, further removed the steam penetrated by the first water accepting layer, and
And its straight tackling steam effect is fine, and the probability that steam enters in sealing space from the contact position of hermetic barrier layers and substrate
It is larger, because the first water accepting layer (part being connected with base plate seals) of side can first absorb water saturation, the steam of saturation part
Concentration uprises, and high concentration steam can expand to low concentration steam region (i.e. the central area of reticulated void layer and the first water accepting layer)
Dissipate, and reticulated void layer has multiple-void structure, compared to diffusion is easier in the first water accepting layer, most of steam passes through more spaces
Passage be diffused in reticulated void layer, and because the first water accepting layer of central area is more dried and is inhaled with stronger steam
Attached power, steam enters the first water accepting layer of central area by interstitial channels under its sucking action, makes the steam quilt in space
Suck in the first water accepting layer of central area, so as to realize that the marginal position of guiding steam from the first water accepting layer enters center
Domain, steam is preferably absorbed by the first water accepting layer, improve the utilization rate of the first water accepting layer；Reticulated void containing aeroge
Layer also has heat-blocking action, can reduce influence of the high heat during subsequent technique to luminescent device, and reduces temperature change
Deformation caused by change, so as to relative to using set in the prior art using the higher process of reaction temperature block water vapour layer come
Say, while encapsulating structure absorption steam efficiency is improved, reduce the influence of heat and thermal stress to luminescent device.Pass through
Using above-mentioned technical proposal, solve the problems, such as sealing effectiveness difference of the encapsulating structure to steam of luminescent device in the prior art,
The utilization rate for improving water accepting layer is realized, effectively luminescent device is protected from extraneous moisture attacks and reduces the bad of heat
The effect of influence.
2), the method for packing in the application, combined liquid-proof layer is first set on luminescent device before reticulated void layer is prepared, to protect
Hair care optical device is corroded by solvent in the raw material of aeroge, and passes through in the reticulated void layer and its reticulated void of setting
The first water accepting layer on first absorbent material, and reticulated void layer surface, it is possible to achieve heat-insulated and water suction double effectses, lead to
Cross and make at least one layer of hermetic barrier layers in the side of the remote luminescent device of reticulated void layer, reticulated void layer can be sealing
The heat on barrier layer isolates out, so as to which hermetic barrier layers can preferably play the effect of protection luminescent device.
3), there is above-mentioned encapsulating structure in the optoelectronic device of the application, optoelectronic device can be caused to be not susceptible to steam
Influence, ensure that optoelectronic device has the longer life-span.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (16)
1. a kind of encapsulating structure, it is characterised in that the encapsulating structure includes：
Substrate (1)；
Luminescent device (2), it is arranged on a side surface of institute's substrate (1)；
Combined liquid-proof layer (3), covering are arranged on the exposed surface of the luminescent device (2)；
Reticulated void layer (4), it is arranged on surface of the combined liquid-proof layer (3) away from the substrate (1), the reticulated void layer
Material includes aeroge；
First water accepting layer (5), it is arranged on the surface of the remote combined liquid-proof layer (3) of the reticulated void layer (4), and described
One water accepting layer (5) is tightly connected with the substrate (1)；
At least one layer of hermetic barrier layers (6), are connected with the base plate seals, to form a sealing space, first water accepting layer
(5), the reticulated void layer (4), the combined liquid-proof layer (3) and the luminescent device (2) are arranged in the sealing space.
2. encapsulating structure according to claim 1, it is characterised in that the reticulated void layer (4) and the substrate (1) are close
Envelope connection, to seal the luminescent device (2).
3. encapsulating structure according to claim 1, it is characterised in that the reticulated void layer (4) is one pack system aeroge
Or multicomponent aeroge, the raw material for being preferably formed as the one pack system aeroge are selected from SiO2Nano particle, Al2O3Nano particle,
V2O5Nano particle and TiO2One or more in nano particle, the raw material for forming the multicomponent aeroge are selected from Al2O3/
SiO2Nano particle, TiO2/SiO2Nano particle, Fe/SiO2Nano particle, Pt/TiO2Nano particle, (C60/C70)-SiO2Receive
Rice grain and CaO/MgO/SiO2One or more in nano particle.
4. encapsulating structure according to claim 1, it is characterised in that the thickness of the reticulated void layer (4) 60nm~
Between 5um.
5. encapsulating structure according to claim 1, it is characterised in that the absorbent material of first water accepting layer (5) is the
One absorbent material, first absorbent material are additionally arranged in the reticulated void of the reticulated void layer (4).
6. encapsulating structure according to claim 5, it is characterised in that forming the raw material of first absorbent material includes liquid
State drier, the liquid desiccant have the property of photocuring or heat cure.
7. encapsulating structure according to claim 1, it is characterised in that first water accepting layer (5) is desiccants layer.
8. encapsulating structure according to any one of claim 1 to 7, it is characterised in that the encapsulating structure also includes：
Second water accepting layer (8), it is arranged between first water accepting layer (5) and the hermetic barrier layers (6).
9. encapsulating structure according to claim 8, it is characterised in that the absorbent material of second water accepting layer (8) is the
Two absorbent materials, one kind in calcium, metal oxide, sulfate and organo metallic oxide of second absorbent material or
It is a variety of.
10. encapsulating structure according to claim 1, it is characterised in that forming the raw material of the combined liquid-proof layer (3) includes nanometer
Particle ink, the nano particle in the nanometer particle ink are selected from metal oxide, metal nitride, metal fluoride, non-
Metal oxide and the one or more in non-metal nitride；Or the combined liquid-proof layer (3) is organic polymer layers and inorganic
The overlapping sandwich construction set of nitride layer.
11. a kind of method for packing, it is characterised in that the method for packing comprises the following steps：
S1, luminescent device is set on a side surface of substrate；
S2, combined liquid-proof layer is set on the exposed surface of the remote substrate of the luminescent device；
S3, aeroge raw material is set on the surface of the remote substrate of the combined liquid-proof layer, to form reticulated void layer；
S4, the first water accepting layer is set on the surface of the remote combined liquid-proof layer of the reticulated void layer, makes first water suction
Layer is tightly connected with the substrate surface；
S5, set on the exposed surface of first water accepting layer, the reticulated void layer, the combined liquid-proof layer and the luminescent device
At least one layer of hermetic barrier layers are put, the hermetic barrier layers is connected with the base plate seals.
12. method for packing according to claim 11, it is characterised in that the step S2 includes：
Nanometer particle ink is set on the exposed surface of the remote substrate of the luminescent device, forms pre- resistance after the drying
Liquid layer, flashing light sinter the combined liquid-proof layer that the pre- combined liquid-proof layer forms densification；Or
Organic polymer layers and inorganic layer is set to overlap and set on the exposed surface of the remote substrate of the luminescent device
The sandwich construction put, to form the combined liquid-proof layer.
13. method for packing according to claim 12, it is characterised in that the step S3 includes：
Burin-in process is carried out to the material solution for forming aeroge, obtains aeroge aged solution；
Set the aeroge aging molten on the exposed surface of the pre- combined liquid-proof layer or the remote substrate of the combined liquid-proof layer
Liquid, reticulated void layer is formed after drying, the drying process of preferably described aeroge aged solution is supercritical drying process.
14. method for packing according to claim 11, it is characterised in that the step S4 includes：
The first absorbent material is set on the surface of the remote combined liquid-proof layer of the reticulated void layer, described is formed after heating
One water accepting layer, wherein, forming the raw material of the first absorbent material includes the hydrocarbon organic solvent containing aluminium base, preferably described heating temperature
Degree is between 60~80 DEG C；Or
Desiccants are set on the surface of the remote combined liquid-proof layer of the reticulated void layer, form first water suction
Layer.
15. method for packing according to claim 11, it is characterised in that after the step S4, the method for packing
Also include：
On the exposed surface of first water accepting layer, using chemical vapour deposition technique, vacuum vapour deposition or atomic layer deposition method
Second absorbent material is set, forms the second water accepting layer, wherein, second absorbent material is selected from calcium, metal oxide, sulfate
With the one or more in organo metallic oxide.
16. a kind of optoelectronic device, it is characterised in that including the encapsulating structure any one of claim 1 to 10.
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| CN108615819A (en) * | 2018-04-25 | 2018-10-02 | 云谷（固安）科技有限公司 | Display panel, display panel manufacturing method and display terminal |
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| US11088351B2 (en) | 2018-07-20 | 2021-08-10 | Yungu (Gu'an) Technology Co., Ltd. | Display panels and display devices |
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| CN111697153B (en) * | 2019-03-15 | 2023-03-03 | 纳晶科技股份有限公司 | Light emitting device |
| CN113261108A (en) * | 2019-03-29 | 2021-08-13 | 深圳市柔宇科技股份有限公司 | Manufacturing method of flexible electronic device and flexible electronic device |
| CN111312931A (en) * | 2020-04-08 | 2020-06-19 | Tcl华星光电技术有限公司 | Packaging structure, packaging structure manufacturing method and display panel |
| CN111312931B (en) * | 2020-04-08 | 2022-07-26 | Tcl华星光电技术有限公司 | Packaging structure, packaging structure manufacturing method and display panel |
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| Publication number | Publication date |
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| CN107819081B (en) | 2020-09-08 |
| CN106449553A (en) | 2017-02-22 |
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