CN107809221B - 一种空腔型薄膜体声波谐振器及其制备方法 - Google Patents
一种空腔型薄膜体声波谐振器及其制备方法 Download PDFInfo
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- CN107809221B CN107809221B CN201710895254.8A CN201710895254A CN107809221B CN 107809221 B CN107809221 B CN 107809221B CN 201710895254 A CN201710895254 A CN 201710895254A CN 107809221 B CN107809221 B CN 107809221B
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
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Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109150127B (zh) * | 2018-07-27 | 2022-10-28 | 开元通信技术(厦门)有限公司 | 薄膜体声波谐振器及其制作方法、滤波器 |
CN109302158B (zh) * | 2018-08-01 | 2021-07-16 | 广州市艾佛光通科技有限公司 | 一种薄膜体声波谐振器及其制备方法 |
CN109309483B (zh) * | 2018-10-10 | 2022-03-25 | 华南理工大学 | 一种支撑型薄膜体声波谐振器的制备方法 |
CN109378560B (zh) * | 2018-10-10 | 2020-06-05 | 北京航天微电科技有限公司 | 一种硅基腔体屏蔽滤波器 |
CN109672419A (zh) * | 2018-11-01 | 2019-04-23 | 中国科学院半导体研究所 | 一种体声波谐振器的结构及其制备方法 |
CN111342799B (zh) * | 2018-12-18 | 2023-12-15 | 天津大学 | 具有扩大的释放通道的体声波谐振器、滤波器、电子设备 |
CN109831173B (zh) * | 2018-12-26 | 2023-09-05 | 天津大学 | 单晶压电薄膜体声波谐振器及其形成方法 |
CN109995340B (zh) * | 2019-03-13 | 2022-03-15 | 电子科技大学 | 一种空腔型体声波谐振器及其制备方法 |
CN109981070B (zh) * | 2019-03-13 | 2020-06-16 | 电子科技大学 | 一种无需制备牺牲层的空腔型体声波谐振器及其制备方法 |
CN110011631B (zh) * | 2019-03-13 | 2022-05-03 | 电子科技大学 | 具有应力缓冲层的空腔型体声波谐振器及其制备方法 |
CN110061715B (zh) * | 2019-03-29 | 2020-07-07 | 山东科技大学 | 一种在非硅基底上制造压电薄膜谐振器的方法 |
CN112039460B (zh) | 2019-07-19 | 2022-05-10 | 中芯集成电路(宁波)有限公司 | 薄膜体声波谐振器及其制作方法 |
CN112039475A (zh) * | 2019-07-19 | 2020-12-04 | 中芯集成电路(宁波)有限公司 | 薄膜体声波谐振器及其制造方法和滤波器、射频通信*** |
EP4027515A4 (en) * | 2019-09-05 | 2023-06-14 | Changzhou Chemsemi Co., Ltd. | METHOD OF FORMING A BULKY ACOUSTIC WAVE RESONANCE DEVICE |
CN112039483A (zh) * | 2020-03-23 | 2020-12-04 | 中芯集成电路(宁波)有限公司 | 一种薄膜体声波谐振器 |
CN112039477B (zh) * | 2020-03-23 | 2024-06-25 | 中芯集成电路(宁波)有限公司 | 一种薄膜体声波谐振器及其制造方法 |
CN113497594B (zh) * | 2020-04-08 | 2023-10-24 | 诺思(天津)微***有限责任公司 | 单晶体声波谐振器及其制造方法、滤波器及电子设备 |
CN112039467B (zh) * | 2020-06-16 | 2024-07-02 | 中芯集成电路(宁波)有限公司上海分公司 | 一种薄膜体声波谐振器及其制造方法 |
CN112039469B (zh) * | 2020-06-16 | 2024-07-02 | 中芯集成电路(宁波)有限公司上海分公司 | 一种薄膜体声波谐振器的制造方法 |
CN114061740B (zh) * | 2020-07-31 | 2024-04-30 | 中芯集成电路(宁波)有限公司 | 一种超声波传感器及其制造方法 |
CN116545402A (zh) * | 2023-07-06 | 2023-08-04 | 广州市艾佛光通科技有限公司 | 一种薄膜体声波谐振器及其制备方法 |
Citations (4)
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KR20020089270A (ko) * | 2002-11-04 | 2002-11-29 | 주식회사 에이엔티 | 레이저 광선을 이용한 fbar의 공진주파수 튜닝 방법 |
CN1751435A (zh) * | 2003-02-22 | 2006-03-22 | 麦姆斯解决方案有限公司 | Fbar带通滤波器和具有该滤波器的双工器及其制造方法 |
CN101977026A (zh) * | 2010-11-01 | 2011-02-16 | 中国电子科技集团公司第二十六研究所 | 一种空腔型薄膜体声波谐振器(fbar)的制作方法 |
CN104767500A (zh) * | 2014-01-03 | 2015-07-08 | 李国强 | 空腔型薄膜体声波谐振器及其制备方法 |
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TWI242883B (en) * | 2001-06-28 | 2005-11-01 | Winbond Electronics Corp | Manufacturing process of high-frequency thin-film bulk acoustic wave filter and apparatus thereof |
US6662419B2 (en) * | 2001-12-17 | 2003-12-16 | Intel Corporation | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
CN106100601A (zh) * | 2016-05-31 | 2016-11-09 | 中电科技德清华莹电子有限公司 | 一种采用超薄压电单晶体制作的薄膜体声波谐振器 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20020089270A (ko) * | 2002-11-04 | 2002-11-29 | 주식회사 에이엔티 | 레이저 광선을 이용한 fbar의 공진주파수 튜닝 방법 |
CN1751435A (zh) * | 2003-02-22 | 2006-03-22 | 麦姆斯解决方案有限公司 | Fbar带通滤波器和具有该滤波器的双工器及其制造方法 |
CN101977026A (zh) * | 2010-11-01 | 2011-02-16 | 中国电子科技集团公司第二十六研究所 | 一种空腔型薄膜体声波谐振器(fbar)的制作方法 |
CN104767500A (zh) * | 2014-01-03 | 2015-07-08 | 李国强 | 空腔型薄膜体声波谐振器及其制备方法 |
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