CN107799440B - 用于处理基板的装置和方法 - Google Patents
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Abstract
本发明涉及用于处理基板的装置和方法。该方法包括在供给处理液的同时以第一速度和第二速度交替地重复旋转基板,其中,第二速度高于第一速度。
Description
技术领域
本文描述的本发明构思的实施方式涉及用于处理基板的装置和方法。
背景技术
半导体器件的制造要进行各种工艺,例如清洁、沉积、光刻、蚀刻和离子注入。在这些工艺当中,使用沉积和旋涂硬(SOH)掩模(以下称为涂覆)工艺作为在基板上形成膜的工艺。此外,蚀刻工艺包括在真空状态下使用等离子体的干式蚀刻方法和在常压状态下使用液体化学品的湿式蚀刻方法。
通常,沉积工艺是通过在基板上沉积工艺气体而在基板上形成膜的工艺,涂覆工艺是通过将处理液供给到基板的中心而形成液体膜的工艺。
通常通过将处理液供给到以特定速度旋转的基板来进行处理液供给工艺,例如涂覆工艺或湿法蚀刻工艺。在这种情况下,为了将处理液涂覆在基板的整个表面上并提供足够的处理速度,提供特定量以上的处理液。
发明内容
本发明构思的实施方式提供了一种提高处理效率的装置和方法。
本发明构思的实施方式还提供了用于减少所使用的处理液量的装置和方法。
本发明构思的目的不限于上述目的。本发明概念所属领域的技术人员将从下面的描述中清楚地了解未提及的其它技术目的。
本发明构思提供了一种通过将处理液供给到基板上来处理基板的方法。所述方法可以包括:在供给所述处理液的同时以第一速度和第二速度交替地重复旋转所述基板,其中所述第二速度可以高于所述第一速度。
可以将基板的旋转速度在第一速度和第二速度之间改变两次以上。
基板的初始旋转速度是第一速度或第二速度。
在将基板的旋转速度在第一速度和第二速度之间改变时,所述基板的旋转加速度可以是恒定的或变化的。
第一速度可以是100rpm以下,并且第二速度可以是1000rpm以上。
第一速度可以是0rpm。
处理液可以是用于蚀刻涂覆在基板上的膜的化学品。
处理液可以包括稀释剂。
供给处理液的时间段可以是100秒以下。
与此不同的是,用于处理基板的方法可以包括:第一涂覆工艺,其在第一室中通过将第一涂覆液提供到具有图案的基板上而形成第一涂层,蚀刻工艺,其通过将化学品供给到基板上而去除位于图案的上表面上的第一涂层,使得图案的上表面暴露;以及第二涂覆工艺,其在第二室中通过将第二涂覆液供给到具有图案的基板上而形成第二涂层,其中可以依次执行所述第一涂覆工艺、所述蚀刻工艺和所述第二涂覆工艺,在蚀刻工艺中,可以在供给所述化学品的同时,以第一速度和第二速度交替地重复旋转所述基板,并且第二速度可以高于第一速度。
可以将基板的旋转速度在第一速度和第二速度之间改变两次以上。
基板的初始旋转速度可以是第一速度或第二速度。
在将基板的旋转速度在第一速度和第二速度之间改变时,所述基板的旋转加速度可以是恒定的或变化的。
可以在第一室或第二室中的一者中进行蚀刻工艺。
此外,本发明构思提供了一种基板处理装置。基板处理装置可以包括:基板支撑构件,其支撑基板;旋转驱动构件,其被配置为旋转基板支撑构件;液体供给单元,其被配置为将处理液供给到由基板支撑构件支撑的基板上;和控制器,其被配置为控制旋转驱动构件和液体供给单元,控制器可以控制旋转驱动构件和液体供给单元,使得在供给处理液的同时以第一速度和第二速度交替地重复旋转基板;并且第二速度高于第一速度。
控制器可以控制旋转驱动构件,使得将基板的旋转速度在第一速度和第二速度之间改变两次以上。
控制器可以控制旋转驱动构件,使得基板的初始旋转速度是第一速度或第二速度。
控制器可以控制旋转驱动构件,使得在将基板的旋转速度在第一速度和第二速度之间改变时基板的旋转加速度是恒定或变化的。
第一速度可以是100rpm以下,第二速度可以是1000rpm以上。
处理液可以是用于蚀刻涂覆在基板上的膜的化学品。
处理液可以包括稀释剂。
液体供给单元可以包括涂覆单元,其被配置为将涂覆液供给到具有图案的基板上。
附图说明
根据以下参考附图的描述,上述和其它目的和特征将变得显而易见,其中,除非另有说明,在所有各个附图中相同的附图标记表示相同的部件,并且其中:
图1是示出根据本发明构思的实施方式的基板处理***的截面图。
图2是将图1的基板处理***沿图1的线A-A截取的截面图;
图3是从正面看的图1的液体处理室的截面图;
图4是图3的液体处理室的平面图;
图5是示出图1的烘焙室的立体图;
图6是示出图5的烘焙室的俯视图;
图7是示出图5的烘焙室的截面图;
图8是示出根据本发明构思的实施方式的基板处理方法的流程图;
图9至图11是示出在其上进行了图8的第一涂覆工艺、蚀刻工艺和第二涂覆工艺的基板的截面图;和
图12和图13是示出根据本发明构思的实施方式的旋转卡盘的旋转速度的曲线图。
具体实施方式
在下文中,将参考附图更详细地描述本发明构思的示例性实施方式。可以以各种形式对本发明构思的实施方式进行修改,并且本发明构思的范围不应被解释为限于以下实施方式。提供本发明构思的实施方式用以向本领域技术人员更完整地描述本发明构思。因此,附图的部件的形状被夸大以突显其更清楚的描述。
本实施方式的***用于通过将处理液供给到诸如半导体晶片或平板显示面板等的基板来进行形成液膜的工艺。特别地,本实施方式的***用于通过旋转基板并将处理液供给到基板的中心来进行形成液体的工艺。在下文中,将例示使用晶片作为基板。然而,除了半导体晶片之外,基板可以是各种类型的基板,例如平板显示面板和光掩模。与此不同,根据本发明构思的实施方式的基板处理装置可以应用于通过向基板供给液体来处理基板的多种***。
图1是示出根据本发明构思的实施方式的基板处理***的平面图。图2是将图1的基板处理***沿图1的线A-A截取的截面图。参考图1和图2,基板处理***1包括转位模块10、工艺执行模块20和控制器30。转位模块10包括多个负载端口120和进料框架140。负载端口120、进料框架140和工艺执行模块20可以依次布置成行。在下文中,将负载端口120、进料框架140和工艺执行模块20的布置方向称为第一方向12,将当俯视时与第一方向12垂直的方向称为第二方向14,将与包含第一方向12和第二方向14的平面垂直的方向称为第三方向16。
设置于容纳基板W的容器中的载体18位于负载端口120上。设置有多个负载端口120,并且其沿第二方向14布置成行。然而,负载端口120的数量可以根据诸如工艺执行模块20的工艺效率或占用空间的状况而增加或减少。在载体18中形成有用于在基板W平行于地面布置时容纳基板W的多个槽(未示出)。前端开启式晶圆传送盒(Front Opening UnifiedPod,FOUP)可被用作载体18。
工艺执行模块20包括缓冲单元220、传送室240和多个处理室260和280。处理室包括液体处理室260和烘焙室280。传送室240布置成使得其长度方向与第一方向12平行。液体处理室260布置在传送室240的一侧,烘焙室280布置在传送室240的另一侧。液体处理室260和烘焙室280可以设置成相对于传送室240彼此对称。多个液体处理室260设置在传送室240的一侧。一些液体处理室260沿传送室240的长度方向布置。此外,一些液体处理室260布置成彼此堆叠。也就是说,具有A×B阵列的液体处理室260可以布置在传送室240的一侧。这里,A是沿第一方向12成行设置的液体处理室260的数量,B是沿第三方向16成行设置的液体处理室260的数量。当在传送室240的一侧设置有四个或六个液体处理室260时,液体处理室260可以布置成2×2阵列或3×2阵列。液体处理室260的数量可以增加或减少。
根据实施方式,液体处理室260包括第一室260a和第二室260b。在这种情况下,多个第一室和多个第二室260b可以沿第一方向12布置。第一室260a和第二室260b可以彼此堆叠,并且第一室260a可以设置在第二室260b上。与此不同,选择性地,第二室260b可以设置在第一室260a上。
与此不同,液体处理室260可以设置在传送室240的一侧或相反两侧以形成单层。在这种情况下,第一室260a和第二室260b可以设置在相同的高度。
多个烘焙室280设置在传送室240的另一侧。烘焙室280的数量可以大于液体处理室260的数量。一些烘焙室280沿传送室240的长度方向布置。此外,一些烘焙室280布置成彼此堆叠。也就是说,具有C×D阵列的烘焙室280可以布置在传送室240的另一侧。这里,C是沿第一方向12成行设置的烘焙室280的数量,D是沿第三方向16成行设置的烘焙室280的数量。当在传送室240的另一侧设置有四个或六个烘焙室280时,烘焙室280可以设置成2×2阵列或3×2阵列。烘焙室280的数量可以增加或减少。根据实施方式,当如图1和图2所示设置第一室260a和第二室260b时,一些烘焙室280从第一室260a沿第二方向定位并且沿第一方向布置。其他烘焙室280从第二室260b沿第二方向定位并且沿第一方向布置。因此,传送室240位于一些烘焙室280和第一室260a之间以及其他烘焙室280和第二室260b之间。与此不同,烘焙室280可以设置成单层。
缓冲单元220布置在进料框架140和传送室240之间。缓冲单元220在传送室240和进料框架140之间提供基板W在被传送之前停留的空间。在缓冲单元220的内部设置有多个放置基板W的槽(未示出)。多个槽(未示出)可以被设置成沿第三方向16彼此间隔开。缓冲单元220的面对进料框架140的面和缓冲单元220的面对传送室240的面是敞开的。
转位轨道142和转位机械手144设置在进料框架140中。转位轨道142被布置成使得其长度方向与第二方向14平行。转位机械手144在位于负载端口120上的载体18和缓冲单元220之间传送基板W。转位机械手144安装在转位轨道142上,沿转位轨道142沿第二方向14线性移动。转位机械手144具有基座144a、主体144b和多个转位臂144c。基座144a被安装成沿转位轨道142移动。主体144b联接到基座144a。主体144b被设置成沿第三方向16在基座144a上移动。主体144b被设置成在基座144a上旋转。转位臂144c联接到主体144b,并且被设置成相对于主体144b前后移动。多个转位臂144c被设置成被单独驱动。转位臂144c布置成以沿第三方向16彼此间隔开的方式堆叠。当基板W被输送到工艺模块20中的载体18时,使用一些转位臂144c;当基板W被从载体18输送到工艺执行模块20时,可以使用一些转位臂144c。这种结构可以防止在由转位机械手144载入和载出基板W的过程中在工艺处理之前产生自基板W的颗粒在工艺处理之后附着到基板W上。
在传送室240中设置有导轨242和主机械手244。主机械手244在缓冲单元220、第一室260a、第二室260b和烘焙室280中的任何两个之间传送基板W。导轨242布置成使其长度方向平行于第一方向12。主机械手244安装在导轨242上,并且沿第一方向12在导轨242上线性移动。主机械手244具有基座244a、主体244b和多个主臂244c。基座244a被安装成沿导轨242移动。主体244b联接到基座244a。主体244b被设置成沿第三方向16在基座244a上移动。主体244b被设置成在基座244a上旋转。主臂244c联接到主体244b,并且被设置成相对于主体244b前后移动。多个主臂244c被设置成被单独驱动。主臂244c被布置成以沿第三方向16彼此间隔开的方式堆叠。
在液体处理室260中进行在基板W上形成膜的成膜工艺。一些液体处理室260可以具有相同的结构和构造。然而,根据成膜工艺的类型,液体处理室260可以具有不同的结构。选择性地,液体处理室260可以被分类为多个组,并且属于同一组的液体处理室260的构造和结构可以相同,而属于不同组的液体处理室260的构造结和结构可以不同。
根据实施方式,第一室260a执行第一涂覆工艺S10。第一涂覆工艺S10是通过将第一涂覆液供给到具有图案13的基板W上而形成第一涂层15的工艺。第二室260b进行第二涂覆工艺S40。第二涂覆工艺S40是通过将第二涂覆液供给到具有图案13的基板W上来形成第二涂层17的工艺。例如,第一涂覆液和第二涂覆液可以是感光性液体或例如光刻胶(PR)的旋涂硬掩膜液体。第一涂覆液和第二涂覆液可以是具有不同组成和/或组成比的光刻胶液体。此外,第一涂覆液和第二涂覆液可以是具有不同组成和/或组成比的旋涂硬掩模液体。
在第一室260a和第二室260b之一中进行蚀刻工艺S30。蚀刻工艺S30是通过向已对其进行了第一涂覆工艺S10的基板W供给化学品来去除位于图案13的上表面上的第一涂层15的工艺,使得图案13的上表面暴露。例如,化学品可以是稀释剂(thinner)。与此不同,化学品可以是可以蚀刻第一涂层15和第二涂层17的各种类型的流体。
第一涂覆工艺S10、第二涂覆工艺S40和蚀刻工艺S30可以在常压下进行。可以在基板W旋转的同时通过将第一涂覆液、第二涂覆液或化学品供给到基板W来进行第一涂覆工艺S10、第二涂覆工艺S40和蚀刻工艺S30。
将参考图8至图13来描述各工艺的细节以及本发明构思的基板处理方法。
图3是从正面看时图1的液体处理室260的截面图。图4是图3的液体处理室260的平面图。图1的液体处理室260可以包括第一室260a和第二室260b。第一室260a和第二室260b的构造和结构可以是相同的,除了从涂覆单元供给的涂覆液的类型和存在蚀刻单元940之外。参考图3和图4,液体处理室260包括壳体810、气流供给单元820、基板支撑单元830、处理容器850、升降单元890、涂覆单元920和蚀刻单元940。
壳体810具有矩形桶形状,在其内部具有空间812。在壳体810的一侧形成有开口(未示出)。该开口用作供基板W载入和载出的端口。开口中安装有门,门打开和关闭开口。如果进行基板处理工艺,则门遮住开口并关闭壳体810的内部空间812。在壳体810的下表面上形成有内出口814和外出口816。壳体810中的空气通过内出口814和外出口816被排出到外部。根据示例,提供用于处理容器850的空气可以通过内出口814排出,提供用于处理容器850外部的空气可以通过外出口816排出。
气流供给单元820在壳体810的内部空间中形成下行的气流。气流供给单元820包括气流供给管线822、风扇824和过滤器826。气流供给管线822连接到壳体810。气流供给管线822将外部空气供给到壳体810中。过滤器826过滤从气流供给管线822供给的空气。过滤器826去除了在空气中包含的杂质。风扇824安装在壳体810的上表面上。风扇824位于壳体810的上表面的中心区域处。风扇824在壳体810的内部空间中形成下行气流。如果空气从气流供给管线822供给到风扇824,则风扇824向下供给空气。
基板支撑单元830在壳体810的内部空间中支撑基板W。基板支撑单元830旋转基板W。基板支撑单元830包括旋转卡盘832以及旋转驱动构件834和836。旋转卡盘832设置用作基板支撑构件。旋转卡盘832具有圆盘形状。基板W与旋转卡盘832的上表面接触。旋转卡盘832的直径小于基板W的直径。根据示例,旋转卡盘832可以真空吸附基板W并夹持基板W。可选地,旋转卡盘832可以设置用作通过使用静电夹持基板W的静电卡盘。旋转卡盘832可以通过物理力夹持基板W。
旋转驱动构件834和836包括旋转轴834和驱动器836。旋转轴834在旋转卡盘832的下方支撑旋转卡盘832。旋转轴834被设置成使其长度方向面对上侧和下侧。旋转轴834被设置成能够围绕其中心轴线旋转。驱动器836提供驱动力使得旋转轴834旋转。例如,驱动器836可以是改变旋转轴的旋转速度的马达。
处理容器850位于壳体810的内部空间812中。处理容器850在其内部具有处理空间。处理容器850具有开顶型杯形状。处理容器850包括内杯状部852和外杯状部862。
内杯状部852具有围绕旋转轴834的圆盘形状。当俯视时,内杯状部852放置成与内出口814重叠。内杯状部852的上表面被设置成使得当俯视时,其外部区域和内部区域具有不同的角度。根据示例,内杯状部852的外部区域随着其远离基板支撑单元830而向下倾斜,并且内杯状部852的内部区域随着其远离基板支撑单元830而向上倾斜。内杯状部852的外部区域和内部区域相交的点被设置成与基板W的侧端垂直对应。内杯状部852的上表面的外部区域是圆形的。内杯状部852的上表面的外部区域是凹形的。内杯状部852的上表面的外部区域可以设置为用于供给自涂覆单元920的涂覆液和供给自蚀刻单元940的处理液例如化学品流入的区域。
外杯状部862具有围绕基板支撑单元830和内杯状部852的杯形。外杯状部862具有底壁864、侧壁866、上壁、和倾斜壁870。底壁864具有中空的圆盘形状。在底壁864中形成有回收管线865。回收管线865回收供给到基板W上的处理液。由回收管线865回收的处理液可以被外部液体回收***再利用。侧壁866具有围绕基板支撑单元830的圆形桶形状。侧壁866沿垂直于底壁864的方向从底壁864的侧端延伸。侧壁866从底壁864向上延伸。
倾斜壁870从侧壁866的上端朝向外杯状部862的内部延伸。倾斜壁870被设置成随着其向上变得更闭合。倾斜壁870具有环形。倾斜壁870的上端高于由基板支撑单元830支撑的基板W。
升降单元890将内杯状部852和外杯状部862升降。升降单元890包括内部可移动构件892和外部可移动构件894。内部可移动构件892将内杯状部852升降,外部可移动构件894将外杯状部862升降。
涂覆单元920进行形成薄膜的涂覆工艺。这里,薄膜设置为由液体形成的液膜。涂覆单元920将涂覆液供给到基板W。当图3的处理室是第一室260a时,涂覆单元920设置为第一涂覆单元920a。与此不同,当图3的处理室3是第二室260b时,涂覆单元920设置为第二涂覆单元920b。第一涂覆单元920a通过将第一涂覆液供给到基板W上来进行第一涂覆工艺S10。第二涂覆单元920b通过将第二涂覆液供给到基板W上进行第二涂覆工艺S40。涂覆单元920包括引导构件922、臂924和涂覆喷嘴926。引导构件922和臂924将涂覆喷嘴926移动到处理位置和备用位置。这里,处理位置是涂覆喷嘴926的排出端面对基板W的中心的位置,备用位置被定义为偏离处理位置的位置。引导构件922包括水平地移动臂922的导轨924。导轨924位于处理容器850的一侧。导轨924被设置成使得其长度方向是水平的。根据示例,导轨924的长度方向可以沿平行于第一方向12的方向。臂922安装在导轨924中。臂924可以由设置在导轨924内部的线性马达来移动。当俯视时,臂924可以朝向垂直于导轨924的长度方向。臂924的一端安装在导轨924上。涂覆喷嘴926安装在臂924的相反端的底表面上。选择性地,臂924可以联接到长度方向朝向第三方向16的旋转轴834,以被旋转。
蚀刻单元940被设置为液体供给单元,其被配置为通过向基板W提供化学品来进行蚀刻工艺。蚀刻单元940包括引导构件942、臂944和化学品喷嘴946。蚀刻单元940的引导构件942和臂944与涂覆单元920的引导构件922和臂924具有相同的形状。可以独立于涂覆单元920驱动蚀刻单元940的引导构件942和臂944。因此,将省略对蚀刻单元940的引导构件942和臂944的详细描述。化学品喷嘴946将化学品排放到基板W上。化学品喷嘴946与臂944的底表面固定联接。涂覆单元920、蚀刻单元940和旋转驱动构件834和836由控制器30控制。蚀刻单元940可以设置于第一室260a和第二室260b中的一者中。
烘焙室280具有相同的结构。此外,烘焙室280可以根据成膜工艺的类型或由于室810的高度差而导致的排放量差异而具有不同的结构。选择性地,烘焙室280可以被分为多个组,并且设置于属于同一组的烘焙室280的基板处理装置可以相同,设置于属于不同组的烘焙室280的基板处理装置可以不同。
烘焙室280进行将基板W加热到特定温度的热处理工艺,并且可以在热处理工艺之后进行冷却基板W的冷却工艺。
图5是示出图1的烘焙室280的立体图。图6是示出图5的烘焙室280的平面图。图7是示出图5的烘焙室280的截面图。参考图5至图7,烘焙室280包括壳体1100、传送单元1200、加热单元1300和冷却单元1400。
壳体1100在其内部提供处理空间,使得例如进行烘焙处理。壳体1100具有长方体形状。壳体1100包括第一侧壁1111、第二侧壁1112、第三侧壁1113和第四侧壁1114。
第一侧壁1111设置在壳体1100的一个侧表面上。第一侧壁1111具有入口1116,供基板W引入和排出。入口1116提供使基板W移动通过的通道。
第二侧壁1112形成在第一侧壁1111的相反侧上。第二侧壁1112设置成与第一侧壁1111平行。第三侧壁1113设置在第一侧壁1111和第二侧壁1112之间。第三侧壁1113设置成垂直于第一侧壁1111和第二侧壁1112。第四侧壁1114设置在第一侧壁1111和第二侧壁1112之间。第四侧壁1114设置成垂直于第一侧壁1111和第二侧壁1112。第四侧壁1114设置成与第三侧壁1113平行。
传送单元1200在壳体1100中的加热单元1300和冷却单元1400之间移动基板W。传送单元1200包括传送板1210、支撑臂1220、支撑环1230和驱动构件1270。
基板W位于传送板1210上。传送板1210具有圆形形状。传送板1210与基板W具有相同的尺寸。传送板1210由导热性优异的金属材料形成。在传送板1210中形成有引导孔1250。引导孔1250是用于容纳升降销1315的空间。引导孔1250从传送板1210的外部延伸到内部。引导孔1250防止传送板1210在传送板1210移动时干扰升降销1315或与升降销1315碰撞。
支撑臂1220固定地联接到传送板1210。支撑臂1220设置在传递板1210和驱动构件1270之间。
支撑环1230被设置成围绕传送板1210。支撑环1230支撑传送板1210的周边。支撑环1230用于支撑基板W,使得在基板W位于传送板1210上之后使基板W位于适当的位置。
驱动构件1270进给或传送传递板1210。驱动构件1270被设置成使传递板1210线性移动或将其垂直驱动。
加热单元1300在支撑基板W的同时加热基板。加热单元1300包括板1311、销孔1312、加热器1313、升降销1315、盖1317和驱动器1319。
板1311被设置成具有圆柱形形状。板1311可以由导热性优异的材料形成。作为示例,室1311可以由金属材料形成。容纳升降销1315的销孔1312形成在板1311上。
加热器1313加热基板W。加热器1313设置在板1311的内部。例如,加热器1313可以是安装在板1311中的加热线圈。与此不同,板1311可以设置有加热模式。由于加热器1313设置在板1311的内部,因此在加热基板W之前首先加热板1311。
当升降销1315向上和向下移动基板W时,销孔1312设置用作升降销1315移动的路径。可以在板1311上设置多个销孔1312。
升降销1315通过升降机构(未示出)上下移动。升降销1315可以将基板W安置在板1311上。升降销1315可以将基板W升高到与板1311间隔一定距离的位置。
盖1317位于板1311上。盖1317设置成具有圆柱形形状。盖1317在其内部提供加热空间。当基板W移动到板1311时,盖1317被驱动器1319移动到板1311的上侧。当基板W被板1311加热时,盖1317被驱动器1319向下移动以形成加热基板W的加热空间。
驱动器1319通过支撑部1318固定地联接到盖1317。当基板W被进给或传送到板1311时,驱动器1319将盖1317升高。作为示例,驱动器1319可以被设置为气缸驱动器。
冷却单元1400用于冷却板1311或经处理的基板W。冷却单元1400位于壳体1100的内部。冷却单元1400位于第二侧壁1112相比更靠近第一侧壁1111的位置。冷却单元400包括冷却板1410。
冷却板1410冷却基板W。冷却板1410可以具有圆柱形形状。冷却板1410可以具有与基板W对应的尺寸。可以在冷却板1410的内部设置冷却通道。冷却水可以被供给到冷却通道以冷却基板W。当基板W被保持在传送板1210中时,传送板1210可以位于冷却板1410上且基板W可以被冷却。
控制器30控制工艺执行模块20,使得可以依次执行第一涂覆工艺S10、蚀刻工艺S30和第二涂覆工艺S40。控制器30控制工艺执行模块20,使得在第一涂覆工艺S10和蚀刻工艺S30之间以及在第二涂覆工艺S40之后进行热处理工艺。控制器30控制旋转驱动构件384和386以及蚀刻单元940或旋转驱动构件384和涂覆单元920,使得可以在供给化学品或涂覆液同时以第一速度r1和第二速度r2交替地重复旋转基板W。第二速度r2是比第一速度r1更高的速度。
在下文中,将描述通过使用根据本发明构思的图1的基板处理***1处理基板的方法。
图8是示出根据本发明构思的实施方式的基板处理方法的流程图。参考图如图8,基板处理方法包括第一涂覆工艺S10、蚀刻工艺S30、第二涂覆工艺S40和热处理工艺S20和S50。可以依次执行第一涂覆工艺S10、蚀刻工艺S30和第二涂覆工艺S40。
图9至图11是示出对其执行图8的第一涂覆工艺S10、蚀刻工艺S30和第二涂覆工艺S40的基板W的截面图。参考图9,在第一涂覆工艺S10中,控制器30控制第一涂覆单元920a和基板支撑单元830以进行第一涂覆工艺S10。在第一涂覆工艺S10中,通过在第一室260a中将第一涂覆液供给到具有图案13的基板W上以形成第一涂层15。将第一涂覆液涂覆到图案13之间的凹部和图案13的上表面,以在图案13之间的凹部和图案13的上表面上形成第一涂层15。
参考图10,在蚀刻工艺S30中,控制器30控制蚀刻单元940和基板支撑单元830,以在第一室260a或第二室260b中进行蚀刻工艺S30。在蚀刻工艺S30中,通过将化学品供应到基板W,去除位于图案13的上表面上的第一涂层15,使得图案13的上表面暴露。对基板W的整个上表面进行蚀刻工艺S30。
图12和图13是示出根据本发明构思的实施方式的旋转卡盘832的旋转速度的曲线图。参考图12,根据实施方式,控制器30控制旋转驱动构件384和386以及蚀刻单元940,使得可以以第一速度r1和第二速度r2交替地重复旋转位于旋转卡盘832上的基板W。第二速度r2是比第一速度r1更高的速度。例如,第一速度r1可以为100rpm以下,第二速度r2可以为1000rpm以上。此外,第一速度r1可以为零,而基板W可以不被旋转。因为当在供给化学品的同时以第一速度r1旋转基板W时施加相对低的离心力,所以化学品可以长时间停留在基板W上以使蚀刻对象充分反应。此外,由于在以第二速度r2旋转基板W时施加相对高的离心力,所以化学品以更高的速度被扩散到基板W,使得缩短了将化学品涂覆在整个基板上的时间段。此外,通过强离心力,可以将蚀刻副产物引起的颗粒与化学品一起从基板W去除,从而可以减少颗粒。
控制器30可以控制旋转驱动构件384和386以及蚀刻单元940,使得可以在第一速度r1和第二速度r2之间进行速度变换两次以上。控制器30可以控制旋转驱动构件384和386以及蚀刻单元940,使得基板W的初始旋转速度可以是第一速度r1或第二速度r2。控制器30可以控制旋转驱动构件384和386以及蚀刻单元940,使得当在第一速度r1和第二速度r2之间改变基板W的旋转速度时,基板W的旋转加速度可以是恒定的。
参考图13,不同于图12的情况,控制器30可以控制旋转驱动构件384和386以及蚀刻单元940,使得当在第一速度r1和第二速度r2之间改变基板W的旋转速度时,基板W的旋转加速度可以是变化的。
与干法蚀刻相比,通过以湿法供给化学品进行蚀刻工艺S30,可以实现高选择比的蚀刻。当通过使用图1的装置执行本发明构思的基板处理方法时,如果在第一室260a中进行蚀刻工艺S30,则在第一涂覆工艺S10完成之后,再次将基板W载送到第一室260a中用于蚀刻工艺S30,并且将基板W从第一室260a载出,使得在烘焙室280中进行热处理工艺S20。因此,如果在第二室260b中进行蚀刻工艺S30,则不需要在蚀刻工艺S30和第二涂覆工艺S40之间转移基板,与在第二室260b中进行蚀刻工艺S30的情况相比,因为整个工艺时间缩短,所以蚀刻工艺S30可以是高效的。
参考图11,在第二涂覆工艺S40中,控制器30控制第二涂覆单元920b和基板支撑单元830以进行第二涂覆工艺S40。在第二涂覆工艺S40中,通过在第二室260b中将第二涂覆液供给到基板W上来形成第二涂层17。涂覆第二涂覆液,使得形成在图案13的上表面上的第二涂层17和形成在第一涂层15的上表面上的第二涂层17彼此平齐。
在热处理工艺S20和S50中,通过将基板W加热到特定温度来对基板W进行热处理。在第一涂覆工艺S10和蚀刻工艺S30之间以及在第二涂覆工艺S40之后进行热处理工艺S20和S50。在第一涂覆工艺S10和蚀刻工艺S30之间进行的热处理工艺S20中基板W被加热的温度和在第二涂覆工艺S40之后进行的热处理工艺S50中基板W被加热的温度可以不同。为了缩短基板W的传送距离,可以在与第一室260a对应的高度处设置进行在第一涂覆工艺S10和蚀刻工艺S30之间所进行的热处理工艺S20的烘焙室280,可以在与第二室260b对应的高度处设置进行在第二涂覆工艺S40之后所进行的热处理工艺S50的烘焙室280。
已经描述了将在改变旋转驱动构件384和386的转速的同时供给液体的方法应用于蚀刻过程。然而,与此不同,本发明构思的在改变旋转驱动构件384和386的转速的同时提供液体的方法可以应用于在旋转基板W的同时供给液体的各种类型的基板处理工艺,例如第一涂覆工艺或第二涂覆工艺。
如上所述,在根据本发明构思的实施方式的装置和方法中,可以以高速状态增大将处理液扩散到基板上的速度,对于相同量的供给处理液,通过在将处理液供给到基板W的同时改变基板的旋转速度,可以容易地从基板W除去处理副产物,并且通过在低速下充分提供处理液和基板W上的处理对象材料的反应时间,可以提高基板W的处理效率。因此,本发明构思的装置和方法可以增加基板的处理效率并减少所使用的处理液的量。
根据本发明构思的实施方式,本发明构思的装置和方法可以提高处理效率。
根据本发明构思的实施方式,本发明构思的装置和方法可以减少所使用的处理液的量。
虽然已经参考实施方式描述了本发明构思,但是对于本领域技术人员显而易见的是,在不脱离本发明构思的精神和范围的情况下,可以进行各种改变和修改。因此,应当理解,上述实施方式不是限制性的,而是说明性的。
Claims (12)
1.一种通过将处理液供给到基板上来处理基板的方法,所述方法包括:
在供给所述处理液的同时以第一速度和第二速度交替地重复旋转所述基板,
其中所述第二速度高于所述第一速度,
其中,所述第一速度为100rpm以下,所述第二速度为1000rpm以上,
其中,当所述基板以所述第二速度旋转时开始供应所述处理液,所述处理液是用于蚀刻涂覆在所述基板上的膜的化学品,并且
其中,在将所述基板的旋转速度在所述第一速度和所述第二速度之间改变时,所述基板的旋转加速度是变化的,并且在所述旋转加速度变化的过程中,所述旋转加速度从较高加速度平滑地变化到较低加速度。
2.根据权利要求1所述的方法,其中,将所述基板的旋转速度在所述第一速度和所述第二速度之间改变两次以上。
3.根据权利要求1所述的方法,其中,所述第一速度为0rpm。
4.根据权利要求1所述的方法,其中,所述处理液包括稀释剂。
5.根据权利要求1所述的方法,其中,供给所述处理液的时间段为100秒以下。
6.一种用于处理基板的方法,所述方法包括:
第一涂覆工艺,所述第一涂覆工艺在第一室中通过将第一涂覆液供给到具有图案的所述基板上而形成第一涂层;
蚀刻工艺,所述蚀刻工艺通过将化学品供给到所述基板上而去除位于所述图案的上表面上的第一涂层,使得所述图案的所述上表面暴露;和
第二涂覆工艺,所述第二涂覆工艺在第二室中通过将第二涂覆液供给到具有图案的所述基板上而形成第二涂层,
其中依次执行所述第一涂覆工艺、所述蚀刻工艺和所述第二涂覆工艺,
其中在所述蚀刻工艺中,在供给所述化学品的同时,以第一速度和第二速度交替地重复旋转所述基板,以及
其中所述第二速度高于所述第一速度,
其中,所述第一速度为100rpm以下,所述第二速度为1000rpm以上,
其中,当所述基板以所述第二速度旋转时开始供应所述化学品,并且
其中,在将所述基板的旋转速度在所述第一速度和所述第二速度之间改变时,所述基板的旋转加速度是变化的,并且在所述旋转加速度变化的过程中,所述旋转加速度从较高加速度平滑地变化到较低加速度。
7.根据权利要求6所述的方法,其中,将所述基板的旋转速度在所述第一速度和所述第二速度之间改变两次以上。
8.根据权利要求6或7所述的方法,其中,在所述第一室和所述第二室中的一者中执行所述蚀刻工艺。
9.一种基板处理装置,包括:
基板支撑构件,所述基板支撑构件支撑所述基板;
旋转驱动构件,所述旋转驱动构件被配置为旋转所述基板支撑构件;
液体供给单元,所述液体供给单元被配置为将处理液供给到由所述基板支撑构件所支撑的所述基板上;以及
控制器,所述控制器被配置为控制所述旋转驱动构件和所述液体供给单元,
其中所述控制器控制所述旋转驱动构件和所述液体供给单元,使得在供给所述处理液的同时以第一速度和第二速度交替地重复旋转所述基板;以及
其中所述第二速度高于所述第一速度,
其中,所述第一速度为100rpm以下,所述第二速度为1000rpm以上,
其中,当所述基板以所述第二速度旋转时开始供应所述处理液,所述处理液是用于蚀刻涂覆在所述基板上的膜的化学品,并且
其中,所述控制器控制所述旋转驱动构件,使得在将所述基板的旋转速度在所述第一速度和所述第二速度之间改变时,所述基板的旋转加速度是变化的,并且在所述旋转加速度变化的过程中,所述旋转加速度从较高加速度平滑地变化到较低加速度。
10.根据权利要求9所述的基板处理装置,其中,所述控制器控制所述旋转驱动构件,使得将所述基板的旋转速度在所述第一速度和所述第二速度之间改变两次以上。
11.根据权利要求9所述的基板处理装置,其中,所述处理液包括稀释剂。
12.根据权利要求11所述的基板处理装置,其中,所述液体供给单元包括涂覆单元,所述涂覆单元被配置为将涂覆液供给到具有图案的所述基板上。
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