CN107785467B - Light emitting element - Google Patents
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- CN107785467B CN107785467B CN201710590005.8A CN201710590005A CN107785467B CN 107785467 B CN107785467 B CN 107785467B CN 201710590005 A CN201710590005 A CN 201710590005A CN 107785467 B CN107785467 B CN 107785467B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Abstract
The invention discloses a light-emitting element, which comprises a semiconductor lamination layer, a first semiconductor layer, a second semiconductor layer and an active layer capable of emitting UV light, wherein the active layer is positioned between the first semiconductor layer and the second semiconductor layer; a first layer over the second semiconductor layer, the first layer comprising a metal oxide; and a second layer disposed on the first layer, the second layer comprising graphene, wherein the first layer is entirely covered on the second semiconductor layer, and the first layer comprises a thickness less than 10 nm.
Description
Technical Field
The present invention relates to a light emitting device, and more particularly, to a light emitting device including a semiconductor stack and a conductive layer on the semiconductor stack.
Background
Light-Emitting diodes (LEDs) are solid-state semiconductor Light-Emitting elements that have the advantages of low power consumption, low heat generation, long operating life, shock resistance, small size, fast response speed, and good optoelectronic properties, such as stable emission wavelength. Therefore, the light emitting diode is widely applied to household appliances, equipment indicator lamps, photoelectric products and the like.
Disclosure of Invention
The invention discloses a light-emitting element, which comprises a semiconductor lamination layer, a first semiconductor layer, a second semiconductor layer and an active layer capable of emitting UV light, wherein the active layer is positioned between the first semiconductor layer and the second semiconductor layer; a first layer over the second semiconductor layer, the first layer comprising a metal oxide; and a second layer disposed on the first layer, the second layer comprising graphene, wherein the first layer is entirely covered on the second semiconductor layer, and the first layer comprises a thickness less than 10 nm.
The invention also discloses a method for manufacturing a light-emitting element, which comprises providing a semiconductor lamination layer, wherein the semiconductor lamination layer is provided with a first semiconductor layer, a second semiconductor layer and an active layer capable of emitting UV light, and the active layer is positioned between the first semiconductor layer and the second semiconductor layer; forming a first layer over the second semiconductor layer, the first layer comprising a metal oxide; and forming a second layer on the first layer, wherein the second layer comprises graphene, the first layer covers the second semiconductor layer entirely, and the first layer comprises a thickness less than 10 nanometers.
Drawings
Fig. 1 is a schematic diagram illustrating a method for manufacturing a light emitting device 1 according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a method for manufacturing a light emitting device 1 according to an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating a structure of a light emitting device 1 according to an embodiment of the invention;
FIG. 4 is a diagram illustrating a structure of a light emitting device 2 according to an embodiment of the present invention;
fig. 5 is a schematic diagram illustrating a structure of a light emitting device 3 according to an embodiment of the present invention.
Description of the symbols
1 light emitting element
2, 3 light emitting device
55 supporting layer
10 base plate
20 semiconductor stack
21 first semiconductor layer
22 second semiconductor layer
23 active layer
30 first electrode
40 second electrode
50 conductive layer
51 first layer
52 second layer
70 packaging substrate
500 vector
711 first gasket
712 second gasket
700 insulating part
74 reflection structure
602 lampshade
604 reflecting mirror
606 bearing part
608 luminous unit
610 luminous module
612 lamp holder
60 insulating layer
614 Heat sink
616 connection part
Detailed Description
For a more complete and complete description of the present invention, reference is now made to the following description of embodiments taken in conjunction with the accompanying drawings. However, the following examples are provided to illustrate the light-emitting element of the present invention, and the present invention is not limited to the following examples. The dimensions, materials, shapes, relative arrangements and the like of the constituent elements described in the embodiments of the present invention are not limited to the above description, and the scope of the present invention is not limited to these, but is merely illustrative. The sizes and positional relationships of the components shown in the drawings may be exaggerated for clarity. In the following description, the same or similar members are denoted by the same names and symbols for the sake of appropriately omitting detailed description.
Fig. 1 to 3 illustrate a method for manufacturing a light emitting device 1 according to an embodiment of the present invention.
As shown in fig. 1 to 3, the method for manufacturing the light emitting device 1 includes providing a substrate 10; forming a semiconductor stack 20 on the substrate 10, wherein the semiconductor stack 20 includes a first semiconductor layer 21, a second semiconductor layer 22, and an active layer 23 located between the first semiconductor layer 21 and the second semiconductor layer 22; forming a first layer 51 on the semiconductor stack 20; providing a carrier 500; forming a second layer 52 on the carrier 500; forming a support layer 55 on the second layer 52; removing the carrier 500; bonding the second layer 52 to the first layer 51 and removing the support layer 55; forming a first electrode 30 on the first semiconductor layer 21 and a second electrode 40 on the second semiconductor layer 22; and forming an insulating layer 60 to cover the semiconductor stack 20 and/or a surface of the first and second electrodes 30 and 40.
In one embodiment of the present invention, the substrate 10 is provided as a growth substrate, including a gallium arsenide (GaAs) wafer for growing aluminum gallium indium phosphide (AlGaInP) or sapphire (Al) wafer for growing indium gallium nitride (InGaN) and aluminum gallium nitride (AlGaN)2O3) A wafer, a gallium nitride (GaN) wafer, or a silicon carbide (SiC) wafer.
In an embodiment of the present invention, the semiconductor stack 20 with electro-optical characteristics is formed on the substrate 10 by Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), hydride vapor deposition (HVPE), Physical Vapor Deposition (PVD) or ion plating, such as light-emitting (light-emitting) stack, wherein the PVD includes Sputtering or evaporation (evaporation). The first semiconductor layer 21 and the second semiconductor layer 22 may be cladding layers (cladding layers) or confining layers (confining layers) having different conductivity types, electrical properties, polarities, or doped elements for providing electrons or holes, for example, the first semiconductor layer 21 is an n-type semiconductor and the second semiconductor layer 22 is a p-type semiconductor. The active layer 23 is formed between the first semiconductor layer 21 and the second semiconductor layer 22, and electrons and holes are recombined in the active layer 23 under a current driving, so that electric energy is converted into light energy to emit light. The wavelength of light emitted from the light emitting element 1 is adjusted by changing the physical and chemical composition of one or more layers of the stacked semiconductor layers 20. The material of the semiconductor stack 20 comprises a group III-V semiconductor material, such as AlxInyGa(1-x-y)N or AlxInyGa(1-x-y)P, wherein x is more than or equal to 0, and y is less than or equal to 1; (x + y) is less than or equal to 1.
In an embodiment of the present invention, the active layer 23 is made of AlGaN or AlInGaN materials, and emits ultraviolet light (UV) with a wavelength between 400nm and 250 nm. The active layer 23 may be a Single Heterostructure (SH), a Double Heterostructure (DH), a double-side double heterostructure (DDH), a multi-quantum well (MQW). The material of the active layer 23 may be a neutral, p-type or n-type conductivity semiconductor.
In an embodiment of the present invention, PVD aluminum nitride (AlN) is formed between the semiconductor stack 20 and the substrate 10, and the PVD aluminum nitride (AlN) may be used as a buffer layer to improve the epitaxial quality of the semiconductor stack 20. In one embodiment, the target material used to form PVD aluminum nitride (AlN) is comprised of aluminum nitride. In another embodiment, a target comprised of aluminum is used that reacts with the aluminum target to form aluminum nitride in the presence of a nitrogen source.
In an embodiment of the invention, as shown in fig. 1, a carrier 500 with a thickness is first placed in a horizontal furnace, hydrogen is introduced in an inert environment and heated to a temperature above 800 ℃ to remove a native oxide layer on the surface of the carrier 500, a carbon-containing gas source is introduced to form a second layer 52 on the surface of the carrier 500, an inert gas is introduced to accelerate cooling of the furnace, the furnace is cooled to room temperature, the carrier 500 with the second layer 52 is taken out, a support layer 55 is then provided to cover the surface of the second layer 52, and the carrier 500 is removed. Specifically, for example, a copper foil is selected as the carrier 500, the copper foil itself has a thickness of 25 μm, the copper foil is placed in a horizontal furnace, 10sccm hydrogen is introduced under argon (Ar) gas and heated to 900 ℃ to remove the native oxide layer on the surface of the copper foil, 5sccm carbon-containing gas source such as methane is introduced to form the second layer 52 such as graphene, on the surface of the copper foil, 100sccm argon is finally introduced to accelerate cooling of the furnace tube, the furnace tube is cooled to room temperature, the copper foil with the formed graphene is taken out, then a thermal removal tape (thermal release tape) is used as the supporting layer 55, the supporting layer is attached to the surface of the graphene, and the supporting layer is soaked to ferric chloride(FeCl3) In the solution, the copper foil is removed by etching.
In an embodiment of the present invention, the carrier 500 includes a metal material as a metal catalyst for growing graphene, the carrier 500 may be a flexible substrate, and the shape of the carrier 500 is not limited and includes a rectangle or a circle.
In one embodiment of the present invention, the supporting layer 55 comprises a polymer material, such as polymethyl methacrylate (PMMA). The thickness of the support layer 55 is, for example, 10 nm to 2 cm.
In one embodiment of the present invention, as shown in fig. 2, a metal oxide, such as nickel oxide, with a thickness of 0.1 to 5nm is deposited on the semiconductor stack 20 by atomic layer chemical vapor deposition (ALD) to form a first layer 51. In one embodiment of the present invention, the precursors are, for example, water and NiCp2The plating rate was 0.42A/cycle. In one embodiment of the present invention, the thickness of the first layer 51 is between 0.1 and 5 nm.
In an embodiment of the present invention, the first layer 51 is a thin film with high transmittance in the UV light range and good conductivity, and if the transmittance of the first layer 51 in the UV light is to be increased, it needs to be made into an extremely thin film, for example, with a thickness of less than 10 nm, but when the thickness of the thin film is less than 10 nm, the thin film forms island-shaped discontinuities, so that the contact resistance of the thin film is increased; if a continuous film is to be formed, the film thickness is increased, which has the disadvantage of reducing the transparency of the film to UV light. In one embodiment of the present invention, the first layer 51 comprising metal oxide is formed by atomic layer chemical vapor deposition (ALD), the first layer 51 covers the entire surface of the semiconductor stack 20, and the first layer 51 has a thickness variation of less than 5nm, preferably 2 nm.
In an embodiment of the invention, as shown in fig. 1 and fig. 2, the second layer 52 is attached to the semiconductor stack 20 after the first layer 51 is plated by applying pressure to the supporting layer 55 by hot stamping and heating to a temperature above 130 ℃, and then the supporting layer 55 is removed, leaving the second layer 52 on the first layer 51.
In an embodiment of the present invention, the first electrode 30 and/or the second electrode 40 may have a single layer or a stacked layer structure. In order to reduce the resistance of the semiconductor stack 20, the material of the first electrode 30 and/or the second electrode 40 includes a metal material, for example, a metal such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), or platinum (Pt), or an alloy of the above materials.
In an embodiment of the present invention, the material of the first electrode 30 and/or the second electrode 40 includes a metal with high reflectivity, such as aluminum (Al), silver (Ag), or platinum (Pt).
In an embodiment of the invention, a side of the first electrode 30 and/or the second electrode 40 contacting the stacked semiconductor layer 20 includes chromium (Cr) or titanium (Ti) to increase a bonding strength between the first electrode 30 and/or the second electrode 40 and the stacked semiconductor layer 20.
In an embodiment of the present invention, the insulating layer 60 is used to protect the semiconductor layer from the external environment. The insulating layer 60 has light transmittance, is formed of a non-conductive material, and includes an organic material, such as Su8, benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Epoxy (Epoxy), Acrylic Resin (Acrylic Resin), cyclic olefin Polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (polyethylimide), Fluorocarbon Polymer (Fluorocarbon Polymer), or an inorganic material, such as silica gel (Silicone), Glass (Glass), or a dielectric material, such as aluminum oxide (Al)2O3) Silicon nitride (SiN)x) Silicon oxide (SiO)x) Titanium oxide (TiO)x) Or magnesium fluoride (MgF)x)。
Fig. 3 shows a structure of a light emitting device 1 according to an embodiment of the present invention. The light-emitting device 1 comprises a semiconductor stack 20 having a first semiconductor layer 21, a second semiconductor layer 22, and an active layer 23 capable of emitting UV light between the first semiconductor layer 21 and the second semiconductor layer 22; a conductive layer 50 is located over the second semiconductor layer 22. The conductive layer 50 includes a first layer 51 located on a side close to the second semiconductor layer 22, and a second layer 52 located on a side far from the second semiconductor layer 22.
In one embodiment of the present invention, the conductive layer 50 includes a plurality of layers each having different materials to form a transparent electrode, for example, the material of the first layer 51 includes metal or metal oxide, and the second layer 52 includes non-metal material, such as graphene.
In an embodiment of the present invention, the first layer 51 includes a resistance greater than a resistance included in the second layer 52. In one embodiment of the present invention, the second layer 52 has a sheet resistance of 2.1 to 3.9 ohm/square.
In one embodiment of the present invention, the conductive layer 50 and the second semiconductor layer 22 have a thickness less than 10%-3Ω·cm2The contact resistance of (1).
In an embodiment of the present invention, the conductive layer 50 includes a first layer and/or a second layer having a thickness less than 10 mm and the second semiconductor layer 22-3Ω·cm2The contact resistance of (1).
In one embodiment of the present invention, the second semiconductor layer 22 has p-type doping and has a doping concentration greater than 1E +19cm-3. The p-type dopant contains group II elements such as magnesium (Mg), zinc (Zn), cadmium (Cd), beryllium (Be), or calcium (Ca).
In one embodiment of the present invention, the first layer 51 forms a low resistance contact, such as an ohmic contact, with the second semiconductor layer 22. In one embodiment, when the second semiconductor layer 22 is p-type gallium nitride (GaN), the first layer 51 comprises a material having a work function greater than 4.5eV, preferably between 5-7 eV, or when the second semiconductor layer 22 is p-type aluminum gallium nitride (AlGaN), the first layer 51 comprises a material having a work function greater than 4.5eV, preferably between 5-7 eV. The material of the first layer 51 comprises a metal or metal oxide, such as nickel oxide (NiO), cobalt oxide (Co)3O4) Copper oxide (Cu)2O)。
In one embodiment of the present invention, the second semiconductor layer 22 comprises AlxGa1-xN, and 0.55<x<0.65, the second semiconductor layer 22 comprises a thickness less than
Or is between
And
in the meantime. The light-emitting device 1 comprises a contact layer (not shown) between the second semiconductor layer 22 and the first layer 51, wherein the contact layer comprises GaN and the contact layer comprises a thickness that is substantially transparent to light emitted from the active layer 23 and forms a low-resistance contact, such as an ohmic contact, with the first layer 51. In this embodiment, the thickness of the contact layer is less than
Or is between
And
when the thickness of the GaN layer is less than
In this case, about 90% or more of the light from the light-emitting element 1 can be extracted. The contact layer comprises GaN with p-type doping and a doping concentration greater than 1 × 1020/cm3Or between 1X 1020And 2X 1020/cm3In the meantime.
In one embodiment of the present invention, the second semiconductor layer 22 comprises AlxGa1-xN, the light emitting device 1 comprises a contact layer (not shown) between the second semiconductor layer 22 and the first layer 51, the contact layer comprising AlyGa1-yN, wherein x, y>0, and x>y. The second semiconductor layer 22 includes a thickness less than
Or is between
And
in the meantime. The contact layer comprises a thickness less than
Or is between
And
in the meantime. The contact layer comprises AlGaN with p-type doping and has a doping concentration greater than 1 × 1019/cm3Or between 1X 1019And 8X 1019/cm3In the meantime.
In one embodiment of the present invention, the second semiconductor layer 22 comprises AlxGa1-xN, the light emitting device 1 comprises a contact layer (not shown) between the second semiconductor layer 22 and the first layer 51, the contact layer comprising AlyGa1-yN, wherein 0.55<x<0.65，0.05<y<0.1。
In an embodiment of the present invention, the contact layer includes AlyGa1-yN has a p-type dopant, such as a group ii element, e.g., magnesium (Mg), zinc (Zn), cadmium (Cd), beryllium (Be), or calcium (Ca). And preferably, y is more than or equal to 0.01 and less than or equal to 0.1.
In an embodiment of the present invention, the contact layer includes AlyGa1-yN has p-type doping and has a doping concentration greater than 1 × 1019/cm3Or between 1X 1019And 8X 1019/cm3In the meantime.
In one embodiment of the present invention, the conductive layer 50 and the contact layer have a thickness of less than 10-3Ω·cm2The contact resistance of (1).
In one embodiment of the present invention, the metal oxide included in the first layer 51 includes a metal having multiple oxidation states, such as nickel oxide (NiO)x) The nickel atom of (A) includes a first oxidation state of +2 and a second oxidation state of + 3.
In an embodiment of the present invention, the metal oxide included in the first layer 51 includes a metal, and the metal has a single oxidation state.
In one embodiment of the present invention, the first layer 51 comprises a metal oxide having a stoichiometric ratio (stoichiometricity) of metal to oxygen that is not equal to 1.
In one embodiment of the present invention, the first layer 51 comprises p-type doping to reduce contact resistance.
In one embodiment of the present invention, the first layer 51 comprises a metal oxide having an energy gap greater than 3eV, preferably greater than 3.2eV, and more preferably greater than 3.4 eV. For example, metal oxides, such as nickel oxide (NiO)x) The band gap is about 3.6-4 eV.
In one embodiment of the present invention, the first layer 51 entirely covers the second semiconductor layer 22, and the first layer 51 has a thickness less than 10 nm, preferably less than 5nm, and more preferably less than 2 nm. The first layer 51 has a thickness variation of less than 5nm, preferably 2 nm. In this embodiment, the first layer 51 completely covers the second semiconductor layer 22 means that the upper surface of the second semiconductor layer 22 is completely covered by the first layer 51, and the upper surface of the second semiconductor layer 22 is not exposed.
In an embodiment of the present invention, the first layer 51 and/or the second layer 52 have a transmittance of 80% or more with respect to a wavelength of 200 to 280 nm.
In an embodiment of the present invention, the second layer 52 includes a light-transmissive material, such as graphene. The graphene is a hexagonal two-dimensional planar material formed by bonding carbon atoms in an sp2 mixed orbital domain, the carbon-carbon bond in the graphene structure is about 0.142nm, and the area of the hexagonal structure is about 0.052nm2The monolayer thickness is only 0.34nm, and the thermal conductivity coefficient is higher than 5300W/mK and higher than 15000cm2Electrons of/V.sMobility of less than 10-6Resistivity of omega cm
In one embodiment of the present invention, the second layer 52 has a p-type dopant, and the p-type dopant includes a group II element such as magnesium (Mg), zinc (Zn), cadmium (Cd), beryllium (Be), or calcium (Ca).
In one embodiment of the present invention, the second layer 52 includes a plurality of sub-layers, such as 2-10 graphene layers.
In an embodiment of the present invention, the graphene layer is formed of a plurality of units, each unit includes a hexagon composed of carbon atoms, and the plurality of units are connected to each other to form a two-dimensional planar material having an Armchair (Armchair) structure or a two-dimensional planar material having a Zigzag (Zigzag) structure.
In one embodiment of the present invention, the second layer 52 comprises one or more graphene layers, wherein each graphene layer has a thickness.
Fig. 4 is a schematic view of a light emitting device 2 according to an embodiment of the invention. The light emitting device 1 in the foregoing embodiment is mounted on the first pad 711 and the second pad 712 of the package substrate 70 by wire bonding or flip chip. The first pad 711 and the second pad 712 are electrically insulated by an insulating portion 700 including an insulating material. Flip chip mounting is a light extraction surface mainly formed on the growth substrate side facing the pad formation surface. In order to increase the light extraction efficiency of the light emitting device 2, a reflective structure 74 may be disposed around the light emitting element 1.
Fig. 5 is a schematic view of a light emitting device 3 according to an embodiment of the invention. The light emitting device 3 is a bulb lamp including a lamp housing 602, a reflector 604, a light emitting module 610, a lamp holder 612, a heat sink 614, a connecting portion 616 and an electrical connecting element 618. The light emitting module 610 includes a carrying portion 606, and a plurality of light emitting units 608 located on the carrying portion 606, wherein the plurality of light emitting units 608 may be the light emitting elements 1 or the light emitting devices 2 in the foregoing embodiments.
The examples are given solely for the purpose of illustration and are not intended to limit the scope of the invention. Any obvious modifications or variations can be made to the present invention without departing from the spirit or scope of the present invention.
Claims (24)
1. A light emitting element comprising:
a semiconductor stack having a first semiconductor layer, a second semiconductor layer, and an active layer capable of emitting UV light between the first semiconductor layer and the second semiconductor layer; and
a conductive layer over the second semiconductor layer, wherein the conductive layer comprises:
a first layer over the second semiconductor layer, the first layer comprising a metal oxide, wherein the first layer comprises a thickness less than 10 nanometers; and
a second layer located on the first layer, the second layer comprising graphene, wherein the first layer entirely covers the second semiconductor layer;
a contact layer between the second semiconductor layer and the first layer, wherein the second semiconductor layer comprises AlxGa1-xN, and the contact layer comprises AlyGa1-yN, wherein 0.55<x<0.65, y is more than or equal to 0, and x>y；
An electrode on the second semiconductor layer, wherein the electrode does not directly contact the first layer.
2. The light-emitting device according to claim 1, wherein the metal oxide has a work function greater than 4.5 eV.
3. The light-emitting device according to claim 1, wherein the metal oxide has a work function of 5eV to 7 eV.
4. The light-emitting element according to claim 1, wherein the metal oxide comprises nickel oxide, copper oxide, or cobalt oxide.
5. The light-emitting device according to claim 1, wherein the metal oxide comprises a metal having a first oxidation state and a second oxidation state.
6. The light emitting device of claim 1, wherein the UV light comprises a wavelength between 100 nm and 290 nm.
7. The light-emitting element according to claim 1, wherein the second semiconductor layer comprises AlxGa1-xN, and 0.55<x<0.65, and the contact layer comprises GaN.
8. The light-emitting device of claim 7, wherein the contact layer has p-type doping and has a doping concentration greater than 1 x 1020/cm3。
9. The light-emitting device of claim 8, wherein the contact layer has p-type dopant and has a dopant concentration of 1 x 1020And 2X 1020/cm3In the meantime.
10. The light-emitting device according to claim 7, wherein the contact resistance between the conductive layer and the contact layer is less than 10-3Ω·cm2。
11. The light emitting device of claim 7, wherein the contact layer has a thickness of between 50 angstroms and 150 angstroms.
12. The light-emitting element according to claim 1, wherein 0.05< y < 0.1.
13. The light-emitting element according to claim 1, wherein 0.01. ltoreq. y.ltoreq.0.1.
14. The light-emitting device according to claim 1, wherein the contact resistance between the conductive layer and the contact layer is less than 10-3Ω·cm2。
15. The light-emitting device according to claim 1, wherein the second semiconductor layer has a thickness of less than 1000 angstroms and the contact layer has a thickness of less than 150 angstroms.
16. The light emitting device of claim 15, wherein the contact layer has a thickness of between 50 angstroms and 150 angstroms.
17. The light emitting device of claim 15, wherein the second semiconductor layer is between 250 angstroms and 1000 angstroms thick.
18. The light-emitting device of claim 1, wherein the contact layer has p-type doping and has a doping concentration greater than 1 x 1019/cm3。
19. The light-emitting device of claim 18, wherein the contact layer has p-type dopant and has a dopant concentration of 1 x 1019And 8X 1019/cm3In the meantime.
20. The light emitting device of claim 1, wherein the variation in thickness of the first layer is less than 5 nm.
21. The light-emitting element according to claim 1, further comprising another electrode on the first semiconductor layer, the electrode being on the second layer.
22. The light-emitting element according to claim 21, wherein the electrode contacts the second layer.
23. The light-emitting element according to claim 1, wherein the first layer has a sheet resistance value larger than a sheet resistance value of the second layer.
24. The light-emitting device according to claim 1, wherein the second layer comprises a plurality of sub-layers.
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| US20120104432A1 (en) * | 2010-10-28 | 2012-05-03 | Hyun Wook Shim | Semiconductor light emitting device |
| CN103534204A (en) * | 2011-03-29 | 2014-01-22 | 国立大学法人蔚山科学技术大学校产学协力团 | Graphene sheet, transparent electrode including graphene sheet, active layer, and display device, electronic device, photovoltaic device, battery, solar cell, and dye-sensitized solar cell employing transparent electrode |
| US9059339B1 (en) * | 2014-02-11 | 2015-06-16 | International Business Machines Corporation | Light emitting diodes with via contact scheme |
| US20160099386A1 (en) * | 2013-06-17 | 2016-04-07 | Electronics And Telecommunications Research Institute | Light emitting diode and manufacturing method thereof |
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| WO2014175564A1 (en) * | 2013-04-22 | 2014-10-30 | 한국산업기술대학교산학협력단 | Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode |
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| US20120104432A1 (en) * | 2010-10-28 | 2012-05-03 | Hyun Wook Shim | Semiconductor light emitting device |
| CN103534204A (en) * | 2011-03-29 | 2014-01-22 | 国立大学法人蔚山科学技术大学校产学协力团 | Graphene sheet, transparent electrode including graphene sheet, active layer, and display device, electronic device, photovoltaic device, battery, solar cell, and dye-sensitized solar cell employing transparent electrode |
| US20160099386A1 (en) * | 2013-06-17 | 2016-04-07 | Electronics And Telecommunications Research Institute | Light emitting diode and manufacturing method thereof |
| US9059339B1 (en) * | 2014-02-11 | 2015-06-16 | International Business Machines Corporation | Light emitting diodes with via contact scheme |
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