CN107749742A - A kind of solar energy bypass diode module - Google Patents
A kind of solar energy bypass diode module Download PDFInfo
- Publication number
- CN107749742A CN107749742A CN201711147273.9A CN201711147273A CN107749742A CN 107749742 A CN107749742 A CN 107749742A CN 201711147273 A CN201711147273 A CN 201711147273A CN 107749742 A CN107749742 A CN 107749742A
- Authority
- CN
- China
- Prior art keywords
- oxide
- metal
- semiconductor
- control circuit
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 22
- 230000005611 electricity Effects 0.000 claims description 5
- 239000004568 cement Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 239000008393 encapsulating agent Substances 0.000 abstract description 4
- 238000005538 encapsulation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to technical field of solar batteries,A kind of more particularly to bypass diode module for solar cell module,Including bare copper frame,Housing,First metal-oxide-semiconductor,For controlling the first control circuit of the first metal-oxide-semiconductor,Second metal-oxide-semiconductor,For controlling the second control circuit of the second metal-oxide-semiconductor,3rd metal-oxide-semiconductor,For controlling the 3rd control circuit of the 3rd metal-oxide-semiconductor,The source electrode of first metal-oxide-semiconductor is connected with the drain electrode of the second metal-oxide-semiconductor,The source electrode of second metal-oxide-semiconductor is connected with the drain electrode of the 3rd metal-oxide-semiconductor,The drain electrode of first metal-oxide-semiconductor is as module and the connection pin of solar cell positive plate,The source electrode of 3rd metal-oxide-semiconductor is as module and the connection pin of solar cell negative plate,3 metal-oxide-semiconductors and 3 control circuits are nude film and are arranged on bare copper frame and are packaged in housing；Inside modules of the present invention are compact-sized, simple, and modular manufacture cost is low, are easy to process, and using compound encapsulant scheme, reduce thermal resistance caused by encapsulating, improve system reliability.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of pole of bypass two for solar cell module
Tube module.
Background technology
In solar photovoltaic generation system, when system generates electricity, if in solar cell module some or it is multiple
The sunlight of cell piece is obscured by an object, then the cell piece can stop generating electricity, and high resistant characteristic is presented, now, the electricity of series connection with it
The electric energy that pond component is sent can produce power on the cell piece, cause the cell piece heating burnout, or even cause fire.This
Kind phenomenon is referred to as hot spot effect.
In order to restrain hot spot effect, it will usually set bypass diode, bypass diode peace in solar cell module
Reversely in parallel with cell piece in the terminal box of solar cell module, when hot spot occur and occurring, bypass diode is quilt
The battery pack to keep the sun off provides bypass effect, the electricity that other battery packs are generated outwards is exported electric energy by photovoltaic diode,
Protect the cell piece being blocked hot spot phenomenon occur, cause burn, fire.
In the prior art, bypass diode is typically made up of Schottky diode, control chip and MOSFET chips, wherein
Schottky diode individual packages, control chip and the encapsulation of MOSFET chip dies.Problems be present in this packing forms：
1. due to Schottky diode individual packages so that when bypass diode is not working, loop electric leakage is big, loop
Loss power is big, and when bypass diode works, VF values are larger, temperature rise, and loop reliability is relatively low.
2. control chip and the encapsulation of MOSFET chip dies, not only manufacturing process is complicated, and equipment investment cost is larger, finished product
Qualification rate is relatively low, and due to nude film copper aluminum steel mixing routing, when causing chip operation, reliability is relatively low.
The content of the invention
For the problems of the prior art, the present invention provides a kind of copper base control circuit+MOSFET chip packages one
The bypass diode module risen.
To realize above technical purpose, the technical scheme is that：
A kind of solar cell bypass diode module, including bare copper frame, housing, the first metal-oxide-semiconductor, for control first
The first control circuit of metal-oxide-semiconductor, the second metal-oxide-semiconductor, for controlling the second control circuit of the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, being used for
The 3rd control circuit of the 3rd metal-oxide-semiconductor is controlled, the source electrode of first metal-oxide-semiconductor is connected with the drain electrode of the second metal-oxide-semiconductor, and described second
The source electrode of metal-oxide-semiconductor is connected with the drain electrode of the 3rd metal-oxide-semiconductor, and the drain electrode of first metal-oxide-semiconductor is as module and solar cell positive pole
The connection pin of plate, the source electrode of the 3rd metal-oxide-semiconductor is as module and the connection pin of solar cell negative plate, 3 metal-oxide-semiconductors
It is nude film with 3 control circuits and is arranged on bare copper frame and is packaged in housing.
Preferably, 3 control circuit nude films are located on bare copper frame by insulating cement, 3 metal-oxide-semiconductors are welded by soldering
On bare copper frame, control circuit nude film and metal-oxide-semiconductor nude film are connected by copper cash with bare copper frame.
Preferably, the first control circuit, second control circuit and the 3rd control circuit include electric capacity, charge pump
Unit and metal-oxide-semiconductor driver element, the both ends of the electric capacity are connected with charge pump unit, to form RC oscillators, the charge pump
Unit is connected with metal-oxide-semiconductor driver element, and the metal-oxide-semiconductor driver element is connected with metal-oxide-semiconductor.
From the above, it can be seen that the present invention possesses advantages below：
1. inside modules are compact-sized, simple；
2. modular manufacture cost is low, it is easy to process, high in machining efficiency and yields is high；
3. using compound encapsulant scheme, thermal resistance caused by encapsulation is reduced, so as to reduce heating power consumption, improves and is
System reliability.
Brief description of the drawings
Fig. 1 is the structured flowchart of metal-oxide-semiconductor and metal-oxide-semiconductor control circuit of the present invention；
Fig. 2 is the encapsulation schematic diagram of the present invention.
Embodiment
With reference to Fig. 1 to Fig. 2, the specific embodiment of the present invention is described in detail, but the claim of the present invention is not done
Any restriction.
As depicted in figs. 1 and 2, a kind of solar cell bypass diode module, including bare copper frame, housing, the first MOS
Pipe M1, the first control circuit for controlling the first metal-oxide-semiconductor, the second metal-oxide-semiconductor M2, the second control for controlling the second metal-oxide-semiconductor
Circuit, the 3rd metal-oxide-semiconductor M3, the 3rd control circuit for controlling the 3rd metal-oxide-semiconductor, the first metal-oxide-semiconductor M1 source electrode and the second metal-oxide-semiconductor
M2 drain electrode is connected, and the second metal-oxide-semiconductor M2 source electrode is connected with the 3rd metal-oxide-semiconductor M3 drain electrode, and the first metal-oxide-semiconductor M1 drain electrode is as mould
The connection pin of block and solar cell positive plate, the 3rd metal-oxide-semiconductor M3 source electrode is as module and solar cell negative plate
Pin is connected, 3 metal-oxide-semiconductors and 3 control circuits are nude film and are arranged on bare copper frame and are packaged in housing, 3 controls
Circuit die processed is by insulating cement on bare copper frame, and 3 metal-oxide-semiconductors are welded on bare copper frame by soldering, control circuit
Nude film and metal-oxide-semiconductor nude film are connected by copper cash with bare copper frame.
Wherein：First control circuit, second control circuit and the 3rd control circuit include electric capacity C, charge pump unit and
Metal-oxide-semiconductor driver element, electric capacity C both ends are connected with charge pump unit, and to form RC oscillators, charge pump unit is driven with metal-oxide-semiconductor
Moving cell is connected, and metal-oxide-semiconductor driver element is connected with metal-oxide-semiconductor.
D1, D2, D3 are respectively M1, M2, M3 body diode in figure.
One group of metal-oxide-semiconductor and its control circuit are show only in Fig. 2.
3 discrete and series connection diodes that module of the present invention can be substituted in conventional solar cell module make
With not only inside modules are compact-sized, simple, and modular manufacture cost is low, are easy to process, high in machining efficiency and non-defective unit
Rate is high, due to using compound encapsulant scheme, reduces thermal resistance caused by encapsulation, so as to reduce heating power consumption, improves and is
System reliability.
The present disclosure applies equally to the application scenario of bypass diode in micro- inverter and power optimization device.
In summary, the present invention has advantages below：
1. inside modules are compact-sized, simple；
2. modular manufacture cost is low, it is easy to process, high in machining efficiency and yields is high；
3. using compound encapsulant scheme, thermal resistance caused by encapsulation is reduced, so as to reduce heating power consumption, improves and is
Reliability of uniting is the bare copper frame figure of solar cell bypass diode module.
It is understood that above with respect to the specific descriptions of the present invention, it is merely to illustrate the present invention and is not limited to this
Technical scheme described by inventive embodiments.It will be understood by those within the art that still the present invention can be carried out
Modification or equivalent substitution, to reach identical technique effect；As long as meet use needs, all protection scope of the present invention it
It is interior.
Claims (3)
- A kind of 1. solar cell bypass diode module, it is characterised in that：Including bare copper frame, housing, the first metal-oxide-semiconductor, use In the first control circuit of the first metal-oxide-semiconductor of control, the second metal-oxide-semiconductor, the second control circuit for controlling the second metal-oxide-semiconductor, the 3rd Metal-oxide-semiconductor, the 3rd control circuit for controlling the 3rd metal-oxide-semiconductor, the source electrode of first metal-oxide-semiconductor and the drain electrode phase of the second metal-oxide-semiconductor Even, the source electrode of second metal-oxide-semiconductor is connected with the drain electrode of the 3rd metal-oxide-semiconductor, and the drain electrode of first metal-oxide-semiconductor is as module and the sun The connection pin of energy battery positive plate, the source electrode of the 3rd metal-oxide-semiconductor draw as module and the connection of solar cell negative plate Pin, 3 metal-oxide-semiconductors and 3 control circuits are nude film and are arranged on bare copper frame and are packaged in housing.
- 2. solar cell bypass diode module according to claim 1, it is characterised in that：3 control circuit nude films By insulating cement on bare copper frame, 3 metal-oxide-semiconductors are welded on bare copper frame by soldering, control circuit nude film and metal-oxide-semiconductor Nude film is connected by copper cash with bare copper frame.
- 3. solar cell bypass diode module according to claim 1, it is characterised in that：The first control electricity Road, second control circuit and the 3rd control circuit include electric capacity, charge pump unit and metal-oxide-semiconductor driver element, the electric capacity Both ends are connected with charge pump unit, and to form RC oscillators, the charge pump unit is connected with metal-oxide-semiconductor driver element, the MOS Pipe driver element is connected with metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711147273.9A CN107749742A (en) | 2017-11-17 | 2017-11-17 | A kind of solar energy bypass diode module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711147273.9A CN107749742A (en) | 2017-11-17 | 2017-11-17 | A kind of solar energy bypass diode module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107749742A true CN107749742A (en) | 2018-03-02 |
Family
ID=61252100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711147273.9A Pending CN107749742A (en) | 2017-11-17 | 2017-11-17 | A kind of solar energy bypass diode module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107749742A (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080198523A1 (en) * | 2005-05-24 | 2008-08-21 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Circuit Breaker for a Solar Module |
| CN201327835Y (en) * | 2008-12-12 | 2009-10-14 | 扬州扬杰电子科技有限公司 | Bypass diode module of solar energy power-generating assembly |
| CN101741035A (en) * | 2010-02-08 | 2010-06-16 | 许建方 | Solar junction box |
| CN201663167U (en) * | 2010-03-03 | 2010-12-01 | 无锡尚德太阳能电力有限公司 | Solar battery pack |
| CN202678374U (en) * | 2012-08-01 | 2013-01-16 | 山东迪一电子科技有限公司 | Bypass protective module for solar photovoltaic connecting box |
| CN103560160A (en) * | 2013-11-06 | 2014-02-05 | 无锡清莲新能源科技有限公司 | Solar battery module |
| CN104953859A (en) * | 2015-07-06 | 2015-09-30 | 深圳东科半导体有限公司 | Synchronous diode |
| CN105099361A (en) * | 2014-05-07 | 2015-11-25 | 照宥能源科技股份有限公司 | Solar shading circuit |
| CN105515523A (en) * | 2016-01-15 | 2016-04-20 | 苏州快可光伏电子股份有限公司 | Intelligent optimization device for managing photovoltaic power generation efficiency |
| CN205621747U (en) * | 2015-12-31 | 2016-10-05 | 南通美能得新能源科技股份有限公司 | Circuit board integrated solar module |
| CN106877812A (en) * | 2017-05-03 | 2017-06-20 | 李天万 | A kind of photovoltaic cell group protection circuit of high reliability low-power consumption |
| CN207518546U (en) * | 2017-11-17 | 2018-06-19 | 无锡工赢智能科技有限公司 | A kind of solar cell bypass diode module |
-
2017
- 2017-11-17 CN CN201711147273.9A patent/CN107749742A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080198523A1 (en) * | 2005-05-24 | 2008-08-21 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Circuit Breaker for a Solar Module |
| CN201327835Y (en) * | 2008-12-12 | 2009-10-14 | 扬州扬杰电子科技有限公司 | Bypass diode module of solar energy power-generating assembly |
| CN101741035A (en) * | 2010-02-08 | 2010-06-16 | 许建方 | Solar junction box |
| CN201663167U (en) * | 2010-03-03 | 2010-12-01 | 无锡尚德太阳能电力有限公司 | Solar battery pack |
| CN202678374U (en) * | 2012-08-01 | 2013-01-16 | 山东迪一电子科技有限公司 | Bypass protective module for solar photovoltaic connecting box |
| CN103560160A (en) * | 2013-11-06 | 2014-02-05 | 无锡清莲新能源科技有限公司 | Solar battery module |
| CN105099361A (en) * | 2014-05-07 | 2015-11-25 | 照宥能源科技股份有限公司 | Solar shading circuit |
| CN104953859A (en) * | 2015-07-06 | 2015-09-30 | 深圳东科半导体有限公司 | Synchronous diode |
| CN205621747U (en) * | 2015-12-31 | 2016-10-05 | 南通美能得新能源科技股份有限公司 | Circuit board integrated solar module |
| CN105515523A (en) * | 2016-01-15 | 2016-04-20 | 苏州快可光伏电子股份有限公司 | Intelligent optimization device for managing photovoltaic power generation efficiency |
| CN106877812A (en) * | 2017-05-03 | 2017-06-20 | 李天万 | A kind of photovoltaic cell group protection circuit of high reliability low-power consumption |
| CN207518546U (en) * | 2017-11-17 | 2018-06-19 | 无锡工赢智能科技有限公司 | A kind of solar cell bypass diode module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201663167U (en) | Solar battery pack | |
| TWI631720B (en) | Solar cell assembly | |
| CN104485805B (en) | Dynamic frequency regulation method and system of switching tube | |
| CN106960889A (en) | A kind of solar cell module | |
| CN104467656A (en) | Photovoltaic module junction box with high heat dissipation performance | |
| WO2011130996A1 (en) | Solar cell assembly with multiple junction boxes | |
| CN106685342B (en) | Solar power generation component chip seal pressure formula terminal box and its processing method | |
| CN204558490U (en) | A kind of solar module device realizing cooling and thermo-electric generation | |
| CN104078524A (en) | Intelligent photovoltaic module internally provided with chip | |
| CN207518546U (en) | A kind of solar cell bypass diode module | |
| CN107749742A (en) | A kind of solar energy bypass diode module | |
| CN203983728U (en) | A kind of high power semiconductor lasers that adopts aluminium base encapsulation | |
| CN106253644A (en) | Low-voltage, high-current Mosfet power model | |
| CN110265488B (en) | Photovoltaic cell assembly with embedded photovoltaic bypass switch | |
| CN204497998U (en) | Electric vehicle drives thick film circuit inversion module | |
| CN103532490B (en) | Photovoltaic power source management module | |
| CN203503672U (en) | Package structure for surface condensation solar cells | |
| CN103095179B (en) | Photovoltaic battery array stable-pressure device | |
| CN207834316U (en) | A kind of photovoltaic cell component of novel circuit design | |
| CN206349377U (en) | Preventing hot spot solar cell module | |
| CN111654202A (en) | Bridge arm module, power conversion circuit and power conversion system | |
| CN110190146A (en) | Solar battery string group and solar cell module | |
| CN205122630U (en) | Full high power density LED chip package structure of establishing ties | |
| CN203482156U (en) | Photovoltaic conjunction box and photovoltaic power generation system having same | |
| CN221176214U (en) | Bypass axial diode for improving working current and combined frame thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20240116 Address after: 215612 No.1 Huatai Road, Fenghuang Town, Zhangjiagang City, Suzhou City, Jiangsu Province Applicant after: Kaimei Semiconductor (Suzhou) Co.,Ltd. Address before: 214000 floor 103, block D, information industry science and Technology Park, No. 21, Changjiang Road, Xinwu District, Wuxi City, Jiangsu Province Applicant before: WUXI GONGYING INTELLIGENT TECHNOLOGY CO.,LTD. |