CN106877812A - A kind of photovoltaic cell group protection circuit of high reliability low-power consumption - Google Patents
A kind of photovoltaic cell group protection circuit of high reliability low-power consumption Download PDFInfo
- Publication number
- CN106877812A CN106877812A CN201710304768.1A CN201710304768A CN106877812A CN 106877812 A CN106877812 A CN 106877812A CN 201710304768 A CN201710304768 A CN 201710304768A CN 106877812 A CN106877812 A CN 106877812A
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- Prior art keywords
- semiconductor
- oxide
- metal
- photovoltaic cell
- cell group
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- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 238000007493 shaping process Methods 0.000 claims abstract description 16
- 210000001367 artery Anatomy 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
- 210000003462 vein Anatomy 0.000 claims 1
- 210000004027 cell Anatomy 0.000 abstract description 21
- 210000003850 cellular structure Anatomy 0.000 abstract description 5
- 230000003685 thermal hair damage Effects 0.000 abstract description 5
- 239000003990 capacitor Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of photovoltaic cell group protection circuit of high reliability low-power consumption, including:DC DC reverse voltage protection circuits, DC DC converter circuits, pulse shaping circuit and battery pack bypass protection metal-oxide-semiconductor;Wherein, the battery pack bypass protection metal-oxide-semiconductor is composed in parallel by metal-oxide-semiconductor Q1 and association diode D1; the grid of the metal-oxide-semiconductor Q1 is connected to the pulse shaping circuit; the source electrode of the metal-oxide-semiconductor Q1 is connected to the negative pole of photovoltaic cell group, and the drain electrode of the metal-oxide-semiconductor Q1 is connected to the positive pole of the photovoltaic cell group.This protection circuit is set reliably to work with DC DC reverse voltage protection circuits by using DC DC converter circuits; produce the electric pulse conducting metal-oxide-semiconductor of high duty ratio; to obtain extremely low power consumption; the easy security and reliability for crossing cause thermal damage of common bypass diode is solved the problems, such as, so as to be greatly enhanced use safety and the life-span of photovoltaic cell component.
Description
Technical field
The present invention relates to photovoltaic cell technical field, especially, it is related to a kind of photovoltaic cell group of high reliability low-power consumption
Protection circuit.
Background technology
At present, in the installing and using of photovoltaic module, it is common to use bypass protection diode prevents the heat of photovoltaic module
Spot effect damages photovoltaic cell board component;However, general-purpose diode is big due to the junction voltage of itself, when shielding, by
It is big in power consumption and temperature rise is too big, it is easy to cross cause thermal damage, so as to greatly injure use safety and the life-span of photovoltaic cell component.
The content of the invention
Present invention aim at a kind of photovoltaic cell group protection circuit of high reliability low-power consumption is provided, to solve existing skill
In art, general-purpose diode is big due to the junction voltage of itself, and when shielding, because power consumption is big, temperature rise is too big, easy mistake
Cause thermal damage, so as to greatly injure the use safety of photovoltaic cell component and the technical problem in life-span.
To achieve the above object, the present invention provides a kind of photovoltaic cell group protection circuit of high reliability low-power consumption, including:
DC-DC reverse voltage protection circuits, DC-DC converter circuit, pulse shaping circuit and the battery pack bypass protection being sequentially connected
Metal-oxide-semiconductor;Wherein, the battery pack bypass protection metal-oxide-semiconductor is composed in parallel by metal-oxide-semiconductor Q1 and association diode D1, the metal-oxide-semiconductor Q1
Grid be connected to the pulse shaping circuit, the source electrode of the metal-oxide-semiconductor Q1 is connected to the negative pole of photovoltaic cell group, the MOS
The drain electrode of pipe Q1 is connected to the positive pole of the photovoltaic cell group.
Further, the battery of the photovoltaic cell group is sheltered from heat or light, and the pulse shaping circuit produces conducting dutycycle big
In 95% conduction pulses, the metal-oxide-semiconductor Q1 conductings;When the metal-oxide-semiconductor Q1 is not turned on, the association diode D1 conductings.
The invention has the advantages that:
This protection circuit is set reliably to work with DC-DC reverse voltage protection circuits by using DC-DC converter circuit,
Produce the electric pulse conducting metal-oxide-semiconductor of high duty ratio to obtain extremely low power consumption, the common bypass diode of solution is easy to cross cause thermal damage
Security and reliability problem, so as to be greatly enhanced use safety and the life-span of photovoltaic cell component.
Brief description of the drawings
Below with reference to figure, the present invention is further detailed explanation.The accompanying drawing for constituting the part of the application is used for
A further understanding of the present invention is provided, schematic description and description of the invention is used to explain the present invention, does not constitute
Inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is a kind of structural representation of the photovoltaic cell group protection circuit preferred embodiment of high reliability low-power consumption of the invention
Figure.
Description of reference numerals:
101st, DC-DC reverse voltage protection circuits;102nd, DC-DC converter circuit;103rd, pulse shaping circuit.
Specific embodiment
Embodiments of the invention are described in detail below in conjunction with accompanying drawing.
Fig. 1 is referred to, the photovoltaic cell group that the preferred embodiments of the present invention provide a kind of high reliability low-power consumption is protected
Circuit, including:DC-DC reverse voltage protection circuits 101, the DC-DC converter circuit 102, pulse shaping circuit being sequentially connected
103 and battery pack bypass protection metal-oxide-semiconductor;Wherein, the battery pack bypass protection metal-oxide-semiconductor is by metal-oxide-semiconductor Q1 and association diode D1
Compose in parallel, the grid of the metal-oxide-semiconductor Q1 is connected to the pulse shaping circuit 103, and the source electrode of the metal-oxide-semiconductor Q1 is connected to light
The negative pole of battery pack is lied prostrate, the drain electrode of the metal-oxide-semiconductor Q1 is connected to the positive pole of the photovoltaic cell group.
DC-DC reverse voltage protection circuits 101, when protected photovoltaic cell group normal work, whole DC-DC is reverse
Voltage protection circuit 101 is in backward voltage state, and DC-DC converter circuit 102 can not bear backward voltage, now
DC-DC reverse voltage protection circuits 101 turn off the current path of DC-DC converter circuit 102, and whole reverse voltage drop is acted on
On DC-DC reverse voltage protection circuits 101;When photovoltaic cell group has battery to be sheltered from heat or light, photovoltaic cell group produces backward voltage,
This voltage first turns on the association diode D1 of protection circuit, while DC-DC converter circuit 102 is reversely electric with DC-DC
Voltage protection circuit 101 obtains forward voltage, the start-up circuit of DC-DC lightly conducting at lower voltages, starts DC-DC backward voltages and protects
The lightly conducting of protection circuit 101, the storage capacitor to DC-DC converter circuit 102 charges, as the voltage of storage capacitor is raised, DC-
DC reverse voltage protection circuits 101 are gradually fully on, and DC-DC converter circuit 102 is full of storage capacitor quickly, and DC-DC turns
The output voltage Vout of converter circuit 102 provides the power supply of pulse shaping circuit 103.
Make this protection circuit reliably work using DC-DC converter circuit 102 and DC-DC reverse voltage protection circuits 101
Make, produce the electric pulse conducting metal-oxide-semiconductor of high duty ratio, because the conducting resistance of metal-oxide-semiconductor is extremely low, only several milliohms, whole MOS
The pressure drop of pipe only has 1/10th of general-purpose diode, so its power consumption and temperature rise are extremely low, solves common bypass diode easy
The security and reliability problem of cause thermal damage is crossed, so as to be greatly enhanced use safety and the life-span of photovoltaic cell component.
Preferably, the battery of the photovoltaic cell group is sheltered from heat or light, and the pulse shaping circuit 103 produces conducting dutycycle big
In 95% conduction pulses, the metal-oxide-semiconductor Q1 conductings;When the metal-oxide-semiconductor Q1 is not turned on, the association diode D1 conductings.
Concrete operating principle is as follows:
Fig. 1 is referred to, when photovoltaic cell group normal work, protection circuit reverse voltage bias, DC-DC backward voltages are protected
Protection circuit 101 cuts off the current path of DC-DC converter circuit 102 because backward voltage is acted on, and makes DC-DC converter circuit
102 do not work, thus pulse shaping circuit 103 is because no power supply is without work, the metal-oxide-semiconductor of battery pack bypass protection metal-oxide-semiconductor
Q1 is also just turned off, therewith association diode D1 also reverse-biased shut-offs in parallel, the only leakage current of very little, generally only below 1uA.
When photovoltaic cell group is sheltered from heat or light, outwards do not generate electricity and turn into the load of power consumption, voltage thereon is quickly by rotating forward
It is negative to make protection circuit positively biased, association diode D1 positively biaseds is turned on voltage clamping between about 0.6-1V, it is just on the upper side in voltage
During rising, DC-DC converter circuit 102 obtains forward voltage with DC-DC reverse voltage protection circuits 101, and DC-DC's opens
Dynamic circuit is gradually turned at lower voltages, starts DC-DC reverse voltage protection circuits 101 and is gradually turned on, and gives dc-dc electricity
The storage capacitor on road 102 is charged, and as the voltage of storage capacitor is raised, DC-DC reverse voltage protection circuits 101 are gradually led completely
Logical, DC-DC converter circuit 102 charges and accelerates, and quickly full of storage capacitor, after storage capacitor is fully charged, charges and stops,
The output voltage Vout of DC-DC converter circuit 102 provides the power supply of pulse shaping circuit 103.Pulse shaping circuit 103 is being obtained
Conduction pulses of the generation dutycycle more than 95% turn on metal-oxide-semiconductor Q1 after obtaining supply voltage, and energy storage is electric during metal-oxide-semiconductor Q1 is turned on
The voltage of appearance has a small decline, and after metal-oxide-semiconductor Q1 shut-offs, DC-DC converter circuit 102 starts to be supplemented to storage capacitor again
Until being full of, metal-oxide-semiconductor Q1 is turned on electric charge again, is so constantly repeated.Due to the minimum simply several milliohms of the resistance of metal-oxide-semiconductor Q1 conductings
Nurse, in electric current 10A also only tens millivolts, and due to its dutycycle more than 95%, so whole protection circuit work
Average voltage be sufficiently close to tens millivolts of the conduction voltage drop of Q1, lower than general-purpose diode by about 1/10th, then its temperature low in energy consumption
Rise low, this just it is lower than general-purpose diode a lot, thus safety and reliability is greatly improved.
The preferred embodiments of the present invention are the foregoing is only, is not intended to limit the invention;For the skill of this area
For art personnel, the present invention can have various modifications and variations.It is all within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (2)
1. the photovoltaic cell group protection circuit of a kind of high reliability low-power consumption, it is characterised in that including:
DC-DC reverse voltage protection circuits, DC-DC converter circuit, pulse shaping circuit and the battery pack bypass being sequentially connected
Protection metal-oxide-semiconductor;
Wherein, the battery pack bypass protection metal-oxide-semiconductor is composed in parallel by metal-oxide-semiconductor Q1 and association diode D1, the metal-oxide-semiconductor Q1's
Grid is connected to the pulse shaping circuit, and the source electrode of the metal-oxide-semiconductor Q1 is connected to the negative pole of photovoltaic cell group, the metal-oxide-semiconductor
The drain electrode of Q1 is connected to the positive pole of the photovoltaic cell group.
2. the photovoltaic cell group protection circuit of a kind of high reliability low-power consumption according to claim 1, it is characterised in that:
The battery of the photovoltaic cell group is sheltered from heat or light, and the pulse shaping circuit produces conducting arteries and veins of the conducting dutycycle more than 95%
Punching, the metal-oxide-semiconductor Q1 conductings;When the metal-oxide-semiconductor Q1 is not turned on, the association diode D1 conductings.
Priority Applications (1)
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CN201710304768.1A CN106877812A (en) | 2017-05-03 | 2017-05-03 | A kind of photovoltaic cell group protection circuit of high reliability low-power consumption |
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CN201710304768.1A CN106877812A (en) | 2017-05-03 | 2017-05-03 | A kind of photovoltaic cell group protection circuit of high reliability low-power consumption |
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CN106877812A true CN106877812A (en) | 2017-06-20 |
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CN201710304768.1A Pending CN106877812A (en) | 2017-05-03 | 2017-05-03 | A kind of photovoltaic cell group protection circuit of high reliability low-power consumption |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107749742A (en) * | 2017-11-17 | 2018-03-02 | 无锡工赢智能科技有限公司 | A kind of solar energy bypass diode module |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202004692U (en) * | 2010-12-30 | 2011-10-05 | 保定天威集团有限公司 | Photovoltaic power optimizer |
KR20120017908A (en) * | 2010-08-20 | 2012-02-29 | 김태영 | Dc power sola junction pannel |
CN103560159A (en) * | 2013-11-06 | 2014-02-05 | 无锡清莲新能源科技有限公司 | Protective circuit used for photovoltaic battery pack |
CN206743185U (en) * | 2017-05-03 | 2017-12-12 | 李天万 | A kind of photovoltaic cell group protection circuit of high reliability low-power consumption |
-
2017
- 2017-05-03 CN CN201710304768.1A patent/CN106877812A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120017908A (en) * | 2010-08-20 | 2012-02-29 | 김태영 | Dc power sola junction pannel |
CN202004692U (en) * | 2010-12-30 | 2011-10-05 | 保定天威集团有限公司 | Photovoltaic power optimizer |
CN103560159A (en) * | 2013-11-06 | 2014-02-05 | 无锡清莲新能源科技有限公司 | Protective circuit used for photovoltaic battery pack |
CN206743185U (en) * | 2017-05-03 | 2017-12-12 | 李天万 | A kind of photovoltaic cell group protection circuit of high reliability low-power consumption |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107749742A (en) * | 2017-11-17 | 2018-03-02 | 无锡工赢智能科技有限公司 | A kind of solar energy bypass diode module |
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Application publication date: 20170620 |