CN107734868A - Fine wire circuit and preparation method thereof - Google Patents
Fine wire circuit and preparation method thereof Download PDFInfo
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- CN107734868A CN107734868A CN201711091379.1A CN201711091379A CN107734868A CN 107734868 A CN107734868 A CN 107734868A CN 201711091379 A CN201711091379 A CN 201711091379A CN 107734868 A CN107734868 A CN 107734868A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D101/00—Coating compositions based on cellulose, modified cellulose, or cellulose derivatives
- C09D101/08—Cellulose derivatives
- C09D101/26—Cellulose ethers
- C09D101/28—Alkyl ethers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/0427—Coating with only one layer of a composition containing a polymer binder
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D101/00—Coating compositions based on cellulose, modified cellulose, or cellulose derivatives
- C09D101/08—Cellulose derivatives
- C09D101/26—Cellulose ethers
- C09D101/28—Alkyl ethers
- C09D101/284—Alkyl ethers with hydroxylated hydrocarbon radicals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D105/00—Coating compositions based on polysaccharides or on their derivatives, not provided for in groups C09D101/00 or C09D103/00
- C09D105/12—Agar-agar; Derivatives thereof
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D189/00—Coating compositions based on proteins; Coating compositions based on derivatives thereof
- C09D189/04—Products derived from waste materials, e.g. horn, hoof or hair
- C09D189/06—Products derived from waste materials, e.g. horn, hoof or hair derived from leather or skin
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2355/00—Characterised by the use of homopolymers or copolymers, obtained by polymerisation reactions only involving carbon-to-carbon unsaturated bonds, not provided for in groups C08J2323/00 - C08J2353/00
- C08J2355/02—Acrylonitrile-Butadiene-Styrene [ABS] polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2401/00—Characterised by the use of cellulose, modified cellulose or cellulose derivatives
- C08J2401/08—Cellulose derivatives
- C08J2401/26—Cellulose ethers
- C08J2401/28—Alkyl ethers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2405/00—Characterised by the use of polysaccharides or of their derivatives not provided for in groups C08J2401/00 or C08J2403/00
- C08J2405/12—Agar-agar; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2489/00—Characterised by the use of proteins; Derivatives thereof
- C08J2489/04—Products derived from waste materials, e.g. horn, hoof or hair
- C08J2489/06—Products derived from waste materials, e.g. horn, hoof or hair derived from leather or skin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/05—Alcohols; Metal alcoholates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
- C08K5/098—Metal salts of carboxylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/13—Phenols; Phenolates
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/15—Heterocyclic compounds having oxygen in the ring
- C08K5/151—Heterocyclic compounds having oxygen in the ring having one oxygen atom in the ring
- C08K5/1535—Five-membered rings
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Abstract
The present invention relates to a kind of fine wire circuit and preparation method thereof, preparation method comprises the following steps:(1) slurry is configured, the slurry includes metal ion and reducing agent;(2) slurry is laid in substrate surface;(3) using laser irradiation slurry, metal ion is reduced to metal simple-substance and forms circuit;(4) unreacted slurry is cleaned, produces the fine wire circuit.The preparation method (direct writing technology) of above-mentioned fine wire circuit is to cause chemistry or photochemical reaction occur between base material and slurry in the light action or heat effect of base material and pulp surface using laser, the method for forming circuit or conductive pattern.Direct writing technology is high due to its precision, it is not necessary to mask, suitable for any base material.
Description
Technical field
The present invention relates to manufacture field of electronic elements, more particularly to a kind of fine wire circuit and preparation method thereof.
Background technology
With the popularization of network and the fast development of telecommunications, it is desirable to which electronic terminal product improves constantly its properties of product
While also require its miniaturization, high density interconnection technique (HDI) arises at the historic moment.HDI technologies refer on insulated substrate or
Dielectric is coated on traditional printed circuit board, circuit and intercommunicating pore are formed by chemical plating and plating, finally by multiple
It is superimposed the multilayer printed circuit board formed.Traditional making HDI method mainly has two kinds of subtractive process and addition process.Wherein subtract into
Method is also known as copper etching method, is selectively to remove copper foil in copper-clad plate to obtain the method for conductive pattern;Addition process is
The method that selective deposited metal forms conductive pattern on insulating substrate surface.But either use subtractive process or addition
Method, the processes such as exposure, development, etching will be reused to obtain conductive pattern.These processes not only long flow path, and can shape
Into substantial amounts of contaminated wastewater environment, substantial amounts of resource is expended, based on this present situation, therefore proposes that laser writing technology makes metal wire
The method on road.
The subtracting into of HDI plates or package substrate, half addition, full addition method at present, long flow path, exposure, development, etching consumption
When, consumption material the defects of.
Therefore, prior art has much room for improvement.
The content of the invention
Based on this, it is an object of the invention to provide a kind of preparation method of fine wire circuit.
Specific technical scheme is as follows:
A kind of preparation method of fine wire circuit, comprises the following steps:
(1) slurry is configured, the slurry includes metal ion and reducing agent;
(2) slurry is laid in substrate surface;
(3) using laser irradiation slurry, metal ion is reduced to metal simple-substance and forms circuit;
(4) unreacted slurry is cleaned, produces the fine wire circuit.
In wherein some embodiments, the slurry includes solvent and following component:
In wherein some embodiments, the metal ion be selected from Ivb, Vb, VIb, VIIb, VIII, Ib, IIb, IIIa,
The metallic element ion of IVa, Va race.
In wherein some embodiments, the metal ion be selected from Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Sn, Ag, Pd or
Pt。
In wherein some embodiments, the reducing agent be selected from glyoxalic acid, oxalic acid, formaldehyde, acetic acid, hydrazine hydrate, carbohydrate or
Polysaccharide.
In wherein some embodiments, the viscosity modifier is selected from methylcellulose, hydroxypropyl methyl cellulose, hydroxyl first
Base sodium cellulosate, hydroxyethyl cellulose, starch, gelatin, agar, paraffin, microwax HAS or ring ethanol;It is described anti-oxidant
Agent is selected from:Ascorbic acid, tocopherol, TBHQ or Tea Polyphenols;The solvent be selected from water, methanol, ethanol, propyl alcohol,
N-butanol, isobutanol, acetone, butanone, benzene, carbon tetrachloride, dichloromethane, ether, methyl formate, methyl acetate, acetonitrile, pyrrole
Pyridine, phenol, dimethyl sulfoxide (DMSO) or tetrahydrofuran.
In wherein some embodiments, the spot diameter of the laser is 500nm-50 μm, laser wavelength range 193nm-
1650nm。
In wherein some embodiments, the material of the substrate is selected from glass substrate material, polyimide substrate material, ring
Epoxy resin-based bottom material, acrylonitrile-butadiene-styrene (ABS) base material, FR-4 base materials or aluminium oxide ceramic substrate.
In wherein some embodiments, the preparation method also comprises the following steps:
(5) circuit is thickeied using chemistry or electric plating method.
It is a further object of the present invention to provide a kind of fine wire circuit.
The fine wire circuit that above-mentioned preparation method is prepared.
The principle and advantage of the present invention is as follows:
Laser is caused based on stimulated emission amplification principle, with energy is high, stability is strong, long lifespan, hot spot
Diameter is small, directional lighting and the advantages that Wavelength tunable, is widely used in medical treatment, industrial production, communication and Aero-Space in recent years
Etc..The preparation method (direct writing technology) of above-mentioned fine wire circuit is in base material and the light action of pulp surface using laser
Or heat effect causes chemistry or photochemical reaction occur between base material and slurry, the method for forming circuit or conductive pattern.Directly
Writing technology is high due to its precision, it is not necessary to mask, suitable for any base material.Due to printed circuit board line width line-spacing increasingly
Small, traditional mask method is also more and more difficult for manufacture fine-line, and the diameter of laser facula is only 500nm to 50 μ
M, therefore for traditional method, direct writing technology, which forms conductive pattern, has incomparable advantage.With numerical control skill
The development of art, micron order alignment operation technology is increasingly perfect, makes laser writing technology by as the leading skill of conductive pattern in the future
Art is possibly realized.
In recent years laser writing technology application in many aspects, such as prepares micro- battle array of multilevel hierarchy using laser writing technology
Row, but it is main or using photoresist, exposure, development etc., laser writing technology is intended only as the light source of exposure, utilizes it
The characteristics of hot spot is small overcomes the defects of mask precision is low.Also ultrahigh resolution is made using laser writing technology and can weigh
The mask used again, be using laser energy it is high the characteristics of by heat etch stripping material etch, then using hot spot it is small and
The reversible saturation nonlinearity absorption characteristics of thin-film material will make ultrahigh resolution mask.And fine wire circuit of the present invention
Preparation method is that the formation of the deposition of metal and circuit is unified for into a process, simplifies process, improves production efficiency
The preparation method of above-mentioned fine wire circuit forms circuit using laser writing technology, due to the diameter of laser facula
Nano grade is even up to for some tens of pm, there is incomparable advantage for the line width line-spacing increasingly reduced.Simultaneously
For traditional subtractive process or addition process technique, the pattern transfer technologies such as reuse exposure, development, etching are avoided
And caused a large amount of waste water and caused by environmental pollution and the wasting of resources.And either addition process or subtractive process, its process
It is all tediously long complicated, it is necessary to a large amount of human and material resources, and laser writing technology can greatly improve production efficiency.In addition,
Because laser writing technology does not limit for base material, also there is big advantage for making flexible printed-circuit board.
Embodiment
For the ease of understanding the present invention, the present invention will be described more fully below.But the present invention can be with perhaps
More different form is realized, however it is not limited to embodiment described herein.On the contrary, the purpose for providing these embodiments is to make
Understanding more thorough and comprehensive to the disclosure.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
The arbitrary and all combination of the Listed Items of pass.
A kind of preparation method of fine conductive circuit, comprises the following steps:
Step 1:Slurry is configured, the slurry includes metal ion and reducing agent;It is appreciated that can also include viscosity
Conditioning agent, antioxidant and solvent;
Step 2:The baseplate material of slurry to be smeared is surface-treated to strengthen between baseplate material and plain conductor
Adhesion (for optional step);
Step 3:Laser is irradiated to slurry, makes to react between reducing agent and metal ion to form fine lines
Road;
Step 4:Cleaning removal is carried out to unreacted slurry;
Step 5:The fine-line of formation is electroplated or chemical plating thickeies, forms final line pattern (for can
Select step).
Slurry described in step 1 mainly includes metal ion compound, reducing agent and auxiliary material such as viscosity modifier, resisted
Oxidant and solvent composition.
The metal ion includes following component:Ivb, Vb, VIb, VIIb, VIII, Ib, IIb, IIIa, IVa, Va race
Metallic element ion, is preferably chosen from Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Sn, Ag, Pd, Pt.
The reducing substances includes following component:It can decompose for being excited light irradiation and reduce above-mentioned metal ion,
Refer specifically to glyoxalic acid, oxalic acid, formaldehyde, acetic acid, hydrazine hydrate, carbohydrate and polysaccharide.
The viscosity modifier is following but be not limited only to following material:Methylcellulose, hydroxypropyl methyl cellulose, hydroxyl
Sodium carboxymethylcellulose pyce, hydroxyethyl cellulose, starch, gelatin, agar, paraffin, microwax HAS, ring ethanol etc..
The antioxidant is following but be not limited only to following material:Ascorbic acid, tocopherol, TBHQ,
Tea Polyphenols etc.;
The solvent is following but be not limited only to following material:Water, methanol, ethanol, propyl alcohol, n-butanol, isobutanol, third
Ketone, butanone, benzene, carbon tetrachloride, dichloromethane, ether, methyl formate, methyl acetate, acetonitrile, pyridine, phenol, dimethyl are sub-
Sulfone, tetrahydrofuran etc.;
Baseplate material described in step 2 but it is not limited only to following material:Glass substrate material, polyimide-based ground
Material, epoxy resin base material, acrylonitrile-butadiene-styrene (ABS) (ABS) base material, FR-4 base materials, aluminium oxide ceramics
Substrate etc..
It is preferred that the step 2 is further:
(1) using clear water cleaning substrate surface and to base material progress oil removing.The mode of oil removing has acid deoiling, alkalescence
Oil removing and electrolytic degreasing, different oil removing modes should be selected according to different base materials;
(2) expansion wetting (nonessential it is preferred that) is carried out to substrate surface using organic solvent;
(3) microetch is carried out to substrate surface using oxidant or heating is simultaneously ultrasonic while microetch or uses plasma
Body carries out surface coarsening (nonessential it is preferred that);
(4) substrate surface is cleaned and dried using clear water.
Its principles of chemistry of content described in step 3 are:It is laser is made going back in slurry that slurry, which is irradiated, using laser
Former agent composition is heated to be decomposed into activity reducing agent or photochemical reaction occurs and form activity reducing agent, activity reducing agent and metal from
Son reacts generation metal simple-substance so as to form circuit.
The step 5 is further:The circuit for being formed laser direct-writing using the method for plating or chemical plating, which is thickeied, to be increased
The reliability on ledger line road.It is preferred that the thickening mode used is acidiccopper plating, main component be cupric sulfate pentahydrate,
Sulfuric acid and other additives (such as sodium polydithio-dipropyl sulfonate, polyethylene glycol, organic ammonium salt).
Embodiment 1
Fine wire circuit is made using copper acetate monohydrate and acetic acid mixed slurry, is comprised the following steps that:
(1) using copper acetate monohydrate, acetic acid mixing and add methylated cellulose aqueous solution and form slurry (viscosity is
10.2Pa·s):Copper acetate monohydrate 620g/L, acetic acid 130g/L, hydroxymethyl cellulose 8g/L, antioxidant (ascorbic acid)
10g/L;
(2) use naoh treatment glass substrate surface and carry out Ultrasonic Heating processing 30min;
(3) slurry is uniformly smeared (slurry thickness is about 100 μm), and irradiate to form line with laser on the glass substrate
Road (spot diameter of laser is 500nm-50 μm, laser wavelength range 193nm-1650nm);
(4) glass substrate is dried, unnecessary slurry is washed;
(5) torn after clinging circuit pack using adhesive tape, do not find dry linting.
Embodiment 2
Fine wire circuit is made using titanium acetylacetone and ethanol, forms the circuit that titanium is flexible base material, specifically
Step is as follows:
(1) it is mixed to form slurry (viscosity 9.52Pas) using titanium acetylacetone and ethanol and isopropyl alcohol and water:Acetyl
Acetone titanium 260g/L, reducing agent ethanol and isopropanol are respectively 50 and 60g/L, viscosity modifier (hydroxymethyl cellulose) 10g/L,
Antioxidant (ascorbic acid) 15g/L;
(2) corona treatment PI flexible base materials are used, and are rinsed with clear water;
(3) slurry is uniformly applied in PI substrates to (slurry thickness is about 100 μm), is irradiated to form circuit with laser;
(4) additional size in substrate is removed.
Embodiment 3
Fine wire circuit is made on epoxy resin using ferrous oxalate and acetonitrile, is comprised the following steps that:
(1) ferrous oxalate, acetonitrile and water are used as slurry (viscosity 6.6Pas):Ferrous oxalate 150g/L (oxalic acid
Root is as reducing agent), viscosity modifier (gelatin) 15g/L, antioxidant (Tea Polyphenols) 12g/L;
(2) surface coarsening is carried out to epoxy resin base plate using chromic acid and sulfuric acid, then with clear water cleaning, drying;
(3) slurry is uniformly applied in epoxy resin substrate to (slurry thickness is about 100 μm), is irradiated to form line with laser
Road (spot diameter of laser is 500nm-50 μm, laser wavelength range 193nm-1650nm);
(4) dried after removing slurry unnecessary in substrate;
(5) circuit to complete is thickeied using chemical nickel plating.
Embodiment 4
Fine wire circuit is made in ABS substrates using cobalt acetate and acetic acid, is comprised the following steps that:
(1) slurry (viscosity 8Pas) is made using cobalt acetate and acetic acid and water:Cobalt acetate 350g/L, acetic acid 130g/
L, viscosity modifier (agar) 3g/L, antioxidant (TBHQ) 16g/L;
(2) surface coarsening is carried out to epoxy resin base plate using chromic acid and sulfuric acid, dried after then being cleaned with clear water;
(3) slurry is uniformly applied in epoxy resin substrate to (slurry thickness is about 100 μm), is irradiated to form line with laser
Road (spot diameter of laser is 500nm-50 μm, laser wavelength range 193nm-1650nm);
(4) dried after removing slurry unnecessary in substrate, circuit is formed after completing.
Embodiment 5
Fine wire circuit is made on epoxy resin substrate using copper acetate monohydrate and acetic acid, specific steps are such as
Under:
(1) add water using copper acetate monohydrate and acetic acid and methylcellulose forms slurry (viscosity 9.84Pas):
Copper acetate monohydrate 400g/L, acetic acid 100g/L, viscosity modifier (hydroxyethyl cellulose) 15g/L, antioxidant (Vitamin C
Acid) 10g/L.
(2) surface coarsening is carried out to epoxy resin base plate using chromic acid and sulfuric acid, dried after being cleaned with water;
(3) slurry is uniformly applied in epoxy resin substrate to (slurry thickness is about 100 μm), is irradiated to be formed with laser
Circuit (spot diameter of laser is 500nm-50 μm, laser wavelength range 193nm-1650nm);
(4) dried after removing slurry unnecessary in substrate, circuit is formed after completing.
Laser-formed fine-line is glued using 3M adhesive tapes according to tape test method and pullled, have no dry linting phenomenon and circuit
Obscission occurs.Illustrate that fine wire circuit and the substrate caking power of above method preparation are good.And the circuit electric conductivity is good
Well, catalytic capability is strong, can be electroplated or chemical plating thickeies.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of preparation method of fine wire circuit, it is characterised in that comprise the following steps:
(1) slurry is configured, the slurry includes metal ion and reducing agent;
(2) slurry is laid in substrate surface;
(3) using laser irradiation slurry, metal ion is reduced to metal simple-substance and forms circuit;
(4) unreacted slurry is cleaned, produces the fine wire circuit.
2. preparation method according to claim 1, it is characterised in that the slurry includes solvent and following component:
3. preparation method according to claim 2, it is characterised in that the metal ion be selected from Ivb, Vb, VIb, VIIb,
The metallic element ion of VIII, Ib, IIb, IIIa, IVa, Va race.
4. preparation method according to claim 3, it is characterised in that the metal ion be selected from Ti, Cr, Mn, Fe, Co,
Ni, Cu, Zn, Sn, Ag, Pd or Pt.
5. preparation method according to claim 2, it is characterised in that the reducing agent be selected from glyoxalic acid, oxalic acid, formaldehyde,
Acetic acid, hydrazine hydrate, carbohydrate or polysaccharide.
6. preparation method according to claim 2, it is characterised in that the viscosity modifier is selected from methylcellulose, hydroxyl
Propyl methocel, sodium cellulose glycolate, hydroxyethyl cellulose, starch, gelatin, agar, paraffin, microwax HAS
Or ring ethanol;The antioxidant is selected from:Ascorbic acid, vitamin C, tocopherol, TBHQ or Tea Polyphenols;It is described
Solvent be selected from water, methanol, ethanol, propyl alcohol, n-butanol, isobutanol, acetone, butanone, benzene, carbon tetrachloride, dichloromethane, ether,
Methyl formate, methyl acetate, acetonitrile, pyridine, phenol, dimethyl sulfoxide (DMSO) or tetrahydrofuran.
7. according to the preparation method described in claim any one of 1-6, it is characterised in that the spot diameter of the laser is
500nm-50 μm, laser wavelength range 193nm-1650nm.
8. according to the preparation method described in claim any one of 1-6, it is characterised in that the material of the substrate is selected from glass base
Bottom material, polyimide substrate material, epoxy resin base material, acrylonitrile-butadiene-styrene (ABS) base material, FR-4 bases
Bottom material or aluminium oxide ceramic substrate.
9. according to the preparation method described in claim any one of 1-6, it is characterised in that also comprise the following steps:
(5) circuit is thickeied using chemistry or electric plating method.
10. the fine wire circuit that any one of the claim 1-9 preparation methods are prepared.
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Cited By (1)
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CN112958765A (en) * | 2021-02-25 | 2021-06-15 | 哈尔滨工业大学 | Laser-assisted conformal 3D printing method for complex curved surface special-shaped structure |
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CN103249255A (en) * | 2013-04-17 | 2013-08-14 | 复旦大学 | Method for directly preparing conducting circuit on resin baseplate |
US20140238833A1 (en) * | 2013-02-26 | 2014-08-28 | C3Nano Inc. | Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks |
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US20030146019A1 (en) * | 2001-11-22 | 2003-08-07 | Hiroyuki Hirai | Board and ink used for forming conductive pattern, and method using thereof |
CN101768386A (en) * | 2009-01-07 | 2010-07-07 | 清华大学 | Ink and method adopting ink to prepare conductive line |
US20140238833A1 (en) * | 2013-02-26 | 2014-08-28 | C3Nano Inc. | Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks |
CN103249255A (en) * | 2013-04-17 | 2013-08-14 | 复旦大学 | Method for directly preparing conducting circuit on resin baseplate |
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CN112958765A (en) * | 2021-02-25 | 2021-06-15 | 哈尔滨工业大学 | Laser-assisted conformal 3D printing method for complex curved surface special-shaped structure |
CN112958765B (en) * | 2021-02-25 | 2022-01-21 | 哈尔滨工业大学 | Laser-assisted conformal 3D printing method for complex curved surface special-shaped structure |
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