CN107732870A - A kind of configurable thermal-shutdown circuit applied to Switching Power Supply - Google Patents

A kind of configurable thermal-shutdown circuit applied to Switching Power Supply Download PDF

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Publication number
CN107732870A
CN107732870A CN201710771925.XA CN201710771925A CN107732870A CN 107732870 A CN107732870 A CN 107732870A CN 201710771925 A CN201710771925 A CN 201710771925A CN 107732870 A CN107732870 A CN 107732870A
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China
Prior art keywords
pmos
nmos tube
resistance
drain electrode
circuit
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CN201710771925.XA
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CN107732870B (en
Inventor
宋奎鑫
莫艳图
孔瀛
姜爽
喻贤坤
李卓
王佳
王莉
穆辛
徐小倩
彭斌
樊旭
刘松林
王潇潇
王艳翔
毛鹤莉
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A kind of configurable thermal-shutdown circuit applied to Switching Power Supply, including biasing circuit, excess temperature detection module and trim circuit.Biasing circuit obtains a bias current unrelated with supply voltage and exported to give excess temperature detection module under supply voltage effect.The voltage that trims that circuit receives supply voltage and outside input is trimmed, acquisition trims signal, exports and give excess temperature detection module.Excess temperature detection module receives supply voltage and bias current, according to signal is trimmed, the size of detection resistance in excess temperature detection module is adjusted, so as to adjust warm spot；When environment temperature exceeded warm spot, the overheat protector signal generating state upset to Switching Power Supply drive module is exported, so as to turn off switching power circuit.Circuit can carry out the configuration of warm spot according to actual application environment, and the precision for crossing warm spot configuration can be set.The present invention can be according to the application and configuration precision that need, to excess temperature click-through Mobile state configuration, to improve thermal-shutdown circuit of application environment.

Description

A kind of configurable thermal-shutdown circuit applied to Switching Power Supply
Technical field
The present invention relates to a kind of thermal-shutdown circuit, particularly it is a kind of be applied to wider range in Switching Power Supply can Thermal-shutdown circuit is configured, belongs to protective circuit of switch power source field.
Background technology
The power consumption of Switching Power Supply is general very low, but after the adjustment pipe in circuit is packaged, as a heating member Part, it is possible that long term high temperature, causes to damage to chip in the case of band carries, so needing to design thermal-shutdown circuit, prevent Fire damage only is caused to other positions of chip, or even causes bigger harm.
The warm spot excessively of existing thermal-shutdown circuit can not change according to the needs of application environment, cause thermal-shutdown circuit Application is limited.
The content of the invention
The technology of the present invention solves problem：Overcome the deficiencies in the prior art, there is provided a kind of applied to Switching Power Supply Configurable thermal-shutdown circuit, the present invention can need, to excess temperature click-through Mobile state configuration, to improve according to application environment The application and configuration precision of warm protection circuit.
The present invention technical solution be：A kind of configurable thermal-shutdown circuit applied to Switching Power Supply, including it is inclined Circuits, excess temperature detection module and trim circuit；
Biasing circuit obtains a bias current unrelated with supply voltage, exported to excess temperature under supply voltage effect Detection module, the supply voltage are the operating voltage of Switching Power Supply；
Trim that circuit receives supply voltage and outside input trims voltage, and signal is trimmed according to trimming voltage and obtaining, defeated Go out and give excess temperature detection module；
Excess temperature detection module receive supply voltage, biasing circuit output bias current and trim circuit output trim letter Number, the bias current exported according to the supply voltage and biasing circuit, high level or low is exported to Switching Power Supply drive module The overheat protector signal of level；According to the size for trimming signal, adjusting detection resistance in excess temperature detection module, so as to adjust Cross warm spot；When environment temperature exceeded warm spot, export and turned over to the overheat protector signal generating state of Switching Power Supply drive module Turn, so as to turn off switching power circuit.
The biasing circuit includes PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5, PMOS M6, NMOS tube M15, NMOS tube M16, NMOS tube M17, resistance R1, resistance R2 and resistance R3；
PMOS M1, PMOS M3, PMOS M5 source electrode are all connected with supply voltage VDD, PMOS M1 drain electrode connection PMOS M2 source electrode, PMOS M3 drain electrode connection PMOS M4 source electrode, PMOS M5 drain electrode connection PMOS M6's Source electrode, PMOS M6 grid and drain electrode connect；
PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5 make after being connected with PMOS M6 grid For the output end of biasing circuit；
PMOS M2 drain electrode connects resistance R1 one end and NMOS tube M16 grid simultaneously, and PMOS M4 drain electrode is same When connect NMOS tube M16 drain electrode and NMOS tube M17 grid, the resistance R1 other end connects NMOS tube M15 drain electrode simultaneously And grid, resistance R2 one end connect NMOS tube M15 source electrode and NMOS tube M16 source electrode, resistance R2 other ends ground connection simultaneously； PMOS M6 drain electrode is connected with NMOS tube M17 drain electrode, and NMOS tube M17 source electrode is grounded by resistance R3.
The excess temperature detection module include PMOS M7, PMOS M8, PMOS M9, PMOS M10, PMOS M11, PMOS M12, PMOS M18, NMOS tube M13, NMOS tube M14, NMOS tube M19, NMOS tube M20, NPN pipe N1, resistance R4, electricity Hinder R5 and adjustable resistance string RS；
PMOS M7, PMOS M8, PMOS M9 and PMOS M10 grid are connected with the output end of biasing circuit, PMOS M7, PMOS M9, PMOS M11 and PMOS M18 source electrode are all connected with supply voltage VDD, PMOS M7 drain electrode It is connected with PMOS M8 source electrode, PMOS M9 drain electrode is connected with PMOS M10 source electrode, and PMOS M8 drain electrode connects simultaneously Connecting resistance R4 one end and NPN pipes N1 base stage, resistance R4 other end connection adjustable resistance string RS one end, adjustable resistance string The RS other end connects NMOS tube M20 drain electrode and resistance R5 one end simultaneously, and NMOS tube M20 source electrode and resistance R5's is another End ground connection；NPN pipes N1 colelctor electrode connection PMOS M10 drain electrode, NPN pipes N1 grounded emitter；PMOS M11, PMOS After pipe M12, NMOS tube M13 are connected with NMOS tube M14 grid, the drain electrode with PMOS M10 is connected, PMOS M12 source Pole connection PMOS M11 drain electrode, NMOS tube M13 source electrode connection NMOS tube M14 drain electrode, NMOS tube M14 source ground, Output end OTP after PMOS M12 and NMOS tube M13 drain electrode connection as excess temperature detection module；PMOS M18 grid and NMOS tube M19 grid is connected to the output end OTP of excess temperature detection module, PMOS M18 drain electrode and NMOS tube M19 leakage Pole connects NMOS tube M20 grid connection, NMOS tube M19 source ground simultaneously.
The adjustable resistance string RS includes the sub- resistive module of m groups, the sub- resistive module composition all same of each group, i-th group of son electricity Resistance module includes NMOS tube M2i and resistance R2i, and NMOS tube M2i grid connection trims the signal that trims of circuit, resistance R2i It is connected between NMOS tube M2i drain electrode and source electrode, NMOS tube M21 drain electrode and NMOS tube M2m source electrode are as adjustable resistance String RS both ends, work as i>When 1, NMOS tube M2i drain electrode connects NMOS tube M2 (i-1) source electrode, i=1,2 ... ..., m simultaneously.
The resistance of the resistance R2i is more than 10 times of NMOS tube M2i conducting resistances.
The circuit that trims is made up of the m sub- trimming module of structure identical, i-th sub- trimming module include trimming PAD, Schmidt trigger SMIT, NMOS tube M30, resistance R30, resistance R31 and fuse resistor Rfuse；
The input for trimming voltage and Schmidt trigger SMIT being connected to by trimming PAD of outside input, Schmidt touch Device SMIT output end connection NMOS tube M30 grid is sent out, NMOS tube M30 drain electrode connects fuse resistor R simultaneouslyfuseOne end With resistance R30 one end, fuse resistor RfuseOther end connection supply voltage, on the one hand the resistance R30 other end is used as i-th The output end of individual sub- trimming module, signal is trimmed to i-th group of sub- resistive module output, is on the other hand grounded by resistance R31.
The present invention compared with prior art the advantages of be：
(1) compared with traditional thermal-shutdown circuit, the present invention utilizes temperature detection principle, by trimming the regulation of electrical circuit mistake Resistance in warm detection module, and then the dynamic configuration to overheat protector point is realized, improve thermal-shutdown circuit applies model Enclose.
(2) adjustable resistance string of the present invention is made up of multigroup sub- resistive module, and every group of sub- resistive module acceptor trims circuit control System, it is possible to achieve the access and disconnection of corresponding resistance, so as to improve the configuration precision of overheat protector point.
Brief description of the drawings
Fig. 1 is the system block diagram of configurable thermal-shutdown circuit；
Fig. 2 is thermal-shutdown circuit schematic diagram of the present invention；
Fig. 3 is the configurable resistance string schematic diagram of the present invention；
Fig. 4 is that the present invention trims every sub- trimming module schematic diagram in circuit.
Embodiment
Fig. 1 is the system block diagram of thermal-shutdown circuit of the present invention, including biasing circuit, excess temperature detection module and trims electricity Road, biasing circuit obtain a bias current unrelated with supply voltage under supply voltage effect, export and detect mould to excess temperature Block, the supply voltage are the operating voltage of Switching Power Supply.Trim that circuit receives supply voltage and outside input trims voltage, Signal is trimmed according to voltage acquisition is trimmed, exports and gives excess temperature detection module.Excess temperature detection module receives supply voltage, biasing circuit The bias current of output and trim circuit output trim signal, the biased electrical exported according to the supply voltage and biasing circuit Stream, high level or low level overheat protector signal are exported to Switching Power Supply drive module；Signal is trimmed according to described, was adjusted The size of detection resistance in warm detection module, so as to adjust warm spot；When environment temperature exceeded warm spot, export and give switch electricity The overheat protector signal generating state upset of source drive module, so as to turn off switching power circuit.
Biasing circuit include PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5, PMOS M6, NMOS tube M15, NMOS tube M16, NMOS tube M17, resistance R1, resistance R2 and resistance R3；
PMOS M1, PMOS M3, PMOS M5 source electrode are all connected with supply voltage VDD, PMOS M1 drain electrode connection PMOS M2 source electrode, PMOS M3 drain electrode connection PMOS M4 source electrode, PMOS M5 drain electrode connection PMOS M6's Source electrode, PMOS M6 grid and drain electrode connect；
PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5 make after being connected with PMOS M6 grid For the output end of biasing circuit；
PMOS M2 drain electrode connects resistance R1 one end and NMOS tube M16 grid simultaneously, and PMOS M4 drain electrode is same When connect NMOS tube M16 drain electrode and NMOS tube M17 grid, the resistance R1 other end connects NMOS tube M15 drain electrode simultaneously And grid, resistance R2 one end connect NMOS tube M15 source electrode and NMOS tube M16 source electrode, resistance R2 other ends ground connection simultaneously； PMOS M6 drain electrode is connected with NMOS tube M17 drain electrode, and NMOS tube M17 source electrode is grounded by resistance R3.
Excess temperature detection module includes PMOS M7, PMOS M8, PMOS M9, PMOS M10, PMOS M11, PMOS M12, PMOS M18, NMOS tube M13, NMOS tube M14, NMOS tube M19, NMOS tube M20, NPN pipe N1, resistance R4, resistance R5 with And adjustable resistance string RS.
PMOS M7, PMOS M8, PMOS M9 and PMOS M10 grid are connected with the output end of biasing circuit, PMOS M7, PMOS M9, PMOS M11 and PMOS M18 source electrode are all connected with supply voltage VDD, PMOS M7 drain electrode It is connected with PMOS M8 source electrode, PMOS M9 drain electrode is connected with PMOS M10 source electrode, and PMOS M8 drain electrode connects simultaneously Connecting resistance R4 one end and NPN pipes N1 base stage, resistance R4 other end connection adjustable resistance string RS one end, adjustable resistance string The RS other end connects NMOS tube M20 drain electrode and resistance R5 one end simultaneously, and NMOS tube M20 source electrode and resistance R5's is another End ground connection；NPN pipes N1 colelctor electrode connection PMOS M10 drain electrode, NPN pipes N1 grounded emitter；PMOS M11, PMOS After pipe M12, NMOS tube M13 are connected with NMOS tube M14 grid, the drain electrode with PMOS M10 is connected, PMOS M12 source Pole connection PMOS M11 drain electrode, NMOS tube M13 source electrode connection NMOS tube M14 drain electrode, NMOS tube M14 source ground, Output end OTP after PMOS M12 and NMOS tube M13 drain electrode connection as excess temperature detection module；PMOS M18 grid and NMOS tube M19 grid is connected to the output end OTP of excess temperature detection module, PMOS M18 drain electrode and NMOS tube M19 leakage Pole connects NMOS tube M20 grid connection, NMOS tube M19 source ground simultaneously.
Specific annexation is as shown in Figure 2.
In biasing circuit, PMOS M4 and M5 drain voltage is identical, and two branch currents are equal, by adjusting resistance R1 Value or NMOS tube M15 breadth length ratio be adjustable bias current size.
NPN triode N1 VBE voltages and temperature is inversely proportional, when temperature exceeded warm spot, under N1 VBE threshold values Drop, N1 base voltage is constant, N1 collector current increase, by being made up of PMOS M11, M12 and NMOS tube M13, M14 Phase inverter after, output signal OTP is changed into high level (i.e. generating state overturn), turns off switching power circuit, and M20 is closed, M8 Drain voltage rise；After temperature declines, N1 VBE threshold values rise, because M8 drain voltage has built up, so that Output signal OTP is changed into low level and hysteresis be present.
Fig. 3 is adjustable resistance string RS specific implementation circuit, including the sub- resistive module of m group identicals, i-th group of sub- resistive mode Block includes NMOS tube M2i and resistance R2i, and NMOS tube M2i grid connection trims the signal that trims of circuit, resistance R2i connections Between NMOS tube M2i drain electrode and source electrode, NMOS tube M21 drain electrode and NMOS tube M2m source electrode are as adjustable resistance string RS Both ends, work as i>When 1, NMOS tube M2i drain electrode connects NMOS tube M2 (i-1) source electrode, i=1,2 ... ..., m simultaneously.NMOS Pipe is as switching tube, and when it is high level to trim signal, NMOS tube conducting, its resistance in parallel is short-circuited, that is, reduces RS electricity Resistance.Resistance R2i resistance should be arranged to more than ten times of NMOS tube M2i conducting resistances.Increase m number, can obtain more Accurately temperature spot is adjusted.
Trim circuit to be made up of the m sub- trimming module of structure identical, as shown in figure 4, i-th of sub- trimming module includes repairing Adjust PAD (Trimming PAD), Schmidt trigger SMIT, NMOS tube M30, resistance R30, resistance R31 and fuse resistor Rfuse。 The input for trimming voltage and Schmidt trigger SMIT being connected to by trimming PAD of outside input, Schmidt trigger SMIT Output end connection NMOS tube M30 grid, NMOS tube M30 drain electrode connects fuse resistor R simultaneouslyfuseOne end and resistance R30 one end, fuse resistor RfuseOther end connection supply voltage, on the one hand the resistance R30 other end repaiies as i-th of son The output end Trimming OUT of mode transfer block, signal is trimmed to i-th group of sub- resistive module output, on the other hand passes through resistance R31 Ground connection.
The voltage that trims of outside input carries out waveform shaping processing by Schmidt trigger, not to trimming PAD power-up Under the voltage condition of source, M30 cut-offs, Trimming OUT terminal mouths are the high level for being similar to supply voltage；Add when trimming PAD ports After supply voltage, M30 conductings, high current flows through, and directly fuse fuse resistor Rfuse, now Trimming OUT terminals mouth fixed For low level.
If desired increase the temperature spot of overheat protector, overheat protector point can be increased by reducing RS resistance value, equally, Overheat protector point can be reduced by increasing RS resistance value.
Excess temperature detection module of the present invention is designed according to the triode VBE negative temperature characteristics presented, trims circuit The regulation of detection resistance size is realized by controlling internal fuse resistance whether to fuse, triode is adjusted by adjusting detection resistance Base voltage, so as to realize the adjustment of warm spot.
Advantage of the invention is that different users can be detected according to the application environment of circuit by trimming circuit and excess temperature The cooperation of module, realize to crossing warm spot configuration, to reach to the maximum protection of circuit, avoid switching power circuit permanent worker The damage or damage of chip are caused in high temperature environments.
The content not being described in detail in description of the invention belongs to the known technology of professional and technical personnel in the field.

Claims (6)

  1. A kind of 1. configurable thermal-shutdown circuit applied to Switching Power Supply, it is characterised in that：Detected including biasing circuit, excess temperature Module and trim circuit；
    Biasing circuit obtains a bias current unrelated with supply voltage under supply voltage effect, exports and is detected to excess temperature Module, the supply voltage are the operating voltage of Switching Power Supply；
    Trim that circuit receives supply voltage and outside input trims voltage, and signal is trimmed according to trimming voltage and obtaining, export to Excess temperature detection module；
    Excess temperature detection module receive supply voltage, biasing circuit output bias current and trim circuit output trim signal, The bias current exported according to the supply voltage and biasing circuit, high level or low level are exported to Switching Power Supply drive module Overheat protector signal；According to the size for trimming signal, adjusting detection resistance in excess temperature detection module, so as to adjust excess temperature Point；When environment temperature exceeded warm spot, the overheat protector signal generating state upset to Switching Power Supply drive module is exported, from And turn off switching power circuit.
  2. A kind of 2. configurable thermal-shutdown circuit applied to Switching Power Supply according to claim 1, it is characterised in that：Institute Stating biasing circuit includes PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5, PMOS M6, NMOS tube M15, NMOS tube M16, NMOS tube M17, resistance R1, resistance R2 and resistance R3；
    PMOS M1, PMOS M3, PMOS M5 source electrode are all connected with supply voltage VDD, PMOS M1 drain electrode connection PMOS Pipe M2 source electrode, PMOS M3 drain electrode connection PMOS M4 source electrode, PMOS M5 drain electrode connection PMOS M6 source electrode, PMOS M6 grid and drain electrode connect；
    PMOS M1, PMOS M2, PMOS M3, PMOS M4, PMOS M5 are used as inclined after being connected with PMOS M6 grid The output end of circuits；
    PMOS M2 drain electrode connects resistance R1 one end and NMOS tube M16 grid simultaneously, and PMOS M4 drain electrode connects simultaneously NMOS tube M16 drain electrode and NMOS tube M17 grid are connect, the resistance R1 other end connects NMOS tube M15 drain electrode and grid simultaneously Pole, resistance R2 one end connect NMOS tube M15 source electrode and NMOS tube M16 source electrode, resistance R2 other ends ground connection simultaneously；PMOS Pipe M6 drain electrode is connected with NMOS tube M17 drain electrode, and NMOS tube M17 source electrode is grounded by resistance R3.
  3. A kind of 3. configurable thermal-shutdown circuit applied to Switching Power Supply according to claim 1, it is characterised in that：Institute State excess temperature detection module include PMOS M7, PMOS M8, PMOS M9, PMOS M10, PMOS M11, PMOS M12, PMOS M18, NMOS tube M13, NMOS tube M14, NMOS tube M19, NMOS tube M20, NPN pipe N1, resistance R4, resistance R5 and can Adjust resistance string RS；
    PMOS M7, PMOS M8, PMOS M9 and PMOS M10 grid are connected with the output end of biasing circuit, PMOS Pipe M7, PMOS M9, PMOS M11 and PMOS M18 source electrode are all connected with supply voltage VDD, PMOS M7 drain electrode with PMOS M8 source electrode connection, PMOS M9 drain electrode are connected with PMOS M10 source electrode, and PMOS M8 drain electrode connects simultaneously Resistance R4 one end and NPN pipes N1 base stage, resistance R4 other end connection adjustable resistance string RS one end, adjustable resistance string RS The other end simultaneously connect NMOS tube M20 drain electrode and resistance R5 one end, NMOS tube M20 source electrode and the resistance R5 other end Ground connection；NPN pipes N1 colelctor electrode connection PMOS M10 drain electrode, NPN pipes N1 grounded emitter；PMOS M11, PMOS After M12, NMOS tube M13 are connected with NMOS tube M14 grid, the drain electrode with PMOS M10 is connected, PMOS M12 source electrode Connection PMOS M11 drain electrode, NMOS tube M13 source electrode connection NMOS tube M14 drain electrode, NMOS tube M14 source ground, Output end OTP after PMOS M12 and NMOS tube M13 drain electrode connection as excess temperature detection module；PMOS M18 grid and NMOS tube M19 grid is connected to the output end OTP of excess temperature detection module, PMOS M18 drain electrode and NMOS tube M19 leakage Pole connects NMOS tube M20 grid connection, NMOS tube M19 source ground simultaneously.
  4. A kind of 4. configurable thermal-shutdown circuit applied to Switching Power Supply according to claim 3, it is characterised in that：Institute Stating adjustable resistance string RS includes the sub- resistive module of m groups, the sub- resistive module composition all same of each group, and i-th group of sub- resistive module includes NMOS tube M2i and resistance R2i, NMOS tube M2i grid connection trim the signal that trims of circuit, and resistance R2i is connected to NMOS Between pipe M2i drain electrode and source electrode, the both ends of NMOS tube M21 drain electrode and NMOS tube M2m source electrode as adjustable resistance string RS, Work as i>When 1, NMOS tube M2i drain electrode connects NMOS tube M2 (i-1) source electrode, i=1,2 ... ..., m simultaneously.
  5. A kind of 5. configurable thermal-shutdown circuit applied to Switching Power Supply according to claim 4, it is characterised in that：Institute The resistance for stating resistance R2i is more than 10 times of NMOS tube M2i conducting resistances.
  6. A kind of 6. configurable thermal-shutdown circuit applied to Switching Power Supply according to claim 4, it is characterised in that：Institute State and trim circuit and be made up of the m sub- trimming module of structure identical, i-th of sub- trimming module includes trimming PAD, schmidt trigger Device SMIT, NMOS tube M30, resistance R30, resistance R31 and fuse resistor Rfuse；
    The input for trimming voltage and Schmidt trigger SMIT being connected to by trimming PAD of outside input, Schmidt trigger SMIT output end connection NMOS tube M30 grid, NMOS tube M30 drain electrode connect fuse resistor R simultaneouslyfuseOne end and electricity Hinder R30 one end, fuse resistor RfuseOther end connection supply voltage, the resistance R30 other end is on the one hand as i-th of son The output end of trimming module, signal is trimmed to i-th group of sub- resistive module output, is on the other hand grounded by resistance R31.
CN201710771925.XA 2017-08-31 2017-08-31 A kind of configurable thermal-shutdown circuit applied to Switching Power Supply Active CN107732870B (en)

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Cited By (5)

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CN109245051A (en) * 2018-08-28 2019-01-18 出门问问信息科技有限公司 A kind of supply convertor
CN111562806A (en) * 2020-05-18 2020-08-21 西安拓尔微电子有限责任公司 Reference source circuit for realizing low temperature coefficient voltage and current on CMOS (complementary metal oxide semiconductor) process
CN113884208A (en) * 2021-09-09 2022-01-04 芯原微电子（成都）有限公司 High-precision over-temperature detection circuit
CN113884209A (en) * 2021-09-09 2022-01-04 芯原微电子（成都）有限公司 Low-power consumption over-temperature detection circuit
CN114489220A (en) * 2022-01-04 2022-05-13 电子科技大学 Low-power-consumption over-temperature protection circuit without operational amplifier and reference

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CN104993454A (en) * 2015-06-29 2015-10-21 中国电子科技集团公司第五十八研究所 Over-temperature protection circuit
CN104967096A (en) * 2015-07-29 2015-10-07 电子科技大学 Over-temperature protection circuit used for high-side power switch
CN104967094A (en) * 2015-07-29 2015-10-07 电子科技大学 Over-temperature protection circuit
CN105159391A (en) * 2015-10-22 2015-12-16 杭州士兰微电子股份有限公司 Current source and oscillating circuit utilizing same
CN105630060A (en) * 2015-12-11 2016-06-01 古道雄 LED driving chip and over-temperature protection point adjusting unit thereof

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* Cited by examiner, † Cited by third party
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CN109245051A (en) * 2018-08-28 2019-01-18 出门问问信息科技有限公司 A kind of supply convertor
CN111562806A (en) * 2020-05-18 2020-08-21 西安拓尔微电子有限责任公司 Reference source circuit for realizing low temperature coefficient voltage and current on CMOS (complementary metal oxide semiconductor) process
CN111562806B (en) * 2020-05-18 2024-06-04 拓尔微电子股份有限公司 Reference source circuit for realizing low temperature coefficient voltage and current in CMOS process
CN113884208A (en) * 2021-09-09 2022-01-04 芯原微电子（成都）有限公司 High-precision over-temperature detection circuit
CN113884209A (en) * 2021-09-09 2022-01-04 芯原微电子（成都）有限公司 Low-power consumption over-temperature detection circuit
CN113884208B (en) * 2021-09-09 2023-10-10 芯原微电子（成都）有限公司 High-precision over-temperature detection circuit
CN113884209B (en) * 2021-09-09 2023-10-10 芯原微电子（成都）有限公司 Low-power consumption over-temperature detection circuit
CN114489220A (en) * 2022-01-04 2022-05-13 电子科技大学 Low-power-consumption over-temperature protection circuit without operational amplifier and reference

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