CN107731767A - A kind of microchannel heat sink with horizontal direction and vertical direction turbulence structure - Google Patents
A kind of microchannel heat sink with horizontal direction and vertical direction turbulence structure Download PDFInfo
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- CN107731767A CN107731767A CN201710928481.6A CN201710928481A CN107731767A CN 107731767 A CN107731767 A CN 107731767A CN 201710928481 A CN201710928481 A CN 201710928481A CN 107731767 A CN107731767 A CN 107731767A
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- 238000001149 thermolysis Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 230000003014 reinforcing effect Effects 0.000 claims description 3
- 238000012546 transfer Methods 0.000 abstract description 27
- 230000000694 effects Effects 0.000 abstract description 11
- 239000012530 fluid Substances 0.000 abstract description 6
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 description 10
- 238000001459 lithography Methods 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- 238000001816 cooling Methods 0.000 description 1
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- 229910021641 deionized water Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The present invention relates to a kind of microchannel heat sink, belong to technical field of heat dissipation.A kind of microchannel heat sink with horizontal direction and vertical direction turbulence structure, it is characterised in that：Three in microchannel heat sink or four walls are provided with turbulence structure, the turbulence structure on turbulence structure and lower wall surface on upper wall surface is staggered, rise and strengthen thermolysis in vertical direction, the turbulence structure on turbulence structure and right wall on left wall face is staggered, and rises and strengthens thermolysis in horizontal direction；Turbulence structure on one of turbulence structure and left wall face or right wall on upper wall surface on same vertical plane and can be in one of mutual split, turbulence structure on lower wall surface and left wall face or right wall turbulence structure on same vertical plane and the mutual split of energy.The present invention can strengthen convection heat transfer' heat-transfer by convection effect in the horizontal direction and the vertical direction simultaneously, can improve the temperature homogeneity and velocity uniformity of fluid in microchannel, strengthen radiator heat-dissipation effect.
Description
Technical field
The present invention relates to a kind of microchannel heat sink, more particularly to one kind to have horizontal direction and vertical direction flow-disturbing knot
The microchannel heat sink of structure.
Background technology
As microelectronic component is gradually to high-power, miniaturization, the fast development of high integration direction, device unit area
Heat flow density drastically.For example, the operating power of diode laser matrix has reached 100-400W/cm2, in the near future
1000W/cm will be exceeded2.And the heat-sinking capability of traditional heat-dissipating technology (such as natural air cooled, forced air cooling, conventional liquid are cold) has
Limit, it is impossible to meet the radiating requirements of future microelectronics device development.The chip temperature in microelectronic component often lifts 10 simultaneously
DEG C, its stability will reduce by 50%.Therefore heat dissipation from microelectronic devices problem turns into the bottleneck that device further develops, and carries
The microchannel heat sink of turbulence structure is based on above reason and is born.
Microchannel heat sink is limited in horizontal direction or vertical direction and adds turbulence structure at present, realizes single
(such as Fig. 1 Fig. 2 is micro- logical with rib structure in the vertical direction and the horizontal direction respectively to reinforcing convection heat transfer' heat-transfer by convection on direction
Road radiator).The summer article delivered in (2011) 1208-1219 of Applied Thermal Engineering 31 of state et al.
《Optimum thermal design of microchannel heat sink with triangular reentrant
cavities》Proposing and groove structure is added on the left side wall, right side wall of microchannel horizontal direction, convection body produces disturbance,
The uniformity of fluid temperature field and velocity field in the horizontal direction is improved, enhances convection heat transfer' heat-transfer by convection.However, fluid temperature field and
Velocity field in vertical direction change, therefore strengthen convection heat transfer' heat-transfer by convection it is limited in one's ability.
Desrues of French SAIPEM companies et al. is in (2012) 52- of Applied Thermal Engineering 45
63 articles delivered《Numerical prediction of heat transfer and pressure drop in
three-dimensional channels with alternated opposed ribs》It has studied the side in vertical direction
Shape fin is flowed by microchannel and the influence of heat dispersion.Turbulent flow and laminar model is respectively adopted to band fin microchannel in they
Numerically modeling has been carried out with the smooth microchannel of tradition.As a result show：Rib structure on microchannel on lower wall surface can be in Vertical Square
Upward near wall causes backflow, promotes cold fluid and hot fluid mixing, improves the convection heat transfer' heat-transfer by convection effect of microchannel.But Vertical Square
To rib structure only enhance convection heat transfer' heat-transfer by convection in vertical direction, do not improve fluid temperature field in the horizontal direction equal
Even property.
The content of the invention
For in the prior art the defects of, it is an object of the invention to provide one kind, and there is horizontal direction and vertical direction to disturb
The microchannel heat sink of flow structure, convection heat transfer' heat-transfer by convection is strengthened simultaneously by the turbulence structure in both direction, strengthens dissipating for radiator
Thermal effect, so as to solve the heat dissipation problem of above-mentioned microelectronic component.
Technical scheme：
A kind of microchannel heat sink with horizontal direction and vertical direction turbulence structure, it is characterised in that：Microchannel dissipates
The lower surface of the upper cover plate of hot device is upper wall surface, has the entrance and exit provided with heat eliminating medium on upper wall surface, channel portion
Left and right side is left wall face, right wall, and the upper surface of body portion is lower wall surface；Three in microchannel heat sink or four
Wall is provided with turbulence structure, and the turbulence structure on upper wall surface and lower wall surface is staggered, and rises and strengthens radiating in vertical direction and make
With the turbulence structure on left wall face and right wall is staggered, and rises and strengthens thermolysis in horizontal direction；Disturbing on upper wall surface
Turbulence structure on one of flow structure and left wall face or right wall on same vertical plane and can mutual split, on lower wall surface
Turbulence structure and one of left wall face or right wall on turbulence structure on same vertical plane and can mutual split.
Preferably, the turbulence structure is with the turbulence structure split on the turbulence structure on upper wall surface and left wall face, lower wall
The flow-disturbing knot on the turbulence structure and right wall in turbulence structure split, upper wall surface on turbulence structure and right wall on face
The sequential loop distribution of the turbulence structure split on turbulence structure and left wall face in structure split, lower wall surface, is further increased
The flow path of heat radiation working medium, play more preferable flow-disturbing effect.
Preferably, after the combination of each wall of the radiator, the turbulence structure on each wall not on a vertical plane,
This mode is more readily processed turbulence structure.
It is further preferred that the turbulence structure includes fin turbulence structure, groove turbulence structure or fin and groove group
Close turbulence structure.
It is further preferred that fin or groove that turbulence structure includes are arbitrary regular geometric shapes, including but not
It is limited to rectangle, square, triangle, circle, sector or the combination between them.
It is further preferred that the length range of fin or groove is 10-500 μm, width range is 10-1000 μm, high
It is 10-1000 μm to spend scope.
It is further preferred that the material of fin or groove is including between one of silicon, copper, nickel, aluminium, silver, SU-8 or they
Multiple layer combination.
Beneficial effect：
1) only radiated with existing in the microchannel of single direction (horizontal direction or vertical direction) with turbulence structure
Device is compared, and uses the turbulence structure energy in the microchannel heat sink of the present invention in upper wall surface, lower wall surface or the combination of upper lower wall surface
Realize the convection current augmentation of heat transfer effect in vertical direction, the turbulence structure reality that left wall face, right wall or left and right wall combine
Convection current augmentation of heat transfer effect in existing horizontal direction.When heat radiation working medium is by microchannel, the turbulence structure in horizontal direction
Heat radiation working medium is disturbed simultaneously with the turbulence structure in vertical direction, strengthens convection heat transfer' heat-transfer by convection in the two directions, breaks through mesh
Strengthen the limitation of convection heat transfer' heat-transfer by convection on preceding single direction, the temperature homogeneity of heat radiation working medium in microchannel can be improved, strengthened to spreading
Heat.Using FLUENT finite element emulation softwares to vertical direction rib structure Si bases microchannel, horizontal direction rib structure Si bases
Microchannel, result shows after both horizontally and vertically rib structure Si bases microchannel has carried out comparative study, in identical heat
Under source condition (100W/cm2) and entry condition (2m/s), the both horizontally and vertically highest on rib structure Si bases microchannel
Temperature (321K) is respectively than horizontal direction rib structure Si bases microchannel (331K), vertical direction rib structure Si bases microchannel
(329K) wants low 10K and 8K, therefore the radiating effect of radiator is greatly improved
2) microchannel heat sink that the present invention designs is simple in construction, and easy to use, preparation technology is feasible, favorable reproducibility, easily
In popularization and application.
Brief description of the drawings
Fig. 1 is the single MCA schematic diagram for carrying fin turbulence structure in vertical direction in the prior art；
Fig. 2 is the single MCA schematic diagram for carrying fin turbulence structure in horizontal direction in the prior art；
Fig. 3 be both vertically and horizontally on all microchannel heat sinks with fin turbulence structure overall signal
Figure；
Fig. 4 be the present invention both vertically and horizontally on all show with the single MCA of fin turbulence structure
It is intended to；
In figure：1 is the rib structure in vertical direction, and 2 be the rib structure in horizontal direction, and 3 be upper wall surface, under 4 are
Wall, 5 be left wall face, and 6 be right wall, and 19 be entrance, and 20 be outlet.
Embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings：
A kind of horizontal direction and the microchannel radiating with horizontal direction and vertical direction turbulence structure according to Fig. 3
Device, the lower surface of the upper cover plate of microchannel heat sink is upper wall surface, has the entrance and exit provided with heat eliminating medium on upper wall surface,
The left and right side of channel portion is left wall face, right wall, and the upper surface of body portion is lower wall surface；In microchannel heat sink
Three or four walls be provided with turbulence structure, the turbulence structure on upper wall surface and lower wall surface is staggered, and plays vertical direction
Upper reinforcing thermolysis, the turbulence structure on left wall face and right wall are staggered, and rise and strengthen thermolysis in horizontal direction；
Turbulence structure in one of turbulence structure on upper wall surface and left wall face or right wall can be spelled on same vertical plane and mutually
Close, the turbulence structure on one of turbulence structure and left wall face or right wall on lower wall surface is on same vertical plane and energy is mutual
Phase split.
As the turbulence structure on the turbulence structure in Fig. 4 on upper wall surface and left wall face can be on same vertical plane mutually
Piece together a L-shaped turbulence structure, the turbulence structure on lower wall surface can be in same vertical plane with the turbulence structure on left wall face
On piece together an inverted L-shaped turbulence structure mutually.
Turbulence structure is with the turbulence structure split on the turbulence structure on upper wall surface and left wall face, the flow-disturbing on lower wall surface
The turbulence structure split on the turbulence structure and right wall in turbulence structure split, upper wall surface in structure and right wall, lower wall
The sequential loop distribution of the turbulence structure split on turbulence structure and left wall face on face, further increases heat radiation working medium
Flow path, play more preferable flow-disturbing effect.
After another program is the combination of each wall of radiator, the turbulence structure on each wall not on a vertical plane, this
Kind mode is more readily processed turbulence structure.
Wherein turbulence structure combines turbulence structure including fin turbulence structure, groove turbulence structure or fin with groove.
The fin or groove that turbulence structure includes are arbitrary regular geometric shapes, including but not limited to rectangle, pros
Shape, triangle, circle, sector or the combination between them.
The length range of fin or groove is 10-500 μm, and width range is 10-1000 μm, altitude range 10-1000
μm。
The material of fin or groove is included in one of silicon, copper, nickel, aluminium, silver, SU-8 or the multiple layer combination between them.
When heat radiation working medium is by microchannel, the turbulence structure of horizontal direction and the turbulence structure of vertical direction are simultaneously right
Heat radiation working medium is disturbed, and strengthens convection heat transfer' heat-transfer by convection in the two directions, breaks through the office for strengthening convection heat transfer' heat-transfer by convection on current single direction
Limit, the temperature homogeneity of heat radiation working medium in microchannel can be improved, strengthen convection heat transfer' heat-transfer by convection, be greatly enhanced the radiating effect of radiator
Fruit.
In embodiment 1, the integral processing flow of radiator is as follows：
Step 1, the positive spin coating mask in matrix silicon chip, and by photoetching process Patterned masking layer, make lower wall by lithography
On face band by rib structure structure graph.
Step 2, performed etching with RIE, the part MCA with rib structure is etched in body upper surface.
The mask structure of step 3, removal step 1, and in the front sputtering Cr/Cu Seed Layers of silicon chip, and plate last layer 20
μm Sn layers, the body portion with rib structure completes.
Step 4, the positive spin coating mask in another piece of microchannel silicon chip, and dissolved by litho pattern on left and right wall
MCA figure with rib structure.
Step 5, performed etching with RIE, etch the part MCA that rib structure is carried on left and right wall.
The mask Rotating fields of step 6, removal step 4, and in the front of silicon chip, back spatter Cr/Cu Seed Layers, and plate
The Sn layers of 20 μm of last layer, the channel portion with rib structure completes on left and right wall.
Step 7, the back side spin coating mask in cover plate silicon chip, and by making the knot with rib structure on upper wall surface by lithography
Composition shape.
Step 8, performed etching with RIE, etch the part MCA that rib structure 9 is carried on cover plate lower surface.
The mask Rotating fields of step 9, removal step 7, and in the back spatter Cr/Cu Seed Layers of silicon chip, and plate last layer
20 μm of Sn layers.
Step 10, by machining or laser boring method make silicon hole, as microchannel heat sink entrance and
Outlet, the microchannel deck portion with rib structure complete.
Step 11, the body portion with rib structure that step 1 to step 3 is processed to formation, step 1 to step 3 plus
Work formed left and right wall on rib structure channel portion and step 7 to step process to be formed carry fin knot
The deck portion of structure is assembled, and is bonded by high temperature, forms complete closed cavity structure.
The horizontal cross sectional geometry of rib structure is preferably rectangle structure or other shapes in embodiment, as just
Square, triangle, circle, sector or combinations thereof.
The material of microchannel heat sink is preferably silicon in embodiment, includes but is not limited to the excellent material of other thermal conductivities,
Such as copper, nickel, aluminium, silver, SU-8.
The rib structure of use in embodiment be distributed on three walls of one of left and right wall and upper lower wall surface but
Also can go up on three walls of one of lower wall surface and left and right wall or up and down on four walls.
Groove, fin and groove can also be used as the flow-disturbing unit for strengthening radiating using fin in the present embodiment
Combining structure is as flow-disturbing unit.
Heat radiation working medium in embodiment is preferably deionized water, but can also include the aqueous solution containing nano-metal particle
Or the preferable solution of other thermal conductivities.Described heat radiation working medium enters microchannel, microchannel by water pump, mozzle, entrance 19
In turbulence structure disturbance just is produced to working medium, strengthen the radiating between working medium and microchannel, strengthen the radiating effect of radiator
Fruit, finally from the discharge of outlet 20.Again through supercooling, filtering, the closed cavity of radiating is reentered.
In example 2, the mask lithography on the matrix silicon chip of embodiment 1 is gone out into upper surface and carries the micro- of groove structure
Channel design figure, the mask lithography on the silicon chip of microchannel is gone out on left and right wall to carry to the MCA figure of groove structure
Shape, the mask lithography on cover plate silicon chip lower surface is gone out into the MCA figure with groove structure, then carved by RIE
Etching technique, etch body portion, channel portion and the ceiling plate portion for horizontally and vertically all carrying groove structure
Point.By going mask, sputtering Cr/Cu, plating, punching and bonding technology to complete on horizontally and vertically all with recessed
The making of the micro channel heat device of slot structure.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all originals in the present invention
Then with all any modification, equivalent and improvement made within spirit etc., it should be included in the scope of the protection.
Claims (7)
- A kind of 1. microchannel heat sink with horizontal direction and vertical direction turbulence structure, it is characterised in that：Radiate microchannel The lower surface of the upper cover plate of device is upper wall surface (3), there is the entrance (19) provided with heat eliminating medium and outlet (20) on upper wall surface, micro- logical The left and right side of road part is left wall face (5), right wall (6), and the upper surface of body portion is lower wall surface (4)；Radiate microchannel Three in device or four walls are provided with turbulence structure, and the turbulence structure on upper wall surface (3) and lower wall surface (4) is staggered, Rise and strengthen thermolysis in vertical direction, the turbulence structure on left wall face (5) and right wall (6) is staggered, and plays horizontal direction Upper reinforcing thermolysis；Turbulence structure on upper wall surface (3) exists with the turbulence structure on one of left wall face (5) or right wall (6) On same vertical plane and can mutual split, turbulence structure on lower wall surface (4) with one of left wall face (5) or right wall (6) Turbulence structure on same vertical plane and can mutual split.
- 2. the microchannel heat sink according to claim 1 with horizontal direction and vertical direction turbulence structure, its feature It is：The turbulence structure is with the turbulence structure split on the turbulence structure on upper wall surface (3) and left wall face (5), lower wall surface (4) On turbulence structure and the turbulence structure split in right wall (6), the turbulence structure on upper wall surface (3) and right wall (6) on The sequential loop distribution of turbulence structure split, the turbulence structure on lower wall surface (4) and the turbulence structure split on left wall face (5).
- 3. the microchannel heat sink according to claim 1 with horizontal direction and vertical direction turbulence structure, its feature It is：After each wall combination of radiator, the turbulence structure on each wall is not on a vertical plane.
- 4. the microchannel heat sink with horizontal direction and vertical direction turbulence structure according to one of claims 1 to 3, It is characterized in that：The turbulence structure combines turbulence structure including fin turbulence structure, groove turbulence structure or fin with groove.
- 5. the microchannel heat sink according to claim 4 with horizontal direction and vertical direction turbulence structure, its feature It is：The fin or groove that the turbulence structure includes are arbitrary regular geometric shapes, including but not limited to rectangle, pros Shape, triangle, circle, sector or the combination between them.
- 6. the microchannel heat sink according to claim 4 with horizontal direction and vertical direction turbulence structure, its feature It is：The length range of the fin or groove is 10-500 μm, and width range is 10-1000 μm, altitude range 10-1000 μm。
- 7. the microchannel heat sink according to claim 4 with horizontal direction and vertical direction turbulence structure, its feature It is：The material of the fin or groove includes one of silicon, copper, nickel, aluminium, silver, SU-8 or the multiple layer combination between them.
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Cited By (15)
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| CN108598053A (en) * | 2018-05-16 | 2018-09-28 | 湖北工程学院 | A kind of efficient microchannel jet stream is heat sink |
| CN108682660A (en) * | 2018-05-18 | 2018-10-19 | 中国电子科技集团公司第二十九研究所 | A kind of miniature cooling unit and its integrated approach and device |
| CN109149325A (en) * | 2018-09-21 | 2019-01-04 | 清华大学 | A kind of mixed structure micro-channel heat sink |
| CN109346444A (en) * | 2018-08-29 | 2019-02-15 | 杭州电子科技大学 | A kind of micro- radiator of the trapezoidal ridge rib array of band |
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| TWI695467B (en) * | 2019-07-10 | 2020-06-01 | 國立交通大學 | Thermal dissipation structure for integrated circuits |
| CN112299364A (en) * | 2020-10-23 | 2021-02-02 | 广东佛智芯微电子技术研究有限公司 | Preparation method of micro-channel radiator |
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| CN113611675A (en) * | 2021-06-18 | 2021-11-05 | 北京大学 | Heat radiator |
| CN113629030A (en) * | 2021-06-18 | 2021-11-09 | 北京大学 | Cooling device |
| CN116864467A (en) * | 2023-08-04 | 2023-10-10 | 毫厘机电(苏州)有限公司 | Chip heat abstractor |
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