CN107731646A - Surface wave plasma process equipment - Google Patents
Surface wave plasma process equipment Download PDFInfo
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- CN107731646A CN107731646A CN201610666868.4A CN201610666868A CN107731646A CN 107731646 A CN107731646 A CN 107731646A CN 201610666868 A CN201610666868 A CN 201610666868A CN 107731646 A CN107731646 A CN 107731646A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
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Abstract
Surface wave plasma process equipment provided by the invention, it includes reaction chamber, microwave transmission mechanism and resonance mechanism, and resonance mechanism includes resonator, metal antenna plate, medium member and multiple metal probes, and resonator is arranged on the top of reaction chamber；Multiple metal probes are liftable, and the top vertical of its lower end self-resonance chamber extends to the inside of resonator；The quantity and position that the multiple through holes run through along its thickness direction, the quantity of multiple through holes and position and multiple metal probes are provided with metal antenna plate correspond；Medium member is used to microwave energy being coupled into reaction chamber.By adjusting the vertical spacing between the lower end of each metal probe and metal antenna plate, to adjust the Density Distribution of the plasma formed in reaction chamber.Surface wave plasma process equipment provided by the invention, it can adjust the distribution of plasma in real time, so as to meet that the difference that plasma is distributed under different process conditions requires.
Description
Technical field
The present invention relates to microelectronics technology, more particularly to a kind of surface wave plasma process equipment.
Background technology
At present, plasma processing device is widely used in the manufacturing process of integrated circuit or MEMS.Deng
Plasma processing apparatus includes capacitance coupling plasma process equipment, inductively coupled plasma process equipment, electron cyclotron
Resonance Plasma process equipment and surface wave plasma process equipment etc..Wherein, surface wave plasma process equipment phase
For other plasma processing devices, higher plasma density, lower electron temperature can be obtained, and need not
Increase external magnetic field, therefore surface wave plasma process equipment turns into one of state-of-the-art plasma apparatus.
Fig. 1 is a kind of existing structural representation of surface wave plasma process equipment.As shown in figure 1, surface wave etc.
Plasma processing apparatus mainly includes microwave source mechanism, antenna mechanism and reaction chamber 19.Wherein, microwave source mechanism includes power supply
1st, microwave source (magnetron) 2, resonator 3, transverter 4, load 5, directional coupler 6, impedance adjustment unit 7, waveguide 8 and feed
Coaxial probe 9.Antenna mechanism includes antenna body 11, aperture plate 15, slow-wave plate 12 and dielectric-slab 16.It is micro- when carrying out technique
Wave source mechanism is used to provide microwave energy, and is loaded into by feeding coaxial probe 9 on slow-wave plate 12；Microwave energy passes through stagnant ripple
Wavelength is compressed after plate 12, and excites shape in reaction chamber 19 by dielectric-slab 16 by the downward radiation of aperture plate 15, microwave
Into plasma.In addition, supporting table 21 is provided with reaction chamber 19, to support substrate 20.
Fig. 2 is the top view of aperture plate.As shown in Fig. 2 microwave energy is by multiple T-shaped gaps in aperture plate 15
151 feed-ins, multiple T-shaped gaps 151 be distributed in using the center of aperture plate 15 as the center of circle, different radii multiple circumference on, so as to
The distributing homogeneity of the plasma of the top of substrate 20 diametrically can be ensured.But because the structure of aperture plate 15 is solid
Fixed, the distribution situation of plasma is also fixed, and can not be adjusted, so as to meet in different process conditions
The different requirements of lower plasma distribution.
The content of the invention
It is contemplated that at least solves one of technical problem present in prior art, it is proposed that a kind of surface wave plasma
Body process equipment, it can adjust the distribution of plasma in real time, so as to meet the plasma under different process conditions
The different requirements of distribution.
To realize that the purpose of the present invention provides a kind of surface wave plasma process equipment, including reaction chamber and it is used for
The microwave transmission mechanism of microwave energy is provided to the reaction chamber, in addition to resonance mechanism, the resonance mechanism include resonance
Chamber, metal antenna plate, medium member and multiple metal probes, wherein,
The resonator is arranged on the top of the reaction chamber；
The multiple metal probe is liftable, and its lower end extended to from the top vertical of the resonator it is described humorous
Shake the inside of chamber；
The metal antenna plate is used as the bottom chamber wall of the resonator, and is provided with the metal antenna plate along it
The quantity and position of multiple through holes that thickness direction runs through, the quantity of the multiple through hole and position with the multiple metal probe
Correspond；
The medium member is used to the microwave energy being coupled into the reaction chamber；
By adjusting the vertical spacing between the lower end of each metal probe and the metal antenna plate, to adjust
The Density Distribution of the plasma formed in the reaction chamber.
Preferably, in metal antenna plate institute in the plane, the projective distribution of the multiple metal probe is with described
The center of plane where metal antenna plate is on the center of circle and the different multiple circumference of radius.
Preferably, the resonance mechanism also includes multiple elevating mechanisms, the quantity of the elevating mechanism and the circumference
Quantity is corresponding, each elevating mechanism be used to driving correspondingly all metal probes on each circumference synchronously rise or under
Drop；Or
The quantity of the elevating mechanism is corresponding with the quantity of the metal probe, and each elevating mechanism is used to correspond
Ground drives each metal probe to rise or fall.
Preferably, in metal antenna plate institute in the plane, the projective distribution of the multiple metal probe is with described
The center of plane where metal antenna plate is on a circumference in the center of circle.
Preferably, the resonance mechanism also includes multiple elevating mechanisms, and the quantity of the elevating mechanism is visited with the metal
The quantity of pin is corresponding, and each elevating mechanism is used to drive each metal probe to rise or fall correspondingly；Or
The elevating mechanism is one, to drive all metal probes synchronously to rise or fall.
Preferably, each metal probe has external screw thread, and is provided with and passes through in the roof cavity wall of the resonator
The screwed hole of its thickness is worn, each metal probe is arranged in each screwed hole correspondingly by its external screw thread；
By any one metal probe clockwise or counterclockwise, to adjust the lower end of the metal probe and the gold
Belong to the vertical spacing between antenna plate.
Preferably, the vertical spacing between the lower end of the metal probe and the metal antenna plate is not less than 10mm.
Preferably, the span of the length of the resonator in the vertical direction is in 10~200mm.
Preferably, the through hole is circular hole, and the span of the diameter of the circular hole is in 20~120mm；Or
The through hole is square hole, and the span of the length of side of the square hole is in 20~120mm.
Preferably, material includes copper, aluminium or stainless steel used by the metal antenna plate.
Preferably, the medium member includes dielectric-slab, and the dielectric-slab is arranged on the metal antenna plate and the reaction
Between chamber, and it is tightly connected with the reaction chamber；Or
The medium member includes installing plate, the installing plate be arranged on the metal antenna plate and the reaction chamber it
Between, and be tightly connected with the reaction chamber, and multiple medium blocks through its thickness, institute are embedded with the installing plate
The quantity and position for giving an account of mass correspond with the quantity of the multiple through hole and position.
Preferably, the span of the thickness of the medium member is in 5~80mm.
Preferably, material includes the quartz of quartz, ceramics, surface coated with yttria used by the medium member
Or surface is coated with the ceramics of yttria.
Preferably, the medium member includes the dielectric material being filled in each through hole.
Preferably, the surface wave plasma process equipment also includes connecting cylinder and screw probe, wherein,
The connecting cylinder is vertically arranged in the top of the resonator, and its inside is connected with the inside of the resonator
It is logical；The microwave transmission mechanism includes being used for the waveguide for transmitting microwave energy, and the waveguide is connected with the top of the connecting cylinder,
And it is connected with the inside of the connecting cylinder；
The lower end of the screw probe sequentially passes through the waveguide and the connecting cylinder straight down, and extends to described humorous
Shake the inside of chamber, to by described in microwave energy feed-in in resonator.
Preferably, the microwave transmission mechanism also includes short-circuit plunger, and the short-circuit plunger is arranged on the end of the waveguide
Portion, to adjust the distribution of the standing wave in the waveguide.
The invention has the advantages that：
Surface wave plasma process equipment provided by the invention, it is provided with resonator at the top of reaction chamber and can
The metal probe of lifting, and the top vertical of the lower end self-resonance chamber of the metal probe is extended to the inside of resonator.Entering
During row technique, electromagnetic field of high frequency is formed near the metal probe in resonator, the distribution of the electromagnetic field of high frequency can shadow
The Density Distribution of the plasma formed in reaction chamber is rung, thus, by the lower end and the metal that adjust each metal probe
Vertical spacing between antenna plate, the distribution of electromagnetic field of high frequency can be adjusted, so as to adjust in real time in reaction chamber
The Density Distribution of the plasma of indoor formation, and then can meet that plasma distribution is not under different process conditions
With requirement.
Brief description of the drawings
Fig. 1 is a kind of existing structural representation of surface wave plasma process equipment；
Fig. 2 is the top view of aperture plate；
Fig. 3 is the structural representation of surface wave plasma process equipment provided in an embodiment of the present invention；
Fig. 4 A are the top plan view for the first resonance mechanism that the embodiment of the present invention uses；
Fig. 4 B are the main view profile that the first resonance mechanism that the embodiment of the present invention uses uses the first regulative mode；
Fig. 4 C are the main view profile that the first resonance mechanism that the embodiment of the present invention uses uses second of regulative mode；
Fig. 4 D are the plasma distribution map obtained using the first regulative mode；
Fig. 4 E are the plasma distribution map obtained using second of regulative mode；
Fig. 5 A are the top plan view for second of resonance mechanism that the embodiment of the present invention uses；
Fig. 5 B are the main view profile that second of resonance mechanism that the embodiment of the present invention uses uses the first regulative mode；
Fig. 5 C are the main view profile that second of resonance mechanism that the embodiment of the present invention uses uses second of regulative mode.
Embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The surface wave plasma process equipment of offer is described in detail.
Fig. 3 is the structural representation of surface wave plasma process equipment provided in an embodiment of the present invention.Referring to Fig. 3,
Surface wave plasma process equipment includes reaction chamber 46, microwave transmission mechanism and resonance mechanism.Microwave transmission mechanism passes through
Resonance mechanism provides microwave energy to reaction chamber 46.Wherein, supporting table 47 is provided with reaction chamber 46, for carrying base
Piece.Microwave transmission mechanism includes power supply 31, microwave source (magnetron) 32, resonator 33, transverter 34, load 35, directional couple
Device 36, impedance adjustment unit 37 and waveguide 38.
Resonance mechanism includes resonator 42, metal antenna plate 44, medium member 45 and multiple metal probes 43, wherein, resonance
Chamber 42 is arranged on the top of reaction chamber 46, and is made using the metal of stainless steel, aluminium alloy etc., and can be according to tool
Body situation is designed as the cavity of the arbitrary shape of cylinder, rectangle or square etc..
In the present embodiment, surface wave plasma process equipment also includes connecting cylinder 41 and screw probe 39, wherein, even
Connect cylinder 41 is vertically arranged in the top of resonator 42, and its inside is connected with the inside of resonator 42.Microwave transmission mechanism
Waveguide 38 is connected with the top of connecting cylinder 41, and is connected with the inside of connecting cylinder 41.The lower end of screw probe 39 is straight down
Waveguide 38 and connecting cylinder 41 are sequentially passed through, and extends to the inside of resonator 42, to by microwave energy feed-in resonator 42.
Preferably, microwave transmission mechanism also includes short-circuit plunger 40, and the short-circuit plunger 40 is arranged on the end of waveguide 38, uses
To adjust the distribution of the standing wave in waveguide 38.
Multiple metal probes 43 are liftable, and the top vertical of its lower end self-resonance chamber 42 extends to resonator 42
It is internal.Metal antenna plate 44 is used as the bottom chamber wall of resonator 42, and its used material includes copper, aluminium or stainless steel.And
And the multiple through holes 441 run through along its thickness direction are provided with metal antenna plate 44, the quantity of multiple through holes 441 and position
Put and the quantity of multiple metal probes 43 and position one-to-one corresponding.
Medium member 45 is used to microwave energy being coupled into reaction chamber 46, to excite generation etc. in reaction chamber 46
Gas ions.In the present embodiment, medium member 45 is arranged between metal antenna plate 44 and reaction chamber 46, and with reaction chamber 46
It is tightly connected, i.e. medium member 45 uses monolithic construction, and metal antenna plate 44 and reaction chamber 46 is mutually isolated, so not
Microwave energy can be only coupled into reaction chamber 46, but also the boundary between resonance mechanism and reaction chamber 46 can be made
Face is dielectric material, so as to avoid the formation of metallic pollution.Used by the medium member 45 material include quartz, ceramics,
Quartz or surface of the surface coated with yttria are coated with the ceramics of yttria.Preferably, the thickness of medium member 45
The span of degree is in 5~80mm.
When carrying out technique, electromagnetic field of high frequency is formed near the metal probe 43 in resonator 42, the high frequency
The distribution of electromagnetic field can influence the Density Distribution of the plasma formed in reaction chamber 46.By adjusting each metal probe
Vertical spacing between 43 lower end and metal antenna plate 44, the distribution of electromagnetic field of high frequency can be adjusted, so as to
The Density Distribution for the plasma that regulation is formed in reaction chamber 46 in real time, and then can meet under different process conditions
The different requirements of plasma distribution.In addition, by above-mentioned resonance mechanism, can under extremely low air pressure conditions, using compared with
Low power can just form the initial ionization of reacting gas, so as to expand technique section.
Two kinds of arrangement modes of metal probe 43 are described in detail below.Specifically, the first arrangement mode, asks one
And Fig. 4 A~Fig. 4 E are referred to, in the institute of metal antenna plate 44 in the plane, the projective distribution of multiple metal probes 43 is with metal day
The center of the place plane of line plate 44 is on the center of circle and different two circumference (inner ring circumference and outer ring circumference) of radius.Such as Fig. 4 A
Shown, the metal probe 43N being distributed on inner ring circumference has 6, respectively 43N1~43N6.The gold being distributed on the circumference of outer ring
Category probe 43W has 12, respectively 43W1~43W12.
Vertical spacing between the lower end of metal probe 43 and metal antenna plate 44 is bigger, then in reaction chamber 46 with the gold
The Density Distribution for belonging to the plasma that the corresponding region in position of probe 43 is formed is smaller；Conversely, the lower end of metal probe 43
Vertical spacing between metal antenna plate 44 is smaller, then area corresponding with the position of the metal probe 43 in reaction chamber 46
The Density Distribution for the plasma that domain is formed is bigger.Based on this, as shown in Figure 4 B, 6 metals being distributed on inner ring circumference are visited
Vertical spacing H1 between pin 43N lower end and metal antenna plate 44 is identical, 12 metal probes being distributed on the circumference of outer ring
Vertical spacing H2 between 43W lower end and metal antenna plate 44 is identical, and H1 is less than H2, for example, H1=10mm；H2=
40mm.In this case, because H1 is less than H2, be then distributed in the plasma of the top of supporting table 47, its be distributed in
The density of the corresponding area distributions of 6 metal probe 43N on circle circumference is more than 12 metals being distributed on the circumference of outer ring
The density of area distribution corresponding probe 43W, as shown in Figure 4 D, it is achieved thereby that the regulation of the Density Distribution of plasma.
As shown in Figure 4 C, between the lower end for 6 metal probe 43N being distributed on inner ring circumference and metal antenna plate 44
Vertical spacing H4 is identical, perpendicular between the lower end for 12 metal probe 43W being distributed on the circumference of outer ring and metal antenna plate 44
Straight spacing H3 is identical, and H3 is less than H4, for example, H3=10mm；H4=30mm.In this case, because H3 is less than H4, then divide
Plasma of the cloth above supporting table 47, it is in the corresponding areas of 12 metal probe 43W with being distributed on the circumference of outer ring
The density of domain distribution is more than the density of the corresponding area distributions of 6 metal probe 43N being distributed on inner ring circumference, such as Fig. 4 E
It is shown, it is achieved thereby that the regulation of the Density Distribution of plasma.
Certainly, in actual applications, can also be as the case may be by the lower end of the metal probe on same circumference and gold
Vertical spacing between category antenna plate is set as differing, to meet that plasma distribution is not under different process conditions
With requirement.
It should be noted that in the present embodiment, in the institute of metal antenna plate 44 in the plane, the throwing of multiple metal probes 43
Shadow is distributed in using the center of the place plane of metal antenna plate 44 as the center of circle and different two circumference of radius (inner ring circumference and outer
Enclose circumference) on.But the invention is not limited in this, in actual applications, the quantity of circumference can also be more than three.
In actual applications, elevating movement of the elevating mechanism to above-mentioned metal probe 43 can be used to carry out remote auto tune
Section, or, it can also be adjusted using elevating movement of the manual mode to above-mentioned metal probe 43.Specifically, it is long-range from
In the mode of dynamic regulation, resonance mechanism also includes multiple elevating mechanism (not shown)s, the quantity and circumference of the elevating mechanism
Quantity it is corresponding, each elevating mechanism be used to driving correspondingly all metal probes on each circumference synchronously rise or
Decline, i.e. elevating mechanism is two, and one of them is used for the synchronous all metal probe 43N driven on inner ring circumference；It is wherein another
One is used for the synchronous all metal probe 43W driven on the circumference of outer ring.Or the quantity of elevating mechanism can also be visited with metal
The quantity of pin is corresponding, and each elevating mechanism is used to drive each metal probe to rise or fall correspondingly.That is,
The quantity of elevating mechanism is 18, and each elevating mechanism rises or falls for corresponding metal probe to be operated alone.In reality
In, elevating mechanism can be lifting motor, lift cylinder or lifting hydraulic cylinder.
In manual regulative mode, each metal probe has external screw thread, and is set in the roof cavity wall 421 of resonator 42
The screwed hole through its thickness is equipped with, each metal probe 43 is arranged on each screwed hole correspondingly by its external screw thread
In.Manually any one metal probe 43 clockwise or counterclockwise, to adjust the lower end of the metal probe and metal
Vertical spacing between antenna plate 44.Certainly, on this basis, the manual regulation can also be replaced by the way of automatically adjusting
Mode, i.e. drive any one metal probe 43 clockwise automatically using the drive mechanism of electric rotating machine etc. or the inverse time
Pin rotates, so as to realize the regulation to the vertical spacing between the lower end of metal probe and metal antenna plate 44.
Second of arrangement mode, also referring to Fig. 5 A~Fig. 5 C, the institute of metal antenna plate 44 in the plane, visit by multiple metals
The projective distribution of pin 43 is on a circumference using the center of the place plane of metal antenna plate 44 as the center of circle.As shown in Figure 5A, divide
Metal probe 43D of the cloth on the circumference has 5, respectively 43D1~43D5.
As shown in Figure 5 B, it is perpendicular between the lower end for 5 metal probe 43D being distributed on the circumference and metal antenna plate 44
Straight spacing H5 is identical, for example, H5=20mm.
As shown in Figure 5 C, it is perpendicular between the lower end for 5 metal probe 43D being distributed on the circumference and metal antenna plate 44
Straight spacing H5 is differed, and the vertical spacing H7 between one of metal probe 43D lower end and metal antenna plate 44 is more than it
Vertical spacing H6 between remaining metal probe 43D lower end and metal antenna plate 44, for example, H6=20mm；H7=40mm.At this
In the case of kind, the plasma above supporting table 47, one of metal probe 43D that it is distributed in vertical spacing is H7
The density of corresponding area distribution, which is less than, is distributed in the region point corresponding with remaining metal probe 43D that vertical spacing is H6
The density of cloth, it is achieved thereby that the regulation of the Density Distribution of plasma.
In actual applications, elevating movement of the elevating mechanism to above-mentioned metal probe 43 can be used to carry out remote auto tune
Section, or, it can also be adjusted using elevating movement of the manual mode to above-mentioned metal probe 43.The elevating mechanism with it is above-mentioned
Elevating mechanism in the first arrangement mode is similar, and it is differed only in, and elevating mechanism can also be one, to drive
Some metal probes synchronously rise or fall.Manual regulative mode and the manual regulative mode phase in the first above-mentioned arrangement mode
Together, will not be repeated here.
Preferably, the vertical spacing between the lower end of metal probe 43 and metal antenna plate 44 is not less than 10mm, to avoid
The situation of air breakdown occurs under the conditions of high-power.
It is further preferred that the span of the length of the in the vertical direction of resonator 42 is in 10~200mm, with to metal
Enough spaces are reserved in the elevating movement of probe 43.
In actual applications, the through hole on metal antenna plate 44 can be circular hole 441, the span of the diameter of the circular hole
In 20~120mm；Or the through hole 441 on metal antenna plate 44 can also be square hole, the length of side of the square hole takes
It is worth scope in 20~120mm.Or the through hole on metal antenna plate 44 can also be the through hole of other arbitrary shapes.
It should be noted that in the present embodiment, medium member 45 uses monolithic construction, but the invention is not limited in
This, in actual applications, medium member 45 can also use split-type structural, i.e.,：Medium member 45 includes installing plate, and the installing plate is set
Put between metal antenna plate 44 and reaction chamber 46, and be tightly connected with reaction chamber 46, and be embedded with installing plate
Through multiple medium blocks of its thickness, the quantity of the medium block and position correspond with the quantity of multiple through holes and position.Or
Person, medium member 45 can also be the dielectric material being filled in each through hole 441, to replace above-mentioned dielectric-slab or medium
Block.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (16)
1. a kind of surface wave plasma process equipment, including reaction chamber and for providing microwave energy to the reaction chamber
Microwave transmission mechanism, it is characterised in that also including resonance mechanism, the resonance mechanism includes resonator, metal antenna plate, is situated between
Matter part and multiple metal probes, wherein,
The resonator is arranged on the top of the reaction chamber；
The multiple metal probe is liftable, and its lower end extends to the resonator from the top vertical of the resonator
Inside；
The metal antenna plate is used as the bottom chamber wall of the resonator, and is provided with the metal antenna plate along its thickness
The quantity and position of multiple through holes that direction is run through, the quantity of the multiple through hole and position and the multiple metal probe are one by one
It is corresponding；
The medium member is used to the microwave energy being coupled into the reaction chamber；
By adjusting the vertical spacing between the lower end of each metal probe and the metal antenna plate, to adjust described
The Density Distribution of the plasma formed in reaction chamber.
2. surface wave plasma process equipment as claimed in claim 1, it is characterised in that where the metal antenna plate
In plane, the center of circle and half is in the center of projective distribution plane where using the metal antenna plate of the multiple metal probe
On the different multiple circumference in footpath.
3. surface wave plasma process equipment as claimed in claim 2, it is characterised in that the resonance mechanism also includes more
Individual elevating mechanism, the quantity of the elevating mechanism is corresponding with the quantity of the circumference, and each elevating mechanism is used to correspond
Ground drives all metal probes on each circumference synchronously to rise or fall；Or
The quantity of the elevating mechanism is corresponding with the quantity of the metal probe, and each elevating mechanism is used to drive correspondingly
Each metal probe is moved to rise or fall.
4. surface wave plasma process equipment as claimed in claim 1, it is characterised in that where the metal antenna plate
In plane, one as the center of circle of the center of projective distribution plane where using the metal antenna plate of the multiple metal probe
On circumference.
5. surface wave plasma process equipment as claimed in claim 4, it is characterised in that the resonance mechanism also includes more
Individual elevating mechanism, the quantity of the elevating mechanism is corresponding with the quantity of the metal probe, and each elevating mechanism is used for one by one
Each metal probe is accordingly driven to rise or fall；Or
The elevating mechanism is one, to drive all metal probes synchronously to rise or fall.
6. the surface wave plasma process equipment as described in claim 2 or 4, it is characterised in that each metal probe
With external screw thread, and the screwed hole of its thickness is provided through in the roof cavity wall of the resonator, each metal probe leads to
Its external screw thread is crossed to be arranged in each screwed hole correspondingly；
By any one metal probe clockwise or counterclockwise, to adjust the lower end of the metal probe and the metal day
Vertical spacing between line plate.
7. the surface wave plasma process equipment as described in claim 1-5 any one, it is characterised in that the metal is visited
Vertical spacing between the lower end of pin and the metal antenna plate is not less than 10mm.
8. the surface wave plasma process equipment as described in claim 1-5 any one, it is characterised in that the resonator
The span of the length of in the vertical direction is in 10~200mm.
9. the surface wave plasma process equipment as described in claim 1-5 any one, it is characterised in that the through hole is
Circular hole, the span of the diameter of the circular hole is in 20~120mm；Or
The through hole is square hole, and the span of the length of side of the square hole is in 20~120mm.
10. the surface wave plasma process equipment as described in claim 1-5 any one, it is characterised in that the metal
Material includes copper, aluminium or stainless steel used by antenna plate.
11. the surface wave plasma process equipment as described in claim 1-5 any one, it is characterised in that the medium
Part includes dielectric-slab, and the dielectric-slab is arranged between the metal antenna plate and the reaction chamber, and with the reaction chamber
Room is tightly connected；Or
The medium member includes installing plate, and the installing plate is arranged between the metal antenna plate and the reaction chamber, and
It is tightly connected with the reaction chamber, and multiple medium blocks through its thickness is embedded with the installing plate, is given an account of
The quantity of mass and position correspond with the quantity of the multiple through hole and position.
12. surface wave plasma process equipment as claimed in claim 11, it is characterised in that the thickness of the medium member
Span is in 5~80mm.
13. surface wave plasma process equipment as claimed in claim 11, it is characterised in that used by the medium member
Material includes the ceramics that quartz, ceramics, surface quartz or surface coated with yttria are coated with yttria.
14. the surface wave plasma process equipment as described in claim 1-5 any one, it is characterised in that the medium
Part includes the dielectric material being filled in each through hole.
15. the surface wave plasma process equipment as described in claim 1-5 any one, it is characterised in that the surface
Ripple plasma processing device also includes connecting cylinder and screw probe, wherein,
The connecting cylinder is vertically arranged in the top of the resonator, and its inside is connected with the inside of the resonator；Institute
Stating microwave transmission mechanism includes being used for the waveguide for transmitting microwave energy, and the waveguide is connected with the top of the connecting cylinder, and with
The inside of the connecting cylinder is connected；
The lower end of the screw probe sequentially passes through the waveguide and the connecting cylinder straight down, and extends to the resonator
Inside, to by described in microwave energy feed-in in resonator.
16. surface wave plasma process equipment as claimed in claim 15, it is characterised in that the microwave transmission mechanism is also
Including short-circuit plunger, the short-circuit plunger is arranged on the end of the waveguide, to adjust the distribution of the standing wave in the waveguide.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610666868.4A CN107731646B (en) | 2016-08-12 | 2016-08-12 | Surface wave plasma process equipment |
| TW105140381A TWI612853B (en) | 2016-03-03 | 2016-12-07 | Surface wave plasma device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610666868.4A CN107731646B (en) | 2016-08-12 | 2016-08-12 | Surface wave plasma process equipment |
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| CN107731646A true CN107731646A (en) | 2018-02-23 |
| CN107731646B CN107731646B (en) | 2019-08-23 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109195299A (en) * | 2018-10-31 | 2019-01-11 | 上海工程技术大学 | A kind of periphery wave plasma generating device |
| CN110769585A (en) * | 2018-07-27 | 2020-02-07 | 北京北方华创微电子装备有限公司 | Surface wave plasma device |
| CN110797248A (en) * | 2018-08-01 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Surface wave plasma device and semiconductor processing apparatus |
| CN110797250A (en) * | 2018-08-03 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Surface wave plasma processing apparatus |
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