TWI612853B - Surface wave plasma device - Google Patents

Surface wave plasma device Download PDF

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TWI612853B
TWI612853B TW105140381A TW105140381A TWI612853B TW I612853 B TWI612853 B TW I612853B TW 105140381 A TW105140381 A TW 105140381A TW 105140381 A TW105140381 A TW 105140381A TW I612853 B TWI612853 B TW I612853B
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dielectric
resonant cavity
probe
surface wave
plasma device
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TW105140381A
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TW201733411A (en
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Xi-Jiang Chang
Qiong-Rong Qu
Gang Wei
Ya-Hui Huang
Jin-Zhi Bo
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Priority claimed from CN201610121051.9A external-priority patent/CN107155256A/en
Priority claimed from CN201610666868.4A external-priority patent/CN107731646B/en
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表面波電漿裝置Surface wave plasma device

本發明涉及半導體裝置製造技術領域，具體涉及一種表面波電漿裝置。The present invention relates to the field of semiconductor device manufacturing technology, and in particular to a surface wave plasma device.

近年來，隨著電子技術的高速發展，人們對積體電路的要求趨向於高度集成化和更大面積化，這就要求生產積體電路（IC）的企業需要不斷提高半導體晶片的加工能力。電漿裝置在積體電路或MEMS（Micro-Electro-Mechanical System，微機電系統）裝置的製造製程中是不可取代的，因此，高性能電漿發生裝置的研發對於半導體製造製程的發展至關重要。當電漿裝置用於半導體製造製程時，最主要的考察因素是：在一定氣壓範圍內能有效率地生成大面積的均勻的電漿。具體到製程細節，關注點往往在於製程氣體、氣壓、電漿均勻程度以及電漿內的粒子成分即電漿的可控性。為此，對於電漿源而言，能在低氣壓下激發大面積的、高密度的、均勻的電漿的電漿源是當前的主要研究方向。In recent years, with the rapid development of electronic technology, the demand for integrated circuits tends to be highly integrated and larger, which requires enterprises that produce integrated circuits (IC) to continuously improve the processing capability of semiconductor wafers. The plasma device is irreplaceable in the manufacturing process of integrated circuits or MEMS (Micro-Electro-Mechanical System) devices. Therefore, the development of high-performance plasma generating devices is crucial for the development of semiconductor manufacturing processes. . When the plasma device is used in a semiconductor manufacturing process, the most important factor to be investigated is that a large area of uniform plasma can be efficiently generated within a certain pressure range. Specific to the details of the process, the focus is often on the process gas, gas pressure, plasma uniformity and the controllability of the particle components in the plasma, ie the plasma. For this reason, for the plasma source, the plasma source capable of exciting large-area, high-density, uniform plasma under low pressure is the current main research direction.

在傳統的半導體製造業，各種類型的電漿裝置被廣泛應用於各種製程，例如，電容耦合電漿(CCP)類型，電感耦合電漿(ICP)類型以及表面波（SWP）或電子迴旋共振電漿(ECR)等類型。表面波電漿是近年來發展起來的新型電漿發生技術，相較於電感耦合電漿，其結構更加簡單，且在獲得大面積且均勻的電漿方面具有不可忽視的優勢。由於表面波加熱的機理，微波能量被約束在電漿和介電質的邊界上，實際上使用的電漿是沒有激勵源影響的遠端電漿，因此相較於電容耦合電漿和電感耦合電漿，其電子溫度更低，從而減少了高能電子帶來的對裝置表面的電漿損傷。表面波是指，利用微波在介電質表面附近激發出高於表面波臨界密度以上的電漿，微波在介電質表面電漿區域沿法向迅速衰減，而在介電質與電漿邊界上形成沿表面傳輸的波。表面波在其傳輸的範圍內可形成週期性的強電場，從而維持高密度的電漿，此即表面波電漿的形成原理。In the traditional semiconductor manufacturing industry, various types of plasma devices are widely used in various processes, such as capacitive coupled plasma (CCP) type, inductively coupled plasma (ICP) type, and surface wave (SWP) or electron cyclotron resonance. Type of pulp (ECR). Surface wave plasma is a new type of plasma generation technology developed in recent years. Compared with inductively coupled plasma, its structure is simpler and has advantages that can not be ignored in obtaining large-area and uniform plasma. Due to the mechanism of surface wave heating, the microwave energy is confined to the boundary between the plasma and the dielectric. The plasma actually used is the far-end plasma without the influence of the excitation source, so it is compared with the capacitively coupled plasma and inductive coupling. The plasma has a lower electron temperature, which reduces the plasma damage to the device surface caused by high-energy electrons. Surface wave refers to the use of microwave to excite plasma above the critical density of the surface wave near the surface of the dielectric. The microwave rapidly decays along the normal direction in the plasma region of the dielectric surface, while the dielectric and plasma boundaries Waves are formed on the surface. Surface waves can form a periodic strong electric field within the range of their transmission, thereby maintaining a high-density plasma, which is the principle of surface wave plasma formation.

第1a圖為一種現有的表面波電漿裝置的結構示意圖，第1b圖為第1a圖的表面波電漿裝置中的表面波天線縫隙板的結構示意圖。請一併參閱第1a圖和第1b圖，該表面波電漿裝置包括：微波源及微波傳輸匹配結構、表面波天線結構和腔室三個部分，其中，微波源及微波傳輸匹配結構包括：微波源供電電源1、微波源2、諧振器3、環流器4、用於吸收反射功率的負載5、用於測量入射功率和反射功率的定向耦合器6、阻抗調節單元7和矩形波導8。如圖所示，表面波天線結構包括：自上而下依次層疊設置的天線主體11、滯波板12、縫隙板15和介電質板16。其中，天線主體11呈圓柱形，通常由鋁、不銹鋼等金屬材料製成。縫隙板15為天線板，多由鋁、不銹鋼等金屬材料製成，其形狀為圓盤狀，且在其上由內到外均勻分佈有多圈縫隙結構，每一圈縫隙結構均包含複數T型結構的縫隙且這些T型結構的縫隙沿圓周方向均勻分佈。滯波板12呈圓盤狀，為低損耗的介電質板，其介電質可以為Al2 O3 ，SiO2 或SiN（矽氮化合物），微波能量通過滯波板12後其波長被壓縮，從而使得微波在縫隙板15上產生圓偏振，圓偏振的波通過介電質板16在真空腔室19內激發產生電漿，介電質板16通常為石英。腔室包括：腔體18、用於密封腔體18和天線主體11的密封圈17和用於放置晶片20的支撐台21。Fig. 1a is a schematic view showing the structure of a conventional surface wave plasma device, and Fig. 1b is a schematic view showing the structure of a surface wave antenna slot plate in the surface wave plasma device of Fig. 1a. Referring to FIG. 1a and FIG. 1b together, the surface wave plasma device comprises: a microwave source and a microwave transmission matching structure, a surface wave antenna structure and a chamber, wherein the microwave source and the microwave transmission matching structure comprise: The microwave source power supply 1, the microwave source 2, the resonator 3, the circulator 4, the load 5 for absorbing reflected power, the directional coupler 6, the impedance adjusting unit 7, and the rectangular waveguide 8 for measuring incident power and reflected power. As shown in the figure, the surface wave antenna structure includes an antenna main body 11, a retardation plate 12, a slit plate 15, and a dielectric plate 16 which are laminated in this order from top to bottom. The antenna body 11 has a cylindrical shape and is usually made of a metal material such as aluminum or stainless steel. The slot plate 15 is an antenna plate, which is mostly made of a metal material such as aluminum or stainless steel, and has a disk shape, and has a plurality of slot structures uniformly distributed from the inside to the outside, and each ring gap structure includes a plurality of T structures. The slits of the type structure and the slits of these T-shaped structures are evenly distributed in the circumferential direction. The retardation plate 12 has a disk shape and is a low loss dielectric plate. The dielectric material thereof may be Al 2 O 3 , SiO 2 or SiN (niobium nitrogen compound). After the microwave energy passes through the retardation plate 12, the wavelength thereof is Compression, such that the microwaves produce circular polarization on the slot plate 15, the circularly polarized waves are excited by the dielectric plate 16 in the vacuum chamber 19 to produce a plasma, and the dielectric plate 16 is typically quartz. The chamber includes a cavity 18, a seal ring 17 for sealing the cavity 18 and the antenna body 11, and a support table 21 for placing the wafer 20.

第1a圖和第1b圖示出了常用的表面波電漿裝置，然而其在實際應用中卻難以獲得大面積均勻的電漿，具體原因在於：該表面波電漿裝置中的表面波天線結構採用狹縫開槽天線方式實現微波饋入，其等效於一電漿源，且在饋入時微波是以同軸的方式實現饋入的，即，來自矩形波導8的微波自滯波板12的中心區域進入滯波板12，在滯波板12內沿徑向呈發散狀傳輸，並在傳輸過程中延徑向逐漸衰減，導致能量在徑向上分佈不均勻，從而限制了所產生的電漿中分佈密度呈均勻狀態的那一部分電漿（以下簡稱為均勻的電漿）的面積大小。因而，採用狹縫開槽天線的微波饋入方式的表面波電漿裝置所能產生的均勻的電漿的面積目前最大只能適用於直徑為8寸晶片，無法實現對12寸等的更大直徑的工業級別晶片進行加工。1a and 1b show a common surface wave plasma device, but it is difficult to obtain a large area of uniform plasma in practical applications, specifically because of the surface wave antenna structure in the surface wave plasma device. The microwave feeding is realized by using a slit slotted antenna, which is equivalent to a plasma source, and the microwave is fed in a coaxial manner when feeding, that is, the microwave self-lattice plate 12 from the rectangular waveguide 8 The central region enters the retardation plate 12, and is radiated in a radial direction in the retardation plate 12, and is gradually attenuated in the radial direction during transmission, resulting in uneven distribution of energy in the radial direction, thereby limiting the generated plasma. The area of the portion of the plasma in which the density of the distribution is uniform (hereinafter referred to as uniform plasma). Therefore, the area of the uniform plasma which can be generated by the surface wave plasma device of the microwave feeding method using the slit slotted antenna can only be applied to the 8-inch diameter wafer at the maximum, and it is impossible to achieve a larger size for 12 inches or the like. Industrial grade wafers of diameter are processed.

為解決現有技術中的至少一問題，本發明提供了一種表面波電漿裝置。To address at least one of the problems in the prior art, the present invention provides a surface wave plasma device.

本發明為解決上述技術問題，提供一種表面波電漿裝置，包括依次連接的微波發生裝置、微波傳輸匹配結構和真空腔室，其中，該微波傳輸匹配結構包括矩形波導，用於傳輸該微波發生裝置產生的微波。並且，該表面波電漿裝置還包括諧振腔，其設置在該矩形波導和該真空腔室之間，並與該矩形波導密閉連通以及與該真空腔室密封連接，且該諧振腔的底壁設置有複數介電質視窗，該複數介電質視窗在該真空腔室的底面所在平面中的正投影落入該真空腔室的內壁在該平面的正投影所限定的範圍內，以分別將微波能量耦合進入該真空腔室。In order to solve the above problems, the present invention provides a surface wave plasma device comprising a microwave generating device, a microwave transmission matching structure and a vacuum chamber, which are sequentially connected, wherein the microwave transmission matching structure comprises a rectangular waveguide for transmitting the microwave generation The microwave generated by the device. Moreover, the surface wave plasma device further includes a resonant cavity disposed between the rectangular waveguide and the vacuum chamber, and is in closed communication with the rectangular waveguide and sealingly connected to the vacuum chamber, and a bottom wall of the resonant cavity Providing a plurality of dielectric windows, the orthographic projection of the plurality of dielectric windows in the plane of the bottom surface of the vacuum chamber falling into the inner wall of the vacuum chamber within a range defined by the orthographic projection of the plane, respectively Microwave energy is coupled into the vacuum chamber.

其中，該矩形波導的終端與該諧振腔密閉連通。The terminal of the rectangular waveguide is in closed communication with the resonant cavity.

其中，該矩形波導的中段區域與該諧振腔密閉連通。The middle section of the rectangular waveguide is in closed communication with the resonant cavity.

其中，該複數介電質視窗沿該真空腔室的周向均勻分佈。Wherein the plurality of dielectric windows are evenly distributed along the circumferential direction of the vacuum chamber.

其中，該複數介電質視窗採用這樣的方式設置而成：在該諧振腔的底壁上開設有複數介電質件設置孔，在每一所述介電質件設置孔中嵌置有形狀與之相匹配的介電質件。Wherein, the plurality of dielectric windows are arranged in such a manner that a plurality of dielectric material setting holes are formed in a bottom wall of the resonant cavity, and a shape is embedded in each of the dielectric material setting holes. A matching dielectric piece.

其中，每一所述介電質件的形狀為下述形狀之一：柱體、錐台、複數柱體的組合、複數錐台的組合、柱體與錐台的組合。The shape of each of the dielectric members is one of the following shapes: a cylinder, a frustum, a combination of a plurality of cylinders, a combination of a plurality of frustums, and a combination of a cylinder and a frustum.

其中，該介電質件的形狀為複數柱體的組合時，該複數柱體彼此同軸且逐級層疊設置，並且下一級柱體的直徑不大於上一級柱體的直徑；或者該介電質件的形狀為複數錐台的組合時，該複數錐台彼此同軸且逐級層疊設置，並且下一級錐台的頂面的直徑不大於上一級錐台的底面的直徑；或者該介電質件的形狀為柱體與錐台的組合時，該柱體與錐台彼此同軸且逐級層疊設置，並且下一級柱體/錐台的頂面的直徑不大於上一級柱體/錐台的底面的直徑。Wherein, when the shape of the dielectric material is a combination of a plurality of cylinders, the plurality of cylinders are coaxial with each other and stacked step by step, and the diameter of the lower stage cylinder is not larger than the diameter of the upper stage cylinder; or the dielectric When the shape of the piece is a combination of a plurality of frustums, the plurality of frustums are coaxially and stacked one on another, and the diameter of the top surface of the lower frustum is not larger than the diameter of the bottom surface of the upper frustum; or the dielectric material When the shape is a combination of a cylinder and a frustum, the cylinder and the frustum are coaxially and stacked one on another, and the diameter of the top surface of the lower-stage cylinder/frustum is not greater than the bottom surface of the upper-stage cylinder/frustum diameter of.

其中，該複數介電質視窗採用這樣的方式設置而成：在該諧振腔的底壁上開設有複數介電質件設置孔，在該諧振腔的底壁和該真空腔室之間設置有介電質件，該介電質件被設置成板狀結構且能夠覆蓋該複數介電質件設置孔；或者在該諧振腔的底壁上開設有複數介電質件設置孔，在該諧振腔的底壁和該真空腔室之間設置有介電質件，該介電質件包括安裝板以及內嵌在該安裝板中的複數介電質塊，每個該介電質塊均沿該安裝板的厚度方向貫穿該安裝板，且該複數介電質塊的數量和設置位置與該複數介電質件設置孔的數量和位置一一對應。Wherein, the plurality of dielectric windows are arranged in such a manner that a plurality of dielectric material setting holes are formed in a bottom wall of the resonant cavity, and a bottom hole between the bottom wall of the resonant cavity and the vacuum chamber is disposed a dielectric material, the dielectric material is disposed in a plate-like structure and can cover the plurality of dielectric material setting holes; or a plurality of dielectric material setting holes are formed in a bottom wall of the resonant cavity at the resonance A dielectric member is disposed between the bottom wall of the cavity and the vacuum chamber, the dielectric member comprising a mounting plate and a plurality of dielectric blocks embedded in the mounting plate, each of the dielectric blocks being along The thickness direction of the mounting plate extends through the mounting plate, and the number and arrangement positions of the plurality of dielectric blocks correspond to the number and position of the plurality of dielectric material setting holes.

其中，該介電質件的厚度的取值範圍在5~80mm。The thickness of the dielectric material ranges from 5 to 80 mm.

其中，該介電質件的最小直徑的取值範圍為40mm-120mm。Wherein, the minimum diameter of the dielectric material ranges from 40 mm to 120 mm.

其中，該表面波電漿裝置還包括第一探針，其設置在該矩形波導的中段區域，且其一端延伸至該諧振腔內，用於將該矩形波導中的微波引入到該諧振腔內。Wherein, the surface wave plasma device further includes a first probe disposed in a middle portion of the rectangular waveguide, and one end of which extends into the resonant cavity for introducing microwaves in the rectangular waveguide into the resonant cavity .

其中，該第一探針的另一端沿著背離該諧振腔的方向延伸至該矩形波導的外部。Wherein the other end of the first probe extends to the outside of the rectangular waveguide in a direction away from the resonant cavity.

其中，該第一探針採用螺接或卡接或銷接的方式進行固定。The first probe is fixed by screwing or snapping or pinning.

其中，該表面波電漿裝置還包括連接腔，其設置在該矩形波導的微波出口和該諧振腔的微波入口之間，並與二者密封連接，該第一探針的一端貫穿該連接腔並延伸至該諧振腔內。The surface wave plasma device further includes a connection cavity disposed between the microwave outlet of the rectangular waveguide and the microwave inlet of the resonant cavity, and is sealingly connected to the two, wherein one end of the first probe penetrates the connection cavity And extending into the cavity.

其中，該表面波電漿裝置還包括短路活塞，其設置在該矩形波導的後段區域，並能沿該矩形波導的軸線與之做相對運動，以調節該矩形波導有效通路的長度。Wherein, the surface wave plasma device further comprises a short-circuiting piston disposed in a rear region of the rectangular waveguide and movable relative to the axis of the rectangular waveguide to adjust the length of the effective path of the rectangular waveguide.

其中，該表面波電漿裝置還包括沿諧振腔的軸向延伸的第二探針，其上端固定在該諧振腔的頂壁上或者貫穿該諧振腔的頂壁而延伸至該諧振腔的上方，其下端位於該諧振腔的內部。Wherein, the surface wave plasma device further comprises a second probe extending along the axial direction of the resonant cavity, the upper end of which is fixed on the top wall of the resonant cavity or extends through the top wall of the resonant cavity to extend above the resonant cavity The lower end is located inside the resonant cavity.

其中，該第二探針被設置成能沿該諧振腔的軸向相對於該諧振腔的底壁升降。Wherein, the second probe is arranged to be movable up and down with respect to the bottom wall of the resonant cavity along the axial direction of the resonant cavity.

其中，該第二探針的設置位置與該介電質視窗相對應。Wherein, the second probe is disposed at a position corresponding to the dielectric window.

其中，該第二探針的數量和位置與該介電質視窗的數量和位置相對應，且該第二探針在與其相對應的該介電質視窗上的正投影與該介電質視窗同軸。Wherein the number and position of the second probes correspond to the number and position of the dielectric window, and the orthographic projection of the second probe on the corresponding dielectric window and the dielectric window Coaxial.

其中，該第二探針在與其相對應的介電質視窗上的正投影的邊緣與該介電質視窗的邊緣之間的距離不小於2cm。Wherein, the distance between the edge of the orthographic projection of the second probe on the dielectric window corresponding thereto and the edge of the dielectric window is not less than 2 cm.

其中，在該第二探針為複數的情況下，該複數第二探針在該真空腔室的底面的投影分佈在以該真空腔室的底面的中心為圓心且半徑不同的複數同心圓的圓周上；或者在該第二探針為複數的情況下，該複數第二探針在該真空腔室的底面的投影分佈在以該真空腔室的底面的中心為圓心的一圓周上。Wherein, in the case where the second probe is plural, the projection of the plurality of second probes on the bottom surface of the vacuum chamber is distributed in a plurality of concentric circles having a center of the bottom surface of the vacuum chamber and having different radii On the circumference; or in the case where the second probe is plural, the projection of the plurality of second probes on the bottom surface of the vacuum chamber is distributed on a circumference centered on the center of the bottom surface of the vacuum chamber.

其中，該諧振腔還包括升降機構，該升降機構的數量與該圓周的數量相對應，每個該升降機構用於對應地驅動位於同一圓周上的所有第二探針同步上升或同步下降；或者該升降機構的數量與該第二探針的數量相對應，每個該升降機構對應於一所述第二探針且用以驅動該第二探針上升或下降。Wherein the resonant cavity further comprises a lifting mechanism, the number of the lifting mechanism corresponding to the number of the circumferences, each of the lifting mechanisms for correspondingly driving all the second probes on the same circumference to rise synchronously or synchronously; or The number of the lifting mechanisms corresponds to the number of the second probes, and each of the lifting mechanisms corresponds to a second probe and is used to drive the second probe to rise or fall.

其中，至少在每個該第二探針的上部區域設置有外螺紋，在該諧振腔的頂壁上的設置該第二探針的位置處開設與該外螺紋相配合的螺紋孔，該螺紋孔為通孔或盲孔，該第二探針一一對應地安裝在該螺紋孔中，通過順時針或逆時針旋轉該第二探針，實現該第二探針相對於該諧振腔的底壁的升降。Wherein at least an upper portion of each of the second probes is provided with an external thread, and a threaded hole is formed at a position on the top wall of the resonant cavity where the second probe is disposed, the thread The hole is a through hole or a blind hole, and the second probe is installed in the threaded hole in one-to-one correspondence, and the second probe is rotated relative to the bottom of the resonant cavity by rotating the second probe clockwise or counterclockwise The lifting of the wall.

其中，該第二探針的下端與該諧振腔的底壁之間的豎直間距不小於10mm。Wherein, the vertical distance between the lower end of the second probe and the bottom wall of the resonant cavity is not less than 10 mm.

其中，該諧振腔的高度為10mm~200mm。The height of the resonant cavity is 10 mm to 200 mm.

本發明能夠實現以下有益效果： 本發明提供的表面波電漿裝置，在微波傳輸匹配結構和真空腔室之間設置有諧振腔，且在該諧振腔的底壁上設置有複數介電質視窗，這樣，微波在諧振腔內所形成的駐波的電場可以通過複數介電質視窗耦合進入真空腔室，由於每一介電質視窗可等效為一電漿源，因此，本發明提供的表面波電漿裝置相當於有複數電漿源同時激發電漿，因而可在真空腔室內獲得大面積的均勻的電漿，從而可滿足大尺寸的晶片加工需求。The invention can realize the following beneficial effects: The surface wave plasma device provided by the invention has a resonant cavity disposed between the microwave transmission matching structure and the vacuum chamber, and a plurality of dielectric windows are disposed on the bottom wall of the resonant cavity In this way, the electric field of the standing wave formed by the microwave in the resonant cavity can be coupled into the vacuum chamber through the plurality of dielectric windows. Since each dielectric window can be equivalent to a plasma source, the present invention provides The surface wave plasma device is equivalent to having a plurality of plasma sources simultaneously exciting the plasma, so that a large area of uniform plasma can be obtained in the vacuum chamber, thereby meeting the needs of large-sized wafer processing.

下面將結合本發明中的附圖，對本發明中的技術方案進行清楚、完整的描述，顯然，所描述的實施例是本發明的一部分實施例，而不是全部的實施例。基於本發明中的實施例，本領域普通技術人員在沒有做出創造性勞動的前提下所獲得的所有其他實施例，都屬於本發明保護的範圍。The technical solutions in the present invention are clearly and completely described in the following with reference to the accompanying drawings in which: FIG. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.

本發明提供一種表面波電漿裝置，其包括依次連接的微波發生裝置、微波傳輸匹配結構、真空腔室和諧振腔，其中：微波發生裝置用於產生微波；微波傳輸匹配結構包括矩形波導，用於傳輸微波發生裝置產生的微波；真空腔室為需要電漿環境且具有預定真空度的製程腔室，例如電漿反應腔室等；諧振腔用於使其內的微波產生諧振模式以便能夠被饋入到真空腔室19中，其設置在矩形波導和真空腔室之間，並與矩形波導密閉連通以及與真空腔室密封連接，且諧振腔的底壁設置有複數介電質視窗，該複數介電質視窗在真空腔室的底面所在平面中的正投影落入該真空腔室的內壁在該平面的正投影所限定的範圍內，以分別將微波能量耦合進入該真空腔室。需要說明的是，關於“諧振腔的底壁設置有複數介電質視窗”應當這樣理解：所謂“複數”並非是諧振腔的底壁上所設置的介電質視窗的全部數量，而是有效介電質視窗的數量，所謂有效介電質視窗指的是在製程過程中真正能夠起到電漿源的作用的介電質視窗，也就是能將微波能量耦合進入真空腔室的介電質視窗，從位置關係上來說，有效介電質視窗在真空腔室的底面所在平面中的正投影應當落入該真空腔室的內壁在該平面的正投影所限定的範圍內，在此“落入”包含完全落入和部分落入。進一步需要說明的是，所謂密閉連通，指的是諧振腔與矩形波導二者的內部空間相互連通且二者的連接處與外部環境隔絕而使二者的內部空間密閉。所謂密封連接，指的是諧振腔與真空腔室二者的內部空間不相連通且在二者的連接處進行密封而使真空腔室的內部空間與外部環境相隔絕。The invention provides a surface wave plasma device, which comprises a microwave generating device, a microwave transmission matching structure, a vacuum chamber and a resonant cavity which are sequentially connected, wherein: the microwave generating device is used for generating microwaves; the microwave transmission matching structure comprises a rectangular waveguide, The microwave generated by the microwave generating device is transmitted; the vacuum chamber is a processing chamber requiring a plasma environment and having a predetermined degree of vacuum, such as a plasma reaction chamber; and the resonant cavity is used to generate a resonant mode of the microwave therein so as to be capable of being Feeding into the vacuum chamber 19, which is disposed between the rectangular waveguide and the vacuum chamber, and is in closed communication with the rectangular waveguide and sealingly connected to the vacuum chamber, and the bottom wall of the resonant cavity is provided with a plurality of dielectric windows, The orthographic projection of the plurality of dielectric windows in the plane of the bottom surface of the vacuum chamber falls within the inner wall of the vacuum chamber within a range defined by the orthographic projection of the plane to respectively couple microwave energy into the vacuum chamber. It should be noted that the "substrate wall of the resonant cavity is provided with a plurality of dielectric windows" should be understood as follows: the so-called "complex" is not the total number of dielectric windows provided on the bottom wall of the resonant cavity, but effective The number of dielectric windows, the so-called effective dielectric window refers to the dielectric window that can actually function as a plasma source during the process, that is, the dielectric that can couple the microwave energy into the vacuum chamber. Window, in terms of positional relationship, the orthographic projection of the effective dielectric window in the plane of the bottom surface of the vacuum chamber should fall within the range defined by the orthographic projection of the vacuum chamber, where Falling into "includes complete fall and partial fall." It should be further noted that the so-called closed communication means that the internal spaces of the resonant cavity and the rectangular waveguide are in communication with each other, and the connection between the two is isolated from the external environment to seal the internal space of the two. By sealed connection, it is meant that the internal space of the cavity and the vacuum chamber are not in communication and sealed at the junction of the two to isolate the internal space of the vacuum chamber from the external environment.

以下結合第2圖至第8圖對本發明的技術方案進行詳細說明。The technical solution of the present invention will be described in detail below with reference to Figs. 2 to 8.

請參閱第2圖，其為本發明第一實施例提供的表面波電漿裝置的結構示意圖。如第2圖所示，該表面波電漿裝置包括依次連接的微波發生裝置、微波傳輸匹配結構、連接腔10、諧振腔22和真空腔室19。Please refer to FIG. 2 , which is a schematic structural diagram of a surface wave plasma device according to a first embodiment of the present invention. As shown in FIG. 2, the surface wave plasma device includes a microwave generating device, a microwave transmission matching structure, a connection chamber 10, a resonant cavity 22, and a vacuum chamber 19 which are sequentially connected.

具體地，微波發生裝置用於產生微波，其可包括依次連接的微波源供電電源1、微波源2和諧振器3。微波源供電電源1為微波源2供電；微波源2可選用磁控管，用於產生微波；諧振器3用於使微波形成諧振模式。Specifically, the microwave generating device is configured to generate microwaves, which may include a microwave source power supply 1, a microwave source 2, and a resonator 3 that are sequentially connected. The microwave source power supply 1 supplies power to the microwave source 2; the microwave source 2 can select a magnetron for generating microwaves; and the resonator 3 is used to form a resonant mode of the microwave.

微波傳輸匹配結構用於傳輸微波發生裝置產生的微波，其可包括依次連接的環流器4、定向耦合器6、阻抗調節單元7和矩形波導8，且環流器4還與諧振器3和負載5分別連接。這樣，來自微波發生裝置的微波能量經由環流器4、定向耦合器6和矩形波導8傳輸。具體地，環流器4用於將從其下游反射回來的微波與微波發生裝置相隔離，也就是使從環流器4的下游反射回來的微波不反射至微波發生裝置；負載5用於吸收自矩形波導8反射回來的反射功率；定向耦合器6用於測量入射功率和反射功率；阻抗調節單元7用於調節微波的諧振模式；矩形波導8用於傳輸微波。The microwave transmission matching structure is for transmitting microwaves generated by the microwave generating device, which may include a cyclone 4, a directional coupler 6, an impedance adjusting unit 7, and a rectangular waveguide 8, which are sequentially connected, and the circulator 4 is also connected to the resonator 3 and the load 5 Connect separately. Thus, microwave energy from the microwave generating device is transmitted via the cyclone 4, the directional coupler 6, and the rectangular waveguide 8. Specifically, the circulator 4 is used to isolate the microwave reflected from the downstream thereof from the microwave generating device, that is, the microwave reflected from the downstream of the circulator 4 is not reflected to the microwave generating device; the load 5 is used to absorb the rectangular shape The reflected power reflected from the waveguide 8; the directional coupler 6 is used to measure the incident power and the reflected power; the impedance adjusting unit 7 is used to adjust the resonant mode of the microwave; and the rectangular waveguide 8 is used to transmit the microwave.

連接腔10用於為矩形波導8內的微波向諧振腔22傳輸提供通道，其形狀呈筒形，上端開口與矩形波導8密封連接，下端開口與諧振腔22密封連接，以此實現矩形波導8與諧振腔22的密閉連通。本實施例中，在矩形波導8的中段區域的下表面開設有與連接腔10相配合的微波出口，連接腔10的上端開口與該微波出口密封連接。The connecting cavity 10 is configured to provide a channel for the microwaves in the rectangular waveguide 8 to be transmitted to the resonant cavity 22, and has a cylindrical shape, the upper end opening is sealingly connected with the rectangular waveguide 8, and the lower end opening is sealingly connected with the resonant cavity 22, thereby realizing the rectangular waveguide 8 It is in closed communication with the resonant cavity 22. In this embodiment, a microwave outlet is formed on the lower surface of the middle portion of the rectangular waveguide 8 to cooperate with the connection cavity 10. The upper end opening of the connection cavity 10 is sealingly connected to the microwave outlet.

諧振腔22用於使其內的微波產生諧振模式以便能夠被饋入到真空腔室19中，其為中空的空腔結構，設置在連接腔10和真空腔室19之間，其頂壁開設有微波入口，連接腔10的下端開口與該微波入口密封連接。通常，諧振腔22採用諸如不銹鋼、鋁合金等的金屬製作，並且可以根據具體情況設計為圓柱形、長方形或者正方形等的任意形狀的空腔。The cavity 22 is used to generate a resonant mode of the microwaves therein so as to be able to be fed into the vacuum chamber 19, which is a hollow cavity structure, disposed between the connection chamber 10 and the vacuum chamber 19, the top wall of which is opened There is a microwave inlet, and the lower end opening of the connection chamber 10 is sealingly connected to the microwave inlet. Generally, the resonant cavity 22 is made of a metal such as stainless steel, aluminum alloy, or the like, and may be designed into a cavity of any shape such as a cylindrical shape, a rectangular shape, or a square shape, as the case may be.

真空腔室19內設置有用於放置晶片等被加工工件的支撐台21。真空腔室19用於為被加工工件提供真空環境和電漿環境，例如，真空腔室19可以為電漿刻蝕腔室等。真空腔室19通常採用鋁合金、不銹鋼等金屬材料製成。A support table 21 for placing a workpiece to be processed such as a wafer is disposed in the vacuum chamber 19. The vacuum chamber 19 is used to provide a vacuum environment and a plasma environment for the workpiece to be processed. For example, the vacuum chamber 19 may be a plasma etching chamber or the like. The vacuum chamber 19 is usually made of a metal material such as aluminum alloy or stainless steel.

下面對本發明中的矩形波導和諧振腔等核心部件進行更詳細的說明。The core components such as the rectangular waveguide and the resonant cavity in the present invention will be described in more detail below.

首先，對矩形波導及其相關配件進行詳細說明。First, the rectangular waveguide and its related accessories will be described in detail.

矩形波導8水準放置，其起始端與阻抗調節單元7相連，其終端為自由端，其中段區域的下表面開設有用於與連接腔10連通的微波出口。The rectangular waveguide 8 is placed at a level, and its initial end is connected to the impedance adjusting unit 7, and its terminal end is a free end, wherein the lower surface of the segment area is provided with a microwave outlet for communicating with the connecting chamber 10.

為了將矩形波導8中的微波能量饋入到位於矩形波導8的下方的諧振腔22，而在該矩形波導8的中段區域設置有金屬材質的第一探針23。本實施例中，第一探針23為螺釘探針，即該螺釘探針通過螺紋連接（簡稱為“螺接”）的方式設置在該矩形波導8中。該螺釘探針23自矩形波導8的中段區域的上方沿諧振腔22的軸向依次貫穿矩形波導8和連接腔10，並伸入諧振腔22內。In order to feed the microwave energy in the rectangular waveguide 8 to the resonant cavity 22 located below the rectangular waveguide 8, a first probe 23 of a metallic material is disposed in the middle portion of the rectangular waveguide 8. In the present embodiment, the first probe 23 is a screw probe, that is, the screw probe is disposed in the rectangular waveguide 8 by means of a screw connection (referred to as "screw"). The screw probe 23 sequentially penetrates the rectangular waveguide 8 and the connecting cavity 10 from the axial direction of the resonant cavity 22 from above the middle portion of the rectangular waveguide 8, and extends into the resonant cavity 22.

較佳地，在矩形波導8的後段區域設置有短路活塞9，使其在矩形波導8上的位置能夠調節，即，短路活塞9在矩形波導8的軸線方向上的位置可改變。Preferably, a short-circuiting piston 9 is provided in the rear section of the rectangular waveguide 8 so that its position on the rectangular waveguide 8 can be adjusted, that is, the position of the short-circuiting piston 9 in the axial direction of the rectangular waveguide 8 can be changed.

在實際應用中，微波能量在矩形波導8內沿軸向向終端方向傳輸並到達該短路活塞9時，該微波能量會被短路活塞9反射回來。通常，將矩形波導8的起始端至短路活塞9之間的那一段矩形波導8稱為矩形波導8的有效通路，即，微波能量自矩形波導8的起始端向其終端傳輸時的實際傳輸路徑。通過調節短路活塞9在矩形波導8上的位置，可以調節該有效通路的長度。例如，可以通過下述設置方式和調節方式來實現短路活塞9的位置可調：短路活塞9設置在矩形波導8的內部，二者之間的配合方式可類似於活塞與汽缸的配合方式；並且，短路活塞9的驅動端設置在矩形波導8的外部，在該驅動端的作用下，短路活塞9可以在矩形波導8的內部前後運動，從而實現其在矩形波導8上的位置可調。In practical applications, when microwave energy is transmitted axially in the terminal direction in the rectangular waveguide 8 and reaches the short-circuiting piston 9, the microwave energy is reflected back by the short-circuiting piston 9. In general, the rectangular waveguide 8 between the start end of the rectangular waveguide 8 and the short-circuiting piston 9 is referred to as the effective path of the rectangular waveguide 8, that is, the actual transmission path when the microwave energy is transmitted from the beginning end of the rectangular waveguide 8 to its terminal end. . By adjusting the position of the short-circuiting piston 9 on the rectangular waveguide 8, the length of the effective path can be adjusted. For example, the position of the short-circuiting piston 9 can be adjusted by the following arrangement and adjustment mode: the short-circuiting piston 9 is disposed inside the rectangular waveguide 8, and the cooperation between the two can be similar to that of the piston and the cylinder; The driving end of the short-circuiting piston 9 is disposed outside the rectangular waveguide 8, and under the action of the driving end, the short-circuiting piston 9 can be moved back and forth inside the rectangular waveguide 8, thereby realizing its positional adjustment on the rectangular waveguide 8.

在實際應用中，矩形波導8可以選用標準件。常用的2450MHz的微波所對應的標準矩形波導的型號有：GB BJ-22、BB-22、BJ-26，各種型號的矩形波導的橫截面尺寸不同，本發明實施例中可以選用GB BJ-26型號的矩形波導。In practical applications, the rectangular waveguide 8 can be selected from standard parts. The standard rectangular waveguides corresponding to the commonly used 2450 MHz microwaves are: GB BJ-22, BB-22, BJ-26, and the cross-sectional dimensions of the rectangular waveguides of various types are different. In the embodiment of the present invention, GB BJ-26 can be selected. Model rectangular waveguide.

下面詳細說明微波能量在矩形波導8中的傳輸情形。The transmission of microwave energy in the rectangular waveguide 8 will be described in detail below.

在微波能量從矩形波導8的起始端向終端方向傳輸的過程中，一部分微波能量在矩形波導8的中段區域從左邊與螺釘探針23相遇並改變傳輸方向，即，該部分微波能量不再繼續沿矩形波導8的軸向傳輸而是沿螺釘探針23的軸向向下傳輸並經由連接腔10直接進入諧振腔22內的左半部分；另一部分微波能量未與螺釘探針23相遇，而是直接到達螺釘探針23的右側並繼續向矩形波導8的終端方向傳輸，並在到達短路活塞9時被短路活塞9反射回來。其中，一部分反射回來的微波能量會越過螺釘探針23並經由阻抗調節單元7、定向耦合器6、環流器4而傳輸至負載5並被其吸收；另一部分反射回來的微波能量從右邊與螺釘探針23相遇並改變傳輸方向，即，該部分微波能量不再繼續沿矩形波導8的軸向傳輸而是沿螺釘探針23的軸向向下傳輸並經由連接腔10直接進入諧振腔22內的右半部分。During the transmission of microwave energy from the beginning end of the rectangular waveguide 8 to the terminal direction, a part of the microwave energy meets the screw probe 23 from the left side in the middle region of the rectangular waveguide 8 and changes the transmission direction, that is, the part of the microwave energy does not continue. The axial transmission along the rectangular waveguide 8 is transmitted downward in the axial direction of the screw probe 23 and directly enters the left half of the cavity 22 via the connection cavity 10; the other part of the microwave energy does not meet the screw probe 23, and It is directly to the right side of the screw probe 23 and continues to be transmitted toward the terminal end of the rectangular waveguide 8, and is reflected back by the short-circuiting piston 9 when it reaches the short-circuiting piston 9. Wherein, a portion of the reflected microwave energy will pass over the screw probe 23 and be transmitted to and absorbed by the load 5 via the impedance adjusting unit 7, the directional coupler 6, and the circulator 4; the other portion of the reflected microwave energy from the right side and the screw The probes 23 meet and change the direction of transmission, i.e., the portion of the microwave energy no longer continues to travel along the axial direction of the rectangular waveguide 8 but instead travels down the axial direction of the screw probe 23 and directly into the cavity 22 via the connection chamber 10. The right half.

由上可知，借助螺釘探針23可以將矩形波導8內的微波能量饋入到諧振腔22內。並且，通過調節短路活塞9在矩形波導8上的位置，可以均衡饋入諧振腔22左、右兩部分的微波能量，實現微波能量在諧振腔內部重新分配，從而將饋入諧振腔內的微波能量均勻化，為使真空腔室內電漿大面積均勻化提供保證。As can be seen from the above, the microwave energy in the rectangular waveguide 8 can be fed into the resonant cavity 22 by means of the screw probe 23. Moreover, by adjusting the position of the short-circuiting piston 9 on the rectangular waveguide 8, the microwave energy fed into the left and right portions of the resonant cavity 22 can be balanced, and the microwave energy can be redistributed inside the resonant cavity, thereby feeding the microwave into the resonant cavity. The energy is homogenized to ensure a large area uniformity of the plasma in the vacuum chamber.

需要說明的是，螺釘探針23的外徑尺寸和連接腔10的內徑尺寸與微波的傳輸功率（傳輸效率）存在著相關性，具體地，螺釘探針23的外徑尺寸與微波的傳輸功率（傳輸效率）呈負相關的關係，連接腔10的內徑尺寸與微波的傳輸功率（傳輸效率）呈正相關的關係，也就是說，在連接腔10中***有螺釘探針23的情況下，螺釘探針23的外壁與連接腔10的內壁之間的間隙越大，微波的傳輸功率（傳輸效率）就會越高。在實際應用中，螺釘探針23的外徑和連接腔10的內徑的比值決定了最大傳輸功率，該比值可以根據同軸波導的傳輸特性，通過該結構下空氣的擊穿電壓計算得到。通常，該比值的取值範圍可以為1.65~3.59，其中這兩個端點數值分別對應了最大傳輸功率和最小損耗。由此可知，通過選定不同外徑尺寸的螺釘探針23和/或選定不同內徑尺寸的連接腔10，可以調節微波的傳輸功率，從而達到期望的微波傳輸效率和期望的損耗。It should be noted that the outer diameter dimension of the screw probe 23 and the inner diameter dimension of the connection cavity 10 are related to the transmission power (transmission efficiency) of the microwave, specifically, the outer diameter size of the screw probe 23 and the transmission of the microwave. The power (transmission efficiency) is negatively correlated, and the inner diameter dimension of the connection chamber 10 is positively correlated with the transmission power (transmission efficiency) of the microwave, that is, in the case where the screw probe 23 is inserted in the connection chamber 10. The larger the gap between the outer wall of the screw probe 23 and the inner wall of the connection chamber 10, the higher the transmission power (transmission efficiency) of the microwave. In practical applications, the ratio of the outer diameter of the screw probe 23 to the inner diameter of the connecting chamber 10 determines the maximum transmission power, which can be calculated from the breakdown voltage of the air under the structure according to the transmission characteristics of the coaxial waveguide. Generally, the ratio may range from 1.65 to 3.59, where the two endpoint values correspond to the maximum transmission power and the minimum loss, respectively. It can be seen that by selecting screw probes 23 of different outer diameter sizes and/or selecting connection cavities 10 of different inner diameters, the transmission power of the microwaves can be adjusted to achieve the desired microwave transmission efficiency and desired loss.

還需要說明的是，螺釘探針23伸入諧振腔22內的長度與電場饋入效率之間存在相關性，通過調節螺釘探針23伸入諧振腔22內的長度，可以調節電場饋入效率，提高微波利用率。事實上，螺釘探針23伸入諧振腔22內的長度與電場饋入效率之間的相關關係並非線性關係；而且，除了與螺釘探針23伸入諧振腔22內的長度相關之外，電場饋入效率還與諧振腔22的高度、諧振腔22內的介電質視窗的數量和分佈等因素相關，因此需要綜合整個諧振腔22的結構，才能獲得最優的微波利用效率。It should also be noted that there is a correlation between the length of the screw probe 23 extending into the cavity 22 and the electric field feeding efficiency. By adjusting the length of the screw probe 23 extending into the cavity 22, the electric field feeding efficiency can be adjusted. Improve microwave utilization. In fact, the relationship between the length of the screw probe 23 extending into the cavity 22 and the electric field feed efficiency is nonlinear and; in addition to the length associated with the insertion of the screw probe 23 into the cavity 22, the electric field The feed efficiency is also related to the height of the cavity 22, the number and distribution of the dielectric windows in the cavity 22, and so the structure of the entire cavity 22 needs to be integrated to achieve optimum microwave utilization efficiency.

進一步需要說明的是，儘管本實施例中的第一探針23為螺釘探針並且通過螺接的方式固定在矩形波導8中，但是本發明並不局限於此，而是也可以將第一探針23設置成光柱的形式，且可採用卡接或銷接的方式固定在矩形波導8中。進一步地，當第一探針23為螺釘探針的形式時，除螺接固定方式外，還可以採用卡接或銷接的方式對其進行固定。It should be further noted that although the first probe 23 in this embodiment is a screw probe and is fixed in the rectangular waveguide 8 by screwing, the present invention is not limited thereto, but may be the first The probe 23 is provided in the form of a light column and can be fixed in the rectangular waveguide 8 by snapping or pinning. Further, when the first probe 23 is in the form of a screw probe, in addition to the screw fixing manner, it may be fixed by means of snapping or pinning.

接下來，對諧振腔及其相關配件進行詳細說明。Next, the resonant cavity and its related accessories will be described in detail.

諧振腔22置於真空腔室19的側壁的頂端，借助諧振腔22的底壁對真空腔室19進行封堵，使真空腔室19的內部形成封閉的製程環境。諧振腔22的底壁設置有複數介電質視窗，介電質視窗用於將微波能量耦合進入真空腔室19以產生電漿，並形成表面波的邊界條件。也就是說，真空腔室19設置在諧振腔22的下方，微波在諧振腔22內形成駐波，駐波的電場通過介電質視窗耦合進入真空腔室19，在真空腔室19內激發電漿，並在電漿的密度大於形成表面波電漿的臨界密度時，在介電質視窗的下表面形成表面波。The cavity 22 is placed at the top end of the side wall of the vacuum chamber 19, and the vacuum chamber 19 is blocked by the bottom wall of the cavity 22 to form a closed process environment inside the vacuum chamber 19. The bottom wall of the cavity 22 is provided with a plurality of dielectric windows for coupling microwave energy into the vacuum chamber 19 to generate plasma and to form surface boundary conditions. That is, the vacuum chamber 19 is disposed below the resonant cavity 22, and the microwave forms a standing wave in the resonant cavity 22, and the electric field of the standing wave is coupled into the vacuum chamber 19 through the dielectric window to excite the electricity in the vacuum chamber 19. The slurry forms a surface wave on the lower surface of the dielectric window when the density of the plasma is greater than the critical density of the surface wave plasma.

由於電場饋入效率與諧振腔22的高度有關，為了能夠對諧振腔22的高度進行調節，較佳地，將諧振腔22設置成這樣的形式：諧振腔22由複數金屬環疊置形成，每一金屬環的結構類似於墊片，複數疊置的金屬環構成諧振腔22的側壁，複數疊置的金屬環的中空部分限定出諧振腔22的腔室。在實際應用中，可以根據需要選定金屬環的數量從而獲得相應高度的諧振腔22。例如，諧振腔22的高度可以為10mm-200mm，考慮到裝置體積和製造成本，諧振腔22的高度較佳為10mm-85mm。至於諧振腔22的材料，通常可以採用不銹鋼等金屬材料。Since the electric field feeding efficiency is related to the height of the resonant cavity 22, in order to be able to adjust the height of the resonant cavity 22, it is preferable to set the resonant cavity 22 in such a form that the resonant cavity 22 is formed by stacking a plurality of metal rings, each The structure of a metal ring is similar to a shim. The plurality of stacked metal rings form the side walls of the resonant cavity 22, and the hollow portions of the plurality of stacked metal rings define the cavity of the resonant cavity 22. In practical applications, the number of metal rings can be selected as needed to obtain a resonant cavity 22 of a corresponding height. For example, the height of the resonant cavity 22 may be 10 mm to 200 mm, and the height of the resonant cavity 22 is preferably 10 mm to 85 mm in consideration of device volume and manufacturing cost. As the material of the cavity 22, a metal material such as stainless steel can be usually used.

本發明實施例利用連接腔連接諧振腔和矩形波導，將螺釘探針經由矩形波導和連接腔伸入諧振腔內部，從而將微波能量饋入連接腔和諧振腔，通過在諧振腔的底壁設置複數介電質視窗，使得微波在諧振腔內形成的駐波的電場能夠通過各介電質視窗耦合進入真空腔室，並在真空腔室內激發電漿，因此，複數介電質視窗可以等效為複數電漿源，相對於現有的單一電漿源來說，這種結構的表面波電漿裝置可以在真空腔室內獲得大面積的均勻的電漿，從而滿足大尺寸的晶片加工需求。In the embodiment of the invention, the connecting cavity is connected to the resonant cavity and the rectangular waveguide, and the screw probe is inserted into the cavity through the rectangular waveguide and the connecting cavity, thereby feeding the microwave energy into the connecting cavity and the resonant cavity, and setting through the bottom wall of the resonant cavity The plurality of dielectric windows allow the electric field of the standing wave formed by the microwave in the resonant cavity to be coupled into the vacuum chamber through the respective dielectric windows, and the plasma is excited in the vacuum chamber, so that the plurality of dielectric windows can be equivalent For a plurality of plasma sources, the surface wave plasma device of this structure can obtain a large area of uniform plasma in the vacuum chamber compared to the existing single plasma source, thereby meeting the needs of large-scale wafer processing.

下面結合第3圖至第5圖詳細說明設置在諧振腔底壁的介電質視窗的結構及其功能。其中，第3圖為諧振腔的底壁的俯視圖；第4圖為沿第3圖中的A-A’對諧振腔的底壁進行剖切所得到的剖面圖；第5圖為處於分離狀態下的介電質件和介電質件設置孔的剖視圖。The structure and function of the dielectric window provided on the bottom wall of the resonator will be described in detail below with reference to Figs. 3 to 5. 3 is a top view of the bottom wall of the resonant cavity; FIG. 4 is a cross-sectional view of the bottom wall of the resonant cavity taken along A-A' in FIG. 3; FIG. 5 is in a separated state. A cross-sectional view of the lower dielectric member and the dielectric member.

如第3圖和第4圖所示，在本發明實施例中，介電質視窗可以採用這樣的方式設置形成：在諧振腔的底壁上開設有複數介電質件設置孔26，在每一介電質件設置孔26中嵌置有形狀與之相匹配的介電質件24，借助於該介電質件24，可以在每一介電質件設置孔26處形成介電質視窗。具體地，在諧振腔22的底壁上設置有6個介電質件24，它們沿真空腔室19的周向環繞形成一圈，每一介電質件24在製程時均相當於一電漿源。較佳地，6個介電質件24沿真空腔室19的周向均勻排布，這樣，借助於排布成一圈的6個電漿源，可以獲得大面積的電漿，並且由於6個介電質件24沿真空腔室19的周向均勻排布，因此電漿的分佈較為均勻。由於被加工工件在真空腔室19內通常是與真空腔室19同心設置或者設置在真空腔室19的同心圓上，因此更為較佳地，使6個介電質件24沿真空腔室19的周向均勻地排布在與真空腔室19同心的圓上，從而使真空腔室19內的電漿相對於被加工工件能更均勻地分佈。更為較佳地，為了提高邊緣區域的電漿的密度，可以將介電質件24自真空腔室19的中心向邊緣排布成多層（即，多圈），使真空腔室19的邊緣區域也能夠獲得期望密度的電漿；並且對於每一層而言，可以將複數介電質件24沿真空腔室19的周向均勻地排布在與真空腔室19同心的圓上，這樣，多層介電質件24便形成複數同心圓。更為較佳地，為了有效地激發和利用電漿，可以使該複數介電質件24在真空腔室19的底面所在平面中的正投影落在該真空腔室19的內壁在該平面的正投影所限定的範圍內，也就是說，當諧振腔22的內壁在真空腔室19的底面所在平面中的正投影在該真空腔室19的內壁在該平面的正投影的外側時，如果將介電質件24設置得過於靠近諧振腔22的內壁以至於其在真空腔室19的底面所在平面中的正投影未能落在該真空腔室19的內壁在該平面的正投影所限定的範圍內，則會導致該介電質件24在真空腔室19內的所激發和利用的電漿較少。As shown in FIG. 3 and FIG. 4, in the embodiment of the present invention, the dielectric window can be formed in such a manner that a plurality of dielectric material setting holes 26 are opened on the bottom wall of the resonant cavity. A dielectric member 24 having a shape matching therein is embedded in a dielectric member mounting hole 26, and a dielectric window can be formed at each dielectric member setting hole 26 by means of the dielectric member 24. . Specifically, six dielectric members 24 are disposed on the bottom wall of the resonant cavity 22, and they form a circle around the circumferential direction of the vacuum chamber 19. Each dielectric member 24 is equivalent to an electric power during the manufacturing process. Slurry source. Preferably, the six dielectric members 24 are evenly arranged along the circumferential direction of the vacuum chamber 19, so that a large area of plasma can be obtained by means of six plasma sources arranged in a circle, and due to six The dielectric members 24 are evenly arranged along the circumferential direction of the vacuum chamber 19, so that the distribution of the plasma is relatively uniform. Since the workpiece to be machined is usually disposed concentrically with the vacuum chamber 19 or disposed on the concentric circle of the vacuum chamber 19 in the vacuum chamber 19, it is more preferable to have the six dielectric members 24 along the vacuum chamber. The circumferential direction of 19 is evenly distributed on a circle concentric with the vacuum chamber 19, so that the plasma in the vacuum chamber 19 can be more evenly distributed with respect to the workpiece to be processed. More preferably, in order to increase the density of the plasma in the edge region, the dielectric member 24 may be arranged in multiple layers (i.e., multiple turns) from the center to the edge of the vacuum chamber 19 to make the edge of the vacuum chamber 19. The region is also capable of obtaining a plasma of a desired density; and for each layer, the plurality of dielectric members 24 can be evenly arranged in a circle concentric with the vacuum chamber 19 in the circumferential direction of the vacuum chamber 19, such that The multilayer dielectric member 24 forms a plurality of concentric circles. More preferably, in order to effectively excite and utilize the plasma, an orthographic projection of the plurality of dielectric members 24 in the plane of the bottom surface of the vacuum chamber 19 may fall on the inner wall of the vacuum chamber 19 at the plane. Within the range defined by the orthographic projection, that is, when the inner wall of the cavity 22 is projected in the plane of the bottom surface of the vacuum chamber 19, the inner wall of the vacuum chamber 19 is outside the orthographic projection of the plane. At this time, if the dielectric member 24 is placed too close to the inner wall of the cavity 22 so that its orthographic projection in the plane of the bottom surface of the vacuum chamber 19 fails to fall on the inner wall of the vacuum chamber 19 in the plane Within the range defined by the orthographic projections, the dielectric material 24 is less excited and utilized in the vacuum chamber 19.

可以採用這樣的方式將介電質件24安裝到諧振腔22的底壁上，例如，不在諧振腔22的底壁開設介電質件設置孔，而是直接將介電質件24放置在諧振腔22的底壁上，其突出於諧振腔22的底壁；或者在諧振腔22的底壁上開設有數量與介電質件24的數量相同的複數介電質件設置孔26，該複數介電質件設置孔26的形狀與該複數介電質件24的形狀一一對應，且每一介電質件設置孔26中均嵌置有形狀與之相匹配的介電質件24。The dielectric member 24 can be mounted to the bottom wall of the cavity 22 in such a manner that, for example, the dielectric member is not provided in the bottom wall of the cavity 22, but the dielectric member 24 is directly placed in the resonance. a bottom wall of the cavity 22 protruding from the bottom wall of the resonant cavity 22; or a plurality of dielectric member setting holes 26 having the same number as the number of the dielectric members 24 are formed on the bottom wall of the cavity 22, the plurality The shape of the dielectric member-providing holes 26 is in one-to-one correspondence with the shape of the plurality of dielectric members 24, and each of the dielectric member-providing holes 26 is embedded with a dielectric member 24 having a shape matched thereto.

下面詳細說明介電質件24的結構以及其與介電質件設置孔26的配合。The structure of the dielectric member 24 and its cooperation with the dielectric member setting holes 26 will be described in detail below.

請一併參閱第3圖至第5圖，本實施例中的介電質件24的形狀類似於兩個圓柱體（第一柱體241和第二柱體242）的組合，第一柱體241與第二柱體242同軸設置且彼此層疊，第一柱體241位於上方且其直徑大於第二柱體242的直徑，從而形成倒置的“凸”字型。對應地，介電質件設置孔26設置成與介電質件24相匹配的倒置的“凸”字型，具體地，該介電質件設置孔26的沉孔261為柱形沉孔，過孔262為光孔。在介電質件24安置於介電質件設置孔26內時，第一柱體241置於沉孔261內，第二柱體242置於過孔262內。其中，第二柱體242的高度應當大於等於過孔262的深度，即，使第二柱體241的下表面與諧振腔22的底壁的下表面平齊或者向下凸出於諧振腔22的底壁的下表面，從而將微波在諧振腔內所形成的駐波的電場耦合進入真空腔室19。Referring to FIG. 3 to FIG. 5 together, the shape of the dielectric member 24 in this embodiment is similar to the combination of two cylinders (the first cylinder 241 and the second cylinder 242), the first cylinder The 241 is disposed coaxially with the second cylinder 242 and stacked on each other, the first cylinder 241 being located above and having a diameter larger than the diameter of the second cylinder 242, thereby forming an inverted "convex" shape. Correspondingly, the dielectric material setting hole 26 is disposed in an inverted "convex" shape matching the dielectric material 24, and specifically, the counterbore 261 of the dielectric material setting hole 26 is a cylindrical counterbore. The via 262 is a light hole. When the dielectric member 24 is disposed in the dielectric member setting hole 26, the first cylinder 241 is placed in the counterbore 261, and the second cylinder 242 is placed in the via 262. The height of the second pillar 242 should be greater than or equal to the depth of the via 262, that is, the lower surface of the second pillar 241 is flush with the lower surface of the bottom wall of the resonant cavity 22 or protrudes downward from the cavity 22 The lower surface of the bottom wall couples the electric field of the standing wave formed by the microwaves within the cavity into the vacuum chamber 19.

本實施例中的介電質件24為兩個柱體的組合，其最小直徑為第二柱體242的直徑。由於介電質件24的面積會對介電質件24總體的設置數量產生影響，例如，對於同一同心圓上設置的介電質件24而言，單個介電質件24的面積越大，則能夠設置的數量越少，因此在確定介電質件24的最小直徑時，需要綜合考量單個介電質件24的面積和介電質件24總體的設置數量，在實際應用中，介電質件24的最小直徑較佳地設置為40mm-120mm，例如本實施例中，第二柱體242的直徑可設置為60mm，第一柱體241的直徑可設置為90mm。The dielectric member 24 in this embodiment is a combination of two cylinders having a minimum diameter that is the diameter of the second cylinder 242. Since the area of the dielectric member 24 affects the overall number of dielectric members 24, for example, for a dielectric member 24 disposed on the same concentric circle, the larger the area of the single dielectric member 24, The smaller the number that can be set, the more the diameter of the single dielectric member 24 and the total number of the dielectric members 24 need to be comprehensively considered in determining the minimum diameter of the dielectric member 24. In practical applications, the dielectric The minimum diameter of the mass member 24 is preferably set to 40 mm to 120 mm. For example, in the present embodiment, the diameter of the second cylinder 242 may be set to 60 mm, and the diameter of the first cylinder 241 may be set to 90 mm.

需要說明的是，本發明上述實施例所述的介電質件和介電質件設置孔的形狀及裝配方式是一種便於加工、安裝和固定的較佳實施方式，在實際應用中，介電質件以及介電質件設置孔的形狀可以不限於此，例如，介電質件可以被設置成單個柱體或者單個錐台或者柱體與錐台的組合或者複數錐台的組合，相應地，介電質件設置孔可以被設置成單個柱體形狀的孔或者單個錐台形狀的孔或者柱體與錐台的組合的形狀的孔或者複數錐台的組合的形狀的孔，其中，所謂柱體包括圓柱和棱柱，所謂錐台包括圓錐台和棱錐台，所謂複數指的是兩個以上。在實際應用中，諧振腔22的底壁上的複數介電質件的形狀無需彼此相同。進一步地，本發明實施例中的介電質件可以由石英、陶瓷、表面塗覆有三氧化二釔的石英或者表面塗覆有三氧化二釔的陶瓷等材料製成。It should be noted that the shape and assembly manner of the dielectric member and the dielectric member providing hole in the above embodiments of the present invention are a preferred embodiment for facilitating processing, mounting and fixing. In practical applications, the dielectric is dielectric. The shape of the mass and the dielectric member setting hole may not be limited thereto, for example, the dielectric member may be provided as a single cylinder or a single frustum or a combination of a cylinder and a frustum or a combination of a plurality of frustums, respectively The dielectric member setting hole may be provided as a single cylinder-shaped hole or a single frustum-shaped hole or a combination of a shape of a cylinder and a frustum or a combination of a plurality of frustums, wherein The cylinder includes a cylinder and a prism, and the so-called frustum includes a truncated cone and a frustum, and the plural refers to two or more. In practical applications, the shapes of the plurality of dielectric members on the bottom wall of the cavity 22 need not be identical to each other. Further, the dielectric material in the embodiment of the present invention may be made of quartz, ceramic, quartz coated with antimony trioxide or ceramic coated with antimony trioxide.

還需要說明的是，當介電質件和介電質件設置孔為單個錐台狀時，較佳地，將該錐台的頂面的直徑設置得大於底面的直徑，從而可以借助於介電質件的自重而將其更牢固地安裝在介電質件設置孔內。當介電質件被設置成複數柱體的組合（例如第6A圖所示的兩個柱體組合結構）時，複數柱體彼此同軸且逐級層疊設置，並且為了便於安裝和拆卸該介電質件，下一級柱體的直徑不大於上一級柱體的直徑。當介電質件被設置成複數錐台的組合（例如第6B圖和第6C圖所示的兩級錐台結構）時，複數錐台彼此同軸且逐級層疊設置，並且為了便於安裝和拆卸該介電質件，下一級錐台的頂面的直徑不大於上一級錐台的底面的直徑。當介電質件被設置成柱體與錐台的組合（例如第6D圖至第6G圖所示的柱體和錐台組合結構）時，柱體與錐台彼此同軸且逐級層疊設置，並且為了便於安裝和拆卸該介電質件，下一級柱體/錐台的頂面的直徑不大於上一級柱體/錐台的底面的直徑。其中，所謂“上一級”和“下一級”中的“上”和“下”並非依據位置關係中的“上”和“下”而定，而是依據裝配時伸入介電質件設置孔的先後順序而定，具體地，先伸入介電質件設置孔的那一級稱為“下一級”，緊隨該“下一級”而伸入到介電質件設置孔的那一級稱為該“下一級”的上一級，也就是說，對於兩級的而言，當從諧振腔的底壁的上方將介電質件安裝到介電質件設置孔時，在位置關係上處於下面的那一級先伸入到介電質件設置孔中，故而稱為下一級，在位置關係上處於上面的那一級稱為上一級；反之，當從諧振腔的底壁的下方將介電質件安裝到介電質件設置孔時，在位置關係上處於上面的那一級先伸入到介電質件設置孔中而被稱為下一級，在位置關係上處於下面的那一級稱為上一級。在實際應用中，可以根據需要設置級數。並且，為了更為方便、牢固地安裝和固定介電質件24，較佳地，從諧振腔22的底壁的上方安裝介電質件24，以借助介電質件24自身的重量將介電質件24固定在諧振腔22的底壁上。It should be noted that, when the dielectric material and the dielectric member are provided in a single frustum shape, preferably, the diameter of the top surface of the frustum is set to be larger than the diameter of the bottom surface, so that The weight of the electrical component is more securely mounted within the dielectric member setting aperture. When the dielectric material is disposed in a combination of a plurality of cylinders (for example, the two cylinder combination structures shown in FIG. 6A), the plurality of cylinders are coaxially and stacked one on another, and the dielectric is installed and disassembled for convenience. For the mass, the diameter of the lower stage cylinder is not larger than the diameter of the upper stage cylinder. When the dielectric material is set to a combination of a plurality of frustums (for example, the two-stage frustum structure shown in FIGS. 6B and 6C), the plurality of frustums are coaxially and stacked one on another, and are convenient for mounting and dismounting. The dielectric member has a diameter of a top surface of the lower stage frustum not larger than a diameter of a bottom surface of the upper stage frustum. When the dielectric material is disposed in a combination of a cylinder and a frustum (for example, a column and frustum combination structure shown in FIGS. 6D to 6G), the cylinder and the frustum are coaxially and stacked one on another. And in order to facilitate the installation and disassembly of the dielectric member, the diameter of the top surface of the lower stage cylinder/frustum is not larger than the diameter of the bottom surface of the upper stage cylinder/frustum. The "upper" and "lower" in the "upper level" and "lower level" are not based on the "upper" and "lower" positions in the positional relationship, but rather the holes are formed in the dielectric material according to the assembly. The order of the first step into the dielectric member setting hole is referred to as the "lower level", and the level that extends into the dielectric material setting hole immediately following the "lower level" is called The upper level of the "lower level", that is, for the two stages, when the dielectric material is mounted to the dielectric material setting hole from above the bottom wall of the resonant cavity, it is below the positional relationship The first stage first protrudes into the dielectric material setting hole, so it is called the next stage, and the level which is above the positional relationship is called the upper level; otherwise, when the dielectric material is from the lower side of the bottom wall of the resonant cavity When the device is mounted to the dielectric material setting hole, the level at which the position is in the upper position first protrudes into the dielectric material setting hole and is referred to as the next level, and the level at the positional relationship is referred to as the lower level. Level one. In practical applications, you can set the number of stages as needed. Moreover, in order to more conveniently and securely mount and fix the dielectric member 24, preferably, the dielectric member 24 is mounted from above the bottom wall of the resonant cavity 22 to be introduced by the weight of the dielectric member 24 itself. The electrical component 24 is attached to the bottom wall of the resonant cavity 22.

較佳地，為了實現介電質件與諧振腔的底壁二者之間的良好密封，而在二者之間設置諸如密封圈的密封件。下面結合第2圖和第5圖詳細說明介電質件24與諧振腔22的底壁二者之間的密封。Preferably, in order to achieve a good seal between the dielectric member and the bottom wall of the resonant cavity, a seal such as a seal is provided therebetween. The seal between the dielectric member 24 and the bottom wall of the cavity 22 will be described in detail below in conjunction with FIGS. 2 and 5.

如第2圖和第5圖所示，在介電質件設置孔26的沉孔261的下表面沿其周向開設有環形凹槽，其內設置有環形密封圈17，該環形凹槽和環形密封圈17沿介電質件24的周向延伸形成環繞該介電質件24的軸線的閉合環形結構。這樣，在介電質件24安裝在介電質件設置孔26內的情況下，借助諧振腔22內的氣壓和介電質件24的自重，第一柱體241的下表面能夠將環形密封圈17擠壓變形，封堵住第一柱體241與沉孔261之間的縫隙，從而使諧振腔22的內部與真空腔室19的內部相隔絕。As shown in FIGS. 2 and 5, an annular groove is formed in the circumferential direction of the lower surface of the counterbore 261 of the dielectric member providing hole 26, and an annular seal ring 17 is provided therein, the annular groove and The annular seal 17 extends circumferentially of the dielectric member 24 to form a closed annular structure around the axis of the dielectric member 24. Thus, in the case where the dielectric member 24 is mounted in the dielectric member-providing hole 26, the lower surface of the first cylinder 241 can be annularly sealed by the air pressure in the cavity 22 and the self-weight of the dielectric member 24. The ring 17 is pressed and deformed to seal the gap between the first cylinder 241 and the counterbore 261, thereby isolating the interior of the cavity 22 from the interior of the vacuum chamber 19.

需要說明的是，在實際應用中，對應於每一介電質件，在該介電質件與諧振腔的底壁之間設置有密封件，該密封件沿介電質件的周向延伸形成環繞該介電質件軸線的閉合環形結構，並且沿該密封件的周向，該介電質件和諧振腔始終與該密封件相接觸，從而實現介電質件與諧振腔底壁之間的密封。具體地，對於每一介電質件而言，可以在諧振腔的底壁上沿該介電質件的周向開設密封圈安置槽，環形密封圈置於其中，從而沿該介電質件的周向將該介電質件套於其內，以此封堵介電質件與諧振腔底壁之間的縫隙；或者，可以在介電質件上沿其周向開設密封圈安置槽，環形密封圈置於其中，從而沿該介電質件的周向將該介電質件套於其內，以此封堵介電質件與諧振腔底壁之間的縫隙；或者，也可以同時在諧振腔的底壁上沿該介電質件的周向開設密封圈安置槽，以及在介電質件上沿其周向開設密封圈安置槽，在各密封圈安置槽中均放置密封圈，從而沿該介電質件的周向而將該介電質件套於其內，以此封堵介電質件與諧振腔底壁之間的縫隙。當然，也可以不開設密封圈安置槽，而是將密封圈直接放置在介電質件與諧振腔底壁二者的接觸面上，借助於介電質件與諧振腔底壁之間的接觸與擠壓而實現密封圈的定位和密封，例如，環形密封圈套置在介電質件上，且該介電質件放置於諧振腔的底壁的介電質件設置孔內，則同樣可以實現密封圈的定位和密封；再如，將環形密封圈放置在第5圖所示的沉孔261的上表面，在介電質件安置於該介電質件設置孔內的情況下，通過介電質件和沉孔261的上表面與該環形密封圈的接觸與擠壓而實現密封圈的定位和密封。It should be noted that, in practical applications, a sealing member is disposed between the dielectric member and the bottom wall of the resonant cavity corresponding to each dielectric member, and the sealing member extends along the circumferential direction of the dielectric member. Forming a closed annular structure surrounding the axis of the dielectric member, and along the circumferential direction of the sealing member, the dielectric member and the resonant cavity are always in contact with the sealing member, thereby realizing the dielectric member and the bottom wall of the resonant cavity The seal between the two. Specifically, for each dielectric member, a sealing ring seating groove may be formed on a bottom wall of the resonant cavity along a circumferential direction of the dielectric member, and an annular sealing ring is disposed therein, thereby along the dielectric member The dielectric member is sleeved in the circumferential direction to block a gap between the dielectric member and the bottom wall of the resonant cavity; or a sealing ring can be formed along the circumferential direction of the dielectric member An annular sealing ring is disposed therein to sleeve the dielectric member in a circumferential direction of the dielectric member to block a gap between the dielectric member and the bottom wall of the resonant cavity; or A sealing ring seating groove may be opened on the bottom wall of the resonant cavity along the circumferential direction of the dielectric member, and a sealing ring seating groove may be formed along the circumferential direction of the dielectric member, and placed in each sealing ring seating groove. The sealing ring encloses the dielectric member in the circumferential direction of the dielectric member to block a gap between the dielectric member and the bottom wall of the cavity. Of course, instead of opening the sealing ring seating groove, the sealing ring can be placed directly on the contact surface between the dielectric member and the bottom wall of the resonant cavity, by means of the contact between the dielectric member and the bottom wall of the resonant cavity. Positioning and sealing the sealing ring with extrusion, for example, the annular sealing ring is sleeved on the dielectric material, and the dielectric material is placed in the dielectric material setting hole of the bottom wall of the resonant cavity, and the same can be Positioning and sealing the sealing ring; for example, placing the annular sealing ring on the upper surface of the counterbore 261 shown in FIG. 5, and passing through the dielectric member disposed in the hole of the dielectric member The upper surface of the dielectric member and counterbore 261 is in contact with and pressed against the annular seal to achieve positioning and sealing of the seal.

較佳地，為了能夠在較低的電壓下實現放電，形成氣體的初始電離，可以在諧振腔22內設置第二探針。下面結合第2圖和第3圖詳細說明諧振腔22內的第二探針27。Preferably, a second probe can be disposed within the resonant cavity 22 in order to enable discharge at a lower voltage to form an initial ionization of the gas. The second probe 27 in the cavity 22 will be described in detail below with reference to Figs. 2 and 3.

如第2圖和第3圖所示，在諧振腔22的內部還包括第二探針27，其為金屬材質，且數量和位置與介電質件24的數量和位置相對應，具體地，第二探針27和介電質件24的數量均為6個，每一第二探針27對應一介電質件24，且每一第二探針27在其所對應的介電質件24所在平面上的正投影與該介電質件24在該平面上的正投影同軸。並且，第二探針27設置在諧振腔22的頂壁上並沿諧振腔22的軸向向下延伸，也就是說，第二探針27沿諧振腔22的軸向而設置在諧振腔22的頂壁與介電質件24之間，且第二探針27的一端與諧振腔22的頂壁相連，另一端（下端）沿諧振腔22的軸向向下延伸，其延伸的程度可以直至與介電質件24的上表面相接觸（但不能擠壓介電質件24）。第二探針27不能擠壓介電質件24的原因在於：在激發電漿的過程中，介電質件24的溫度會升高，導致其體積膨脹，若第二探針27原本就擠壓介電質件24，則會使得體積膨脹後的介電質件24與第二探針27之間的壓力過大而致使介電質件24破碎。As shown in FIG. 2 and FIG. 3, a second probe 27 is also included in the interior of the resonant cavity 22, which is made of a metal material, and the number and position correspond to the number and position of the dielectric members 24, specifically, The number of the second probe 27 and the dielectric member 24 is six, each second probe 27 corresponds to a dielectric member 24, and each second probe 27 is in its corresponding dielectric member. The orthographic projection on the plane of the plane 24 is coaxial with the orthographic projection of the dielectric mass 24 on the plane. Also, the second probe 27 is disposed on the top wall of the resonant cavity 22 and extends downward in the axial direction of the resonant cavity 22, that is, the second probe 27 is disposed in the resonant cavity 22 along the axial direction of the resonant cavity 22. The top wall and the dielectric member 24 are connected, and one end of the second probe 27 is connected to the top wall of the resonant cavity 22, and the other end (lower end) extends downward along the axial direction of the resonant cavity 22, and the degree of extension thereof can be Until the upper surface of the dielectric member 24 is in contact (but the dielectric member 24 cannot be squeezed). The reason why the second probe 27 cannot squeeze the dielectric member 24 is that during the process of exciting the plasma, the temperature of the dielectric member 24 rises, causing its volume to expand, if the second probe 27 is originally squeezed. Pressing the dielectric member 24 causes the pressure between the volume-expanded dielectric member 24 and the second probe 27 to be too large to cause the dielectric member 24 to break.

由於諧振腔22的內部設置有第二探針27，因此在製程時會有電場垂直於金屬表面、磁場平行於金屬表面的邊界條件，這會改變諧振腔22內部的原有的場的分佈，並激發高次模，使得第二探針27附近的電場增強，從而更容易在低氣壓條件下（例如毫托（mTorr）量級的放電氣壓）實現對氣體的初始電離，因此本發明實施例提供的表面波電漿裝置能夠在低放電氣壓下良好地工作。Since the second probe 27 is disposed inside the cavity 22, there is a boundary condition that the electric field is perpendicular to the metal surface and the magnetic field is parallel to the metal surface during the process, which changes the original field distribution inside the cavity 22, and Exciting the higher order mode such that the electric field in the vicinity of the second probe 27 is enhanced, thereby making it easier to achieve initial ionization of the gas under low pressure conditions (e.g., discharge pressure on the order of milliTorr (mTorr)), thus providing embodiments of the present invention The surface wave plasma device is capable of working well at low discharge pressures.

進一步地，為了避免高功率下大氣擊穿，第二探針27在其所對應的介電質件24所在平面上的正投影的邊緣與該介電質件24在該平面上的正投影的邊緣之間的距離W不能過小，較佳的，W大於或等於2cm。Further, in order to avoid atmospheric breakdown at high power, the edge of the orthographic projection of the second probe 27 on the plane of its corresponding dielectric member 24 and the orthographic projection of the dielectric member 24 on the plane The distance W between the edges should not be too small, and preferably, W is greater than or equal to 2 cm.

需要說明的是，儘管本發明實施例中的第二探針27的數量和位置與介電質件24的數量和位置相對應，但是本發明不局限於此，在實際應用中，第二探針27的數量也可以與介電質件24不相對應；而且，第二探針27的設置位置也可以錯開介電質件24所在位置，例如，第二探針27可以設置在諧振腔22的頂壁上的與介電質件24之間的間隙正對的位置處，和/或也可以設置在諧振腔22的底壁上的介電質件24之間的間隙處。進一步地，當第二探針27設置為複數時，其具體的設置數量和位置還可綜合考慮到諧振腔22的尺寸、高度和形狀來確定。It should be noted that although the number and position of the second probes 27 in the embodiment of the present invention correspond to the number and position of the dielectric members 24, the present invention is not limited thereto, and in practical applications, the second probe The number of the needles 27 may also correspond to the dielectric member 24; moreover, the position of the second probe 27 may also be offset from the position of the dielectric member 24, for example, the second probe 27 may be disposed in the cavity 22 At the location on the top wall that faces the gap between the dielectric members 24, and/or may also be provided at the gap between the dielectric members 24 on the bottom wall of the resonant cavity 22. Further, when the second probes 27 are set to be plural, the specific number and position thereof can also be determined in consideration of the size, height and shape of the cavity 22.

由上可知，本發明實施例提供的表面波電漿裝置能夠產生大面積的電漿，因而能夠達到工業應用級；並且，在諧振腔內適當設置第二探針27的情況下，可以在極低氣壓下用較低功率實現初始電離，從而擴大了該表面波電漿裝置的製程區間。It can be seen from the above that the surface wave plasma device provided by the embodiment of the present invention can generate a large area of plasma, and thus can reach an industrial application level; and, in the case where the second probe 27 is appropriately disposed in the resonant cavity, the pole can be Initial ionization is achieved with lower power at low air pressure, thereby expanding the processing interval of the surface wave plasma device.

較佳地，第二探針27在諧振腔22內的延伸長度可調。所謂延伸長度，指的是第二探針27的下端與諧振腔22的頂壁之間的距離。至於具體調節方式，可以參見下述第二實施例中的調節方式。Preferably, the extension length of the second probe 27 within the resonant cavity 22 is adjustable. The extension length refers to the distance between the lower end of the second probe 27 and the top wall of the resonant cavity 22. As for the specific adjustment mode, reference may be made to the adjustment mode in the second embodiment described below.

本發明第二實施例中的表面波電漿裝置與前述第一實施例提供的表面波電漿裝置的差別在於諧振腔的結構，至於微波發生裝置、微波傳輸匹配結構、連接腔10和真空腔室19的結構及其作用，與前述結合第一實施例所描述的各相應結構及其作用相同，在此不再贅述。以下詳細說明本實施例中的諧振腔。The difference between the surface wave plasma device in the second embodiment of the present invention and the surface wave plasma device provided in the first embodiment is the structure of the resonant cavity, as for the microwave generating device, the microwave transmission matching structure, the connecting cavity 10 and the vacuum chamber. The structure of the chamber 19 and its functions are the same as those of the respective structures described above in connection with the first embodiment, and will not be described herein. The resonant cavity in this embodiment will be described in detail below.

請參閱第7圖，本實施例中，複數介電質視窗可以採用這樣的方式設置形成：在諧振腔22的底壁44上開設有複數介電質件設置孔441，在諧振腔22的底壁44和真空腔室19之間設置有呈板狀結構的介電質件（以下簡稱為介電質板）45，該介電質板45能夠覆蓋全部介電質件設置孔441，即，借助於該介電質板45，可以在每一介電質件設置孔441處形成介電質視窗。Referring to FIG. 7 , in the embodiment, the plurality of dielectric windows may be formed in such a manner that a plurality of dielectric member-providing holes 441 are formed in the bottom wall 44 of the resonant cavity 22 at the bottom of the resonant cavity 22 . A dielectric member (hereinafter referred to as a dielectric plate) 45 having a plate-like structure is disposed between the wall 44 and the vacuum chamber 19, and the dielectric plate 45 can cover all of the dielectric member setting holes 441, that is, By means of the dielectric plate 45, a dielectric window can be formed at each of the dielectric member setting holes 441.

具體地，本實施例中的諧振腔22設置在真空腔室19的頂部，其為空腔結構，採用諸如銅、鋁、不銹鋼或鋁合金等的金屬製作而成。該諧振腔22的頂壁設置有複數第二探針27，該第二探針27的沿諧振腔22的軸向延伸，其上端延伸在諧振腔22的頂壁的上方，其下端貫穿諧振腔22的頂壁而延伸至諧振腔22的內部，並且該第二探針27設置成可沿諧振腔22的軸向而相對於諧振腔22的底壁升降，即，第二探針27的下端與諧振腔22的底壁之間的間距可以調節、變化。該諧振腔22的底壁44上設置有沿其厚度方向貫穿該底壁44的複數介電質件設置孔441，複數介電質件設置孔441的數量和位置與複數第二探針27的數量和位置一一對應。該底壁44用作天線板，以下稱作天線板44。Specifically, the resonant cavity 22 in this embodiment is disposed on the top of the vacuum chamber 19, which is a cavity structure made of metal such as copper, aluminum, stainless steel or aluminum alloy. The top wall of the resonant cavity 22 is provided with a plurality of second probes 27 extending along the axial direction of the resonant cavity 22, the upper end of which extends above the top wall of the resonant cavity 22, and the lower end of which extends through the resonant cavity. The top wall of 22 extends to the inside of the resonant cavity 22, and the second probe 27 is disposed to be movable up and down relative to the bottom wall of the resonant cavity 22 along the axial direction of the resonant cavity 22, that is, the lower end of the second probe 27. The spacing between the bottom wall of the cavity 22 can be adjusted and varied. The bottom wall 44 of the cavity 22 is provided with a plurality of dielectric member-providing holes 441 penetrating the bottom wall 44 in the thickness direction thereof, the number and position of the plurality of dielectric member-providing holes 441 and the plurality of second probes 27 The number and location correspond one-to-one. This bottom wall 44 serves as an antenna board, hereinafter referred to as an antenna board 44.

在天線板44的下方設置有呈板狀結構的介電質件（以下簡稱為介電質板）45，用於將微波能量耦合進入真空腔室19內，以在真空腔室19內激發產生電漿。具體地，介電質板45設置在天線板44與真空腔室19之間，且與真空腔室19密封連接，即，介電質件45採用整體式結構，將天線板44與真空腔室19相互隔離，這樣不僅可以將微波能量耦合進入真空腔室19內，而且還可以使諧振腔22與真空腔室19之間的介面均為介電質材料，從而可以避免形成金屬污染。該介電質件45所採用的材料包括石英、陶瓷、表面塗覆有三氧化二釔的石英或者表面塗覆有三氧化二釔的陶瓷。較佳的，介電質件45的厚度的取值範圍在5~80mm。A dielectric member (hereinafter simply referred to as a dielectric plate) 45 having a plate-like structure is disposed under the antenna plate 44 for coupling microwave energy into the vacuum chamber 19 for excitation in the vacuum chamber 19. Plasma. Specifically, the dielectric plate 45 is disposed between the antenna plate 44 and the vacuum chamber 19, and is sealingly connected to the vacuum chamber 19, that is, the dielectric member 45 adopts a monolithic structure, and the antenna plate 44 and the vacuum chamber are used. 19 is isolated from each other so that not only the microwave energy can be coupled into the vacuum chamber 19, but also the interface between the cavity 22 and the vacuum chamber 19 is a dielectric material, thereby avoiding metal contamination. The material used for the dielectric member 45 includes quartz, ceramic, quartz coated with antimony trioxide or ceramic coated with antimony trioxide. Preferably, the thickness of the dielectric member 45 ranges from 5 to 80 mm.

在進行製程時，在諧振腔22內位於該第二探針27的附近形成高頻電磁場，該高頻電磁場的分佈會影響在真空腔室19內形成的電漿的密度分佈。通過調節各個第二探針27的下端與天線板44之間的豎直間距，可以對高頻電磁場的分佈進行調節，從而可以即時調節在真空腔室19內形成的電漿的密度分佈，進而可以滿足在不同的製程條件下對電漿分佈的不同要求。此外，借助上述諧振腔22和介電質視窗，可以在極低的氣壓條件下，使用較低的功率就能夠形成反應氣體的初始電離，從而擴大了製程區間。During the process, a high frequency electromagnetic field is formed in the cavity 22 near the second probe 27, and the distribution of the high frequency electromagnetic field affects the density distribution of the plasma formed in the vacuum chamber 19. By adjusting the vertical spacing between the lower end of each of the second probes 27 and the antenna plate 44, the distribution of the high-frequency electromagnetic field can be adjusted, so that the density distribution of the plasma formed in the vacuum chamber 19 can be instantly adjusted, and It can meet different requirements for plasma distribution under different process conditions. In addition, with the above-mentioned cavity 22 and dielectric window, the initial ionization of the reaction gas can be formed using a lower power under extremely low gas pressure conditions, thereby expanding the process range.

下面對第二探針27的排布方式進行詳細描述。The arrangement of the second probes 27 will be described in detail below.

對於第一種排布方式，請一併參閱第8A圖至第8E圖，在天線板44所在平面上，複數第二探針27的投影分佈在以天線板44所在平面的中心為圓心、且半徑不同的兩個同心圓周（內圈圓周和外圈圓周）上。如第8A圖所示，分佈在內圈圓周上的第二探針27N有6個，分別為43N1~43N6；分佈在外圈圓周上的第二探針27W有12個，分別為43W1~43W12。For the first arrangement, please refer to FIG. 8A to FIG. 8E. On the plane of the antenna board 44, the projections of the plurality of second probes 27 are distributed at the center of the plane of the antenna board 44, and Two concentric circles with different radii (inner ring circumference and outer ring circumference). As shown in Fig. 8A, there are six second probes 27N distributed on the circumference of the inner ring, respectively 43N1 to 43N6; and 12 second probes 27W distributed on the circumference of the outer ring, respectively 43W1 to 43W12.

第二探針27的下端與天線板44之間的豎直間距越大，則真空腔室19內與該第二探針27的位置相對應的區域形成的電漿的密度分佈越小；反之，第二探針27的下端與天線板44之間的豎直間距越小，則真空腔室19內與該第二探針27的位置相對應的區域形成的電漿的密度分佈越大。基於此，如第8B圖所示，分佈在內圈圓周上的6個第二探針27N的下端與天線板44之間的豎直間距H1相同，分佈在外圈圓周上的12個第二探針27W的下端與天線板44之間的豎直間距H2相同，且H1小於H2，例如，H1=10mm；H2=40mm。在這種情況下，由於H1小於H2，則分佈在支撐台21上方的電漿，其在與分佈在內圈圓周上的6個第二探針27N相對應的區域分佈的密度大於分佈在外圈圓周上的12個第二探針27W相對應的區域分佈的密度，如第8D圖所示，從而實現了電漿的密度分佈的調節。The greater the vertical spacing between the lower end of the second probe 27 and the antenna plate 44, the smaller the density distribution of the plasma formed in the region of the vacuum chamber 19 corresponding to the position of the second probe 27; The smaller the vertical spacing between the lower end of the second probe 27 and the antenna plate 44, the greater the density distribution of the plasma formed in the region of the vacuum chamber 19 corresponding to the position of the second probe 27. Based on this, as shown in FIG. 8B, the vertical spacing H1 between the lower ends of the six second probes 27N distributed on the circumference of the inner ring and the antenna plate 44 is the same, and 12 second probes distributed on the circumference of the outer ring. The vertical spacing H2 between the lower end of the needle 27W and the antenna plate 44 is the same, and H1 is smaller than H2, for example, H1 = 10 mm; H2 = 40 mm. In this case, since H1 is smaller than H2, the plasma distributed over the support table 21 has a density distributed more in the region corresponding to the six second probes 27N distributed on the circumference of the inner ring than in the outer ring. The density of the distribution of the regions corresponding to the twelve second probes 27W on the circumference is as shown in Fig. 8D, thereby realizing the adjustment of the density distribution of the plasma.

如第8C圖所示，分佈在內圈圓周上的6個第二探針27N的下端與天線板44之間的豎直間距H4相同，分佈在外圈圓周上的12個第二探針27W的下端與天線板44之間的豎直間距H3相同，且H3小於H4，例如，H3=10mm；H4=30mm。在這種情況下，由於H3小於H4，則分佈在支撐台21上方的電漿，其在與分佈在外圈圓周上的12個第二探針27W相對應的區域分佈的密度大於分佈在內圈圓周上的6個第二探針27N相對應的區域分佈的密度，如第8E圖所示，從而實現了電漿的密度分佈的調節。As shown in Fig. 8C, the vertical spacing H4 between the lower ends of the six second probes 27N distributed on the circumference of the inner ring and the antenna plate 44 is the same, and the twelve second probes 27W distributed on the circumference of the outer ring are The vertical spacing H3 between the lower end and the antenna plate 44 is the same, and H3 is smaller than H4, for example, H3 = 10 mm; H4 = 30 mm. In this case, since H3 is smaller than H4, the plasma distributed over the support table 21 has a density distributed more in the region corresponding to the 12 second probes 27W distributed on the circumference of the outer ring than in the inner ring. The density of the distribution of the regions corresponding to the six second probes 27N on the circumference is as shown in Fig. 8E, thereby realizing the adjustment of the density distribution of the plasma.

當然，在實際應用中，也可以根據具體情況將同一圓周上的第二探針的下端與天線板之間的豎直間距設定為不相同，以滿足在不同的製程條件下對電漿分佈的不同要求。Of course, in practical applications, the vertical spacing between the lower end of the second probe on the same circumference and the antenna plate may be set to be different according to specific conditions to meet the plasma distribution under different process conditions. Different requirements.

需要說明的是，在本實施例中，在天線板44所在平面上，複數第二探針27的投影分佈在以天線板44所在平面的中心為圓心、且半徑不同的兩個同心圓（內圈圓周和外圈圓周）上；但是，本發明並不局限於此，在實際應用中，同心圓的數量還可以為三個以上。It should be noted that, in this embodiment, on the plane of the antenna board 44, the projections of the plurality of second probes 27 are distributed in two concentric circles with the center of the plane of the antenna plate 44 as the center and different radii. The circumference of the circle and the circumference of the outer ring are); however, the present invention is not limited thereto, and in practical applications, the number of concentric circles may be three or more.

在實際應用中，可以採用升降機構對上述第二探針27的升降運動進行遠端自動調節，或者，也可以採用手動方式對上述第二探針27的升降運動進行調節。具體地，在遠端自動調節的方式中，諧振腔22還包括複數升降機構（圖中未示出），該升降機構的數量與圓周的數量相對應，各個升降機構用於一一對應地驅動各個圓周上的所有第二探針同步上升或同步下降，即，對應於本實施例的兩個同心圓的情況，升降機構為兩個，其中一用於同步驅動內圈圓周上的所有第二探針27N；其中另一用於同步驅動外圈圓周上的所有第二探針27W。或者，升降機構的數量還可以與第二探針的數量相對應，每個升降機構用於一一對應地驅動其中一第二探針上升或下降。也就是說，升降機構的數量為18個，每個升降機構用於單獨驅動相應的一第二探針上升或下降。在實際應用中，升降機構可以為升降電機、升降氣缸或者升降液壓缸等具有升降驅動功能的機構。In an actual application, the lifting movement of the second probe 27 can be automatically adjusted remotely by using a lifting mechanism, or the lifting movement of the second probe 27 can be adjusted manually. Specifically, in the remote automatic adjustment mode, the resonant cavity 22 further includes a plurality of lifting mechanisms (not shown), the number of the lifting mechanisms corresponding to the number of circumferences, and the respective lifting mechanisms are used for driving in one-to-one correspondence All of the second probes on each circumference rise synchronously or synchronously, that is, corresponding to the case of the two concentric circles of the embodiment, the lifting mechanism is two, one of which is used to synchronously drive all the second on the circumference of the inner ring The probe 27N; the other is for synchronously driving all of the second probes 27W on the circumference of the outer ring. Alternatively, the number of lifting mechanisms may correspond to the number of second probes, each lifting mechanism for driving one of the second probes to rise or fall in a one-to-one correspondence. That is to say, the number of lifting mechanisms is 18, and each lifting mechanism is used to individually drive a corresponding one of the second probes to rise or fall. In practical applications, the lifting mechanism may be a lifting and lowering motor, a lifting cylinder or a lifting hydraulic cylinder or the like having a lifting and lowering driving function.

在手動調節方式中，每個第二探針具有外螺紋，且在諧振腔22的頂壁腔壁421上設置有貫穿其厚度的螺紋孔，各個第二探針27通過其外螺紋一一對應地安裝在各個螺紋孔中。通過手動順時針或逆時針旋轉任意一第二探針27，來調節該第二探針的下端與天線板44之間的豎直間距。當然，在此基礎上，也可以採用自動調節的方式代替該手動調節的方式，即，採用諸如旋轉電機等的驅動機構自動驅動任意一第二探針27順時針或逆時針旋轉，從而實現對第二探針27的下端與天線板44之間的豎直間距的調節。In the manual adjustment mode, each of the second probes has an external thread, and a threaded hole penetrating the thickness thereof is disposed on the top wall wall 421 of the cavity 22, and each of the second probes 27 has a one-to-one correspondence through the external threads thereof. Grounded in each threaded hole. The vertical spacing between the lower end of the second probe and the antenna plate 44 is adjusted by manually rotating any of the second probes 27 clockwise or counterclockwise. Of course, on the basis of this, the automatic adjustment mode can also be adopted instead of the manual adjustment mode, that is, a driving mechanism such as a rotating electric machine is used to automatically drive any one of the second probes 27 to rotate clockwise or counterclockwise, thereby realizing Adjustment of the vertical spacing between the lower end of the second probe 27 and the antenna plate 44.

對於第二種排布方式，請一併參閱第9A圖至第9C圖，天線板44所在平面上，複數第二探針27的投影分佈在以天線板44所在平面的中心為圓心的一圓周上。如第9A圖所示，分佈在該圓周上的第二探針27D有5個，分別為43D1~43D5。For the second arrangement, please refer to FIG. 9A to FIG. 9C. On the plane of the antenna board 44, the projection of the plurality of second probes 27 is distributed on a circumference centered on the center of the plane of the antenna board 44. on. As shown in Fig. 9A, there are five second probes 27D distributed on the circumference, respectively 43D1 to 43D5.

如第9B圖所示，分佈在該圓周上的5個第二探針27D的下端與天線板44之間的豎直間距H5相同，例如，H5=20mm。As shown in Fig. 9B, the vertical pitch H5 between the lower ends of the five second probes 27D distributed on the circumference and the antenna plate 44 is the same, for example, H5 = 20 mm.

如第9C圖所示，分佈在該圓周上的5個第二探針27D的下端與天線板44之間的豎直間距H5不相同，其中一第二探針27D的下端與天線板44之間的豎直間距H7大於其餘第二探針27D的下端與天線板44之間的豎直間距H6，例如，H6=20mm；H7=40mm。在這種情況下，在支撐台21上方的電漿，其分佈在與豎直間距為H7的其中一第二探針27D相對應的區域分佈的密度小於分佈在與豎直間距為H6的其餘第二探針27D相對應的區域分佈的密度，從而實現了電漿的密度分佈的調節。As shown in FIG. 9C, the vertical spacing H5 between the lower ends of the five second probes 27D distributed on the circumference and the antenna board 44 is different, and the lower end of the second probe 27D and the antenna board 44 are The vertical spacing H7 is greater than the vertical spacing H6 between the lower ends of the remaining second probes 27D and the antenna panel 44, for example, H6 = 20 mm; H7 = 40 mm. In this case, the plasma distributed above the support table 21 is distributed in a region corresponding to one of the second probes 27D having a vertical interval H7, and the density is less than the distribution distributed at a vertical interval of H6. The density of the distribution of the regions corresponding to the second probes 27D, thereby achieving adjustment of the density distribution of the plasma.

在實際應用中，可以採用升降機構對上述第二探針27的升降運動進行遠端自動調節，或者，也可以採用手動方式對上述第二探針27的升降運動進行調節。該升降機構與上述第一種排布方式中的升降機構相類似，其區別僅在於，升降機構還可以為一，用以驅動所有的第二探針同步上升或下降。手動調節方式與上述第一種排布方式中的手動調節方式相同，在此不再贅述。In an actual application, the lifting movement of the second probe 27 can be automatically adjusted remotely by using a lifting mechanism, or the lifting movement of the second probe 27 can be adjusted manually. The lifting mechanism is similar to the lifting mechanism of the first type of arrangement described above, except that the lifting mechanism can also be used to drive all of the second probes to rise or fall simultaneously. The manual adjustment mode is the same as the manual adjustment mode in the above-mentioned first arrangement mode, and details are not described herein again.

較佳的，第二探針27的下端與天線板44之間的豎直間距不小於10mm，以避免在高功率的條件下發生大氣擊穿的情況。Preferably, the vertical spacing between the lower end of the second probe 27 and the antenna plate 44 is not less than 10 mm to avoid atmospheric breakdown under high power conditions.

進一步較佳的，諧振腔22在豎直方向上的長度的取值範圍在10~200mm，以給第二探針27的升降運動預留足夠的空間。Further preferably, the length of the resonant cavity 22 in the vertical direction ranges from 10 to 200 mm to reserve sufficient space for the lifting movement of the second probe 27.

在實際應用中，天線板44上的介電質件設置孔441可以為圓孔，該圓孔的直徑的取值範圍在20~120mm，較佳在40~120mm；或者，天線板44上的介電質件設置孔441還可以為正方形孔，該正方形孔的邊長的取值範圍在20~120mm，較佳在40~120mm。或者，天線板44上的介電質件設置孔還可以為其他任意形狀的通孔。In practical applications, the dielectric material setting hole 441 on the antenna board 44 may be a circular hole, and the diameter of the circular hole may range from 20 to 120 mm, preferably 40 to 120 mm; or the antenna plate 44 The dielectric material setting hole 441 may also be a square hole having a side length ranging from 20 to 120 mm, preferably 40 to 120 mm. Alternatively, the dielectric member setting holes on the antenna board 44 may be other through holes of any shape.

需要說明的是，在實際應用中，複數介電質視窗可以採用這樣的方式設置形成：在諧振腔的底壁上開設有複數介電質件設置孔，在諧振腔的底壁和真空腔室之間設置有介電質件，介電質件包括安裝板以及內嵌在該安裝板中的複數介電質塊，每個介電質塊均沿安裝板的厚度方向貫穿該安裝板，且複數介電質塊的數量和設置位置與複數介電質件設置孔的數量和位置一一對應，借助於每個介電質件可以在其所對應的介電質件設置孔處形成介電質視窗。其中，介電質塊包括被加工成固定形狀而能夠嵌置在介電質件設置孔中的獨立結構件，也包括可以填充在介電質件設置孔中的由前述介電質材料製成的顆粒、粉末或片材。It should be noted that, in practical applications, the plurality of dielectric windows may be formed in such a manner that a plurality of dielectric material setting holes are formed in the bottom wall of the resonant cavity, and the bottom wall of the resonant cavity and the vacuum chamber a dielectric member is disposed between the mounting plate and a plurality of dielectric blocks embedded in the mounting plate, each dielectric block penetrating the mounting plate along a thickness direction of the mounting plate, and The number and arrangement positions of the plurality of dielectric blocks correspond one-to-one with the number and position of the plurality of dielectric material setting holes, and each dielectric member can form a dielectric at a corresponding dielectric member setting hole thereof. Quality window. The dielectric block includes a separate structural member that is processed into a fixed shape and can be embedded in the dielectric member-providing hole, and includes a dielectric material that can be filled in the dielectric member-providing hole and is made of the dielectric material. Granules, powders or sheets.

下面結合第10圖詳細說明本發明第三實施例提供的表面波電漿裝置。Next, a surface wave plasma device according to a third embodiment of the present invention will be described in detail with reference to FIG.

本發明第三實施例中的表面波電漿裝置與前述第一實施例提供的表面波電漿裝置的差別在於：本實施例省去連接在矩形波導8和諧振腔22之間的連接腔，而是將諧振腔22的上表面直接疊置於矩形波導8的下表面，並使矩形波導8底壁所開設的微波出口與諧振腔22頂壁所開設的微波入口對準並在二者的連接處進行密封，而使矩形波導8和諧振腔22密閉連通。螺釘探針23自矩形波導8直接伸入諧振腔22內。至於本實施例中的表面波電漿裝置的其他結構及其作用，與前述結合第一實施例所描述的各相應結構及其作用相同，在此不再贅述。The difference between the surface wave plasma device in the third embodiment of the present invention and the surface wave plasma device provided in the first embodiment is that the present embodiment eliminates the connection cavity connected between the rectangular waveguide 8 and the resonant cavity 22, Rather, the upper surface of the resonant cavity 22 is directly stacked on the lower surface of the rectangular waveguide 8, and the microwave outlet opened by the bottom wall of the rectangular waveguide 8 is aligned with the microwave inlet opened by the top wall of the resonant cavity 22 and The joint is sealed, and the rectangular waveguide 8 and the resonant cavity 22 are hermetically connected. The screw probe 23 extends directly from the rectangular waveguide 8 into the cavity 22. The other structures of the surface wave plasma device and the functions thereof in the present embodiment are the same as those of the respective structures described above in connection with the first embodiment, and will not be described herein.

下面結合第11圖詳細說明本發明第四實施例提供的表面波電漿裝置。Next, a surface wave plasma device according to a fourth embodiment of the present invention will be described in detail with reference to FIG.

本發明第四實施例中的表面波電漿裝置與前述第一實施例中的表面波電漿裝置類似，二者差別在於：本實施例中，省去螺釘探針23和連接在矩形波導8和諧振腔22之間的連接腔，並且矩形波導8的微波出口不是設置在其中段區域而是在其終端，即，矩形波導8的終端具有微波出口，該微波出口與諧振腔的微波入口對準並在二者的連接處進行密封，而使矩形波導8和諧振腔22密閉連通。並且，矩形波導8的終端的軸線與其起始端的軸線之間存在大於0度但小於180度的傾角，從而使微波沿著矩形波導傳輸時能夠改變傳輸方向而到達其終端並進入到諧振腔22中。為此，可以省去用於改變微波傳輸方向的螺釘探針23。至於本實施例中的表面波電漿裝置的其他結構及其作用，與前述結合第一實施例所描述的各相應結構及其作用相同，在此不再贅述。The surface wave plasma device in the fourth embodiment of the present invention is similar to the surface wave plasma device in the foregoing first embodiment, and the difference is that in the present embodiment, the screw probe 23 is omitted and the rectangular waveguide 8 is connected. And a connection cavity between the cavity 22, and the microwave outlet of the rectangular waveguide 8 is not disposed in the middle portion thereof but at the end thereof, that is, the terminal of the rectangular waveguide 8 has a microwave outlet, and the microwave inlet of the microwave outlet and the resonant cavity The sealing is performed at the junction of the two, and the rectangular waveguide 8 and the resonant cavity 22 are hermetically connected. Moreover, there is an inclination angle greater than 0 degrees but less than 180 degrees between the axis of the terminal end of the rectangular waveguide 8 and the axis of the starting end thereof, so that the microwave can be changed along the rectangular waveguide to change its transmission direction to reach its terminal end and enter the cavity 22 in. For this reason, the screw probe 23 for changing the direction of microwave transmission can be omitted. The other structures of the surface wave plasma device and the functions thereof in the present embodiment are the same as those of the respective structures described above in connection with the first embodiment, and will not be described herein.

可以理解的是，以上實施方式僅僅是為了說明本發明的原理而採用的示例性實施方式，然而本發明並不局限於此。對於本領域內的普通技術人員而言，在不脫離本發明的精神和實質的情況下，可以做出各種變型和改進，這些變型和改進也視為本發明的保護範圍。It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

1‧‧‧微波源供電電源
2‧‧‧微波源
3‧‧‧諧振器
4‧‧‧環流器
5‧‧‧負載
6‧‧‧定向耦合器
7‧‧‧阻抗調節單元
8‧‧‧矩形波導
10‧‧‧連接腔
11‧‧‧天線主體
12‧‧‧滯波板
15‧‧‧縫隙板
16、45‧‧‧介電質板
17‧‧‧密封圈
18‧‧‧腔體
19‧‧‧真空腔室
20‧‧‧晶片
21‧‧‧支撐台
22‧‧‧諧振腔
23、27、43D、43D1~43D5、43N、43W‧‧‧探針
24‧‧‧介電質件
26‧‧‧介電質件設置孔
44‧‧‧底壁、天線板
241、242‧‧‧柱體
261‧‧‧沉孔
262‧‧‧過孔
421‧‧‧頂壁腔壁
441‧‧‧介電質件設置孔
H1、H2、H3、H4、H5、H6、H7‧‧‧豎直間距
W‧‧‧距離1‧‧‧Microwave source power supply
2‧‧‧Microwave source
3‧‧‧Resonator
4‧‧‧ Circulator
5‧‧‧load
6‧‧‧Directional coupler
7‧‧‧ Impedance adjustment unit
8‧‧‧Rectangular waveguide
10‧‧‧Connecting cavity
11‧‧‧Antenna body
12‧‧‧ lag plate
15‧‧‧ slot board
16, 45‧‧‧ dielectric plate
17‧‧‧ Sealing ring
18‧‧‧ cavity
19‧‧‧vacuum chamber
20‧‧‧ wafer
21‧‧‧Support table
22‧‧‧Resonator
23, 27, 43D, 43D1~43D5, 43N, 43W‧‧‧ probe
24‧‧‧Dielectric quality
26‧‧‧Dielectric material setting hole
44‧‧‧Bottom wall, antenna board
241, 242‧‧‧ cylinder
261‧‧‧ counterbore
262‧‧‧through holes
421‧‧‧Top wall
441‧‧‧Dielectric material setting hole
H1, H2, H3, H4, H5, H6, H7‧‧‧ vertical spacing
W‧‧‧ distance

第1a圖為現有的表面波電漿裝置的結構示意圖； 第1b圖為現有的表面波天線縫隙板的結構示意圖； 第2圖為本發明第一實施例提供的表面波電漿裝置的結構示意圖； 第3圖為諧振腔的底壁的俯視圖； 第4圖為沿第3圖中的A-A’對諧振腔的底壁進行剖切所得到的剖面圖； 第5圖為處於分離狀態下的介電質件和介電質件設置孔的剖視圖； 第6A圖為兩個柱體組合結構的介電質件的示意圖； 第6B圖為一種兩級錐台結構的介電質件的示意圖； 第6C圖為另一種兩級錐台結構的介電質件的示意圖； 第6D圖為一種柱體和錐台組合結構的介電質件的示意圖； 第6E圖為另一種柱體和錐台組合結構的介電質件的示意圖； 第6F圖為又一種柱體和錐台組合結構的介電質件的示意圖； 第6G圖為再一種柱體和錐台組合結構的介電質件的示意圖； 第7圖為本發明第二實施例提供的表面波電漿裝置的結構示意圖； 第8A圖為本發明第二實施例採用的第一種諧振機構的俯視剖面圖； 第8B圖為本發明第二實施例採用的第一種諧振機構採用第一種調節方式的主視剖面圖； 第8C圖為本發明第二實施例採用的第一種諧振機構採用第二種調節方式的主視剖面圖； 第8D圖為採用第一種調節方式獲得的電漿分佈圖； 第8E圖為採用第二種調節方式獲得的電漿分佈圖； 第9A圖為本發明第二實施例採用的第二種諧振機構的俯視剖面圖； 第9B圖為本發明第二實施例採用的第二種諧振機構採用第一種調節方式的主視剖面圖； 第9C圖為本發明第二實施例採用的第二種諧振機構採用第二種調節方式的主視剖面圖； 第10圖為本發明第三實施例提供的表面波電漿裝置的結構示意圖；以及 第11圖為本發明第四實施例提供的表面波電漿裝置的結構示意圖。1a is a schematic structural view of a conventional surface wave plasma device; FIG. 1b is a schematic structural view of a conventional surface wave antenna slot plate; FIG. 2 is a schematic structural view of a surface wave plasma device according to a first embodiment of the present invention; Figure 3 is a plan view of the bottom wall of the cavity; Figure 4 is a cross-sectional view of the bottom wall of the cavity along A-A' in Figure 3; Figure 5 is in a separated state. A cross-sectional view of a dielectric member and a dielectric member providing hole; FIG. 6A is a schematic view of a dielectric member of a two-column combined structure; and FIG. 6B is a schematic view of a dielectric member of a two-stage frustum structure Figure 6C is a schematic view of another dielectric material of a two-stage frustum structure; Figure 6D is a schematic view of a dielectric member of a combined structure of a cylinder and a frustum; and Figure 6E is a diagram of another cylinder and cone Schematic diagram of the dielectric material of the combined structure of the stage; FIG. 6F is a schematic view of another dielectric material of the combined structure of the column and the frustum; FIG. 6G is a dielectric material of the combined structure of the column and the frustum Figure 7 is a schematic diagram showing the surface wave power provided by the second embodiment of the present invention. FIG. 8A is a top cross-sectional view of a first resonant mechanism employed in a second embodiment of the present invention; FIG. 8B is a first embodiment of the first resonant mechanism employed in the second embodiment of the present invention. A front cross-sectional view of a mode; FIG. 8C is a front cross-sectional view of a first type of resonating mechanism employed in a second embodiment of the present invention; and FIG. 8D is a plasma obtained by the first mode of adjustment FIG. 8E is a plasma distribution diagram obtained by the second adjustment method; FIG. 9A is a top cross-sectional view of a second resonance mechanism used in the second embodiment of the present invention; FIG. 9B is a second embodiment of the present invention; The second resonant mechanism used in the embodiment adopts a first adjustment mode of the first embodiment; and FIG. 9C is a front cross-sectional view of the second resonant mechanism used in the second embodiment of the present invention. FIG. 10 is a schematic structural view of a surface wave plasma device according to a third embodiment of the present invention; and FIG. 11 is a schematic structural view of a surface wave plasma device according to a fourth embodiment of the present invention.

1‧‧‧微波源供電電源 1‧‧‧Microwave source power supply

2‧‧‧微波源 2‧‧‧Microwave source

3‧‧‧諧振器 3‧‧‧Resonator

4‧‧‧環流器 4‧‧‧ Circulator

5‧‧‧負載 5‧‧‧load

6‧‧‧定向耦合器 6‧‧‧Directional coupler

7‧‧‧阻抗調節單元 7‧‧‧ Impedance adjustment unit

8‧‧‧矩形波導 8‧‧‧Rectangular waveguide

10‧‧‧連接腔 10‧‧‧Connecting cavity

19‧‧‧真空腔室 19‧‧‧vacuum chamber

21‧‧‧支撐台 21‧‧‧Support table

22‧‧‧諧振腔 22‧‧‧Resonator

23、27‧‧‧探針 23, 27‧‧ ‧ probe

24‧‧‧介電質件 24‧‧‧Dielectric quality

W‧‧‧距離 W‧‧‧ distance

Claims (22)

一種表面波電漿裝置，包括依次連接的微波發生裝置、微波傳輸匹配結構和真空腔室，其中，該微波傳輸匹配結構包括矩形波導，用於傳輸該微波發生裝置產生的微波，其特徵在於，該裝置還包括諧振腔，其設置在該矩形波導和該真空腔室之間，並與該矩形波導密閉連通以及與該真空腔室密封連接，且該諧振腔的底壁設置有複數介電質視窗，該複數介電質視窗在該真空腔室的底面所在平面中的正投影落入該真空腔室的內壁在該平面的正投影所限定的範圍內，以分別將微波能量耦合進入該真空腔室；該矩形波導的中段區域與該諧振腔密閉連通，還包括第一探針，設置在該矩形波導的該中段區域，且該第一探針的一端延伸至該諧振腔內，用於將該矩形波導中的微波引入到該諧振腔內。 A surface wave plasma device comprising a microwave generating device sequentially connected, a microwave transmission matching structure and a vacuum chamber, wherein the microwave transmission matching structure comprises a rectangular waveguide for transmitting microwaves generated by the microwave generating device, wherein The device further includes a resonant cavity disposed between the rectangular waveguide and the vacuum chamber, and is in closed communication with the rectangular waveguide and sealingly connected to the vacuum chamber, and the bottom wall of the resonant cavity is provided with a plurality of dielectric materials a window, an orthographic projection of the plurality of dielectric windows in a plane of a bottom surface of the vacuum chamber falling within an inner wall of the vacuum chamber within a range defined by an orthographic projection of the plane to respectively couple microwave energy into the a vacuum chamber; the middle portion of the rectangular waveguide is in closed communication with the resonant cavity, and further includes a first probe disposed in the middle portion of the rectangular waveguide, and one end of the first probe extends into the resonant cavity, The microwaves in the rectangular waveguide are introduced into the resonant cavity. 如申請專利範圍第1項所述的表面波電漿裝置，其中，該複數介電質視窗沿該真空腔室的周向均勻分佈。 The surface wave plasma device of claim 1, wherein the plurality of dielectric windows are evenly distributed along a circumferential direction of the vacuum chamber. 如申請專利範圍第1項所述的表面波電漿裝置，其中，該複數介電質視窗採用這樣的方式設置而成：在該諧振腔的底壁上開設有複數介電質件設置孔，在每一所述介電質件設置孔中嵌置有形狀與之相匹配的介電質件。 The surface wave plasma device of claim 1, wherein the plurality of dielectric windows are disposed in such a manner that a plurality of dielectric material setting holes are formed in a bottom wall of the resonant cavity. A dielectric member having a shape matching thereto is embedded in each of the dielectric material setting holes. 如申請專利範圍第3項所述的表面波電漿裝置，其中，每一所述介電質件的形狀為下述形狀之一：柱體、錐台、複數柱體的組合、複數錐台的組合、柱體與錐台的組合。 The surface wave plasma device according to claim 3, wherein each of the dielectric members has a shape of one of the following shapes: a cylinder, a frustum, a combination of a plurality of cylinders, and a plurality of frustums. Combination, combination of cylinder and frustum. 如申請專利範圍第4項所述的表面波電漿裝置，其中，該介電質件的形狀為複數柱體的組合時，該複數柱體彼此同軸且逐級層疊設置，並且下一級柱體的直徑不大於上一級柱體的直徑；或者 該介電質件的形狀為複數錐台的組合時，該複數錐台彼此同軸且逐級層疊設置，並且下一級錐台的頂面的直徑不大於上一級錐台的底面的直徑；或者該介電質件的形狀為柱體與錐台的組合時，該柱體與錐台彼此同軸且逐級層疊設置，並且下一級柱體或者錐台的頂面的直徑不大於上一級柱體或者錐台的底面的直徑。 The surface wave plasma device according to claim 4, wherein, when the shape of the dielectric member is a combination of a plurality of cylinders, the plurality of cylinders are coaxial with each other and stacked one on another, and the lower stage cylinder The diameter of the cylinder is not greater than the diameter of the upper cylinder; or When the shape of the dielectric material is a combination of a plurality of frustums, the plurality of frustums are coaxially and stacked one on another, and the diameter of the top surface of the lower frustum is not greater than the diameter of the bottom surface of the upper frustum; or When the shape of the dielectric member is a combination of a cylinder and a frustum, the cylinder and the frustum are coaxially and stepwise stacked, and the diameter of the top surface of the lower cylinder or the frustum is not larger than the upper cylinder or The diameter of the bottom surface of the frustum. 如申請專利範圍第1項所述的表面波電漿裝置，其中，該複數介電質視窗採用這樣的方式設置而成：在該諧振腔的底壁上開設有複數介電質件設置孔，在該諧振腔的底壁和該真空腔室之間設置有介電質件，該介電質件被設置成板狀結構且能夠覆蓋該複數介電質件設置孔；或者在該諧振腔的底壁上開設有複數介電質件設置孔，在該諧振腔的底壁和該真空腔室之間設置有介電質件，該介電質件包括安裝板以及內嵌在該安裝板中的複數介電質塊，每個該介電質塊均沿該安裝板的厚度方向貫穿該安裝板，且該複數介電質塊的數量和設置位置與該複數介電質件設置孔的數量和位置一一對應。 The surface wave plasma device of claim 1, wherein the plurality of dielectric windows are disposed in such a manner that a plurality of dielectric material setting holes are formed in a bottom wall of the resonant cavity. a dielectric member is disposed between the bottom wall of the resonant cavity and the vacuum chamber, the dielectric member being disposed in a plate-like structure and capable of covering the plurality of dielectric member setting holes; or in the resonant cavity a plurality of dielectric material setting holes are defined in the bottom wall, and a dielectric member is disposed between the bottom wall of the resonant cavity and the vacuum chamber, the dielectric member includes a mounting plate and is embedded in the mounting plate a plurality of dielectric blocks, each of the dielectric blocks extending through the mounting plate along a thickness direction of the mounting plate, and the number and arrangement positions of the plurality of dielectric blocks and the number of holes of the plurality of dielectric members One-to-one correspondence with the location. 如申請專利範圍第3項或第6項所述的表面波電漿裝置，其中，該介電質件的厚度的取值範圍在5~80mm。 The surface wave plasma device according to claim 3, wherein the thickness of the dielectric material ranges from 5 to 80 mm. 如申請專利範圍第3項或第6項所述的表面波電漿裝置，其中，該介電質件最小直徑的取值範圍為40mm-120mm。 The surface wave plasma device of claim 3, wherein the dielectric material has a minimum diameter ranging from 40 mm to 120 mm. 如申請專利範圍第1項所述的表面波電漿裝置，其中，該第一探針的另一端沿著背離該諧振腔的方向延伸至該矩形波導的外部。 The surface wave plasma device of claim 1, wherein the other end of the first probe extends to the outside of the rectangular waveguide in a direction away from the resonant cavity. 如申請專利範圍第1項所述的表面波電漿裝置，其中，該第一探針採用螺接或卡接或銷接的方式進行固定。 The surface wave plasma device according to claim 1, wherein the first probe is fixed by screwing or snapping or pinning. 如申請專利範圍第1項至第6項及第9項至第10項中的任一項所述的表面波電漿裝置，其中，還包括連接腔，其設置在該矩形波導的微波出口和該諧振腔的微波入口之間，並與二者密封連接，該第一探針的一端貫穿該連接腔並延伸至該諧振腔內。 The surface wave plasma device according to any one of claims 1 to 5, wherein the method further includes a connection chamber provided at a microwave outlet of the rectangular waveguide and The microwave inlets of the cavity are sealed between the two, and one end of the first probe extends through the connection cavity and extends into the cavity. 如申請專利範圍第1項所述的表面波電漿裝置，其中，還包括短路活塞，其設置在該矩形波導的後段區域，並能沿該矩形波導的軸線與之做相對運動，以調節該矩形波導有效通路的長度。 The surface wave plasma device of claim 1, further comprising a short-circuiting piston disposed in a rear region of the rectangular waveguide and capable of moving relative thereto along an axis of the rectangular waveguide to adjust the The length of the effective path of the rectangular waveguide. 如申請專利範圍第3項所述的表面波電漿裝置，其中，還包括沿諧振腔的軸向延伸的第二探針，其上端固定在該諧振腔的頂壁上或者貫穿該諧振腔的頂壁而延伸至該諧振腔的上方，其下端位於該諧振腔的內部。 The surface wave plasma device of claim 3, further comprising a second probe extending along an axial direction of the resonant cavity, the upper end of which is fixed on the top wall of the resonant cavity or penetrates the resonant cavity The top wall extends above the resonant cavity and the lower end is located inside the resonant cavity. 如申請專利範圍第13項所述的表面波電漿裝置，其中，該第二探針被設置成能沿該諧振腔的軸向相對於該諧振腔的底壁升降。 The surface wave plasma device of claim 13, wherein the second probe is disposed to be movable up and down relative to a bottom wall of the resonant cavity along an axial direction of the resonant cavity. 如申請專利範圍第14項所述的表面波電漿裝置，其中，該第二探針的設置位置與該介電質視窗相對應。 The surface wave plasma device of claim 14, wherein the second probe is disposed at a position corresponding to the dielectric window. 如申請專利範圍第13項所述的表面波電漿裝置，其中，該第二探針的數量和位置與該介電質視窗的數量和位置相對應，且該第二探針在與其相對應的該介電質件上的正投影與該介電質件同軸。 The surface wave plasma device of claim 13, wherein the number and position of the second probe correspond to the number and position of the dielectric window, and the second probe corresponds thereto The orthographic projection on the dielectric member is coaxial with the dielectric member. 如申請專利範圍第13項所述的表面波電漿裝置，其中，該第二探針在與其相對應的介電質件上的正投影的邊緣與該介電質件的邊緣之間的距離不小於2cm。 The surface wave plasma device of claim 13, wherein the second probe has a distance between an edge of the orthographic projection on the corresponding dielectric member and an edge of the dielectric member. Not less than 2cm. 如申請專利範圍第13項所述的表面波電漿裝置，其中，在該第二探針為複數的情況下，複數該第二探針在該真空腔室的底面的投影分佈在以該真空腔室的底面的中心為圓心且半徑不同的複數同心圓的圓周上；或者 在該第二探針為複數的情況下，複數該第二探針在該真空腔室的底面的投影分佈在以該真空腔室的底面的中心為圓心的一圓周上。 The surface wave plasma device according to claim 13, wherein, in the case where the second probe is plural, a projection of the plurality of second probes on a bottom surface of the vacuum chamber is distributed in the vacuum The center of the bottom surface of the chamber is on the circumference of a plurality of concentric circles having a center and a different radius; or In the case where the second probe is plural, the projection of the plurality of second probes on the bottom surface of the vacuum chamber is distributed on a circumference centered on the center of the bottom surface of the vacuum chamber. 如申請專利範圍第18項所述的表面波電漿裝置，其中，該諧振腔還包括升降機構，該升降機構的數量與該圓周的數量相對應，每個該升降機構用於對應地驅動位於同一圓周上的所有第二探針同步上升或同步下降；或者該升降機構的數量與該第二探針的數量相對應，每個該升降機構對應於一所述第二探針且用以驅動該第二探針上升或下降。 The surface wave plasma device of claim 18, wherein the resonant cavity further comprises a lifting mechanism, the number of the lifting mechanism corresponding to the number of the circumferences, each of the lifting mechanisms being configured to be correspondingly driven All the second probes on the same circumference rise synchronously or synchronously; or the number of the lifting mechanisms corresponds to the number of the second probes, and each of the lifting mechanisms corresponds to one of the second probes and is driven The second probe rises or falls. 如申請專利範圍第18項所述的表面波電漿裝置，其中，至少在每個該第二探針的上部區域設置有外螺紋，在該諧振腔的頂壁上的設置該第二探針的位置處開設與該外螺紋相配合的螺紋孔，該螺紋孔為通孔或盲孔，該第二探針一一對應地安裝在該螺紋孔中，通過順時針或逆時針旋轉該第二探針，實現該第二探針相對於該諧振腔的底壁的升降。 The surface wave plasma device of claim 18, wherein at least an upper portion of each of the second probes is provided with an external thread, and the second probe is disposed on a top wall of the resonant cavity a threaded hole is formed at the position of the external thread, the threaded hole is a through hole or a blind hole, and the second probe is installed in the threaded hole in one-to-one correspondence, and the second is rotated by clockwise or counterclockwise The probe realizes the lifting of the second probe relative to the bottom wall of the resonant cavity. 如申請專利範圍第19項或第20項所述的表面波電漿裝置，其中，該第二探針的下端與該諧振腔的底壁之間的豎直間距不小於10mm。 The surface wave plasma device according to claim 19, wherein the vertical distance between the lower end of the second probe and the bottom wall of the resonant cavity is not less than 10 mm. 如申請專利範圍第1項所述的表面波電漿裝置，其中，該諧振腔的高度為10mm~200mm。 The surface wave plasma device according to claim 1, wherein the resonant cavity has a height of 10 mm to 200 mm.
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TW363203B (en) * 1996-09-02 1999-07-01 Hitachi Ltd Surface waving plasma operation apparatus
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US20060090704A1 (en) * 2004-10-29 2006-05-04 Tetsuya Ide Plasma processing apparatus
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TW363203B (en) * 1996-09-02 1999-07-01 Hitachi Ltd Surface waving plasma operation apparatus
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