CN107723802A - A kind of caustic solution of indium phosphide single crystal wafer - Google Patents
A kind of caustic solution of indium phosphide single crystal wafer Download PDFInfo
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- CN107723802A CN107723802A CN201711104614.4A CN201711104614A CN107723802A CN 107723802 A CN107723802 A CN 107723802A CN 201711104614 A CN201711104614 A CN 201711104614A CN 107723802 A CN107723802 A CN 107723802A
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- Prior art keywords
- single crystal
- indium phosphide
- crystal wafer
- phosphide single
- caustic solution
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of caustic solution of indium phosphide single crystal wafer to comprise the following steps：Indium phosphide single crystal wafer is put into the concentrated sulfuric acid by S1 to be corroded；S2 deionized water rinsing indium phosphide single crystal wafers；Indium phosphide single crystal wafer is put into watery hydrochloric acid by S3 to be corroded；S4 repeating said steps S2；Indium phosphide single crystal wafer is put into chloroazotic acid by S5 to be corroded；S6 repeating said steps S2；S7 dries.The present invention carries out corrosion treatment using sour corrosion mode to the indium phosphide single crystal wafer after cutting, grinding, and effectively removes the damaging layer and stressor layers of single wafer surface, and can obtain the single wafer surface of cleaning, meets following process requirement.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular it relates to a kind of caustic solution of indium phosphide single crystal wafer.
Background technology
Indium phosphide single crystal wafer is important compound semiconductor materials, has and dodges cutting edge of a knife or a sword ore deposit structure.It has the drift of the electronics limit
Move the features such as speed is high, radiation resistance is good, thermal conductivity is high, breakdown electric field is high.Therefore, indium phosphide single crystal material is in microwave, milli
It is preferred backing material in the preparation of metric wave circuit and high-speed digital integrated circuit.In recent years, country has put into suitable money
Gold, the development for indium phosphide single crystal wafer backing material.Chemical attack is a very important step in indium phosphide single crystal wafer processing,
Its main function is cut, the process such as grinds caused by indium phosphide single crystal wafer surface being removed before being chemically-mechanicapolish polished
Mechanical damage, to ensure that every geometric parameter of final indium phosphide single crystal substrate meets the requirements.
Crystal bar can produce stress and stria, front wafer surface later stage to chip cutting process in inner wafer will pass through chemical machine
Tool is polished, therefore is handled mainly for the back side of chip early stage, and grinding is just had to pass through in the case that stria is obvious
Remove, then carry out again chemical attack remove the back side stressor layers and damaging layer, be later stage chip geometric parameter (such as angularity,
Flexibility etc.) satisfactory guarantee.Chinese invention patent CN 102796526 discloses a kind of indium phosphide monocrystal wafer
Corrosive liquid and caustic solution, corrosive liquid composition include the concentrated sulfuric acid, hydrogen peroxide, deionized water, prepared by a certain percentage, by phosphorus
Change indium single-chip, which is put into corrosive liquid, to carry out corroding 2-6 minutes, further takes out to be put into deionized water and cleans.The deficiency of such a method
Part is：First, corrosive liquid takes a long time to be cooled down with postponing needs, and efficiency is low；Secondly, indium phosphide single crystal wafer surface
Removal amount very little, thus cut for removal, the process such as grind caused by deeper surface mechanical damage and stressor layers removal amount
Not enough, the using effect in substrate later stage is influenceed.
The content of the invention
In view of the foregoing, it is an object to a kind of caustic solution of indium phosphide single crystal wafer is provided, can efficiently, just
Remove promptly and the process such as cut, grind in mechanical damage and stressor layers caused by indium phosphide single crystal wafer surface, and obtain clean
Plane of crystal.
To achieve these goals, the caustic solution of indium phosphide single crystal wafer of the present invention, comprises the following steps：
Indium phosphide single crystal wafer is put into the concentrated sulfuric acid by S1 to be corroded；
S2 deionized water rinsing indium phosphide single crystal wafers；
Indium phosphide single crystal wafer is put into watery hydrochloric acid by S3 to be corroded；
S4 repeating said steps S2；
Indium phosphide single crystal wafer is put into chloroazotic acid by S5 to be corroded；
S6 repeating said steps S2；
S7 dries.
Preferably, concentrated sulfuric acid concentration described in step S1 is not less than 96%, and temperature is 23~27 DEG C.
Further, it is preferable to ground, etching time of the indium phosphide single crystal wafer in the concentrated sulfuric acid is 30~90 seconds.
Preferably, watery hydrochloric acid concentration described in step S3 is 5%, and temperature is 23~27 DEG C.
Further, it is preferable to ground, etching time of the indium phosphide single crystal wafer in the watery hydrochloric acid is 10~30 seconds.
Preferably, chloroazotic acid concentration described in step S5 is 50%, and temperature is 23~27 DEG C.
Further, it is preferable to ground, etching time of the indium phosphide single crystal wafer in the chloroazotic acid is 20~60 seconds.
Preferably, deionized water resistivity described in step S2 is not less than 15,000,000, and temperature is 23~27 DEG C.
Further, it is preferable to ground, the washing time with the deionized water rinsing indium phosphide single crystal wafer is 30~40 seconds.
In addition to step S8 preferably, after step s 7,：Detect the erosion removal amount of the indium phosphide single crystal wafer and clean
Cleanliness two, in the case of at least one is underproof in described two, repeat the above steps S1-S7.
Compared with prior art, the present invention has advantages below and beneficial effect：
The present invention carries out corrosion treatment by acidic chemical forms of corrosion to the indium phosphide single crystal wafer after cutting, grinding, and selects respectively
The concentrated sulfuric acid, watery hydrochloric acid and chloroazotic acid is taken every time after corrosion, to be put into deionized water and rinse, effectively remove as corrosive liquid
Cut, grind etc. in process in mechanical damage layer and stressor layers caused by indium phosphide single crystal wafer surface, washing away indium phosphide single crystal
The corrosive liquid on piece surface, single wafer surface is cleaned, meets the requirement of following process.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the caustic solution of indium phosphide single crystal wafer of the present invention.
Embodiment
Embodiment of the present invention described below with reference to the accompanying drawings.One of ordinary skill in the art may recognize that
Arrive, without departing from the spirit and scope of the present invention, can be with a variety of modes or its combination to described
Embodiment is modified.Therefore, accompanying drawing and description are inherently illustrative, rather than for limiting the protection of claim
Scope.In addition, in this manual, accompanying drawing is drawn not in scale, and identical reference represents identical part.
The present embodiment is described in detail with reference to Fig. 1.
Fig. 1 is the schematic flow sheet of the caustic solution of indium phosphide single crystal wafer of the present invention, as shown in figure 1, the phosphatization
The caustic solution of indium single-chip comprises the following steps：
Indium phosphide single crystal wafer is put into the concentrated sulfuric acid by S1 to be corroded；
S2 deionized water rinsing indium phosphide single crystal wafers；
Indium phosphide single crystal wafer is put into watery hydrochloric acid by S3 to be corroded；
S4 repeating said steps S2；
Indium phosphide single crystal wafer is put into chloroazotic acid by S5 to be corroded；
S6 repeating said steps S2；
S7 dries.
The present invention carries out corrosion treatment by acidic chemical forms of corrosion to the indium phosphide single crystal wafer after cutting, grinding, and chooses dense
Sulfuric acid, watery hydrochloric acid and chloroazotic acid corrode to indium phosphide single crystal wafer respectively as corrosive liquid successively, and every time after corrosion,
It is put into deionized water and rinses, effectively remove the damaging layer and stressor layers of single wafer surface, and washes away the corruption of single wafer surface
Liquid is lost, clean surface, meets the requirement to single-chip following process.
Preferably, in step S1, the concentration of the concentrated sulfuric acid is not less than 96%, and temperature is 23~27 DEG C, it is further preferred that temperature is 25
℃.Preferably, etching time of the indium phosphide single crystal wafer in the above-mentioned concentrated sulfuric acid is 30~90 seconds.Preferably, by indium phosphide single crystal
Piece is positioned on fixture, and indium phosphide single crystal wafer is put into the concentrated sulfuric acid using fixture.
After indium phosphide single crystal wafer is taken out from the concentrated sulfuric acid, rapidly with deionized water rinsing, to wash away indium phosphide single crystal
The concentrated sulfuric acid corrosive liquid on piece surface, it is preferable that in step S2, the resistivity of the deionized water of selection is not less than 15,000,000, and temperature is
23~27 DEG C, it is highly preferred that temperature is 25 DEG C.Preferably, with the washing time of above-mentioned deionized water rinsing indium phosphide single crystal wafer
It is 30~40 seconds.
Preferably, in step S3, watery hydrochloric acid concentration is 5% or so, and temperature is 23~27 DEG C, it is highly preferred that temperature is 25
℃.Preferably, etching time of the indium phosphide single crystal wafer in above-mentioned watery hydrochloric acid is 10~30 seconds.
After indium phosphide single crystal wafer is taken out from watery hydrochloric acid, rapidly with deionized water rinsing, to wash away indium phosphide single crystal
The watery hydrochloric acid corrosive liquid on piece surface, it is preferable that the resistivity of the deionized water of selection is not less than 15,000,000, and temperature is 23~27 DEG C,
It is highly preferred that temperature is 25 DEG C.Preferably, it is 30~40 with the washing time of above-mentioned deionized water rinsing indium phosphide single crystal wafer
Second.
Preferably, in step S5, chloroazotic acid concentration is 50%, i.e. the volume ratio of chloroazotic acid and pure water is 1:1, temperature is 25 DEG C.
Preferably, etching time of the indium phosphide single crystal wafer in above-mentioned chloroazotic acid is 20~60 seconds.
After indium phosphide single crystal wafer is taken out from chloroazotic acid, rapidly with deionized water rinsing, to wash away indium phosphide single crystal wafer
The chloroazotic acid corrosive liquid on surface, it is preferable that the resistivity of the deionized water of selection is not less than 15,000,000, and temperature is 23~27 DEG C, more excellent
Selection of land, temperature are 25 DEG C.Preferably, with above-mentioned deionized water rinsing indium phosphide single crystal wafer it is 30~40 seconds.
After indium phosphide single crystal wafer is taken out from deionized water, dry so that indium phosphide single crystal wafer surface is without washmarking etc.
Dirt, in case subsequent technique uses.
Preferably, after drying, in addition to detecting step S8, the erosion removal amount and cleanliness factor of indium phosphide single crystal wafer are detected
Two, in the case of at least one is underproof in two, repeat the above steps S1-S7.Preferably, erosion removal amount is detected
For standard to be as qualified between 6~10 microns (um), it is range estimation monocrystalline surface without washmarking, clean to detect the standard of cleanliness factor
.If two qualified, remain standby.
Embodiment:
Illustrate the present embodiment in terms of corrosion process and testing result two.
First, corrosion process：Indium phosphide single crystal wafer to be processed is placed on fixture, is put into concentration not less than 96%, temperature
Spend in the concentrated sulfuric acid for 25 DEG C and corrode 90 seconds.Then, it is rapid to take out, be not less than 15,000,000 with resistivity, temperature be 25 DEG C go from
Sub- water rinses indium phosphide single crystal wafer 30 seconds.Then, it is 5% indium phosphide single crystal wafer to be placed into concentration, and temperature is 25 DEG C of dilute salt
Corrode 20 seconds in acid.Then it is rapid again to take out, it is not less than 15,000,000 with resistivity, temperature is 25 DEG C of deionized water rinsing indium phosphide
Single-chip 30 seconds.Then, it is 50% indium phosphide single crystal wafer to be put into concentration, and temperature is to corrode 30 seconds in 25 DEG C of dilute chloroazotic acid.So
It is rapid again afterwards to take out, it is not less than 15,000,000 with resistivity, the deionized water rinsing indium phosphide single crystal wafer that temperature is 25 DEG C 30 seconds, takes out
After dry, in case being used in subsequent technique.
Secondly, indium phosphide single crystal wafer erosion removal amount and cleanliness factor are detected.Through measuring, the indium phosphide single crystal in the present embodiment
For piece after above-mentioned acidic chemical corrosion process, the thickness of indium phosphide single crystal wafer reduces to 398um by the 405um of before processing, i.e., rotten
Erosion removal amount is 7um, is met the requirements, and effectively removes and is produced in cutting, the process such as grind on indium phosphide single crystal wafer surface
Mechanical damage layer and stressor layers, and indium phosphide single crystal wafer surface range estimation without dirts such as washmarkings, any surface finish is clean, after satisfaction
Continuous processing request.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for those skilled in the art
For member, the present invention can have various modifications and variations.Any modification within the spirit and principles of the invention, being made,
Equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (10)
1. a kind of caustic solution of indium phosphide single crystal wafer, it is characterised in that comprise the following steps：
Indium phosphide single crystal wafer is put into the concentrated sulfuric acid by S1 to be corroded；
S2 deionized water rinsing indium phosphide single crystal wafers；
Indium phosphide single crystal wafer is put into watery hydrochloric acid by S3 to be corroded；
S4 repeating said steps S2；
Indium phosphide single crystal wafer is put into chloroazotic acid by S5 to be corroded；
S6 repeating said steps S2；
S7 dries.
2. the caustic solution of indium phosphide single crystal wafer according to claim 1, it is characterised in that the concentrated sulfuric acid described in step S1
Concentration is not less than 96%, and temperature is 23~27 DEG C.
3. the caustic solution of indium phosphide single crystal wafer according to claim 2, it is characterised in that indium phosphide single crystal wafer is described
Etching time in the concentrated sulfuric acid is 30~90 seconds.
4. the caustic solution of indium phosphide single crystal wafer according to claim 1, it is characterised in that watery hydrochloric acid described in step S3
Concentration is 5%, and temperature is 23~27 DEG C.
5. the caustic solution of indium phosphide single crystal wafer according to claim 4, it is characterised in that indium phosphide single crystal wafer is described
Etching time in watery hydrochloric acid is 10~30 seconds.
6. the caustic solution of indium phosphide single crystal wafer according to claim 1, it is characterised in that chloroazotic acid is dense described in step S5
Spend for 50%, temperature is 23~27 DEG C.
7. the caustic solution of indium phosphide single crystal wafer according to claim 6, it is characterised in that indium phosphide single crystal wafer is described
Etching time in chloroazotic acid is 20~60 seconds.
8. the caustic solution of indium phosphide single crystal wafer according to claim 1, it is characterised in that deionization described in step S2
Water resistance rate is not less than 15,000,000, and temperature is 23~27 DEG C.
9. the caustic solution of indium phosphide single crystal wafer according to claim 8, it is characterised in that with the deionized water rinsing
The washing time of indium phosphide single crystal wafer is 30~40 seconds.
10. the caustic solution of indium phosphide single crystal wafer according to claim 1, it is characterised in that after step s 7, also wrap
Include step S8：The erosion removal amount and cleanliness factor two of the indium phosphide single crystal wafer are detected, at least one of in described two no
In the case of qualified, repeat the above steps S1-S7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711104614.4A CN107723802A (en) | 2017-11-10 | 2017-11-10 | A kind of caustic solution of indium phosphide single crystal wafer |
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| CN201711104614.4A CN107723802A (en) | 2017-11-10 | 2017-11-10 | A kind of caustic solution of indium phosphide single crystal wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112082992A (en) * | 2020-07-22 | 2020-12-15 | 威科赛乐微电子股份有限公司 | Dislocation determination method for indium phosphide wafer |
| CN112251818A (en) * | 2020-09-29 | 2021-01-22 | 威科赛乐微电子股份有限公司 | Wafer etching solution and etching method |
| CN113707535A (en) * | 2021-07-09 | 2021-11-26 | 威科赛乐微电子股份有限公司 | Method for etching indium phosphide wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4861423A (en) * | 1987-04-01 | 1989-08-29 | Societe Anonyme Dite: Alcatel Cit | Method of etching a surface of an indium phosphide part |
| CN1499587A (en) * | 2002-11-11 | 2004-05-26 | 中国科学院半导体研究所 | Method for preparing half insulated substrate by using non-adulterated indium phosphide through high temperature annealing |
| CN102789964A (en) * | 2011-05-16 | 2012-11-21 | 北京通美晶体技术有限公司 | III-V group compound semiconductor wafer and cleaning method thereof |
| CN102796526A (en) * | 2012-08-02 | 2012-11-28 | 中国电子科技集团公司第四十六研究所 | Etching solution and etching method for etching indium phosphide monocrystal wafer |
| CN103952769A (en) * | 2014-05-12 | 2014-07-30 | 中国电子科技集团公司第四十六研究所 | Method of improving warping degree of indium phosphide single crystal cutting sheet |
-
2017
- 2017-11-10 CN CN201711104614.4A patent/CN107723802A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4861423A (en) * | 1987-04-01 | 1989-08-29 | Societe Anonyme Dite: Alcatel Cit | Method of etching a surface of an indium phosphide part |
| CN1499587A (en) * | 2002-11-11 | 2004-05-26 | 中国科学院半导体研究所 | Method for preparing half insulated substrate by using non-adulterated indium phosphide through high temperature annealing |
| CN102789964A (en) * | 2011-05-16 | 2012-11-21 | 北京通美晶体技术有限公司 | III-V group compound semiconductor wafer and cleaning method thereof |
| CN102796526A (en) * | 2012-08-02 | 2012-11-28 | 中国电子科技集团公司第四十六研究所 | Etching solution and etching method for etching indium phosphide monocrystal wafer |
| CN103952769A (en) * | 2014-05-12 | 2014-07-30 | 中国电子科技集团公司第四十六研究所 | Method of improving warping degree of indium phosphide single crystal cutting sheet |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112082992A (en) * | 2020-07-22 | 2020-12-15 | 威科赛乐微电子股份有限公司 | Dislocation determination method for indium phosphide wafer |
| CN112251818A (en) * | 2020-09-29 | 2021-01-22 | 威科赛乐微电子股份有限公司 | Wafer etching solution and etching method |
| CN113707535A (en) * | 2021-07-09 | 2021-11-26 | 威科赛乐微电子股份有限公司 | Method for etching indium phosphide wafer |
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