CN107708919B - 合金化银线 - Google Patents
合金化银线 Download PDFInfo
- Publication number
- CN107708919B CN107708919B CN201680032776.9A CN201680032776A CN107708919B CN 107708919 B CN107708919 B CN 107708919B CN 201680032776 A CN201680032776 A CN 201680032776A CN 107708919 B CN107708919 B CN 107708919B
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- Prior art keywords
- wire
- range
- core
- alloyed silver
- silver wire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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- B23K35/0261—Rods, electrodes, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
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- Conductive Materials (AREA)
Abstract
一种包括线芯或由线芯组成的合金化银线,所述线芯本身由以下组成:(a)钯,其量在3到6wt.‑%范围内,(b)金,其量在0.2到2wt.‑%范围内,(c)镍,其量在20到700wt.‑ppm范围内,(d)铂,其量在20到500wt.‑ppm范围内,(e)银,其量在91.88到96.786wt.‑%范围内,和(f)0到100wt.‑ppm的其它组分,其中所有以wt.‑%和wt.‑ppm为单位的量是基于所述芯的总重量,其中所述合金化银线具有在8到80μm范围内的平均直径。
Description
本发明涉及一种8到80μm厚的合金化银线,其包括以特定重量比包括银、钯、金、镍和铂的线芯。本发明进一步涉及用于制造这类线的方法。
接线在电子和微电子应用中的用途为众所周知的现有技术水平。尽管一开始接线是由金制得,但如今使用较便宜的材料,如铜、铜合金、银和银合金。
关于线几何结构,最常见的为圆形横截面的接线和具有近乎矩形横截面的接合带。两种类型的线几何结构皆具有使其适用于特定应用的其优势。
本发明的一目标为提供适合用于线接合应用的合金化银线,合金化银线尤其在抗腐蚀性和抗湿性方面得到改善,且还呈现与线接合应用相关的总体上非常均衡的特性范围,其包含(例如)宽针脚式接合窗、形成具有良好再现性的轴对称无空气焊球(FAB)、低FAB硬度、高针脚式接合拉伸强度、软线、低电阻率、低电迁移等。
所述物品解决方案的贡献是由形成类别的技术方案的主题提供。形成类别的技术方案的从属性附属项表示本发明的优选实施例,其主题也对解决上文提和的目标作出贡献。
在第一方面中,本发明涉及一种合金化银线,其包括电线芯或由电线芯组成(下文中也称简称为“芯”),电线芯本身由以下组成:
(a)钯,其量在3到6wt.-%(重量%)范围内,优选在4到5wt.-%范围内,
(b)金,其量在0.2到2wt.-%范围内,优选在0.5到1.5wt.-%范围内,
(c)镍,其量在20到700wt.-ppm(百万分的重量、按重量计百万分的一)范围内,优选在275到325wt.-ppm范围内,
(d)铂,其量在20到500wt.-ppm范围内,优选在75到125wt.-ppm范围内,
(e)银,其量在91.88到96.786wt.-%范围内,优选在93.455到95.3875wt.-%范围内,和
(f)0到100wt.-ppm的其它组分(钯、金、镍、铂和银以外的组分),
其中所有以wt.-%和wt.-ppm为单位的量是基于芯的总重量,
其中合金化银线具有在8到80μm范围内、或甚至在12到55μm范围内的平均直径。
合金化银线优选为用于微电子中的接合的接线。合金化银线优选为单件式物品。众多形状为已知的且显得适用于本发明的合金化银线。优选形状为(在横截面图中)圆形、椭圆形和矩形形状。
可通过“量尺寸方法”获得线或线芯的平均直径或(简单地说)直径。根据这种方法测定限定长度的合金化银线的物理重量。基于这个重量,使用线材料密度计算线或线芯直径。直径计算为特定线的五个切口上的五个测量值的算术平均值。
对于本发明,术语“接线”包括所有横截面形状和所有常见线直径,但具有圆形横截面和薄直径的接线为优选的。
与前述一致,线芯以前文揭示的成比例的比率包括(a)钯、(b)金、(c)镍、(d)铂和(e)银。
然而,本发明的合金化银线的芯可以0到100wt.-ppm的总量包括(f)其它组分。在本上下文中,常也称为“不可避免的杂质”的其它组分为来源于存在于所用原材料中的杂质或来源于线制造方法的少量化学元素和/或化合物,即(f)型其它组分的存在可(例如)来源于存在于银、钯、金、镍和铂中的一或多个中的杂质。这类其它组分的实例为:Cu、Fe、Si、Mn、Cr、Ce、Mg、La、Al、B、Zr、Ti、S等。其它组分(f)的0到100wt.-ppm的低总量确保线特性的良好再现性。通常不分开添加存在于芯中的其它组分(f)。
在一实施例中,本发明的合金化银线的芯包括小于以下量的其它组分(f):
(i)Cu,其量<30wt.-ppm;
(ii)Cr、Ce、Mg、La、Al、Be、In、Mn、Ti中的任一个,其量各<2wt.-ppm;
(iii)Si、Fe、S中的任一个,其量各<15wt.-ppm。
本上下文中的合金化银线的芯定义为块状材料的均质区域。因为任何块状材料始终具有可在一定程度上呈现不同特性的表面区域,所以线芯的特性理解为块状材料均质区域的特性。块状材料区域的表面就形态、组成(例如硫、氯和/或氧气含量)和其它特征而言可为不同的。表面可为线芯的外表面;在这个实施例中,本发明的合金化银线由线芯组成。在一替代方案中,表面可为线芯和叠加于线芯上的涂层之间的界面区域。
在本发明的上下文中,术语“叠加”用于描述例如线芯的第一物品相对于例如涂层的第二物品的相对位置。“叠加”特征在于如中间层的其它物品可(但不需要)配置于第一和第二物品之间。
优选地,各相对于第一物品的总表面,第二物品至少部分地叠加于第一物品上,例如达至少30%、50%、70%或达至少90%。最优选地,第二物品完全叠加于第一物品上。
在本发明的上下文中,术语“中间层”是指在合金化银线的芯和叠加于其上的涂层之间的合金化银线的区域。在这个区域中,存在芯和涂层两个的材料的组合。
在本发明的上下文中,术语“厚度”用于定义层在垂直于芯的纵向轴线的方向上的尺寸,所述层至少部分地叠加于芯的表面上。
在一实施例中,芯具有表面,其中将涂层叠加于芯的表面上。
在一实施例中,各相对于芯的总质量,涂层的质量不超过5wt.-%,优选不超过2wt.-%或更低。当存在涂层时,各相对于芯的总质量,其常具有0.1wt.-%或更高、或0.5wt.-%或更高的最小质量。将少量材料涂覆为涂层保持由线芯材料定义的特征。另一方面,涂层赋予线表面以特定特征,如相对于环境的惰性、抗腐蚀性、改善的粘结性等。举例来说,对于直径为18μm的线,涂层的厚度在20到120nm范围内。对于具有25μm的直径的线,涂层可具有(例如)在30到150nm范围内的厚度。
在一实施例中,涂层可由贵金属元素制成。涂层可为所述元素的一的单层。在另一实施例中,涂层可为多层,其由多个叠加相邻子层组成,其中各子层由不同贵金属元素制成。用于沉积这类贵金属元素于芯上的常用技术为如电镀和无电极电镀的镀覆、如溅镀、离子电镀、真空蒸发和物理气相沉积的材料自气相的沉积、和材料自熔融物的沉积。
在一实施例中,本发明的合金化银线或其芯至少特征在于以下固有特性中的一个(参见如下所述的“测试方法A”):
(1)平均线粒度(平均粒度)小于10μm,例如在2到6μm范围内,优选在2到4μm范围内,
(2)线晶粒[100]或[101]或[111]定向平面小于10%,例如在1%到8%范围内,优选在2%到7%范围内,
(3)线孪晶间界分数不超过60%,例如在30%到60%范围内,优选在45%到50%范围内,
(4)FAB呈现两种晶粒结构类型的组合:等轴晶粒(晶粒几乎绕非均匀间界呈圆形)和柱状晶粒(晶粒伸长),
(5)FAB平均粒度≤8μm,例如在3到6μm范围内,优选在4到5μm范围内,
(6)FAB晶粒[101]定向平面小于25%,例如在8%到22%范围内,优选在16%到20%范围内,
(7)FAB孪晶间界分数小于70%,例如在30%到65%范围内,优选在55%到60%范围内,
和/或至少特征在于以下非固有特性中的一个:
(α)抗腐蚀性具有不超过2%接合球上升的值,例如在0到2%范围内(参见如下所述的“测试方法B”),
(β)抗湿性具有不超过2%接合球上升的值,例如在0到2%范围内(参见如下所述的“测试方法C”),
(γ)线芯的硬度不超过90HV,例如在50到90HV范围内,优选在70到80HV范围内(参见如下所述的“测试方法D”),
(δ)用于针脚式接合的工艺窗区域具有至少12000mA·g的值,例如对于直径为18μm的线,值为13000到14400mA·g(参见如下所述的具体揭示内容和“测试方法E”),
(ε)线的电阻率小于4.5μΩ·cm,例如在3到4.2μΩ·cm范围内,优选在3.8到4.0μΩ·cm范围内(参见如下所述的“测试方法F”),
(ζ)线的屈服强度不超过180MPa,例如在140到180MPa范围内(参见如下所述的“测试方法G”),
(η)线的银树突状生长不超过4μm/s,例如在2到4μm/s范围内,优选在2到3μm/s范围内(参见如下所述的“测试方法H”)。
本文所用的术语“固有特性”和“非固有特性”涉及线芯或FAB。固有特性意指线芯或FAB本身具有的特性(独立于其它因素),而非固有特性是视线芯或FAB与其它因素(如所用的测量方法和/或测量条件)的关系而定。
在本发明的一优选实施例的情况下,线芯的硬度(即接合之前的硬度)小于90HV,优选在70到80HV范围内。此外,在接合之前使用本发明的线所处理的FAB的硬度小于80HV,优选在60到70HV范围内。线芯和FAB的这个硬度或(更精确来说)柔软度有助于在接合过程中防止损害敏感性衬底。实验也已显示本发明的这类软线呈现极软FAB特性。如果机械敏感性结构排列于接合垫的下,那么FAB硬度的这个限制为尤其有用的。如果接合垫由如铝或金的软材料组成,那么这尤为正确。举例来说,敏感性结构可包括(例如)一个或若干个多孔二氧化硅层,其尤其具有小于2.5的介电常数。因为多孔且因此薄弱材料可有助于提升装置效能,所以所述材料变得愈加常用。
因此,可优化本发明的接线的机械特性以避免这类薄弱层的开裂或其它损害。
在一特定实施例中,本发明的合金化银线呈现银树突状生长,其速率小于4μm/s,例如在2到小于4μm/s范围内,优选在2到3μm/s范围内,其为4N纯银线的约25μm/s生长速率的约1/10到1/7。
在另一有利实施例中,线的电阻率小于4.5μΩ·cm,例如在3到4.2μΩ·cm范围内,优选在3.8到4.0μΩ·cm范围内,即意指适用于许多应用。
在另一方面中,本发明还涉及用于制造上文揭示的其实施例中任一个的合金化银线的方法。方法至少包括以下步骤:
(1)提供前驱体物品,其由以下组成:
(a)钯,其量在3到6wt.-%范围内,优选在4到5wt.-%范围内,
(b)金,其量在0.2到2wt.-%范围内,优选在0.5到1.5wt.-%范围内,
(c)镍,其量在20到700wt.-ppm范围内,优选在275到325wt.-ppm范围内,
(d)铂,其量在20到500wt.-ppm范围内,优选在75到125wt.-ppm范围内,
(e)银,其量在91.88到96.786wt.-%范围内,优选在93.455到95.3875wt.-%范围内,和
(f)0到100wt.-ppm的其它组分,
其中所有以wt.-%和wt.-ppm为单位的量是基于前驱体物品的总重量,
(2)伸长前驱体物品以形成线前驱体,直到获得线芯的所要最终直径;和
(3)最终,在完成方法步骤(2)后,在400到600℃范围内的烘箱设定温度下,对所获得的线前驱体进行带材退火达0.4到0.8秒范围内的暴露时间以形成合金化银线,
其中步骤(2)包含在400到800℃的烘箱设定温度下,对伸长前驱体物品进行中度分批退火达50到150分钟范围内的暴露时间的一或多个子步骤,和/或在400到800℃的烘箱设定温度下,对伸长前驱体物品进行中度带材退火达0.4秒到1.2秒范围内的暴露时间的一或多个子步骤。
在本文中使用术语“带材退火”。其为允许快速生产具有高再现性的线的连续工艺。带材退火意指动态地进行退火,这时伸长线前驱体物品或待退火的线前驱体移动穿过退火烘箱且在已离开退火烘箱后缠绕于卷轴上。
在本文中使用术语“烘箱设定温度”。其意指退火烘箱的温度控制器中所固定的温度。退火烘箱可为室炉型烘箱(在分批退火的情况下)或管状退火烘箱(在带材退火的情况下)。
本发明区分前驱体物品、线前驱体和合金化银线。术语“前驱体物品”用于那些线前阶段,其尚未达到线芯的所要最终直径,而术语“线前驱体”用于具有所要最终直径的线前阶段。在完成方法步骤(3)后,即在对具有所要最终直径的线前驱体进行最终带材退火后,获得本发明意义上的合金化银线。
可通过以所要量的钯、金、镍和铂掺合/掺杂银来获得如方法步骤(1)中所提供的前驱体物品。银合金本身可通过金属合金领域的技术人员已知的常规方法来制备,例如通过以所要比率将银、钯、金、镍和铂熔融在一起。在这种情况下,有可能使用一或多种常规母合金。可例如使用感应炉进行熔融过程,且有利的是在真空下或在惰性气体氛围下操作。所用材料可具有例如99.99wt.-%和更高的纯度级。可冷却如此产生的熔融物以形成基于银的前驱体物品的均质件。通常,这种前驱体物品呈棒状物形式,其具有(例如)2到25mm的直径和(例如)5到100m的长度。可通过将所述银合金熔融物浇铸于室温的合适模具中,随后冷却和固化来制造这种棒状物。
如果如本发明的第一方面的一些实施例所揭示,呈单层或多层形式的涂层存在于合金化银线的芯上,那么优选将这个涂层涂覆到线前驱体物品上,所述物品可尚未伸长,未最终伸长或甚至充分伸长到所要最终直径。技术人员知道如何计算前驱体物品上的这个涂层的厚度,以获得具有线的实施例所揭示的厚度的涂层,即在伸长具有涂层的前驱体物品以形成线前驱体之后。如上文已揭示,根据实施例用于在银合金表面上形成材料的涂层的众多技术为已知的。优选技术为如电镀和无电极电镀的镀覆、如溅镀、离子电镀、真空蒸发和物理气相沉积的材料自气相的沉积、和材料自熔融物的沉积。
为了将呈单层或多层的金属涂层叠加到本发明的第一方面的一些实施例揭示的线芯上,有利的是一旦达到前驱体物品的所要直径,即中断方法步骤(2)。这直径可在(例如)80到200μm范围内。随后可(例如)通过一或多种电镀方法步骤来涂覆单层或多层金属涂层。其后持续方法步骤(2)直到获得线芯的所要最终直径。
在方法步骤(2)中,伸长前驱体物品以形成线前驱体,直到获得线芯的所要最终直径。在本发明的上下文中,伸长前驱体物品以形成线前驱体的技术为已知的且显得实用。优选技术为辊轧、型锻、模拉伸或类似技术,其中模拉伸尤佳。在后一情况中,在若干方法步骤中拉伸前驱体物品直到达到线芯的所要和最终直径。
线芯的所要和最终直径可在8到80μm范围内,或优选在12到55μm范围内。所属领域的技术人员熟知这种线模拉伸方法。可使用常规碳化钨和金刚石拉伸模,且可使用常规拉伸润滑剂以支持拉伸。
本发明的方法的步骤(2)包含在400到800℃的烘箱设定温度下,对伸长前驱体物品进行中度分批退火达50到150分钟范围内的暴露时间的一或多个子步骤,和/或在400到800℃的烘箱设定温度下,对伸长前驱体物品进行中度带材退火达0.4秒到1.2秒范围内的暴露时间的一或多个子步骤。可在两个或多于两个多伸长或拉伸步骤之间进行一或多个伸长前驱体物品的中度退火步骤。为了通过实例说明这个步骤,在拉伸期间可在三个不同阶段进行三个中度退火步骤,例如,第一中度分批退火:在400到800℃的烘箱设定温度范围内,将棒状物拉伸到2mm的直径且缠绕于卷筒上达50到150分钟的暴露时间,第二中度带材退火:在400到800℃的烘箱设定温度范围内,将前驱体物品拉伸到47μm的直径达0.4到1.2秒的暴露时间,和第三中度带材退火:在400到800℃的烘箱设定温度范围内,进一步将前驱体物品拉伸到27μm的直径达0.4到1.2秒的暴露时间。
在方法步骤(3)中,最终对完成方法步骤(2)后所获得的伸长线前驱体进行带材退火。在(例如)400到600℃烘箱设定温度范围内进行最终带材退火达0.4到0.8秒的暴露时间,或在一优选实施例中,在400到500℃范围内达0.5到0.7秒。
通常通过以指定退火速度将伸长线前驱体拉伸穿过常规退火烘箱来进行最终带材退火,所述退火烘箱通常呈具有指定长度和限定温度分布的圆柱管形式,所述速度可在例如10到60米/分钟范围内选择。这样做可限定和设定退火时间/烘箱温度参数。
在一优选实施例中,在水中淬灭最终带材退火的合金化银线,在一实施例中,水可含有一或多种添加剂,例如0.01到0.07体积%的添加剂。在水中淬灭意指(例如)通过浸渍或滴注,立即或快速(即在0.2到0.6秒内)将最终带材退火的合金化银线从其在方法步骤(3)中经历的温度冷却到室温。
关于本发明的一实施例,发现在低于最大伸长率的温度的温度下进行最终带材退火可引起有益线特性,这是因为可以积极方式影响线形态。通过这种调整,可以积极方式影响如(例如)线硬度、球接合性能等的其它特性。
在一实施例中,可在比通过退火获得最大伸长率值的温度至少低150℃、例如低200到220℃的温度下进行最终带材退火;这可导致退火后线的伸长率值不超过最大伸长率值的70%,例如最大伸长率值的20%到60%。举例来说,可在比最大伸长率的温度TΔL(max)至少低150℃、优选至少低180℃、或至少低200℃的温度下进行方法步骤(3)。
方法步骤(3)的温度通常比TΔL(max)低不超过250℃。通过测试样品(线)在不同温度下的断裂伸长率来测定最大伸长率的温度TΔL(max)。在曲线图中收集数据点,其显示随温度(℃)变化的伸长率(以%计)。所得曲线图常称为“退火曲线”。在基于银的线的情况下,当伸长率(以%计)达到最大时观测温度。这为最大伸长率的温度TΔL(max)。一实例显示于图1中,其显示样品2的18μm合金化银线的例示性退火曲线(表1)。退火温度为x轴的可变参数。曲线图显示线的断裂负载(BL,以克计)和伸长率(EL,以%计)的测量值。通过拉伸测试来测定伸长率。伸长率测量值呈现在所显示的实例中约20%的典型局部最大值,其在约700℃的退火温度下获得。如果不在这个最大伸长率的温度下,而是在比最大伸长率的温度低210℃的490℃下对样品2的线进行最终带材退火,那么结果为约8%的伸长率值,其比最大伸长率值低超过40%。
可在惰性或还原氛围中进行方法步骤(2)的中度退火以及方法步骤(3)的最终带材退火。众多类型的惰性氛围以及还原氛围为此项技术中已知的且用于吹洗退火烘箱。在已知惰性氛围中,氮或氩为优选的。在已知还原氛围中,氢为优选的。另一优选还原氛围为氢和氮的混合物。优选氢和氮的混合物为90到98vol.-%的氮和相应地2到10vol.-%的氢,其中总vol.-%为100vol.-%。优选氮/氢的混合物等于93/7、95/5和97/3vol.-%/vol.-%,其各基于混合物的总体积。如果合金化银线表面的某些部分对由空气的氧所致的氧化反应具有敏感性,那么尤佳在退火中施加还原氛围。用所述类型的惰性或还原气体吹洗优选在处于10到125min-1范围内、更佳处于15到90min-1范围内、最佳处于20到50min-1范围内的气体交换速率(=气体流动速率[升/分钟]:烘箱内体积[升])下进行。
据信前驱体物品材料的组成(其与成品合金化银线芯的那个相同)和在方法步骤(2)和(3)期间的主要退火参数的独特组合对获得呈现至少一种上文揭示的固有和/或非固有的特性的本发明的线而言为重要的。中度和最终带材退火步骤的温度/时间条件允许获得或调整合金化银线芯的固有和非固有的特性。
完成方法步骤(3)后,完成本发明的合金化银线。为了充分受益于其特性,有利的是或立即(即毫不耽搁)将其用于线接合应用,例如在完成方法步骤(3)后不超过10天内。或者,为了保持合金化银线的宽线接合工艺窗特性且为了防止其氧化或受到其它化学侵蚀,通常在完成方法步骤(3)之后立即(即毫不耽搁)将成品线缠绕和真空密封,例如在完成方法步骤(3)后<1到5小时内,且随后存储以供进一步用作接线。存储于真空密封条件下不应超出6个月。在打开真空密封件后,应在不超过10天内将合金化银线用于线接合。
优选的是,在无尘室条件(US FED STD 209E无尘室标准,1k标准)下进行所有方法步骤(1)到(3)以及缠绕和真空密封。
本发明的第三方面为通过前文揭示的本发明的第二方面的方法或其一实施例,合金化银线为可获得的。已发现所述合金化银线较适合用作线接合应用中的接线。线接合技术为技术人员所熟知。在线接合过程中,典型的是形成球接合(第1接合)和针脚式接合(第2接合,楔形接合)。在形成接合期间施加某一力(通常以克计),通过施加超声波能(通常以毫安计)来支持所述力。线接合方法中的施加力上限和下限的差和施加超声波能上限和下限的差的数学乘积定义线接合工艺窗:
(施加力上限-施加力下限)·(施加超声波能上限-施加超声波能下限)=线接合工艺窗。
线接合工艺窗定义力/超声波能组合的区域,所述区域允许形成符合规格的线接合,即所述线接合通过如(仅举几个为例)常规拉伸测试、球剪切测试和球拉伸测试的常规测试。
换句话说,第1接合(球接合)工艺窗区域为用于接合中的力上限和下限的差与施加超声波能上限和下限的差的乘积,其中所得接合必须符合某些球剪切测试规格,例如0.0085克/平方微米的球剪切、粘附于接合衬垫上等,而第2接合(针脚式接合)工艺窗区域为用于接合中的力上限和下限的差与施加超声波能上限和下限的差的乘积,其中所得接合必须符合某些拉伸测试规格,例如2.5克的拉力,粘附于铅上等。
对于工业应用,出于线接合方法鲁棒性的原因,期望具有宽线接合工艺窗(力(以g计)比超声波能(以mA计))。本发明的线呈现极宽线接合工艺窗。
以下非限制性实例说明本发明。这些实例用于本发明的例示性阐明,且无论如何并不意欲限制本发明的范围或申请专利范围。
实例
制备FAB:
根据描述于《无空气球的KNS工艺用户指南(KNS Process User Guide for FreeAir Ball)》(库力索法工业有限公司(Kulicke&Soffa Industries Inc),华盛顿堡,宾夕法尼亚洲,美国,2002年,2009年5月31日)中的程序进行操作。通过进行常规电火炬(EFO)焙烧,通过标准焙烧(单步骤,18mA的EFO电流,420μs的EFO时间)来制备FAB。
测试方法A.到J.
在T=20℃和相对湿度RH=50%下进行所有测试和测量。
A.线和FAB的电子背散射衍射(EBSD)图分析:
测量线和FAB结构所用的主要步骤为样品制备,从而获得良好菊池(Kikuchi)图和组分计算值:
首先使用环氧树脂罐封有或无FAB的线,且按照标准金相技术进行抛光。在最终样品制备步骤中应用离子研磨以移除线表面的任何机械变形、污染和氧化层。用金溅镀离子研磨的横截面样品表面。随后进行两个另外回合的离子研磨和金溅镀。不进行化学蚀刻或离子蚀刻。
将样品加载到具有与正常FESEM(场发射扫描电子显微镜)样品固持器表面成70°角的固持器的FESEM中。FESEM另外配备有EBSD检测器。获得含有线结晶信息的电子背散射图案(EBSP)。
进一步分析这些图案的晶粒定向分数、平均粒度等(使用称作QUANTAX EBSD程序的软件,其由布鲁克(Bruker)研发)。类似定向的点分组在一起以形成结构组分。为了区分不同结构组分,使用15°的最大公差角度。将线拉伸方向设定为参考定向。通过测量具有平行于参考定向的[100]、[101]和[111]定向平面的晶体的百分比来计算[100]、[101]和[111]结构百分比。
分析界定大于最小值(本文为10°)的相邻晶格点之间的结晶定向的平均粒度,以确定晶界位置。EBSD软件计算各晶粒的面积且将其转化为等效圆直径,等效圆直径定义为“平均晶粒尺寸”。计算沿长度在~100μm内的线的纵向方向的所有晶粒,以确定平均晶粒尺寸的平均值和标准偏差。
平均粒度计算中不包含孪晶间界(也称作Σ3CSL孪晶间界)。孪晶间界是由围绕相邻结晶晶畴之间的<111>定向平面的60°旋转描述。点的数量取决于步长,其小于平均晶粒尺寸的1/5。
B.接合球的盐溶液浸泡测试:
将线球接合到Al-0.5wt.-%Cu接合垫。在25℃下将具有如此接合的线的测试装置浸泡于盐溶液中达10分钟,用去离子(DI)水洗涤,且随后用丙酮洗涤。盐溶液包括20wt.-ppm NaCl于去离子水中。在低倍显微镜(尼康(Nikon)MM-40)下以100×放大率检测上升球的数量。较高上升球数量的观测结果表明重度界面电流腐蚀。
C.接合球的抗湿性测试:
将线球接合到Al-0.5wt.-%Cu接合垫。在高加速应力测试(HAST)室中将具有如此接合线的测试装置存储在130℃温度、85%相对湿度(RH)下达8小时,且随后在低倍显微镜(尼康MM-40)下以100×放大率检测上升球的数量。较高上升球数量的观测结果表明重度界面电流腐蚀。
D.维氏微硬度(Vickers Micro-hardness):
使用具有维氏(Vickers)压痕器的Mitutoyo HM-200测试设备测量硬度。将10mN压痕负载的力施加到线的测试样品达12秒的停留时间。在线芯的中心上和FAB上进行测试。
E.针脚式接合工艺窗区域:
通过标准程序进行接合工艺窗区域的测量。使用KNS-iConn接合机工具(库力索法工业有限公司,华盛顿堡,宾夕法尼亚州,美国)接合测试线。工艺窗值是基于具有18μm的平均直径的线,其中与线接合的引线指状物由银组成。
通过克服两个主要故障模式导出工艺窗的四个角:
(1)供应过低力和超声波能导致线无法粘附于引线指状物上(NSOL,non-stick onlead finger),和
(2)供应过高力和超声波能导致线短尾(SHTL)。
F.电阻率:
将测试样品(即长度为1.0米的线)的两端连接到提供恒定电流/电压的电源。用装置记录针对供应电压的电阻。测量装置为HIOKI模型3280-10,且用至少10个测试样品来重复测试。测量值的算术平均值用于以下给出的计算。
根据R=V/I计算电阻R。
根据ρ=(R×A)/L计算比电阻ρ,其中A为线的平均截面积,且L为用于测量电压的装置的两个测量点之间的线长度。
根据σ=1/ρ计算比电导率。
G.伸长率(EL):
使用Instron-5564仪器测试线的拉伸特性。以2.54cm/min速度针对254mm标距(L)测试线。按照ASTM标准F219-96获取断裂(fracture或break)上的负载和伸长率。伸长率为拉伸测试起始和结束之间线的标距(△L)的差,其通常报告为(100·△L/L)(以百分比计),其用所记录的负载比延伸率拉伸图来计算。用断裂和屈服负载除以线区域来计算拉伸强度和屈服强度。通过量尺寸方法、称重标准长度的线和使用其密度来测量线的实际直径。
H.线的电迁移测试:
在50×放大率的低倍显微镜尼康MM40的物镜下,在PTFE板上以厘米内的距离使两条线保持平行。通过微量吸管在待用电连接的两条线之间形成水滴。将一条线连接到正极且将另一条连接到负极,且向线施加5V。在闭路中对两条线施加5V偏压,将其串联到10kΩ电阻器。通过使用作为电解质的数滴去离子水润湿两条线来使电路闭合。银在电解质中从阴极电迁移到阳极形成银树突,有时两条线桥接在一起。银树突生长的速率强烈依赖于合金添加。所测试的线的直径为75μm。
实例1
在各情况下,在坩埚中熔融一定量的具有至少99.99%纯度(“4N”)的银(Ag)、钯(Pd)和金(Au)。将少量银-镍和银-铂母合金添加到熔融物中,且通过搅拌确定所添加的组分的均匀分布。使用以下银-镍和银-铂母合金:
针对表1的合金,添加母合金Ag-0.5wt.-%Ni和Ag-0.5wt.-%Pt的相应组合。
随后用熔融物连续铸造呈8mm棒状物形式的线芯前驱体物品。随后在若干拉伸步骤中拉伸线芯前驱体物品以形成具有18±0.5μm的指定直径的线芯前驱体。线芯的横断面基本上为圆形形状。
在500℃的烘箱设定温度下对拉伸到2mm直径和卷绕于卷筒上的棒状物进行中度分批退火达60分钟的暴露时间。在600℃的烘箱设定温度下对拉伸到47μm的直径的前驱体物品进行第二中度带材退火达0.8秒的暴露时间,且在600℃的烘箱设定温度下对拉伸到27μm的直径的前驱体物品进行第三中度带材退火达0.6秒的暴露时间。在490℃的烘箱设定温度下对18μm线芯前驱体进行最终带材退火达0.6秒的暴露时间,随后在含有0.05vol.-%表面活性剂的水中淬灭如此获得的线。使用氩吹洗气体进行中度分批退火,而使用95vol.-%氮:5vol.-%氮吹洗混合气体进行带材退火。
通过这个程序,制造本发明的合金化银线的若干不同样品1到5和4N纯度的比较性银线(参考)。
表1:银合金1到5的化学组成
表1显示本发明的不同线(样品1到5)的组成。钯含量在3.5到4.5wt.-%范围内。金含量在0.5到1.5wt.-%范围内。镍添加量在200到300wt.-ppm间变化。铂含量各自地保持在50和100wt.-ppm。
测量线样品1到5的粒度且报告平均粒度。在各情况下,结果在2到6μm范围内。针对样品2,平均粒度为2.83μm。
以下表2显示接合线的抗腐蚀性和抗湿性、第2接合工艺窗的性能和FAB形成的效能的评估结果。将上文所定义的线样品1到5以及4N纯银比较性线接合到Al-0.5wt.-%Cu接合垫,且根据上文揭示的测试方法进行测试。除了针对75μm线进行的电迁移测试,所有测试是针对18μm线进行。
表2:从线样品1到5获得的某些测试结果;评估:++++极佳、+++良好、++满意、+较差
所有线样品产生较适用于工业应用的程序窗。观测到接合球的抗腐蚀性和抗湿性的显著改善。特定来说,线样品2显示零球上升的值,相较于4N银线(参考)其为特别的改善。
此外,线样品的银树突状生长大大低于4N纯银线的银树突状生长。
表3显示线样品2的平均粒度和结构组分(线、FAB和热影响区(HAZ))。
表3:退火18μm线样品2的结构分析
附图说明
图1显示18μm银-钯-金-镍-铂合金线(样品2,参见表1)的例示性退火曲线。通过调整移动线的速度将退火时间选择为恒定值。退火温度为x轴的可变参数。曲线图显示线的断裂负载(BL,以克计)和伸长率(EL,以%计)的测量值。通过拉伸测试来测定伸长率。伸长率测量值呈现在所显示的实例中约20%的典型局部最大值,其在约700℃的退火温度下获得。样品线2的退火在490℃下进行,根据图1其比最大伸长率的温度低210℃。这产生约8%的伸长率值,其比最大伸长率值低超过40%。
图2显示18μm银-钯-金-镍-铂合金线(样品2,表1)的例示性离子研磨横截面图像。三个不同位置线的晶粒形态、HAZ和FAB为明显的。在490℃、7.45%EL下对线样品2进行退火。应用1.8的球与线尺寸比率(BSR)和18mA的EFO电流和420μs的EFO时间。
Claims (16)
1.一种包括线芯或由线芯组成的合金化银线,所述线芯本身由以下组成:
(a)钯,其量在3到6wt.-%范围内,
(b)金,其量在0.2到2wt.-%范围内,
(c)镍,其量在20到700wt.-ppm范围内,
(d)铂,其量在20到500wt.-ppm范围内,
(e)银,其量在91.88到96.786wt.-%范围内,和
(f)0到100wt.-ppm的不可避免的杂质,
其中所有以wt.-%和wt.-ppm为单位的量是基于所述芯的总重量,
其中所述合金化银线具有在8到80μm范围内的平均直径。
2.根据权利要求1所述的合金化银线,其具有在12到55μm范围内的平均直径。
3.根据权利要求1或2所述的合金化银线,其中所述钯量在4到5wt.-%范围内。
4.根据权利要求1或2所述的合金化银线,其中所述金量在0.5到1.5wt.-%范围内。
5.根据权利要求1或2所述的合金化银线,其中所述镍量在275到325wt.-ppm范围内。
6.根据权利要求1或2所述的合金化银线,其中所述铂量在75到125wt.-ppm范围内。
7.根据权利要求1或2所述的合金化银线,其中所述银量在93.455到95.3875wt.-%范围内。
8.根据权利要求1或2所述的合金化银线,其在横截面图中具有圆形、椭圆形或矩形形状。
9.根据权利要求1或2所述的合金化银线,其中所述线芯具有表面,其中所述表面为外表面或介于所述线芯和叠加于所述线芯上的涂层之间的界面区域。
10.根据权利要求9所述的合金化银线,其具有叠加于所述线芯上的涂层,其中所述涂层为由贵金属元素制成的单层或由多个叠加相邻子层组成的多层,其中各子层由不同贵金属元素制成。
11.根据权利要求1或2所述的合金化银线,其中所述线芯至少特征在于以下固有特性中的一个:
(1)平均线粒度小于10μm,
(2)线晶粒[100]或[101]或[111]定向平面小于10%,
(3)线孪晶间界分数不超过60%,
(4)FAB呈现两种晶粒结构类型的组合:等轴晶粒和柱状晶粒,
(5)FAB平均粒度≤8μm,
(6)FAB晶粒[101]定向平面小于25%,
(7)FAB孪晶间界分数小于70%,
和/或至少特征在于以下非固有特性中的一个:
(α)抗腐蚀性具有不超过2%接合球上升的值,
(β)抗湿性具有不超过2%接合球上升的值,
(γ)所述线芯的硬度不超过90HV,
(δ)用于针脚式接合的工艺窗区域具有至少12000mA·g的值,
(ε)所述线的电阻率小于4.5μΩ·cm,
(ζ)所述线的屈服强度不超过180MPa,
(η)所述线的银树突状生长不超过4μm/s。
12.一种用于制造根据前述权利要求中任一项所述的合金化银线的方法,其中所述方法至少包括以下步骤:
(1)提供具有根据权利要求1到7中任一项的线芯组成的前驱体物品,
(2)伸长所述前驱体物品以形成线前驱体,直到获得所述线芯的所要最终直径;和
(3)在完成方法步骤(2)后,在400到600℃范围内的烘箱设定温度下,对所获得的线前驱体进行最终带材退火达0.4到0.8秒范围内的暴露时间以形成所述合金化银线,
其中步骤(2)包含在400到800℃的烘箱设定温度下,对所述伸长前驱体物品进行中度分批退火达50到150分钟范围内的暴露时间的一或多个子步骤,和/或在400到800℃的烘箱设定温度下,对所述伸长前驱体物品进行中度带材退火达0.4秒到1.2秒范围内的暴露时间的一或多个子步骤。
13.根据权利要求12所述的方法,其中在400到500℃范围内的烘箱设定温度下进行所述最终带材退火达0.5到0.7秒范围内的暴露时间。
14.根据权利要求12或13所述的方法,其中在能够含有一或多种添加剂的水中淬灭所述最终带材退火的合金化银线。
15.根据权利要求12或13所述的方法,其中在惰性或还原氛围中进行方法步骤(2)的所述中度退火以及方法步骤(3)的所述最终带材退火。
16.一种合金化银线,其通过根据权利要求12到15中任一项所述的方法获得。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002023618A1 (fr) * | 2000-09-18 | 2002-03-21 | Nippon Steel Corporation | Fil de connexion de semi-conducteur et son procede de fabrication |
CN101828255A (zh) * | 2007-12-03 | 2010-09-08 | 新日铁高新材料株式会社 | 半导体装置用接合线 |
CN103131885A (zh) * | 2011-11-21 | 2013-06-05 | 赫劳斯材料工艺有限及两合公司 | 用于半导体器件的接合线 |
CN103155130A (zh) * | 2011-02-10 | 2013-06-12 | 田中电子工业株式会社 | Ag-Au-Pd三元合金接合线 |
CN103681568A (zh) * | 2012-09-04 | 2014-03-26 | 赫劳斯材料工艺有限及两合公司 | 用于接合应用的银合金引线 |
WO2014107040A1 (ko) * | 2013-01-04 | 2014-07-10 | 엠케이전자 주식회사 | 은 합금 본딩 와이어 |
CN104157625A (zh) * | 2013-05-14 | 2014-11-19 | 田中电子工业株式会社 | 高速信号线用接合线 |
WO2015034287A1 (ko) * | 2013-09-04 | 2015-03-12 | 엠케이전자 주식회사 | 은 합금 본딩 와이어 및 그의 제조 방법 |
CN104781920A (zh) * | 2012-09-05 | 2015-07-15 | Mk电子株式会社 | 半导体器件用接合线及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013076548A1 (en) * | 2011-11-26 | 2013-05-30 | Microbonds Inc. | Bonding wire and process for manufacturing a bonding wire |
US8940403B2 (en) * | 2012-01-02 | 2015-01-27 | Wire Technology Co., Ltd. | Alloy wire and methods for manufacturing the same |
EP2768019A3 (en) * | 2013-02-15 | 2014-10-29 | Heraeus Materials Singapore Pte. Ltd. | Copper bond wire and method of making the same |
KR101513493B1 (ko) * | 2013-02-19 | 2015-04-20 | 엠케이전자 주식회사 | 은 합금 본딩 와이어 |
SG11201508519YA (en) * | 2013-05-03 | 2015-11-27 | Heraeus Materials Singapore Pte Ltd | Copper bond wire and method of making the same |
CN104372197A (zh) | 2014-09-26 | 2015-02-25 | 四川威纳尔特种电子材料有限公司 | 半导体封装用银合金线及其制备方法 |
-
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- 2015-09-29 SG SG10201508104TA patent/SG10201508104TA/en unknown
-
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- 2016-08-24 TW TW105127123A patent/TWI649433B/zh active
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- 2016-09-16 KR KR1020177035326A patent/KR102076898B1/ko active IP Right Grant
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002023618A1 (fr) * | 2000-09-18 | 2002-03-21 | Nippon Steel Corporation | Fil de connexion de semi-conducteur et son procede de fabrication |
CN101828255A (zh) * | 2007-12-03 | 2010-09-08 | 新日铁高新材料株式会社 | 半导体装置用接合线 |
CN103155130A (zh) * | 2011-02-10 | 2013-06-12 | 田中电子工业株式会社 | Ag-Au-Pd三元合金接合线 |
CN103131885A (zh) * | 2011-11-21 | 2013-06-05 | 赫劳斯材料工艺有限及两合公司 | 用于半导体器件的接合线 |
CN103681568A (zh) * | 2012-09-04 | 2014-03-26 | 赫劳斯材料工艺有限及两合公司 | 用于接合应用的银合金引线 |
CN104781920A (zh) * | 2012-09-05 | 2015-07-15 | Mk电子株式会社 | 半导体器件用接合线及其制造方法 |
WO2014107040A1 (ko) * | 2013-01-04 | 2014-07-10 | 엠케이전자 주식회사 | 은 합금 본딩 와이어 |
CN104157625A (zh) * | 2013-05-14 | 2014-11-19 | 田中电子工业株式会社 | 高速信号线用接合线 |
WO2015034287A1 (ko) * | 2013-09-04 | 2015-03-12 | 엠케이전자 주식회사 | 은 합금 본딩 와이어 및 그의 제조 방법 |
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