CN107706292A - 发光二极管芯片的制造方法和发光二极管芯片 - Google Patents
发光二极管芯片的制造方法和发光二极管芯片 Download PDFInfo
- Publication number
- CN107706292A CN107706292A CN201710610709.7A CN201710610709A CN107706292A CN 107706292 A CN107706292 A CN 107706292A CN 201710610709 A CN201710610709 A CN 201710610709A CN 107706292 A CN107706292 A CN 107706292A
- Authority
- CN
- China
- Prior art keywords
- chip
- light
- transparency carrier
- emitting diode
- backlight unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 230000011218 segmentation Effects 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011222 crystalline ceramic Substances 0.000 claims description 3
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000004425 Makrolon Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-155413 | 2016-08-08 | ||
| JP2016155413A JP2018026383A (ja) | 2016-08-08 | 2016-08-08 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107706292A true CN107706292A (zh) | 2018-02-16 |
Family
ID=61170546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710610709.7A Pending CN107706292A (zh) | 2016-08-08 | 2017-07-25 | 发光二极管芯片的制造方法和发光二极管芯片 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018026383A (ja) |
| KR (1) | KR20180016944A (ja) |
| CN (1) | CN107706292A (ja) |
| TW (1) | TW201822382A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108372457A (zh) * | 2018-01-31 | 2018-08-07 | 武汉驿路通科技股份有限公司 | 一种低通道阵列波导光栅波分复用器芯片的研磨切割方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060289892A1 (en) * | 2005-06-27 | 2006-12-28 | Lee Jae S | Method for preparing light emitting diode device having heat dissipation rate enhancement |
| CN102117870A (zh) * | 2009-12-30 | 2011-07-06 | 乐金显示有限公司 | 垂直发光二极管及其制造方法 |
| JP2012195404A (ja) * | 2011-03-16 | 2012-10-11 | Toshiba Lighting & Technology Corp | 発光装置および照明装置 |
| JP2014239123A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | 加工方法 |
| CN104733588A (zh) * | 2013-12-20 | 2015-06-24 | 株式会社迪思科 | 发光芯片 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | ＧａＮ系半導体発光素子 |
| JP2011009305A (ja) * | 2009-06-23 | 2011-01-13 | Koito Mfg Co Ltd | 発光モジュール |
| CN104160520A (zh) * | 2012-02-01 | 2014-11-19 | 松下电器产业株式会社 | 半导体发光元件、其制造方法和光源装置 |
| TW201614870A (en) * | 2014-10-08 | 2016-04-16 | Toshiba Kk | Semiconductor light emitting device and method for manufacturing the same |
-
2016
- 2016-08-08 JP JP2016155413A patent/JP2018026383A/ja active Pending
-
2017
- 2017-06-27 TW TW106121380A patent/TW201822382A/zh unknown
- 2017-07-25 CN CN201710610709.7A patent/CN107706292A/zh active Pending
- 2017-07-28 KR KR1020170095988A patent/KR20180016944A/ko not_active Application Discontinuation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060289892A1 (en) * | 2005-06-27 | 2006-12-28 | Lee Jae S | Method for preparing light emitting diode device having heat dissipation rate enhancement |
| CN102117870A (zh) * | 2009-12-30 | 2011-07-06 | 乐金显示有限公司 | 垂直发光二极管及其制造方法 |
| JP2012195404A (ja) * | 2011-03-16 | 2012-10-11 | Toshiba Lighting & Technology Corp | 発光装置および照明装置 |
| JP2014239123A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | 加工方法 |
| CN104733588A (zh) * | 2013-12-20 | 2015-06-24 | 株式会社迪思科 | 发光芯片 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108372457A (zh) * | 2018-01-31 | 2018-08-07 | 武汉驿路通科技股份有限公司 | 一种低通道阵列波导光栅波分复用器芯片的研磨切割方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180016944A (ko) | 2018-02-20 |
| TW201822382A (zh) | 2018-06-16 |
| JP2018026383A (ja) | 2018-02-15 |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180216 |
|
| WD01 | Invention patent application deemed withdrawn after publication |