CN107706292A - The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit - Google Patents
The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit Download PDFInfo
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- CN107706292A CN107706292A CN201710610709.7A CN201710610709A CN107706292A CN 107706292 A CN107706292 A CN 107706292A CN 201710610709 A CN201710610709 A CN 201710610709A CN 107706292 A CN107706292 A CN 107706292A
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- transparency carrier
- emitting diode
- backlight unit
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 230000011218 segmentation Effects 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011222 crystalline ceramic Substances 0.000 claims description 3
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000004425 Makrolon Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit are provided, obtain sufficient brightness.The manufacture method of light-emitting diode chip for backlight unit has following process：Chip preparatory process, prepare following chip：There are laminate layers on crystal growth transparency carrier, be respectively formed with LED circuit in each region divided on the front of laminate layers by a plurality of segmentation preset lines that cross one another, the laminate layers are formed with including multiple semiconductor layers including luminescent layer；Transparency carrier manufacturing procedure, is correspondingly formed multiple grooves on the front of transparency carrier with each LED circuit of chip, and the transparency carrier has multiple through holes in the region of entire surface；Integrated process, after transparency carrier manufacturing procedure is implemented, the front of transparency carrier is pasted and forms integrated chip on the backside of the wafer；And segmentation process, chip is cut off together with transparency carrier along segmentation preset lines and integrated chip is divided into each light-emitting diode chip for backlight unit.
Description
Technical field
The present invention relates to the manufacture method of light-emitting diode chip for backlight unit and light-emitting diode chip for backlight unit.
Background technology
, should formed with laminate layers on the front of the crystal growth substrate such as sapphire substrate, GaN substrate, SiC substrate
Laminate layers, will be on the laminate layers by the way that n-type semiconductor layer, luminescent layer and p-type semiconductor layer laminated multi-layer are formed
Formed with multiple LED (Light Emitting Diode in the region marked off by a plurality of segmentation preset lines intersected：Luminous two
Pole pipe) etc. luminescent device chip along segmentation preset lines cut-out and be divided into each light-emitting device chip, split obtained hair
Optical device chip is widely used in the various electronic equipments such as mobile phone, personal computer, lighting apparatus.
Due to there is isotropism from the light of the luminescent layer of light-emitting device chip injection, thus light can also be irradiated to crystal into
The inside of length substrate and also projected from the back side of substrate and side.However, in the light of inside of substrate is irradiated to, due to base
The incidence angle of the interface of plate and air layer occurs total reflection on interface for light more than critical angle and is held in inside substrate,
Outside will not be injected to from substrate, so the problem of in the presence of the luminance-reduction for causing light-emitting device chip.
In order to solve the problem, following light emitting diode has been recorded in Japanese Unexamined Patent Publication 2014-175354 publications
(LED)：In order to suppress to be held in the inside of substrate from the light that luminescent layer projects, by transparent component paste on the back of the substrate and
Realize the raising of brightness.
Patent document 1：Japanese Unexamined Patent Publication 2014-175354 publications
However, in the light emitting diode disclosed in patent document 1, there are the following problems：Although by by transparent component
It is pasted onto the back side of substrate and slightly increases brightness, but sufficient brightness can not be obtained.
The content of the invention
The present invention be in view of such point and complete, its object is to, there is provided the luminous of sufficient brightness can be obtained
The manufacture method and light-emitting diode chip for backlight unit of diode chip for backlight unit.
According to the invention described in technical scheme 1, there is provided the manufacture method of light-emitting diode chip for backlight unit, it is characterised in that the hair
The manufacture method of luminous diode chip has following process：Chip preparatory process, prepare following chip：The chip is in crystal
There are laminate layers on growth transparency carrier, drawn on the front of the laminate layers by a plurality of segmentation preset lines to cross one another
Point each region in be respectively formed with LED circuit, wherein, the laminate layers comprising multiple including luminescent layer formed with partly leading
Body layer；Transparency carrier manufacturing procedure, each LED circuit with the chip on the front of transparency carrier are correspondingly formed multiple grooves,
Wherein, the transparency carrier has multiple through holes in the region of entire surface；Integrated process, implementing the transparency carrier
After manufacturing procedure, the front of the transparency carrier is pasted onto on the back side of the chip and forms integrated chip；And segmentation
Process, the chip is cut off together with the transparency carrier along the segmentation preset lines and the integrated chip is divided into each hair
Luminous diode chip.
It is preferred that the cross sectional shape of the groove formed in transparency carrier manufacturing procedure is in triangle, quadrangle or semicircle
Arbitrary shape.It is preferred that the groove formed in transparency carrier manufacturing procedure by cutting tool, etch, sandblast and laser in appoint
Meaning mode is formed.
It is preferred that the transparency carrier is formed by any materials in crystalline ceramics, optical glass, sapphire and transparent resin,
The transparency carrier is bonded on chip by transparent adhesive in the integrated process.
According to the invention described in technical scheme 5, there is provided light-emitting diode chip for backlight unit, wherein, the light-emitting diode chip for backlight unit has：
Light emitting diode, it is on front formed with LED circuit；And transparent component, it is pasted onto on the back side of the light emitting diode,
There are multiple through holes in the region of entire surface, on the face that the transparent component is pasted with the light emitting diode formed with
Groove.
On the light-emitting diode chip for backlight unit of the present invention, due to the shape on the front of the transparent component at the back side for being pasted on LED
Into having groove and on transparent component formed with multiple through holes, so the surface area of transparent component increases, and light is intricately
The light for reflecting and making pass in transparent component is reduced, and the amount of the light projected from transparent component increases and makes light-emitting diode chip for backlight unit
Brightness improves.
Brief description of the drawings
Fig. 1 is the face side stereogram of optical device wafer.
Fig. 2 (A) is the stereogram for showing transparency carrier manufacturing procedure, and Fig. 2 (B)~Fig. 2 (D) is to show to be formed
Groove shape sectional view.
Fig. 3 (A) is to show the transparency carrier on front with the multiple grooves extended along the 1st direction being pasted onto chip
The back side on and carry out integration integrated process stereogram, Fig. 3 (B) is the stereogram of integrated chip.
Fig. 4 is to show will there is the multiple grooves extended along the 1st direction and 2nd direction vertical with the 1st direction on front
Transparency carrier paste on the backside of the wafer and carry out integration integrated process stereogram.
Fig. 5 is the solid of supporting process for showing to support integrated chip using ring-shaped frame by dicing tape
Figure.
Fig. 6 is the stereogram for showing integrated chip being divided into the segmentation process of light-emitting diode chip for backlight unit.
Fig. 7 be show segmentation process terminate after integrated chip stereogram.
Fig. 8 is the stereogram of the light-emitting diode chip for backlight unit of embodiment of the present invention.
Label declaration
10：Cutting unit；11：Optical device wafer (chip)；13：Sapphire substrate；14：Cutting tool；15：Layered product
Layer；17：Split preset lines；19：LED circuit；21：Transparency carrier；21A：Transparent component；23、23A、23B：Groove；25：Integration
Chip；27：Cutting groove；29：Through hole；31：Light-emitting diode chip for backlight unit.
Embodiment
Hereinafter, embodiments of the present invention are described in detail referring to the drawings.Reference picture 1, show optical device crystalline substance
The face side stereogram of piece (below, sometimes referred to simply as chip) 11.
Optical device wafer 11 is configured to be laminated with gallium nitride (GaN) homepitaxy layer (laminate layers) on sapphire substrate 13
15.Optical device wafer 11, which has, is laminated with the back side 11b that the positive 11a and sapphire substrate 13 of epitaxial layer 15 are exposed.
Here, in the optical device wafer 11 of present embodiment, crystal growth base is used as using sapphire substrate 13
Plate, but sapphire substrate 13 can also be replaced and use GaN substrate or SiC substrate etc..
Laminate layers (epitaxial layer) 15 be by make electronics be majority carrier n-type semiconductor layer (for example, n-type GaN
Layer), the semiconductor layer (for example, InGaN layer) as luminescent layer, hole for majority carrier p-type semiconductor layer (for example, p-type
GaN layer) in order epitaxial growth and formed.
Sapphire substrate 13 is for example with 100 μm of thickness, and laminate layers 15 are for example with 5 μm of thickness.In layered product
Divided on layer 15 by being formed as a plurality of segmentation preset lines 17 of clathrate and formed with multiple LED circuits 19.Chip 11 has
The back side 11b that positive 11a and sapphire substrate 13 formed with LED circuit 19 are exposed.
According to the manufacture method of the light-emitting diode chip for backlight unit of embodiment of the present invention, first, implement chip preparatory process, it is accurate
Optical device wafer 11 shown in standby Fig. 1.Also, implement transparency carrier preparatory process, prepare shown in Fig. 2 (A) in entire surface
Region in have multiple through holes transparency carrier 21.
And then implement transparency carrier manufacturing procedure, in the front of the transparency carrier 21 for the back side 11b for being pasted on chip 11
21a is upper to be correspondingly formed multiple grooves with LED circuit 19.For example, processed using well known topping machanism to implement the transparency carrier
Process.
As shown in Fig. 2 (A), the cutting unit 10 of topping machanism includes：Main shaft shell 12；Main shaft (not shown), its with
The mode that can be rotated is inserted into main shaft shell 12；And cutting tool 14, it is arranged on the front end of main shaft.
The electroforming grinding tool that the cutting edge of cutting tool 14 secures diamond abrasive grain for example by nickel plating is formed, before it
End is shaped as triangle, quadrangle or semicircle.
The generally part of cutting tool 14 is covered by cutter hood (wheel cover) 16, is equipped with cutter hood 16 in bite
The inboard of tool 14 and nearby a pair of (illustrate only 1) cooling nozzles 18 of side horizontal extension.
In transparency carrier manufacturing procedure, multiple grooves 23 are formed on the positive 21a of transparency carrier 21, utilization is (not shown)
The chuck table of topping machanism carries out attracting holding to transparency carrier 21.Then, while making cutting tool 14 according to arrow R side
To high speed rotation while the positive 21a of transparency carrier 21 is cut with defined depth, to being maintained at chuck table (not shown)
On transparency carrier 21 be processed feeding on arrow X1 directions, thus, by cut formed along the 1st direction extend groove
23。
While to transparency carrier 21 according to the spacing of the segmentation preset lines 17 of chip 11 in the side vertical with arrow X1 directions
Index feed is carried out upwards, while cut the positive 21a of transparency carrier 21, so as to shape successively as shown in Figure 3
Into the multiple grooves 23 extended along the 1st direction.
As shown in Fig. 3 (A), the multiple grooves 23 for being formed at the positive 21a of transparency carrier 21 can be only in one direction
The mode of elongation, or can also be as shown in figure 4, being formed on the positive 21a of transparency carrier 21 along the 1st direction and with the 1st
Multiple grooves 23 of vertical the 2nd direction elongation in direction.
The groove for being formed at the positive 21a of transparency carrier 21 can be the section triangle shown in Fig. 2 (B) groove 23 or
It is arbitrary in the semicircular groove 23B in section shown in the groove 23A or Fig. 2 of section quadrangle shown in Fig. 2 (C) (D)
Groove.
Transparency carrier 21 is formed by any materials in transparent resin, optical glass, sapphire and crystalline ceramics.In this reality
Apply in mode, transparency carrier 21 is formed by having the transparent resins such as the makrolon of durability, propylene than optical glass.Separately
Outside, as formed groove method, can also use sandblast, etch, laser.
Multiple grooves 23,23A, 23B transparency carrier manufacturing procedure are formed on the positive 21a implemented in transparency carrier 21
Afterwards, implement integrated process, transparency carrier 21 is pasted onto on the back side 11b of chip 11 and forms integrated chip 25.
In the integrated process, as shown in Fig. 3 (A), the back side 11b of chip 11 is adhered to by transparent adhesive
On the front of transparency carrier 21 formed with the multiple grooves 23 extended along the 1st direction on positive 21a, as shown in Fig. 3 (B),
Chip 11 and the integration of transparency carrier 21 are formed into integrated chip 25.
As instead of embodiment, the back side 11b of chip 11 can also be adhered in transparent base by transparent adhesive
There is the transparent base of the multiple grooves 23 extended along the 1st direction and 2nd direction vertical with the 1st direction on the positive 21a of plate 21
It is on the positive 21a of plate 21 and chip 11 and transparency carrier 21 is integrated.Here, it is formed at the positive 21a's of transparency carrier 21
The spacing of groove 23 is corresponding with the spacing of the segmentation preset lines 17 of chip 11.
After integrated process is implemented, as shown in figure 5, implementing supporting process, by the transparent base of integrated chip 25
Plate 21 is pasted onto peripheral part and is glued on ring-shaped frame F dicing tape T and forms frame unit, is utilized by dicing tape T
Ring-shaped frame F supports to integrated chip 25.
After supporting process is implemented, implement segmentation step, frame unit is put into topping machanism, utilizes cutting
Device is cut integrated chip 25 and is divided into each light-emitting diode chip for backlight unit.Reference picture 6 is carried out to the segmentation step
Explanation.
In segmentation step, by integrated chip 25 across frame unit dicing tape T attracting holdings in topping machanism
On chuck table 20, ring-shaped frame F is clamped and fixed by fixture (not shown).
Then, cutting tool 14 is made to be rotated according to arrow R directions while cutting the front end of cutting tool 14 at a high speed
The segmentation preset lines 17 of chip 11 are until reaching dicing tape T, and while from cooling nozzles 18 towards cutting tool 14 and chip
11 processing stand provides cutting fluid, while feeding is processed on arrow X1 directions to integrated chip 25, thus, along crystalline substance
The segmentation preset lines 17 of piece 11 form the cutting groove 27 for cutting off chip 11 and transparency carrier 21.
While carry out index feed in the Y-axis direction to cutting unit 10, while along the segmentation extended on the 1st direction
Preset lines 17 sequentially form same cutting groove 27.Then, after chuck table 20 is rotated by 90 °, along with the 1st side
The whole segmentation preset lines 17 extended on to the 2nd vertical direction form same cutting groove 27 and turn into the shape shown in Fig. 7
State, so as to which integrated chip 25 to be divided into the light-emitting diode chip for backlight unit 31 shown in Fig. 8.
In the above-described embodiment, although integrated chip 25 is divided into each light emitting diode using topping machanism
Chip 31, but can also be along the sharp of segmentation preset lines 13 wavelength with permeability for chip 11 and the irradiation of transparency carrier 21
Light beam and the inside through-thickness in chip 11 and transparency carrier 21 forms multilayer modification layer, then, to integrated chip 25
Apply external force and integrated chip 25 is divided into each light-emitting diode chip for backlight unit 31 as segmentation starting point to modify layer.
In the light-emitting diode chip for backlight unit 31 shown in Fig. 8, there is the LED 13A of LED circuit 19 on the back side on front
It is pasted with the transparent component 21A for foring multiple through holes.Also, formed with groove 23 on transparent component 21A front.
Therefore, in the light-emitting diode chip for backlight unit 31 shown in Fig. 8, due on transparent component formed with multiple through holes simultaneously
And on the front face formed with groove 23, so transparent component 21A surface area increase.Therefore, light in transparent component intricately
The light for reflecting and making pass in transparent component is reduced, the amount increase of the light projected from transparent component 21A, light-emitting diode chip for backlight unit 31
Brightness improve.
Claims (5)
1. a kind of manufacture method of light-emitting diode chip for backlight unit, it is characterised in that the manufacture method of the light-emitting diode chip for backlight unit has
Following process：
Chip preparatory process, prepare following chip：The chip has laminate layers on crystal growth transparency carrier, at this
LED circuit is respectively formed with each region divided on the front of laminate layers by a plurality of segmentation preset lines to cross one another, its
In, the laminate layers are formed with including multiple semiconductor layers including luminescent layer；
Transparency carrier manufacturing procedure, each LED circuit with the chip on the front of transparency carrier are correspondingly formed multiple grooves, its
In, the transparency carrier has multiple through holes in the region of entire surface；
Integrated process, after the transparency carrier manufacturing procedure is implemented, the front of the transparency carrier is pasted onto the chip
The back side on and form integrated chip；And
Segmentation process, the chip is cut off together with the transparency carrier along the segmentation preset lines and splits the integrated chip
Into each light-emitting diode chip for backlight unit.
2. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, wherein,
The cross sectional shape of the groove formed in the transparency carrier manufacturing procedure is in triangle, quadrangle and semicircle
Arbitrary shape.
3. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, wherein,
In the transparency carrier manufacturing procedure, by cutting tool, etch, sandblast and laser in any-mode to be formed
State groove.
4. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, wherein,
The transparency carrier is formed by any materials in crystalline ceramics, optical glass, sapphire and transparent resin, in the one
The transparency carrier is pasted on this wafer using transparent adhesive in chemical industry sequence.
5. a kind of light-emitting diode chip for backlight unit, wherein,
The light-emitting diode chip for backlight unit has：
Light emitting diode, it is on front formed with LED circuit；And
Transparent component, it is pasted onto on the back side of the light emitting diode, has multiple through holes in the region of entire surface,
Formed with groove on the face pasted with the light emitting diode of the transparent component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-155413 | 2016-08-08 | ||
| JP2016155413A JP2018026383A (en) | 2016-08-08 | 2016-08-08 | Manufacturing method of light-emitting diode chip and light-emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107706292A true CN107706292A (en) | 2018-02-16 |
Family
ID=61170546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710610709.7A Pending CN107706292A (en) | 2016-08-08 | 2017-07-25 | The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018026383A (en) |
| KR (1) | KR20180016944A (en) |
| CN (1) | CN107706292A (en) |
| TW (1) | TW201822382A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108372457A (en) * | 2018-01-31 | 2018-08-07 | 武汉驿路通科技股份有限公司 | A kind of grinding and cutting process of low pass channel array waveguide grating multiplexer chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060289892A1 (en) * | 2005-06-27 | 2006-12-28 | Lee Jae S | Method for preparing light emitting diode device having heat dissipation rate enhancement |
| CN102117870A (en) * | 2009-12-30 | 2011-07-06 | 乐金显示有限公司 | Vertical light emitting diode and manufacturing method of the same |
| JP2012195404A (en) * | 2011-03-16 | 2012-10-11 | Toshiba Lighting & Technology Corp | Light-emitting device and luminaire |
| JP2014239123A (en) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | Processing method |
| CN104733588A (en) * | 2013-12-20 | 2015-06-24 | 株式会社迪思科 | Light emitting chip |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278751A (en) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | Garium nitride-based semiconductor light emitting element |
| JP2011009305A (en) * | 2009-06-23 | 2011-01-13 | Koito Mfg Co Ltd | Light-emitting module |
| CN104160520A (en) * | 2012-02-01 | 2014-11-19 | 松下电器产业株式会社 | Semiconductor light-emitting element, method for manufacturing same, and light source device |
| TW201614870A (en) * | 2014-10-08 | 2016-04-16 | Toshiba Kk | Semiconductor light emitting device and method for manufacturing the same |
-
2016
- 2016-08-08 JP JP2016155413A patent/JP2018026383A/en active Pending
-
2017
- 2017-06-27 TW TW106121380A patent/TW201822382A/en unknown
- 2017-07-25 CN CN201710610709.7A patent/CN107706292A/en active Pending
- 2017-07-28 KR KR1020170095988A patent/KR20180016944A/en not_active Application Discontinuation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060289892A1 (en) * | 2005-06-27 | 2006-12-28 | Lee Jae S | Method for preparing light emitting diode device having heat dissipation rate enhancement |
| CN102117870A (en) * | 2009-12-30 | 2011-07-06 | 乐金显示有限公司 | Vertical light emitting diode and manufacturing method of the same |
| JP2012195404A (en) * | 2011-03-16 | 2012-10-11 | Toshiba Lighting & Technology Corp | Light-emitting device and luminaire |
| JP2014239123A (en) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | Processing method |
| CN104733588A (en) * | 2013-12-20 | 2015-06-24 | 株式会社迪思科 | Light emitting chip |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108372457A (en) * | 2018-01-31 | 2018-08-07 | 武汉驿路通科技股份有限公司 | A kind of grinding and cutting process of low pass channel array waveguide grating multiplexer chip |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180016944A (en) | 2018-02-20 |
| TW201822382A (en) | 2018-06-16 |
| JP2018026383A (en) | 2018-02-15 |
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