CN107634039A - A kind of heat dissipation film and preparation method thereof - Google Patents
A kind of heat dissipation film and preparation method thereof Download PDFInfo
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- CN107634039A CN107634039A CN201710645365.3A CN201710645365A CN107634039A CN 107634039 A CN107634039 A CN 107634039A CN 201710645365 A CN201710645365 A CN 201710645365A CN 107634039 A CN107634039 A CN 107634039A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 121
- 239000002184 metal Substances 0.000 claims abstract description 121
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 18
- 239000002159 nanocrystal Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 230000012010 growth Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 235000013339 cereals Nutrition 0.000 claims description 11
- 150000001721 carbon Chemical group 0.000 claims description 9
- 241000209094 Oryza Species 0.000 claims description 8
- 235000007164 Oryza sativa Nutrition 0.000 claims description 8
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- 238000010899 nucleation Methods 0.000 claims description 8
- 235000009566 rice Nutrition 0.000 claims description 8
- 125000004429 atom Chemical group 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 3
- 230000026267 regulation of growth Effects 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 239000004020 conductor Substances 0.000 description 1
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Abstract
The invention provides a kind of heat dissipation film and preparation method thereof, using the heat dissipation film of graphene film the first nano metal layer the second nano metal layer, quick heat radiating is realized using graphene film, utilize the higher air-gap accounting of the first nano metal layer, the short-range diffusion in the first nano metal layer and quick transmission are realized, even heat can be made to enter in the second nano metal layer；Second nano metal layer has relatively low air-gap accounting, from so as to realize the quick conduction to heat, so that heat is fast and effectively transmitted and exhaled from graphene film.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of heat dissipation film and preparation method thereof.
Background technology
With the development of smart mobile phone, the dominant frequency more and more higher of chip, power is increasing, can so produce substantial amounts of heat
Amount, as heat in time everywhere, can not can cause the reduction of frequency, while thermal source position thermal sensation is strong.Cell-phone heating not only shadow
Comfort is rung, can also influence the performance of mobile phone.Mobile phone excessive heating can also burn out hardware, more likely cause when charging
Fire.
When mobile phone is run, cell output current, heat can be all produced when passing through all parts, so cell-phone heating is normal
, heat caused by machine operation mainly by back everywhere, not have temperature to be only abnormal at back when mobile phone is run.
In general normal temperature when mobile phone is run is 30~50 degree, and more than the 50 degree comforts not only held can drop
It is low, and the performance of mobile phone can also be affected.The reason for mobile phone overheats mainly has three aspects：Section resistance is excessive；Heat conduction
Insufficient, radiating is unreasonable, causes heat to be assembled in interior of mobile phone, overheats a certain position；Long-play software is excessive, work(
Rate increase.
Existing mobile phone heat dissipating method, including：Metal backing heat conduction, graphite heat radiation fin heat conduction, thermally conductive gel radiating, heat pipe
Radiating etc., however, these methods are all passively to radiate, radiating effect is general.
Therefore, the effective radiating studied to terminal device is significant.
The content of the invention
In order to overcome problem above, the present invention is intended to provide a kind of heat dissipation film and preparation method thereof, so as to realize heat dissipation film
Homogeneouslly-radiating and heat conduction rate.
In order to achieve the above object, the invention provides a kind of heat dissipation film, it includes：Graphene film, positioned at graphene
First nano metal layer of film bottom and the second nano metal layer positioned at the first nano metal layer bottom；Wherein, first receive
The air-gap accounting of rice metal level is more than the air-gap accounting of the second nano metal layer.
In one embodiment, the upper surface of the graphene film has electrostatic charge.
In one embodiment, the first nano metal layer is made up of 1-dimention nano crystal grain, and 1-dimention nano crystal grain and graphene are thin
The carbon atom of film is mutually bonded.
In one embodiment, the Qu Xiangyu graphene films of 1-dimention nano crystal grain are vertical.
In one embodiment, the thickness of the second nano metal layer is more than the thickness of the first nano metal layer.
In one embodiment, the crystallite dimension of the second nano metal layer is more than the crystal grain chi of the first nano metal layer
It is very little.
In one embodiment, contacted with each other between the crystal grain of the second nano metal layer and be not present space, and crystal grain
Between interface mutually merge.
In order to achieve the above object, present invention also offers a kind of preparation method of heat dissipation film, it includes：
Step 01：One graphene film is provided, and the graphene film is transferred to the flat table of semi-conductive substrate
On face；
Step 02：Planarization process is carried out to graphene film；
Step 03：The nano metal layer of growth regulation one on graphene film；
Step 04：The second nano metal layer is deposited on the first nano metal layer；
Step 05：Graphene film with the first nano metal layer and the second nano metal layer and Semiconductor substrate are shelled
Leave and.
In one embodiment, it is characterised in that in step 05, also include before being peeled off：By graphene film upward,
Electrostatic charge application technique is carried out to the upper surface of graphene film exposure.
In one embodiment, in the step 02, carrying out planarization process to graphene film includes：In Semiconductor substrate
In be provided with a plurality of pipeline, with a plurality of pipeline contact below graphene film, vacuumize process is carried out to a plurality of pipeline, makes graphite
Alkene film is closely attached to semiconductor substrate surface and the processing that is flattened.
In one embodiment, also include in the step 05：Identical electric charge is applied to graphene film edge；Then,
Ring electric field is applied to graphene film perimeter, the electric charge of ring electric field and graphene film edge attracts each other, so as to
Pulling force is produced to graphene film, planarizes graphene film.
In one embodiment, the step 03 includes：
Step 031：Using plasma atom layer deposition process carries out first nanometer on the carbon atom of graphene film
The grain nucleation of metal；
Step 032：Using reaction temperature is improved, continuing using plasma atom layer deposition process makes the first nano metal
The further forming core of crystal grain and grow up, turn into 1-dimention nano crystal grain.
In one embodiment, in the step 04, the second nano metal layer of deposition includes：Using plasma enhancing chemistry
Gas-phase deposition the second nano metal of continued growth layer on the first nano metal layer.
In one embodiment, the growth temperature of the second nano metal layer is more than the growth of the first nano metal layer
Temperature.
Heat dissipation film of the present invention and preparation method thereof, using the nano metal of graphene film-the first the-the second nano metal of layer
The heat dissipation film of layer, quick heat radiating is realized using graphene film, real using the higher air-gap accounting of the first nano metal layer
Short-range diffusion and quick transmission in existing first nano metal layer, can be such that even heat enters in the second nano metal layer；The
Two nano metal layers have relatively low air-gap accounting, from so as to realize the quick conduction to heat, so that heat is from graphene
Film is fast and effectively transmitted and exhaled.
Brief description of the drawings
Fig. 1 is the cross section structure schematic diagram of the heat dissipation film of the preferred embodiment of the present invention
Fig. 2 is the schematic flow sheet of the preparation method of the heat dissipation film of the preferred embodiment of the present invention
Fig. 3~7 are each step schematic diagram of the preparation method of Fig. 2 of present invention heat dissipation film
Fig. 8 is carbon atom up shape of the first nano metal layer in graphene film of the preferred embodiment of the present invention
The schematic diagram of core
Fig. 9 is that the song on the carbon atom of graphene film of the preferred embodiment of the present invention is received to the first of growth
The schematic diagram of the crystal grain of rice metal level
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
A kind of heat dissipation film of the present invention, including：Graphene film, the first nano metal layer positioned at graphene film bottom
With the second nano metal layer positioned at the first nano metal layer bottom.Also, the air-gap accounting of the first nano metal layer is more than
The air-gap accounting of second nano metal layer.
The present invention is described in further detail below in conjunction with accompanying drawing 1~9 and specific embodiment.It should be noted that accompanying drawing
Using very simplified form, using non-accurately ratio, and only to it is convenient, clearly reach aid illustration the present embodiment
Purpose.
Referring to Fig. 1, a kind of heat dissipation film of the present embodiment includes：Graphene film G, positioned at graphene film G bottoms
First nano metal layer 01 and the second nano metal layer 02 positioned at the bottom of the first nano metal layer 01；Wherein, the first nanogold
The air-gap accounting for belonging to layer 01 is more than the air-gap accounting of the second nano metal layer 02, that is to say, that the first nano metal layer 01
More loose, the second nano metal layer 02 is dense film.
In the present embodiment, graphene film G upper surface has electrostatic charge, so that heat dissipation film can be with treating thermal dissipating object
Surface is fully bonded, for example, battery, circuit board in electric terminal equipment etc., or the housing of electric terminal equipment, such as mobile phone
Housing.
In the present embodiment, the first nano metal layer 01 of use is made up of 1-dimention nano crystal grain, one-dimensional as shown in Fig. 8~9
The nucleus H and graphene film G of nanocrystal carbon atom C phases are bonded.The air-gap of first nano metal layer 01 is larger, this
Sample, because 1-dimention nano crystal grain and carbon atom bonding grow, heat directly passes to One-dimensional nanocrystal, Ke Yiti from carbon atom
The quick transmission for the heat that high graphene film G comes out, also, the air-gap in the first nano metal layer 01, can make
There is a short-range diffusion in the first nano metal layer 01 from the heat that graphene film G comes out so that heat can
Uniformly rapidly enter the second nano metal layer 02.Here, the air-gap and the second nano metal layer in the first nano metal layer 01
The ratio of 02 air-gap is more than 1, preferably, in order to more preferably realize short-range diffusion and even into the first nano metal layer 01
In air-gap and the second nano metal layer 02 air-gap ratio be more than 100.
Here, the Qu Xiangyu graphene films G of 1-dimention nano crystal grain can also be set vertical, so that graphene film
The heat that G comes out more rapidly transmits.Based on the structure of above-mentioned first nano metal layer 01, it is better achieved first and receives
The heat of rice metal level 01 quickly transmits and effectively uniformly diffusion, and the thickness of the first nano metal layer 01 can be set to be less than second
The thickness of nano metal layer 02, preferably, the thickness of the first nano metal layer 01 is not more than 20nm, so that it is guaranteed that the first nanogold
Belong to the short-range diffusion of layer 01 and be transmitted to the speed of the second nano metal layer 02.
In the present embodiment, contacted with each other between the crystal grain of the second nano metal layer 02 and space is not present, and between crystal grain
Interface mutually merge, the heat diffused into from the first nano metal layer 01 in the second nano metal layer 02, received from second
Rice metal level 02 is quickly delivered to the external world, here it is possible to set the crystallite dimension of the second nano metal layer 02 to be more than first nanometer
The crystallite dimension of metal level 01, the crystallite dimension of the second nano metal layer 02 is larger and mutual fusion, reduces the second nanogold
The crystal boundary belonged in layer 02 hinders, and can make the second nano metal of Btu utilization layer 02 into the second nano metal layer 02 as Jie
Matter is quickly transmitted.
In addition, in the present embodiment, the material of the first nano metal layer 01 can use copper nanocrystallite grain or aluminum nanocrystalline grain
The big and nanocrystal of the metal material of good heat conductivity Deng thermal diffusion coefficient, needs exist for explanation, the grain of nanocrystal
Footpath is not more than 1000nm.Here, the material of the second nano metal layer 02 can be identical with the material of the first nano metal layer 01.This
In, graphene film G uses monoatomic-layer graphene film, so as to improve radiating efficiency.
Fig. 2~7 are referred to, the preparation method of the above-mentioned heat dissipation film of the present embodiment, following process can be used：
Step 01：Referring to Fig. 3, providing a graphene film G, and graphene film G is transferred to semi-conductive substrate
On 00 flat surfaces；
Specifically, can be, but not limited to prepare monoatomic-layer graphene film using chemical vapor deposition method, then,
The organic materials such as PMMA will be utilized to adhere to monoatomic-layer graphene film and be transferred to semiconductor substrate surface, then PMMA will be gone
Remove.
Step 02：Referring to Fig. 4, planarization process is carried out to graphene film G；
Specifically, following process can be used by carrying out planarization process to graphene film G：Set in Semiconductor substrate 00
A plurality of pipeline, graphene film G lower sections and a plurality of pipeline contact are equipped with, vacuumize process is carried out to a plurality of pipeline, makes graphene
Film G is closely attached to the surface of Semiconductor substrate 00 and the processing that is flattened.
Step 03：Referring to Fig. 5, the nano metal layer 01 of growth regulation one on graphene film G；
Specifically, incorporated by reference to Fig. 8~9, this step 03 can use following process：
Step 031：Referring to Fig. 8, using plasma atom layer deposition process is on graphene film G carbon atom C
Carry out the grain nucleation H of the first nano metal layer 01；Here, forming core is carried out using low temperature plasma atom layer deposition process,
Grain nucleation H can be avoided excessive and the reunion between grain nucleation H occurs so that the nucleus H formed can be with graphite
Carbon atom C on alkene film G carries out accurate alignment and is fully bonded, preferably, reaction temperature is below 150 DEG C.
Step 032：Referring to Fig. 9, improving reaction temperature, continuing using plasma atom layer deposition process makes first to receive
The grain nucleation H of rice metal level 01 further grows up, and turns into 1-dimention nano crystal grain.Here, reaction temperature is improved, crystal grain can be made
Forming core H fast growths are simultaneously bent to growth, and because reaction temperature improves, being grown up for follow-up grain nucleation H provides the heat of abundance and move
Mechanical condition, however, also to avoid the too high intercrystalline air-gap accounting of temperature from reducing, preferably, reaction temperature is brought up to not
More than 200 DEG C.
Step 04：Referring to Fig. 6, the second nano metal layer 02 is deposited on the first nano metal layer 01；
Specifically, the process of the second nano metal layer 02 of deposition can strengthen chemical vapor deposition method with using plasma
The second nano metal of continued growth layer 02 on the first nano metal layer 01.The using plasma of second nano metal layer 02 chemistry
Crystal grain obtained by gas-phase deposition is more larger than the crystal grain obtained by the first nano metal layer 01, also, consistency is higher, because
The temperature of plasma activated chemical vapour deposition technique is higher, can be provided for the crystal grain of the second nano metal layer 02 more sufficient
Thermokinetics condition so that the crystal grain fast growth of the second nano metal layer 02 simultaneously merges, preferably, the second nano metal
The growth temperature of layer 02 is more than the growth temperature of the first nano metal layer 01, so that the crystal grain of the second nano metal layer 02 is more than
The crystal grain of first nano metal layer 01.The crystallite dimension of second nano metal layer 02 is larger and merges so that second nanometer
Air-gap accounting in metal level 02 reduces even without the crystal boundary of the second nano metal layer 02 reduces, and reduces and is received to second
The obstruction of heat transmission inside rice metal level 02, make second this heat transfer medium of nano metal layer 02 with higher heat biography
Lead speed.
Step 05：Referring to Fig. 7, by the graphene film with the first nano metal layer 01 and the second nano metal layer 02
G peels away with Semiconductor substrate 00.
Specifically, it can also include before stripping：The upper table that on graphene film 0G, will be exposed to graphene film G
Face carries out electrostatic charge and applies technique, so that graphene film table G faces have electrostatic charge, graphene film G can be made more preferable
Ground and the good close attaching for treating thermal dissipating object, improve radiating effect.
Then, peeled off.Peeling off can use mechanical stripping method, chemical peeling etc., in the present embodiment, use
Following manner：Identical electric charge is applied to graphene film G edges；Then, annular electro is applied to graphene film G perimeters
, the electric charge of ring electric field and graphene film G edges attracts each other, so that graphene film G is drawn by all directions
Power, pulling force reduce the adhesive force between graphene film G and Semiconductor substrate 00, so as to realize to graphene film G and half
Stripping between conductor substrate 00, meanwhile, graphene film G is also caused graphene film G to obtain by the pulling force of all directions
Planarization process, further improve the planarization of heat dissipating layer.
Although the present invention is disclosed as above with preferred embodiment, the right embodiment illustrated only for the purposes of explanation and
, the present invention is not limited to, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry change and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (14)
- A kind of 1. heat dissipation film, it is characterised in that including：Graphene film, the first nano metal positioned at graphene film bottom Layer and the second nano metal layer positioned at the first nano metal layer bottom；Wherein, the air-gap accounting of the first nano metal layer is big In the air-gap accounting of the second nano metal layer.
- 2. heat dissipation film according to claim 1, it is characterised in that the upper surface of the graphene film has electrostatic charge.
- 3. heat dissipation film according to claim 1, it is characterised in that the first nano metal layer is made up of 1-dimention nano crystal grain, 1-dimention nano crystal grain is mutually bonded with the carbon atom of graphene film.
- 4. heat dissipation film according to claim 3, it is characterised in that the Qu Xiangyu graphene films of 1-dimention nano crystal grain hang down Directly.
- 5. heat dissipation film according to claim 1, it is characterised in that the thickness of the second nano metal layer is more than the first nanogold Belong to the thickness of layer.
- 6. heat dissipation film according to claim 1, it is characterised in that the crystallite dimension of the second nano metal layer is more than the The crystallite dimension of one nano metal layer.
- 7. heat dissipation film according to claim 1, it is characterised in that phase mutual connection between the crystal grain of the second nano metal layer Touch and space is not present, and the interface between crystal grain is mutually merged.
- A kind of 8. preparation method of heat dissipation film, it is characterised in that including：Step 01：One graphene film is provided, and the graphene film is transferred on the flat surfaces of semi-conductive substrate；Step 02：Planarization process is carried out to graphene film；Step 03：The nano metal layer of growth regulation one on graphene film；Step 04：The second nano metal layer is deposited on the first nano metal layer；Step 05：Graphene film with the first nano metal layer and the second nano metal layer is peeled away with Semiconductor substrate Come.
- 9. the preparation method of heat dissipation film according to claim 8, it is characterised in that in step 05, before being peeled off also Including：By graphene film upward, electrostatic charge application technique is carried out to the upper surface of graphene film exposure.
- 10. the preparation method of heat dissipation film according to claim 8, it is characterised in that thin to graphene in the step 02 Film, which carries out planarization process, to be included：A plurality of pipeline is provided with the semiconductor substrate, is connect below graphene film with a plurality of pipeline Touch, vacuumize process is carried out to a plurality of pipeline, graphene film is closely attached to semiconductor substrate surface and the processing that is flattened.
- 11. the preparation method of heat dissipation film according to claim 8, it is characterised in that also include in the step 05：To stone Black alkene film edge applies identical electric charge；Then, ring electric field, ring electric field and stone are applied to graphene film perimeter The electric charge of black alkene film edge attracts each other, and so as to produce pulling force to graphene film, planarizes graphene film.
- 12. the preparation method of heat dissipation film according to claim 8, it is characterised in that the step 03 includes：Step 031：Using plasma atom layer deposition process carries out the first nano metal on the carbon atom of graphene film The grain nucleation of layer；Step 032：Using reaction temperature is improved, continuing using plasma atom layer deposition process makes the first nano metal layer Grain nucleation is further and grows up, and turns into 1-dimention nano crystal grain.
- 13. the preparation method of heat dissipation film according to claim 8, it is characterised in that in the step 04, deposition second is received Rice metal level includes：Using plasma enhancing chemical vapor deposition method continued growth second on the first nano metal layer is received Rice metal level.
- 14. the preparation method of heat dissipation film according to claim 8, it is characterised in that the life of the second nano metal layer Long temperature is more than the growth temperature of the first nano metal layer.
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