CN107622964A - Dry etching board - Google Patents
Dry etching board Download PDFInfo
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- CN107622964A CN107622964A CN201710966357.9A CN201710966357A CN107622964A CN 107622964 A CN107622964 A CN 107622964A CN 201710966357 A CN201710966357 A CN 201710966357A CN 107622964 A CN107622964 A CN 107622964A
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- row stomata
- reaction cavity
- center
- chamber plate
- dry etching
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Abstract
A kind of dry etching board, including：Reaction cavity, the reaction cavity has bottom of chamber plate, the bottom of chamber plate includes central area and surrounds the fringe region of central area, the central area includes the first center and surrounds the second center of the first center, first center has the first row stomata through bottom of chamber plate, and fringe region has some second row stomatas through bottom of chamber plate；Mutually discrete some wafer carriers in the reaction cavity, some wafer carriers are located on the center of bottom of chamber plate second and around first row stomatas；Downtake pipe, downtake pipe is by first row stomata with being connected in the reaction cavity；Some second exhaust pipes, second exhaust pipe in the reaction cavity respectively by second row stomata with connecting；Exhaust pump, downtake pipe and second exhaust pipe are connected with the exhaust pump.Improve the stability and etching homogeneity of the cavity environment of dry etching board.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of dry etching board.
Background technology
Etching is a kind of important processing step in semiconductor fabrication process.In a broad sense, etch as by solution, reaction
A kind of general designation of material is peeled off, removed to ion or other machinery method.Etching is generally divided into dry etching and wet etching.Its
In, dry etching selection is than high, controllability, flexibility, reproducible, easily realization automation, no chemical waste fluid generation.
Dry etching is carried out in the reaction chamber of dry etching board., it is necessary to will during dry etching is carried out
Etching gas are passed through in reaction chamber, and reacting gas and the reacted accessory substance of corrosion material to be etched pass through the pipeline that is connected with chamber
Discharge.
However, the less stable of the dry etching board cavity environment of prior art, the etching homogeneity of dry etching are poor.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of dry etching board, to improve the stability of dry etching board cavity environment and quarter
Lose uniformity.
To solve the above problems, the present invention provides a kind of dry etching board, including：Reaction cavity, the reaction cavity have
Bottom of chamber plate, the bottom of chamber plate include central area and surround the fringe region of central area, and the central area is included in first
Heart district and the second center for surrounding the first center, the first center have the first row stomata through bottom of chamber plate, marginal zone
Domain has some second row stomatas through bottom of chamber plate；Mutually discrete some wafer carriers in the reaction cavity, if
Dry wafer carrier is located on the center of bottom of chamber plate second and around first row stomata；Downtake pipe, downtake pipe lead to
First row stomata is crossed with being connected in the reaction cavity；Some second exhaust pipes, second exhaust pipe pass through second row stomata respectively
Connected with the reaction cavity；Exhaust pump, downtake pipe and second exhaust pipe are connected with the exhaust pump.
Optionally, the fringe region is in annular or oval ring；The second row stomata is along the fringe region
Circumferentially it is evenly distributed.
Optionally, the quantity of the second row stomata is 2~5.
Optionally, the ratio of the aperture of the second row stomata and first row air vent aperture is 1~1.2.
Optionally, the aperture of the second row stomata is 50mm~150mm；The aperture of the first row stomata be 50mm~
150mm。
Optionally, the first exhaust hole position is in the center of the bottom of chamber plate and positioned at the center of the first center.
Optionally, second center is in annular or oval ring；Some wafer carriers are along described second
The circumference of heart district is evenly distributed.
Optionally, the quantity of some wafer carriers is identical with the quantity of some second row stomatas；The wafer carrier
On the second center between second row stomata and first row stomata.
Optionally, the exhaust pump is molecular pump or dry pump.
The present invention also provides a kind of dry etching board, including：Reaction cavity, the reaction cavity have bottom of chamber plate, the chamber
Bottom plate includes the firstth area and surrounds secondth area in the firstth area, and the firstth area has the first row stomata through bottom of chamber plate；Positioned at described
Mutually discrete some wafer carriers, some wafer carriers are located in the area of bottom of chamber plate second and are located at first exhaust in reaction cavity
Around hole；Some second row stomatas through the area of bottom of chamber plate second, and second row stomata is located at around each wafer carrier respectively；The
One blast pipe, downtake pipe is by first row stomata with being connected in the reaction cavity；Some second exhaust pipes, second exhaust
Pipe in the reaction cavity respectively by second row stomata with connecting；Exhaust pump, downtake pipe and second exhaust pipe with it is described
Exhaust pump connects.
Compared with prior art, technical scheme has advantages below：
In the dry etching board that technical solution of the present invention provides, not only have in the center of bottom of chamber plate first through bottom of chamber plate
First row stomata, also there are some second row stomatas through bottom of chamber plate in chamber bottom edge region, therefore make each wafer
There can be multiple steam vents around platform.In the dry etching board course of work, in can not only being distributed in reaction cavity
By-product gas on heart district domain is discharged in time, also can arrange the by-product gas being distributed in reaction cavity in edge region in time
Go out, avoid fringe region from accumulating more by-product gas, therefore improve the uniformity that by-product gas is distributed in reaction cavity, instead
Answer the environment of cavity relatively stable, accordingly, it is possible to increase etching homogeneity.
In the dry etching board that technical solution of the present invention provides, not only have first through bottom of chamber plate in the area of bottom of chamber plate first
Steam vent, also has some second row stomatas through bottom of chamber plate in the area of bottom of chamber plate second, and second row stomata is located at each crystalline substance respectively
Around circle microscope carrier.Therefore make there can be multiple steam vents around each wafer carrier.In the dry etching board course of work, no
The by-product gas being distributed in reaction cavity in the firstth area can only be discharged in time, can will be also distributed in reaction cavity
By-product gas in 2nd area is discharged in time, avoids the secondth area from accumulating more by-product gas, therefore is improved secondary in reaction cavity
The uniformity of aerogenesis body distribution, the environment of reaction cavity is relatively stable, accordingly, it is possible to increase etching homogeneity.
Brief description of the drawings
Fig. 1 is a kind of structural representation of dry etching board；
Fig. 2 is the structural representation of dry etching board in one embodiment of the invention；
Fig. 3 is a kind of distribution schematic diagram of first row stomata and second row stomata in the plate of bottom of chamber in Fig. 2；
Fig. 4 is another distribution schematic diagram of first row stomata and second row stomata in the plate of bottom of chamber in Fig. 2；
Fig. 5 is the structural representation of dry etching board in another embodiment of the present invention；
Fig. 6 is the distribution schematic diagram of first row stomata and second row stomata in the plate of bottom of chamber in Fig. 5.
Embodiment
As described in background, the etching performance of dry etching board of the prior art is poor.
A kind of dry etching board, with reference to figure 1, including：Reaction cavity 100, the bottom of chamber plate center of the reaction cavity 100 have
Through the steam vent 110 of bottom of chamber plate；The first mutually discrete wafer carrier 120 and second is brilliant in the reaction cavity 100
Circle microscope carrier 130, the first wafer carrier 120 and the second wafer carrier 130 are located on the bottom of chamber plate of reaction cavity 100 and are located at steam vent
Around 110；Blast pipe 140, blast pipe 140 is by steam vent 110 with being connected in the reaction cavity 100；Exhaust pump, the row
Air pump is connected with blast pipe 140.
The exhaust pump is connected by blast pipe with steam vent, for by reaction cavity in etching process caused pair
Outside aerogenesis body discharge reaction cavity.
Reaction cavity 100 is used to simultaneously perform etching two wafers.Therefore it is brilliant steam vent 110 to be generally arranged on first
Between the circle wafer carrier 130 of microscope carrier 120 and second, steam vent 110 is set to take into account secondary caused by discharge two wafers of etching
Aerogenesis body.
However, the etching performance of above-mentioned dry etching board is poor, it has been investigated that, reason is：
Because steam vent is only located at the bottom of chamber plate center of the reaction cavity, therefore close to exhaust around the first wafer carrier
The air velocity of bore region is more than the air velocity away from exhaust bore region, close to exhaust bore region around the second wafer carrier
Air velocity is more than the air velocity away from exhaust bore region.Therefore, it is close around the first wafer carrier and the second wafer carrier
The by-product gas of exhaust bore region is easily drained outside reaction cavity, and away from row around the first wafer carrier and the second wafer carrier
The by-product gas of hole area is difficult to discharge outside reaction cavity.Cause around the first wafer carrier and the second wafer carrier away from row
Hole area accumulates more by-product gas, and then makes that the stability of reaction cavity environment is poor, and etching homogeneity is poor.
On this basis, the present invention provides a kind of dry etching board, and central area includes the first center and surrounded in first
Second center of heart district, the first center have the first row stomata through bottom of chamber plate, and fringe region, which has, runs through bottom of chamber plate
Some second row stomatas；Mutually discrete some wafer carriers, some wafer carriers are located at bottom of chamber plate in reaction cavity
On second center and around first row stomata；Pass through first row stomata and the downtake pipe that is connected in reaction cavity；
Pass through second row stomata and some second exhaust pipes for being connected in reaction cavity respectively；Exhaust pump, downtake pipe and second row
Tracheae is connected with exhaust pump.Improve the stability and etching homogeneity of the cavity environment of dry etching board.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 2 is the structural representation of dry etching board in one embodiment of the invention, and dry etching board includes：
Reaction cavity 200, during there is the reaction cavity 200 bottom of chamber plate, the bottom of chamber plate to include central area A and surround
Heart district domain A fringe region B, the central area A includes the first center A1 and surrounds the first center A1 the second center
Area A2, the first center A1 have the first row stomata 210 through bottom of chamber plate, and fringe region B has through some of bottom of chamber plate
Second row stomata 220；
Mutually discrete some wafer carriers 230, some wafer carriers 230 are located at chamber in the reaction cavity 200
On the A2 of the second center of bottom plate and around first row stomata 210；
Downtake pipe 240, downtake pipe 240 is by first row stomata 210 with being connected in the reaction cavity 200；
Some second exhaust pipes 250, second exhaust pipe 250 pass through second row stomata 220 and the reaction cavity 200 respectively
Interior connection；
Exhaust pump, downtake pipe 240 and second exhaust pipe 250 are connected with the exhaust pump.
The dry etching board is used to carry out dry etch process, such as plasma dry carving technology or reactive ion etching work
Skill.
The wafer carrier 230 is used to carry wafer.There is some wafer carriers 230, benefit in the reaction cavity 200
Including：Simultaneously some wafers can be carried out with the etching of same process, improve process efficiency.
In Fig. 2 with the reaction cavity 200 have two wafer carriers 230 illustrated for example.
In the present embodiment, the fringe region is in annular or oval ring, and the second center A2 is in annular or ellipse
Annular.
In the present embodiment, circumference of some wafer carriers 230 along the second center A2 is evenly distributed, and is made brilliant in etching
During circle, circumferential distribution of the caused by-product gas along the second center A2 is more uniform in reaction cavity 200, keeps away
Exempt from reaction cavity 200 the second center A2 do not exist together caused by by-product gas concentration difference it is excessive, beneficial in time by reaction chamber
The by-product gas discharge of body 200.
In the present embodiment, the first row stomata 210 is located at the center of the bottom of chamber plate of reaction cavity 200 and positioned at first
Center A1 center.
In the present embodiment, not only there is the first row stomata 210 through bottom of chamber plate in the first center of bottom of chamber plate A1, also exist
Chamber bottom edge region B has some second row stomatas 220 through bottom of chamber plate, therefore makes around each wafer carrier 230
There can be multiple steam vents.In the dry etching board course of work, region can not only will be centrally located in reaction cavity 200
By-product gas on A is discharged in time, also can arrange the by-product gas being distributed in reaction cavity 200 on edge region B in time
Go out, avoid fringe region B from accumulating more by-product gas, thus improve by-product gas in reaction cavity 200 be distributed it is uniform
Property, the environment of reaction cavity 200 is relatively stable, accordingly, it is possible to increase etching homogeneity.
Circumference of the second row stomata 220 along the fringe region B is evenly distributed, and further increases reaction cavity
200 environmental stability and the uniformity of etching.
The quantity of the second row stomata 220 is 2~5, such as 2,3,4 or 5.In other embodiments,
The quantity of second row stomata is also an option that other numerical value.
Fig. 3 be Fig. 2 in a kind of distribution schematic diagram of first row stomata and second row stomata in the plate of bottom of chamber, second row stomata
220 quantity is 2, and circumference of the second row stomata 220 along the fringe region B is evenly distributed.
Fig. 4 be Fig. 2 in a kind of distribution schematic diagram of first row stomata and second row stomata in the plate of bottom of chamber, second row stomata
220 quantity is 4, and circumference of the second row stomata 220 along the fringe region B is evenly distributed.
In one embodiment, the quantity of some wafer carriers 230 and the quantity phase of some second row stomatas 220
Together, on the second center A2 of the wafer carrier 230 between second row stomata 220 and first row stomata 210.
The aperture of the second row stomata 220 and the ratio in the aperture of first row stomata 210 are 1~1.2, and benefit includes：Fill
Divide on the basis of utilizing fringe region B spaces, that tries one's best improves row of the second row stomata 220 to by-product gas on fringe region B
Gas ability.
In one embodiment, the aperture of the second row stomata 220 is 50mm~150mm；The first row stomata 210
Aperture be 50mm~150mm.
The exhaust pump is molecular pump or dry pump.In the present embodiment, the exhaust pump is molecular pump, and benefit includes：Can
High vacuum is provided, improves exhaust capacity.
In the present embodiment, second exhaust pipe 250 and downtake pipe 240 are both connected on exhaust pump, i.e. second exhaust pipe
250 and downtake pipe 240 share an exhaust pump, make full use of exhaust pump.And due to without being set to second row stomata 220
Multiple exhaust pumps, therefore reduce the cost of dry etching board.
In other embodiments, second exhaust pipe 250 and downtake pipe 240 are connected on different exhaust pumps, i.e., dry
Carving board, there are multiple exhaust pumps to be used to discharge the by-product gas in etching process in reaction cavity 200.
In the present embodiment, second exhaust pipe 250 and downtake pipe 240 share an exhaust pump, it is therefore desirable to original
Increase the distance between exhaust pump and the bottom of chamber plate of reaction cavity 200 on the basis of design, make second exhaust pipe 250 and first exhaust
The connection of pipe 240 and exhaust pump is relatively easy to realize.In one embodiment, between exhaust pump and the bottom of chamber plate of reaction cavity 200
Distance be 5 centimeters~10 centimeters, such as 7 centimeters or 9 centimeters.
In the present embodiment, dry etching board also includes：First air flow regulator, the first air flow regulator are arranged on first
On blast pipe 240, the first air flow regulator is used to adjust the air-flow velocity in downtake pipe 240；Second air-flow regulation dress
Put, the second air flow regulator is separately positioned on second exhaust pipe 250, and the second air flow regulator is used to adjust second exhaust
Air-flow velocity in pipe 250.Downtake pipe 240 is adjusted by the first air flow regulator and the second air flow regulator respectively
The air-flow velocity in second exhaust pipe 250 is neutralized, and then controls the distributing homogeneity of by-product gas in reaction cavity 200, can
The uniformity that by-product gas is distributed in reaction cavity is further improved, improves the uniformity of etching.
In the present embodiment, dry etching board also includes：Some radio-frequency power generating means, radio-frequency power generating means is for being
Dry etching board provides radio-frequency power；Gas panel (shower head), gas panel are arranged in reaction cavity 200
Top, there are some some through holes through gas panel in gas panel, the reacting gas for etching use passes through gas
Distribution plate enters in reaction cavity 200, and then is in plasma.
In one embodiment, wafer carrier is Electrostatic Absorption disk (ESC).
Another embodiment of the present invention also provides a kind of dry etching board, with reference to figure 5, including：
Reaction cavity 300, the reaction cavity 300 have bottom of chamber plate, and the bottom of chamber plate includes the first area N and encirclement first
Area N the second area M, the first area N have the first row stomata 310 through bottom of chamber plate；
Mutually discrete some wafer carriers 330, some wafer carriers 330 are located at chamber in the reaction cavity 300
On the secondth area of bottom plate M and around first row stomata 310；
Through the secondth area of bottom of chamber plate M some second row stomatas 320, and second row stomata 320 is located at each wafer respectively
Around platform 330；
Downtake pipe 340, downtake pipe 340 is by first row stomata 310 with being connected in the reaction cavity 300；
Some second exhaust pipes 350, second exhaust pipe 350 pass through second row stomata 320 and the reaction cavity 300 respectively
Interior connection；
Exhaust pump, downtake pipe 340 and second exhaust pipe 350 are connected with the exhaust pump.
The dry etching board is used to carry out dry etch process, such as plasma dry carving technology or reactive ion etching work
Skill.
The wafer carrier 330 is used to carry wafer.There is some wafer carriers 330, benefit in the reaction cavity 300
Including：Simultaneously some wafers can be carried out with the etching of same process, improve process efficiency.
In Fig. 5 with the reaction cavity 300 have two wafer carriers 330 illustrated for example.
In the present embodiment, the secondth area M is in annular or oval ring.
In the present embodiment, circumference of some wafer carriers 330 along the secondth area M is evenly distributed, and is made in etching wafer mistake
Cheng Zhong, circumferential distribution of the caused by-product gas along the secondth area M is more uniform in reaction cavity 300, avoids reaction chamber
Body 300 the second area M do not exist together caused by by-product gas concentration difference it is excessive, beneficial in time by the manufacture gas of reaction cavity 300
Body is discharged.
In the present embodiment, the first row stomata 310 is located at the center of the bottom of chamber plate of reaction cavity 300 and positioned at first
Area N center.
In the present embodiment, not only there is the first row stomata 310 through bottom of chamber plate in the firstth area of bottom of chamber plate N, also in bottom of chamber
The secondth area of plate M has some second row stomatas 320 through bottom of chamber plate, and second row stomata 320 is located at each wafer carrier 330 respectively
Around.Therefore make there can be multiple steam vents around each wafer carrier 330.In the dry etching board course of work, not only
The by-product gas being distributed in reaction cavity 300 on first area N can be discharged in time, also can be by reaction cavity 300 points
By-product gas of the cloth on the second area M is discharged in time, avoids the second area M from accumulating more by-product gas, therefore improve reaction
The uniformity that by-product gas is distributed in cavity 300, the environment of reaction cavity 300 is relatively stable, accordingly, it is possible to increase etching is equal
Even property.
In one embodiment, for each wafer carrier 330, the second row stomata 320 and around wafer carrier 330
One steam vent 310 is evenly distributed along around each wafer carrier 330, further increases the ambient stable of reaction cavity 200
Property and etching uniformity.
Fig. 6 be Fig. 5 in a kind of distribution schematic diagram of first row stomata and second row stomata in the plate of bottom of chamber, each wafer
The surrounding of platform 330 is distributed 3 second row stomatas 320, second row stomata 320 and the edge of first row stomata 310 around wafer carrier 330
And be evenly distributed around each wafer carrier 330.
In other embodiments, each surrounding of wafer carrier 330 is distributed the second row stomata 320 of other numerical value.
The exhaust pump refers to the exhaust pump in previous embodiment.
The connection of downtake pipe 340 and exhaust pump, the connected mode of second exhaust pipe 350 and exhaust pump are with reference to foregoing reality
Example is applied, is no longer described in detail.
In the present embodiment, dry etching board also includes：First air flow regulator, the first air flow regulator are arranged on first
On blast pipe 340, the first air flow regulator is used to adjust the air-flow velocity in downtake pipe 340；Second air-flow regulation dress
Put, the second air flow regulator is separately positioned on second exhaust pipe 350, and the second air flow regulator is used to adjust second exhaust
Air-flow velocity in pipe 350.Downtake pipe 340 is adjusted by the first air flow regulator and the second air flow regulator respectively
The air-flow velocity in second exhaust pipe 350 is neutralized, and then controls the distributing homogeneity of by-product gas in reaction cavity 300, can
The uniformity that by-product gas is distributed in reaction cavity is further improved, improves the uniformity of etching.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (10)
- A kind of 1. dry etching board, it is characterised in that including：Reaction cavity, the reaction cavity have bottom of chamber plate, and the bottom of chamber plate includes central area and surrounds the side of central area Edge region, the central area include the first center and surround the second center of the first center, and the first center has Through the first row stomata of bottom of chamber plate, fringe region has some second row stomatas through bottom of chamber plate；Mutually discrete some wafer carriers, some wafer carriers are located at the center of bottom of chamber plate second in the reaction cavity Above and around first row stomata；Downtake pipe, downtake pipe is by first row stomata with being connected in the reaction cavity；Some second exhaust pipes, second exhaust pipe in the reaction cavity respectively by second row stomata with connecting；Exhaust pump, downtake pipe and second exhaust pipe are connected with the exhaust pump.
- 2. dry etching board according to claim 1, it is characterised in that the fringe region is in annular or oval ring； Circumference of the second row stomata along the fringe region is evenly distributed.
- 3. dry etching board according to claim 1, it is characterised in that the quantity of the second row stomata is 2~5.
- 4. dry etching board according to claim 1, it is characterised in that the aperture of the second row stomata and first row stomata The ratio in aperture is 1~1.2.
- 5. dry etching board according to claim 4, it is characterised in that the aperture of the second row stomata be 50mm~ 150mm；The aperture of the first row stomata is 50mm~150mm.
- 6. dry etching board according to claim 1, it is characterised in that the first exhaust hole position is in the bottom of chamber plate The heart and the center for being located at the first center.
- 7. dry etching board according to claim 1, it is characterised in that second center is in annular or elliptical ring Shape；Circumference of some wafer carriers along second center is evenly distributed.
- 8. dry etching board according to claim 7, it is characterised in that the quantity of some wafer carriers and some second The quantity of steam vent is identical；The wafer carrier is on the second center between second row stomata and first row stomata.
- 9. dry etching board according to claim 1, it is characterised in that the exhaust pump is molecular pump or dry pump.
- A kind of 10. dry etching board, it is characterised in that including：Reaction cavity, the reaction cavity have bottom of chamber plate, and the bottom of chamber plate includes the firstth area and surrounds secondth area in the firstth area, Firstth area has the first row stomata through bottom of chamber plate；Mutual discrete some wafer carriers in the reaction cavity, some wafer carriers be located in the area of bottom of chamber plate second and Around first row stomata；Some second row stomatas through the area of bottom of chamber plate second, and second row stomata is located at around each wafer carrier respectively；Downtake pipe, downtake pipe is by first row stomata with being connected in the reaction cavity；Some second exhaust pipes, second exhaust pipe in the reaction cavity respectively by second row stomata with connecting；Exhaust pump, downtake pipe and second exhaust pipe are connected with the exhaust pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710966357.9A CN107622964A (en) | 2017-10-17 | 2017-10-17 | Dry etching board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710966357.9A CN107622964A (en) | 2017-10-17 | 2017-10-17 | Dry etching board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107622964A true CN107622964A (en) | 2018-01-23 |
Family
ID=61092583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710966357.9A Pending CN107622964A (en) | 2017-10-17 | 2017-10-17 | Dry etching board |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010023741A1 (en) * | 1998-03-31 | 2001-09-27 | Collison Wenli Z. | Inductively coupled plasma downstream strip module |
| CN201549485U (en) * | 2009-10-23 | 2010-08-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer stage and reaction chamber for integrated circuit processing equipment |
| CN105742211A (en) * | 2014-12-26 | 2016-07-06 | 东京毅力科创株式会社 | Substrate processing apparatus |
| CN106282969A (en) * | 2015-06-02 | 2017-01-04 | 中微半导体设备(上海)有限公司 | Chemical vapor deposition unit and deposition process thereof |
-
2017
- 2017-10-17 CN CN201710966357.9A patent/CN107622964A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010023741A1 (en) * | 1998-03-31 | 2001-09-27 | Collison Wenli Z. | Inductively coupled plasma downstream strip module |
| CN201549485U (en) * | 2009-10-23 | 2010-08-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer stage and reaction chamber for integrated circuit processing equipment |
| CN105742211A (en) * | 2014-12-26 | 2016-07-06 | 东京毅力科创株式会社 | Substrate processing apparatus |
| CN106282969A (en) * | 2015-06-02 | 2017-01-04 | 中微半导体设备(上海)有限公司 | Chemical vapor deposition unit and deposition process thereof |
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