CN107621317A - A kind of surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane and preparation method thereof - Google Patents
A kind of surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane and preparation method thereof Download PDFInfo
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- 239000012528 membrane Substances 0.000 title claims abstract description 79
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title abstract description 11
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- 238000009530 blood pressure measurement Methods 0.000 claims abstract description 11
- 238000001514 detection method Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 89
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
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- 238000000926 separation method Methods 0.000 claims description 9
- 125000004122 cyclic group Chemical group 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
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- 239000010408 film Substances 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
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Abstract
The present invention proposes a kind of surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane and preparation method thereof, the surface acoustic wave chip of high-temp pressure sensor includes soi chip substrate, formed with pressure sensitive layer in soi chip substrate, formed with piezoelectric membrane on pressure sensitive layer, formed with interdigital transducer and reflecting grating on piezoelectric membrane；The chamber of reference pressure is provided when extending to pressure sensitive layer formed with detection pressure from soi chip substrate bottom surface in soi chip substrate.The surface acoustic wave chip of high-temp pressure sensor small volume of the present invention, wireless receiving and dispatching can be realized by being operated in radio band, and metering system is flexible, thus has very big application potential in high temperature pressure measurement field.
Description
Technical field
The invention belongs to semiconductor design and manufacturing technology field, it is related to MEMS sensor, and in particular to one kind is based on SOI
With the surface acoustic wave chip of high-temp pressure sensor of piezoelectric membrane and preparation method thereof.
Background technology
Pressure measxurement under hot environment is one of the emphasis of observation and control technology, difficult point.In Aero-Space, defence and military, stone
The fields such as oiling work, auto industry, it is often necessary to carry out the measurement and control of pressure, high performance high-temperature high-pressure in high temperature environments
Force snesor is one of Primary Component in above-mentioned field.
Now widely used silicon piezoresistance type pressure sensor, strain bridge and strain films, its technique are isolated using P-N junction
Ripe and excellent performance, but P-N junction electric leakage increased dramatically as temperature raises, when temperature is more than 120 DEG C, sensor
Performance meeting severe exacerbation even fails, in addition, plastic deformation and current leakage can occur at 600 DEG C for silicon, causes signal transacting
System and the imbalance of the extreme of circuit.It is quite ripe as the surface acoustic wave pressure sensor technology of substrate using quartz, but its work
Make temperature and be generally -20 DEG C -100 DEG C, should not be used in the environment of higher than 200 DEG C.
Chinese patent CN 1514219 provides a kind of Solid state pressure blocking type high tempperature resistance pressure sensor, realize 200 DEG C with
The temperature survey of upper adverse circumstances, but this sensor still needs to power supply power supply, it is necessary to wire transmission signal, it is difficult to competent 500 DEG C with
Upper high temperature requirement.Chinese patent CN101775657 has been related to LGS high temperature application zero-temperature compensating cut type, but does not have
Body acupuncture does deep work to this crystal in terms of sensor.
The content of the invention
Present invention seek to address that technical problem present in prior art, especially innovatively propose it is a kind of based on SOI and
Surface acoustic wave chip of high-temp pressure sensor of piezoelectric membrane and preparation method thereof.
In order to realize the above-mentioned purpose of the present invention, according to the first aspect of the invention, the invention provides one kind to be based on
SOI and piezoelectric membrane surface acoustic wave chip of high-temp pressure sensor, it includes soi chip substrate, in the soi chip substrate
Silicon dioxide layer and device layer thereon collectively form SOI pressure sensitive layers, formed with piezoelectricity on the SOI pressure sensitive layers
Film, formed with interdigital transducer and reflecting grating on the piezoelectric membrane；From soi chip substrate in soi chip substrate
Bottom surface provides the chamber of reference pressure when extending to pressure sensitive layer formed with detection pressure.Under the soi chip substrate
Can have the second chip base, in soi chip substrate from the second chip base extend to pressure sensitive layer between formed with
High vacuum seal chamber.
The surface acoustic wave chip of high-temp pressure sensor small volume of the present invention, wireless receiving and dispatching can be realized by being operated in radio band,
Metering system is flexible, thus has very big application potential in high temperature pressure measurement field.
In the preferred embodiment of the present invention, prepare to form soi chip substrate and pressure sensitive layer using SOI,
The resistivity of SOI device layer >=5k Ω.The sensor chip high-temperature behavior of preparation is good, ensures chip quality；With SOI processing work
Skill is ripe, high yield rate.
In another preferred embodiment of the present invention, the piezoelectric membrane is pure AlN pressure of the crystal grain in c-axis orientation
Conductive film or the AlN piezoelectric membranes for adulterating 10at%-43at% scandium elements, ensure Detection results during high temperature.
In another preferred embodiment of the present invention, interdigital transducer and reflecting grating are above piezoelectric membrane in parallel
Set, the interdigital transducer and reflection grid material are same material.
In another preferred embodiment of the present invention, the material of the interdigital transducer and reflecting grating is aluminium, gold,
Molybdenum, platinum, iridium or its alloy, disclosure satisfy that the requirement of various temperature sensor.
Such as in 200 DEG C of aluminium chosen below；In 600 DEG C of gold chosen below；In 800 DEG C of molybdenums chosen below；1000 DEG C with
Lower selection platinum；In 1200 DEG C of iridium chosen below.
In another preferred embodiment of the present invention, formed with bottom electricity between pressure sensitive layer and piezoelectric membrane
Pole, the hearth electrode can draw and be grounded, and can also be not brought up.
In another preferred embodiment of the present invention, it can be tiled above pressure sensitive layer formed with silica
Layer, or the periodicity formed with silica stereochemical structure Yu polysilicon stereochemical structure cross-distribution above pressure sensitive layer
Pressure measurement error caused by the change of environment temperature is offset in arrays tile layer, compensation.
In order to realize the above-mentioned purpose of the present invention, according to the second aspect of the invention, the invention provides one kind to prepare
The method of surface acoustic wave chip of high-temp pressure sensor, it comprises the following steps：
S1, there is provided SOI, resistivity >=5k Ω of the SOI device layer；
S2, piezoelectric membrane is formed in the deposit of SOI fronts；
S3, deposited on the piezoelectric membrane and form interdigital transducer and reflecting grating；
S4, deposit form insulating protective layer；
S5, photoetching, etch insulating protective layer and piezoelectric thin film layer, windowing；
S6, conductive metal layer is deposited, photoetching, etching, signal is formed and draws disk；
S7, photoetching, in the SOI back-etchings, until SOI separation layer exposes to form pressure sensitive layer；
With or without step S8, the SOI back sides and the second chip base are bonded together to form into high vacuum seal chamber.
The preparation method of the present invention is simple in construction, its surface acoustic wave chip of high-temp pressure sensor small volume formed, its
Piezoelectric property makes it, and wireless receiving and dispatching can be realized by being operated in radio band, and metering system is flexible without external power supply, thus in high-temperature high-pressure
Power fields of measurement has very big application potential.
In another preferred embodiment of the present invention, the step S2 is：Bottom electricity is formed in the deposit of SOI fronts
Pole, then deposit forms piezoelectric membrane on the hearth electrode；
Or step S2 is：Silica tiling layer is formed in the deposit of SOI fronts or deposit forms silica
The cyclic array tiling layer of stereochemical structure and polysilicon stereochemical structure cross-distribution, then deposits shape on the tiling layer
Into piezoelectric membrane；
Or step S2 is：Silica tiling layer is formed in the deposit of SOI fronts or deposit forms silica
The cyclic array tiling layer of stereochemical structure and polysilicon stereochemical structure cross-distribution, then deposit forms hearth electrode, described
Deposit forms piezoelectric membrane on hearth electrode.
In the preferred embodiment of the present invention, it is a kind of to utilize the surface acoustic wave high temperature based on SOI and piezoelectric membrane
The application structure of pressure sensor chip, it uses one of following structure：
Structure one：Simultaneously counteracting environment is compensated using the two-channel compensation mode of two resonators or two delay line forms
Pressure measurement error caused by the change of temperature, described two resonators or two delay lines are because position is different or structural parameters are different
And there is different temperature sensitivity energy and/or pressure-sensitivity characteristic；
Structure two：As two or more the sound wave modal sensitive to temperature and pressure in the chip be present, together
When using two kinds of sound wave modal signal compensation modes compensate offset environment temperature change caused by pressure measurement error, described two sound
Ripple mode has different temperature sensitivity energy and/or pressure-sensitivity characteristic.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination accompanying drawings below to embodiment
Substantially and it is readily appreciated that, wherein：
Fig. 1 is the surface acoustic wave high-temp pressure sensor based on SOI and piezoelectric membrane in a kind of preferred embodiment of the present invention
The preparation flow figure of differential pressure type chip, wherein, Fig. 1-1 is SOI schematic diagram；Fig. 1-2 is thin to form piezoelectricity in the deposit of SOI fronts
The schematic diagram of film；Fig. 1-3 is the schematic diagram that deposit forms interdigital transducer and reflecting grating on piezoelectric membrane；Fig. 1-4 is to form sediment
Product forms the schematic diagram of insulating protective layer；Fig. 1-5 is schematic diagram of the windowing to hearth electrode；Fig. 1-6 is that windowing changes to interdigital
The schematic diagram of energy device；Fig. 1-7 is the schematic diagram of deposit conductive metal layer；Fig. 1-8 is in SOI back-etchings until SOI isolation
Layer exposure forms the schematic diagram of pressure sensitive layer；
Fig. 2 is the surface acoustic wave high-temp pressure sensor based on SOI and piezoelectric membrane in a kind of preferred embodiment of the present invention
The preparation flow figure of absolute pressure formula chip, wherein, Fig. 2-1 is the schematic diagram for providing SOI；Fig. 2-2 is to form pressure in the deposit of SOI fronts
The schematic diagram of conductive film；Fig. 2-3 is the schematic diagram that deposit forms interdigital transducer and reflecting grating on piezoelectric membrane；Fig. 2-4
The schematic diagram of insulating protective layer is formed for deposit；Fig. 2-5 is schematic diagram of the windowing to hearth electrode；Fig. 2-6 is that windowing is extremely pitched
The schematic diagram of finger transducer；Fig. 2-7 is the schematic diagram of deposit conductive metal layer；Fig. 2-8 is in SOI back-etchings until SOI
Separation layer exposes the schematic diagram to form pressure sensitive layer；Fig. 2-9 is that the SOI back sides and the second chip base are bonded together to form into high vacuum
The schematic diagram of sealed chamber；
Fig. 3 is to be sensed in another preferred embodiment of the present invention based on the surface acoustic wave high temperature pressure of SOI and piezoelectric membrane
The preparation flow figure of device absolute pressure formula chip (is with Fig. 2 differences：The manufacture craft of high vacuum seal chamber no longer uses
Silicon-glass anodic bonding technique, but use silicon-silicon bond to close technique), wherein, Fig. 3-1 is the schematic diagram for providing SOI；Fig. 3-2
To form the schematic diagram of piezoelectric membrane in the deposit of SOI fronts；Fig. 3-3 be on piezoelectric membrane deposit formed interdigital transducer and
The schematic diagram of reflecting grating；Fig. 3-4 is the schematic diagram that deposit forms insulating protective layer；Fig. 3-5 is signal of the windowing to hearth electrode
Figure；Fig. 3-6 is schematic diagram of the windowing to interdigital transducer；Fig. 3-7 is the schematic diagram of deposit conductive metal layer；Fig. 3-8 be
SOI back-etchings are until SOI separation layer exposes the schematic diagram to form pressure sensitive layer；Fig. 3-9 is by the SOI back sides and silicon substrate
Bottom bonds together to form the schematic diagram of high vacuum seal chamber；
Fig. 4 (a) be in another preferred embodiment of the present invention sensor chip without the structural representation of hearth electrode；Fig. 4
(b) it is structural representation of the sensor chip with hearth electrode in another preferred embodiment of the present invention；
Fig. 5 is to add the three-dimensional knot of certain thickness silica in a kind of preferred embodiment of the present invention in sensor chip
Structure and the cyclic array tiling layer schematic diagram of polysilicon stereochemical structure cross-distribution；
Fig. 6 is to compensate counteracting using the two-channel compensation mode of two resonator forms in a kind of preferred embodiment of the present invention
Pressure measurement error schematic diagram caused by the change of environment temperature, wherein, Fig. 6 (a) is that the change of response signal only reflects environment temperature
The resonator structure schematic diagram of change, Fig. 6 (b) are change reflection variation of ambient temperature and the testing pressure change of response signal
The resonator structure schematic diagram of double action.
Reference：
1 SOI substrate layer；2 SOI separation layers；3 SOI device layers；4 hearth electrodes；
5 piezoelectric layers；6 silicon dioxide insulator protective layers；7 interdigital transducers；8 interdigital transducers；
9 interdigital transducers；10 signals draw disk.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the invention, it is to be understood that term " longitudinal direction ", " transverse direction ", " on ", " under ", "front", "rear",
The orientation or position relationship of the instruction such as "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer " is based on accompanying drawing institutes
The orientation or position relationship shown, it is for only for ease of the description present invention and simplifies description, rather than instruction or the dress for implying meaning
Put or element there must be specific orientation, with specific azimuth configuration and operation, therefore it is not intended that to limit of the invention
System.
In the description of the invention, unless otherwise prescribed with limit, it is necessary to explanation, term " installation ", " connected ",
" connection " should be interpreted broadly, for example, it may be mechanical connection or electrical connection or the connection of two element internals, can
To be to be joined directly together, can also be indirectly connected by intermediary, for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term.
Fig. 4 (a) is the sectional view of the surface acoustic wave chip of high-temp pressure sensor of the first preferred embodiment of the invention, is schemed
In be only signal the size for giving each region, specific size can be designed according to the requirement of device parameters.
From Fig. 4 (a), surface acoustic wave chip of high-temp pressure sensor includes：Soi chip substrate, soi chip base
Formed with pressure sensitive layer on bottom, in the present embodiment, using SOI (Silicon On Insulator, silicon-on-insulator)
Preparation forms pressure sensitive layer, resistivity >=5k Ω of SOI device layer.Separation layer 2 (silica) and device thereon in SOI
Part layer 3 is collectively forming SOI pressure sensitive layers, and the basalis 1 under SOI separation layers is soi chip substrate, in soi chip substrate
It is interior to extend to pressure sensitive layer formed with the chamber that reference pressure is provided when detecting pressure from soi chip substrate bottom surface.
Formed with piezoelectric membrane on pressure sensitive layer, in the present embodiment, piezoelectric membrane is crystal grain in c axles orientation
Pure AlN piezoelectric layers 5 or the AlN piezoelectric membranes 5 for adulterating 10at%-43at% scandium elements.Formed with interdigital on piezoelectric membrane
Transducer 7,8,9 and reflecting grating.Interdigital transducer 7,8,9 and reflecting grating are set in parallel above piezoelectric membrane, described interdigital
Transducer and reflection grid material are same material.Preferably the material of interdigital transducer and reflecting grating is aluminium, gold, molybdenum, platinum, iridium
Or its alloy.
In the present embodiment, interdigital transducer and reflecting grating can form surface acoustic wave one-port resonator, surface acoustic wave
Both-end resonator or SAW delay line.Specifically, the structure of surface acoustic wave one-port resonator is put between two reflecting gratings
Put an interdigital transducer, the structure of surface acoustic wave both-end resonator placed between two reflecting gratings two interdigital transducers or
Two reflecting gratings are placed between two interdigital transducers, the structure of SAW delay line is in for two or more interdigital transducers
It is arranged in parallel.
In the present embodiment, extended in soi chip substrate from substrate bottom surface between pressure sensitive layer formed with inspection
The chamber of reference pressure is provided during measuring pressure, is open architecture in differential-pressure configuration middle chamber as shown in figures 1-8, is not sealing
Chamber.It is the second chip base under soi chip substrate, in soi chip substrate in the other preferred embodiment of the present invention
It is interior from the second chip base extend to pressure sensitive layer between formed with detection pressure when provide reference pressure high vacuum seal
Chamber, it is high vacuum seal chamber in absolute pressure structure middle chamber as shown in figs. 2-9.
The invention provides a kind of side for preparing the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane
Method, differential pressure type structure as shown in figures 1-8, it comprises the following steps：
S1, as Figure 1-1, there is provided SOI, resistivity >=5k Ω of the SOI device layer.
S2, as shown in Figure 1-2, piezoelectric membrane, in the present embodiment, piezoelectric membrane are formed in the deposit of SOI fronts
It is that crystal grain is in the pure AlN piezoelectric membranes of c-axis orientation or the AlN piezoelectric membranes for adulterating 10at%-43at% scandium elements.
S3, as Figure 1-3, deposited on piezoelectric membrane and form interdigital transducer and reflecting grating, the knot eventually formed
Shown in structure such as Fig. 4 (a).
In the other preferred embodiment of the present invention, as shown in Figure 1-2, step S2 is to form bottom in the deposit of SOI fronts
Electrode, the material of specific hearth electrode is preferably Ti/Pt materials, is deposited on the hearth electrode and forms piezoelectric membrane；Such as Fig. 1-3
It is shown, deposited on piezoelectric membrane and form interdigital transducer and reflecting grating, shown in the structure eventually formed such as Fig. 4 (b).It is interdigital
The material of transducer and reflecting grating is aluminium, gold, molybdenum, platinum, iridium or its alloy, in the present embodiment, interdigital transducer and reflection
The material of grid is preferably molybdenum.
S4, as Figure 1-4, deposit form insulating protective layer 6, and specific material is preferably silica.
S5, as shown in Fig. 1-5 and 1-6, photoetching, etch insulating protective layer and piezoelectric thin film layer；In the present embodiment, scheme
1-5 is windowing to hearth electrode, and Fig. 1-6 is windowing to interdigital transducer.
S6, as shown in figs. 1-7, conductive metal layer is deposited, photoetching, etching, signal is formed and draws disk 10, draw the material of disk
It is preferably gold for metal.
S7, photoetching, as shown in figures 1-8, in the SOI back-etchings, until SOI separation layer exposes to form presser sensor
Layer.
Fig. 2-1 to Fig. 2-9 is the surface acoustic wave high-temperature high-pressure based on SOI and piezoelectric membrane in a kind of preferred embodiment of the present invention
Force snesor absolute pressure formula chip flow chart, it comprises the following steps：
S1, as shown in Fig. 2-1, there is provided SOI, resistivity >=5k Ω of the SOI device layer.
S2, as shown in Fig. 2-2, piezoelectric membrane, in the present embodiment, piezoelectric membrane are formed in the deposit of SOI fronts
It is that crystal grain is in the pure AlN piezoelectric membranes of c-axis orientation or the AlN piezoelectric membranes for adulterating 10at%-43at% scandium elements.
S3, as Figure 2-3, deposited on piezoelectric membrane and form interdigital transducer and reflecting grating；In the present invention in addition
Preferred embodiment in, as shown in Fig. 2-2, step S2 be SOI front deposit form hearth electrode, the material of specific hearth electrode
Preferably Ti/Pt materials, deposited on the hearth electrode and form piezoelectric membrane；As Figure 1-3, formed sediment on piezoelectric membrane
Product forms interdigital transducer and reflecting grating, and the material of interdigital transducer and reflecting grating is aluminium, gold, molybdenum, platinum, iridium or its alloy,
In present embodiment, the material of interdigital transducer and reflecting grating is preferably molybdenum.
S4, as in Figure 2-4, deposit form insulating protective layer, and specific material is preferably silica.
S5, as shown in Fig. 2-5 and 2-6, photoetching, etch insulating protective layer and piezoelectric thin film layer；In the present embodiment, scheme
2-5 is windowing to hearth electrode, and Fig. 2-6 is windowing to interdigital transducer.
S6, as illustrated in figs. 2-7, conductive metal layer is deposited, photoetching, etching, signal is formed and draws disk, the material for drawing disk is
Metal, it is preferably gold.
S7, as illustrated in figs. 2 through 8, photoetching, in the SOI back-etchings, until SOI separation layer exposes to form presser sensor
Layer.
S8, as shown in figs. 2-9, the SOI back sides and the second chip base are bonded together to form into high vacuum seal chamber.In this implementation
In mode, the second chip base used is glass.In the present embodiment, it is bonded under conditions of vacuumizing, specifically
The vacuum level of use can determine according to specific experiment, preferably high vacuum.
Fig. 3-1 to Fig. 3-9 is the surface acoustic wave high temperature based on SOI and piezoelectric membrane in another preferred embodiment of the present invention
Pressure sensor absolute pressure formula chip flow chart, is with Fig. 2-9 differences：The manufacture craft of high vacuum seal chamber is no longer adopted
With silicon-glass anodic bonding technique, but silicon-silicon bond is used to close technique, as shown in figs. 3-9.
As shown in figure 5, first depositing to form silica tiling layer in SOI fronts, or formation two is first deposited in SOI fronts
The cyclic array tiling layer of silica stereochemical structure and polysilicon stereochemical structure cross-distribution, re-forms other structures.Example
As deposited to form hearth electrode and piezoelectric membrane again, deposited on the piezoelectric membrane and form interdigital transducer and reflecting grating.
In the present embodiment, interdigital transducer and reflecting grating can form surface acoustic wave one-port resonator, surface acoustic wave
Both-end resonator or SAW delay line.
Fig. 6 (a) and Fig. 6 (b) is using the two-channel compensation of two resonator forms in a kind of preferred embodiment of the present invention
Mode compensates pressure measurement error schematic diagram caused by the change for offsetting environment temperature.In the present embodiment, it is possible to use two are prolonged
The two-channel compensation mode of slow line form compensates pressure measurement error caused by the change for offsetting environment temperature.Due to structural parameters not
Together, the change of the resonator response signal in Fig. 6 (a) only reflects variation of ambient temperature, the resonator response signal in Fig. 6 (b)
Change then reflect variation of ambient temperature and testing pressure change double action.
, also can be simultaneously if two or more the sound wave modal sensitive to temperature and pressure in the chip be present
Pressure measurement error caused by the change for offsetting environment temperature is compensated using two kinds of sound wave modal signal compensation modes, described two sound waves
Mode has different temperature sensitivity energy and (or) pressure-sensitivity characteristic.
The surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane of the present invention can be realized under hot environment
Pressure measxurement.In the present embodiment, piezoelectric membrane deposits formation by magnetron sputtering technique on pressure sensitive layer, interdigital
Transducer and reflecting grating are made by MEMS technology on piezoelectric membrane, and sensor chip utilizes piezo-electric effect and inverse piezoelectric effect
Carry out exciting and receiving for surface acoustic wave.Interdigital transducer in piezoelectric membrane surface excitation SAW, the surface acoustic wave to
Propagate at the reflecting grating of both sides, returned after propagating to the position of reflecting grating by reflection.The surface acoustic wave being reflected back is further through interdigital
Transducer is re-converted into electromagnetic wave signal, i.e. response signal.When testing pressure is acted on piezoelectric membrane and pressure sensitive layer,
The composite membrane is caused to deform upon, the speed of acoustic surface wave propagation changes, and then response signal changes, the electromagnetic wave
Response signal passes through specific signal processing analysis, realizes pressure measxurement.The sensor chip can make differential-pressure configuration, also may be used
To make absolute pressure structure by vacuum sealing bonding technology.The simple in construction, small volume of the present invention, in light weight, precision is high, Ke Yiying
Measurement for pressure parameter under the hot environments such as Aero-Space, petrochemical industry, nuclear industry.
It should be noted that it is material explanation that following small square frame is schemed in Figure of description.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the feature for combining the embodiment or example description
It is contained at least one embodiment or example of the present invention.In this manual, the schematic representation of above-mentioned term is differed
Surely identical embodiment or example are referred to.Moreover, specific features, structure, material or the feature of description can be any
Combined in an appropriate manner in one or more embodiments or example.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that：Not
In the case of departing from the principle and objective of the present invention a variety of change, modification, replacement and modification can be carried out to these embodiments, this
The scope of invention is limited by claim and its equivalent.
Claims (10)
- A kind of 1. surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane, it is characterised in that including：It is quick that soi chip substrate, the silicon dioxide layer in the soi chip substrate and device layer thereon collectively form SOI pressure Layer is felt, formed with piezoelectric membrane on the SOI pressure sensitive layers, formed with interdigital transducer and anti-on the piezoelectric membrane Penetrate grid；Reference is provided when extending to pressure sensitive layer formed with detection pressure from soi chip substrate bottom surface in soi chip substrate The chamber of pressure.
- 2. the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane, its feature exist as claimed in claim 1 In resistivity >=5k Ω of SOI device layer；And/or the piezoelectric membrane is pure AlN piezoelectric membrane or doping 10at%-43at% scandium element of the crystal grain in c-axis orientation AlN piezoelectric membranes.
- 3. the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane, its feature exist as claimed in claim 1 In interdigital transducer and reflecting grating are set in parallel above piezoelectric membrane, and the interdigital transducer and reflection grid material are same A kind of material.
- 4. the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane as described in claim 1 or 3, it is special Sign is that the material of the interdigital transducer and reflecting grating is aluminium, gold, molybdenum, platinum, iridium or its alloy.
- 5. the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane, its feature exist as claimed in claim 1 In being the second chip base under the soi chip substrate, pressure extended to from the second chip base in soi chip substrate Formed with high vacuum seal chamber between sensitive layer.
- 6. the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane, its feature exist as claimed in claim 1 In can draw and be grounded, can also be not brought up formed with hearth electrode, the hearth electrode between pressure sensitive layer and piezoelectric membrane.
- 7. the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane as described in claim 1 or 6, it is special Sign is, formed with silica tiling layer between pressure sensitive layer and hearth electrode, or in pressure sensitive layer and hearth electrode Between the cyclic array formed with silica stereochemical structure and polysilicon stereochemical structure cross-distribution tile layer；Or pressing Formed with silica tiling layer between power sensitive layer and piezoelectric membrane, or formed between pressure sensitive layer and piezoelectric membrane There is the cyclic array tiling layer of silica stereochemical structure and polysilicon stereochemical structure cross-distribution.
- A kind of 8. method for preparing the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane, it is characterised in that Comprise the following steps：S1, there is provided SOI, resistivity >=5k Ω of SOI device layer；S2, piezoelectric membrane is formed in the deposit of SOI fronts；S3, deposited on the piezoelectric membrane and form interdigital transducer and reflecting grating；S4, deposit form insulating protective layer；S5, photoetching, etch insulating protective layer and piezoelectric thin film layer, windowing；S6, conductive metal layer is deposited, photoetching, etching, signal is formed and draws disk；S7, photoetching, in the SOI back-etchings, until the separation layer on SOI exposes to form pressure sensitive layer；With or without step S8, the SOI back sides and the second chip base are bonded together to form into high vacuum seal chamber.
- 9. the side of the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane is prepared as claimed in claim 8 Method, it is characterised in that the step S2 is：Hearth electrode is formed in the deposit of SOI fronts, is then formed sediment on the hearth electrode Product forms piezoelectric membrane；Or step S2 is：Silica tiling layer is formed in the deposit of SOI fronts or deposit forms silica solid The cyclic array tiling layer of structure and polysilicon stereochemical structure cross-distribution, then deposit forms pressure on the tiling layer Conductive film；Or step S2 is：Silica tiling layer is formed in the deposit of SOI fronts or deposit forms silica solid The cyclic array tiling layer of structure and polysilicon stereochemical structure cross-distribution, then deposit forms hearth electrode, in bottom electricity Deposit forms piezoelectric membrane on pole.
- A kind of 10. application knot of the surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane described in claim 1 Structure, it is characterised in that using one of following structure：Structure one：Simultaneously counteracting environment temperature is compensated using the two-channel compensation mode of two resonators or two delay line forms Change caused by pressure measurement error, described two resonators or two delay lines have because position is different or structural parameters are different There are different temperature sensitivity energy and/or pressure-sensitivity characteristic；Structure two：As two or more the sound wave modal sensitive to temperature and pressure in the chip be present, make simultaneously Pressure measurement error caused by compensating the change for offsetting environment temperature with two kinds of sound wave modal signal compensation modes, described two sound wave moulds State has different temperature sensitivity energy and/or pressure-sensitivity characteristic.
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| CN108318218A (en) * | 2018-05-14 | 2018-07-24 | 中国空气动力研究与发展中心低速空气动力研究所 | A kind of flexible thin film type multi-measuring point pressure measurement band for low-speed wind tunnel |
| CN108871627A (en) * | 2018-07-16 | 2018-11-23 | 重庆大学 | A kind of difference double resonance type acoustic wave pressure sensor |
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| CN111650447A (en) * | 2020-04-24 | 2020-09-11 | 中国人民解放军陆军工程大学 | Surface acoustic wave solid-state electric field sensor |
| CN112697262A (en) * | 2020-12-08 | 2021-04-23 | 联合微电子中心有限责任公司 | Hydrophone and method for manufacturing same |
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| CN108871627A (en) * | 2018-07-16 | 2018-11-23 | 重庆大学 | A kind of difference double resonance type acoustic wave pressure sensor |
| CN108871627B (en) * | 2018-07-16 | 2024-07-23 | 重庆大学 | Differential double-resonator type acoustic wave pressure sensor |
| CN109238525A (en) * | 2018-08-28 | 2019-01-18 | 西安航天动力研究所 | Metallic film type pressure-temperature compound sensor and preparation method thereof |
| CN110277486A (en) * | 2019-07-05 | 2019-09-24 | 重庆大学 | A kind of high temperature SAW device chip and preparation method thereof using array hole extraction electrode |
| CN110277486B (en) * | 2019-07-05 | 2024-03-12 | 重庆大学 | High-temperature surface acoustic wave device chip adopting array hole extraction electrode and manufacturing method thereof |
| CN110642221A (en) * | 2019-09-18 | 2020-01-03 | 西安交通大学 | Piezoelectric MEMS structure hydrophilic silicon-silicon direct bonding process |
| CN110642221B (en) * | 2019-09-18 | 2022-08-05 | 西安交通大学 | Piezoelectric MEMS structure hydrophilic silicon-silicon direct bonding process |
| CN111337166A (en) * | 2020-03-25 | 2020-06-26 | 电子科技大学 | Preparation method of novel absolute pressure surface acoustic wave pressure sensor |
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| CN112697262B (en) * | 2020-12-08 | 2023-06-27 | 联合微电子中心有限责任公司 | Hydrophone and method for manufacturing same |
| CN112697262A (en) * | 2020-12-08 | 2021-04-23 | 联合微电子中心有限责任公司 | Hydrophone and method for manufacturing same |
| CN113418585A (en) * | 2021-06-07 | 2021-09-21 | 武汉敏声新技术有限公司 | SAW weighing sensor |
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