CN107611772A - Electroabsorption modulated laser and preparation method thereof - Google Patents
Electroabsorption modulated laser and preparation method thereof Download PDFInfo
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- CN107611772A CN107611772A CN201710876247.3A CN201710876247A CN107611772A CN 107611772 A CN107611772 A CN 107611772A CN 201710876247 A CN201710876247 A CN 201710876247A CN 107611772 A CN107611772 A CN 107611772A
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Abstract
The present invention proposes a kind of Electroabsorption Modulated Laser and preparation method thereof, the Electroabsorption Modulated Laser is formed by integrating distributed feed-back (DFB) laser on the same substrate and electric absorption (EA), key structure includes grating, waveguide and output light end face, it is characterised in that：The grating of Distributed Feedback Laser is surface grating, particularly side-coupled surface grating, ohmic contact layer and waveguide upper limiting layer both sides positioned at Electroabsorption Modulated Laser slab waveguide, waveguide core layer upper surface is extended downwardly into from epitaxial wafer surface；Output light end face for etching formed perpendicular to the end face on epitaxial wafer surface, can be carried out end face coating without cleavage.The advantage of the invention is that：An extension is only needed, and the end face coating of Electroabsorption Modulated Laser is can be carried out without cleaved substrate, enormously simplify manufacture craft, and is advantageous to be integrated on the same substrate in Electroabsorption Modulated Laser and other opto-electronic devices.
Description
Technical field
The present invention relates to semiconductor photoelectronic device technical field, more particularly to a kind of Electroabsorption Modulated Laser and its system
Preparation Method.
Background technology
Electroabsorption Modulated Laser (Electroabsorption modulated laser, EML) is the important of optical communication
Light source, it is widely used in optical-fibre communications backbone network, Metropolitan Area Network (MAN), access network and chip chamber interconnection communication.EML is by distributed feed-back
(Distributed Feedback Laser, DFB) semiconductor laser and electric absorption (Electro Absorption, EA) are adjusted
The photonic integrated device of device composition processed.In EML, grating is distributed in the whole waveguide of Distributed Feedback Laser, special using the frequency-selecting of grating
Property longitudinal mode is selected, light wave obtain gain simultaneously fed back；It is single vertical so as to realize along with the limitation of transverse mode structure
Mould and transverse mode laser.And EA modulators then carry out electro-absorption modulation to laser caused by DFB, and pass through the end face of EA modulators
Export the laser of electrical modulation.
At present, technical staff generally use built in the structure of grating, the method for multiple extension make EML.So-called extension, refers to
Be using crystal growth kinetics principle on substrate crystal according to the process of its lattice growth monocrystal thin films.In photoelectron material
The epitaxy method commonly used in material mainly has liquid phase epitaxy (Liquid phase epitaxy, LPE), molecular beam epitaxy
(Molecular Beam Epitaxy, MBE) and metallo-organic compound Chemical Vapor-Phase Epitaxy (Metal-
OrganicChemicalVaporDeposition, MOVPE) etc. technology.Traditional EML, making the grating of Distributed Feedback Laser
Before, first in substrate Epitaxial growth once (extension)；Preparing grating carries out extension at least once again after finishing
(extension again)；After extension terminates, then by other post processings, it can just produce EML.Epitaxy technique needs to expend a large amount of originals
Material, equipment is expensive in addition, so this process cost is higher.Grating can be deformed by being additionally, since the heat effect of extension, to protect
Grating quality is demonstrate,proved, it is necessary to propose harsher technological requirement to extension again, then than one time extension of cost of manufacture of extension is higher.
Therefore, high cost of manufacture, the main reason for hindering EML applications is turned into.Therefore, correlation technique proposes the side of surface grating
Method, i.e., after each Rotating fields epitaxial growths of EML, on surface, direct etching grating is to realize single longitudinal mode.Surface grating EML is only needed
An extension is wanted, can effectively reduce cost of manufacture, is with a wide range of applications in the optical fiber communication network in future.
However, due to surface grating apart from active layer relatively far away from, longitudinal mode selective power is relatively weak.In addition, EML has two
Individual end face, one in the end of Distributed Feedback Laser waveguide, another can be formed in the end of EA modulator waveguides, the two end faces
Equivalent Fabry-P é rot (FP) chamber, and FP chambers often produce multiple longitudinal modes.In longitudinal mode selective power is relatively strong
Put in the EML of grating, to suppress FP patterns, generally require for EML to be cleaved into the EML that multiple length are hundreds of microns from substrate
Row, then each column EML is loaded on special sample clamp, is put into vacuum coating equipment and is plated optical film to EML end faces.This side
Formula, not only production efficiency is low, is additionally, since before plated film that cleavage is opened from substrate by EML, and the EML completes
It has been later a single discrete device, it is difficult to carry out further single slice photon and integrate.And the interference problem of FP patterns,
It is particularly acute for the relatively weak surface grating EML of longitudinal mode selective power.
The content of the invention
It is contemplated that at least solves one of above-mentioned technical problem.
Therefore, it is an object of the present invention to propose a kind of Electroabsorption Modulated Laser, the Electroabsorption Modulated Laser
An extension is only needed, and the end face coating of Electroabsorption Modulated Laser is can be carried out without cleaved substrate, enormously simplify system
Make technique, and be advantageous to be integrated on the same substrate in Electroabsorption Modulated Laser and other opto-electronic devices.
It is another object of the present invention to propose a kind of preparation method of Electroabsorption Modulated Laser.
To achieve these goals, the embodiment of first aspect present invention proposes a kind of Electroabsorption Modulated Laser, by
Integrated distributed feedback semiconductor laser and electroabsorption modulator composition on the same substrate, including one section of waveguide, one section
Grating and two end faces, the waveguide run through the Electroabsorption Modulated Laser, and the grating swashs positioned at distributed feedback semiconductor
Light device region, an end for being located at the distributed feedback semiconductor laser in described two end faces, another is positioned at electricity
The end of Absorption modulation device, wherein, the grating is surface grating, its distribution from the Electroabsorption Modulated Laser epitaxial wafer
The surface in feedback semiconductor laser region is extended at the top of the sandwich layer of distributed feedback semiconductor laser waveguide, described two ends
The end face that face is formed for etching.
In addition, Electroabsorption Modulated Laser according to the above embodiment of the present invention can also have technology additional as follows special
Sign：
In some instances, the grating be located at the waveguide of the distributed feedback semiconductor laser ohmic contact layer and
The both sides of upper limiting layer, it is made up of the semiconductor regions and insulator filled region of periodic arrangement, is formed and selected for longitudinal mode
Index-coupled surface grating and transverse mode selection ridge waveguide.
In some instances, the distributed feedback semiconductor laser is when forward current injects work, one part of current
Injected from the semiconductor regions of the grating, without the insulator filled region injection from the grating, formation contains gain coupling
The surface grating of conjunction mechanism.
In some instances, two end faces and the table of the epitaxial wafer that the etching of the Electroabsorption Modulated Laser is formed
Face is vertical.
In some instances, in addition to：Anti-reflective film positioned at electroabsorption modulator end face, the electroabsorption modulator end
Face can plate the anti-reflective film in the case of without cleaved substrate.
In some instances, in addition to：Highly reflecting films in distributed feedback semiconductor laser end face, the distributed feed-back
Semiconductor laser end face can plate the highly reflecting films in the case of without cleaved substrate.
In some instances, the end face that the Electroabsorption Modulated Laser is located at distributed feedback semiconductor laser end is
Plane, the plane are vertical with the wave guide direction of the Electroabsorption Modulated Laser.
In some instances, the Electroabsorption Modulated Laser be located at the end face of electroabsorption modulator end for it is symmetrical gradually
Become sharp conical surface, the waveguide core line coincidence of the symmetry axis of the sharp conical surface and the Electroabsorption Modulated Laser.
Electroabsorption Modulated Laser according to embodiments of the present invention, while there is surface grating and Reticule series, dexterously
Solve that the EML of built-in grating needs multiple extension and the EML longitudinal mode selective powers of surface grating are relatively weak, are difficult to effectively
Suppress end face FP patterns and EML needs that many difficulties such as end face coating could be carried out after cleavage, the electro-absorption modulation laser
Device only needs an extension, and the end face coating of Electroabsorption Modulated Laser is can be carried out without cleaved substrate, enormously simplify
Manufacture craft, and be advantageous to be integrated on the same substrate in Electroabsorption Modulated Laser and other opto-electronic devices.
To achieve these goals, the embodiment of second aspect of the present invention proposes a kind of system of Electroabsorption Modulated Laser
Preparation Method, the Electroabsorption Modulated Laser are the Electroabsorption Modulated Laser described in the above-mentioned first aspect embodiment of the present invention, should
Method comprises the following steps：S1：Carry out epitaxial growth；S2：Carry out the making of waveguide, surface grating and end face；S3：Insulated
Layer filling and the making of top electrodes；S4：Carry out end face coating；S5：Carry out substrate thinning, make back electrode and cleavage, wherein,
The Electroabsorption Modulated Laser only needs an extension in whole preparation process, by etching the distributed feedback semiconductor
The ohm layer and upper limiting layer of laser waveguide two side areas and filling insulating material realize the surface grating, lead to
Over etching forms two end faces of the Electroabsorption Modulated Laser, and in the case of without cleaved substrate, the electricity is inhaled
Two end faces for receiving modulation laser carry out optical coating.
The preparation method of Electroabsorption Modulated Laser according to embodiments of the present invention, dexterously solves built-in grating
EML needs multiple extension and the EML longitudinal mode selective powers of surface grating are relatively weak, are difficult to effectively to suppress end face FP patterns, simultaneously
And EML needs that many difficulties such as end face coating could be carried out after cleavage, obtained Electroabsorption Modulated Laser only needs once outer
Prolong, and the end face coating of Electroabsorption Modulated Laser is can be carried out without cleaved substrate, enormously simplify manufacture craft, and have
Integrated on the same substrate beneficial in Electroabsorption Modulated Laser and other opto-electronic devices.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination accompanying drawings below to embodiment
Substantially and it is readily appreciated that, wherein：
Fig. 1 is the structural representation of Electroabsorption Modulated Laser according to an embodiment of the invention；
Fig. 2 is the overall flow figure of the preparation method of Electroabsorption Modulated Laser according to an embodiment of the invention.
Description of reference numerals：
DFB semiconductor laser 1, EA modulators 2, substrate 3, back electrode 4, grating 11, the etched ends of Distributed Feedback Laser end
Face 12, Distributed Feedback Laser front electrode 14, Distributed Feedback Laser insulating barrier 15, the Reticule series 22 of EA modulators end, EA modulators
Front electrode 24, EA modulators insulating barrier 25.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " on ", " under ",
The orientation or position relationship of the instruction such as "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outer " are
Based on orientation shown in the drawings or position relationship, it is for only for ease of the description present invention and simplifies description, rather than instruction or dark
Show that the device of meaning or element there must be specific orientation, with specific azimuth configuration and operation, thus it is it is not intended that right
The limitation of the present invention.In addition, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint are relative
Importance.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
Electroabsorption Modulated Laser according to embodiments of the present invention and preparation method thereof is described below in conjunction with accompanying drawing.
Fig. 1 is the structural representation of Electroabsorption Modulated Laser according to an embodiment of the invention.As shown in figure 1, should
Electroabsorption Modulated Laser EML is by (the dfb semiconductor laser of distributed feedback semiconductor laser 1 that is integrated on same substrate 3
Device 1) and electroabsorption modulator 2 (EA modulators 2) composition, including one section of waveguide, one section of grating and two end faces, wherein, waveguide
Through Electroabsorption Modulated Laser, grating 11 is located at distributed feedback semiconductor laser region, and one in two end faces is located at
The end of distributed feedback semiconductor laser 1, another is located at the end of electroabsorption modulator 2.In an embodiment of the present invention,
Grating is surface grating 11, and it prolongs from the surface in the distributed feedback semiconductor laser region of Electroabsorption Modulated Laser epitaxial wafer
At the top of the sandwich layer for reaching distributed feedback semiconductor laser waveguide, two end faces are the end face that etching is formed.As shown in figure 1, DFB
The Reticule series of laser end are end face 12, and the Reticule series of EA modulators end are end face 22.
Specifically, for example, conventional semiconductor laser substrate of substrate 3, such as InP, GaAs, with specific reference to extension
Layer material and select.EML can directly use the epitaxial structure of common FP cavity semiconductor lasers, mainly including lower limitation
Layer, sandwich layer, upper limiting layer and ohmic contact layer.The material of epitaxial layer is depending on EML optical maser wavelength, common epitaxial material
Such as including InGaAsP/InP, AlGaInAs/AlInAs, GaAlAs/GaAs etc..
In one embodiment of the invention, grating 11 (i.e. the surface grating 11 of Distributed Feedback Laser 1) is located at distributed feed-back half
The ohmic contact layer of the waveguide of conductor laser 1 and the both sides of upper limiting layer, semiconductor regions and insulation by periodic arrangement
Body filling region is formed, and forms the index-coupled surface grating for longitudinal mode selection and the ridge waveguide of transverse mode selection.
In one embodiment of the invention, distributed feedback semiconductor laser 1 is when forward current injects work, one
Electric current is divided to be injected from the semiconductor regions of grating 11, without the insulator filled region injection from grating 11, formation contains gain
The surface grating of coupling mechanism.
With reference to Fig. 1, specifically, i.e., the surface grating 11 of Distributed Feedback Laser 1 be located at the waveguide upper limiting layer of Distributed Feedback Laser 1 and
The both sides of ohmic contact layer, since the surface of epitaxial wafer, bottom extends to the core of Distributed Feedback Laser 1 at the top of surface grating 11
Layer top, surface grating 11 are formed along wave guide direction by two kinds of material periodicities arrangements.One kind is semi-conducting material, by DFB
The upper limiting layer and ohmic contact layer of laser 1 are formed, for InP-base semiconductor laser, common are InP upper limiting layers and
InGaAs ohmic contact layers, for GaAs base semiconductor lasers, it common are GaAlAs upper limiting layers and InGaAs ohms connect
Contact layer, the periodic structure of grating are formed by photoetching and etching；Another kind is insulating material, common are the nitrogen oxidation of silicon
Thing, polyimides, photoresist etc., formed by deposition, photoetching and etching.The mean refractive index of insulating material is less than semiconductor
Material；The insulating materials of periodic high-index semiconductor and low-refraction, had both formd periodic index distribution, i.e.,
Band gap structure, transverse mode limitation, the i.e. waveguiding structure of Distributed Feedback Laser 1 are formd again.Exactly because surface grating 11 can be from
The surface of epitaxial wafer directly makes, it is not necessary to extension again is carried out after DFB gratings have been made, so the embodiment of the present invention
Electroabsorption Modulated Laser EML only needs an extension, can use the epitaxial wafer of common FP cavity lasers, so as to significantly simple
Manufacture craft is changed.
In one embodiment of the invention, two end faces (i.e. end face 12 that the etching of Electroabsorption Modulated Laser is formed
It is vertical with the surface 22) with epitaxial wafer.
In one embodiment of the invention, the Electroabsorption Modulated Laser also includes：Positioned at electroabsorption modulator end face
22 anti-reflective film, electroabsorption modulator end face 22 can in the case of without cleaved substrate coating anti reflection film.
In one embodiment of the invention, the Electroabsorption Modulated Laser also includes：Swash positioned at distributed feedback semiconductor
The highly reflecting films of light device end face 12, distributed feedback semiconductor laser end face 12 can plate height in the case of without cleaved substrate
Reflectance coating.
In one embodiment of the invention, Electroabsorption Modulated Laser is located at distributed feedback semiconductor laser end
End face 12 is plane, and the plane is vertical with the wave guide direction of Electroabsorption Modulated Laser.
In one embodiment of the invention, the end face 22 that Electroabsorption Modulated Laser is located at electroabsorption modulator end is
Symmetrical gradual change sharp conical surface, the symmetry axis of the sharp conical surface and the waveguide core line of Electroabsorption Modulated Laser overlap.
With reference to Fig. 1, specifically, i.e., EML Reticule series include end face 12 and 22, and end face 12 is swashed positioned at dfb semiconductor
The one end of light device 1, end face 22 are located at the one end of EA modulators 2.Compared to cleaved facets, Reticule series can be realized various by template
The end face of shape.For example to suppress the interference of FP chambers, the end face 22 of light extraction is designed to the gradual change point perpendicular to epitaxial wafer surface
Bore curved surface.To reduce the light extraction of Distributed Feedback Laser end face 12, end face 12 is designed to perpendicular to epitaxial wafer surface and perpendicular to ripple
The plane led.In general EML, end face are formed by dissociating, and dissociation reforms into a single device, end face coating after finishing
Need to carry out each individually device one by one, and Reticule series can be completed on whole epitaxial wafer, after Reticule series are formed
All EML are still on same substrate 3.This not only can allow end face to be carried out on whole epitaxial wafer, once complete whole
All EML end face coating on substrate 3, and be more beneficial for EML and other opto-electronic device collection on same substrate 3
Into.
To sum up, the Electroabsorption Modulated Laser of the above embodiment of the present invention, surface grating and etched ends are based on as one kind
EDS maps feed back the integrated device of (DFB) semiconductor laser and electric absorption (EA) modulator composition, and it includes grating and output
Light end face, grating are side-coupled surface grating, ohmic contact layer and waveguide upper limiting layer both sides positioned at EML slab waveguides,
Waveguide core layer upper surface is extended downwardly into from epitaxial wafer surface, is made up of periodic semiconductor and insulating materials.Output light end
Face for etching formed perpendicular to the end face on epitaxial wafer surface, can be carried out end face coating without cleavage.Output light end face has
Two, the one end for being located at Distributed Feedback Laser, surface is coated with the film to laser high reflectance, and one positioned at EA modulators
One end, surface are coated with the film to laser antiradar reflectivity.The EML only needs an extension, in the case of without cleavage laser device
Plated film is carried out to end face, consequently facilitating single slice photon integrates.
Electroabsorption Modulated Laser according to embodiments of the present invention, while there is surface grating and Reticule series, dexterously
Solve that the EML of built-in grating needs multiple extension and the EML longitudinal mode selective powers of surface grating are relatively weak, are difficult to effectively
Suppress end face FP patterns and EML needs that many difficulties such as end face coating could be carried out after cleavage, the electro-absorption modulation laser
Device only needs an extension, and the end face coating of Electroabsorption Modulated Laser is can be carried out without cleaved substrate, enormously simplify
Manufacture craft, and be advantageous to be integrated on the same substrate in Electroabsorption Modulated Laser and other opto-electronic devices.
Further embodiment of the present invention also proposed a kind of preparation method of Electroabsorption Modulated Laser.
Fig. 2 is the overall flow figure of the preparation method of Electroabsorption Modulated Laser according to an embodiment of the invention.Its
In, the Electroabsorption Modulated Laser is, for example, the Electroabsorption Modulated Laser described by any one above-mentioned embodiment of the present invention.
That is, the specific implementation for the Electroabsorption Modulated Laser being related in the preparation method of the Electroabsorption Modulated Laser and this hair
The specific implementation of the Electroabsorption Modulated Laser of bright above-described embodiment description is similar, specifically refers to and electro-absorption modulation is swashed
The description of light device part, in order to reduce redundancy, here is omitted.
Based on this, as shown in Fig. 2 the preparation method of the Electroabsorption Modulated Laser, comprises the following steps：
S1：Carry out epitaxial growth.
S2：Carry out the making of waveguide, surface grating and end face.
S3：Carry out insulating barrier filling and the making of top electrodes.
S4：Carry out end face coating.
S5：Carry out substrate thinning, make back electrode and cleavage.
Wherein, Electroabsorption Modulated Laser only needs an extension in whole preparation process, by etching distributed feed-back
The ohm layer and upper limiting layer of semiconductor laser waveguide two side areas and filling insulating material realize surface grating,
Two end faces of Electroabsorption Modulated Laser are formed by etching.In addition, in the case of without cleaved substrate, electric absorption is adjusted
Two end faces of laser processed carry out optical coating.
The preparation method of the Electroabsorption Modulated Laser a, it is only necessary to extension, connect by the ohm for etching waveguide both sides
Contact layer and upper limiting layer and fill insulant realize the grating of the DFB semiconductor laser in EML, by etching waveguide two
Upper limiting layer, active layer, lower limit layer and a part of substrate and whole chip plated film at end realize EML output light end face,
And in the case of without cleaved substrate, optical coating is carried out to two end faces of DFB semiconductor laser.
For the ease of more fully understanding the present invention, below in conjunction with specific embodiment, to the electricity of the above embodiment of the present invention
The structure and preparation method of Absorption modulation laser carry out Detailed example description.
Embodiment 1
In the present embodiment, using a kind of wavelength as 1550nm wave bands, the InGaAsP/ based on surface grating and Reticule series
Illustrated exemplified by InP EML preparation method, this method specifically includes following steps：
1. epitaxial growth.In an a kind of highly doped typical 1550nm of n-type InP substrate Epitaxial growth
The epitaxial structure of InGaAsP/InP FP cavity semiconductor lasers.Including such as lower epi layer：N-type InP cushions (thickness 160nm,
Doping concentration about 1 × 1018cm-3), undoped Lattice Matching InGaAsP lower waveguide layers (thickness 80nm, light wavelength of fluorescence
1150nm), InGaAsP active layers MQW (10 pairs of SQWs, the wide 10nm of trap, 0.7% compressive strain, light wavelength of fluorescence
1550nm, build wide 10nm, lattice matched materials, light wavelength of fluorescence 1200nm), waveguide on undoped type Lattice Matching InGaAsP
Layer (thickness 100nm, light wavelength of fluorescence 1150nm), p-type InP waveguides upper limiting layer (thickness 1500nm, doping concentration from 3 ×
1017cm-3It is gradient to as 1 × 1018cm-3) and p-type InGaAs ohmic contact layers (thickness 100nm, doping concentration about 1 ×
1019cm-3).A part for wherein n-InP cushions and n-InP substrates forms the lower limit layer of EML waveguides, ripple under InGaAsP
Ducting layer forms the sandwich layer of waveguide on conducting shell, active layer MQW and InGaAsP.The EML of the present invention only needs this time outer
Epitaxial growth, it enormously simplify device making technics.
2. waveguide, surface grating and Reticule series make.Using plasma enhancing chemical vapor deposition (Plasma
Enhanced Chemical Vapor Deposition, PECVD) or the methods of magnetron sputtering, deposited on ohmic contact layer
200~500nm of thickness SiNxOr SiO2.Using electron beam exposure, EML waveguide and the waveguide of Distributed Feedback Laser, surface are formed
Grating and the photoetching agent pattern of two end faces：Waveguide major part peak width is 1~3 μm, and length is 200~1000 μm；DFB swashs
The grating of light device is located at the waveguide both sides of Distributed Feedback Laser, and the width per side is 1~5 μm, and the cycle is 460~500nm, corresponding
The second order grating of 1550nm wave band InGaAsP Distributed Feedback Lasers.Using reactive ion etching (Reactive Ion Etching,
RIE), with SF6Plasma etching SiNx, or with CF4Plasma etching SiO2, by waveguide, surface grating and Reticule series
Pattern is transferred to SiN from photoresistxOr SiO2.Using electric induction coupled plasma etch (Inductively Coupled
Plasma, ICP), with Cl2、CH4、H2The plasma formed with Ar mixed gas, etch InGaAs ohmic contact layers and InP ripples
Upper limiting layer is led, etching bottom reaches the top of sandwich layer, forms EML shallow ridge waveguide, surface grating and Reticule series pattern.Adopt
With contact exposure, the only photoetching agent pattern of the shallow ridge waveguide of covering Distributed Feedback Laser and surface grating is formed.ICP is used again, with
Cl2、CH4、H2The plasma formed with Ar mixed gas, etch sandwich layer and the InP waveguides of EA modulators and two end regions
Lower limit layer, etching bottom reach InP substrate, are not less than from InGaAsP sandwich layers bottom surface to the depth of etching bottom on InP and limit
The thickness of layer, form two Reticule series of the deep ridge waveguide and EML of EA modulators.
3. insulating barrier is filled and top electrodes make.Using PECVD, SiO is deposited2, thickness is equal to two Reticule series bottoms
Height at the top of portion to EML sandwich layer.The photoetching agent pattern of the electrode pad of EA modulators is lithographically formed, then using buffering hydrogen
Fluoric acid corrodes the SiO under the first layer electrode pad to form EA modulators2Medium.Using PECVD, SiO is deposited2, thickness be equal to from
To the height at the top of InGaAs insulating barriers at the top of EML sandwich layer.It is lithographically formed the electrode pad and EA modulators of Distributed Feedback Laser
The photoetching agent pattern of electrode pad, then corrode the top electrodes to form Distributed Feedback Laser and EA modulators using buffered hydrofluoric acid
SiO under pad2Medium.Using ald (Atomic layer deposition, ALD), deposit thickness is 50~
100nm SiNx, formed to EML waveguides, the surface grating of Distributed Feedback Laser, EML two Reticule series side wall passivation.
SiNxSurface further rotate coating light-sensitive polyimide so that polyimides filling EML waveguides, the seam of surface grating
Gap；Photoetching remove EML waveguides, Distributed Feedback Laser surface grating at the top of polyimides.Further, using RIE, with SF6To be anti-
Answer gas, remove EML waveguides, Distributed Feedback Laser surface grating at the top of SiNx, expose InGaAs Europe of waveguide and surface grating
Nurse contact layer.
Photoetching, remove the photoresist of EML top electrode areas；Ti, Pt, Au are sputtered successively, and then acetone ultrasound peels off shape
Into EML top pattern electrodes, including the top pattern electrodes of the top pattern electrodes of Distributed Feedback Laser and EA modulators.Using
Selective corrosion liquid, remove the EML waveguides between the top pattern electrodes of Distributed Feedback Laser and the top pattern electrodes of EA modulators
On InGaAs ohmic contact layers.
4. Reticule series plated film.Photoetching, form the pattern of the Reticule series for exposing EA modulators, electric induction coupling etc.
Gas ions enhancing chemical vapor deposition (ICP-PECVD) deposition odd-level SiO2/SiNx, formation EA modulation after acetone ultrasound is peeled off
The anti-reflective film of the gradual change pointed cone end face of device.Photoetching, form the pattern of the Reticule series for exposing Distributed Feedback Laser, ICP-
PECVD deposition even levels SiO2/SiNx, the ultrasonic high anti-plated film for peeling off the planar etch end face for forming Distributed Feedback Laser of acetone.
5. substrate thinning, make back electrode and cleavage.Epitaxial wafer front with device is sealed, back side mechanical lapping,
So that the thickness of epitaxial wafer is reduced to 80~120 μm.Ni, Au are sputtered successively, form back electrode.Cleavage, complete EML system
Make.
Embodiment 2
In the present embodiment, using a kind of wavelength as 1310nm wave bands, the AlGaInAs/ based on surface grating and Reticule series
Illustrated exemplified by InP EML preparation method, this method specifically includes following steps：
1. epitaxial growth.In an a kind of highly doped typical 1310nm of n-type InP substrate Epitaxial growth
The epitaxial structure of AlGaInAs/InP FP cavity semiconductor lasers.The structure is generally comprised such as lower epi layer：N-type InP cushions
(thickness 500nm, doping concentration about 1 × 1018cm-3), (thickness 100nm, light are glimmering for undoped Lattice Matching InGaAsP lower waveguide layers
Optical wavelength 1050nm), undoped strain AlGaInAs multiple quantum well active layers (10 cycles, 1% compressive well, thickness 6nm；It is brilliant
Lattice matching is built, thickness 10nm, light wavelength of fluorescence 1270nm), ducting layer (thickness on undoped type Lattice Matching InGaAsP
150nm, light wavelength of fluorescence 1050nm), p-type InP waveguide upper limiting layers I (thickness 100nm, doping concentration about 1 × 1017cm-3)、
InGaAsP ridge waveguide etch stop layers (thickness 20nm), p-type InP waveguide upper limiting layers II (1.7 μm~1.8 μm of thickness, doping
Concentration about 8 × 1017cm-3) and p-type InGaAs ohmic contact layers (thickness 300nm, doping concentration about 1 × 1019cm-3).Wherein n-
A part for InP cushions and n-InP substrates forms the lower limit layer of EML waveguides, and InGaAsP lower waveguide layers, AlGaInAs are more
Ducting layer forms the sandwich layer of EML waveguides on mqw active layer and InGaAsP, and p-InP layers I and II form the upper limit of EML waveguides
Preparative layer.The EML of the present invention only needs this time epitaxial growth, greatly simplifies device making technics.
2. waveguide, surface grating and Reticule series make.Using plasma enhancing chemical vapor deposition (PECVD) or magnetic
The methods of control sputtering, 200~500nm of the deposit thickness SiN on ohmic contact layerxOr SiO2.Using electron beam exposure, formed
EML waveguide and the photoetching agent pattern of the waveguide of Distributed Feedback Laser, surface grating and two end faces：Waveguide major part peak width
For 1~3 μm, length is 200~1000 μm；The grating of Distributed Feedback Laser is located at the waveguide both sides of Distributed Feedback Laser, the width per side
For 1~5 μm, the cycle is 580~620nm, three rank gratings of corresponding 1310nm wave band AlGaInAs Distributed Feedback Lasers.Using reaction
Ion etching (RIE), with SF6Plasma etching SiNx, or with CF4Plasma etching SiO2, by waveguide, surface grating and
The pattern of Reticule series is transferred to SiN from photoresistxOr SiO2.Using electric induction coupled plasma etch (ICP), with Cl2、
CH4、H2The plasma formed with Ar mixed gas, InGaAs ohmic contact layers and InP waveguide upper limiting layers are etched, etch bottom
Portion reaches the top of sandwich layer, forms EML shallow ridge waveguide, surface grating and Reticule series pattern.Photoetching, form only covering DFB
The photoetching agent pattern of the shallow ridge waveguide of laser and surface grating.ICP is used again, with Cl2、BCl3With Ar mixed gas formed etc.
Gas ions, the sandwich layer and InP waveguide lower limit layers, etching bottom for etching EA modulators and two end regions reach InP substrate,
It is not less than the thickness of InP upper limiting layers to the depth of etching bottom from InGaAsP sandwich layers bottom surface, forms the deep ridge ripple of EA modulators
Lead two Reticule series with EML.
3. insulating barrier is filled and top electrodes make.Using PECVD, SiO is deposited2, thickness is equal to two Reticule series bottoms
Height at the top of portion to EML sandwich layer.The photoetching agent pattern of the electrode pad of EA modulators is lithographically formed, then using buffering hydrogen
Fluoric acid corrodes the SiO under the first layer electrode pad to form EA modulators2Medium.Using PECVD, SiO is deposited2, thickness be equal to from
To the height at the top of InGaAs insulating barriers at the top of EML sandwich layer.It is lithographically formed the electrode pad and EA modulators of Distributed Feedback Laser
The photoetching agent pattern of electrode pad, then corrode the top electrodes to form Distributed Feedback Laser and EA modulators using buffered hydrofluoric acid
SiO under pad2Medium.Using ald (ALD), deposit thickness is 50~100nm SiNx, formed to EML waveguides,
The side wall passivation of the surface grating of Distributed Feedback Laser, the two of EML Reticule series.In SiNxSurface further rotate coating light
Quick polyimides so that polyimides filling EML waveguides, the gap of surface grating；Photoetching removes EML waveguides, Distributed Feedback Laser
Surface grating at the top of polyimides.Further, using RIE, with SF6For reacting gas, EML waveguides, Distributed Feedback Laser are removed
Surface grating at the top of SiNx, expose the InGaAs ohmic contact layers of waveguide and surface grating.
Photoetching, remove the photoresist of EML top electrode areas；Ti, Pt, Au are sputtered successively, and then acetone ultrasound peels off shape
Into EML top pattern electrodes, including the top pattern electrodes of the top pattern electrodes of Distributed Feedback Laser and EA modulators.Using
Selective corrosion liquid, remove the EML waveguides between the top pattern electrodes of Distributed Feedback Laser and the top pattern electrodes of EA modulators
On InGaAs ohmic contact layers.
4. Reticule series plated film.Photoetching, form the pattern of the Reticule series for exposing EA modulators, electric induction coupling etc.
Gas ions enhancing chemical vapor deposition (ICP-PECVD) deposition odd-level SiO2/SiNx, formation EA modulation after acetone ultrasound is peeled off
The anti-reflective film of the gradual change pointed cone end face of device.Photoetching, form the pattern of the Reticule series for exposing Distributed Feedback Laser, ICP-
PECVD deposition even levels SiO2/SiNx, the ultrasonic high anti-plated film for peeling off the planar etch end face for forming Distributed Feedback Laser of acetone.
5. substrate thinning, make back electrode and cleavage.Epitaxial wafer front with device is sealed, back side mechanical lapping,
So that the thickness of epitaxial wafer is reduced to 80~120 μm.Ni, Au are sputtered successively, form back electrode.Cleavage, complete EML system
Make.
Embodiment 3
In the present embodiment, using a kind of wavelength as 850nm wave bands, the GaAlAs/ based on surface grating and Reticule series
Illustrated exemplified by GaAs EML preparation method, this method specifically includes following steps：
1. epitaxial growth.In a kind of typical 850nm GaAlAs/ of a highly doped n-type GaAs substrate Epitaxial growth
The epitaxial structure of GaAs FP cavity semiconductor lasers.Generally comprise such as lower epi layer：(thickness 500nm, mixes n-type GaAs cushions
Miscellaneous concentration about 1 × 1018cm-3), undoped Lattice Matching Ga1-xAlx(thickness 1000nm, x=0.45, mix As waveguides lower limit layer
Miscellaneous concentration about 5 × 1017cm-3), undoped Lattice Matching Ga1-xAlxAs lower waveguide layers (thickness 150nm, x=0.06), it is undoped
Strain GaAs/Ga1-xAlxAs multiple quantum well active layers (10 cycles, GaAs SQWs, thickness 10nm；Ga1-xAlxAs builds, thickness
10nm, x=0.06), undoped Lattice Matching Ga1-xAlxThe upper ducting layers of As (thickness 150nm, x=0.06), p-type Ga1-xAlxAs
Waveguide upper limiting layer (thickness 1000nm, x=0.45, doping concentration about 5 × 1017cm-3) and p-type GaAs ohmic contact layer (thickness
300nm, doping concentration about 1 × 1019cm-3).Wherein undoped Lattice Matching Ga1-xAlxAs lower waveguide layers (thickness 150nm, x=
0.06), undoped strain GaAs/Ga1-xAlxAs multiple quantum well active layers (10 cycles, GaAs SQWs, thickness 10nm；Ga1- xAlxAs builds, thickness 10nm, x=0.06) and undoped Lattice Matching Ga1-xAlxThe upper ducting layers of As (thickness 150nm, x=0.06)
Constitute the sandwich layer of EML waveguides.The EML of the present invention only needs this time epitaxial growth, greatly simplifies device making technics.
2. waveguide, surface grating and Reticule series make.Using plasma enhancing chemical vapor deposition (PECVD) or magnetic
The methods of control sputtering, 200~500nm of the deposit thickness SiN on ohmic contact layerxOr SiO2.Using electron beam exposure, formed
EML waveguide and the photoetching agent pattern of the waveguide of Distributed Feedback Laser, surface grating and two end faces：Waveguide major part peak width
For 1~3 μm, length is 200~1000 μm；The grating of Distributed Feedback Laser is located at the waveguide both sides of Distributed Feedback Laser, the width per side
For 1~5 μm, the cycle is 500~540nm, the quadravalence grating of corresponding 850nm wave band GaAlAs/GaAs Distributed Feedback Lasers.Using anti-
Ion etching (RIE) is answered, with SF6Plasma etching SiNx, or with CF4Plasma etching SiO2, by waveguide, surface grating
With the pattern of Reticule series SiN is transferred to from photoresistxOr SiO2.Using electric induction coupled plasma etch (ICP), with
Cl2、BCl3The plasma formed with Ar mixed gas, etch InGaAs ohmic contact layers and Ga1-xAlxLimited in As waveguides
Layer, etching bottom reach the top of sandwich layer, form EML shallow ridge waveguide, surface grating and Reticule series pattern.Using contact
Exposure, form the only photoetching agent pattern of the shallow ridge waveguide of covering Distributed Feedback Laser and surface grating.ICP is used again, with Cl2、BCl3With
The plasma that Ar mixed gas is formed, etch the sandwich layer and Ga of EA modulators and two end regions1-xAlxAs waveguide lower limits
Preparative layer, etching bottom reach GaAs substrates, and the depth from sandwich layer bottom surface to etching bottom is not less than Ga1-xAlxAs upper limiting layers
Thickness, form two Reticule series of the deep ridge waveguide and EML of EA modulators.
3. insulating barrier is filled and top electrodes make.Using PECVD, SiO is deposited2, two end faces of the thickness equal to etching
Height at the top of bottom to EML sandwich layer.The photoetching agent pattern of the electrode pad of EA modulators is lithographically formed, then using buffering
Hydrofluoric acid corrodes the SiO under the first layer electrode pad to form EA modulators2Medium.Using PECVD, SiO is deposited2, thickness is equal to
To the height at the top of InGaAs insulating barriers at the top of EML sandwich layer.It is lithographically formed the electrode pad and EA modulators of Distributed Feedback Laser
Electrode pad photoetching agent pattern, then corroded using buffered hydrofluoric acid to be formed Distributed Feedback Laser and EA modulators top electricity
SiO under the pad of pole2Medium.Using ald (ALD), deposit thickness is 50~100nm SiNx, formed to EML ripples
Lead, the side wall passivation of the surface grating of Distributed Feedback Laser, EML two Reticule series.In SiNxSurface further rotate coating
Light-sensitive polyimide so that polyimides filling EML waveguides, the gap of surface grating；Photoetching removes EML waveguides, DFB laser
Polyimides at the top of the surface grating of device.Further, using RIE, with SF6For reacting gas, EML waveguides, DFB laser are removed
SiN at the top of the surface grating of devicex, expose the InGaAs ohmic contact layers of waveguide and surface grating.
Photoetching, remove the photoresist of EML top electrode areas；Ti, Pt, Au are sputtered successively, and then acetone ultrasound peels off shape
Into EML top pattern electrodes, including the top pattern electrodes of the top pattern electrodes of Distributed Feedback Laser and EA modulators.Using
Selective corrosion liquid, remove the EML waveguides between the top pattern electrodes of Distributed Feedback Laser and the top pattern electrodes of EA modulators
On InGaAs ohmic contact layers.
4. Reticule series plated film.Photoetching, form the pattern of the Reticule series for exposing EA modulators, electric induction coupling etc.
Gas ions enhancing chemical vapor deposition (ICP-PECVD) deposition odd-level SiO2/SiNx, formation EA modulation after acetone ultrasound is peeled off
The anti-reflective film of the gradual change pointed cone end face of device.Photoetching, form the pattern of the Reticule series for exposing Distributed Feedback Laser, ICP-
PECVD deposition even levels SiO2/SiNx, the ultrasonic high anti-plated film for peeling off the planar etch end face for forming Distributed Feedback Laser of acetone.
5. substrate thinning, make back electrode and cleavage.Epitaxial wafer front with device is sealed, back side mechanical lapping,
So that the thickness of epitaxial wafer is reduced to 80~120 μm.Ni, Au are sputtered successively, form back electrode.Cleavage, complete EML system
Make.
To sum up, the preparation method of the Electroabsorption Modulated Laser of the above embodiment of the present invention, on the one hand, due to using surface
Grating, whole EML manufacturing process only need an epitaxial growth, enormously simplify manufacture craft；Another invention, required EML ends
Face is formed by etching, and the end face coating based on whole substrate can be carried out in the case of without cleavage, further enhances EML
With the single chip integrated ability of other photonic devices.
The preparation method of Electroabsorption Modulated Laser according to embodiments of the present invention, dexterously solves built-in grating
EML needs multiple extension and the EML longitudinal mode selective powers of surface grating are relatively weak, are difficult to effectively to suppress end face FP patterns, simultaneously
And EML needs that many difficulties such as end face coating could be carried out after cleavage, obtained Electroabsorption Modulated Laser only needs once outer
Prolong, and the end face coating of Electroabsorption Modulated Laser is can be carried out without cleaved substrate, enormously simplify manufacture craft, and have
Integrated on the same substrate beneficial in Electroabsorption Modulated Laser and other opto-electronic devices.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment or example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Necessarily refer to identical embodiment or example.Moreover, specific features, structure, material or the feature of description can be any
One or more embodiments or example in combine in an appropriate manner.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that：Not
In the case of departing from the principle and objective of the present invention a variety of change, modification, replacement and modification can be carried out to these embodiments, this
The scope of invention is by claim and its equivalent limits.
Claims (9)
- A kind of 1. Electroabsorption Modulated Laser, by integrating distributed feedback semiconductor laser and electric absorption on the same substrate Modulator forms, including one section of waveguide, one section of grating and two end faces, wherein, the waveguide swashs through the electro-absorption modulation Light device, the grating are located at distributed feedback semiconductor laser region, and one in described two end faces is anti-positioned at the distribution The end of semiconductor laser is presented, another is located at the end of electroabsorption modulator, it is characterised in that the grating is surface light Grid, it extends to distribution instead from the surface in the distributed feedback semiconductor laser region of the Electroabsorption Modulated Laser epitaxial wafer At the top of the sandwich layer for presenting semiconductor laser waveguide, described two end faces are the end face that etching is formed.
- 2. Electroabsorption Modulated Laser according to claim 1, it is characterised in that the grating is located at the distributed feed-back The ohmic contact layer of the waveguide of semiconductor laser and the both sides of upper limiting layer, semiconductor regions and insulation by periodic arrangement Body filling region is formed, and forms the index-coupled surface grating for longitudinal mode selection and the ridge waveguide of transverse mode selection.
- 3. Electroabsorption Modulated Laser according to claim 1, it is characterised in that the distributed feedback semiconductor laser When forward current injects work, one part of current is injected from the semiconductor regions of the grating, without from the exhausted of the grating Edge body filling region is injected, and forms the surface grating containing gain coupling mechanism.
- 4. Electroabsorption Modulated Laser according to claim 1, it is characterised in that the quarter of the Electroabsorption Modulated Laser It is vertical with the surface of the epitaxial wafer to lose two end faces formed.
- 5. Electroabsorption Modulated Laser according to claim 1, it is characterised in that also include：Anti-reflective film positioned at electroabsorption modulator end face, the electroabsorption modulator end face can be in the feelings without cleaved substrate The anti-reflective film is plated under condition.
- 6. Electroabsorption Modulated Laser according to claim 1, it is characterised in that also include：Highly reflecting films positioned at distributed feedback semiconductor laser end face, the distributed feedback semiconductor laser end face can be The highly reflecting films are plated in the case of without cleaved substrate.
- 7. Electroabsorption Modulated Laser according to claim 1, it is characterised in that the Electroabsorption Modulated Laser is located at The end face of distributed feedback semiconductor laser end is plane, and the plane and the wave guide direction of the Electroabsorption Modulated Laser are hung down Directly.
- 8. Electroabsorption Modulated Laser according to claim 1, it is characterised in that the Electroabsorption Modulated Laser is located at The end face of electroabsorption modulator end is symmetrical gradual change sharp conical surface, the symmetry axis of the sharp conical surface and the electro-absorption modulation laser The waveguide core line of device overlaps.
- A kind of 9. preparation method of Electroabsorption Modulated Laser as described in claim any one of 1-8, it is characterised in that including Following steps：S1：Carry out epitaxial growth；S2：Carry out the making of waveguide, surface grating and end face；S3：Carry out insulating barrier filling and the making of top electrodes；S4：Carry out end face coating；S5：Carry out substrate thinning, make back electrode and cleavage,Wherein, the Electroabsorption Modulated Laser only needs an extension in whole preparation process, by etching the distribution The ohm layer and upper limiting layer of feedback semiconductor laser waveguide two side areas and filling insulating material realize the table Concave grating, two end faces of the Electroabsorption Modulated Laser are formed by etching, and in the case of without cleaved substrate, it is right Two end faces of the Electroabsorption Modulated Laser carry out optical coating.
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