CN107611255B - 一种高密度磁性存储器件 - Google Patents
一种高密度磁性存储器件 Download PDFInfo
- Publication number
- CN107611255B CN107611255B CN201710812254.7A CN201710812254A CN107611255B CN 107611255 B CN107611255 B CN 107611255B CN 201710812254 A CN201710812254 A CN 201710812254A CN 107611255 B CN107611255 B CN 107611255B
- Authority
- CN
- China
- Prior art keywords
- memory device
- strip form
- magnetic tunnel
- form film
- cobalt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 99
- 230000005290 antiferromagnetic effect Effects 0.000 claims abstract description 30
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000003860 storage Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 5
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 21
- 229910003321 CoFe Inorganic materials 0.000 claims description 18
- 229910019236 CoFeB Inorganic materials 0.000 claims description 18
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 229910052707 ruthenium Inorganic materials 0.000 claims description 18
- 229910052715 tantalum Inorganic materials 0.000 claims description 18
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 18
- 229910019041 PtMn Inorganic materials 0.000 claims description 15
- 239000007769 metal material Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 claims description 9
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910000863 Ferronickel Inorganic materials 0.000 claims description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 6
- OQCGPOBCYAOYSD-UHFFFAOYSA-N cobalt palladium Chemical compound [Co].[Co].[Co].[Pd].[Pd] OQCGPOBCYAOYSD-UHFFFAOYSA-N 0.000 claims description 6
- AVMBSRQXOWNFTR-UHFFFAOYSA-N cobalt platinum Chemical compound [Pt][Co][Pt] AVMBSRQXOWNFTR-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710812254.7A CN107611255B (zh) | 2017-09-11 | 2017-09-11 | 一种高密度磁性存储器件 |
US15/795,223 US10020044B2 (en) | 2017-09-11 | 2017-10-26 | High-density magnetic memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710812254.7A CN107611255B (zh) | 2017-09-11 | 2017-09-11 | 一种高密度磁性存储器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107611255A CN107611255A (zh) | 2018-01-19 |
CN107611255B true CN107611255B (zh) | 2019-09-10 |
Family
ID=61062852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710812254.7A Active CN107611255B (zh) | 2017-09-11 | 2017-09-11 | 一种高密度磁性存储器件 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10020044B2 (zh) |
CN (1) | CN107611255B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101998268B1 (ko) * | 2016-10-21 | 2019-07-11 | 한국과학기술원 | 반도체 소자 |
US10236046B2 (en) * | 2016-11-09 | 2019-03-19 | Imec Vzw | Method of propagating magnetic domain wall in magnetic devices |
CN108538328B (zh) * | 2018-03-07 | 2021-11-02 | 北京航空航天大学 | 一种磁性存储器的数据写入方法 |
CN108492845B (zh) * | 2018-04-03 | 2020-05-26 | 电子科技大学 | 一种基于磁性斯格明子的赛道存储器 |
CN109166962B (zh) * | 2018-08-09 | 2020-10-20 | 北京航空航天大学 | 一种互补型磁性存储单元 |
CN110867511B (zh) * | 2018-08-28 | 2021-09-21 | 中电海康集团有限公司 | 垂直磁化的mtj器件 |
CN109256160B (zh) * | 2018-09-13 | 2022-05-17 | 北京航空航天大学 | 一种自旋轨道矩磁存储器读取方法 |
CN109301063B (zh) * | 2018-09-27 | 2022-05-13 | 中国科学院微电子研究所 | 自旋轨道转矩驱动器件 |
US10600465B1 (en) * | 2018-12-17 | 2020-03-24 | Spin Memory, Inc. | Spin-orbit torque (SOT) magnetic memory with voltage or current assisted switching |
US10658021B1 (en) | 2018-12-17 | 2020-05-19 | Spin Memory, Inc. | Scalable spin-orbit torque (SOT) magnetic memory |
US10930843B2 (en) | 2018-12-17 | 2021-02-23 | Spin Memory, Inc. | Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory |
CN110391331B (zh) * | 2019-07-05 | 2021-03-09 | 北京航空航天大学 | 一种磁性模数转换器 |
US11515205B2 (en) * | 2019-08-30 | 2022-11-29 | Globalfoundries U.S. Inc. | Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC product |
CN112582531A (zh) * | 2019-09-30 | 2021-03-30 | 华为技术有限公司 | 一种磁性存储器及其制备方法 |
US11430832B2 (en) * | 2019-10-30 | 2022-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor MRAM device and method |
CN112928135B (zh) * | 2019-12-05 | 2023-04-07 | 浙江驰拓科技有限公司 | 磁性存储器及其制备方法 |
CN111653664A (zh) * | 2020-04-28 | 2020-09-11 | 北京航空航天大学合肥创新研究院 | 一种磁性存储单元和数据写入方法 |
EP4012710A1 (en) | 2020-12-11 | 2022-06-15 | Imec VZW | A memory cell, device and method for writing to a memory cell |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106229004A (zh) * | 2016-07-11 | 2016-12-14 | 北京航空航天大学 | 一种光写入的非易失性磁存储器 |
CN106449970A (zh) * | 2016-11-03 | 2017-02-22 | 北京航空航天大学 | 一种低功耗磁性存储单元 |
CN106654002A (zh) * | 2016-11-03 | 2017-05-10 | 北京航空航天大学 | 一种低功耗磁性多阻态存储单元 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6048739A (en) * | 1997-12-18 | 2000-04-11 | Honeywell Inc. | Method of manufacturing a high density magnetic memory device |
JP2000322707A (ja) * | 1999-05-10 | 2000-11-24 | Nec Corp | 高飽和磁束密度を有するCo−Fe−Ni磁性膜、およびこれを磁極に用いた複合型薄膜磁気ヘッド、並びに磁気記憶装置 |
US7514271B2 (en) * | 2007-03-30 | 2009-04-07 | International Business Machines Corporation | Method of forming high density planar magnetic domain wall memory |
US8331125B2 (en) * | 2009-08-26 | 2012-12-11 | International Business Machines Corporation | Array architecture and operation for high density magnetic racetrack memory system |
-
2017
- 2017-09-11 CN CN201710812254.7A patent/CN107611255B/zh active Active
- 2017-10-26 US US15/795,223 patent/US10020044B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106229004A (zh) * | 2016-07-11 | 2016-12-14 | 北京航空航天大学 | 一种光写入的非易失性磁存储器 |
CN106449970A (zh) * | 2016-11-03 | 2017-02-22 | 北京航空航天大学 | 一种低功耗磁性存储单元 |
CN106654002A (zh) * | 2016-11-03 | 2017-05-10 | 北京航空航天大学 | 一种低功耗磁性多阻态存储单元 |
Also Published As
Publication number | Publication date |
---|---|
US10020044B2 (en) | 2018-07-10 |
US20180061482A1 (en) | 2018-03-01 |
CN107611255A (zh) | 2018-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107611255B (zh) | 一种高密度磁性存储器件 | |
CN108538328B (zh) | 一种磁性存储器的数据写入方法 | |
US9419210B2 (en) | Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers | |
US8508004B2 (en) | Magnetic element having reduced current density | |
CN104393169B (zh) | 一种无需外部磁场的自旋轨道动量矩磁存储器 | |
CN101452991B (zh) | 具有热辅助写入的磁元件 | |
US7985994B2 (en) | Flux-closed STRAM with electronically reflective insulative spacer | |
CN106449970B (zh) | 一种低功耗磁性存储单元 | |
CN106654002B (zh) | 一种低功耗磁性多阻态存储单元 | |
US20100074092A1 (en) | Reducing Spin Pumping Induced Damping of a Free Layer of a Memory Device | |
EP2118894A2 (en) | An improved high capacity low cost multi-state magnetic memory | |
CN109637569A (zh) | 一种磁性存储单元及其数据写入方法 | |
TWI734378B (zh) | 基於多位垂直磁隧道結的記憶體件 | |
US8295072B2 (en) | Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures | |
CN103794715B (zh) | 一种基于电压控制的磁存储器 | |
CN109166962B (zh) | 一种互补型磁性存储单元 | |
CN105449099B (zh) | 交叉矩阵列式磁性随机存储器及其读写方法 | |
CN107221596A (zh) | 一种用于实现自旋扭矩传递切换的磁性元件、制备方法及磁存储器件 | |
CN110993782B (zh) | 基于钙钛矿型异质结衬底及锯齿型隧穿异质结的自旋轨道动量矩磁存储器 | |
CN105448320B (zh) | 交叉矩阵列式磁性随机存储器及其读写方法 | |
CN102931342A (zh) | 一种霍尔自旋天平材料及元器件 | |
US12014762B2 (en) | Semiconductor memory device with spin-orbit coupling channel | |
CN105405859A (zh) | 交叉矩阵列式磁性随机存储器及其读写方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210303 Address after: 100191 rooms 504a and 504b, 5th floor, 23 Zhichun Road, Haidian District, Beijing Patentee after: Zhizhen storage (Beijing) Technology Co.,Ltd. Address before: 100191 No. 37, Haidian District, Beijing, Xueyuan Road Patentee before: BEIHANG University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231227 Address after: Room 1605, Building 1, No. 117 Yingshan Red Road, Huangdao District, Qingdao City, Shandong Province, 266400 Patentee after: Qingdao Haicun Microelectronics Co.,Ltd. Address before: 100191 rooms 504a and 504b, 5th floor, 23 Zhichun Road, Haidian District, Beijing Patentee before: Zhizhen storage (Beijing) Technology Co.,Ltd. |