CN107603590B - Quantum dot radiation fluorescence effect nuclear battery - Google Patents
Quantum dot radiation fluorescence effect nuclear battery Download PDFInfo
- Publication number
- CN107603590B CN107603590B CN201710727466.5A CN201710727466A CN107603590B CN 107603590 B CN107603590 B CN 107603590B CN 201710727466 A CN201710727466 A CN 201710727466A CN 107603590 B CN107603590 B CN 107603590B
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- dot fluorescent
- fluorescent layer
- sol
- radioactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a quantum dot radiation fluorescence effect nuclear battery, which relates to the field of nuclear energy application and comprises a sealed shell, a radioactive source, a quantum dot fluorescent layer and a semiconductor photovoltaic assembly, wherein the semiconductor photovoltaic assembly comprises a semiconductor, a front electrode and a back electrode, the radioactive source is arranged in the sealed shell, the quantum dot fluorescent layer covers the surface of the radioactive source with radioactivity, the thickness of the quantum dot fluorescent layer is smaller than or equal to the range of radioactive particles in the quantum dot fluorescent layer, the front electrode of the semiconductor photovoltaic assembly covers the quantum dot fluorescent layer, and a quantum dot fluorescent material in the quantum dot fluorescent layer is an all-inorganic perovskite. The invention can regulate and control the emission wavelength of the fluorescent layer by regulating and controlling the components of the quantum dots and the size, thereby obtaining more excellent output performance of the nuclear battery.
Description
Technical Field
The invention relates to the field of nuclear energy application, in particular to a quantum dot radiation fluorescence effect nuclear battery.
Background
Nuclear batteries, also known as radioisotope batteries, are devices that convert energy-carrying particles (such as α particles, β particles and gamma/X rays) released during spontaneous decay of radioisotopes into electrical energy or thermal effects or optical effects caused by the energy-carrying particles, and the like.
In 1957, Elgin-Kidde in the United states firstly proposed that 147Pm and a fluorescent material CdS were mixed to form a light emitter, and then a semiconductor material Si was used to absorb fluorescence and convert the fluorescence into electricity for output. In the early 90 s, Sims and Walko et al propose that a gaseous tritium source and ZnS: Ag fluorescent powder are mixed to form an aerogel-like luminescent light source, and a GaP photovoltaic unit is used for realizing photoelectric conversion.
In 2015, an attempt to improve the performance of a nuclear battery by adding a scintillator as an intermediate transduction material on the basis of a photovoltaic effect radiation nuclear battery was also made by Ashish Sharma et al of the university of louisiana along with NASA green research center, and the research shows that indirect transduction of the photovoltaic effect radiation can be really better than direct transduction of the photovoltaic effect radiation.
However, the emission spectra of the conventional fluorescent materials such as phosphor, scintillator, etc. as the intermediate transduction material are not controllable. Therefore, for different types of semiconductor photovoltaic modules, the fluorescent layer made of the traditional fluorescent material cannot be perfectly adapted, so that the output performance of the battery is influenced, the optimal value of theoretical calculation prediction is deviated, and the best energy conversion effect cannot be realized.
In summary, a battery is lacked at present, the emission wavelength of a fluorescent material can be regulated, and the battery is adaptive to different semiconductor photovoltaic modules by regulating the emission wavelength, so that the output performance of the battery is close to the optimal value predicted by theoretical calculation, and the overall output performance of the nuclear battery is improved.
Disclosure of Invention
The invention provides a quantum dot radiation fluorescence effect nuclear battery, which can obtain more excellent nuclear battery output performance by regulating and controlling the components and the size of a quantum dot fluorescent layer to regulate and control the emission wavelength.
In order to achieve the purpose, the invention adopts the following technical scheme:
the preparation method of the quantum dot fluorescent layer is characterized by comprising the following steps:
s1, mixing methyl methacrylate and polymethyl methacrylate or styrene and polystyrene x: magnetically stirring at the temperature of 55-75 ℃ for 1-3h according to the proportion of 10-x and x =6-8 to obtain sol after the polymethyl methacrylate is completely dissolved;
s2, vacuumizing the sol in a glove box under 0.6-0.8Mpa for 1-2h, removing air dissolved in the sol, standing in a dark place for 24h after vacuumizing, and waiting until the chemical property of the sol is stable;
s3, adding 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azobisisobutyronitrile and the quantum dot fluorescent material into the sol, and magnetically stirring for 1-3 hours at room temperature to obtain a mixed solution, wherein the mass ratio of the 2, 5-diphenyl oxazole, the 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, the azobisisobutyronitrile and the quantum dot fluorescent material is 10 y: y: 10 y: 100-22y, y =0.1-0.5, 2, 5-diphenyloxazole is a luminescent agent, 1, 4-bis [ 2- (5-phenyloxazole) ] benzene is a wave shifter, and azobisisobutyronitrile is a curing agent;
s4, pouring the mixed solution into a steel mould, placing the steel mould in a vacuum oven for vacuumizing for 1h, performing low-temperature prepolymerization at 45-55 ℃ for 24h, and gradually heating to 80-90 ℃ for polymerization for 3-5h to obtain a polymer;
and S5, taking out the steel die, immersing the bottom of the steel die in water, cooling for 15-30min, and demolding the polymer, wherein the polymer is the quantum dot fluorescent layer.
Further, the steel die is a cuboid with the size of a mm b mm, a =20-30mm, and b =1-10 mm.
Further, the steel die is a cylinder with a mm diameter and b mm height, wherein a =20-30mm and b =1-10 mm.
Further, the mixing ratio of methyl methacrylate and polymethyl methacrylate or styrene and polystyrene was 7: 3.
The invention provides a quantum dot fluorescent layer prepared by using a preparation method of the quantum dot fluorescent layer.
The invention also provides a quantum dot radiation fluorescence effect nuclear battery which comprises a sealed shell, a radioactive source, a quantum dot fluorescent layer and a semiconductor photovoltaic assembly, wherein the semiconductor photovoltaic assembly comprises a semiconductor, a front electrode and a back electrode, the radioactive source is arranged in the sealed shell, the quantum dot fluorescent layer covers the surface of the radioactive source with radioactivity, the thickness of the quantum dot fluorescent layer is smaller than or equal to the range of radioactive particles of the radioactive source in the quantum dot fluorescent layer, the front electrode of the semiconductor photovoltaic assembly covers the quantum dot fluorescent layer, and a quantum dot fluorescent material in the quantum dot fluorescent layer is an all-inorganic perovskite.
Furthermore, the radioactive sources include α sources, β sources and gamma sources, and the radioactive sources are single-sided radioactive sources, double-sided radioactive sources and cylindrical radioactive sources.
Further, the chemical formula of the all-inorganic perovskite is CsPbX3Wherein X is halogen, including Cl, Br, I.
Furthermore, the semiconductor adopts one of InGaP, GaAs and Ge, and the front electrode adopts one of Au, Ge and Ni.
The invention has the beneficial effects that:
according to the invention, the quantum dot fluorescent layer adopts the all-inorganic perovskite as a fluorescent material, the emission spectrum of the all-inorganic perovskite is adjustable, and the emission wavelength of the quantum dot fluorescent layer is adapted to the matched semiconductor photovoltaic module by adjusting and controlling the self size and the components of the all-inorganic perovskite, so that the transduction effect of the quantum dot fluorescent layer is close to the optimal value predicted by theoretical calculation, the transduction effect is improved, and the overall output performance of the battery is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a first embodiment of the present invention;
FIG. 2 is a top view of a first embodiment of the present invention;
FIG. 3 is a schematic diagram of a quantum dot phosphor layer according to the present invention.
FIG. 4 is a schematic view of a semiconductor photovoltaic module according to the present invention;
FIG. 5 is a schematic view of the installation position of the quantum dot fluorescent layer and the semiconductor photovoltaic module according to the present invention;
FIG. 6 is a schematic view of the mounting of the radioactive source, quantum dot phosphor layer and semiconductor photovoltaic module of the present invention;
FIG. 7 shows different physical parameters CsPbBr3And (3) a radiation induced fluorescence spectrum diagram of the quantum dot fluorescent layer.
The device comprises a screw 1, a sealed shell 2, a nonradioactive metal 3, a radioactive metal 4, a quantum dot fluorescent layer 5, a front electrode 6, a semiconductor 7 and a back electrode 8.
Detailed Description
In order that those skilled in the art will better understand the technical solutions of the present invention, the present invention will be further described in detail with reference to the following detailed description.
Example one
The preparation method of the quantum dot fluorescent layer comprises the following steps:
s1, taking methyl methacrylate and polymethyl methacrylate, and uniformly stirring the methyl methacrylate and the polymethyl methacrylate by magnetic force at the temperature of 55 ℃ in a ratio of 7:3 to completely dissolve the polymethyl methacrylate and prepare sol;
and S2, vacuumizing for 1h under 0.6Mpa, removing the air dissolved in the sol, and standing for 24h in a dark place until the chemical property of the sol is stable.
S3, putting 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azodiisobutyronitrile and CsPbBr in a glove box3Adding sol, 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azodiisobutyronitrile and CsPbBr into the quantum dot material3The mass ratio of the quantum dot material is 2: 0.2: 0.2: 2: 95.6, magnetically stirring for 1 hour at room temperature;
s4, pouring the sol in the S3 into a customized steel die, wherein the size of the customized square steel die is 30mm x 1mm, vacuumizing the customized square steel die in a vacuum oven for 1h, performing low-temperature prepolymerization at 45 ℃ for 24h, and gradually heating to 80 ℃ for polymerization for 3 h;
s5, soaking the bottom of the mold in water for cooling for 15min, and demolding to obtain CsPbBr with the thickness of 71 μm3Namely the quantum dot fluorescent layer.
The quantum dot radiation fluorescence effect nuclear battery, as shown in fig. 1 and fig. 2, comprises: the device comprises a sealed shell 2, a radioactive source, a quantum dot fluorescent layer 5 and a semiconductor photovoltaic module.
The radioactive source is a double-sided radioactive source and comprises a non-radioactive metal 3 and a radioactive metal 4, wherein the radioactive metal 4 is placed at the central position of the non-radioactive metal 3, the non-radioactive metal 3 and the radioactive metal 4 are of an integrated structure, the thickness of the integrated structure is about 5 mu m, the non-radioactive metal 3 is metal nickel, and the radioactive metal 4 is metal nickel-63.
The thickness of the quantum dot fluorescent layer 5 is less than or equal to the range of radioactive particles in the fluorescent layer.
The semiconductor photovoltaic module comprises a semiconductor 7, a front electrode 6 and a back electrode 8. The semiconductor 7 is formed by epitaxial layer growth on a Ge substrate using MOCVD (Metal-organic Chemical Vapor Deposition) technology. The front electrode 6 adopts a comb-shaped dense grid type, and the main grid is positioned at the edge of the active area on the surface of the semiconductor photovoltaic module and is vertical to the fine grid.
The sealed housing 2 has a size of 40 mm x 60 mm, is hollow inside, has a hollow portion size of 35 mm x 30mm x 40 mm, has a rectangular floor surface, and is formed by cutting circular holes with a radius of 1mm on the top surface and the floor surface of the sealed housing.
The radioactive source is arranged in the middle of the sealed shell 2, the radioactive source is a double-sided radioactive source, the upper plane and the lower plane of the sealed shell are both covered with the quantum dot fluorescent layer 5, and the other surface of the quantum dot fluorescent layer 5 is tightly attached to the front electrode 6 of the semiconductor photovoltaic component. The semiconductor 7 and the back electrode 8 are sequentially superposed on the other surface of the front electrode 6, the front electrode 6 and the back electrode 8 are welded with a lead, the lead is led out through a hole in the sealed shell 2, and four corners of the top surface and the bottom surface of the sealed shell 2 are fastened through screws 1.
Example two
The preparation method of the quantum dot fluorescent layer comprises the following steps:
s1, taking methyl methacrylate and polymethyl methacrylate, and uniformly stirring the methyl methacrylate and the polymethyl methacrylate by magnetic force at the temperature of 60 ℃ in a ratio of 6:4 to completely dissolve the methyl methacrylate and prepare sol;
s2, vacuumizing for 1.5h under 0.7Mpa, removing the air dissolved in the sol, and standing for 24h in a dark place until the chemical property of the sol is stable;
s3, mixing 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azodiisobutyronitrile and CsPbBr in a glove box3Adding 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azodiisobutyronitrile and CsPbX into sol by using quantum dot material3The mass ratio of the quantum dot material is 3: 0.3: 0.3: 3: 93.4, stirring for 2 hours at room temperature by magnetic force to uniformly mix the filler and the matrix material;
s4, pouring the sol of S3 into a customized steel die, wherein the size of the customized square steel die is 30mm x 3mm, vacuumizing the customized square steel die in a vacuum oven for 2 hours, performing low-temperature prepolymerization at 50 ℃ for 24 hours, and gradually heating to 85 ℃ for polymerization for 3 hours;
s5, immersing the bottom of the steel die into water for cooling for 20min, and removingMolding to obtain CsPbX with the thickness of 141 mu m3And the quantum dot fluorescent layer.
A quantum dot fluorescence-induced nuclear battery comprising: the device comprises a sealed shell 2, a radioactive source, a quantum dot fluorescent layer 5 and a semiconductor photovoltaic module.
The radioactive source is a double-sided radioactive source and comprises a non-radioactive metal 3 and a radioactive metal 4, wherein the radioactive metal 4 is placed at the central position of the non-radioactive metal 3, the non-radioactive metal 3 and the radioactive metal 4 are of an integrated structure, the thickness of the integrated structure is about 5 mu m, the non-radioactive metal 3 is metal nickel, and the radioactive metal 4 is metal nickel-63.
The thickness of the quantum dot fluorescent layer 5 is less than or equal to the range of radioactive particles in the fluorescent layer.
The semiconductor photovoltaic module comprises a semiconductor 7, a front electrode 6 and a back electrode 8. The semiconductor 7 is formed by epitaxial layer growth on a Ge substrate using MOCVD technology. The front electrode 6 adopts a comb-shaped dense grid type, and the main grid is positioned at the edge of the active area on the surface of the semiconductor photovoltaic module and is vertical to the fine grid.
The sealed housing 2 has a size of 40 mm x 60 mm, is hollow inside, has a hollow portion size of 35 mm x 30mm x 40 mm, has a rectangular floor surface, and is formed by cutting circular holes with a radius of 1mm on the top surface and the floor surface of the sealed housing.
The radioactive source is arranged in the middle of the sealed shell 2, the radioactive source is a double-sided radioactive source, the upper plane and the lower plane of the sealed shell are both covered with the quantum dot fluorescent layer 5, and the other surface of the quantum dot fluorescent layer 5 is tightly attached to the front electrode 6 of the semiconductor photovoltaic component. The semiconductor 7 and the back electrode 8 are sequentially superposed on the other surface of the front electrode 6, the front electrode 6 and the back electrode 8 are welded with a lead, the lead is led out through a hole in the sealed shell 2, and four corners of the top surface and the bottom surface of the sealed shell 2 are fastened through screws 1.
EXAMPLE III
The preparation method of the quantum dot fluorescent layer comprises the following steps:
s1, taking methyl methacrylate and polymethyl methacrylate, and uniformly stirring the methyl methacrylate and the polymethyl methacrylate by magnetic force at the temperature of 70 ℃ in a ratio of 8:2 to completely dissolve the methyl methacrylate and prepare sol;
and S2, vacuumizing for 2h under 0.7Mpa, removing the air dissolved in the sol, and standing for 24h in a dark place until the chemical property of the sol is stable.
S3, mixing 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azodiisobutyronitrile and CsPbBr in a glove box3Adding the quantum dot material into the matrix material in the step one, namely 2, 5-diphenyloxazole, 1, 4-bis [ 2- (5-phenyloxazole) ] benzene, azodiisobutyronitrile and CsPbBr3The mass ratio of the quantum dot material is 4: 0.4: 0.4: 4: 91.2, magnetically stirring for 2 hours at room temperature;
s4, pouring the sol of S3 into a customized steel die, wherein the size of the customized square steel die is 30mm x 5 mm, vacuumizing the customized square steel die in a vacuum oven for 1h, performing low-temperature prepolymerization at 45-55 ℃ for 24h, and gradually heating to 80-90 ℃ for polymerization for 4 h;
s5, soaking the bottom of the mold in water for cooling for 30min, and demolding to obtain CsPbX with thickness of 273 μm3And the quantum dot fluorescent layer.
A quantum dot fluorescence-induced nuclear battery comprising: the device comprises a sealed shell 2, a radioactive source, a quantum dot fluorescent layer 5 and a semiconductor photovoltaic module.
The radioactive source is a double-sided radioactive source and comprises a non-radioactive metal 3 and a radioactive metal 4, wherein the radioactive metal 4 is placed at the central position of the non-radioactive metal 3, the non-radioactive metal 3 and the radioactive metal 4 are of an integrated structure, the thickness of the integrated structure is about 5 mu m, the non-radioactive metal 3 is metal nickel, and the radioactive metal 4 is metal nickel-63.
The thickness of the quantum dot fluorescent layer 5 is less than or equal to the range of radioactive particles in the fluorescent layer.
The semiconductor photovoltaic module comprises a semiconductor 7, a front electrode 6 and a back electrode 8. The semiconductor 7 is formed by epitaxial layer growth on a Ge substrate using MOCVD technology. The front electrode 6 adopts a comb-shaped dense grid type, and the main grid is positioned at the edge of the active area on the surface of the semiconductor photovoltaic module and is vertical to the fine grid.
The sealed housing 2 has a size of 40 mm x 60 mm, is hollow inside, has a hollow portion size of 35 mm x 30mm x 40 mm, has a rectangular floor surface, and is formed by cutting circular holes with a radius of 1mm on the top surface and the floor surface of the sealed housing.
The radioactive source is arranged in the middle of the sealed shell 2, the radioactive source is a double-sided radioactive source, the upper plane and the lower plane of the sealed shell are both covered with the quantum dot fluorescent layer 5, and the other surface of the quantum dot fluorescent layer 5 is tightly attached to the front electrode 6 of the semiconductor photovoltaic component. The semiconductor 7 and the back electrode 8 are sequentially superposed on the other surface of the front electrode 6, the front electrode 6 and the back electrode 8 are welded with a lead, the lead is led out through a hole in the sealed shell 2, and four corners of the top surface and the bottom surface of the sealed shell 2 are fastened through screws 1.
Example four
The preparation method of the quantum dot fluorescent layer comprises the following steps:
s1, taking styrene and polystyrene, and uniformly stirring the styrene and the polystyrene by magnetic force at 50 ℃ according to the proportion of 7:3 to completely dissolve the polystyrene and prepare sol;
s2, vacuumizing for 2h under 0.8Mpa, removing air dissolved in the sol, and standing for 24h in a dark place until the chemical property of the sol is stable;
s3, mixing 2, 5-diphenyloxazole, 1, 4-bis [ 2- (5-phenyloxazole) ] benzene, azobisisobutyronitrile and CsPbCl in a glove box3Adding 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azodiisobutyronitrile and CsPbCl into the sol by using quantum dot material3The mass ratio of the quantum dot material is 4: 0.4: 0.4: 4: 91.2, magnetically stirring for 3 hours at room temperature;
s4, pouring the sol in the S3 into a customized steel die, wherein the size of the customized square steel die is 30mm x 3mm, vacuumizing the customized square steel die in a vacuum oven for 3 hours, performing low-temperature prepolymerization at the temperature of 45-55 ℃ for 24 hours, and gradually heating to the temperature of 80-90 ℃ for polymerization for 5 hours;
s5, soaking the bottom of the mold in water for cooling for 30min, and demolding to obtain the CsPbX with the thickness of 137 μm3And the quantum dot fluorescent layer.
A quantum dot fluorescence-induced nuclear battery comprising: the device comprises a sealed shell 2, a radioactive source, a quantum dot fluorescent layer 5 and a semiconductor photovoltaic module.
The radioactive source is a double-sided radioactive source and comprises a non-radioactive metal 3 and a radioactive metal 4, wherein the radioactive metal 4 is placed at the central position of the non-radioactive metal 3, the non-radioactive metal 3 and the radioactive metal 4 are of an integrated structure, the thickness of the integrated structure is about 5 mu m, the non-radioactive metal 3 is metal nickel, and the radioactive metal 4 is metal nickel-63.
The semiconductor photovoltaic module comprises a semiconductor 7, a front electrode 6 and a back electrode 8. The semiconductor 7 is formed by epitaxial layer growth on a Ge substrate using MOCVD technology. The front electrode 6 adopts a comb-shaped dense grid type, and the main grid is positioned at the edge of the active area on the surface of the semiconductor photovoltaic module and is vertical to the fine grid.
The sealed housing 2 has a size of 40 mm x 60 mm, is hollow inside, has a hollow portion size of 35 mm x 30mm x 40 mm, has a rectangular floor surface, and is formed by cutting circular holes with a radius of 1mm on the top surface and the floor surface of the sealed housing.
The radioactive source is arranged in the middle of the sealed shell 2, the radioactive source is a double-sided radioactive source, the upper plane and the lower plane of the sealed shell are both covered with the quantum dot fluorescent layer 5, and the other surface of the quantum dot fluorescent layer 5 is tightly attached to the front electrode 6 of the semiconductor photovoltaic component. The semiconductor 7 and the back electrode 8 are sequentially superposed on the other surface of the front electrode 6, the front electrode 6 and the back electrode 8 are welded with a lead, the lead is led out through a hole in the sealed shell 2, and four corners of the top surface and the bottom surface of the sealed shell 2 are fastened through screws 1.
EXAMPLE five
The preparation method of the quantum dot fluorescent layer comprises the following steps:
s1, taking styrene and polystyrene, and uniformly stirring the styrene and the polystyrene by magnetic force at 50 ℃ according to the proportion of 7:3 to completely dissolve the polystyrene and prepare sol;
s2, vacuumizing for 1h under 0.6Mpa, removing air dissolved in the sol, and standing for 24h in a dark place until the chemical property of the sol is stable;
s3, mixing 2, 5-diphenyloxazole, 1, 4-bis [ 2- (5-phenyloxazole) ] benzene, azobisisobutyronitrile and CsPbI in a glove box3Adding 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azodiisobutyronitrile and CsPbI into the sol by using quantum dot material3The mass ratio of the quantum dot material is 4: 0.4: 0.4: 4: 91.2, magnetically stirring for 3 hours at room temperature;
s4, pouring the sol in the S3 into a customized steel die, wherein the size of the customized square steel die is 30mm x 3mm, vacuumizing the customized square steel die in a vacuum oven for 2 hours, performing low-temperature prepolymerization at 55 ℃ for 24 hours, and gradually heating to 90 ℃ for polymerization for 5 hours;
s5, immersing the bottom of the mold into waterCooling for 30min to obtain CsPbBr with thickness of 127 μm3And the quantum dot fluorescent layer.
A quantum dot fluorescence-induced nuclear battery comprising: the device comprises a sealed shell 2, a radioactive source, a quantum dot fluorescent layer 5 and a semiconductor photovoltaic module.
The radioactive source is a double-sided radioactive source and comprises a non-radioactive metal 3 and a radioactive metal 4, wherein the radioactive metal 4 is placed at the central position of the non-radioactive metal 3, the non-radioactive metal 3 and the radioactive metal 4 are of an integrated structure, the thickness of the integrated structure is about 5 mu m, the non-radioactive metal 3 is metal nickel, and the radioactive metal 4 is metal nickel-63.
The thickness of the quantum dot fluorescent layer 5 is less than or equal to the range of radioactive particles in the fluorescent layer.
The semiconductor photovoltaic module comprises a semiconductor 7, a front electrode 6 and a back electrode 8. The semiconductor 7 is formed by epitaxial layer growth on a Ge substrate using MOCVD technology. The front electrode 6 adopts a comb-shaped dense grid type, and the main grid is positioned at the edge of the active area on the surface of the semiconductor photovoltaic module and is vertical to the fine grid.
The sealed housing 2 has a size of 40 mm x 60 mm, is hollow inside, has a hollow portion size of 35 mm x 30mm x 40 mm, has a rectangular floor surface, and is formed by cutting circular holes with a radius of 1mm on the top surface and the floor surface of the sealed housing.
The radioactive source is arranged in the middle of the sealed shell 2, the radioactive source is a double-sided radioactive source, the upper plane and the lower plane of the sealed shell are both covered with the quantum dot fluorescent layer 5, and the other surface of the quantum dot fluorescent layer 5 is tightly attached to the front electrode 6 of the semiconductor photovoltaic component. The semiconductor 7 and the back electrode 8 are sequentially superposed on the other surface of the front electrode 6, the front electrode 6 and the back electrode 8 are welded with a lead, the lead is led out through a hole in the sealed shell 2, and four corners of the top surface and the bottom surface of the sealed shell 2 are fastened through screws 1.
The beneficial effects of the invention include:
compared with the traditional large-particle-size fluorescent powder, the quantum dot fluorescent layer adopts all-inorganic perovskite as a fluorescent material, and the emission wavelength of the quantum dot fluorescent layer can be regulated and controlled by regulating and controlling the components and the size of the quantum dot so as to adapt to different rear-end semiconductor photovoltaic components, so that the energy conversion effect of the quantum dot fluorescent layer is close to the optimal value predicted by theoretical calculation, and more excellent nuclear battery output performance is obtained;
adopts CsPbX with higher fluorescence quantum efficiency3Compared with the traditional cadmium quantum dot, the quantum dot fluorescent layer prepared by X = Cl, Br and I has higher radiation fluorescence conversion efficiency, improves the radiation fluorescence light intensity by 10-20%, has mature and simple preparation process and low cost, and is beneficial to mass preparation;
the fluorescent layer prepared by the in-situ polymerization method removes a base material required in the preparation of the conventional fluorescent layer, can obtain a complete fluorescent layer without using glass or quartz as the base material, removes a base material with high light transmittance, improves the energy conversion efficiency of the nuclear battery by 5-10 percent, and enables the structure of the whole nuclear battery to be more compact;
the fluorescent layer prepared by the in-situ polymerization method can be used for preparing fluorescent layers with different size requirements, is suitable for different types (bulk radioactive sources, single/double-sided radioactive sources) and radioactive sources with different sizes, has mature and simple process and is easy to realize;
the fluorescent layer is used as an intermediate energy conversion medium from radiant energy to electric energy, the semiconductor energy conversion material is not subjected to ionizing radiation of radioactive particles, the excellent radiation resistance of the quantum dot material ensures the stability of the fluorescent layer under the radiation condition, and the service life of the whole nuclear battery is prolonged;
the fluorescent layer with multiple butted surfaces is adopted, so that the utilization rate of the bulk radioactive source and the double-sided radioactive source is improved, and the overall energy conversion efficiency and the output performance of the nuclear battery are improved.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. The preparation method of the quantum dot fluorescent layer is characterized by comprising the following steps:
s1, mixing methyl methacrylate and polymethyl methacrylate or styrene and polystyrene in a ratio of x: magnetically stirring at the temperature of 55-75 ℃ for 1-3h according to the proportion of 10-x and x =6-8 to obtain sol after the polymethyl methacrylate or the polystyrene is completely dissolved;
s2, vacuumizing the sol in a glove box under 0.6-0.8Mpa for 1-2h, removing air dissolved in the sol, standing in a dark place for 24h after vacuumizing, and waiting until the chemical property of the sol is stable;
s3, adding 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azodiisobutyronitrile and a quantum dot fluorescent material into the sol, wherein the quantum dot fluorescent material comprises CsPbBr3、CsPbI3And magnetically stirring for 1-3h at room temperature to obtain a mixed solution, wherein the mass ratio of the 2, 5-diphenyloxazole, the 1, 4-bis [ 2- (5-phenyloxazole) ] benzene, the azodiisobutyronitrile and the quantum dot fluorescent material is 10 y: y: 10 y: 100-22y, y = 0.1-0.5;
s4, pouring the mixed solution into a steel mould, placing the steel mould in a vacuum oven, vacuumizing for 1-3h, performing low-temperature prepolymerization at 45-55 ℃ for 24h, gradually heating to 80-95 ℃, and polymerizing for 3-5h to obtain a polymer;
and S5, taking out the steel die, immersing the bottom of the steel die in water, cooling for 15-30min, and demolding the polymer, wherein the polymer is the quantum dot fluorescent layer.
2. The method for preparing a quantum dot fluorescent layer according to claim 1, wherein the steel die is a rectangular parallelepiped with dimensions of a mm x b mm, a =20-30mm, and b =1-10 mm.
3. The method for preparing a quantum dot fluorescent layer according to claim 1, wherein the steel die is a cylinder with a mm diameter and b mm height, and a =20-30mm and b =1-10 mm.
4. The method for preparing a quantum dot fluorescent layer according to claim 1, wherein the mixing ratio of the methyl methacrylate and the polymethyl methacrylate or the styrene and the polystyrene is 7: 3.
5. The quantum dot fluorescent layer prepared by the preparation method of claim 1.
6. The quantum dot radiation fluorescence effect nuclear battery is characterized by comprising a sealed shell, a radioactive source, a quantum dot fluorescent layer and a semiconductor photovoltaic assembly, wherein the semiconductor photovoltaic assembly comprises a semiconductor, a front electrode and a back electrode, the radioactive source is arranged in the sealed shell, the quantum dot fluorescent layer covers the surface of the radioactive source with radioactivity, the thickness of the quantum dot fluorescent layer is smaller than or equal to the range of radioactive particles of the radioactive source in the quantum dot fluorescent layer, the front electrode of the semiconductor photovoltaic assembly covers the quantum dot fluorescent layer, and a quantum dot fluorescent material in the quantum dot fluorescent layer is an all-inorganic perovskite;
the preparation method of the quantum dot fluorescent layer is characterized by comprising the following steps of:
s1, mixing methyl methacrylate and polymethyl methacrylate or styrene and polystyrene in a ratio of x: magnetically stirring at the temperature of 55-75 ℃ for 1-3h according to the proportion of 10-x and x =6-8 to obtain sol after the polymethyl methacrylate or the polystyrene is completely dissolved;
s2, vacuumizing the sol in a glove box under 0.6-0.8Mpa for 1-2h, removing air dissolved in the sol, standing in a dark place for 24h after vacuumizing, and waiting until the chemical property of the sol is stable;
s3, adding 2, 5-diphenyl oxazole, 1, 4-bis [ 2- (5-phenyl oxazole) ] benzene, azodiisobutyronitrile and a quantum dot fluorescent material into the sol, wherein the quantum dot fluorescent material comprises CsPbBr3、CsPbI3And magnetically stirring for 1-3h at room temperature to obtain a mixed solution, wherein the mass ratio of the 2, 5-diphenyloxazole, the 1, 4-bis [ 2- (5-phenyloxazole) ] benzene, the azodiisobutyronitrile and the quantum dot fluorescent material is 10 y: y: 10 y: 100-22y, y = 0.1-0.5;
s4, pouring the mixed solution into a steel mould, placing the steel mould in a vacuum oven, vacuumizing for 1-3h, performing low-temperature prepolymerization at 45-55 ℃ for 24h, gradually heating to 80-95 ℃, and polymerizing for 3-5h to obtain a polymer;
and S5, taking out the steel die, immersing the bottom of the steel die in water, cooling for 15-30min, and demolding the polymer, wherein the polymer is the quantum dot fluorescent layer.
7. The quantum dot radiofluorescence effect nuclear battery according to claim 6, wherein the radioactive sources comprise α source, β source and gamma source, and the radioactive sources are single-sided radioactive source, double-sided radioactive source and cylindrical radioactive source.
8. The quantum dot fluorogenic effect nuclear battery according to claim 6, wherein the all-inorganic perovskite has the chemical formula CsPbX3, wherein X is a halogen.
9. The quantum dot fluorescence nuclear cell according to claim 6, wherein the semiconductor is one of InGaP, GaAs, and Ge, and the front electrode is one of Au, Ge, and Ni.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710727466.5A CN107603590B (en) | 2017-08-23 | 2017-08-23 | Quantum dot radiation fluorescence effect nuclear battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710727466.5A CN107603590B (en) | 2017-08-23 | 2017-08-23 | Quantum dot radiation fluorescence effect nuclear battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107603590A CN107603590A (en) | 2018-01-19 |
| CN107603590B true CN107603590B (en) | 2020-07-07 |
Family
ID=61065511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710727466.5A Active CN107603590B (en) | 2017-08-23 | 2017-08-23 | Quantum dot radiation fluorescence effect nuclear battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107603590B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110799626B (en) * | 2017-06-23 | 2023-02-28 | 住友化学株式会社 | Composition, film, laminated structure, light-emitting device, display, and method for producing composition |
| CN111778017A (en) * | 2020-06-30 | 2020-10-16 | 南京理工大学 | Manganese-doped Cs with high light yield3Cu2I5Halide scintillator |
| CN112447309A (en) * | 2020-11-20 | 2021-03-05 | 中国工程物理研究院材料研究所 | Radiation-induced fluorescent isotope battery and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129249B (en) * | 2016-06-28 | 2019-01-01 | 湖北大学 | A kind of perovskite-quantum dot double absorption layer solar battery and preparation method thereof |
| CN106953013B (en) * | 2017-03-30 | 2019-04-23 | 中南大学 | A kind of two-sided photoresponse perovskite solar battery and preparation method thereof |
-
2017
- 2017-08-23 CN CN201710727466.5A patent/CN107603590B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107603590A (en) | 2018-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107603590B (en) | Quantum dot radiation fluorescence effect nuclear battery | |
| CN103996734B (en) | A kind of fluorescence coating, the preparation method of this fluorescence coating and the application in nuclear battery thereof | |
| CN104409127B (en) | Composite converting type isotope battery | |
| CN103996733B (en) | A kind of photoelectricity nuclear battery | |
| Bogachuk et al. | Perovskite solar cells with carbon‐based electrodes–quantification of losses and strategies to overcome them | |
| US9224901B1 (en) | Scintillator and semiconductor based materials incorporating radioactive materials | |
| Bao et al. | Betavoltaic performance of radiation-hardened high-efficiency Si space solar cells | |
| CN103996422A (en) | Fluorescent nuclear battery | |
| CN106297936A (en) | Isotope β x radiation x fluorescence radiation photovoltaic cell | |
| CN110444313A (en) | One kind radiating volta effect nuclear battery based on silicon carbide PN junction β | |
| CN108807564A (en) | A kind of radiation photovoltaic isotope battery encapsulating structure | |
| CN102446572A (en) | Tritium isotope microcell and preparation method thereof | |
| CN201584423U (en) | Novel solar battery pack | |
| CN208127224U (en) | A kind of solar energy power generating plate that generating efficiency is high | |
| CN106876519A (en) | A kind of alundum (Al2O3) is passivated the two-sided crystal silicon solar batteries preparation method of N-type | |
| US10144707B2 (en) | Tritiated nitroxides and uses thereof | |
| CN105070341A (en) | Preparation method of photoelectric nuclear battery | |
| CN102315104A (en) | Manufacturing method for realizing selective-emitter crystalline silicon solar cell through neutron transmutation doping | |
| CN110571286A (en) | Preparation method of up-conversion rare earth fluoride and copper oxide composite electrode | |
| US9305674B1 (en) | Method and device for secure, high-density tritium bonded with carbon | |
| CN206774568U (en) | A kind of photovoltaic cell of automatic light source | |
| CN208723854U (en) | Solar energy photovoltaic system | |
| CN108400192A (en) | A method of improving photovoltaic efficiency | |
| CN203270026U (en) | Graphite frame | |
| Lin et al. | A compact and high-power silicon-wafer solar strip-cells-array module integrated with an array concentrator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |