CN107588736A - A kind of measuring method and device of storage medium thickness - Google Patents
A kind of measuring method and device of storage medium thickness Download PDFInfo
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- CN107588736A CN107588736A CN201710774186.XA CN201710774186A CN107588736A CN 107588736 A CN107588736 A CN 107588736A CN 201710774186 A CN201710774186 A CN 201710774186A CN 107588736 A CN107588736 A CN 107588736A
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Abstract
The embodiment of the present application discloses a kind of measuring method of storage medium thickness, and this method includes：Actual measure spectrum is obtained, the actual measure spectrum is the spectrum that storage medium to be measured collects after actual light source is irradiated；According to the actual measure spectrum, first object sample spectrum is found from the sample spectrum storehouse pre-established, wherein, the sample spectrum storehouse includes sample spectrum corresponding to different sample storage mediums, the regression fit goodness highest between the first object sample spectrum and the actual measure spectrum；According to the thickness value of sample storage medium corresponding to the first object sample spectrum, the thickness value of the storage medium to be measured is determined.It can be seen that, the application can be eliminated after actual measure spectrum is got, also need to be modeled for the storage medium to be measured, assignment and regression fit calculate, so as to shorten the time of measuring of storage medium thickness, and then also shortened dispatching from the factory the cycle for storage medium.
Description
Technical field
The application is related to field of storage mediums, more particularly to a kind of measuring method and device of storage medium thickness.
Background technology
Computer flash memory device (NAND flash memory, abbreviation NAND), such as 3D NAND, plane NAND etc. are deposited
Storage media, the dielectric film of even up to a hundred layers of precipitation number pair is required to as memory cell, wherein, one layer of dielectric film can wrap
Multilayer material layer is included, such as, material layer is layer of silicon dioxide and one layer of silicon nitride.Be typically due to the thickness of storage medium for
The electrical property of subsequent technique and device is of crucial importance, therefore, it is necessary to the thickness of storage medium is measured.
At present, the method for being based primarily upon real-time regression fitting is calculated the thickness of storage medium.When measurement storage is situated between
During one layer of dielectric film in matter, the time that this layer of dielectric film usually requires 10 seconds is calculated, and because a piece of storage medium is led to
Often include dielectric multi-layer optical thin film, therefore, it is necessary to measured respectively to the thickness of each layer of dielectric film in storage medium,
For example a piece of 12 inches of storage medium usually requires nearly 3 minutes.Clearly as conventional planar NAND manufacturing process intermediary
Matter film only has several layers, and the thickness of the method computer storage media based on real-time regression fitting is more applicable.But due to 3D
The storage medium for including dozens or even hundreds of layer dielectric film is needed in NAND manufacturing process, compared with conventional planar NAND medium
The film number of plies is more, calculates that the rate request of the storage medium is higher, and this is deposited according to based on the method that real-time regression is fitted
Storage media thickness measures, and can cause the overlong time for calculating the storage medium thickness, excessive in the measurement board consuming time,
Extend dispatching from the factory the cycle for storage medium.
The content of the invention
The main purpose of the application is to provide a kind of measuring method and device of storage medium thickness, can shorten storage
The time of measuring of dielectric thickness.
In order to solve the above-mentioned technical problem, in a first aspect, this application provides a kind of measuring method of storage medium thickness,
This method includes：
Actual measure spectrum is obtained, the actual measure spectrum is that storage medium to be measured gathers after actual light source is irradiated
The spectrum arrived；
According to the actual measure spectrum, first object sample spectrum is found from the sample spectrum storehouse pre-established, its
In, the sample spectrum storehouse includes sample spectrum corresponding to different sample storage mediums, the first object sample spectrum and institute
State the regression fit goodness highest between actual measure spectrum；
According to the thickness value of sample storage medium corresponding to the first object sample spectrum, the storage to be measured is determined
The thickness value of medium.
Optionally, the sample spectrum storehouse includes one group of sample spectrum cluster corresponding at least a kind of storage medium, wherein, institute
The material property stated between the sample storage medium that every class storage medium includes is identical, per the material property between class storage medium
It is different；
It is described according to the actual measure spectrum, found in the sample spectrum stored from the sample spectrum storehouse pre-established
Before first object sample spectrum, in addition to：
Determine the real material characteristic of the medium to be measured；
Then, it is described according to the actual measure spectrum, in the sample spectrum stored from the sample spectrum storehouse pre-established
First object sample spectrum is found, including：
Inquiry and the real material characteristic identical sample storage medium from the actual sample library of spectra；
The first object sample spectrum is found from sample spectrum cluster corresponding to the sample storage medium.
Optionally, the sample storage medium of different-thickness is included in the sample spectrum storehouse per class storage medium；The sample
Sample spectrum forming process in this library of spectra includes：
The model parameter of storage medium model is obtained, the model parameter includes the dielectric film number of plies, every layer of dielectric film
Material composition and the material thickness；
Sample spectrum is obtained, the sample spectrum is the light that the storage medium model collects after analog light source irradiates
Spectrum.
Optionally, the thickness value of sample storage medium corresponding to each sample spectrum is also stored in sample spectrum storehouse；
The thickness value of the sample storage medium according to corresponding to the first object sample spectrum, is determined described to be measured
The thickness value of storage medium, including：
The thickness value of sample storage medium corresponding to the first object sample spectrum is obtained from the sample spectrum storehouse；
According to the thickness value of sample storage medium corresponding to the first object sample spectrum, the storage to be measured is determined
The thickness value of medium.
Optionally, the thickness value of the sample storage medium according to corresponding to the first object sample spectrum, determines institute
The thickness value of storage medium to be measured is stated, including：
By the thickness value of sample storage medium corresponding to the first object sample spectrum, it is situated between as the storage to be measured
The thickness value of matter；
Or,
According to the actual measure spectrum, the second target sample spectrum, institute are found from the sample spectrum storehouse pre-established
State the regression fit goodness between the second target sample spectrum and the actual measure spectrum and be only second to the first object sample
Regression fit goodness between spectrum and the actual measure spectrum；
According to the thickness value of sample storage medium corresponding to the first object sample spectrum and second target sample
The thickness value of sample storage medium corresponding to spectrum, determine the thickness value of the storage medium to be measured.
The embodiment of the present application additionally provides a kind of measurement apparatus of storage medium thickness, and the device includes：
Measure spectrum acquiring unit, for obtaining actual measure spectrum, the actual measure spectrum is situated between for storage to be measured
The spectrum that matter collects after actual light source is irradiated；
Sample spectrum searching unit, for according to the actual measure spectrum, being looked for from the sample spectrum storehouse pre-established
To first object sample spectrum, wherein, the sample spectrum storehouse includes sample spectrum corresponding to different sample storage mediums, described
Regression fit goodness highest between first object sample spectrum and the actual measure spectrum；
Thickness value determining unit, the thickness for the sample storage medium according to corresponding to the first object sample spectrum
Value, determine the thickness value of the storage medium to be measured.
Optionally, the sample spectrum storehouse includes one group of sample spectrum cluster corresponding at least a kind of storage medium, wherein, institute
The material property stated between the sample storage medium that every class storage medium includes is identical, per the material property between class storage medium
It is different；
Described device also includes：
Material property determining unit, for determining the real material characteristic of the medium to be measured；
Then, the sample spectrum searching unit includes：
Sample storage medium inquires about subelement, special for the inquiry from the actual sample library of spectra and the real material
Property identical sample storage medium；
Sample spectrum searches subelement, for finding described the from sample spectrum cluster corresponding to the sample storage medium
One target sample spectrum.
Optionally, the sample storage medium of different-thickness is included in the sample spectrum storehouse per class storage medium；The dress
Putting also includes：
Model parameter acquiring unit, for obtaining the model parameter of storage medium model, the model parameter includes medium
The film number of plies, the material of every layer of dielectric film forms and the thickness of the material；
Sample spectrum acquiring unit, for obtaining sample spectrum, the sample spectrum is the storage medium model through mould
Intend the spectrum collected after light source irradiation.
Optionally, the thickness value of sample storage medium corresponding to each sample spectrum is also stored in sample spectrum storehouse；
The thickness value determining unit includes：
Thickness value obtains subelement, for being obtained from the sample spectrum storehouse corresponding to the first object sample spectrum
The thickness value of sample storage medium；
First thickness value determination subelement, for the sample storage medium according to corresponding to the first object sample spectrum
Thickness value, determine the thickness value of the storage medium to be measured.
Optionally, the thickness value determining unit includes：
Second thickness value determination subelement, for by the thickness of sample storage medium corresponding to the first object sample spectrum
Angle value, the thickness value as the storage medium to be measured；
Or,
Sample spectrum searches subelement, for according to the actual measure spectrum, from the sample spectrum storehouse pre-established
Find the second target sample spectrum, the regression fit goodness between the second target sample spectrum and the actual measure spectrum
The regression fit goodness being only second between the first object sample spectrum and the actual measure spectrum；
3rd thickness value determination subelement, for the sample storage medium according to corresponding to the first object sample spectrum
The thickness value of sample storage medium, determines the storage medium to be measured corresponding to thickness value and the second target sample spectrum
Thickness value.
By the application it can be seen from above-mentioned technical proposal during thickness measure is carried out to storage medium, get
After the actual measure spectrum that storage medium to be measured collects after actual light source is irradiated, it is only necessary to from the sample light pre-set
Spectrum is found and the regression fit goodness highest target sample spectrum between the actual measure spectrum in storehouse, you can according to the target
Thickness value corresponding to sample spectrum determines the thickness value of the storage medium to be measured, eliminates and is getting actual measure spectrum
Afterwards, it is also necessary to be modeled for the storage medium to be measured, the calculating of assignment and regression fit, so as to shorten storage medium
The time of measuring of thickness, and then also shortened dispatching from the factory the cycle for storage medium.
Brief description of the drawings
, below will be to embodiment or existing in order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of application, for those of ordinary skill in the art, without having to pay creative labor, may be used also
To obtain other accompanying drawings according to these accompanying drawings.
Fig. 1 is a kind of method flow diagram of the measuring method for storage medium thickness that the embodiment of the present application provides；
Fig. 2 is a kind of measuring method schematic flow sheet for storage medium thickness that the embodiment of the present application provides；
Fig. 3 is a kind of exemplary plot for collection spectrum being collected into that the embodiment of the present application provides；
Fig. 4 is a kind of regression fit goodness schematic diagram that the embodiment of the present application provides；
Fig. 5 is a kind of forming process schematic diagram in sample spectrum storehouse that the embodiment of the present application provides；
Fig. 6 is a kind of composition schematic diagram of the measurement apparatus for storage medium thickness that the embodiment of the present application provides.
Embodiment
Below in conjunction with the accompanying drawings, embodiments herein is described.
The thickness measure mode of traditional storage medium is measured based on the method for real-time regression fitting.At this
In traditional approach, when the thickness using the method based on real-time regression fitting to each layer of dielectric film in storage medium to be measured
Degree after the spectrum of storage medium to be measured is collected, establishes storage medium model when measuring, to be measured needing to measure this
When measuring each layer of dielectric film in storage medium, it is required to set each layer of dielectric film in the storage medium model respectively
Different thickness values is put, and obtains the spectrum that the storage medium model collects after analog light source irradiates, be i.e. assignment each time
After be required for carrying out a regression fit, so as to get the spectrum corresponding to current assignment, if the spectrum and the light collected
Fitting degree is relatively low between spectrum, then needs assignment again and carry out regression fit, if between the spectrum and the spectrum collected
Regression fit goodness is higher, then it is considered that being currently for the thickness assignment of each layer of dielectric film in storage medium model
For the corresponding thickness of each layer of dielectric film in storage medium to be measured, so as to obtain the thickness of storage medium to be measured.
Applicant it has been investigated that, using above-mentioned traditional approach to the thickness measure of storage medium during, it is each
After each layer of dielectric film in the secondary model to storage medium carries out assignment, it is required for re-starting regression fit, so, can leads
The time for calculating every layer of dielectric film thickness is caused to increase., can significantly when needing to measure the dielectric film of dozens or even hundreds of layer
Increase the time of computer storage media.
Therefore, the embodiment of the present application proposes a kind of measuring method and device of storage medium thickness, to want to contract
The time of measuring of short storage medium thickness, and then shorten dispatching from the factory the cycle for storage medium.
It is first right before the embodiment of the present application is introduced for the technical scheme of more clear and complete description the application
The basic conception of storage medium is introduced.
Storage medium is the carrier of data storage, can be stacked and formed by dielectric multi-layer optical thin film, wherein, one layer of dielectric film
Multilayer material layer can be included, and the thickness of each material layer in the multilayer material layer can be different, such as one layer of Jie
Matter film can include two layers of material, and respectively a layer thickness is 1nm silica, and a layer thickness is 2nm silicon nitride,
Certainly, the thickness of each material layer in the multilayer material layer can also be identical, for example one layer of dielectric film can include
Two layers of material, respectively a layer thickness are 1nm silica, and a layer thickness is 1nm silicon nitride.
It should be noted that in a piece of storage medium, material layer composition structure in each layer of dielectric film and
The thickness of each material layer is all identical, for example, a piece of storage medium includes 100 layers of dielectric film, each layer of medium is thin
Film all includes two layers of material, wherein, the first layer of material is silica, and its thickness is also 1nm, and second layer material
The bed of material is silicon nitride, and its thickness is also 2nm.
To shorten the time of measuring of storage medium thickness, sample spectrum storehouse is introduced in the embodiment of the present application, the sample light
Spectrum storehouse is pre-established before storage medium to be measured is measured, and a sample light is at least stored in the sample spectrum storehouse
Spectrum.
Because each sample spectrum in the sample spectrum storehouse is through same reality according to different sample storage mediums
Collected after the light source irradiation of border, wherein, the dielectric film number of plies of these sample storage mediums, the material composition of dielectric film
And/or material thickness differs.Therefore, each sample spectrum in the sample spectrum storehouse is entirely different, and
And each sample spectrum can correspond to the thickness value of a piece of sample storage medium.It should be noted that the sample spectrum storehouse
In the forming process of sample spectrum will be specifically introduced later.
Next, by the measuring method schematic flow sheet of the storage medium thickness with reference to shown in Fig. 1 and Fig. 2, to illustrate
How the embodiment of the present application measures the thickness of storage medium.
Fig. 1 is a kind of method flow diagram of the measuring method for storage medium thickness that the embodiment of the present application provides, such as Fig. 1 institutes
Show, this method comprises the following steps：
S101：Obtain actual measure spectrum.
In the embodiment of the present application, actual measure spectrum can be first obtained, for example can enter using elliptically polarized light spectral technology
Row obtains, wherein, the spectrum that the actual measure spectrum collects for storage medium to be measured after actual light source is irradiated, i.e. Fig. 2
Shown step 201 and step 202.
Specifically, due to using during spectroscopic ellipsometry technical limit spacing spectrum, it is not necessary to which by cutting into slices, monitoring should
The thickness of storage medium, can be realized in the case where not destroying storage medium this body structure, and not damaged is carried out to storage medium
Monitoring.Therefore, can be first using specific light source (such as beam of white light) as incident light, and get to storage at an angle
On medium, after the incident light is reflected or transmitted by storage medium, the polarization state of the incident light changes, then, Ke Yigen
Situation about being changed according to the polarization state produces actual measure spectrum.
For example, for 3D NAND storage mediums, its actual measure spectrum can be gathered using spectroscopic ellipsometry machine.Can
To set light source as beam of white light, incident angle is 65 degree, and operated by being divided and taking pictures etc., collects piece 3D NAND
Spectrum of the storage medium after light source irradiation.
It should be noted that spectrum involved in the embodiment of the present application is the spectroscopic ellipsometry of two dimension, its horizontal seat
Optical wavelength is designated as, ordinate is spectral signal intensity, and the exemplary plot for the collection spectrum being specifically collected into is shown in Figure 3.
S102：According to the actual measure spectrum, first object sample light is found from the sample spectrum storehouse pre-established
Spectrum, wherein, the sample spectrum storehouse includes sample spectrum corresponding to different sample storage mediums, the first object sample spectrum
Regression fit goodness highest between the actual measure spectrum.
After performing S101, actual measure spectrum can be got, then by the actual measure spectrum with pre-establishing
Sample spectrum storehouse in each sample spectrum storing compared one by one, such as can by the actual measure spectrum with it is each
Bar sample spectrum is fitted one by one, and determines the actual measure spectrum and each sample stored in the sample spectrum storehouse
Regression fit goodness between spectrum.
It should be noted that the regression fit goodness between two spectrum can be used to indicate that it is similar between two spectrum
Degree, and the numerical value of the regression fit goodness is 0 to 1, wherein, the numerical value of the regression fit goodness is bigger, represents this two light
Similarity degree between spectrum is higher, conversely, the numerical value of the regression fit goodness is smaller, represents the similar journey between this two spectrum
Degree is lower.For example when the numerical value of the regression fit goodness between two spectrum is 0, illustrate this two spectrum similarity degree poles
Low, i.e., this two spectrum are entirely different；When the numerical value of the regression fit goodness between two spectrum is 1, illustrate this two light
Compose similarity degree it is high, i.e., this two spectrum be almost as.
Therefore, in the embodiment of the present application, actual measure spectrum and each galley proof stored in sample spectrum storehouse are determined
After regression fit goodness between this spectrum, in sample spectrum that can be all from the sample spectrum, determine and the reality
Regression fit goodness highest sample spectrum between measure spectrum, and using the sample spectrum as first object sample spectrum,
Step 203 i.e. shown in Fig. 2.That is, the first object sample spectrum and other sample spectrums in the sample spectrum storehouse
Comparatively speaking, the first object sample spectrum and the similarity degree of the actual measure spectrum are highests.
Next, specific introduce each sample spectrum for how determining actual measure spectrum and being stored in sample spectrum storehouse
Between regression fit goodness.
Specifically, can first by actual measure spectrum successively with each point in each sample spectrum corresponding to spectral signal
It is poor that intensity level is made, wherein, the corresponding optical wavelength of each point is identical.Then, by the actual measure spectrum and each
The work difference result of sample spectrum is summed, or is averaged.Then, according to corresponding to all sample spectrums and it is or flat
The size of average is regression fit goodness corresponding to each sample spectrum distributes respectively, wherein, the numerical value of regression fit goodness
Scope is 0 to 1.
For ease of understanding, it is illustrated in conjunction with Fig. 4 and how determines actual measure spectrum with being deposited in sample spectrum storehouse
Regression fit goodness between each sample spectrum of storage.
Assuming that 99 sample spectrums are stored with sample spectrum storehouse.By actual measure spectrum A successively with this 99 sample lights
Spectral signal intensity level corresponding to each point is made poor in each sample spectrum in spectrum, and by the actual measure spectrum A and often
The work difference result of one sample spectrum is averaged.Then, by the average value corresponding to this 99 sample spectrums from greatly to
Small sequence, and be regression fit goodness corresponding to each sample spectrum distributes respectively according to ranking results.Such as sample spectrum
Average value corresponding to B comes the 28th in this 99 articles of sample spectrums, so regression fit goodness corresponding to sample spectrum B can
Think 0.72；Average value corresponding to sample spectrum C comes the 15th in this 99 articles of sample spectrums, so B pairs of the sample spectrum
The regression fit goodness answered can be 0.85；Average value corresponding to sample spectrum D comes the 1st in this 99 articles of sample spectrums,
So regression fit goodness corresponding to sample spectrum B can be 0.99.Obviously, regression fit corresponding to sample spectrum B is excellent
Degree is highest in regression fit goodness corresponding to this 99 sample spectrums, it is believed that sample spectrum B and the actual survey
The similarity degree for measuring spectrum A is highest, therefore, can be using sample spectrum B as first object sample spectrum.
S103：According to the thickness value of sample storage medium corresponding to the first object sample spectrum, determine described to be measured
Measure the thickness value of storage medium.
After performing S102, it may be determined that go out first object sample spectrum, then, the first object sample can be obtained
Thickness value corresponding to spectrum.In a kind of embodiment of the application, each sample light can also be stored in sample spectrum storehouse
The corresponding relation of sample spectrum and thickness value, and each sample light are stored in thickness value corresponding to spectrum, i.e. the sample spectrum storehouse
Spectrum corresponds to a thickness value.Therefore, sample corresponding to the first object sample spectrum can be obtained from the sample spectrum storehouse
The thickness value of storage medium, such as, can be corresponding with a thickness value using first object sample spectrum in sample spectrum storehouse
Relational query goes out the thickness value corresponding to the first object sample spectrum.
After thickness value corresponding to first object sample spectrum is determined, due to the first object sample spectrum and actual survey
Measure the regression fit goodness highest between spectrum, the i.e. similarity degree of the first object sample spectrum and the actual measure spectrum most
It is high.It is therefore contemplated that the thickness value corresponding with the actual measure spectrum of thickness value corresponding to the first object sample spectrum is (i.e.
The thickness value of storage medium to be measured) very close to, in some instances it may even be possible to it is equivalent.
So can be by the thickness value of sample storage medium corresponding to first object sample spectrum, as storage to be measured
The thickness value of medium, i.e. step 204 shown in Fig. 2.Such as if returning between first object sample spectrum and actual measure spectrum
When returning the numerical value of the goodness of fit almost close to 1, it is believed that the thickness of sample storage medium corresponding to the first object sample spectrum
Angle value is almost equal with the thickness value of storage medium to be measured, at this point it is possible to by sample corresponding to the first object sample spectrum
Thickness value of the thickness value of storage medium as the storage medium to be measured.
In order to which the thickness value of storage medium to be measured is more precisely determined, in a kind of embodiment of the application,
" according to thickness value corresponding to the first object sample spectrum, the thickness of the storage medium to be measured is determined in above-mentioned S103
The step of angle value ", can include：According to actual measure spectrum, the second target sample is found from the sample spectrum storehouse pre-established
Spectrum, according to the thickness value of sample storage medium corresponding to the first object sample spectrum and the second target sample spectrum
The thickness value of corresponding sample storage medium, determine the thickness value of the storage medium to be measured.
Wherein, the regression fit goodness between the second target sample spectrum and actual measure spectrum can be only second to this first
Regression fit goodness between target sample spectrum and the actual measure spectrum.So, using between the actual measure spectrum
Higher two sample spectrums of regression fit goodness, the thickness value for the storage medium to be measured determined is more accurate.
In the present embodiment, can first will be real after determining first object sample spectrum and the second target sample spectrum
Border measure spectrum successively with each point in the first object sample spectrum, the second target sample spectrum corresponding to spectral signal it is strong
It is poor that angle value is made, wherein, the corresponding optical wavelength of each point is identical.Then, by the actual measure spectrum and first mesh
Mark sample spectrum, the work difference result of the second target sample spectrum are summed, or averaged.Then, according to above-mentioned meter
Calculation method, calculate the work difference result and/or average value of the first object sample spectrum and the second target sample spectrum.
And then, the first object sample spectrum is obtained from sample spectrum storehouse, corresponding to the second target sample spectrum
The thickness value of sample storage medium, and according to the actual measure spectrum and the first object sample spectrum, second target sample
The work difference result and/or average value of spectrum, and the work difference of the first object sample spectrum and the second target sample spectrum are tied
Fruit and/or between average value numerical relation, such as numerical values recited ratio.So as to using the first object sample spectrum, this
The thickness value of each self-corresponding sample storage medium of two target sample spectrum, determine that storage to be measured is situated between according to the numerical relation
The thickness value of matter.
For ease of understanding, the thickness of the sample storage medium according to corresponding to first object sample spectrum is now illustrated how to
The thickness value of sample storage medium corresponding to value and the second target sample spectrum, determine the thickness value of storage medium to be measured.
It is assumed that in first object sample spectrum the spectral signal intensity of each point be all higher than it is each in actual measure spectrum
Point, i.e. the first object sample spectrum are located at the top of the actual measure spectrum；And each point in the second target sample spectrum
Spectral signal intensity is respectively less than each point in the actual measure spectrum, i.e., the second target sample spectrum is located at the actual measurement
Spectrum it is following；Also, the actual measure spectrum and the work difference of the first object sample spectrum, the second target sample spectrum are tied
Fruit average value A, B are respectively 0.001,0.001, the work difference result of the first object sample spectrum and the second target sample spectrum
Average value C is 0.002；Make poor result average value A, B, C according to these three, it may be determined that go out between these three average values A, B, C
Numerical relation, as average value A, B is the 50% of average value C, hence, it can be determined that it is to be located to go out the actual measure spectrum
The centre position of the first object sample spectrum and the second target sample spectrum.Then, obtained from sample spectrum storehouse this
The thickness value of sample storage medium corresponding to one target sample spectrum, the second target sample spectrum is respectively 99nm, 101nm,
So as to according to the numerical relation, it may be determined that the thickness value for going out storage medium to be measured should be between the first object sample
Corresponding to spectrum, the second target sample spectrum among the thickness value of sample storage medium, you can to determine that this to be measured is deposited
The thickness value of storage media is 100nm.
It can be seen that in the embodiment of the present application, can be got to be measured during thickness measure is carried out to storage medium
After the actual measure spectrum that storage medium collects after actual light source is irradiated, it is only necessary to from the sample spectrum storehouse pre-set
Find and the regression fit goodness highest first object sample spectrum between the actual measure spectrum, you can according to first mesh
Thickness value corresponding to mark sample spectrum determines the thickness value of the storage medium to be measured, eliminates and is getting actual measurement light
After spectrum, it is also necessary to be modeled for the storage medium to be measured, the calculating of assignment and regression fit, be situated between so as to shorten storage
The time of measuring of matter thickness, and then also shortened dispatching from the factory the cycle for storage medium.
To shorten the time that first object sample spectrum is found from sample spectrum storehouse, it is situated between further to shorten storage
The time of measuring of matter thickness, at least a kind of storage can be included in a kind of embodiment of the application, in sample spectrum storehouse and is situated between
One group of sample spectrum cluster corresponding to matter, wherein, the material property between the sample storage medium included per class storage medium is identical,
It is different per the material property between class storage medium.In the case, before above-mentioned S102, can also comprise the following steps：
Determine the real material characteristic of the medium to be measured.Now, above-mentioned S102 can be to be inquired about from the actual sample library of spectra
With the real material characteristic identical sample storage medium, then found from sample spectrum cluster corresponding to the sample storage medium
First object sample spectrum.
In the embodiment of the present application, material property identical sample storage medium can be classified as one kind, for example, can will be every
Material layer is that the storage medium of silica and silicon nitride is classified as one kind in layer dielectric film, wherein, per class storage medium it
Between material property differ.It is according to difference accordingly, due to each sample spectrum in the sample spectrum storehouse
Sample storage medium collected after the irradiation of same actual light source, therefore, can be by same class storage medium through same reality
The sample spectrum collected after the light source irradiation of border is classified as one kind, and for the ease of description, such sample spectrum is referred to as into one group of sample
This spectrum cluster.So, one group of sample spectrum cluster corresponding at least a kind of storage medium can be included in the sample spectrum storehouse.
, therefore, in one implementation, can be first true due to comprising at least one group of sample spectrum cluster in sample spectrum storehouse
The real material characteristic of fixed medium to be measured, for example medium to be measured can be determined according to the actual measure spectrum got
Real material characteristic.Then, according to the real material feature of the medium to be measured, inquired from the actual sample library of spectra with
The real material characteristic identical sample storage medium, and found out using the sample storage medium corresponding to the sample storage medium
Sample spectrum cluster, then find first object sample spectrum from the sample spectrum in the sample spectrum cluster.Require emphasis
It is that in the present embodiment, the method for searching first object sample spectrum is similar to above-mentioned S102, may refer to the portion in above-mentioned S102
Defend oneself bright.
It can be seen that in the embodiment of the present application, due to that can include one corresponding at least a kind of storage medium in sample spectrum storehouse
Group sample spectrum cluster, hence, it can be determined that the real material characteristic of medium to be measured, is then looked into from the actual sample library of spectra
Inquiry and the real material characteristic identical sample storage medium, are then looked for from sample spectrum cluster corresponding to the sample storage medium
To first object sample spectrum.It can be seen that in the present embodiment, it is not necessary to by all samples in actual measure spectrum and sample spectrum storehouse
This spectrum is contrasted one by one, it is only necessary to by the actual measure spectrum, with real material characteristic identical sample storage medium
All sample spectrums in corresponding sample spectrum cluster are compared, and so, reduce actual measure spectrum and sample
The contrast number of sample spectrum in library of spectra, so as to shorten found from sample spectrum storehouse first object sample spectrum when
Between, and then shorten the time of measuring of storage medium thickness.
Next, will specifically be introduced in the embodiment of the present application with reference to Fig. 5, the sample spectrum in sample spectrum storehouse be as
What what was formed.
In a kind of embodiment of the application, the sample of different-thickness can be included in sample spectrum storehouse per class storage medium
This storage medium, in the case, the sample spectrum forming process in the sample spectrum storehouse may comprise steps of：First obtain
The model parameter of storage medium model, then obtains sample spectrum, wherein, the sample spectrum is the storage medium model through mould
Intend the spectrum collected after light source irradiation.
First, the model parameter of storage medium model is obtained, the model parameter can include the dielectric film number of plies, every layer of Jie
The material composition of matter film and the thickness of each material.
Wherein, the dielectric film number of plies in the storage medium model can be the numerical value or a number pre-set
The dielectric film number of plies being worth in scope, such as the storage medium model can be with the dielectric film number of plies in storage medium to be measured
It is identical, when the dielectric film number of plies in the measurement storage medium is 100 layers, the dielectric film number of plies in the storage medium model
Also it is all 100 layers, but the number range of the dielectric film number of plies in the such as storage medium model can be [100,103], i.e.,
The storage medium model that the dielectric film number of plies is 100 layers, the storage medium mould that the dielectric film number of plies is 101 layers can be established respectively
Type, the storage media model that the dielectric film number of plies is 102 layers and storage medium model that the dielectric film number of plies is 103 layers.
The material composition of every layer of dielectric film in the storage medium model can be the material category pre-set, and
Different permutation and combination can be carried out according to the material category, situation is formed so as to obtain a variety of different materials.For example, it is assumed that
The material category pre-set is silica and silicon nitride, then can be with the material of every layer of dielectric film in storage medium model
Composition can be only silica, may also be only silicon nitride, can also be silica and silicon nitride.
Each material thickness of every layer of dielectric film can also be pre-set in the storage medium model, such as each material
Expect that thickness can be the number range pre-set, multiple thickness values can be arbitrarily determined in the number range to carry out
Modeling, multiple thickness values can also be determined to be modeled with a fixed numbers unit, for example, when the numerical value of a material thickness
, can be respectively using thickness as storage medium mould corresponding to 0.1nm, 0.2nm, 0.4nm when scope is [0.1,0.5] (unit nm)
Type models, and can also come respectively by storage medium model corresponding to 0.1nm, 0.2nm, 0.3nm, 0.4nm, 0.5nm of thickness
Modeling.
Then, the thickness of each material can be carried out to different combinations, so as to obtain multiple different material thickness groups
Close, for example, it is assumed that the material category pre-set is silica and silicon nitride, the wherein thickness of silica can be
0.1nm, 0.2nm, the thickness of silicon nitride can be 0.1nm, 0.2nm, and the thickness value of both materials is carried out to different combinations,
So as to obtain four kinds of material thickness combinations：The thickness of silica be 0.1nm and the thickness of silicon nitride be 0.1nm, dioxy
The thickness of SiClx be 0.1nm and the thickness of silicon nitride be 0.2nm, the thickness of silica is 0.2nm and the thickness of silicon nitride is
0.1nm, the thickness of silica are 0.2nm and the thickness of silicon nitride is 0.2nm.
It should be noted that the value quantity of each material thickness is more, value is closer, then the sample in sample spectrum storehouse
This spectrum quantity is more, and the regression fit goodness between sample spectrum in sample spectrum storehouse and actual measure spectrum is higher,
Sample spectrum i.e. in sample spectrum storehouse is finer, and can be higher with the similarity degree of actual measure spectrum.
Secondly, after the model parameter of storage medium model is got, according to the model parameter to the storage medium model
Carry out parameter setting, i.e. step 501 shown in Fig. 5.Then, by the storage medium model set after analog light source irradiates
Sample spectrum, i.e. step 502 shown in Fig. 5 corresponding to the storage medium model are collected, wherein, the light source strip of the analog light source
Part and the light conditions of actual light source can be duplicate.Specifically, can foundation during collecting sample spectrum
The theoretical optics analytic equation of Fresnel:St(λ)=F (ti,ni,ki) obtain light of the storage medium model in different wave length λ
Under irradiation, corresponding spectral signal strength St, so as to get the sample of the storage medium model after analog light source irradiates
Spectrum, wherein, tiFor every layer of dielectric film thickness in the storage medium, niFor the light refractive index of the dielectric film, kiFor this
The absorptivity of dielectric film, i represent the film number of plies of storage medium.Certainly, each storage medium model is being got correspondingly
Sample spectrum after, these sample spectrums can be put together, composition sample spectrum storehouse, i.e. step 503 shown in Fig. 5.
Referring to Fig. 6, a kind of composition schematic diagram of the measurement apparatus of the storage medium thickness provided for the embodiment of the present application should
Device includes：
Measure spectrum acquiring unit 601, for obtaining actual measure spectrum, the actual measure spectrum is storage to be measured
The spectrum that medium collects after actual light source is irradiated；
Sample spectrum searching unit 602, for according to the actual measure spectrum, from the sample spectrum storehouse pre-established
First object sample spectrum is found, wherein, the sample spectrum storehouse includes sample spectrum corresponding to different sample storage mediums, institute
State the regression fit goodness highest between first object sample spectrum and the actual measure spectrum；
Thickness value determining unit 603, the thickness for the sample storage medium according to corresponding to the first object sample spectrum
Angle value, determine the thickness value of the storage medium to be measured.
Optionally, the sample spectrum storehouse includes one group of sample spectrum cluster corresponding at least a kind of storage medium, wherein, institute
The material property stated between the sample storage medium that every class storage medium includes is identical, per the material property between class storage medium
It is different；
Described device also includes：
Material property determining unit, for determining the real material characteristic of the medium to be measured；
Then, the sample spectrum searching unit 602 includes：
Sample storage medium inquires about subelement, special for the inquiry from the actual sample library of spectra and the real material
Property identical sample storage medium；
Sample spectrum searches subelement, for finding described the from sample spectrum cluster corresponding to the sample storage medium
One target sample spectrum.
Optionally, the sample storage medium of different-thickness is included in the sample spectrum storehouse per class storage medium；The dress
Putting also includes：
Model parameter acquiring unit, for obtaining the model parameter of storage medium model, the model parameter includes medium
The film number of plies, the material of every layer of dielectric film forms and the thickness of the material；
Sample spectrum acquiring unit, for obtaining sample spectrum, the sample spectrum is the storage medium model through mould
Intend the spectrum collected after light source irradiation.
Optionally, the thickness value of sample storage medium corresponding to each sample spectrum is also stored in sample spectrum storehouse；
The thickness value determining unit 603 includes：
Thickness value obtains subelement, for being obtained from the sample spectrum storehouse corresponding to the first object sample spectrum
The thickness value of sample storage medium；
First thickness value determination subelement, for the sample storage medium according to corresponding to the first object sample spectrum
Thickness value, determine the thickness value of the storage medium to be measured.
Optionally, the thickness value determining unit 603 includes：
Second thickness value determination subelement, for by the thickness of sample storage medium corresponding to the first object sample spectrum
Angle value, the thickness value as the storage medium to be measured；
Or,
Sample spectrum searches subelement, for according to the actual measure spectrum, from the sample spectrum storehouse pre-established
Find the second target sample spectrum, the regression fit goodness between the second target sample spectrum and the actual measure spectrum
The regression fit goodness being only second between the first object sample spectrum and the actual measure spectrum；
3rd thickness value determination subelement, for the sample storage medium according to corresponding to the first object sample spectrum
The thickness value of sample storage medium, determines the storage medium to be measured corresponding to thickness value and the second target sample spectrum
Thickness value.
One of ordinary skill in the art will appreciate that：Realizing all or part of step of above method embodiment can pass through
Programmed instruction related hardware is completed, and foregoing routine can be stored in a computer read/write memory medium, and the program exists
During execution, execution the step of including above method embodiment；And foregoing storage medium can be in following media at least one
Kind：Read-only storage (English：Read-only memory, abbreviation：ROM), RAM, magnetic disc or CD etc. are various to store
The medium of program code.
It should be noted that each embodiment in this specification is described by the way of progressive, each embodiment it
Between identical similar part mutually referring to what each embodiment stressed is the difference with other embodiment.
For equipment and system embodiment, because it is substantially similar to embodiment of the method, so describe fairly simple,
The relevent part can refer to the partial explaination of embodiments of method.Equipment and system embodiment described above is only schematic
, wherein as the unit that separating component illustrates can be or may not be physically separate, be shown as unit
Part can be or may not be physical location, you can with positioned at a place, or can also be distributed to multiple networks
On unit.Some or all of module therein can be selected to realize the purpose of this embodiment scheme according to the actual needs.
Those of ordinary skill in the art are without creative efforts, you can to understand and implement.
It is described above, only a kind of embodiment of the application, but the protection domain of the application is not limited thereto,
Any one skilled in the art is in the technical scope that the application discloses, the change or replacement that can readily occur in,
It should all cover within the protection domain of the application.Therefore, the protection domain of the application should be with scope of the claims
It is defined.
Claims (10)
1. a kind of measuring method of storage medium thickness, it is characterised in that methods described includes：
Actual measure spectrum is obtained, the actual measure spectrum storage medium to be measured collects after actual light source is irradiated
Spectrum；
According to the actual measure spectrum, first object sample spectrum is found from the sample spectrum storehouse pre-established, wherein, institute
Stating sample spectrum storehouse includes sample spectrum corresponding to different sample storage mediums, the first object sample spectrum and the reality
Regression fit goodness highest between measure spectrum；
According to the thickness value of sample storage medium corresponding to the first object sample spectrum, the storage medium to be measured is determined
Thickness value.
2. according to the method for claim 1, it is characterised in that the sample spectrum storehouse includes at least a kind of storage medium pair
The one group of sample spectrum cluster answered, wherein, the material property between the sample storage medium included per class storage medium is identical,
It is different per the material property between class storage medium；
It is described according to the actual measure spectrum, find first in the sample spectrum stored from the sample spectrum storehouse pre-established
Before target sample spectrum, in addition to：
Determine the real material characteristic of the medium to be measured；
Then, it is described according to the actual measure spectrum, found in the sample spectrum stored from the sample spectrum storehouse pre-established
First object sample spectrum, including：
Inquiry and the real material characteristic identical sample storage medium from the actual sample library of spectra；
The first object sample spectrum is found from sample spectrum cluster corresponding to the sample storage medium.
3. method according to claim 1 or 2, it is characterised in that include in the sample spectrum storehouse per class storage medium
The sample storage medium of different-thickness；Sample spectrum forming process in the sample spectrum storehouse includes：
The model parameter of storage medium model is obtained, the model parameter includes the dielectric film number of plies, the material of every layer of dielectric film
The thickness of material composition and the material；
Sample spectrum is obtained, the sample spectrum is the spectrum that the storage medium model collects after analog light source irradiates.
4. according to the method for claim 1, it is characterised in that also stored corresponding to each sample spectrum in sample spectrum storehouse
The thickness value of sample storage medium；
The thickness value of the sample storage medium according to corresponding to the first object sample spectrum, determines the storage to be measured
The thickness value of medium, including：
The thickness value of sample storage medium corresponding to the first object sample spectrum is obtained from the sample spectrum storehouse；
According to the thickness value of sample storage medium corresponding to the first object sample spectrum, the storage medium to be measured is determined
Thickness value.
5. the method according to claim 1 or 4, it is characterised in that described corresponding according to the first object sample spectrum
Sample storage medium thickness value, determine the thickness value of the storage medium to be measured, including：
By the thickness value of sample storage medium corresponding to the first object sample spectrum, as the storage medium to be measured
Thickness value；
Or,
According to the actual measure spectrum, the second target sample spectrum is found from the sample spectrum storehouse pre-established, described
Regression fit goodness between two target sample spectrum and the actual measure spectrum is only second to the first object sample spectrum
With the regression fit goodness between the actual measure spectrum；
According to the thickness value of sample storage medium corresponding to the first object sample spectrum and the second target sample spectrum
The thickness value of corresponding sample storage medium, determine the thickness value of the storage medium to be measured.
6. a kind of measurement apparatus of storage medium thickness, it is characterised in that described device includes：
Measure spectrum acquiring unit, for obtaining actual measure spectrum, the actual measure spectrum passes through for storage medium to be measured
The spectrum collected after actual light source irradiation；
Sample spectrum searching unit, for according to the actual measure spectrum, to be found from the sample spectrum storehouse pre-established
One target sample spectrum, wherein, the sample spectrum storehouse includes sample spectrum corresponding to different sample storage mediums, and described first
Regression fit goodness highest between target sample spectrum and the actual measure spectrum；
Thickness value determining unit, for the thickness value of the sample storage medium according to corresponding to the first object sample spectrum, really
The thickness value of the fixed storage medium to be measured.
7. device according to claim 6, it is characterised in that the sample spectrum storehouse includes at least a kind of storage medium pair
The one group of sample spectrum cluster answered, wherein, the material property between the sample storage medium included per class storage medium is identical,
It is different per the material property between class storage medium；
Described device also includes：
Material property determining unit, for determining the real material characteristic of the medium to be measured；
Then, the sample spectrum searching unit includes：
Sample storage medium inquires about subelement, for the inquiry from the actual sample library of spectra and the real material characteristic phase
Same sample storage medium；
Sample spectrum searches subelement, for finding first mesh from sample spectrum cluster corresponding to the sample storage medium
Mark sample spectrum.
8. the device according to claim 6 or 7, it is characterised in that include in the sample spectrum storehouse per class storage medium
The sample storage medium of different-thickness；Described device also includes：
Model parameter acquiring unit, for obtaining the model parameter of storage medium model, the model parameter includes dielectric film
The number of plies, the material of every layer of dielectric film forms and the thickness of the material；
Sample spectrum acquiring unit, for obtaining sample spectrum, the sample spectrum is the storage medium model through simulated light
The spectrum collected after the irradiation of source.
9. device according to claim 6, it is characterised in that also stored corresponding to each sample spectrum in sample spectrum storehouse
The thickness value of sample storage medium；
The thickness value determining unit includes：
Thickness value obtains subelement, for obtaining sample corresponding to the first object sample spectrum from the sample spectrum storehouse
The thickness value of storage medium；
First thickness value determination subelement, the thickness for the sample storage medium according to corresponding to the first object sample spectrum
Value, determine the thickness value of the storage medium to be measured.
10. the device according to claim 6 or 9, it is characterised in that the thickness value determining unit includes：
Second thickness value determination subelement, for by the thickness of sample storage medium corresponding to the first object sample spectrum
Value, the thickness value as the storage medium to be measured；
Or,
Sample spectrum searches subelement, for according to the actual measure spectrum, being found from the sample spectrum storehouse pre-established
Second target sample spectrum, the regression fit goodness between the second target sample spectrum and the actual measure spectrum are only secondary
Regression fit goodness between the first object sample spectrum and the actual measure spectrum；
3rd thickness value determination subelement, the thickness for the sample storage medium according to corresponding to the first object sample spectrum
The thickness value of sample storage medium corresponding to value and the second target sample spectrum, determine the thickness of the storage medium to be measured
Angle value.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276414A (en) * | 2020-02-03 | 2020-06-12 | 长江存储科技有限责任公司 | Detection method and device |
| CN111578848A (en) * | 2020-04-24 | 2020-08-25 | 中国电子科技集团公司第十三研究所 | Method and system for determining line width value of line width standard sample |
| CN111609800A (en) * | 2020-05-25 | 2020-09-01 | 中国电子科技集团公司第十三研究所 | Method for determining value of line width standard sample based on spectrum ellipsometer |
| CN111829442A (en) * | 2019-04-23 | 2020-10-27 | 株式会社迪思科 | Thickness measuring device |
| CN112833801A (en) * | 2021-02-05 | 2021-05-25 | 长鑫存储技术有限公司 | Thin film thickness test method, test system, storage medium, and electronic device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101865641A (en) * | 2010-03-05 | 2010-10-20 | 新奥光伏能源有限公司 | Method and device for measuring thickness of semiconductor film |
| CN102119418A (en) * | 2008-09-15 | 2011-07-06 | 松下电器产业株式会社 | Optical information medium measuring method, optical information medium, recording device and reproducing device |
| CN102506773A (en) * | 2011-09-28 | 2012-06-20 | 上海宏力半导体制造有限公司 | Method for detecting surface roughness of wafer |
| CN104792282A (en) * | 2015-04-21 | 2015-07-22 | 中国科学院光电技术研究所 | Method for determining surface roughness, optical constant and thickness of optical thin film simultaneously |
| CN106767454A (en) * | 2016-12-02 | 2017-05-31 | 大连海事大学 | A kind of water-surface oil film thickness measurement system and method based on spectral reflectivity feature |
-
2017
- 2017-08-31 CN CN201710774186.XA patent/CN107588736B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102119418A (en) * | 2008-09-15 | 2011-07-06 | 松下电器产业株式会社 | Optical information medium measuring method, optical information medium, recording device and reproducing device |
| CN101865641A (en) * | 2010-03-05 | 2010-10-20 | 新奥光伏能源有限公司 | Method and device for measuring thickness of semiconductor film |
| CN102506773A (en) * | 2011-09-28 | 2012-06-20 | 上海宏力半导体制造有限公司 | Method for detecting surface roughness of wafer |
| CN104792282A (en) * | 2015-04-21 | 2015-07-22 | 中国科学院光电技术研究所 | Method for determining surface roughness, optical constant and thickness of optical thin film simultaneously |
| CN106767454A (en) * | 2016-12-02 | 2017-05-31 | 大连海事大学 | A kind of water-surface oil film thickness measurement system and method based on spectral reflectivity feature |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111829442A (en) * | 2019-04-23 | 2020-10-27 | 株式会社迪思科 | Thickness measuring device |
| CN111276414A (en) * | 2020-02-03 | 2020-06-12 | 长江存储科技有限责任公司 | Detection method and device |
| CN111578848A (en) * | 2020-04-24 | 2020-08-25 | 中国电子科技集团公司第十三研究所 | Method and system for determining line width value of line width standard sample |
| CN111609800A (en) * | 2020-05-25 | 2020-09-01 | 中国电子科技集团公司第十三研究所 | Method for determining value of line width standard sample based on spectrum ellipsometer |
| CN111609800B (en) * | 2020-05-25 | 2022-03-08 | 中国电子科技集团公司第十三研究所 | Method for determining value of line width standard sample based on spectrum ellipsometer |
| CN112833801A (en) * | 2021-02-05 | 2021-05-25 | 长鑫存储技术有限公司 | Thin film thickness test method, test system, storage medium, and electronic device |
| CN112833801B (en) * | 2021-02-05 | 2022-04-05 | 长鑫存储技术有限公司 | Thin film thickness test method, test system, storage medium, and electronic device |
| CN114543690A (en) * | 2022-03-01 | 2022-05-27 | 上海精测半导体技术有限公司 | Optical characteristic modeling method, photoacoustic measurement method and device |
| CN114543690B (en) * | 2022-03-01 | 2024-04-12 | 上海精测半导体技术有限公司 | Modeling method of optical characteristics, photoacoustic measurement method and photoacoustic measurement device |
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