CN107564784A - A kind of enhanced light auxiliary field emitting electronic source based on hetero-junctions and preparation method thereof - Google Patents
A kind of enhanced light auxiliary field emitting electronic source based on hetero-junctions and preparation method thereof Download PDFInfo
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- CN107564784A CN107564784A CN201710550808.0A CN201710550808A CN107564784A CN 107564784 A CN107564784 A CN 107564784A CN 201710550808 A CN201710550808 A CN 201710550808A CN 107564784 A CN107564784 A CN 107564784A
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Abstract
The invention provides a kind of device of the enhanced light auxiliary field emitting electronic source based on heterojunction structure, including：Cathode electrode, the field emmision material layer prepared on the cathode electrode, and it is covered in the ultra-thin medium film of field emmision material layer surface；Photoinduced electron transmitting and Field Electron Emission are combined by the light auxiliary field emitting electronic source, emissive material internal electron absorbs incident light energy, electron energy level is improved, reduces the driving electric field of Flied emission, improves the working frequency and modulation sensitivity of driving electric field；The preparation method of the light auxiliary field emitting electronic source is that emissive material layer surface on the scene covers one layer of ultra-thin ultra-thin medium film, under the exciting of incident light, emissive material internal electron obtains energy and forms thermoelectron, cross the conduction band that Schottky barrier is injected into ultra-thin medium film, reduce surface vacuum potential barrier, and then Flied emission electric current is improved, the field emission performance of electronics gets a promotion.
Description
Technical field
It is more particularly to a kind of based on compound the present invention relates to field emitting electronic source based on nano material and preparation method thereof
Light auxiliary field emitting electronic source of nano material and preparation method thereof, suitable for various vacuum electron device cathode electronics sources.
Background technology
Based on the field emitting electronic source of nano material in FPD, microwave communication, electron microscope and x-ray imaging etc.
There is important application in field.However, with the development of vacuum micro-nano electronics, field emission principle can not meet that some are great
The demand of emerging field, for example, high-frequency, high power pulse microwave device, Time-resolved Electron Microscope, free-electron laser
Deng.This is mainly due to two bottleneck problems：1. Flied emission usually requires very strong driving electric field (being more than 1000V/ μm), thus
Some brought are difficult to overcome problem, such as：Vacuum level requirements are high, the negative electrode reliability as caused by vacuum breakdown or Ions Bombardment
And service life reduction, strong driving electric field and current-modulation sensitivity mutually restrict, electron beam is difficult to focus on etc..2. it is limited by electronics
The limitation of circuit intrinsic frequency characteristic, field emitting electronic source are difficult to ultrashort pulse (subpicosecond magnitude) transmitting.
In order to reduce the driving electric field of Flied emission, its working frequency and modulation sensitivity are improved, people are sight in recent years
Invest the light auxiliary field emitting electronic source based on nano material.Light aids in field emission electron source to cause photoinduced electron transmitting and field
Electron emission is combined, and can realize the breakthrough to prior art bottleneck while both advantages are retained.This electron emission
Principle be mainly that emissive material internal electron lifts electron energy level by absorbing incident light energy, and this can effectively drop
Extra electric field needed for low field transmitting.And enhancing of the incident light to Flied emission mainly passes through photonic absorption, photo-thermal effect, Yi Jiguang
The modes such as field action are realized.
Because nano material has a prominent photoelectric properties, for example, photoproduction hot carrier, photo-thermal effect, and surface etc. from
Excimer light field enhancement effect etc..Therefore, nano material should have good light auxiliary field emission performance, in novel evacuated electronics device
There is potential application foreground in part.Foreign study mechanism has appreciated that the importance in the field, and it is innovative to have started some
Research work.
Therefore, it is necessary to which a kind of driving electric field that can be effectively reduced Flied emission, improves its working frequency and modulation sensitivity
The auxiliary field emitting electronic source and preparation method thereof of the enhanced light based on hetero-junctions.
The content of the invention
It is an object of the invention to improve light auxiliary field emission performance, there is provided a kind of enhanced light auxiliary based on hetero-junctions
Field emitting electronic source and preparation method thereof.It is each that this kind of electron source can be used for high speed X-ray source, microwave tube, electron microscope etc.
Kind vacuum electron device.
According to an aspect of the present invention, there is provided a kind of enhanced light auxiliary field emitting electronic source based on heterojunction structure
Device, including：
Cathode electrode, for as substrate, supporting field emmision material layer；
The field emmision material layer prepared on the cathode electrode, for absorbing light energy, form thermoelectron；
With the ultra-thin medium film for being covered in field emmision material layer surface, under the regulation and control of incident light reduce material table
Face is effectively class, to strengthen field emission performance.
Wherein, the cathode electrode, using high temperature resistant conductive material, typically from metal material.
Preferably, the cathode electrode is molybdenum electrode.
Wherein, the field emmision material layer uses carbon nanomaterial, semi-conducting material or metal material.
Preferably, the field emmision material layer uses carbon nano pipe array.The carbon nano-pipe array is classified as cylindrical array,
Its height is 100 microns, and body diameter is 10 microns.The distance between adjacent carbon nanotubes are 10 microns.
Wherein, the ultra-thin medium film, using semiconductor material with wide forbidden band or insulating dielectric materials.
Preferably, the ultra-thin medium film is boron nitride pellicle.
Present invention also offers a kind of preparation side of the enhanced light auxiliary field emission electronic source device based on heterojunction structure
Method, comprise the following steps：
Step 1：Using hot gas as chemical deposition prepares field emmision material layer on the cathode electrode；
Step 2：One layer of ultra-thin ultra-thin medium film is covered using recrystallization method emissive material layer surface on the scene；
Wherein, the field emmision material selects carbon nano pipe array, and the carbon nano-pipe array is classified as cylindrical array, and it is high
Spend for 100 microns, body diameter is 10 microns.The distance between adjacent carbon nanotubes are 10 microns.
Wherein, the thickness of the ultra-thin ultra-thin medium film is below 10nm.
Wherein, the cathode electrode is metal electrode.
It is described based on heterojunction structure enhanced light auxiliary field emission electronic source device working method be：Incident light is converged
Gather and prepare on field emmision material layer on the cathode electrode, field emmision material layer internal electron after incident light energy is absorbed,
Form thermoelectron；The thermoelectron crosses the Schottky barrier between field emmision material layer and ultra-thin medium film, enters super
The conduction band of thin-medium thin-film material, and then reduce effective vacuum barrier of material surface.
The present invention provides a kind of enhanced light auxiliary field emitting electronic source based on hetero-junctions and preparation method thereof, the light
Photoinduced electron transmitting and Field Electron Emission are combined by auxiliary field emitting electronic source, and emissive material internal electron absorbs incident light
Energy, electron energy level is improved, so as to effectively reduce the driving electric field of Flied emission, and then improve the work frequency of driving electric field
Rate and modulation sensitivity；The preparation method of the light auxiliary field emitting electronic source is that one layer of emissive material layer surface covering on the scene is super
Thin ultra-thin medium film, under the exciting of incident light, emissive material internal electron obtains energy and forms thermoelectron, crosses Schottky
Potential barrier is injected into the conduction band of ultra-thin medium film, reduces surface vacuum potential barrier, and then improve Flied emission electric current, the Flied emission of electronics
Performance gets a promotion.
It should be appreciated that foregoing description substantially and follow-up description in detail are exemplary illustration and explanation, should not
As the limitation to the claimed content of the present invention.
Brief description of the drawings
With reference to the accompanying drawing enclosed, the present invention more purpose, function and advantages will pass through the as follows of embodiment of the present invention
Description is illustrated, wherein：
Fig. 1 shows the cathode material structure and working method schematic diagram of the preferred embodiment of the invention；
Fig. 2 shows that recrystallization method prepares the schematic diagram of boron nitride enveloped carbon nanometer tube；
Under the conditions of Fig. 3 shows identical incident optical power, the light auxiliary Flied emission before and after boron nitride enveloped carbon nanometer tube
Figure can be compared.
Embodiment
By reference to one exemplary embodiment, the purpose of the present invention and function and the side for realizing these purposes and function
Method will be illustrated.However, the present invention is not limited to one exemplary embodiment as disclosed below；Can by multi-form come
It is realized.The essence of specification is only to aid in the detail of the various equivalent modifications Integrated Understanding present invention.
Explanation is additionally needed, term " light auxiliary Flied emission " used in the present invention takes its conventional sense in the art, refers to profit
With the work of the field emission performance of light priming effect lifting electronics, wherein this light auxiliary field emitting electronic source of Fig. 1 emphasizeds
Mode, vacuum cavity are only schematic diagram, can be the various instrument and equipments for needing to use electron source.
Hereinafter, embodiments of the invention will be described with reference to the drawings.In the accompanying drawings, identical reference represents identical
Or similar part, or same or like step.
Fig. 1 is the cathode material structure and working method schematic diagram of the preferred embodiment of the invention.
Referring to Fig. 1, the present invention provides a kind of device of the enhanced light auxiliary field emitting electronic source based on heterojunction structure, bag
Include：
Cathode electrode 101, for as substrate, supporting field emmision material layer；
The field emmision material layer 102 prepared on cathode electrode 101, for absorbing incident light, form thermoelectron；
With the ultra-thin medium film 103 for being covered in the surface of field emmision material layer 102, for being reduced under the regulation and control of incident light
Material surface is effectively class, to strengthen field emission performance.
The cathode electrode 101, using high temperature resistant conductive material, typically from metal material；It is preferred in the present invention one
In embodiment, the cathode electrode 101 is molybdenum electrode.
In a preferred embodiment of the invention, the field emmision material layer 102 is using carbon nanomaterial, semi-conducting material
Or metal material.
The ultra-thin medium film 103, using semiconductor material with wide forbidden band or insulating dielectric materials, the one of the present invention
In individual preferred embodiment, the ultra-thin medium film 103 is boron nitride pellicle.
Present invention also offers a kind of preparation side of the enhanced light auxiliary field emission electronic source device based on heterojunction structure
Method, comprise the following steps：
Step 1：Using hot gas as chemical deposition prepares field emmision material layer 102 on cathode electrode 101；
Step 2：One layer of ultra-thin ultra-thin medium film 103 is covered using the recrystallization method surface of emitting material layer 102 on the scene；
Wherein, the field emmision material 102 selects carbon nano pipe array, and the carbon nano-pipe array is classified as cylindrical array,
Its height is 100 microns, and body diameter is 10 microns.The distance between adjacent carbon nanotubes are 10 microns.
Wherein, the thickness of the ultra-thin ultra-thin medium film is below 10nm.
It is described based on heterojunction structure enhanced light auxiliary field emission electronic source device working method be：By incident light
104 converge on the field emmision material layer 102 prepared on cathode electrode 101, and the internal electron of field emmision material layer 102 is absorbing
After incident light energy, thermoelectron 105 is formed；The thermoelectron 105 crosses field emmision material layer 102 and ultra-thin medium film 103
Between Schottky barrier, enter the conduction band of the material of ultra-thin medium film 103, and then reduce effective vacuum gesture of material surface
Build.
Further specifically retouched by taking a kind of boron nitride-carbon nano tube compound material light auxiliary field emitting electronic source as an example below
State its preparation method.
A kind of preparation method of boron nitride-carbon nano tube compound material light auxiliary field emitting electronic source is as follows：
Step 1：The preparation of CNT.
Field emmision material layer 102 is prepared, the field emmision material uses carbon nano-tube material；The system of the carbon nanotube layer
It is standby to use hot gas to be concretely comprised the following steps as chemical deposition：
The molybdenum base bottom for preparing catalyst is placed in quartz boat；Then by reative cell be evacuated to 10-3mbar or
Lower pressure removes impurity and vapor；Then ammonia is introduced into reative cell, air flow rate is maintained at 200SCCM, in reative cell
Air pressure be maintained at 3.5mbar；At the same time, reative cell starts to warm up, and heating rate is 4 DEG C/s, when temperature rises to 560 DEG C
When, acetylene gas is passed through immediately, flow 200SCCM, keeps air pressure in 10mbar.Carbon is controlled by controlling the time of growth
The height of nanotube.
Under this growth conditions, 5 microns of high carbon nanotube layers take around the growth time of 1 minute.Wherein, it is described
Carbon nano-pipe array is classified as cylindrical array, and its height is 100 microns, and body diameter is 10 microns, between adjacent carbon nanotubes layer
Distance be 10 microns.
Step 2：One layer of boron nitride pellicle is coated in carbon nano tube surface.
The surface of emitting material layer 102 on the scene covers one layer of ultra-thin ultra-thin medium film 103；The ultra-thin ultra-thin medium film
103 use boron nitride pellicle, and Fig. 2 show the schematic diagram that recrystallization method prepares boron nitride enveloped carbon nanometer tube, wherein the nitrogen
Change boron membrane preparation method be：
(1) 15g diboron trioxides are dissolved in the saturation that diboron trioxide is made in 150ml ethanol solutions at 60 DEG C
Ethanol solution.
(2) at room temperature, the carbon nano pipe array sample prepared is suspended in superjacent, volatilized naturally by solution
Method CNT outer surface coat one layer of diboron trioxide (B2O3) crystal film；Wherein, can by the change for time of volatilizing
To control the integrality and thickness of crystal film cladding, the selection of crystal thickness is to improve the field of CNT hair to greatest extent
Condition premised on performance is penetrated, the CNT that boron nitride coats completely can be obtained.
(3) carbon nanotube-sample for coating diboron trioxide is put into CVD reacting furnaces, in atmospheric pressure, 300SCCM
Ar and 30SCCM H2Protection under, 900 DEG C are warming up to 17 DEG C/min speed, then in 300SCCM Ar and 30SCCM NH3
In the presence of, 15mins is reacted, room temperature is then down to 15 DEG C/min speed, so as to obtain the carbon nanometer of boron nitride cladding
Pipe.
Wherein, reaction temperature, NH are passed through3Flow and reaction time can control the thickness of boron nitride pellicle.The nitridation
The thickness of boron membrane is 10nm.Wherein the thickness of ultra-thin medium film 103 is below 10nm, and the thickness range is equally applicable
In the film of other materials.
Further, referring to Fig. 1, the work of the boron nitride-carbon nano tube compound material light auxiliary field emitting electronic source
Mode is：Incident light 104 is focused on preparation in negative electrode electricity by incident light 104 by the entrance window 106a by vacuum cavity 106
On carbon nano pipe array on pole 101, under the exciting of incident light 104, carbon nanotube layer internal electron absorbs incident light energy,
Thermoelectron 105 is produced, crosses the conduction band that Schottky barrier is injected into boron nitride pellicle, reduces the effective vacuum barrier in surface, and then
Improve Flied emission electric current；Wherein, the anode electrode 107 is used for collecting electronics；The cathode electrode 101 is molybdenum electrode.
Referring to Fig. 3, Fig. 3 is the light auxiliary field hair before and after boron nitride enveloped carbon nanometer tube under the conditions of identical incident optical power
Performance comparison figure is penetrated, can further be verified by figure：Under the conditions of identical incident optical power, the radiation after boron nitride enveloped carbon nanometer tube
Electric current significantly increases, and the field emission performance of electronics gets a promotion.
The present invention provides a kind of enhanced light auxiliary field emitting electronic source based on hetero-junctions and preparation method thereof, the light
Photoinduced electron transmitting and Field Electron Emission are combined by auxiliary field emitting electronic source, and emissive material internal electron absorbs incident light
Energy, improve electron energy level, so as to effectively reduce the driving electric field of Flied emission, improve driving electric field working frequency and
Modulation sensitivity；The preparation method of the light auxiliary field emitting electronic source is that one layer of emissive material layer surface covering on the scene is ultra-thin super
Thin-medium film, under the exciting of incident light, emissive material internal electron obtains energy and forms thermoelectron, crosses Schottky barrier
The conduction band of ultra-thin medium film is injected into, reduces surface vacuum potential barrier, and then improve Flied emission electric current, the field emission performance of electronics
Get a promotion.
With reference to the explanation of the invention disclosed here and practice, other embodiment of the invention is for those skilled in the art
It all will be readily apparent and understand.Illustrate and embodiment is to be considered only as exemplary, of the invention true scope and purport is equal
It is defined in the claims.
Claims (10)
1. a kind of device of the enhanced light auxiliary field emitting electronic source based on heterojunction structure, including：
Cathode electrode, for as substrate, supporting field emmision material layer；
The field emmision material layer prepared on the cathode electrode, for absorbing incident light energy, form thermoelectron；
With the ultra-thin medium film for being covered in field emmision material layer surface, have for reducing material surface under the regulation and control of incident light
Effect is class, to strengthen field emission performance.
2. enhanced light auxiliary field emitting electronic source according to claim 1, it is characterised in that the cathode electrode, adopt
With high temperature resistant conductive material.
3. enhanced light auxiliary field emitting electronic source according to claim 1, it is characterised in that the field emmision material layer
Using carbon nanomaterial, semi-conducting material or metal material.
4. enhanced light auxiliary field emitting electronic source according to claim 1, it is characterised in that the ultra-thin medium is thin
Film, using semiconductor material with wide forbidden band or insulating dielectric materials.
5. enhanced light auxiliary field emitting electronic source according to claim 1 or 2, it is characterised in that the cathode electrode
For molybdenum electrode.
6. the enhanced light auxiliary field emitting electronic source according to claim 1 or 3, it is characterised in that the Flied emission material
The bed of material uses carbon nano pipe array, and the carbon nano-pipe array is classified as cylindrical array, and its height is 100 microns, and body diameter is
10 microns；The distance between adjacent carbon nanotubes are 10 microns.
7. the enhanced light auxiliary field emitting electronic source according to claim 1 or 4, it is characterised in that the ultra-thin medium
Film is boron nitride pellicle.
A kind of 8. preparation of enhanced light auxiliary field emission electronic source device based on heterojunction structure according to claim 1
Method, comprise the following steps：
Step 1：Using hot gas as chemical deposition prepares field emmision material layer on the cathode electrode；
Step 2：One layer of ultra-thin ultra-thin medium film is covered using recrystallization method emissive material layer surface on the scene.
A kind of 9. preparation of enhanced light auxiliary field emission electronic source device based on heterojunction structure according to claim 8
Method, it is characterised in that the field emmision material selects carbon nano pipe array, and the carbon nano-pipe array is classified as cylindrical array,
Its height is 100 microns, and body diameter is 10 microns.The distance between adjacent carbon nanotubes are 10 microns；It is described ultra-thin
Thickness≤10nm of dielectric film.
A kind of 10. system of enhanced light auxiliary field emission electronic source device based on heterojunction structure according to claim 8
Preparation Method, it is characterised in that it is described based on heterojunction structure enhanced light auxiliary field emission electronic source device working method be：
By on incident light rays to the field emmision material layer prepared on the cathode electrode, field emmision material layer internal electron is absorbing incidence
After light energy, thermoelectron is formed；The thermoelectron crosses the Schottky barrier between field emmision material layer and ultra-thin medium film,
The conduction band of ultra-thin medium thin-film material is entered, and then reduces effective vacuum barrier of material surface.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111199852A (en) * | 2018-11-16 | 2020-05-26 | 核工业西南物理研究院 | Light-induced field emission cathode electron emission device |
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| CN101051596A (en) * | 2006-04-07 | 2007-10-10 | 清华大学 | Carbon nano tube field transmitting electronic source and its producing method |
| CN105428183A (en) * | 2015-11-17 | 2016-03-23 | 南京理工大学 | Reflective NEA GaN nanowire array photoelectric negative electrode and manufacturing method therefor |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101051596A (en) * | 2006-04-07 | 2007-10-10 | 清华大学 | Carbon nano tube field transmitting electronic source and its producing method |
| CN105428183A (en) * | 2015-11-17 | 2016-03-23 | 南京理工大学 | Reflective NEA GaN nanowire array photoelectric negative electrode and manufacturing method therefor |
Non-Patent Citations (1)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111199852A (en) * | 2018-11-16 | 2020-05-26 | 核工业西南物理研究院 | Light-induced field emission cathode electron emission device |
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