CN107546305A - A kind of GaN base light emitting epitaxial structure - Google Patents
A kind of GaN base light emitting epitaxial structure Download PDFInfo
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- CN107546305A CN107546305A CN201610488191.XA CN201610488191A CN107546305A CN 107546305 A CN107546305 A CN 107546305A CN 201610488191 A CN201610488191 A CN 201610488191A CN 107546305 A CN107546305 A CN 107546305A
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Abstract
The present invention provides a kind of GaN base light emitting epitaxial structure, and the epitaxial structure is followed successively by from top to bottom：Substrate layer, lattice mismatch cushion, template layer and GaN base sandwich construction, wherein, GaN base sandwich construction includes n-type GaN layer, p-type GaN layer and the luminescent layer between n-layer and p-type GaN layer, also include two barrier layers for being located at luminescent layer both sides respectively, the conduction band energy of barrier layer is lower than luminescent layer than luminous floor height, Valence-band；Also include hole blocking layer in GaN base sandwich construction, hole blocking layer is set close to n-type GaN layer side, and the conduction band energy of hole blocking layer is higher than the quantum well structure in luminescent layer, it is low with the quantum well structure in energy ratio luminescent layer to be situated between.The SQW of the structure makes the local area limit effect in electronics and hole more preferable, and particularly under high current density, the spilling in electronics and hole is suppressed, so that electronics and hole-recombination probability become big, improves luminous efficiency.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of GaN base light emitting epitaxial structure.
Background technology
Light emitting diode (LED, Light Emitting Diode) is a kind of semiconducting solid luminescent device, and it utilizes half
Conductor PN junction can directly convert the electricity into light as luminescent material.After the both ends of semiconductor PN add forward voltage, note
Enter minority carrier in PN junction and majority carrier occurs compound, release the energy of surplus and cause photon to be launched, directly hair
Go out the light that color is red, orange, yellow, green, blue, blue, purple.Wherein, partly led with the III-V that GaN (gallium nitride) is representative
Body has proved to be due to having the characteristics that band gap is wide, luminous efficiency is high, electronics saturation drift velocity is high, chemical property is stable
A kind of material of up-and-coming manufacture high efficiency photoelectric device, successfully realizes efficient blue, green, near ultraviolet and lights.
Compared to conventional light source, GaN base is blue, green LED device has high brightness, long-life, low energy consumption, fast response time
The advantages that, it is widely used in the fields such as full-color display, signal designation, Landscape Lighting.
At present, GaN base LED mainly uses P-N junction structure, and between P-type semiconductor and N-type semiconductor
Provided with multi-quantum pit structure, SQW be by between two kinds of different semiconductor layers insert thin semiconductor layer and formed one
Kind structure, the thin semiconductor layer have the energy bandgaps more much smaller than that two kinds of semiconductor layers.Now commonly used GaN base hair
Optical diode structure is：The AlGaN layer of n-type doping is grown in the GaN layer of n-type doping, then grows InGaN/GaN Multiple-quantums
Trap, the GaN layer that then AlGaN layer of regrowth p-type doping and p-type are adulterated, when growing InGaN/GaN MQWs, GaN gesture
Si is mixed in barrier layer, can so improve GaN crystal mass, while promotes the In in SQW to be condensed into In groups, makes diode
Luminescence enhancement.InGaN/GaN bases trap builds structure LED when the current density of injection is larger, and LED quantum efficiency is with Injection Current
Density increases and declined, i.e. Droop effects (light efficiency decline phenomenon).Research of the scientific research personnel to this effect is sought more than 10 years
The reason for asking the increase LED efficiency decline with electric current, research finds that the reason for one of them is more crucial is carrier
Leak (V.Rozhansky and D.A.Zakheim, Phys.Status Solidi A 204,227 (2007)；Xie,
N.Xianfeng,Q.Fan,R.Shimada,and H. Appl.Phys.Lett.93,
121107(2008))。
At present, luminescent layer design has that first, potential barrier is mixed Si and measured used by GaN base light emitting
N-type impurity is introduced in sub- trap so that P-N junction deviates InGaN/GaN multiquantum well regions, so that in LED operation in just
During to bias, the minority carrier of quantum well region is hole, hole in diffusion process with electronics recombination luminescence, but due to hole
Mobility it is very low, diffusion length very little, the electronics of radiation recombination occurs and hole number is also corresponding reduces.On the contrary, p-type is adulterated
GaN layer in minority carrier be electronics, its diffusion length is very long, this just make recombination region be predominantly located in p-type doping
GaN layer, and the radiation recombination in MQW occurs and weakens；Further, in this configuration, electronics and hole-recombination mode are main
Based on direct radioluminescence, with the increase that carrier injects, the centre of luminescence tends to saturation, and unnecessary carrier can be by non-
Radiative recombination process is compound, strongly limit using InGaN/GaN MQWs as the lumination of light emitting diode intensity of active area
Further improve.
, typically can be in InGaN/GaN volumes in order to suppress the efficiency decrease problem under Droop effects, that is, high current
Electronic barrier layer is added in sub- trap, is as shown in Figure 1 the band structure schematic diagram of MQW in the prior art.So, big
In the case of current density, the electronic barrier layer will stop that electronics is revealed from SQW, electronics and hole in SQW is existed
It is compound in SQW, improve electronics and hole radiative recombination probability.But even if electricity is added in InGaN/GaN MQWs
Sub- barrier layer, Droop effects still occur.
The content of the invention
The technical problems to be solved by the invention are to propose a kind of GaN base light emitting epitaxial structure, are efficiently solved
The Droop effects that light efficiency declines under high current caused by carrier spilling SQW, so as to improve hairs of the LED under high current
Light efficiency.
Technical scheme provided by the invention is as follows：
A kind of GaN base light emitting epitaxial structure, the GaN base light emitting epitaxial structure are followed successively by from top to bottom：
Substrate layer, lattice mismatch cushion, template layer and GaN base sandwich construction, wherein, the GaN base sandwich construction includes n-type
GaN layer, p-type GaN layer and the luminescent layer between n-layer and p-type GaN layer, in addition to two respectively positioned at described luminous
The barrier layer of layer both sides, the conduction band energy of the barrier layer are lower than the luminescent layer than the luminous floor height, Valence-band；
Also include hole blocking layer in the GaN base sandwich construction, the hole blocking layer is close to the n-type GaN layer one
Side is set, and the conduction band energy of the hole blocking layer is higher than the quantum well structure in the luminescent layer, is situated between described in band energy ratio
Quantum well structure in luminescent layer is low.
It is further preferred that the luminescent layer is made up of AlxInyGa1-x-yN, predetermined composition therein is In, and 0≤x
≤ 1,0≤y≤1.
It is further preferred that the barrier layer is made up of AltInfGa1-t-fN, wherein, 0≤t≤1,0≤f≤1.
It is further preferred that the hole blocking layer is by AlmInnGa1-m-nN is formed, wherein, 0≤m≤1,0≤n≤1.
It is further preferred that being, the hole blocking layer is individual layer AlmInnGa1-m-nN structures are multilayer
AlmInnGa1-m-nN/AlcIndGa1-c-dN superlattice structures, wherein, 0≤m≤1,0≤n≤1,0≤c≤1,0≤d≤1.
It is further preferred that Si elements or the Si elements that undope are adulterated in the hole blocking layer.
It is further preferred that the lattice mismatch cushion is one in AlN, GaN, AlGaN, AlInN and AlInGaN
Kind.
It is further preferred that the lattice mismatch cushion is sandwich construction or single layer structure.
It is further preferred that the energy bandgaps of the luminescent layer in 1.59eV between 5.6eV.
Beneficial effects of the present invention：
In GaN base light emitting epitaxial structure provided by the invention, including be made up of GaN base semiconducting compound
Luminescent layer, and have hole blocking layer close to n-layer side in the luminescent layer, and the hole blocking layer has than whole luminescent layer more
High conduction band energy and lower Valence-band.So as to prevent the hole in luminescent layer from overflowing, coordinate original in epitaxial structure
Electronic barrier layer so that the local area limit effect of trap is more preferable in luminescent layer quantum well structure, so as to improve luminescent layer SQW
The recombination rate in electronics and hole in structure, substantially increases the temperature stability and luminous efficiency of chip, while suppresses high current
The lower light efficiency occurred of injection declines (efficiency droop) effect.
Brief description of the drawings
The band structure schematic diagram of Fig. 1 MQWs in the prior art；
The band structure schematic diagram of MQW in Fig. 2 present invention；
Fig. 3 is GaN base light emitting epitaxial structure schematic diagram in the present invention；
Fig. 4 is compound multi quantum well structure schematic diagram in the present invention.
Reference：
A- conduction bands bottom energy, B- are situated between with top energy；
1- Sapphire Substrate layers, 2-GaN low temperature buffer layers, 3- undoped with high-temperature gan layer, 4-n type GaN layers, 5- is compound
Multiple quantum well layer, 6- hole blocking layer 7-p type GaN layers, 51- superlattices stress modulation layers, 52- hole blocking layers, 53- potential barriers
Layer, 54- chemiluminescence quantum well layers, 55- electronic barrier layers.
Embodiment
It is GaN base light emitting epitaxial structure schematic diagram provided by the invention with reference to Fig. 3, it can be seen that
The epitaxial structure includes：Sapphire Substrate layer 1, the GaN low temperature buffers grown from top to bottom on Sapphire Substrate layer 1 successively
Layer 2, undoped with high-temperature gan layer 3, n-type GaN layer 4, compound multiple quantum well layer 5 and p-type GaN layer 7.Wherein compound Multiple-quantum
Well layer 5 includes superlattices stress modulation layer 51, hole blocking layer 52, barrier layer 53, chemiluminescence SQW successively from bottom to top
Layer 54 and electronic barrier layer 55.Luminescent quantum well layer 54 and electronic barrier layer 55 include the potential barrier of multiple cycling depositions in order
Layer and potential well layer.Hole blocking layer 52 equally includes the barrier layer and potential well layer of one or more groups of cycling depositions in order, such as Fig. 2
It show the band structure schematic diagram of SQW in compound multiple quantum well layer in the present invention.
Having for the present invention is further illustrated below in conjunction with the embodiment of the preparation process of GaN base light emitting epitaxial structure
Beneficial effect.
Raw material:Using high-purity N2Or high-purity H2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N
Source, metal organic source trimethyl gallium (TMGa), triethyl-gallium (TEGa) are used as gallium source, and trimethyl indium (TMIn) is used as indium source, n-type
Aluminium dopants with p-type aluminium indium gallium nitrogen layer are trimethyl aluminium (TMAl), and n-type dopant is silane (SiH4), p-type dopant two
Luxuriant magnesium (Cp2Mg), substrate is (0001) surface sapphire.
Embodiment 1
Preparation method is as follows:
(1) on the Sapphire Substrate placing graphite disk of (0001) crystal orientation and will be sent into reaction chamber, be heated to 1100 DEG C it is right
Sapphire Substrate carries out 10min heat treatment, is passed through NH3Nitrogen treatment about 3min is carried out to Sapphire Substrate.
(2) 525 DEG C of thick GaN low temperature buffer layers of growth about 20nm are cooled to, then raise temperature to 1050 DEG C, 2 μm of growth
The GaN layer that undopes (uGaN)；Keeping temperature, mix Si GaN layer (nGaN) in the n-type of 4 μm of continued propagation in GaN layer that undopes.
(3) 850-900 DEG C is cooled to, it is 100-200sccm (Standard-state Cubic to be passed through flow
Centimeter per Minute, volume flow unit) TMGa, flow 50-100L/min NH3, flow is considerably less
SiH4The InGaN/GaN superlattices stress modulation layers in 20-50 cycle are grown on nGaN layers.
(4) at same temperature, it is passed through the TMGa that flow is 50-150sccm, flow is 50-150sccm TMAl, flow
60L/min NH3, the considerably less SiH of flow4.The thick n-types of 20-200nm are grown on InGaN/GaN superlattices stress modulation layers
Individual layer AlGaN hole blocking layer.
(5) at same temperature, it is passed through the TMGa that flow is 50-150sccm, flow is 50-150sccm TMIn, flow
60L/min NH3, the considerably less SiH of flow4, the thick n-type InGaN barrier layers of 20nm are grown on superlattices stress modulation layer
And InGaN chemiluminescences quantum well layer (InGaN) (GaN).The chemiluminescence quantum well layer by 4-12 cycle potential well layer and
Barrier layer forms.
(6) growth thickness is 10-50nm p-type InGaN electronic barrier layers on chemiluminescence quantum well layer, specific growth
Condition is：Growth pressure is 100-200Torr, and temperature is down to 800-850 DEG C, is passed through flow 10-50L/min NH3, flow
120L/min H2, flow 60L/min N2, flow is 450-550Sccm TEGa, and flow is 50-250sccm TMIn, is flowed
Measure the TMAl for 50-250sccm.
(7) p-type GaN layer growth conditions is:Holding growth pressure is 100-200Torr, and temperature rises to 850-950 DEG C, life
Smooth pGaN layers thick long 250nm.
(8) finally epitaxial wafer is annealed 5-20min under 500-700 DEG C of nitrogen atmosphere.
Embodiment 2
Preparation method is as follows:
(1) on the Sapphire Substrate placing graphite disk of (0001) crystal orientation and will be sent into reaction chamber, be heated to 1100 DEG C it is right
Sapphire Substrate carries out 10min heat treatment, is passed through NH3Nitrogen treatment about 3min is carried out to Sapphire Substrate.
(2) 525 DEG C of thick GaN low temperature buffer layers of growth about 20nm are cooled to, then raise temperature to 1050 DEG C, 2 μm of growth
The GaN layer that undopes (uGaN)；Keeping temperature, mix Si GaN layer (nGaN) in the n-type of 4 μm of continued propagation in GaN layer that undopes.
(3) 850-900 DEG C is cooled to, is passed through TMGa, flow 50-100L/min NH that flow is 100-200sccm3,
The considerably less SiH of flow4The InGaN/GaN superlattices stress modulation layers in 20-50 cycle are grown on nGaN layers.
(4) at same temperature, it is passed through the TMGa that flow is 50-150sccm, flow is 50-150sccm TMAl, flow
60L/min NH3, the considerably less SiH of flow4.The thick n-types of 20-200nm are grown on InGaN/GaN superlattices stress modulation layers
By the hole blocking layer of the 3-20 AlGaN/GaN sandwich constructions for circulating to obtain.
(5) at same temperature, it is passed through the TMGa that flow is 50-150sccm, flow is 50-150sccm TMIn, flow
60L/min NH3, the considerably less SiH of flow4, the thick n-type InGaN barrier layers of 20nm are grown on superlattices stress modulation layer
And InGaN chemiluminescences quantum well layer (InGaN) (GaN).Chemiluminescence quantum well layer by 4-12 cycle potential well layer and gesture
Barrier layer forms.
(6) growth thickness is 10-50nm p-type aluminium indium gallium nitrogen electronic barrier layer on chemiluminescence quantum well layer, specifically
Growth conditions is：Growth pressure is 100-200Torr, and temperature is down to 800-850 DEG C, is passed through flow 10-50L/min NH3, stream
Measure 120L/min H2, flow 60L/min N2, flow is 450-550Sccm TEGa, and flow is 50-250sccm TMIn,
Flow is 50-250sccm TMAl.
(7) p-type GaN layer growth conditions is:Holding growth pressure is 100-200Torr, and temperature rises to 850-950 DEG C, life
Smooth pGaN layers thick long 250nm.
(8) finally epitaxial wafer is annealed 5-20min under 500-700 DEG C of nitrogen atmosphere.
Embodiment 3
(1) on the Sapphire Substrate placing graphite disk of (0001) crystal orientation and will be sent into reaction chamber, be heated to 1100 DEG C it is right
Sapphire Substrate carries out 10min heat treatment, is passed through NH3Nitrogen treatment about 3min is carried out to Sapphire Substrate.
(2) 525 DEG C of thick GaN low temperature buffer layers of growth about 20nm are cooled to, then raise temperature to 1050 DEG C, 2 μm of growth
The GaN layer that undopes (uGaN)；Keeping temperature, mix Si GaN layer (nGaN) in the n-type of 4 μm of continued propagation in GaN layer that undopes.
(3) 850-900 DEG C is cooled to, is passed through TMGa, flow 50-100L/min NH that flow is 100-200sccm3,
The considerably less SiH of flow4The InGaN/GaN superlattices stress modulation layers in 20-50 cycle are grown on nGaN layers.
(4) at same temperature, it is passed through the TMGa that flow is 50-150sccm, flow is 50-150sccm TMAl, flow
60L/min NH3.The thick n-type individual layer AlGaN holes resistances of 20-200nm are grown on InGaN/GaN superlattices stress modulation layers
Barrier.
(5) at same temperature, it is passed through the TMGa that flow is 50-150sccm, flow is 50-150sccm TMIn, flow
60L/min NH3, the considerably less SiH of flow4, the thick n-type InGaN barrier layers of 20nm are grown on superlattices stress modulation layer
And InGaN chemiluminescences quantum well layer (InGaN) (GaN).Chemiluminescence quantum well layer by 4-12 cycle potential well layer and gesture
Barrier layer forms.
(6) growth thickness is 10-50nm p-type aluminium indium gallium nitrogen electronic barrier layer on chemiluminescence quantum well layer, specifically
Growth conditions is：Growth pressure is 100-200Torr, and temperature is down to 800-850 DEG C, is passed through flow 10-50L/min NH3, stream
Measure 120L/min H2, flow 60L/min N2, flow is 450-550Sccm TEGa, and flow is 50-250sccm TMIn,
Flow is 50-250sccm TMAl.
(7) p-type GaN layer growth conditions is:Holding growth pressure is 100-200Torr, and temperature rises to 850-950 DEG C, life
Smooth pGaN layers thick long 250nm.
(8) finally epitaxial wafer is annealed 5-20min under 500-700 DEG C of nitrogen atmosphere.
Above-described embodiment only listing property illustrates the technological thought and feature of the present invention, is not intended to limit the invention, for
For those skilled in the art, the present invention can have various changes and change.Therefore it is all according to disclosed spiritual institute
The equal change or modification made, should cover in protection scope of the present invention.
Claims (9)
1. a kind of GaN base light emitting epitaxial structure, it is characterised in that the GaN base light emitting epitaxial structure is under
To being above followed successively by：Substrate layer, lattice mismatch cushion, template layer and GaN base sandwich construction, wherein,
The GaN base sandwich construction includes n-type GaN layer, p-type GaN layer and lighting between n-layer and p-type GaN layer
Layer, in addition to two barrier layers for being located at the luminescent layer both sides respectively, the conduction band energy of the barrier layer is than the luminescent layer
Height, Valence-band are lower than the luminescent layer；
Also include hole blocking layer in the GaN base sandwich construction, the hole blocking layer is set close to the n-type GaN layer side
Put, and the conduction band energy of the hole blocking layer is higher than the quantum well structure in the luminescent layer, Valence-band is more luminous than described
Quantum well structure in layer is low.
2. GaN base light emitting epitaxial structure as claimed in claim 1, it is characterised in that the luminescent layer by
AlxInyGa1-x-yN is formed, and 0≤x≤1,0≤y≤1.
3. GaN base light emitting epitaxial structure as claimed in claim 1, it is characterised in that the barrier layer by
AltInfGa1-t-fN is formed, wherein, 0≤t≤1,0≤f≤1.
4. GaN base light emitting epitaxial structure as claimed in claim 1, it is characterised in that the hole blocking layer by
AlmInnGa1-m-nN is formed, wherein, 0≤m≤1,0≤n≤1.
5. the GaN base light emitting epitaxial structure as described in claim 1 or 4, it is characterised in that the hole blocking layer is
Individual layer AlmInnGa1-m-nN structures are multilayer AlmInnGa1-m-nN/AlcIndGa1-c-dN superlattice structures, wherein, 0≤m≤1,0
≤ n≤1,0≤c≤1,0≤d≤1.
6. GaN base light emitting epitaxial structure as claimed in claim 5, it is characterised in that in the hole blocking layer
Adulterate Si elements or the Si elements that undope.
7. GaN base light emitting epitaxial structure as claimed in claim 1, it is characterised in that the lattice mismatch cushion
For one kind in AlN, GaN, AlGaN, AlInN and AlInGaN.
8. GaN base light emitting epitaxial structure as claimed in claim 7, it is characterised in that the lattice mismatch cushion
For sandwich construction or single layer structure.
9. GaN base light emitting epitaxial structure as claimed in claim 1, it is characterised in that the energy band of the luminescent layer
Gap is in 1.59eV between 5.6eV.
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| CN108630790A (en) * | 2018-05-24 | 2018-10-09 | 华南师范大学 | A kind of deep ultraviolet LED based on AlGaN |
| WO2020127429A1 (en) * | 2018-12-21 | 2020-06-25 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component having an intermediate layer and method for producing the optoelectronic semiconductor component |
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