CN107533145A - 制作半导体x射线检测器的方法 - Google Patents
制作半导体x射线检测器的方法 Download PDFInfo
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- CN107533145A CN107533145A CN201580077775.1A CN201580077775A CN107533145A CN 107533145 A CN107533145 A CN 107533145A CN 201580077775 A CN201580077775 A CN 201580077775A CN 107533145 A CN107533145 A CN 107533145A
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14659—Direct radiation imagers structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Toxicology (AREA)
- Sustainable Development (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2015/075944 WO2016161543A1 (en) | 2015-04-07 | 2015-04-07 | Methods of making semiconductor x-ray detector |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107533145A true CN107533145A (zh) | 2018-01-02 |
CN107533145B CN107533145B (zh) | 2019-03-19 |
Family
ID=57071621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580077775.1A Active CN107533145B (zh) | 2015-04-07 | 2015-04-07 | 制作半导体x射线检测器的方法 |
Country Status (9)
Country | Link |
---|---|
US (4) | US9915741B2 (zh) |
EP (1) | EP3281041B1 (zh) |
JP (1) | JP2018512599A (zh) |
KR (1) | KR102403444B1 (zh) |
CN (1) | CN107533145B (zh) |
IL (1) | IL254537B2 (zh) |
SG (1) | SG11201707510RA (zh) |
TW (1) | TWI676814B (zh) |
WO (1) | WO2016161543A1 (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019148477A1 (en) * | 2018-02-03 | 2019-08-08 | Shenzhen Xpectvision Technology Co., Ltd. | An endoscope |
WO2020010591A1 (en) * | 2018-07-12 | 2020-01-16 | Shenzhen Xpectvision Technology Co., Ltd. | A radiation detector |
WO2020142975A1 (en) * | 2019-01-10 | 2020-07-16 | Shenzhen Xpectvision Technology Co., Ltd. | Semiconductor radiation detector |
CN111587389A (zh) * | 2018-02-03 | 2020-08-25 | 深圳帧观德芯科技有限公司 | 恢复辐射检测器的方法 |
CN111587385A (zh) * | 2018-01-24 | 2020-08-25 | 深圳帧观德芯科技有限公司 | 条带像素检测器 |
CN111587388A (zh) * | 2018-01-24 | 2020-08-25 | 深圳帧观德芯科技有限公司 | 制作辐射检测器的方法 |
CN111656224A (zh) * | 2018-01-25 | 2020-09-11 | 深圳帧观德芯科技有限公司 | 具有量子点闪烁器的辐射检测器 |
CN112384827A (zh) * | 2018-07-12 | 2021-02-19 | 深圳帧观德芯科技有限公司 | 制造辐射探测器的方法 |
CN112385051A (zh) * | 2018-07-12 | 2021-02-19 | 深圳帧观德芯科技有限公司 | 具有银纳米粒子电极的图像传感器 |
CN113302485A (zh) * | 2019-01-10 | 2021-08-24 | 深圳帧观德芯科技有限公司 | 基于外延层的x射线检测器及其制备方法 |
WO2021168693A1 (en) * | 2020-02-26 | 2021-09-02 | Shenzhen Xpectvision Technology Co., Ltd. | Radiation detector |
CN114530466A (zh) * | 2020-11-23 | 2022-05-24 | 京东方科技集团股份有限公司 | 探测基板、其制作方法及射线探测器 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2015152629A1 (ko) * | 2014-04-02 | 2015-10-08 | 엘지전자(주) | 무선 통신 시스템에서 신호를 송수신하기 위한 방법 및 이를 위한 장치 |
IL254537B2 (en) * | 2015-04-07 | 2023-10-01 | Shenzhen Xpectvision Tech Co Ltd | Methods for making semiconductor X-ray detectors |
EP3281040B1 (en) * | 2015-04-07 | 2021-11-24 | Shenzhen Xpectvision Technology Co., Ltd. | Semiconductor x-ray detector |
EP3341756A4 (en) * | 2015-08-27 | 2019-05-22 | Shenzhen Xpectvision Technology Co., Ltd. | X-RAY IMAGING WITH A DETECTOR LIKELY TO RESOLVE PHOTONIC ENERGY |
CN107923987B (zh) * | 2015-09-08 | 2020-05-15 | 深圳帧观德芯科技有限公司 | 用于制作x射线检测器的方法 |
CN105810765B (zh) * | 2016-03-21 | 2017-08-11 | 京东方科技集团股份有限公司 | Pin光电二极管、x射线探测像元、装置及其探测方法 |
US10641912B1 (en) * | 2016-06-15 | 2020-05-05 | Triad National Security, Llc | “4H” X-ray camera |
WO2018006258A1 (en) * | 2016-07-05 | 2018-01-11 | Shenzhen Xpectvision Technology Co., Ltd. | Bonding materials of dissimilar coefficients of thermal expansion |
JP6877772B2 (ja) * | 2016-10-27 | 2021-05-26 | 株式会社リガク | 検出器 |
EP3571529B1 (en) | 2017-01-23 | 2023-03-15 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making semiconductor x-ray detector |
EP3607355B1 (en) | 2017-04-01 | 2023-11-22 | Shenzhen Xpectvision Technology Co., Ltd. | A portable radiation detector system |
CN110892291B (zh) * | 2017-07-26 | 2024-03-12 | 深圳帧观德芯科技有限公司 | X射线检测器 |
CN110914715B (zh) * | 2017-07-26 | 2023-09-22 | 深圳帧观德芯科技有限公司 | 辐射检测器及其制造方法 |
EP3658964A4 (en) * | 2017-07-26 | 2021-01-13 | Shenzhen Xpectvision Technology Co., Ltd. | METHOD OF MANUFACTURING AND USING AN X-RAY DETECTOR |
JP2019033080A (ja) * | 2017-08-04 | 2019-02-28 | エダックス インコーポレイテッドEDAX, Incorporated | 電子顕微鏡における高エネルギーx線検査システム及び方法 |
WO2019080036A1 (en) | 2017-10-26 | 2019-05-02 | Shenzhen Xpectvision Technology Co., Ltd. | RADIATION DETECTOR CAPABLE OF PROCESSING NOISE |
CN111247454B (zh) * | 2017-10-30 | 2023-11-10 | 深圳帧观德芯科技有限公司 | 具有基于mems开关的dc-dc转换器的辐射检测器 |
WO2019084702A1 (en) * | 2017-10-30 | 2019-05-09 | Shenzhen Genorivision Technology Co. Ltd. | A lidar detector with high time resolution |
EP3743742A4 (en) * | 2018-01-24 | 2021-07-28 | Shenzhen Xpectvision Technology Co., Ltd. | PACKAGING RADIATION DETECTORS IN AN IMAGE SENSOR |
JP7170448B2 (ja) * | 2018-07-25 | 2022-11-14 | キヤノン株式会社 | 撮像素子、撮像装置及び信号処理方法 |
WO2020093228A1 (en) * | 2018-11-06 | 2020-05-14 | Shenzhen Xpectvision Technology Co., Ltd. | Packaging methods of semiconductor devices |
FR3099293A1 (fr) * | 2019-07-26 | 2021-01-29 | Université D'aix Marseille | Dispositif monobloc de détection de particules à matériau semi-conducteur |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060050160A1 (en) * | 2002-11-18 | 2006-03-09 | Hamamatsu Photonics K.K. | Photo-detection device |
CN1892250A (zh) * | 2005-06-29 | 2007-01-10 | 通用电气公司 | 具有电绝缘像素的探测器 |
CN102655159A (zh) * | 2011-03-04 | 2012-09-05 | 三星电子株式会社 | 大型x射线探测器 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5464984A (en) * | 1985-12-11 | 1995-11-07 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
US5245191A (en) * | 1992-04-14 | 1993-09-14 | The Board Of Regents Of The University Of Arizona | Semiconductor sensor for gamma-ray tomographic imaging system |
US5389792A (en) | 1993-01-04 | 1995-02-14 | Grumman Aerospace Corporation | Electron microprobe utilizing thermal detector arrays |
JPH08222754A (ja) * | 1995-02-09 | 1996-08-30 | Hitachi Ltd | 半導体x線検出器およびその製造方法 |
JP3545247B2 (ja) * | 1998-04-27 | 2004-07-21 | シャープ株式会社 | 二次元画像検出器 |
JP2002217444A (ja) | 2001-01-22 | 2002-08-02 | Canon Inc | 放射線検出装置 |
US6791091B2 (en) | 2001-06-19 | 2004-09-14 | Brian Rodricks | Wide dynamic range digital imaging system and method |
GB2392308B (en) | 2002-08-15 | 2006-10-25 | Detection Technology Oy | Packaging structure for imaging detectors |
JP2004362905A (ja) | 2003-06-04 | 2004-12-24 | Nippon Telegr & Teleph Corp <Ntt> | 直接メタノール型燃料電池用電解質膜の製造方法 |
JP2005026419A (ja) * | 2003-07-01 | 2005-01-27 | Toshiba Corp | 半導体放射線検出器及びこれを用いた画像診断装置 |
JP4611106B2 (ja) * | 2005-03-11 | 2011-01-12 | 住友重機械工業株式会社 | 放射線検出回路及び放射線検査装置 |
US7456409B2 (en) | 2005-07-28 | 2008-11-25 | Carestream Health, Inc. | Low noise image data capture for digital radiography |
CN1947660B (zh) | 2005-10-14 | 2010-09-29 | 通用电气公司 | 用于多管芯背光照明二极管的***、方法和模块组件 |
WO2007049168A2 (en) | 2005-10-28 | 2007-05-03 | Koninklijke Philips Electronics, N.V. | Method and apparatus for spectral computed tomography |
RU2427858C2 (ru) | 2006-07-10 | 2011-08-27 | Конинклейке Филипс Электроникс, Н.В. | Реконструкция энергетического спектра |
EP2092369B1 (en) | 2006-12-13 | 2011-05-18 | Koninklijke Philips Electronics N.V. | Apparatus and method for counting x-ray photons |
JP4734224B2 (ja) | 2006-12-18 | 2011-07-27 | 本田技研工業株式会社 | バッファ層膜厚測定方法 |
US7606346B2 (en) * | 2007-01-04 | 2009-10-20 | General Electric Company | CT detector module construction |
JP2007187668A (ja) * | 2007-01-15 | 2007-07-26 | Shimadzu Corp | 放射線アレイセンサーの製造方法 |
WO2008093275A2 (en) | 2007-02-01 | 2008-08-07 | Koninklijke Philips Electronics N.V. | Event sharing restoration for photon counting detectors |
US7696483B2 (en) | 2007-08-10 | 2010-04-13 | General Electric Company | High DQE photon counting detector using statistical recovery of pile-up events |
US8592773B2 (en) | 2007-09-27 | 2013-11-26 | Koninklijke Philips N.V. | Processing electronics and method for determining a count result, and detector for an X-ray imaging device |
CN101903802B (zh) | 2007-12-20 | 2013-09-11 | 皇家飞利浦电子股份有限公司 | 直接转换探测器 |
WO2009133481A2 (en) | 2008-04-30 | 2009-11-05 | Koninklijke Philips Electronics N.V. | Counting detector |
CN101644780A (zh) | 2008-08-04 | 2010-02-10 | 北京大学 | 一种闪烁晶体阵列探测装置 |
CA2650066A1 (en) | 2009-01-16 | 2010-07-16 | Karim S. Karim | Photon counting and integrating pixel readout architecture with dynamic switching operation |
JP2010237643A (ja) | 2009-03-09 | 2010-10-21 | Fuji Xerox Co Ltd | 表示媒体、書込装置、及び表示装置 |
US20100327173A1 (en) * | 2009-06-29 | 2010-12-30 | Charles Gerard Woychik | Integrated Direct Conversion Detector Module |
KR101092216B1 (ko) * | 2009-11-30 | 2011-12-13 | 한국전기연구원 | 에너지 선택적 x―선 단일 광자 계수형 독출 칩 및 파일―업 보정 방법 |
CN101862200B (zh) | 2010-05-12 | 2012-07-04 | 中国科学院上海应用物理研究所 | 一种快速x射线荧光ct方法 |
JP5208186B2 (ja) | 2010-11-26 | 2013-06-12 | 富士フイルム株式会社 | 放射線画像検出装置およびその駆動制御方法 |
US8659148B2 (en) * | 2010-11-30 | 2014-02-25 | General Electric Company | Tileable sensor array |
US8575558B2 (en) * | 2010-11-30 | 2013-11-05 | General Electric Company | Detector array with a through-via interposer |
US8548119B2 (en) * | 2011-01-13 | 2013-10-01 | General Electric Company | Multi-slice CT detector with tileable packaging structure |
EP2490441A1 (en) | 2011-02-16 | 2012-08-22 | Paul Scherrer Institut | Single photon counting detector system having improved counter architecture |
JP5508340B2 (ja) | 2011-05-30 | 2014-05-28 | 富士フイルム株式会社 | 放射線画像検出装置及び放射線画像検出装置の制御方法 |
JP5875790B2 (ja) | 2011-07-07 | 2016-03-02 | 株式会社東芝 | 光子計数型画像検出器、x線診断装置、及びx線コンピュータ断層装置 |
WO2013012809A1 (en) | 2011-07-15 | 2013-01-24 | Brookhaven Science Associates, Llc | Radiation detector modules based on multi-layer cross strip semiconductor detectors |
US20130026380A1 (en) * | 2011-07-26 | 2013-01-31 | General Electric Company | Radiation detector with angled surfaces and method of fabrication |
JP6034786B2 (ja) | 2011-07-26 | 2016-11-30 | 富士フイルム株式会社 | 放射線撮影装置及びその制御方法、並びに放射線画像検出装置 |
JPWO2013084839A1 (ja) | 2011-12-09 | 2015-04-27 | ソニー株式会社 | 撮像装置、電子機器、輝尽発光検出スキャナーおよび撮像方法 |
JP2013142578A (ja) | 2012-01-10 | 2013-07-22 | Shimadzu Corp | 放射線検出器 |
CN103296035B (zh) | 2012-02-29 | 2016-06-08 | 中国科学院微电子研究所 | X射线平板探测器及其制造方法 |
DE102012213404B3 (de) | 2012-07-31 | 2014-01-23 | Siemens Aktiengesellschaft | Verfahren zur Temperaturstabilisierung, Röntgenstrahlungsdetektor und CT-System |
DE102012215041A1 (de) | 2012-08-23 | 2014-02-27 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines Halbleiterelementes eines direktkonvertierenden Röntgendetektors |
DE102012215818A1 (de) | 2012-09-06 | 2014-03-06 | Siemens Aktiengesellschaft | Strahlungsdetektor und Verfahren zur Herstellung eines Strahlungsdetektors |
KR101410736B1 (ko) | 2012-11-26 | 2014-06-24 | 한국전기연구원 | 면 광원 일체형의 다층 구조를 가지는 디지털 엑스-선 영상 검출기 |
KR20140132098A (ko) | 2013-05-07 | 2014-11-17 | 삼성전자주식회사 | 엑스선 검출기, 이를 포함하는 엑스선 영상 장치 및 그 제어 방법 |
US9520439B2 (en) | 2013-09-23 | 2016-12-13 | Omnivision Technologies, Inc. | X-ray and optical image sensor |
DE102013219740A1 (de) * | 2013-09-30 | 2015-04-02 | Siemens Aktiengesellschaft | Zählender digitaler Röntgenbilddetektor mit zwei schaltbaren Modi |
CN103715214A (zh) | 2013-12-02 | 2014-04-09 | 江苏龙信电子科技有限公司 | 一种高清晰度数字x射线平板探测器的制造方法 |
US9767986B2 (en) * | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
IL254537B2 (en) * | 2015-04-07 | 2023-10-01 | Shenzhen Xpectvision Tech Co Ltd | Methods for making semiconductor X-ray detectors |
CN107923987B (zh) * | 2015-09-08 | 2020-05-15 | 深圳帧观德芯科技有限公司 | 用于制作x射线检测器的方法 |
-
2015
- 2015-04-07 IL IL254537A patent/IL254537B2/en unknown
- 2015-04-07 CN CN201580077775.1A patent/CN107533145B/zh active Active
- 2015-04-07 US US15/122,488 patent/US9915741B2/en active Active
- 2015-04-07 KR KR1020177026650A patent/KR102403444B1/ko active IP Right Grant
- 2015-04-07 EP EP15888100.3A patent/EP3281041B1/en active Active
- 2015-04-07 SG SG11201707510RA patent/SG11201707510RA/en unknown
- 2015-04-07 WO PCT/CN2015/075944 patent/WO2016161543A1/en active Application Filing
- 2015-04-07 JP JP2018502300A patent/JP2018512599A/ja active Pending
-
2016
- 2016-04-07 TW TW105110956A patent/TWI676814B/zh active
-
2018
- 2018-02-28 US US15/883,528 patent/US10061040B2/en active Active
- 2018-07-20 US US16/040,815 patent/US10228473B2/en active Active
-
2019
- 2019-01-22 US US16/253,614 patent/US10712456B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060050160A1 (en) * | 2002-11-18 | 2006-03-09 | Hamamatsu Photonics K.K. | Photo-detection device |
CN1892250A (zh) * | 2005-06-29 | 2007-01-10 | 通用电气公司 | 具有电绝缘像素的探测器 |
CN102655159A (zh) * | 2011-03-04 | 2012-09-05 | 三星电子株式会社 | 大型x射线探测器 |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111587385A (zh) * | 2018-01-24 | 2020-08-25 | 深圳帧观德芯科技有限公司 | 条带像素检测器 |
CN111587388A (zh) * | 2018-01-24 | 2020-08-25 | 深圳帧观德芯科技有限公司 | 制作辐射检测器的方法 |
CN111656224A (zh) * | 2018-01-25 | 2020-09-11 | 深圳帧观德芯科技有限公司 | 具有量子点闪烁器的辐射检测器 |
WO2019148477A1 (en) * | 2018-02-03 | 2019-08-08 | Shenzhen Xpectvision Technology Co., Ltd. | An endoscope |
US11906677B2 (en) | 2018-02-03 | 2024-02-20 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of recovering radiation detector |
US11737651B2 (en) | 2018-02-03 | 2023-08-29 | Shenzhen Xpectvision Technology Co., Ltd. | Endoscope |
CN111587389A (zh) * | 2018-02-03 | 2020-08-25 | 深圳帧观德芯科技有限公司 | 恢复辐射检测器的方法 |
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CN112449685A (zh) * | 2018-07-12 | 2021-03-05 | 深圳帧观德芯科技有限公司 | 辐射检测器 |
US11918394B2 (en) | 2018-07-12 | 2024-03-05 | Shenzhen Xpectvision Technology Co., Ltd. | Radiation detector |
WO2020010591A1 (en) * | 2018-07-12 | 2020-01-16 | Shenzhen Xpectvision Technology Co., Ltd. | A radiation detector |
TWI818032B (zh) * | 2018-07-12 | 2023-10-11 | 大陸商深圳幀觀德芯科技有限公司 | 檢測器、成像系統、貨物掃描或非侵入式檢查系統、全身掃描系統、輻射電腦斷層掃描系統及電子顯微鏡 |
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US11442183B2 (en) | 2019-01-10 | 2022-09-13 | Shenzhen Xpectvision Technology Co., Ltd. | Semiconductor radiation detector |
WO2020142975A1 (en) * | 2019-01-10 | 2020-07-16 | Shenzhen Xpectvision Technology Co., Ltd. | Semiconductor radiation detector |
CN113302485A (zh) * | 2019-01-10 | 2021-08-24 | 深圳帧观德芯科技有限公司 | 基于外延层的x射线检测器及其制备方法 |
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WO2021168693A1 (en) * | 2020-02-26 | 2021-09-02 | Shenzhen Xpectvision Technology Co., Ltd. | Radiation detector |
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US20180180749A1 (en) | 2018-06-28 |
US9915741B2 (en) | 2018-03-13 |
IL254537A0 (en) | 2017-11-30 |
WO2016161543A1 (en) | 2016-10-13 |
JP2018512599A (ja) | 2018-05-17 |
US20180348383A1 (en) | 2018-12-06 |
SG11201707510RA (en) | 2017-10-30 |
TWI676814B (zh) | 2019-11-11 |
IL254537B2 (en) | 2023-10-01 |
IL254537B1 (en) | 2023-06-01 |
KR20180003533A (ko) | 2018-01-09 |
US10228473B2 (en) | 2019-03-12 |
US10061040B2 (en) | 2018-08-28 |
EP3281041A1 (en) | 2018-02-14 |
US10712456B2 (en) | 2020-07-14 |
CN107533145B (zh) | 2019-03-19 |
TW201636640A (zh) | 2016-10-16 |
US20180017687A1 (en) | 2018-01-18 |
EP3281041A4 (en) | 2018-12-12 |
KR102403444B1 (ko) | 2022-05-30 |
US20190170885A1 (en) | 2019-06-06 |
EP3281041B1 (en) | 2020-06-10 |
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