CN107507866B - 一种多晶氧化物柔性薄膜晶体管及其制备方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 230000006698 induction Effects 0.000 claims abstract description 20
- 238000002425 crystallisation Methods 0.000 claims abstract description 8
- 230000008025 crystallization Effects 0.000 claims abstract description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 238000004549 pulsed laser deposition Methods 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000001939 inductive effect Effects 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 229910000583 Nd alloy Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
本发明属于柔性显示器件技术领域,公开了一种多晶氧化物柔性薄膜晶体管及其制备方法。所述多晶氧化物柔性薄膜晶体管由依次层叠的硬质衬底、柔性衬底、栅极、栅极绝缘层、有源层和源/漏电极构成,所述有源层具有诱导层和多晶氧化物半导体层的双层结构,其中诱导层位于栅极绝缘层一侧。本发明的薄膜晶体管有源层具有诱导层和多晶氧化物半导体层的双层结构,通过诱导层表面的金属离子诱导多晶氧化物半导体晶化,改善结晶性,提升薄膜晶体管的性能,能够在室温下实现高性能的柔性薄膜晶体管。
Description
技术领域
本发明属于柔性显示器件技术领域,具体涉及一种多晶氧化物柔性薄膜晶体管及其制备方法。
背景技术
柔性显示具有非常广泛的应用前景,例如,腕表、汽车仪表盘、可折叠手机和可弯曲电视等。薄膜晶体管(Thin Film Transistor,TFT)是柔性显示重要的组成薄膜,柔性显示器的每一个像素都需要2个TFT和一个电容来驱动。
柔性显示最大的特点就是可弯曲性,其弯曲需要依靠柔性衬底来实现。目前,大部分柔性显示都用PI衬底。因为PI衬底耐温度高,能够承受较高的工艺温度。但是,PI衬底透光性差,价格较贵。相比较而言,PET和PEN柔性衬底具有非常好的透明度(~90%),良好的力学性能,价格便宜和较高的阻隔水氧能力等,被认为在柔性显示领域具有巨大的应用前景。但是,PET和PEN衬底的熔点只有150℃和180℃,因此,未来柔性显示的制备工艺温度应该足够的低来匹配PET和PEN衬底。
多晶氧化物薄膜晶体管(Poly-crystalline Oxide Thin film Transistor,P-Oxide TFT)是常见的薄膜晶体管之一,例如ZnO TFT。P-Oxide TFT的性能受到晶界的影响非常大,需要改善其结晶性来提高器件性能。目前,改善多晶氧化物结晶性的方法主要有高温再结晶和激光晶化的方式。高温再结晶通常需要的温度超过300℃,不合适用于柔性衬底。而激光具有较高的能量,照射在薄膜上会带来热积累效应,其温度也会超过柔性衬底的熔点,破坏衬底。
发明内容
针对以上现有技术存在的缺点和不足之处,本发明的首要目的在于提供一种多晶氧化物柔性薄膜晶体管。
本发明的另一目的在于提供上述多晶氧化物柔性薄膜晶体管的制备方法。
本发明目的通过以下技术方案实现:
一种多晶氧化物柔性薄膜晶体管,由依次层叠的硬质衬底、柔性衬底、栅极、栅极绝缘层、有源层和源/漏电极构成,所述有源层具有诱导层和多晶氧化物半导体层的双层结构,其中诱导层位于栅极绝缘层一侧。
进一步地,所述栅极的材料为Al:Nd。
进一步地,所述栅极绝缘层的材料为Al2O3:Nd。
进一步地,所述诱导层的材料为Al2O3、CuO或岛状生长的Ag、Cu或Au。
进一步地,所述多晶氧化物半导体层的材料为ZnO或ZnO基掺杂的半导体。
进一步地,所述多晶氧化物半导体层上还沉积一层Al2O3薄膜钝化层。
进一步地,所述源/漏电极的材料为Au、Ag、Cu或Al。
上述多晶氧化物柔性薄膜晶体管的制备方法,具体制备步骤及顺序如下:
(1)首先在硬质衬底上旋涂一层PI溶液,烘干作为柔性衬底,然后在柔性衬底上通过磁控溅射、真空蒸镀或脉冲激光沉积(Pulsed Laser Deposition,简称PLD)的方法制备栅极;
(2)通过原子层沉积、磁控溅射、PLD或阳极氧化的方法制备栅极绝缘层;
(3)接着沉积有源层,有源层由诱导层和多晶氧化物半导体双层结构构成,先沉积诱导层,其厚度小于10nm,然后沉积多晶氧化物半导体层;
(4)最后通过磁控溅射、真空蒸镀或PLD的方法沉积源/漏电极,得到所述多晶氧化物柔性薄膜晶体管。
进一步地,所述有源层通过PLD的方法在室温制备而成,且后期不需要退火处理。
本发明原理为:由于诱导层表面分布着大量金属离子,会一定程度地扩散到金属氧化物半导体中,极大地降低其晶化激活能,促进其晶化。
相对于现有技术,本发明的薄膜晶体管具有如下优点及有益效果:
本发明提供了一种室温晶化的方式来改善多晶氧化物薄膜的结晶性,提升TFT性能,解决了退火晶化和激光晶化损坏柔性衬底的问题,完全能够转移到柔性显示的应用中。本发明能够在室温下实现高性能的柔性薄膜晶体管。
附图说明
图1是本发明制备的一种多晶氧化物柔性薄膜晶体管的结构示意图,其中,01-硬质衬底,02-柔性衬底,03-栅极,04-栅极绝缘层,05-诱导层,06-多晶氧化物半导体层,07-钝化层,08-源/漏电极。
图2是本发明制备的有诱导层和没有诱导层的有源层薄膜的X射线衍射对比图。
图3是本发明制备的有诱导层和没有诱导层的薄膜晶体管性能对比图。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述,但本发明的实施方式不限于此。
实施例1
本实施例的一种多晶氧化物柔性薄膜晶体管,其结构示意图如图1所示,由依次层叠的硬质衬底01、柔性衬底02、栅极03、栅极绝缘层04、诱导层05、多晶氧化物半导体层06、钝化层07和源/漏电极08构成。
具体通过脉冲激光沉积方式制备有源层,且不进行退火处理。器件在柔性衬底PI上制备,具体步骤如下:
本实施例的薄膜晶体管通过如下方法制备得到:
(1)首先在玻璃衬底上旋涂一层PI溶液,低温烘干作为柔性衬底。室温下在柔性PI衬底上直流磁控溅射沉积Al:Nd合金,作为栅极,厚度约300nm;
(2)通过室温阳极氧化将其中200nm的Al:Nd合金氧化为Al2O3:Nd,作为栅极绝缘层;
(3)有源层通过PLD在室温制备而成,分别由诱导层和多晶氧化物薄膜组成。先用PLD沉积一层Al2O3薄膜作为诱导层,其厚度约4nm。工艺参数为:激光能量305mJ,频率为5Hz,在纯氧气气氛中沉积,压强为10mTorr,脉冲数为350。再用PLD沉积一层多晶氧化物掺铝氧化锌(Aluminum doped Zinc Oxide,AZO),其厚度为4.5nm。工艺参数为:激光能量305mJ,频率为5Hz,在纯氧气气氛中沉积,压强为10mTorr,脉冲数为450。最后又沉积了一层Al2O3薄膜,作为钝化层,用于阻隔水氧,防止空气中的水氧进入影响TFT性能。其工艺参数与诱导层一致。
(4)室温下用真空蒸镀方式沉积源/漏电极,得到所述多晶氧化物柔性薄膜晶体管(Al2O3/AZO/Al2O3TFT)。
图2是本实施例中有诱导层和没有诱导层的有源层薄膜的X射线衍射图对比。为了对比诱导层的作用,我们制备了没有诱导层的薄膜晶体管(AZO/Al2O3TFT)。对比AZO/Al2O3薄膜,Al2O3/AZO/Al2O3薄膜的衍射峰明显要强,说明AZO的结晶性改善。这是因为在AZO沉积过程中,Al2O3能够室温诱导AZO晶化。
图3为本实施例中基于PI衬底的有诱导层和没有诱导层的薄膜晶体管的转移特性曲线对比。薄膜晶体管的性能用Agilent 4155C半导体***分析仪测试,测试在室温大气环境进行。横坐标是栅极电压(VG),纵坐标是源漏电流(ID)。从图3可以看出,由于Al2O3诱导AZO晶化的作用,相比于AZO/Al2O3TFT,Al2O3/AZO/Al2O3TFT的场效应迁移率由3.2cm2V-1s-1提升至11.4cm2V-1s-1。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其它的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (8)
1.一种多晶氧化物柔性薄膜晶体管,由依次层叠的硬质衬底、柔性衬底、栅极、栅极绝缘层、有源层和源/漏电极构成,其特征在于:所述有源层具有诱导层和多晶氧化物半导体层的双层结构,其中诱导层位于栅极绝缘层一侧;
所述多晶氧化物半导体通过室温晶化得到;
所述有源层通过 PLD 的方法在室温制备而成,且不需要退火处理。
2.根据权利要求 1 所述的一种多晶氧化物柔性薄膜晶体管,其特征在于: 所述栅极的材料为 Al:Nd。
3.根据权利要求 1 所述的一种多晶氧化物柔性薄膜晶体管,其特征在于: 所述栅极绝缘层的材料为 Al2O3:Nd。
4.根据权利要求 1 所述的一种多晶氧化物柔性薄膜晶体管,其特征在于: 所述诱导层的材料为 Al2O3、CuO 或岛状生长的 Ag、Cu 或 Au。
5.根据权利要求 1 所述的一种多晶氧化物柔性薄膜晶体管,其特征在于: 所述多晶氧化物半导体层的材料为 ZnO 或 ZnO 基掺杂的半导体。
6.根据权利要求 1 所述的一种多晶氧化物柔性薄膜晶体管,其特征在于: 所述多晶氧化物半导体层上还沉积一层 Al2O3 薄膜钝化层。
7.根据权利要求 1 所述的一种多晶氧化物柔性薄膜晶体管,其特征在于: 所述源/漏电极的材料为 Au、Ag、Cu 或 Al。
8.权利要求 1~7 任一项所述的一种多晶氧化物柔性薄膜晶体管的制备方法, 其特征在于具体制备步骤及顺序如下:
(1)首先在硬质衬底上旋涂一层 PI 溶液,烘干作为柔性衬底,然后在柔性衬底上通过磁控溅射、真空蒸镀或PLD 的方法制备栅极;
(2)通过原子层沉积、磁控溅射、PLD 或阳极氧化的方法制备栅极绝缘层;
(3)接着沉积有源层,有源层由诱导层和多晶氧化物半导体双层结构构成, 先沉积诱导层,其厚度小于 10 nm,然后沉积多晶氧化物半导体层;
(4)最后通过磁控溅射、真空蒸镀或 PLD 的方法沉积源/漏电极,得到所述多晶氧化物柔性薄膜晶体管。
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CN207038532U (zh) * | 2017-07-17 | 2018-02-23 | 华南理工大学 | 一种多晶氧化物柔性薄膜晶体管 |
Non-Patent Citations (1)
Title |
---|
Rihui Yao等.All-Aluminum Thin Film Transistor Fabrication at Room Temperature.《Materials》.2017,第1-6页. * |
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