CN108336135B - 一种钕铟锌氧化物薄膜晶体管及其制备方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 27
- WRUQSLCBPZOMBX-UHFFFAOYSA-N [O-2].[Zn+2].[Nd+3].[In+3].[O-2].[O-2].[O-2] Chemical compound [O-2].[Zn+2].[Nd+3].[In+3].[O-2].[O-2].[O-2] WRUQSLCBPZOMBX-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000012212 insulator Substances 0.000 claims abstract description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229920002457 flexible plastic Polymers 0.000 claims description 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical group O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 abstract description 3
- 239000013077 target material Substances 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
本发明属于显示器件技术领域,公开了一种钕铟锌氧化物薄膜晶体管及其制备方法。所述薄膜晶体管由基板、金属栅极、栅极绝缘层、Nd‑IZO半导体有源层、氧化物绝缘体钝化层和金属源漏电极构成。本发明在IZO半导体靶材中引入一定比例的Nd元素掺杂,通过室温溅射工艺沉积Nd‑IZO高载流子浓度有源层薄膜,结合超薄Al2O3钝化层对电场下的载流子运输进行控制,可以优化器件的电学性能,以获得高性能的薄膜晶体管。
Description
技术领域
本发明属于显示器件技术领域,具体涉及一种钕铟锌氧化物薄膜晶体管及其制备方法。
背景技术
薄膜晶体管(Thin Film Transistor,简称TFT),是一种用途广泛的半导体器件,其最重要的用途是在显示器中用于驱动液晶排列变化、以及驱动OLED像素发光。金属氧化物TFT(简称,MOS TFT)具有迁移率高、均匀性好、透明度佳、工艺简单等优点,在近年得到了广泛的研究和快速的发展。目前,用于MOS TFT有源层的材料大多为基于氧化铟或氧化锌(In2O3、ZnO或IZO)掺杂的氧化物半导体材料。In2O3、ZnO或IZO都具有较高的载流子浓度,因而具备较强的电荷传输能力,可以有效驱动TFT器件工作,有利于以低温或室温工艺实现高性能的MOS TFT。然而,其过高的载流子浓度也会带来器件稳定性差和关态电流难以抑制的问题。为了解决这个问题,行业中最主流的方式是通过稀土元素的掺杂实现对载流子浓度的抑制,目前以镓(Ga)元素掺杂的应用最为广泛。然而,Ga元素的掺入也使载流子的迁移率大幅降低,在仅采用低温或室温工艺的情况下将难以实现更高性能的MOS TFT。这不利于工艺温度有限的柔性显示器件实现更高性能的发展。
发明内容
针对以上现有技术存在的缺点和不足之处,本发明的首要目的在于提供一种钕铟锌氧化物薄膜晶体管。本发明薄膜晶体管以Nd掺杂IZO作为有源层,可在室温工艺的情况下实现更高性能的MOS TFT。
本发明的另一目的在于提供上述钕铟锌氧化物薄膜晶体管的制备方法。该方法能够以室温工艺制备出高性能的钕铟锌氧化物(Nd-IZO)有源层,提高TFT的电学性能。
本发明目的通过以下技术方案实现:
一种钕铟锌氧化物薄膜晶体管,所述薄膜晶体管的有源层为钕铟锌氧化物(Nd-IZO)。
进一步地,所述钕铟锌氧化物薄膜晶体管由基板、金属栅极、栅极绝缘层、Nd-IZO半导体有源层、氧化物绝缘体钝化层和金属源漏电极构成。
进一步地,所述基板是指玻璃基板或柔性塑料基板。
进一步地,所述金属栅极的材料为Al、Mo或Cu。
进一步地,所述Nd-IZO由Nd2O3、In2O3和ZnO成分构成,优选Nd2O3:In2O3:ZnO的质量百分含量比为1%:62.5%:36.5%。
进一步地,所述Nd-IZO半导体有源层的厚度为9nm。
进一步地,所述氧化物绝缘体钝化层为非晶型氧化铝(Al2O3);优选氧化物绝缘体钝化层的厚度为3nm。
进一步地,所述金属源漏电极的材料为Al、Mo或Cu。
上述钕铟锌氧化物薄膜晶体管的制备方法,包括如下制备步骤:
(1)室温下通过直流溅射在基板上制备TFT金属栅极;
(2)室温下通过阳极氧化法将一部分栅极氧化成栅极绝缘层;
(3)室温下通过射频溅射制备Nd-IZO半导体有源层;
(4)室温下通过射频溅射制备氧化物绝缘体钝化层;
(5)室温下通过直流溅射制备金属源漏电极。
相对于现有技术,本发明具有如下优点及有益效果:
本发明的方法不需要热处理等额外工艺,只需通过在IZO半导体靶材中引入一定比例的Nd元素掺杂,通过室温溅射工艺沉积Nd-IZO有源层薄膜,结合超薄Al2O3钝化层对电场下的载流子运输进行控制,在室温下实现高性能(高迁移率、高电流开关比)的氧化物薄膜晶体管,体现出了工艺简单、耗时短、节约能源和适用于柔性显示未来发展的潜力。
附图说明
图1为本发明实施例中所得钕铟锌氧化物薄膜晶体管的结构示意图。
图2为本发明实施例所得钕铟锌氧化物薄膜晶体管的输出特性曲线图。
图3为本发明实施例所得钕铟锌氧化物薄膜晶体管的转移特性曲线图。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述,但本发明的实施方式不限于此。
实施例
本实施例的一种室温制备钕铟锌氧化物薄膜晶体管的方法,具体步骤如下:
(1)室温下通过直流溅射法在玻璃基板上沉积300nm Al金属薄膜并用掩膜板图形化,作为栅极;
(2)室温下通过阳极氧化法将栅极中200nm的Al氧化成Al2O3作为栅极绝缘层;
(3)室温下通过射频溅射法制备Nd-IZO半导体有源层,所述钕铟锌氧化物中各材料成分比(Nd2O3:In2O3:ZnO wt.%)为1:62.5:36.5wt.%。溅射总压强为3mTorr,溅射气氛为Ar/O2=100/5的混合气体,射频电源功率为60W,溅射时间为215s;得到所述的Nd-IZO半导体有源层的厚度约为9nm;
(4)室温下通过射频溅射制备超薄Al2O3钝化层,溅射总压强为1mTorr,溅射气氛为纯Ar氛围,射频电源功率为120W,溅射时间为130s;得到所述的Al2O3钝化层的厚度约为3nm;
(5)室温下通过直流溅射法沉积200nm Al金属并用掩膜板图形化,作为源漏电极,其中沟道宽度为500μm,沟道长度为100μm。
本实施例所得钕铟锌氧化物薄膜晶体管的结构示意图如图1所示。其结构由基板01、栅极02、栅极绝缘层03、有源层04、钝化层05和源漏电极06组成。
本实施例所得钕铟锌氧化物薄膜晶体管的输出特性曲线如图2所示,转移曲线如图3所示。根据图3结果计算的具体参数如表1所示。
表1根据图3结果计算的TFT电学性能参数
由以上结果可以看出,通过在IZO半导体靶材中引入一定比例的Nd元素掺杂,通过室温溅射工艺沉积Nd-IZO有源层薄膜,结合超薄Al2O3钝化层对电场下的载流子运输进行控制,可以优化器件的电学性能,以获得高性能的薄膜晶体管。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其它的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (4)
1.一种钕铟锌氧化物薄膜晶体管的制备方法,其特征在于包括如下制备步骤:
(1)室温下通过直流溅射在基板上制备TFT金属栅极;
(2)室温下通过阳极氧化法将一部分栅极氧化成栅极绝缘层;
(3)室温下通过射频溅射制备Nd-IZO半导体有源层;
(4)室温下通过射频溅射制备氧化物绝缘体钝化层;
(5)室温下通过直流溅射制备金属源漏电极;
所述薄膜晶体管由基板、金属栅极、栅极绝缘层、Nd-IZO半导体有源层、氧化物绝缘体钝化层和金属源漏电极构成;所述Nd-IZO由Nd2O3、In2O3和ZnO成分构成;所述Nd2O3:In2O3:ZnO的质量百分含量比为1%:62.5%:36.5%;所述Nd-IZO半导体有源层的厚度为9nm;所述氧化物绝缘体钝化层为非晶型氧化铝,氧化物绝缘体钝化层的厚度为3nm。
2.根据权利要求1所述的一种钕铟锌氧化物薄膜晶体管的制备方法,其特征在于:所述基板是指玻璃基板或柔性塑料基板。
3.根据权利要求1所述的一种钕铟锌氧化物薄膜晶体管的制备方法,其特征在于:所述金属栅极的材料为Al、Mo或Cu。
4.根据权利要求1所述的一种钕铟锌氧化物薄膜晶体管的制备方法,其特征在于:所述金属源漏电极的材料为Al、Mo或Cu。
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