CN107507799B - 溶胶凝胶涂布的支撑环 - Google Patents
溶胶凝胶涂布的支撑环 Download PDFInfo
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- CN107507799B CN107507799B CN201710619540.1A CN201710619540A CN107507799B CN 107507799 B CN107507799 B CN 107507799B CN 201710619540 A CN201710619540 A CN 201710619540A CN 107507799 B CN107507799 B CN 107507799B
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Abstract
描述了一种用于热处理腔室的支撑构件。所述支撑构件于至少一个表面上具有溶胶涂层。所述溶胶涂层含有阻挡预期波长或光谱的辐射的材料,使得所述辐射无法透过所述支撑构件的材料。所述溶胶涂层可为多层结构,除了辐射阻挡层以外,所述多层结构可还包含粘接层、过渡层与覆盖层。
Description
本申请是申请日为2014年10月22日、申请号为201480058904.8、发明名称为“溶胶凝胶涂布的支撑环”的发明专利申请的分案申请。
技术领域
本公开内容的实施方式大体涉及用于处理半导体基板的方法和装置。更特定地,涉及一种用于热处理半导体基板的方法和装置。
背景技术
热处理在半导体工业中是常见的。热处理被用于激活半导体基板中的化学与物理变化,以重新组织基板的原子结构与成分。在一种被称为快速热处理(Rapid ThermalProcessing)的常用方式中,基板以高达400℃/秒的速率被加热至目标温度,保持在该目标温度达一短时间(比如1秒),然后再快速冷却至不会发生进一步变化的温度下。
为了促进基板上所有区域的均匀处理,一般会布设温度传感器,以监测基板的不同位置处的温度。高温计被广泛地用来测量基板的温度。基板温度的控制与测量以及因此的局部层形成条件的控制与测量,都会因腔室部件的热吸收与光发射、以及传感器与腔室表面对处理腔室内的处理条件的暴露而变得复杂。仍需要有一种具有改进的温度控制、温度测量的热处理腔室,以及这种腔室的操作方法,以提高均匀性和可重复性。
发明内容
本文中所描述的实施方式涉及一种用于热处理腔室的支撑构件,所述支撑构件具有主体与溶胶涂层,所述主体包括硅氧化物,所述主体具有面向辐射侧与非面向辐射侧,所述溶胶涂层在至少所述非面向辐射侧上。所述溶胶涂层可具有二氧化硅(silica)层、硅层与覆盖层。此层结构可具有渐变成分(graded composition),且可具有一或多层过渡层。也可对支撑构件的其他表面施加溶胶涂层。
附图说明
为能使上述记载特征可被详细理解,可通过参照实施方式获得更为特定的描述,一些实施方式被描述于附图中。然而,应注意的是,附图仅示出典型实施方式,因此不应被视为对范围的限制,因为其他实施方式也是等同有效的。
图1为快速热处理(RTP)腔室的一个实施方式的简化等距视图,所述RTP腔室具有根据一实施方式的支撑环。
图2为根据另一实施方式的支撑环的截面图。
图3是根据另一实施方式的支撑构件的截面图。
为帮助理解,已尽可能使用相同的标号来表示各图共用的相同元件。应理解在一个实施方式中所揭露的元件可有利地用于其他实施方式,而无需特别详述。
具体实施方式
图1是快速热处理腔室100的一个实施方式的简化等距视图。可被应用而自本发明得利的快速热处理腔室的实例为VULCANTM与热处理***,这两者都可从位于加州圣克拉拉市的应用材料公司获得。虽然所述装置被描述为使用于快速热处理腔室中,但本文所述的实施方式亦可用于在一个处理区域中需要至少两个温度区的其他处理***及装置中,比如适用于机械手切换的基板支撑平台、定向装置、沉积腔室、蚀刻腔室、电化学处理装置与化学机械抛光装置等,特别是在需要使粒状物产生减至最低限度者。
处理腔室100包含无接触式或磁性悬浮基板支撑件104、腔室主体102,腔室主体102具有界定内部空间120的壁部108、底部110与顶部112。壁部108一般包含至少一个基板进出口148,以便于基板140的进出(图1中显示了基板140的一部分)。进出口可耦接至移送腔室(未示)或负载锁定腔室(load lock chamber)(未示),且可选择性地由阀密封,比如狭缝阀(未示)。在一个实施方式中,基板支撑件104为环形,且腔室100包含设于基板支撑件104内径中的辐射加热源106。
基板支撑件104适于在内部空间120中磁性悬浮及旋转。基板支撑件104可在处理中旋转、同时垂直上升与下降,也可在处理前、处理中或处理后在不旋转的情况下上升与下降。磁性悬浮和/或磁性旋转避免颗粒产生或使颗粒产生减至最低,这是因为没有、或减少了一般为上升/下降和/或旋转基板支撑件所需要的移动部件。
基板支撑件104具有支撑圆筒154、支撑环150和边缘环152。支撑环150设于支撑圆筒154上,而边缘环152设于支撑环150上且与支撑环150套叠(nest)。边缘环152具有基板支撑表面,以接收基板以进行处理。边缘环可为石英、非晶二氧化硅、或碳化硅,且可涂布有碳化硅。支撑环150可为石英、泡沫石英、非晶石英、或非晶二氧化硅。支撑环150具有溶胶涂层,溶胶涂层阻挡来自辐射加热源106的光的传输。
腔室100还包含由对各种波长的光(可包含红外(IR)光谱中的光)和热透明的材料制成的窗部114,来自辐射加热源106的光子透过窗部114而加热基板140。在一个实施方式中,窗部114由石英材料制成,但也可使用可透光的其他材料,比如蓝宝石。窗部114还可包含多个升降销144,升降销144耦接至窗部114的上表面,且用于选择性地接触及支撑基板140,以帮助将基板移送进出腔室100。多个升降销144中的每一个都被配置为使对来自辐射加热源106的能量的吸收减至最低,且可由与用于窗部114的相同的材料制成,比如石英材料。多个升降销144可被定位且彼此径向间隔开,以便于耦接至移送机械手(未示)的终端受动器通过。或者,终端受动器和/或机械手可进行水平与垂直移动,以有助于基板140的移送。
在一个实施方式中,辐射加热源106包括由外壳形成的灯组件,所述外壳包含在耦接至冷却剂源183的冷却剂组件(未示)中的多个蜂巢状管160。冷却剂源183可为水、乙二醇、氮(N2)和氦(He)中的一个或是它们的组合。外壳可由铜材料或其他合适的材料制成,外壳中形成有合适的冷却剂通道,以供来自冷却剂源183的冷却剂流动。每一个管160可含有反射器和高强度灯组件或IR发射器,且蜂巢状管路排列由管160形成。这种紧密堆排的六角形管路排列使辐射能量源具有高功率密度和良好的空间分辨率。在一个实施方式中,辐射加热源106提供充足的辐射能量,以对基板进行热处理,例如对沉积在基板140上的硅层进行退火。辐射加热源106进一步包含环形区,其中通过控制器124供给至多个管160的电压可变化,以增强来自管160的能量的径向分布。可由用于测量横跨基板140的温度的一个或多个温度传感器117(将于下文中更详细说明)来对基板140的加热进行动态控制。
定子组件118围绕腔室主体102的壁部108,并且耦接至一个或多个致动器组件122,致动器组件122控制定子组件118沿腔室主体102的外部的高度(elevation)。在一个实施方式(未示)中,腔室100包含三个致动器组件122,这三个致动器组件122径向地设置在腔室主体周围,例如在腔室主体102周围呈约120°角。定子组件118磁性耦接至设置在腔室主体102的内部空间120内的基板支撑件104。基板支撑件104可包括或包含磁性部分以作为转子,因而产生磁性轴承组件以升举和/或旋转基板支撑件104。在一个实施方式中,基板支撑件104的至少一部分由耦接至流体源186的槽(未示)部分围绕,流体源186可包括水、乙二醇、氮(N2)、氦(He)或它们的组合,作为基板支撑件的热交换媒介。定子组件118还可包括外壳190,以包围定子组件118的各个部分与部件。在一个实施方式中,定子组件118包括驱动线圈组件168,所述驱动线圈组件168叠置在悬浮线圈组件170上。驱动线圈组件168用于旋转和/或升起/降低基板支撑件104,而悬浮线圈组件170可用于使基板支撑件104在处理腔室100内被动地居中。或者,可由具有单一线圈组件的定子来执行旋转和居中功能。
气氛控制***164也耦接至腔室主体102的内部空间120。气氛控制***164一般包含节流阀和真空泵,以用于控制腔室压力。气氛控制***164可另外包含气源,以用于向内部空间120提供处理气体或其他气体。气氛控制***164也可用于输送供热沉积工艺所用的处理气体。
腔室100还包含控制器124,控制器124通常包含中央处理单元(CPU)130、支持电路128和存储器126。CPU 130可为任何形式的计算机处理器的一种,能用于工业设定以控制各个动作和子处理器。存储器126(或计算机可读媒介)可为容易获得的存储器(比如随机存取存储器(Random Access Memory,RAM)、只读存储器(Read Only Memory,ROM)、软盘、硬盘)或任何其他形式的数字储存器(本地或远程)中的一或多种,且通常耦接至CPU 130。支持电路128耦接至CPU 130,以常规方式来支持控制器124。这些电路包括高速缓冲存储器、电源、时钟电路、输入/输出电路、子***及类似装置。
在一个实施方式中,每一个致动器组件122都通常包含精密导螺杆132,精密导螺杆132耦接在从腔室主体102的壁部108延伸的两个凸缘134之间。导螺杆132具有螺母158,当螺杆旋转时,螺母158沿着导螺杆132而轴向行进。耦接部136耦接于定子118与螺母158之间,使得当导螺杆132旋转时,耦接部136沿着导螺杆132移动以控制定子118在与耦接部136间的交界处的高度。因此,当致动器122中的一个致动器的导螺杆132旋转以产生其他致动器122的螺母158之间的相对位移时,定子118的水平平面即相对于腔室主体102的中心轴而改变。
在一个实施方式中,电机138(比如步进式或伺服电机)耦接至导螺杆132,以响应控制器124的信号而提供可控制旋转。或者,可使用其他类型的致动器122来控制定子118的线性位置,比如气压缸、液压缸、滚珠螺杆、螺线管(solenoid)、线性致动器和凸轮从动件等。
腔室100还包含一或多个传感器116,传感器116通常用于检测基板支撑件104(或基板140)在腔室主体102的内部空间120内的高度。传感器116可耦接至腔室主体102和/或处理腔室100的其他部分,且适于提供表示基板支撑件104与腔室主体102的顶部112和/或底部110之间距离的输出,且也可检测基板支撑件104和/或基板140的错位。
一或多个传感器116耦接至控制器124,控制器124接收来自传感器116的输出量度(output metric),并对一或多个致动器组件122提供一或多个信号以使基板支撑件104的至少一部分上升或下降。控制器124可使用从传感器116获取的位置量度来调整定子118在每一个致动器组件122处的高度,以使得基板支撑件104与座落在基板支撑件104上的基板140的高度与平面度皆可相对于RTP腔室100的中心轴和/或辐射加热源106而调整。举例而言,控制器124可提供信号以通过一个致动器122的动作而提升基板支撑件,以修正基板支撑件104的轴向错位,或者控制器可对所有致动器122提供信号,以促进基板支撑件104的同时垂直移动。
一或多个传感器116可为超音波式、激光式、电感式、电容式、或其他类型的传感器,这些传感器能检测到腔室主体102内基板支撑件104的近邻位置(proximity)。传感器116可耦接至靠近顶部112的腔室主体102或耦接至壁部108,但在腔室主体102内或周围的其他位置也可以是合适的,比如耦接至在腔室100外部的定子118。在一个实施方式中,一或多个传感器116可耦接至定子118,并且适于透过壁部108感测基板支撑件104(或基板140)的高度和/或位置。在这个实施方式中,壁部108可包含较薄的截面,以促进透过壁部108的位置感测。
腔室100还包含一或多个温度传感器117,温度传感器117可适于在处理前、中及后感测基板140的温度。在图1所描绘的实施方式中,温度传感器117被设置通过顶部112,但在腔室主体102内或周围的其他位置也是可用的。温度传感器117可为光学高温计,例如具有光纤探头的高温计。传感器117可适于以感测基板的整个直径、或感测基板的一部分的配置方式耦接至顶部112。传感器117可包括界定实质上相当于基板直径的感测区域、或者实质上相当于基板半径的感测区域的图案。举例而言,多个传感器117可以径向或线性配置方式耦接至顶部112,以产生在整个基板半径或直径上的感测区域。在一个实施方式中(未示),多个传感器117可设于从顶部112的中心附近径向延伸至顶部112的周边部分的直线中。以这个方式,基板的半径可受传感器117监测,这将使得在旋转期间能感测基板的直径。
RTP腔室100还包含冷却块180,冷却块180与顶部112相邻、耦接至顶部112或形成于顶部112中。一般而言,冷却块180与辐射加热源106间隔开且与辐射加热源106相对。冷却块180包含耦接至进口181A和出口181B的一或多个冷却剂通道184。冷却块180可由耐受工艺的材料制成,比如不锈钢、铝、聚合物或陶瓷材料。冷却剂通道184可包含螺旋图案、矩形图案、圆形图案或这些图案的组合,且通道184可一体地形成在冷却块180内,例如通过铸造冷却块180,和/或由两个或更多个部件接合在一起而制成冷却块180。附加地或替代地,冷却剂通道184可钻孔至冷却块180中。
如本文所述,腔室100适于以“面向上”的方向来接收基板,其中基板的沉积物接收侧或面被定向为朝向冷却块180,而基板的“背侧”面向辐射加热源106。“面向上”的方向可使得来自辐射加热源106的能量更快速地被基板140吸收,因为基板的背侧通常比基板正面较不具反射性。
虽然冷却块180与辐射加热源106被描述为分别位于内部空间120的上部与下部,但是冷却块180与辐射加热源106的位置也可相反。举例而言,冷却块180可被设定大小并被配置成置位于基板支撑件104的内径内,而辐射加热源106可耦接至顶部112。在这种配置中,石英窗部114可设于辐射加热源106与基板支撑件104之间,比如与腔室100的上部中的辐射加热源106相邻。虽然基板140在背侧面向辐射加热源106时可更容易地吸收热量,但在任一配置中,基板140也可以定向为面向上的方向或面向下的方向。
进口181A和出口181B可通过阀和适当的管路***而耦接至冷却剂源182,且冷却剂源182与控制器124通讯以促进对在冷却剂源182中设置的流体的压力和/或流量的控制。流体可为水、乙二醇、氮(N2)、氦(He)、或用作为热交换媒介的其他流体。
图2是根据一个实施方式的支撑构件200的截面图。支撑构件200可于设备100中用作为支撑环150。支撑构件200可为具有内径202与外径204的环形构件,且可具有第一侧部206与第二侧部208。
内径202具有凸出部210,凸出部210从实质由第一侧部206界定的平面凸出。凸出部210可用于接合于在第二支撑构件(未示)上的互补凸出部,比如图1中的边缘环152。这种接合的凸出部可用于使第二支撑构件相对于支撑构件200牢固地定位。
凸出部210可从第一侧部206凸出一距离,所述距离被选择以使第二支撑构件保持牢固地定位。凸出部210的长度也受控于可在特定实施方式中存在的空间限制。凸出部210的合适长度值可介于约0.01英寸与约0.1英寸之间,例如约0.04英寸。
外径204可具有第二凸出部212,第二凸出部212从第二侧部208凸出。凸出部212可用于接合于第三支撑构件(未示),比如图1的支撑圆筒154。凸出部212使支撑构件200相对于第三支撑构件牢固地定位。因此这两个凸出部210与212为三个支撑构件(包括支撑构件200)提供了牢固定位。
图2的第二凸出部212可位于比第三支撑构件更大或更小的半径处。因此,第二凸出部212可通过沿着第三支撑构件的外表面延伸而接合于第三支撑构件,或者可通过沿着第三支撑构件的内表面延伸而接合于第三支撑构件。外径204通常延伸超过第三支撑构件的半径,以便使支撑构件200置于第三支撑构件上。若第二凸出部212位于比第三支撑构件小的半径处,则外径204将延伸超过第二凸出部212的半径。在图2所示的实施方式中,第二凸出部212的半径与外径204实质上相同。
支撑构件200可在其第一侧部206与第二侧部208的至少一个上具有溶胶涂层。溶胶涂层是由溶胶形成的涂层。溶胶是一种在基质(比如液体载体)中分散的有大分子(例如具有纳米尺寸的分子)的材料。这些分子可为高分子(macromolecule)、聚合物、或是较小的分子的聚结体。基质通常是一种有助于对表面施加溶胶的材料,例如液体(比如润滑材料或凝胶材料)。在经干燥后,溶胶会产生溶胶涂层,此溶胶涂层依干燥与加热程度而具有变化的孔隙率(porosity)。
图3是具有溶胶涂层302的支撑构件300的截面图。支撑构件300可为被施加有溶胶涂层的支撑构件200。支撑构件300也可被用作为图1的支撑环150。
溶胶涂层302含有一种防止可被图1的温度传感器117检测到的辐射透过支撑构件300和/或由支撑构件300辐射的材料。这种辐射会降低温度传感器117对于设置在热处理腔室中的基板所发出的辐射的检测能力。在低温热处理中,基板发出的辐射减少,因此控制辐射噪声源改进温度检测。
图3的支撑构件300可具有硅氧化物主体304,硅氧化物主体304可为石英(比如泡沫石英或非晶石英)或二氧化硅(比如非晶二氧化硅)。温度传感器117可检测的辐射通常可透过硅氧化物主体,因此溶胶涂层302含有诸如硅之类的材料,从而会阻挡这种辐射的透射。这种材料可为具有过剩硅的二氧化硅,或者这种材料可为掺杂氧的硅。一般而言,会选择使温度传感器117可检测的入射辐射的低于约10m%透射的材料。这种材料通常被称为是对入射辐射不透明。
溶胶涂层302可为如图3中所示的层结构,或是单一层。层结构通常具有多于一层,这些层可为实质上相同成分或不同成分。一般而言,这些层中的至少一层将对可由温度传感器117检测的辐射(比如高温计辐射)实质上不透明。这些层的一层可为硅。这些层中的其他层可为二氧化硅、过剩硅的二氧化硅、掺杂硅、或其他含硅材料。
溶胶涂层302对硅氧化物主体304的粘接可通过使用溶胶粘接层而强化,溶胶粘接层可为二氧化硅或过剩硅的二氧化硅。粘接层可为溶胶层。硅溶胶层可形成于粘接层上,以增进硅溶胶层至支撑构件300的黏接。
溶胶涂层302的层结构的特征可在于具有渐变成分。在二氧化硅主体上可形成一系列层,每一层都具有不同成分。举例而言,溶胶涂层302中的每一层比下面紧邻的层可具有更多的硅。以此方式可形成任何数目的层,以提供从类二氧化硅成分(亦即,接近化学计量的二氧化硅)至实质硅层(若有氧的话,也仅具有极微量的氧)的成分渐变过程(progression)。以此方式,可提升溶胶涂层302的黏接性。
溶胶涂层302可具有介于约50纳米与约50微米之间的厚度,比如介于约100纳米与约10微米之间,例如约1微米。在多层溶胶涂层中,如图3所示,每一层可具有相同厚度,或者这些层可具有不同厚度。举例而言,层结构的粘接层可具有比辐射阻挡层更厚的厚度,以使涂层的粘接性达最大。举例而言,单一粘接层可具有约0.5微米的厚度,而辐射阻挡层仅具有约100纳米的厚度。在多层结构的一个实施方式中,每一层的厚度与其硅含量成反比,因此具有类似二氧化硅成分的第一溶胶层的厚度大于比第一溶胶层有更多硅的第二溶胶层的厚度,且持续如此直到多层结构的最后一层为止,此最后一层具有最小厚度,且实质上由硅组成。
溶胶涂层302可具有覆盖层308。覆盖层可以是与溶胶涂层302的剩余部分相容的耐久材料,例如二氧化硅。覆盖层可用于避免硅(或实质上为硅)辐射阻挡层暴露于硅反应性物种(比如氧或氮)。对于相对厚的硅层而言,在处理期间暴露于氧的表面可原位产生覆盖层,且几乎没有不利影响。然而,对于薄硅层而言,暴露于氧的表面可使硅层的辐射阻挡性质劣化,因此沉积的覆盖层在这类实施方式中可为有用的。
在溶胶层或溶胶涂层的任一层中都会含有空隙。因为溶胶一般包含分散于液体基质中的固体,当液体被移除时,即可于先前分隔固体颗粒的液体处留下空隙。这些空隙使所产生的干燥的溶胶材料产生孔隙率。在液体移除处理期间和之后的溶胶热处理会消除一些空隙,降低孔隙率,和/或使移除液体之后剩下的固体材料致密化。可在低于液体始沸点的温度下进行热处理,或者可在液体始沸点或高于液体始沸点的温度下进行热处理。使用液体始沸点或高于液体始沸点的温度会促进较大空隙的形成,因为在溶胶中有泡体形成。在以水作为液体基质的水***中,在100℃或高于100℃使混合物干燥可促进在溶胶内形成泡体,以产生较大空隙与更大的孔隙率。在一些实施方式中,尺寸介于约10纳米与约60微米之间(例如介于约100纳米与约10微米之间)的空隙可有利于降低穿过涂层的光透射。在经过干燥与热处理之后,溶胶层的孔隙率可为介于约35%与约80%之间,例如介于约45%与约60%之间。
在层状溶胶工艺中,重复沉积多层溶胶层以建构溶胶涂层,其中每一层的孔隙率都可被控制,以产生具有不同孔隙率的层。在一些实施方式中,孔隙率也可在涂层间渐变。举例而言,图3的溶胶涂层302在接近硅氧化物主体304处可具有第一孔隙率,而在接近溶胶涂层302的表面处具有与第一孔隙率不同的第二孔隙率。第二孔隙率可低于第一孔隙率,或者第二孔隙率可高于第一孔隙率。
通过以层状方式施加溶胶涂层,并周期性地或在所有层都沉积之后进行热处理和/或干燥,可调整整个溶胶涂层的孔隙率。在一个实施方式中,每一层都是在沉积之后分别地进行干燥。在另一实施方式中,每一层都是在沉积之后进行干燥与热处理。可在沉积了多层之后进行干燥,以使所述多层在同一时间进行干燥。可在沉积了多层之后进行干燥与热处理,以使所述多层在同一时间进行干燥和热处理。对不同层所施用的干燥与热处理可以不同,以于不同层中达到不同的孔隙率水平。以这个方式,可利用层状溶胶涂层来实现任何需要的孔隙率分布。此外,在同一时间进行多层的干燥和/或热处理可促进成分与孔隙率在各层间的扩散,以降低层之间的界面梯度。在一个实施方式中,沉积多个溶胶层,所述多个溶胶层经干燥与热处理,然后再沉积、干燥及热处理第二多个溶胶层。
在本文所述的溶胶涂层中可含有跟硅与氧一起的碳。碳化硅可用于阻挡可被温度传感器117检测的一些频率的辐射。如有需要,溶胶涂层可含有硅溶胶层和碳化硅溶胶层,以加宽由溶胶涂层阻挡的光谱。碳化硅溶胶层可沉积为与硅溶胶层相邻(上方或下方),且这两层可具有渐变界面。
溶胶涂层一般由溶胶涂覆工艺形成。一个实例为溶胶凝胶工艺。向硅氧化物主体涂覆溶胶凝胶,然后热处理将溶胶烧结成涂层。以这种工艺形成的溶胶涂层呈多孔状,且涂层的孔隙率可由用于烧结溶胶的热处理的程度予以控制。施用较多的热会产生较致密的涂层,反之亦然。孔隙率在一些涂层中可有利于降低穿过涂层的辐射透射。根据另一实施方式,通过对涂层表面施加高程度的热处理以致密化所述表面,可在溶胶涂层上形成覆盖层并在覆盖层下方留下多孔层。这种高程度的热处理可由火抛光(fire polishing)工艺、激光退火工艺、或等离子体暴露工艺进行。
二氧化硅可由溶胶工艺利用含有二氧化硅前驱物的成分制成。正硅酸乙酯(tetraethylorthosilicate,TEOS)是二氧化硅前驱物的一个实例,正硅酸乙酯可包含于有水的溶胶中以由溶胶工艺形成二氧化硅。TEOS形成二氧化硅凝胶聚合物,所述二氧化硅凝胶聚合物可经干燥而成为如上所述的具有孔隙率的二氧化硅基质。也可使用其他的烷氧化硅而通过溶胶工艺形成二氧化硅。可通过将小的硅颗粒分散于液体(比如酒精)中、将此分散物涂覆至基板、并且干燥所涂覆的分散物而沉积硅。硅颗粒作为溶胶中的硅前驱物,并且在经干燥后形成多孔硅层。可添加诸如脂肪酸(例如硬脂酸、油酸)之类的表面活性剂来稳定化硅胶体。在二氧化硅前驱物成分中的硅颗粒的混合物可用于沉积具有硅和二氧化硅的溶胶材料。也可使用脂肪酸来稳定化这种混合物。
具有不同成分层的层状结构可由依序的溶胶凝胶工艺、使用不同成分的溶胶而形成。第一成分的第一溶胶被涂覆至表面并经干燥以形成第一溶胶层。然后具有第二成分(与所述第一成分不同)的第二溶胶可被涂覆至所述表面并经干燥以于所述第一溶胶层上形成第二溶胶层。应注意在溶胶凝胶工艺中,通过在施加第二溶胶层之前部分干燥所述第一溶胶层,可形成渐变界面(亦即具有渐变成分的界面),所述渐变界面可以是过渡层。想到的是,在所述第二溶胶层被干燥时,所述第一溶胶层也会干燥,且在两层之间界面处的分子迁移通过界面,以于所述界面处产生渐变成分。
一般而言,溶胶涂层形成在支撑构件的非面向辐射侧上,但溶胶涂层可以形成在支撑构件的任何所需表面上,以阻挡辐射传输。实际上,溶胶涂层可被涂覆于辐射热处理腔室的任何所需表面上,比如图1的腔室。特别是,除了支撑构件154以外,还可对支撑圆筒154和/或边缘环152施加阻挡辐射的溶胶涂层。溶胶涂层,或溶胶涂层的每一单独层,可通过将溶胶材料流动涂布、喷涂、或旋涂至基板上而形成。如上所述,每一层可被单独地施加及干燥/热处理,或可于干燥处理或热处理之间施加多层。热处理可以与干燥处理相同的频率、或以不同频率来施用。通过调整液体含量与粘度、或溶胶材料的尺寸和颗粒含量,可控制溶胶材料的粘度。
如果需要,溶胶涂层可与气相沉积的涂层一起使用。可通过形成气相沉积层和溶胶层而于支撑构件200上形成涂层。举例而言,二氧化硅或富含硅的二氧化硅粘接层可通过气相沉积形成,然后硅溶胶层形成在气相沉积的二氧化硅或富含硅的二氧化硅粘接层上。如有需要,可在形成溶胶层之前,在硅氧化物主体之上形成多层气相沉积层。如有需要,覆盖层也可以是气相沉积的。在一些实施方式中,可通过施加多层气相沉积层和一或多层溶胶层而于支撑构件上形成涂层。所述一或多层溶胶层提供气相沉积层中一般无法实现的孔隙率。孔隙率增强涂层的辐射阻挡特性。
虽然前述内容针对本发明的实施方式,但可在未背离本发明的基本范围的情况下设计出本发明的其他与进一步的实施方式,本发明的范围由随附权利要求书决定。
Claims (14)
1.一种用于热处理腔室的支撑构件,包括:
主体,所述主体支撑被暴露于辐射的工件,所述主体包括硅氧化物且具有:
第一侧和第二侧;及
多孔涂层,所述多孔涂层包括:
硅层;和
第二层,所述第二层包括二氧化硅与硅且具有成分渐变过程,所述第二层设置在所述第一侧或所述第二侧上且位于所述硅层与所述第一侧或所述第二侧之间,所述成分渐变过程沿厚度方向具有从类二氧化硅成分至到达所述硅层的实质硅成分的渐变过程,所述多孔涂层具有介于50纳米与50微米之间的厚度。
2.如权利要求1所述的支撑构件,其中所述第二层包括具有不同成分的多层。
3.如权利要求1所述的支撑构件,其中所述多孔涂层进一步包括碳。
4.如权利要求1所述的支撑构件,进一步包括从所述第一侧凸出的第一凸出部和从所述第二侧凸出的第二凸出部。
5.一种用于热处理腔室的支撑构件,包括:
主体,所述主体支撑被暴露于辐射的工件,所述主体包括硅氧化物且具有:
第一侧和第二侧;及
多孔涂层,所述多孔涂层包括硅与二氧化硅,所述硅与二氧化硅在所述第一侧或所述第二侧上,其中所述多孔涂层沿厚度方向具有从类二氧化硅成分至实质硅成分的渐变过程且具有介于50纳米与50微米之间的厚度。
6.如权利要求5所述的支撑构件,其中所述多孔涂层包括具有不同成分的多层。
7.如权利要求6所述的支撑构件,其中所述多孔涂层包括包含所述硅的硅层且具有从类二氧化硅成分至所述硅层的成分渐变过程。
8.如权利要求7所述的支撑构件,其中所述多孔涂层具有沿厚度方向变化的孔隙率。
9.一种用于热处理腔室的支撑构件,包括:
主体,所述主体支撑被暴露于辐射的工件,所述主体包括硅氧化物且具有:
第一侧和第二侧;及
多孔涂层,所述多孔涂层包括硅与二氧化硅且沿厚度方向具有从类二氧化硅成分至硅成分的成分渐变过程,所述多孔涂层在所述第一侧或所述第二侧上,其中所述多孔涂层具有沿厚度方向变化的孔隙率和介于50纳米与50微米之间的厚度。
10.一种用于热处理腔室的支撑构件,包括:
含硅氧化物的主体,所述主体支撑被暴露于辐射的工件,所述主体包括:
第一侧和第二侧;及
异质层结构,所述异质层结构包括二氧化硅与硅且沿厚度方向具有从类二氧化硅成分至硅成分的成分渐变过程,所述异质层结构形成于所述第一侧或所述第二侧上,其中所述异质层结构具有介于50纳米与50微米之间的厚度,并且对入射于所述支撑构件上的具有高温计波长的辐射不透明。
11.如权利要求10所述的支撑构件,其中所述异质层结构具有介于35%与80%之间的孔隙率。
12.如权利要求10所述的支撑构件,其中所述异质层结构包括具有第一孔隙率的第一层和具有第二孔隙率的第二层,所述第二孔隙率与所述第一孔隙率不同。
13.如权利要求11所述的支撑构件,其中所述异质层结构具有尺寸介于10纳米与60微米之间的孔隙。
14.如权利要求10所述的支撑构件,其中所述异质层结构进一步包括辐射阻挡层和覆盖层。
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CN105684133A (zh) | 2016-06-15 |
US20200251375A1 (en) | 2020-08-06 |
KR20210100759A (ko) | 2021-08-17 |
CN105684133B (zh) | 2020-05-15 |
US20180211865A1 (en) | 2018-07-26 |
KR102377903B1 (ko) | 2022-03-23 |
CN111584396A (zh) | 2020-08-25 |
US9929037B2 (en) | 2018-03-27 |
US10672641B2 (en) | 2020-06-02 |
KR102289792B1 (ko) | 2021-08-17 |
US11646218B2 (en) | 2023-05-09 |
KR20160083079A (ko) | 2016-07-11 |
US20150123337A1 (en) | 2015-05-07 |
TW201527123A (zh) | 2015-07-16 |
CN107507799A (zh) | 2017-12-22 |
TWI649204B (zh) | 2019-02-01 |
CN111584396B (zh) | 2023-09-01 |
WO2015069456A1 (en) | 2015-05-14 |
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