CN107492507A - 金属配线、其的形成方法及包含其的半导体器件 - Google Patents
金属配线、其的形成方法及包含其的半导体器件 Download PDFInfo
- Publication number
- CN107492507A CN107492507A CN201710432718.1A CN201710432718A CN107492507A CN 107492507 A CN107492507 A CN 107492507A CN 201710432718 A CN201710432718 A CN 201710432718A CN 107492507 A CN107492507 A CN 107492507A
- Authority
- CN
- China
- Prior art keywords
- metal
- mentioned
- layer
- carbon source
- xenogenesis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 185
- 239000002184 metal Substances 0.000 title claims abstract description 185
- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 179
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 115
- 239000003054 catalyst Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000009826 distribution Methods 0.000 claims abstract description 73
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 60
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 58
- 239000010439 graphite Substances 0.000 claims abstract description 58
- 238000001704 evaporation Methods 0.000 claims abstract description 16
- -1 graphite carbon alkene Chemical class 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 230000008020 evaporation Effects 0.000 claims abstract description 14
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 24
- 239000003863 metallic catalyst Substances 0.000 claims description 19
- 150000001336 alkenes Chemical class 0.000 claims description 16
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 claims description 16
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 claims description 12
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 claims description 10
- YFIJJNAKSZUOLT-UHFFFAOYSA-N Anthanthrene Chemical compound C1=C(C2=C34)C=CC=C2C=CC3=CC2=CC=CC3=CC=C1C4=C32 YFIJJNAKSZUOLT-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- HXGDTGSAIMULJN-UHFFFAOYSA-N acetnaphthylene Natural products C1=CC(C=C2)=C3C2=CC=CC3=C1 HXGDTGSAIMULJN-UHFFFAOYSA-N 0.000 claims description 9
- 125000005605 benzo group Chemical group 0.000 claims description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 9
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 claims description 6
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 6
- 239000003205 fragrance Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- XYTKCJHHXQVFCK-UHFFFAOYSA-N 1,3,8-trimethylnaphthalene Chemical compound CC1=CC=CC2=CC(C)=CC(C)=C21 XYTKCJHHXQVFCK-UHFFFAOYSA-N 0.000 claims description 5
- DNDPLEAVNVOOQZ-UHFFFAOYSA-N 2,3,4,5,6-pentachloropyridine Chemical compound ClC1=NC(Cl)=C(Cl)C(Cl)=C1Cl DNDPLEAVNVOOQZ-UHFFFAOYSA-N 0.000 claims description 5
- AVPWUAFYDNQGNZ-UHFFFAOYSA-N 2,3,4,5-tetrabromothiophene Chemical compound BrC=1SC(Br)=C(Br)C=1Br AVPWUAFYDNQGNZ-UHFFFAOYSA-N 0.000 claims description 5
- RAASUWZPTOJQAY-UHFFFAOYSA-N Dibenz[a,c]anthracene Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C3=CC=CC=C3C2=C1 RAASUWZPTOJQAY-UHFFFAOYSA-N 0.000 claims description 5
- SLGBZMMZGDRARJ-UHFFFAOYSA-N Triphenylene Natural products C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 claims description 5
- FTOVXSOBNPWTSH-UHFFFAOYSA-N benzo[b]fluoranthene Chemical compound C12=CC=CC=C1C1=CC3=CC=CC=C3C3=C1C2=CC=C3 FTOVXSOBNPWTSH-UHFFFAOYSA-N 0.000 claims description 5
- 230000003197 catalytic effect Effects 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- KDEZIUOWTXJEJK-UHFFFAOYSA-N heptacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC7=CC=CC=C7C=C6C=C5C=C4C=C3C=C21 KDEZIUOWTXJEJK-UHFFFAOYSA-N 0.000 claims description 5
- QSQIGGCOCHABAP-UHFFFAOYSA-N hexacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C=C21 QSQIGGCOCHABAP-UHFFFAOYSA-N 0.000 claims description 5
- LSQODMMMSXHVCN-UHFFFAOYSA-N ovalene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3C5=C6C(C=C3)=CC=C3C6=C6C(C=C3)=C3)C4=C5C6=C2C3=C1 LSQODMMMSXHVCN-UHFFFAOYSA-N 0.000 claims description 5
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 5
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 5
- 229920002239 polyacrylonitrile Polymers 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- KTQYWNARBMKMCX-UHFFFAOYSA-N tetraphenylene Chemical group C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C3=CC=CC=C3C2=C1 KTQYWNARBMKMCX-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 125000005580 triphenylene group Chemical group 0.000 claims description 5
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 claims description 4
- 229910001369 Brass Inorganic materials 0.000 claims description 4
- 229910000906 Bronze Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 229910052770 Uranium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000010951 brass Chemical group 0.000 claims description 4
- 239000010974 bronze Chemical group 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical group [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910001220 stainless steel Chemical group 0.000 claims description 4
- 239000010935 stainless steel Chemical group 0.000 claims description 4
- 230000002194 synthesizing effect Effects 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- BKOOMYPCSUNDGP-UHFFFAOYSA-N 2-methylbut-2-ene Chemical group CC=C(C)C BKOOMYPCSUNDGP-UHFFFAOYSA-N 0.000 claims description 3
- 229920003026 Acene Polymers 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 241000272450 Cracidae Species 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021383 artificial graphite Inorganic materials 0.000 claims description 3
- 239000001273 butane Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 3
- 150000002220 fluorenes Chemical class 0.000 claims description 3
- 150000002430 hydrocarbons Chemical group 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical group [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 3
- 150000002825 nitriles Chemical class 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 3
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 150000001545 azulenes Chemical class 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- JQQSUOJIMKJQHS-UHFFFAOYSA-N pentaphene Chemical compound C1=CC=C2C=C3C4=CC5=CC=CC=C5C=C4C=CC3=CC2=C1 JQQSUOJIMKJQHS-UHFFFAOYSA-N 0.000 claims 1
- 229920006389 polyphenyl polymer Polymers 0.000 claims 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- CWRYPZZKDGJXCA-UHFFFAOYSA-N acenaphthene Chemical compound C1=CC(CC2)=C3C2=CC=CC3=C1 CWRYPZZKDGJXCA-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000001451 molecular beam epitaxy Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 125000004054 acenaphthylenyl group Chemical group C1(=CC2=CC=CC3=CC=CC1=C23)* 0.000 description 4
- CUFNKYGDVFVPHO-UHFFFAOYSA-N azulene Chemical compound C1=CC=CC2=CC=CC2=C1 CUFNKYGDVFVPHO-UHFFFAOYSA-N 0.000 description 4
- WDECIBYCCFPHNR-UHFFFAOYSA-N chrysene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 4
- GBROPGWFBFCKAG-UHFFFAOYSA-N picene Chemical compound C1=CC2=C3C=CC=CC3=CC=C2C2=C1C1=CC=CC=C1C=C2 GBROPGWFBFCKAG-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 3
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QLYMKVOSBFUVQJ-UHFFFAOYSA-N 11,23-diazahexacyclo[12.12.0.02,11.03,8.015,24.017,22]hexacosa-1(14),2,4,12,15,17,19,21,23,25-decaene-7,9,10-trione Chemical compound C1(N2C=CC3=C(C=CC=4N=C5C=CC=CC5=CC3=4)C2=C2C(C1=O)C(CC=C2)=O)=O QLYMKVOSBFUVQJ-UHFFFAOYSA-N 0.000 description 2
- YFCSASDLEBELEU-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene-11,12,15,16,17,18-hexacarbonitrile Chemical compound N#CC1=C(C#N)C(C#N)=C2C3=C(C#N)C(C#N)=NN=C3C3=NN=NN=C3C2=C1C#N YFCSASDLEBELEU-UHFFFAOYSA-N 0.000 description 2
- SSSYOIPHXANRMO-UHFFFAOYSA-N 4h-benzo[a]quinolizine Chemical class C1=CC=C2C3=CC=CCN3C=CC2=C1 SSSYOIPHXANRMO-UHFFFAOYSA-N 0.000 description 2
- KXRDGZKEHJKSMF-UHFFFAOYSA-N 6,6,9,9,10,10-hexamethyl-11,23-diazahexacyclo[12.12.0.02,11.03,8.015,24.017,22]hexacosa-1(14),2,4,7,12,15,17,19,21,23,25-undecaene Chemical compound CC1(C=CC=2C(C(C(N3C=CC4=C(C=CC=5N=C6C=CC=CC6=CC4=5)C=23)(C)C)(C)C)=C1)C KXRDGZKEHJKSMF-UHFFFAOYSA-N 0.000 description 2
- FMMWHPNWAFZXNH-UHFFFAOYSA-N Benz[a]pyrene Chemical compound C1=C2C3=CC=CC=C3C=C(C=C3)C2=C2C3=CC=CC2=C1 FMMWHPNWAFZXNH-UHFFFAOYSA-N 0.000 description 2
- HKMTVMBEALTRRR-UHFFFAOYSA-N Benzo[a]fluorene Chemical compound C1=CC=CC2=C3CC4=CC=CC=C4C3=CC=C21 HKMTVMBEALTRRR-UHFFFAOYSA-N 0.000 description 2
- GYFAGKUZYNFMBN-UHFFFAOYSA-N Benzo[ghi]perylene Chemical group C1=CC(C2=C34)=CC=C3C=CC=C4C3=CC=CC4=CC=C1C2=C43 GYFAGKUZYNFMBN-UHFFFAOYSA-N 0.000 description 2
- KHNYNFUTFKJLDD-UHFFFAOYSA-N Benzo[j]fluoranthene Chemical compound C1=CC(C=2C3=CC=CC=C3C=CC=22)=C3C2=CC=CC3=C1 KHNYNFUTFKJLDD-UHFFFAOYSA-N 0.000 description 2
- SKLCPEMSKRYVKF-UHFFFAOYSA-N C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1.C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1.C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 SKLCPEMSKRYVKF-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- XYOVOXDWRFGKEX-UHFFFAOYSA-N azepine Chemical compound N1C=CC=CC=C1 XYOVOXDWRFGKEX-UHFFFAOYSA-N 0.000 description 2
- TUAHORSUHVUKBD-UHFFFAOYSA-N benzo[c]phenanthrene Chemical compound C1=CC=CC2=C3C4=CC=CC=C4C=CC3=CC=C21 TUAHORSUHVUKBD-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- VXRUJZQPKRBJKH-UHFFFAOYSA-N corannulene Chemical compound C1=CC(C2=C34)=CC=C3C=CC3=C4C4=C2C1=CC=C4C=C3 VXRUJZQPKRBJKH-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- BKMIWBZIQAAZBD-UHFFFAOYSA-N diindenoperylene Chemical group C12=C3C4=CC=C2C2=CC=CC=C2C1=CC=C3C1=CC=C2C3=CC=CC=C3C3=CC=C4C1=C32 BKMIWBZIQAAZBD-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- TYPKKLUFDMGLAC-UHFFFAOYSA-N kekulene Chemical compound C1=C2C=CC3=CC4=CC=C(C=C5C(C6=CC7=C8C=C9C(C(C=CC9=CC8=CC=C7C=C6C=C5)=C5)=C6)=C7)C7=C4C=C3C2=CC2=C6C5=CC=C21 TYPKKLUFDMGLAC-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- QFPJPOONTXRLHG-UHFFFAOYSA-N olympicene Chemical compound C1=CC(CC=C2C=C3)=C4C2=C2C3=CC=CC2=CC4=C1 QFPJPOONTXRLHG-UHFFFAOYSA-N 0.000 description 2
- XDJOIMJURHQYDW-UHFFFAOYSA-N phenalene Chemical compound C1=CC(CC=C2)=C3C2=CC=CC3=C1 XDJOIMJURHQYDW-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- UXUXNGMSDNTZEC-UHFFFAOYSA-N zethrene Chemical compound C1=CC(C=2C(C=3C=CC=C4C=CC=C(C=2)C4=3)=C2)=C3C2=CC=CC3=C1 UXUXNGMSDNTZEC-UHFFFAOYSA-N 0.000 description 2
- 241000723353 Chrysanthemum Species 0.000 description 1
- 235000007516 Chrysanthemum Nutrition 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 239000004425 Makrolon Substances 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910004882 Na2S2O8 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 241000276425 Xiphophorus maculatus Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical group [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76847—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned within the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
Abstract
本发明涉及金属‑石墨烯异种接合金属配线、其的形成方法及包含其的半导体器件,其中包括:步骤A,通过在基板的上部面蒸镀碳源,来形成碳源层;步骤B,通过在上述碳源层上蒸镀金属催化剂,来形成金属催化剂层;以及步骤C,对包括上述碳源层及金属催化剂层的基板进行热处理,能够与层数无关地仅用1次热处理形成石墨烯,因此减少金属配线的制备时间及制备费用,并且不发生基于热处理的金属配线的损伤。
Description
技术领域
本发明涉及金属-石墨烯异种接合金属配线、在半导体器件形成金属-石墨烯异种接合金属配线的方法及包括金属-石墨烯异种接合金属配线的半导体器件。
背景技术
随着半导体器件的大小逐渐减小,正处于金属配线的宽度及间隔逐渐减小的趋势。用作半导体器件的金属配线的铜随着配线宽度减小电阻急剧增大,因此在适用于数-数十纳米的半导体器件中存在困难。
最近,全球对作为低电阻材料的碳类原材料应用于配线的方法进行着广泛的研究,在上述碳类原材料中将石墨烯应用于配线原材料的方法进行着广泛的研究。
上述石墨烯(graphene)作为由碳原子形成的二维导电性物质,既以蜂窝状的结构在化学上稳定,又以一维或二维的纳米大小的图案容易进行加工。并且,上述石墨烯热传导性高,且具有可使电子如无质量似的快速移动的优秀的导电性,从而作为可替代当前作为半导体器件的原材料使用得多的硅的新一代电子原材料受到瞩目。
并且,由于上述石墨烯具有由量子导电引起的弹道输运(ballistic transport)特性,因此预计可用作代替金属配线的超大规模集成电路(Very Large Scale IntegratedCircuit;VLSI)的低电阻配线。
为了将石墨烯用作半导体器件的金属配线,需要高品质的石墨烯。为此,以往将利用化学气相沉积法(Chemical Vapor Deposition;CVD)合成的大面积石墨烯转移于金属配线后,利用蚀刻工序进行图案化来制作金属-石墨烯异种接合金属配线。在上述情况下,存在如下问题:由石墨烯合成和转移工序导致制备费用高,工序时间长,在转移过程中产生非预期的石墨烯的损伤(撕裂或起皱)或产生转移媒介的残留物,从而对电子元件的性能产生负面影响。并且,在对石墨烯进行蚀刻的过程中受到物理性损伤或形成缺陷,降低石墨烯的电特性。并且,因为石墨烯形成二维的板状结构,所以难以适用于垂直的配线结构。
因此,为了解决这种问题,需要可利用一次石墨烯合成工序在垂直或水平的金属配线的前部面涂敷石墨烯,来制备金属-石墨烯异种接合金属配线的技术。
发明内容
本发明要解决的技术问题
本发明的目的在于,提供在半导体器件形成金属-石墨烯异种接合金属配线的方法。
并且,本发明的再一目的在于,提供金属-石墨烯异种接合金属配线。
并且,本发明的另一目的在于,提供根据上述方法形成的金属-石墨烯异种接合金属配线的半导体器件。
技术方案
用于实现上述目的的本发明的在半导体器件形成金属-石墨烯异种接合金属配线的方法可包括:步骤A,通过在基板的上部面蒸镀碳源,来形成碳源层;步骤B,通过在上述碳源层上蒸镀金属催化剂,来形成金属催化剂层;以及步骤C,对包括上述碳源层及金属催化剂层的基板进行热处理,来将与上述金属催化剂层相接触的碳源层合成为石墨烯层。
在上述步骤C之后,还包括去除在不形成金属配线的位置的上述基板的上部面形成的石墨烯层及金属催化剂层进行去除的步骤。
在上述步骤B与步骤C之间还可包括步骤B`,上述步骤B`为在露出的上述金属催化剂层的露出面蒸镀碳源的步骤,在进行步骤B`的情况下,还可包括如下步骤:在上述步骤B`之前,去除在不形成金属配线的位置的上述基板的上部面形成的石墨烯层及金属催化剂层,在上述热处理步骤之后,对未合成为上述石墨烯的碳源层进行去除的步骤。
以交替的方式反复进行上述步骤A及上述步骤B,可通过在进行到上述步骤B的基板上层叠另一基板来反复进行。在这种情况下,在上述步骤B之后,去除不形成金属配线的位置的上述基板的上部面形成的碳源层及金属催化剂层之后,可通过层叠另一基板来反复过程,在上述步骤B与步骤C之间还包括步骤B`,在露出有上述金属催化剂层的露出面蒸镀碳源。
上述基板可以为形成有用于形成配线的沟道(trench)的基板,上述碳源层可位于上述配线沟道的内侧,上述金属催化剂层可以为通过蒸镀于形成在上述配线沟道的内侧的碳源层上来在上述配线沟道填满有金属催化剂的层。
上述碳源可以为选自由天然石墨、合成石墨、高定向热解石墨(Highly OrderedPyrolytic Graphite;HOPG)、活性炭(activated graphite)、一氧化碳、二氧化碳、甲烷、乙烷、乙烯、甲醇、乙醇、乙炔、丙烷、丙烯、丁烷、丁二烯、戊烷、戊烯、环戊二烯、己烷、环己烷、苯、吡啶、甲苯、聚甲基丙烯酸甲酯(Polymethyl Methacrylate;PMMA)、聚苯乙烯(Polystyrene)、聚丙烯腈(Polyacrylonitrile,PAN)、PEDOT:PSS、具有多芳烴(PAH)結構的分子、甲基萘(methylnaphthalene)、六溴苯(hexabromobenzene)、萘(naphthalene)、三联苯(terphenyl)、五氯吡啶(pentachloropyridine)、四溴噻吩(tetrabromothiophene)、苯并芘喃(benzopyrene)、甘菊环(azulene)、三甲基萘(trimethylnaphthalene)、威杀灵(acenaphthene)、苊烯(acenaphthylene)、蒽(anthracene)、芴(fluorene)、非那烯(phenalene)、菲(phenanthrene)、苯并(a)蒽(benz(a)anthracene)、苯并(a)菲(benzo(a)fluorene)、苯并(c)菲(benzo(c)phenanthrene)、(chrysene)、荧蒽(fluoranthene)、嵌二萘(pyrene)、并四苯(tetracene)、三亚苯(triphenylene)、苯并(e)荧蒽(benz(e)acephenanthrylene)、苯并荧蒽(benzofluoranthene)、二苯并蒽(dibenzanthracene)、奥林匹克烯(olympicene)、并五苯(pentacene)、二萘嵌苯(perylene)、苉(picene)、亚四苯基(tetraphenylene)、Z型并苯(zethrene)、卵苯(ovalene)、凯库勒烯(kekulene)、并六苯(hexacene)、并七苯(heptacene)、二茚并苝(diindenoperylene)、二蒄(dicoronylene)、晕苯(coronene)、碗烯(corannulene)、苯并(G,H,I)苝(benzo(ghi)perylene)、蒽嵌蒽(anthanthrene)、六甲基-二氢-4H-苯并喹嗪吖啶(hexamethyl-dihydro-4H-benzoquinolizinoacridine)、4H-苯并喹嗪吖啶三酮(4H-benzoquinolizinoacridinetrione)、六氮杂苯并菲-六腈(hexaazatriphenylene-hexacarbonitrile)组成的组中的一种以上。
上述金属催化剂可以为选自由铜(Cu)、镍(Ni)、铁(Fe)、铂(Pt)、铝(Al)、钴(Co)、钌(Ru)、钯(Pd)、铬(Cr)、锰(Mn)、金(Au)、银(Ag)、钼(Mo)、铑(Rh)、钽(Ta)、钛(Ti)、钨(W)、铀(U)、钒(V)、锆(Zr)、铱(Ir)、黄铜(brass)、青铜(bronze)及不锈钢(stainless steel)组成的组中的一种以上。
上述热处理可在25℃至400℃温度条件下进行。
为了进行上述热处理所供给的热源可从选自由微波(microwave)、紫外线(ultraviolet)、等离子体(plasma)、激光(laser)及加热器(heater)组成的组中的一种以上取得。
在对形成于上述基板的上部面的层进行去除的步骤中,可利用选自由抛光、蒸发法、湿蚀刻及干蚀刻组成的组中的一种以上进行。
并且,用于实现上述的其他目的的本发明的金属-石墨烯异种接合金属配线可包括:金属催化剂层;以及石墨烯,位于与金属催化剂层及上述金属催化剂层的除了一面的全部面或上述金属催化剂层的全部面相接的位置。
并且,用于实现上述的另一目的的本发明的含有金属-石墨烯异种接合金属配线的半导体器件可包括:基板,形成有配线沟道;金属催化剂层,填满于上述基板的上述沟道;以及石墨烯,位于与上述金属催化剂层的除了一面的全部面或上述金属催化剂层的全部面相接的位置。不具有上述石墨烯的金属催化剂层的一面为金属催化剂层不位于配线沟道侧且为被露出的面。
形成有上述金属-石墨烯异种接合金属配线的基板可由多层层叠而成。
有益效果
作为本发明的金属-石墨烯异种接合金属配线,不仅可制备水平的配线,而且还可制备垂直的配线,可与半导体层数无关地仅利用1次热处理,来形成石墨烯,因此减少金属配线的制备时间及制备费用,并且不发生基于热处理金属配线的损伤。
并且,由于在金属配线的全部面蒸镀有导电性优秀的石墨烯,因而电特性得到提高。
并且,以往额外地使用TiN等来用作金属催化剂防扩散膜,但是在本发明中,在未使用额外的物质的情况下,石墨烯本身不仅起到金属催化剂扩散阻挡层的作用,还起到防氧化膜的作用,因而配线的安全性得到提高。
附图说明
图1为示出根据本发明的一实施例在基板形成金属-石墨烯异种接合金属配线的方法的示意图。
图2为示出根据本发明的再一实施例在基板形成金属-石墨烯异种接合金属配线的方法的示意图。
图3为示出根据本发明的另一实施例在多层基板形成金属-石墨烯异种接合金属配线的方法的示意图。
附图标记的说明
10、10a、10b:基板 20、20a、20b:碳源层
30、30a、30b:金属催化剂层 40、40a、40b:石墨烯层
具体实施方式
本发明涉及石墨烯位于金属催化剂层的除了一面的全部面或金属催化剂层的全部面的金属-石墨烯异种接合金属配线、在半导体器件形成上述金属-石墨烯异种接合金属配线的方法及包含其的半导体器件。
以往,为了制备异种接合金属配线利用了如下方法:方法i,利用化学气相沉积合成石墨烯后,转移于半导体金属催化剂配线上或方法ii,在金属催化剂配线上直接合成石墨烯。
但是,作为上述方法i,在上述转移工序中,石墨烯的品质降低,需要均进行合成和转移,因此工序成本增加,并且不能适用于垂直的配线结构。并且,在上述方法ii中,为了适用于多层半导体器件需要反复石墨烯合成工序,因此不仅工序成本上升,而且由反复的热处理发生半导体原件的损伤。
不同与此,作为本发明的金属-石墨烯异种接合金属配线不仅可制备水平的配线,而且还可制备垂直的配线,与层数无关地仅利用1次热处理,来形成石墨烯,因此减少金属配线的制备时间及制备费用,并且不发生基于热处理金属配线的损伤。
并且,使石墨烯位于上述金属催化剂的除了一面的全部面的本发明的金属-石墨烯异种接合金属配线还用作防扩散膜,而且使石墨烯位于金属催化剂的全部面的本发明的金属-石墨烯异种接合金属配线还可用作防扩散膜及防氧化膜。
以下,对本发明进行详细说明。
本发明的形成金属-石墨烯异种接合金属配线的方法包括:步骤A,通过在基板的上部面蒸镀碳源,来形成碳源层;步骤B,通过在上述碳源层上蒸镀金属催化剂,来形成金属催化剂层;以及步骤C,对包括上述碳源层及金属催化剂层的基板进行热处理,来将与上述金属催化剂层相接触的碳源层合成为石墨烯层。
首先,在上述步骤A中通过在作为绝缘体的基板的上部面蒸镀碳源来形成碳源层。
若上述基板既是绝缘体又可容易蒸镀上述碳源,就不受特别限制,可蒸镀所需要的层数来使用。
并且,上述基板可以为形成有进行图案化的沟道的基板或未形成有沟道的基板,优选地,使用形成有配线沟道的基板。作为上述配线沟道的截面形状可例举“∪”、“∨”、等,但是并不限定于此,并且配线沟道可以为与深度相比宽度更宽的沟道(水平配线沟道)或与宽度相比深度更深的沟道(垂直配线沟道)。
并且,作为上述基板可适用于半导体配线工序的基板,具体地,可例举氧化物基板,如SiO2基板、氧化铟锡(ITO)基板、SnO2基板、TiO2基板、Al2O3基板等;金属基板,选自由Cu、Ni、Fe、Pt、Al、Co、Ru、Pd、Cr、Mn、Au、Ag、Mo、Rh、Ta、Ti、W、U、V、Zr、Ir及它们的组合物组成的组中;柔性基板,如聚对苯二甲酸乙二醇酯(Polyethylene Terephthalate;PET)、聚醚砜(Polyethylene Sulfone;PES)、聚甲基丙烯酸甲酯(Polymethyl Methacrylate;PMMA)、聚酰亚胺(Polyimide)、聚萘二甲酸乙二醇酯(Polyehylene Naphthalate;PEN)、聚碳酸酯(Polycarbonate;PC)等;或玻璃基板等。
上述碳源通过蒸镀于上述基板的上部面,来不仅可蒸镀于上述配线沟道的内侧面,而且还可蒸镀于未形成沟道的面,根据需要还可去除蒸镀于不是上述沟道的面的碳源。
并且,上述碳源作为通过位于金属催化剂层的除了一面的全部面或金属催化剂层的全部面并通过以25℃至400℃温度仅进行1次热处理来合成为石墨烯的物质,可例举选自由天然石墨、合成石墨、高定向热解石墨、活性炭、一氧化碳、二氧化碳、甲烷、乙烷、乙烯、甲醇、乙醇、乙炔、丙烷、丙烯、丁烷、丁二烯、戊烷、戊烯、环戊二烯、己烷、环己烷、苯、吡啶、甲苯、聚甲基丙烯酸甲酯(Polymethyl Methacrylate;PMMA)、聚苯乙烯、聚丙烯腈、PEDOT:PSS、具有多芳烴(PAH)結構的分子、甲基萘(methylnaphthalene)、六溴苯(hexabromobenzene)、萘(naphthalene)、三联苯(terphenyl)、五氯吡啶(pentachloropyridine)、四溴噻吩(tetrabromothiophene)、苯并芘喃(benzopyrene)、甘菊环(azulene)、三甲基萘(trimethylnaphthalene)、威杀灵(acenaphthene)、苊烯(acenaphthylene)、蒽(anthracene)、芴(fluorene)、非那烯(phenalene)、菲(phenanthrene)、苯并(a)蒽(benz(a)anthracene)、苯并(a)菲(benzo(a)fluorene)、苯并(c)菲(benzo(c)phenanthrene)、(chrysene)、荧蒽(fluoranthene)、嵌二萘(pyrene)、并四苯(tetracene)、三亚苯(triphenylene)、苯并(e)荧蒽(benz(e)acephenanthrylene)、苯并荧蒽(benzofluoranthene)、二苯并蒽(dibenzanthracene)、奥林匹克烯(olympicene)、并五苯(pentacene)、二萘嵌苯(perylene)、苉(picene)、亚四苯基(tetraphenylene)、Z型并苯(zethrene)、卵苯(ovalene)、凯库勒烯(kekulene)、并六苯(hexacene)、并七苯(heptacene)、二茚并苝(diindenoperylene)、二蒄(dicoronylene)、晕苯(coronene)、碗烯(corannulene)、苯并(G,H,I)苝(benzo(ghi)perylene)、蒽嵌蒽(anthanthrene)、六甲基-二氢-4H-苯并喹嗪吖啶(hexamethyl-dihydro-4H-benzoquinolizinoacridine)、4H-苯并喹嗪吖啶三酮(4H-benzoquinolizinoacridinetrione)、六氮杂苯并菲-六腈(hexaazatriphenylene-hexacarbonitrile)组成的组中的一种以上。在作为上述碳源在超过400℃的温度下使用利用石墨烯合成的物质的情况下,可对金属配线和半导体器件产生损伤,并可降低电特性及配线的稳定性。
不具有上述碳源的金属催化剂层的一面是指不位于配线沟道侧并露出的面。
作为蒸镀上述碳源的方法,只要是碳源蒸镀于上述基板的上部面的方法,就不受特别限制,优选地,可例举化学气相沉积法(Chemical Vapor Deposition;CVD)、物理气相沉积法(Physical Vapor Deposition;PVD)、原子层沉积法(Atomic Layer Deposition;ALD)或溶液工序(solution process)。作为蒸镀上述碳源的方法可实现以大面积形成均匀的碳源薄膜,能够以纳米单位精密地控制碳源薄膜的厚度,因此可精准地控制石墨烯的层数。
例如,上述化学气相沉积方法可以是通过热化学气相沉积(Thermal ChemicalVapor Deposition;TCVD)、快速热化学气相沉积(Rapid Thermal Chemical VaporDeposition;RTCVD)、电感耦合等离子体化学气相沉积(Inductively Coupled PlasmaChemical Vapor Deposition;ICP-CVD)、低压化学气相沉积(Low Pressure ChemicalVapor Deposition;LPCVD)、常压化学气相沉积(Atmospheric Pressure Chemical VaporDeposition;APCVD)、金属有机化学气相沉积(Metal Organic Chemical VaporDeposition;MOCVD)及等离子体增强化学气相沉积法(Plasma-Enhanced Chemical VaporDeposition;PECVD)方法形成的,但并不局限于此。
上述物理气象沉积方法可以是通过溅射(Sputtering)、电子束蒸发(ElectronBeam Evaporation)、热蒸镀(Thermal Evaporation)、分子束外延(Molecular BeamEpitaxy;MBE)、激光分子束外延(Laser Molecular Beam Epitaxy;L-MBE)及脉冲激光沉积(Pulse Laser Deposition;PLD)方法形成的,但并不局限于此。
利用上述溶液工序的方法可以是通过旋转涂敷(Spin Coating)、喷射涂敷(SprayCoating)、刮片(Doctor Blade)、浸渍涂布(Dip Coating)、棒涂敷(Bar Coating)、喷墨印刷方法形成的,但并不局限于此。
然后,在上述步骤B中,通过在上述碳源层上蒸镀金属催化剂,来形成金属催化剂层。
具体地,通过在蒸镀于上述配线沟道的上部面的碳源层上以达到上述配线沟道的高度的方式填满金属催化剂,来形成金属催化剂层。能够以低于配线沟道的高度方式填充上述金属催化剂,但是在上述情况下,不仅降低电特性,而且当层叠另一基板时,在与另一基板的下部面之间产生空间,因此还可降低金属配线的稳定性。
作为像这样形成的金属催化剂层,在位于上述配线沟道的内部的金属催化剂层的三面的表面具有碳源,但是一面处于向外部露出的状态。对此,在后述的图1中进行具体说明。
在上述金属催化剂层的一部分向外部露出的情况下,可通过进行步骤B`来在上述金属催化剂层的露出的面蒸镀碳源层,使得碳源层位于金属催化剂层的全部面。对此,在后述的图2中进行具体说明。
上述金属催化剂进行用于合成石墨烯的催化剂作用,可使用容易吸附碳的金属。上述金属催化剂层作为仅由金属形成的层,可例举选自由铜、镍、铁、铂、铝、钴、钌、钯、铬、锰、金、银、钼、铑、钽、钛、钨、铀、钒、锆、铱、黄铜、青铜及不锈钢组成的组中的一种以上。
并且,上述金属催化剂层可以是通过原子层沉积(Atomic Layer Deposition;ALD)、溅射、热蒸镀、电子束蒸发、分子束外延、激光分子束外延、脉冲激光沉积、化学气相沉积、溶胶凝胶法(Sol-gel)或电镀(Electro-plating)方法形成,但并不局限于此。
上述金属催化剂层被注入于进行图案化的配线沟道,来将金属催化剂本身可用作配线。
在本发明中以交替的方式反复进行上述步骤A及上述步骤B,可通过在进行到上述步骤B的基板上层叠另一基板来反复进行步骤A及上述步骤B,从而异种接合金属配线垂直地相连接,因此可获取垂直的金属配线。对此,在后述的图3中进行具体说明。
然后,在上述步骤C中,对包括上述碳源层及金属催化剂层的基板进行热处理,来将上述碳源层合成为石墨烯层。
作为上述热处理温度在低温条件下进行,优选地,在25℃至400℃温度下进行,在上述温度范围下使用被合成为石墨烯的碳源,来利用低温的热处理工序将上述碳源层合成为石墨烯层。在400℃以上的高温条件下合成石墨烯的情况下,产生金属配线及半导体器件的损伤,因此在低温条件下进行石墨烯的合成。
作为为了进行上述热处理所供给的热源可使用选自由微波、紫外线、等离子体、激光及加热器组成的组中的一种以上。
上述微波作为频率为约300MHz至30000MHz的电磁波,若向上述金属催化剂层-碳源层直接或间接照射上述微波,则包含于述金属催化剂层-碳源层的碳源层吸收上述微波,并可加热上述碳源层。例如,上述微波可照射1分钟至10分钟。
上述紫外线作为对由波长为约200nm至400nm的广域的电磁波的总称,与上述微波相同,可随着上述碳源层吸收紫外线,上述碳源层被进行热处理。
上述等离子体(plasma)是指气体(gas)充分地进行离子化的状态,具体地,向气体施加充分的能量,来随着温度增加分解为作为物质的基本结构要素的原子,温度变得更高,并原子丢失电子而成为阳离子,从而周围的物质可以为由阳离子和自由电子形成的物质状态。上述等离子体具有使电流流通通畅的自由电子,可通过利用上述等离子体的装置,利用上述等离子体来作为热源,来使上述碳源层得到热处理。
上述加热器(heater)为当供电时,可转换为热能的装置,可直接向与上述加热器相接触的物质加热,由此可对上述碳源层进行热处理。
如上所述,将选自微波、紫外线、等离子体、激光及加热器中的一种用作热源,通过借助在400℃以下的温度下对上述金属催化剂层-碳源层进行热处理,来使上述金属催化剂层被激活,从而可促进所供给的上述碳源的分解反应。由此,蒸镀于上述金属催化剂层上的上述碳源层可合成为石墨烯层。
在上述步骤A至步骤C之间,根据需要还可包括对形成于除了配线沟道的基板的另一上部面的碳源层和/或金属催化剂层进行去除的步骤,为了所制备的半导体器件的稳定性及优秀的品质,优选地,对形成于除了配线沟道的基板的另一上部面的碳源层和/或金属催化剂层进行去除。
具体地,在上述步骤C后,可对形成于除了配线沟道的上部面的基板的另一上部面的碳源层及金属催化剂层进行去除;在追加步骤B`的情况下,在上述步骤B`之前,对形成于除了配线沟道的上部面的上述基板的另一上部面的碳源层及金属催化剂层进行去除,在上述步骤C后,可对形成于基板的上部面的碳源层进行去除,在上述步骤A及上述步骤B以交替的方式反复层叠的情况下,在步骤B后,可对形成于除了配线沟道的上部面的基板的另一上部面的碳源层及金属催化剂层进行去除。
作为对形成于上述基板的上部面的层进行去除的方法,可利用选自由抛光、蒸发法、湿蚀刻及干蚀刻组成的组中的一种以上进行,优选地,是抛光(polishing)方法。
作为上述抛光方法将研磨剂固定于由柔和的布料制成的抛光件来进行高速旋转,从而选对碳源层和/或金属催化剂层进行择性地去除。
并且,作为上述蒸发在真空条件下,通过热处理过程,来对上述碳源层和/或金属催化剂层进行选择性地蒸发来进行。
并且湿蚀刻为利用选自由酸(acid)、氟化氢(HF)、氯化铁(FeCl3)、硝酸铁(Fe(NO3)3)、氯化铜(CuCl2)、过硫酸铵((NH4)2S2O8)、过硫酸钠(Na2S2O8)及缓冲氧化蚀刻剂(buffered oxide etchant,BOE)组成的组中的一种以上的蚀刻溶液,来对上述碳源层和/或金属催化剂层进行选择性去除。
并且,干蚀刻作为利用气体等离子体或基于激活的气体的反应,来对上述碳源层和/或金属催化剂层进行选择性去除的蚀刻,使用选自由溅射蚀刻、反应离子(reactiveion etching,RIE)及气相蚀刻(vapor phase etching)组成的组中的一种。
去除上述碳源层和/或金属催化剂层后,还可进行利用蒸馏水(去离子水(DIwater))对上述残留物质进行清洗的工序。在上述清洗工序中可使用异丙醇、硝酸蚀刻剂、过氧化氢蚀刻液、铬酸盐类蚀刻液、过氧单磺酸钾类蚀刻液、铁素体蚀刻液等的有机溶液或去离子水,但并不限定于此。
并且,本发明提供含有金属-石墨烯异种接合金属配线的半导体器件。
本发明的半导体器件包括:基板,形成有配线沟道;金属催化剂层,填满于上述基板的上述沟道;以及石墨烯,位于与上述金属催化剂层的除了一面的全部面或上述金属催化剂层的全部面相接的位置。例如,在上述配线沟道的内侧与金属催化剂层之间具有石墨烯的情况下(仅在三面具有石墨烯)进行防止金属催化剂向基板扩散的扩散防止膜的作用,在金属催化剂的全部面具有石墨烯的情况下,不仅进行防扩散膜的作用,还进行用于防止金属催化剂的氧化的防氧化膜的作用。
并且,层叠多个形成有上述金属-石墨烯异种接合金属配线的基板,优选地,层叠成1层至50层,因此通过上述金属配线相连接,来还可获取垂直的金属配线。
可通过附图对本发明的金属-石墨烯异种接合金属配线的形成方法进行具体说明,但并不限定于此。
图1为示出根据本发明的实施例在基板形成金属-石墨烯异种接合金属配线的方法的示意图。
如图1所示,通过在形成有配线沟道的基板10的上部面蒸镀碳源20,来形成碳源层(步骤A)后;在蒸镀于上述配线沟道的内部的碳源层上填满金属催化剂层30(步骤B),然后,为了使与金属催化剂层相接的碳源层合成为石墨烯40,进行热处理(步骤C)。进行上述热处理后,若对形成于不是配线沟道的部位的石墨烯层及金属催化剂层进行去除,则可形成可作为扩散防止膜进行作用的形成有金属-石墨烯异种接合金属配线的半导体器件。
如图1所示,仅在上述基板与金属催化剂层之间形成有石墨烯的情况下,可作为防扩散膜进行作用。但是,使金属催化剂层的一部分面露出,因此难以进行作为防氧化膜的作用。
并且,图2为示出根据本发明的再一实施例在基板形成金属-石墨烯异种接合金属配线的方法的示意图。
如图2所示,通过在形成有配线沟道的基板10的上部面蒸镀碳源20,来形成碳源层(步骤A)后,在蒸镀于上述配线沟道的内部的碳源层上填满金属催化剂层30(步骤B),然后,为了使与金属催化剂层相接的碳源层合成为石墨烯40,进行热处理(步骤C)。进行上述热处理后,对不位于与上述金属催化剂层相接的部位,来未合成为石墨烯而直接留下的碳源进行去除。像这样制备,从而可形成有上述金属催化剂层的全部面由石墨烯包围的金属-石墨烯异种接合金属配线的半导体器件。
如图2所示,在上述基板与金属催化剂层之间形成石墨烯,并还在露出的金属催化剂层的面形成有石墨烯的情况下,不仅可进行作为防扩散膜的作用,而且还可进行作为防氧化膜的作用。
并且,图3作为示出根据本发明的另一实施例在多层基板形成金属-石墨烯异种接合金属配线的方法的示意,是由上述步骤A及上述步骤B以交替的方式反复层叠而成的示意图。
如图3所示,通过在形成有配线沟道的基板10的上部面蒸镀碳源20,来形成碳源层(步骤A)后,在蒸镀于上述配线沟道的内部的碳源层上填满金属催化剂层30(步骤B),然后,对形成于不是配线沟道的部位的碳源层及金属催化剂层进行去除,然后,在形成有上述金属催化剂层30-碳源层20的基板的上部面层叠第二基板10a,然后对基板进行蚀刻,使得形成有上述金属催化剂层30-碳源层20的面露出。通过在经蚀刻的上述第二基板10a的上部面蒸镀第二碳源20a,来形成第二碳源层(步骤A1)后,在蒸镀于上述配线沟道的内部的第二碳源层上填满第二金属催化剂层30a(步骤B1),然后在通过对形成于不是配线沟道的部位的第二碳源层及第二金属催化剂层进行去除来露出的、填满于配线沟道的第二金属催化剂层的露出面蒸镀第二碳源20a(步骤B`),然后对形成于不是配线沟道的部位的第二碳源层进行去除。像这样,形成有上述第二金属催化剂层30a-第二碳源层20a的第二基板10a的上面层叠第三基板10b,然后,对基板进行蚀刻,使得形成有上述第二金属催化剂层30a-第二碳源层20a的面的一部分露出,然后,通过在经蚀刻的上述第三基板10b的上部面蒸镀第三碳源20b,来形成第三碳源层(步骤A2),然后在蒸镀于上述配线沟道的内部的第三碳源层上填满第三金属催化剂层30b(步骤B2),然后,在通过对形成于不是配线沟道的部位的第三碳源层及第三金属催化剂层来露出的、填满于配线沟道的第三金属催化剂层的露出面蒸镀第三碳源20b(步骤B1`),然后,为了使与金属催化剂层相接的碳源层合成为石墨烯40、40a、40b,进行热处理(步骤C)。
如图2所示,并不限定垂直层叠的基板的数量,在各个基板形成金属催化剂层-碳源层后,利用最终工序进行热处理,从而借助仅1次热处理形成金属-石墨烯异种接合金属配线。
以上,对本发明的特定部分进行了详细说明,就本发明所属技术领域的普通技术人员来说,这种详细说明只属于优选实施方式,本发明的范围并不局限于此。在本发明的范围及技术思想范围内可进行多种变更及修改,这对本发明所属技术领域的普通技术人员来说是显而易见的,当然这种变形及修改属于附加的发明要求保护范围。
Claims (17)
1.一种金属-石墨烯异种接合金属配线的形成方法,其特征在于,包括:
步骤A,通过在基板的上部面蒸镀碳源,来形成碳源层;
步骤B,通过在上述碳源层上蒸镀金属催化剂,来形成金属催化剂层;以及
步骤C,对包括上述碳源层及金属催化剂层的基板进行热处理,来将与上述金属催化剂层相接触的碳源层合成为石墨烯层。
2.根据权利要求1所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,上述基板为形成有配线沟道的基板,上述碳源层形成于上述配线沟道的内侧,上述金属催化剂层为通过蒸镀于形成在上述配线沟道的内侧的碳源层上来在上述配线沟道填满有金属催化剂的层。
3.根据权利要求1所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,在上述步骤C之后,还包括去除在不形成金属配线的位置的上述基板的上部面形成的石墨烯层及金属催化剂层的步骤。
4.根据权利要求1所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,在上述步骤B与步骤C之间还包括步骤B`,上述步骤B`为在露出的上述金属催化剂层的露出面蒸镀碳源的步骤。
5.根据权利要求4所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,还包括如下步骤:在上述步骤B`之前,去除在不形成金属配线的位置的上述基板的上部面形成的石墨烯层及金属催化剂层,在上述步骤C之后,对未合成为上述石墨烯的碳源层进行去除。
6.根据权利要求1所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,以交替的方式反复进行上述步骤A及上述步骤B,通过在进行到上述步骤B的基板上层叠另一基板来反复进行。
7.根据权利要求6所述的金属-石墨烯异种接合金属配线的形成方法,在上述步骤B之后,去除不形成金属配线的位置的上述基板的上部面形成的碳源层及金属催化剂层之后,通过层叠另一基板来反复进行。
8.根据权利要求6所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,在上述步骤B与步骤C之间还包括步骤B`,上述步骤B`为在露出的上述金属催化剂层的面蒸镀碳源层的步骤。
9.根据权利要求1所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,上述基板为形成有配线沟道的基板,上述碳源层形成于上述配线沟道的内侧,上述金属催化剂层为通过蒸镀于形成在上述配线沟道的内侧的碳源层上来在上述配线沟道填满有金属催化剂的层。
10.根据权利要求1所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,上述碳源为选自由天然石墨、合成石墨、高定向热解石墨、活性炭、一氧化碳、二氧化碳、甲烷、乙烷、乙烯、甲醇、乙醇、乙炔、丙烷、丙烯、丁烷、丁二烯、戊烷、戊烯、环戊二烯、己烷、环己烷、苯、吡啶、甲苯、聚甲基丙烯酸甲酯、聚苯乙烯、聚丙烯腈、聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸、具有多芳烴結構的分子、甲基萘、六溴苯、萘、三联苯、五氯吡啶、四溴噻吩、苯并芘喃、甘菊环、三甲基萘、威杀灵、苊烯、蒽、芴、非那烯、菲、苯并(a)蒽、苯并(a)菲、苯并(c)菲、荧蒽、嵌二萘、并四苯、三亚苯、苯并(e)荧蒽、苯并荧蒽、二苯并蒽、奥林匹克烯、并五苯、二萘嵌苯、苉、亚四苯基、Z型并苯、卵苯、凯库勒烯、并六苯、并七苯、二茚并苝、二蒄、晕苯、碗烯、苯并苝、蒽嵌蒽、六甲基-二氢-4H-苯并喹嗪吖啶、4H-苯并喹嗪吖啶三酮及六氮杂苯并菲-六腈组成的组中的一种以上。
11.根据权利要求1所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,上述金属催化剂为选自由铜、镍、铁、铂、铝、钴、钌、钯、铬、锰、金、银、钼、铑、钽、钛、钨、铀、钒、锆、铱、黄铜、青铜及不锈钢组成的组中的一种以上。
12.根据权利要求1所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,上述热处理在25℃至400℃温度条件下进行。
13.根据权利要求1所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,为了进行上述热处理而供给的热源为选自由微波、紫外线、等离子体、激光及加热器组成的组中的一种以上。
14.根据权利要求3所述的金属-石墨烯异种接合金属配线的形成方法,其特征在于,在对形成于上述基板的上部面的层进行去除的步骤中,利用选自由抛光、蒸发法、湿蚀刻及干蚀刻组成的组中的一种进行。
15.一种金属-石墨烯异种接合金属配线,其特征在于,包括:
金属催化剂层;以及
石墨烯,位于与上述金属催化剂层的除了一面的全部面或上述金属催化剂层的全部面相接的位置。
16.一种含有金属-石墨烯异种接合金属配线的半导体器件,其特征在于,
包括:
基板,形成有配线沟道;
金属催化剂层,填满于上述基板的上述沟道;以及
石墨烯,位于与上述金属催化剂层的除了一面的全部面或上述金属催化剂层的全部面相接的位置,
不具有上述石墨烯的金属催化剂层的一面为金属催化剂层不位于配线沟道侧且为被露出的面。
17.根据权利要求16所述的含有金属-石墨烯异种接合金属配线的半导体器件,其特征在于,形成有上述金属-石墨烯异种接合金属配线的基板由多层层叠而成。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0072067 | 2016-06-10 | ||
KR1020160072067A KR101795783B1 (ko) | 2016-06-10 | 2016-06-10 | 금속-그래핀 이종 접합 금속 배선, 이의 형성방법 및 이를 포함하는 반도체 소자 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107492507A true CN107492507A (zh) | 2017-12-19 |
Family
ID=60574112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710432718.1A Pending CN107492507A (zh) | 2016-06-10 | 2017-06-09 | 金属配线、其的形成方法及包含其的半导体器件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10134630B2 (zh) |
KR (1) | KR101795783B1 (zh) |
CN (1) | CN107492507A (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102024458B1 (ko) * | 2017-11-21 | 2019-09-23 | 한국과학기술원 | 레이저 기반 화학기상증착 공정으로 합성된 탄소나노물질을 이용한 회로 수리 방법 |
US10978342B2 (en) | 2019-01-30 | 2021-04-13 | International Business Machines Corporation | Interconnect with self-forming wrap-all-around barrier layer |
CN112439418B (zh) * | 2019-08-15 | 2021-09-24 | 中国科学院化学研究所 | 一种金属纳米颗粒内嵌类石墨烯及其制备方法与应用 |
KR20220019175A (ko) | 2020-08-07 | 2022-02-16 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조 방법 |
US11682623B2 (en) * | 2021-07-14 | 2023-06-20 | Micron Technology, Inc. | Integrated assemblies having graphene-containing-structures |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120080662A1 (en) * | 2010-10-05 | 2012-04-05 | Kabushiki Kaisha Toshiba | Graphene interconnection and method of manufacturing the same |
US20130056873A1 (en) * | 2011-09-02 | 2013-03-07 | Kabushiki Kaisha Toshiba | Semiconductor device |
CN103922321A (zh) * | 2014-03-21 | 2014-07-16 | 京东方科技集团股份有限公司 | 石墨烯的制备方法、薄膜晶体管、阵列基板及显示面板 |
US20140205763A1 (en) * | 2013-01-22 | 2014-07-24 | Nutech Ventures | Growth of graphene films and graphene patterns |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9643847B2 (en) | 2013-03-15 | 2017-05-09 | Honda Motor Co., Ltd. | Method for growth of vertically aligned carbon nanotubes on diamond substrates |
US10319847B2 (en) * | 2016-07-28 | 2019-06-11 | International Business Machines Corporation | Semiconductor device with a steep sub-threshold slope |
-
2016
- 2016-06-10 KR KR1020160072067A patent/KR101795783B1/ko active IP Right Grant
-
2017
- 2017-06-08 US US15/617,119 patent/US10134630B2/en not_active Expired - Fee Related
- 2017-06-09 CN CN201710432718.1A patent/CN107492507A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120080662A1 (en) * | 2010-10-05 | 2012-04-05 | Kabushiki Kaisha Toshiba | Graphene interconnection and method of manufacturing the same |
US20130056873A1 (en) * | 2011-09-02 | 2013-03-07 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20140205763A1 (en) * | 2013-01-22 | 2014-07-24 | Nutech Ventures | Growth of graphene films and graphene patterns |
CN103922321A (zh) * | 2014-03-21 | 2014-07-16 | 京东方科技集团股份有限公司 | 石墨烯的制备方法、薄膜晶体管、阵列基板及显示面板 |
Also Published As
Publication number | Publication date |
---|---|
US20170358486A1 (en) | 2017-12-14 |
KR101795783B1 (ko) | 2017-12-01 |
US10134630B2 (en) | 2018-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107492507A (zh) | 金属配线、其的形成方法及包含其的半导体器件 | |
Huang et al. | Growth of single-layer and multilayer graphene on Cu/Ni alloy substrates | |
Hantanasirisakul et al. | Electronic and optical properties of 2D transition metal carbides and nitrides (MXenes) | |
Munoz et al. | Review of CVD synthesis of graphene | |
Zou et al. | Carbide-forming groups IVB-VIB metals: a new territory in the periodic table for CVD growth of graphene | |
Kim et al. | Low-temperature graphene growth by forced convection of plasma-excited radicals | |
JP5705315B2 (ja) | グラフェンの低温製造方法、及びこれを利用したグラフェンの直接転写方法 | |
Qu et al. | Expediting hydrogen evolution through topological surface states on Bi2Te3 | |
Son et al. | Low-temperature synthesis of graphene by chemical vapor deposition and its applications | |
EP2327662B1 (en) | Graphene sheet, graphene base including the same, and method of preparing the graphene sheet | |
Yeh et al. | Single-step growth of graphene and graphene-based nanostructures by plasma-enhanced chemical vapor deposition | |
US20170121177A1 (en) | Method for Graphene and Carbon Nanotube Growth | |
KR101273695B1 (ko) | 그래핀 패턴의 형성방법 및 그래핀 패턴을 갖는 전자소자의 제조방법 | |
US20160369394A1 (en) | Method for synthesizing multilayer graphene | |
Schwartzberg et al. | Complex materials by atomic layer deposition | |
Huet et al. | Pressure-controlled chemical vapor deposition of single-layer graphene with millimeter-size domains on thin copper film | |
CN103459315A (zh) | 制造石墨烯膜的方法、用于制造石墨烯膜的设备和通过使用用于制造石墨烯膜的设备制成的石墨烯膜 | |
KR101600782B1 (ko) | 다층 그래핀의 제조방법 | |
KR101294362B1 (ko) | 육방정계 질화붕소층을 포함하는 그래핀 복합필름 제조방법 | |
Park et al. | Thickness-controlled multilayer hexagonal boron nitride film prepared by plasma-enhanced chemical vapor deposition | |
Qi et al. | Chemical vapor deposition growth of bernal-stacked bilayer graphene by edge-selective etching with H2O | |
CN102881651B (zh) | 一种改善碳纳米管互连电特性的方法 | |
US20180216230A1 (en) | Method for pecvd deposition of a graphene-based layer on a substrate | |
KR20150094284A (ko) | 패턴화된 그래핀의 직접 성장 방법 및 그를 이용하여 제조된 그래핀 | |
Yokoyama et al. | Low-temperature synthesis of multiwalled carbon nanotubes by graphite antenna CVD in a hydrogen-free atmosphere |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171219 |