CN107453713B - Power amplifier for improving gate-source parasitic effect - Google Patents
Power amplifier for improving gate-source parasitic effect Download PDFInfo
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- CN107453713B CN107453713B CN201710563660.4A CN201710563660A CN107453713B CN 107453713 B CN107453713 B CN 107453713B CN 201710563660 A CN201710563660 A CN 201710563660A CN 107453713 B CN107453713 B CN 107453713B
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- gate
- power amplifier
- microstrip line
- source
- circuit
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- 230000003071 parasitic effect Effects 0.000 title claims abstract description 96
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000011160 research Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/15—Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710563660.4A CN107453713B (en) | 2017-07-12 | 2017-07-12 | Power amplifier for improving gate-source parasitic effect |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710563660.4A CN107453713B (en) | 2017-07-12 | 2017-07-12 | Power amplifier for improving gate-source parasitic effect |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107453713A CN107453713A (en) | 2017-12-08 |
CN107453713B true CN107453713B (en) | 2021-01-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710563660.4A Active CN107453713B (en) | 2017-07-12 | 2017-07-12 | Power amplifier for improving gate-source parasitic effect |
Country Status (1)
Country | Link |
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CN (1) | CN107453713B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2262107A1 (en) * | 2009-06-10 | 2010-12-15 | Alcatel Lucent | Inverse class F amplifier and method |
CN105897194A (en) * | 2016-05-11 | 2016-08-24 | 杭州电子科技大学 | Continuous class EF efficient wideband power amplifier and implementation method thereof |
CN106656076A (en) * | 2016-12-31 | 2017-05-10 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency power amplifier supporting multi-mode and multi-frequency, chip and communication terminal |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7092691B2 (en) * | 2001-03-09 | 2006-08-15 | California Insitute Of Technology | Switchless multi-resonant, multi-band power amplifier |
EP1532731B1 (en) * | 2002-08-19 | 2011-09-21 | Nxp B.V. | High power doherty amplifier |
US7944311B1 (en) * | 2009-12-17 | 2011-05-17 | Samsung Electro-Mechanics Company, Ltd. | Feedback biasing for cascode amplifiers |
CN102291092B (en) * | 2011-06-14 | 2014-04-30 | 中国科学技术大学 | Inverse class-F power amplifier |
EP2933918B1 (en) * | 2014-04-15 | 2017-11-22 | Ampleon Netherlands B.V. | Ultra wideband doherty amplifier |
CN104300925B (en) * | 2014-10-24 | 2017-06-23 | 天津大学 | A kind of high efficiency F classes/inverse F power-like amplifiers |
CN104953960A (en) * | 2015-06-17 | 2015-09-30 | 深圳市华讯方舟微电子科技有限公司 | J type power amplification circuit based on parasitic compensation and radio frequency power amplifier |
CN204794917U (en) * | 2015-06-17 | 2015-11-18 | 深圳市华讯方舟科技有限公司 | Five rank F class power amplification circuit and switching power amplifiers |
US10171039B2 (en) * | 2015-08-31 | 2019-01-01 | Infineon Technologies Ag | Devices and methods that facilitate power amplifier off state performance |
-
2017
- 2017-07-12 CN CN201710563660.4A patent/CN107453713B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2262107A1 (en) * | 2009-06-10 | 2010-12-15 | Alcatel Lucent | Inverse class F amplifier and method |
CN105897194A (en) * | 2016-05-11 | 2016-08-24 | 杭州电子科技大学 | Continuous class EF efficient wideband power amplifier and implementation method thereof |
CN106656076A (en) * | 2016-12-31 | 2017-05-10 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency power amplifier supporting multi-mode and multi-frequency, chip and communication terminal |
Non-Patent Citations (3)
Title |
---|
Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT;S. Gao 等;《2006 European Microwave Conference》;20070115;1-5 * |
应用于无线通信的宽带Doherty功率放大器;程知群 等;《微波学报》;20170505;第33卷(第02期);68-71 * |
高效率E类功放在遥测发射机中的应用;曹韬 等;《微波学报》;20121015;第28卷(第5期);56-60 * |
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Publication number | Publication date |
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CN107453713A (en) | 2017-12-08 |
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Application publication date: 20171208 Assignee: Hangzhou HENGCHUANG Microelectronics Co.,Ltd. Assignor: HANGZHOU DIANZI University Contract record no.: X2022330000046 Denomination of invention: A power amplifier for improving gate source parasitic effect Granted publication date: 20210126 License type: Common License Record date: 20220221 |
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EE01 | Entry into force of recordation of patent licensing contract | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220316 Address after: 215217 No. 16, shebang Road, Wujiang Economic and Technological Development Zone, Suzhou, Jiangsu Patentee after: Suzhou Tongxin Liheng Electronic Technology Co.,Ltd. Address before: 310018 Xiasha Higher Education Zone, Hangzhou, Zhejiang Patentee before: HANGZHOU DIANZI University |
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TR01 | Transfer of patent right |